Ceramic base and manufacturing method thereof

Abstract

The present invention relates to a ceramic susceptor and a method for manufacturing the same, the ceramic susceptor of the present invention comprising: a base material having a gas flow path for supplying a cooling gas; an insulating plate fixed on the base material and having pores; and a gas hole structure that connects the gas flow path and the gas hole between the base substrate and the insulating plate, the gas hole structure including a support fixed to the recess of the base substrate and having a communication hole communicating with the gas flow path, a porous filter, and a fluid plug, the porous filter is arranged between the communication hole and the air hole on the support body, the fluid plug is arranged on the outer side surface of the support body, and an adhesive for bonding the base substrate and the insulating plate is limited by the fluid plug in a space between the base substrate and the support body.

Description

Technical Field

[0001] The invention relates to a ceramic base, in particular to a ceramic base for protecting cooling pores and a manufacturing method thereof. Background Art

[0002] Typically, a semiconductor device or display device is manufactured by stacking multiple thin film layers including a dielectric layer and a metal layer on a glass substrate, a flexible substrate or a semiconductor wafer substrate and then patterning them. These thin film layers are sequentially deposited on the substrate by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process. As the CVD process, it includes a low pressure chemical vapor deposition (LPCVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, an organic metal chemical vapor deposition (MOCVD) process, and the like.

[0003] A ceramic susceptor is provided in these CVD apparatuses and PVD apparatuses, and the ceramic susceptor is used to support a glass substrate, a flexible substrate, a semiconductor wafer substrate, etc. and to process a semiconductor process. The ceramic susceptor may be provided in the CVD apparatus and the PVD apparatus, and may be provided with a chuck electrode for supporting a substrate and a heating wire for heating a substrate in a heat treatment process, etc. In addition, the ceramic susceptor may be provided with a high frequency (RF) electrode instead of a heating wire, or may be further provided with a high frequency (RF) electrode, so that it can also be used to form plasma in an etching process, etc., of a plurality of thin film layers formed on a substrate.

[0004] In this ceramic base, the base substrate and the insulating plate bonded thereto have a prescribed cooling structure so that the substrate on the insulating plate is uniformly cooled by external cooling gas. Generally, a cooling structure is provided so that the cooling gas flow path provided in the base substrate is communicated (unblocked) with the pores provided in the insulating plate. Various attempts are being made to prevent the adhesive from penetrating into the pores in the process of bonding the base substrate and the insulating plate using a liquid adhesive.

[0005] As an example, the pore structure of the conventional ceramic base is a straight tube structure, which is a structure for directly supplying process gas (e.g., He (helium)). In order to improve the distribution of process gas supply and prevent arcing on the surface side, Figure 5As shown, it has a structure in which a porous ceramic structure 4 is inserted between the gas flow path of the base substrate 20 and the pores 3 of the insulating plate 13. However, the pores may be clogged due to the adhesive 12 used to bond the base substrate 20 and the insulating plate 13, and in order to prevent this phenomenon, there is a problem that it is not easy to adjust the volume of the adhesive 12. In addition, in this structure, contamination around the pores may cause poor gas supply, particle generation, or arcing. In particular, this problem is very serious in high-power ceramic bases used in high aspect ratio contact (HARC) processes. Summary of the invention

[0006] Problem that the invention aims to solve

[0007] Therefore, the present invention is proposed to solve the above-mentioned problems. The purpose of the present invention is to provide a ceramic base and a manufacturing method thereof, which applies a fluid stopper structure in the bonding structure of the base substrate and the insulating plate, thereby making it easy to adjust the volume of the adhesive in the bonding process, thereby preventing the pore clogging phenomenon in the high-power ceramic base used in the HARC (High Aspect Ratio Contact) process, and minimizing the generation of arcs by reducing contamination around the pores.

[0008] Means used to solve problems

[0009] First, summarizing the features of the present invention, a ceramic base according to one aspect of the present invention for achieving the above-mentioned purpose includes: a base substrate having a gas flow path for supplying cooling gas; an insulating plate fixed on the base substrate and having pores; and a pore structure, which is a pore structure for connecting the gas flow path and the pores between the base substrate and the insulating plate, and includes: a support body fixed to a groove of the base substrate and having a connecting hole connected to the gas flow path; a porous filter arranged on the support body between the connecting hole and the pore; and a fluid plug arranged on the outer side surface of the support body, for allowing the adhesive bonding between the base substrate and the insulating plate to be limited by the fluid plug in the space between the base substrate and the support body.

[0010] The fluid plug may include a ring-shaped sealing member disposed in a groove formed along an edge of the support body.

[0011] The cross-sectional shape of the ring-shaped sealing member may include any one of a quadrilateral, a circle, an ellipse, or a trapezoid.

[0012] The fluid plug may include a protrusion formed along an edge of the support body.

[0013] The fluid plug may include a protrusion formed on the base substrate in such a manner as to contact the support body along an edge of the support body.

[0014] In the groove of the base substrate, a distance between the base substrate and the support may be 0.1 mm to 0.8 mm.

[0015] The fluid plug may be disposed at a position between 20% and 80% of the total height of the support body, and preferably, may be disposed at a position between 50% and 80%.

[0016] The dielectric strength of the adhesive may be above 20 kV / mm and the volume resistivity may be 10 12 Ω·cm or more.

[0017] In addition, according to another aspect of the present invention, a method for manufacturing a ceramic base includes: a step of configuring a support body in a groove of a base substrate, the base substrate having a gas flow path for supplying cooling gas, and the support body having a connecting hole connected to the gas flow path; a step of configuring a porous filter on the support body in contact with the connecting hole; a step of forming an adhesive layer on the support body using an adhesive; a step of pasting a ceramic sheet on the base substrate; and a step of forming an electrode layer on the ceramic sheet, the ceramic base includes a fluid plug configured on the outer side surface of the support body, and in the process of forming the adhesive layer and pasting the ceramic sheet, the fluid plug formed on the outer side surface of the support body is used to limit the adhesive in the space between the base substrate and the support body.

[0018] In the step of pasting the ceramic sheet onto the base substrate, pores may be pre-processed at the position of the ceramic sheet corresponding to the porous filter, or the step of processing pores may be included after the step of forming the electrode layer on the ceramic sheet, wherein the pores penetrate from the outside of the position of the ceramic sheet corresponding to the porous filter to the position of the porous filter.

[0019] Furthermore, according to another aspect of the present invention, a method for manufacturing a ceramic base includes: a step of configuring a porous filter in a groove of an insulating plate including an electrode layer in contact with the pores; a step of configuring a support body having a connecting hole connected to the porous filter, and the support body is configured so that the connecting hole is located at the position of the porous filter; a step of forming an adhesive layer on the support body using an adhesive; and a step of configuring the base substrate so that a groove of the base substrate having a gas flow path for supplying cooling gas is placed on the support body having the connecting hole connected to the gas flow path, and in the process of forming the adhesive layer and configuring the base substrate, a fluid plug configured on the outer side of the support body is used to limit the adhesive in the space between the base substrate and the support body.

[0020] Preferably, in the groove of the base substrate, the spacing between the base substrate and the support body is 0.1 mm to 0.8 mm.

[0021] The adhesive may be filled through the fluid plug to a position of 20% to 80% of the total height of the support body, and preferably, may be filled to a position of 50% to 80%.

[0022] Effects of the Invention

[0023] According to the ceramic base and the manufacturing method thereof of the present invention, a ceramic base can be provided, which can easily adjust the volume of the adhesive in the bonding process by applying a fluid stopper structure in the bonding structure of the base substrate and the insulating plate, thereby preventing the pore clogging phenomenon in the high-power ceramic base used in the HARC (High Aspect Ratio Contact) process, and can minimize the generation of arcs by reducing contamination around the pores.

[0024] In addition, according to the ceramic base and the manufacturing method thereof of the present invention, a ceramic base can be provided, which can easily adjust the height of the adhesive to an appropriate height, such as 20% to 80% of the height of the support body, and can minimize the generation of arcs by applying a structure that can effectively prevent the occurrence of pore clogging and contamination. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] To help understanding of the present invention, the accompanying drawings, which are included as a part of the detailed description, provide embodiments of the present invention and explain the technical concept of the present invention together with the detailed description.

[0026] Figure 1 FIG. 1 is a schematic cross-sectional view of a ceramic base according to an embodiment of the present invention.

[0027] Figure 2AAccording to the first embodiment Figure 1 Cross-sectional view of the AA portion.

[0028] Figure 2B According to the second embodiment Figure 1 Cross-sectional view of the AA portion.

[0029] Figure 2C According to the third embodiment Figure 1 Cross-sectional view of the AA portion.

[0030] FIG. 3A to FIG. 3C 1 is a cross-sectional view of a pore portion for explaining each process of a manufacturing process of a ceramic susceptor according to an embodiment of the present invention.

[0031] FIG. 4A to FIG. 4C 1 is a cross-sectional view of a pore portion for explaining each process of a manufacturing process of a ceramic susceptor according to another embodiment of the present invention.

[0032] Figure 5 This is a diagram for explaining the pore structure of a conventional ceramic base.

[0033] Description of Reference Numerals

[0034] 90: Porous structure

[0035] 100: Ceramic base

[0036] 200: Base material

[0037] 300: Insulation board

[0038] 310: Insulation layer

[0039] 320: Electrode layer

[0040] 330: Dielectric layer

[0041] 316, 416, 516: Fluid plug DETAILED DESCRIPTION

[0042] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. At this time, the same components in each drawing are represented by the same figure marks as much as possible. In addition, the description of known functions and / or structures will be omitted. The content disclosed below will mainly describe the parts required for understanding the operation of various embodiments, and omit the description of elements that may obscure the main purpose of the description. In addition, some of the components in the drawings may be enlarged, omitted or schematically shown. The size of each component cannot fully reflect the actual size, and therefore, the content recorded here is not limited by the relative size or spacing of the components shown in each drawing.

[0043] When describing the embodiments of the present invention, if it is judged that the specific description of the known technology related to the present invention unnecessarily obscures the main idea of ​​the present invention, its detailed description will be omitted. In addition, the terms described below are terms defined in consideration of the functions of the present invention, and may vary according to the intentions or precedents of the user or operator. Therefore, their definition should be based on the content of the entire specification. The terms used in this specification are used only to illustrate the embodiments of the present invention and are not intended to be limiting. Unless otherwise specified, singular expressions shall include plural expressions. Expressions such as "including" or "having" in this specification are used to refer to any feature, number, step, action, component or combination thereof, and should not be understood as excluding the existence or additional possibility of one or more other features, numbers, steps, actions, components or combinations thereof.

[0044] In addition, although the terms "first" and "second" may be used to describe various components, the components are not limited to the terms, and the terms are only used to distinguish one component from another.

[0045] Figure 1 FIG. 1 is a schematic cross-sectional view of a ceramic base 100 according to an embodiment of the present invention.

[0046] Reference Figure 1 According to an embodiment of the present invention, a ceramic base 100 includes a base substrate 200 and an insulating plate 300. The ceramic base 100 is preferably a circular type, but in some cases, it can also be designed into other shapes such as an ellipse, a quadrilateral, etc.

[0047] The base substrate 200 may be formed as a multi-layer structure consisting of a plurality of metal layers. These plurality of metal layers may be bonded by a brazing process, a welding process, or a bonding process. The insulating plate 300 may be fixed to the base substrate 200, and it may be fixed to the base substrate 200 by a prescribed fixing device or an adhesion / bonding device. The base substrate 200 and the insulating plate 300 may also be made and bonded separately, and depending on the circumstances, the structure of the insulating plate 300 may also be directly formed on the upper surface of the base substrate 200 by using a ceramic sheet or the like.

[0048] like Figure 1 As shown, the insulating plate 300 may include an insulating layer 310 , an electrode layer 320 located on the insulating layer 310 , and a dielectric layer 330 located on the electrode layer 320 .

[0049] The insulating layer 310 may be made of a ceramic material. As an embodiment, the insulating layer 310 may be formed of a material selected from materials such as aluminum oxide (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si3N4), silicon oxide (SiO2), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO2), zirconium oxide (ZrO2), Y2O3, YAG, YAM, YAP, etc. The insulating layer 310 may be formed on the upper surface of the base substrate 200 by performing a thermal spraying process, a ceramic sheet pasting process, etc. using the ceramic material as described above. The insulating layer 310 formed in this way performs a function for insulating the base substrate 200 from the electrode layer 320.

[0050] The electrode layer 320 may be made of a conductive metal material. As an example, the electrode layer 320 may be formed of at least one of silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo) and titanium (Ti), and more preferably, may be formed of tungsten (W). The electrode layer 320 may be formed using a thermal spraying process or a screen printing process. The electrode layer 320 has a thickness of about 1.0 μm to 100 μm. For example, preferably, when the electrode layer 320 is formed using a screen printing process, a thickness of 1.0 μm to 30 μm may be applied, and when the electrode layer 320 is formed using a thermal spraying process, a thickness of 30 μm to 100 μm may be applied. However, since it is difficult to form a too thin layer such as the electrode layer 320 having a thickness less than 1.0 μm, it is not preferred. In addition, at this time, the resistance value increases due to the porosity and other defects in the electrode layer, and as the resistance value increases, the phenomenon of reduced electrostatic adsorption may occur, so it is not preferred. In addition, if the thickness of the electrode layer 320 is too thick, such as exceeding 100 μm, arcing may occur, so it is not preferred. Therefore, preferably, the thickness of the electrode layer 320 has an appropriate value in the range of about 1.0 μm to 100 μm. The electrode layer 320 formed in this way receives a bias voltage when loading a substrate (not shown) placed on the upper part of the dielectric layer 330, thereby generating an electrostatic force, thereby performing chucking. When the substrate (not shown) is unloaded, discharge is achieved by applying a reverse bias voltage to the electrode layer 320, thereby achieving de-chucking.

[0051] The electrode layer 320 includes an electrode pattern for such chucking and de-chucking, but is not limited thereto, and may include an electrode pattern for a heater or a high-frequency electrode pattern for generating plasma, depending on the circumstances. That is, the ceramic base 100 of the present invention is a semiconductor device for processing substrates to be processed for various purposes (e.g., semiconductor wafers, glass substrates, flexible substrates, etc.), and an electrostatic chuck electrode may be provided on the electrode layer 320 used as an electrostatic chuck to support the substrate to be processed, and a heating wire (or heating body) may be provided to heat the substrate to be processed to a specified temperature, or a high-frequency electrode may be provided or a high-frequency electrode may be provided to replace the heating wire, so as to perform a process such as plasma enhanced chemical vapor deposition on the substrate to be processed.

[0052] The dielectric layer 330 may be made of a ceramic material. As an embodiment, the dielectric layer 330 may be formed of a material selected from materials such as aluminum oxide (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si3N4), silicon oxide (SiO2), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO2), zirconium oxide (ZrO2), Y2O3, YAG, YAM, YAP, etc., which are the same materials as the above-mentioned insulating layer 310.

[0053] The dielectric layer 330 may be formed on the upper surfaces of the insulating layer 310 and the electrode layer 320 by performing a thermal spraying process, a ceramic sheet pasting process, etc. using the ceramic material as described above. The dielectric layer 330 formed in this manner may perform the function of a dielectric so as to form an electrostatic force through the electrode layer 320, and may also perform the function of a protective film against the external environment.

[0054] When the ceramic susceptor 100 is installed in a chamber for performing a semiconductor process, in order to uniformly cool a substrate (e.g., a glass substrate, a flexible substrate, a semiconductor wafer substrate, etc.) on the insulating plate 300 using external cooling gas, the base substrate 200 and the insulating plate 300 may be provided with a plurality of cooling elements. Figure 2A , Figure 2B , Figure 2C The specified cooling structure.

[0055] Figure 2A According to the first embodiment Figure 1 Cross-sectional view of the AA portion.

[0056] Figure 2B According to the second embodiment Figure 1 Cross-sectional view of the AA portion.

[0057] Figure 2C According to the third embodiment Figure 1 Cross-sectional view of the AA portion.

[0058] Reference Figure 2A , Figure 2B , Figure 2C , for example, Figure 1 As shown, a cooling gas flow path 15 formed in an appropriate pattern may be provided inside the base substrate 200 to supply cooling gas, and the cooling gas flow path 15 is fluidly connected with the plurality of cooling air holes 30 of the insulating plate 300 through the communicating holes 51 of the pore structure 90 of the present invention and the porous filter 40, thereby the cooling gas may be ejected from the plurality of cooling air holes 30, thereby enabling the substrate on the insulating plate 300 to be uniformly cooled. At this time, helium (He) may be mainly used as the cooling gas, but it is not necessarily limited thereto. The plurality of cooling air holes 30 of the insulating plate 300 may be set to an appropriate number according to the design.

[0059] exist Figure 1 In the embodiment, bias is applied to the electrode layer 320 from the prescribed electrode rod 281 of the hole 280 provided at the lower part of the ceramic base 100, so that, for example, chucking and de-chucking can be achieved. According to the design, an appropriate number of cooling air holes 30 can be formed between the prescribed electrode patterns constituting the electrode layer 320, and the fluid communication from the cooling gas flow path 15 to the upper surface of the insulating plate 300 can be achieved through the connecting hole 51 of the air hole structure 90 and the porous filter 40.

[0060] The ceramic susceptor 100 having the cooling holes 30 according to an embodiment of the present invention includes a pore structure 90 installed between the base substrate 200 and the insulating layer 310 of the insulating plate 300 and communicating the cooling gas flow path 15 with the cooling holes 30 .

[0061] The pore structure 90 includes a support 50 fixed to the groove 290 of the base substrate 200, a porous filter 40 and a fluid plug ( Figure 2A 316 of Figure 2B 416 of Figure 2C516 in). The support body 50 includes a connecting hole 51 connected to the cooling gas flow path 15 of the base substrate 200. A placement groove 52 connected to the connecting hole 51 and having a diameter larger than the connecting hole 51 is provided on the upper side of the support body 50. The porous filter 40 can be formed into an appropriate shape such as a cylinder, and is provided on the support body 50, that is, it is provided in the placement groove 52 part of the support body 50, so as to be built between the connecting hole 51 of the pore structure 90 and the cooling air hole 30 of the insulating plate 300. At this time, the porous filter 40 is made / formed to extend longer than the end of the placement groove 52 of the support body 50, that is, it extends longer than the upper surface 55 of the support body 50, that is, it protrudes toward the insulating plate 300 side. In some cases, the porous filter 40 can also be made / formed at the end of the placement groove 52 part of the support body 50 or at a height lower than the end of the placement groove 52 part of the support body 50.

[0062] As for the overall appearance of the support body 50, preferably, the diameter of the portion corresponding to the mounting groove 52 is larger than the diameter of the portion corresponding to the connecting hole 51, thereby preventing the shortest distance from the porous filter 40 to the outside of the support body 50 from becoming smaller, and in the case where there is no portion of the support body 50 where the thickness is thinned, the overall thickness of the support body 50 is maintained above the specified thickness, thereby becoming a structure with strong arc resistance.

[0063] In addition, the support body 50 may include a fluid plug 316, 416, 516 disposed on the outer side thereof. The fluid plug 316, 416, 516 is configured to prevent the adhesive 312 for bonding between the base substrate 200 and the insulating plate 300 from extending further in the space between the base substrate 200 and the support body 50, and to restrict the adhesive 312 to its position. The height h of the adhesive 312 filling the space between the base substrate 200 and the support body 50 by the fluid plug 316, 416, 516 may be 20% to 80% of the total height H of the support body 50 from the upper surface 55 of the support body 50, preferably 50% to 80% (see FIG. 1 ). Figure 3B ).

[0064] For example, Figure 2A As shown, a portion of the fluid plug 316 is accommodated in a groove 315 formed along the edge of the support body 50 (e.g., a circular outer peripheral surface, a polygonal outer side surface, etc.), and includes a ring-shaped sealing member 316 configured in the space between the groove 315 and the base substrate 200, so as to limit the adhesive 312. Preferably, the transverse and longitudinal lengths of the cross-section of the groove 315 are smaller than the width of the space between the groove 315 and the base substrate 200, and, preferably, the diameter and thickness of the ring-shaped sealing member 316 are larger than the width of the space between the groove 315 and the base substrate 200. Figure 2A In the figure, the cross-sectional shape of the ring-shaped sealing member 316 is shown as a quadrangle, but is not limited thereto, and the cross-sectional shape of the ring-shaped sealing member 316 may be formed in various shapes such as a circle, an ellipse, or a trapezoid.

[0065] In addition, for example, Figure 2B As shown, the fluid plug 416 may be a protrusion 416 protruding along the edge (e.g., a circular outer peripheral surface, a polygonal outer side surface, etc.) of the support body 50, and the protrusion 416 is located in the space between the base substrate 200 and the support body 50, so as to limit the adhesive 312. Preferably, the transverse length of the cross section of the protrusion 416 may be 0.5 to 2 times the width of the space between the base substrate 200 and the support body 50, and the longitudinal length of the cross section of the protrusion 416 may be 1 to 5 times the width of the space between the base substrate 200 and the support body 50.

[0066] In addition, for example, Figure 2C As shown, the fluid plug 516 may be a protrusion 516 formed on the base substrate 200 in a manner of contacting the edge (eg, a circular outer peripheral surface, a polygonal outer side surface, etc.) of the support body 50. Figure 2B Similarly, the protrusion 516 may be located in the space between the base substrate 200 and the support 50, so that the adhesive 312 may be restricted. Preferably, the lateral length of the cross section of the protrusion 516 may be 0.5 to 2 times the width of the space between the base substrate 200 and the support 50, and the longitudinal length of the cross section of the protrusion 516 may be 1 to 5 times the width of the space between the base substrate 200 and the support 50.

[0067] The support 50 and the porous filter 40 may be made of a ceramic material, and the porous filter 40 may have a plurality of porous gaps to allow gas to pass through but not allow pollution sources such as particles to pass through. Such a ceramic material may be, for example, a combination of one or more of aluminum oxide (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si3N4), silicon oxide (SiO2), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO2) and zirconium oxide (ZrO2).

[0068] The ring-shaped sealing member 316 may be made of various materials, but is preferably made of a silicone material, and is therefore cured together with the adhesive 312 during the curing process, so that the ring-shaped sealing member 316 remains as a silicone cured product.

[0069] A cooling gas flow path 15 formed in an appropriate pattern is provided inside the base substrate 200 to supply cooling gas, and the cooling gas flow path 15 is fluidically connected with a plurality of cooling air holes 30 of the insulating plate 300 through the pore structure 90 of the present invention, thereby allowing cooling gas to be ejected from the plurality of cooling air holes 30, thereby enabling the substrate on the insulating plate 300 to be evenly cooled.

[0070] A ceramic sheet 313 as an insulating layer 310 is formed on the upper surface 250 of the base substrate 200 via an adhesive 312. In addition, an adhesive 312 may be further formed on the upper surface 55 of the support 50, if necessary. An electrode layer 320 and a dielectric layer 330 are sequentially formed on the insulating layer 310 of the insulating plate 300.

[0071] In addition, a coating layer (not shown) composed of a ceramic material may be further formed on the upper surface 250 of the base substrate 200. In addition, if necessary, a coating layer (not shown) may be further formed on the upper surface 55 of the support 50. Before forming the adhesive 312, the coating layer (not shown) may be formed at the height of the upper surface 45 of the porous filter 40 or the height of the upper surface 55 of the support 50, or at a height lower than the height.

[0072] As described above, the base substrate 200 and the insulating plate 300 may be fixed by the adhesive 312. In particular, the adhesive 312 is filled in a portion of the space between the base substrate 200 and the pore structure 90 in the groove 290 of the base substrate 200. The adhesive 312 preferably has a dielectric strength of 20 kV / mm or more and a volume resistivity of 10 12 The adhesive 312 may be in the form of a silicone paste, and may be solidified by pressing the base substrate 200 and the insulating plate 300 together, thereby firmly bonding the base substrate 200 and the insulating plate 300 .

[0073] In particular, in the groove 290 of the base substrate 200, the spacing between the base substrate 200 and the pore structure 90 is preferably 0.1 mm to 0.8 mm. In the space formed by the spacing between the base substrate 200 and the pore structure 90 in the groove 290 of the base substrate 200, the height h filled with the adhesive 312 is 0.1 mm to 0.8 mm relative to the total height H of the support body 50 (in Figure 3B In the embodiment of the present invention, from top to bottom) can be 20% to 80%, preferably, can be 50% to 80% (groove 315).

[0074] According to the ceramic base 100 of one embodiment of the present invention as described above, by applying the pore structure 90 without a ring-shaped sealing component, a constant wall thickness can be maintained without thinning, thereby minimizing the generation of arcs in a high-power ceramic base suitable for HARC (High Aspect Ratio Contact) process, etc.

[0075] In addition, the ceramic base 100 according to an embodiment of the present invention can easily adjust the height of the adhesive to 20% to 80% of the total height of the support body 50, thereby increasing the coating thickness of a silicone adhesive or the like used to combine the base substrate 200 and the insulating plate 300 to a thickness of 0.2 mm to 0.4 mm or more, so that the adhesive can be coated in a wider vertical range than the conventional structure, and at this time, a structure that can effectively prevent clogging and contamination of the pores is applied, thereby minimizing the generation of arcs.

[0076] FIG. 3A to FIG. 3C 1 is a cross-sectional view of a pore portion in each process of the manufacturing process of the ceramic base 100 according to an embodiment of the present invention. Figure 2A ) describes the manufacturing process of the ceramic base 100, but can also be similarly applied to the second embodiment ( Figure 2B ) and the third embodiment ( Figure 2C ).

[0077] Reference Figure 3A In one embodiment of the present invention, in order to manufacture a ceramic base 100 having cooling holes 30, first, a base substrate 200 is prepared, in which one or more grooves 290 communicating with a cooling gas flow path 15 for supplying cooling gas are pre-formed. A support body 50 is arranged / inserted in the groove 290 of the base substrate 200, and the support body 50 has a connecting hole 51 communicating with the cooling gas flow path 15 of the base substrate 200 and is provided with fluid plugs 316, 416, and 516. The connecting hole 51 of the support body 50 extends from one end of the lower part of the support body 50 toward the upper side, and the upper side of the support body 50 has a placement groove 52 communicating with the connecting hole 51 and having a diameter larger than the connecting hole 51. The porous filter 40 is arranged / inserted on the support body 50, that is, arranged / inserted in the placement groove 52 portion of the support body 50.

[0078] At this time, the porous filter 40 is made / formed to extend longer than the end of the seating groove 52 portion of the support body 50, that is, to protrude toward the insulating plate 300. However, not limited thereto, in some cases, the height of the porous filter 40 when the porous filter 40 is inserted into the seating groove 52 portion may be made / formed to be equal to or lower than the height of the end of the seating groove 52 of the support body 50.

[0079] Such a support body 50 and a porous filter 40 may be made of a ceramic material, and the porous filter 40 may have a plurality of porous gaps to allow gas to pass through but not allow pollution sources such as particles to pass through. Such a ceramic material may be, for example, a combination of one or more of aluminum oxide (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si3N4), silicon oxide (SiO2), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO2) and zirconium oxide (ZrO2).

[0080] In addition, refer to Figure 3B After the pore structure 90 including the support 50 and the porous filter 40 is arranged on the base substrate 200 as described above, an adhesive layer is formed using an adhesive 312 such as a silicone paste, and a ceramic sheet 313 to be laminated on the adhesive 312 is prepared. The adhesive 312 may be in the form of a silicone paste, and may press and solidify the base substrate 200 and the insulating plate 300 including the ceramic sheet 313, thereby firmly bonding the base substrate 200 and the insulating plate 300.

[0081] Reference Figure 3C The insulating layer 310 is formed by laminating and pasting a ceramic sheet 313 on an adhesive 312. The ceramic sheet 313 may be made of a ceramic material, for example, a combination of one or more of aluminum oxide (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si3N4), silicon oxide (SiO2), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO2) and zirconium oxide (ZrO2).

[0082] Although not shown in the drawings, Figure 1 As shown, an electrode layer 320 may be formed at an appropriate position on the insulating layer 310 of the insulating plate 300, and a dielectric layer 330 may be formed on the electrode layer 320. The electrode layer 320 includes an electrode pattern for adsorption and desorption as described above, but is not limited thereto, and may also include an electrode pattern for a heater or a high-frequency electrode pattern for generating plasma in addition thereto, depending on the circumstances. The dielectric layer 330 may also be formed of the same ceramic material as the ceramic sheet 313.

[0083] Thereafter, the upper structure including the ceramic sheet 313 , that is, the insulating plate 300 including the insulating layer 310 , the electrode layer 320 , and the dielectric layer 330 may be firmly bonded to the base substrate 200 by crimping and solidification of the base substrate 200 .

[0084] In the above process of forming the adhesive layer by the adhesive 312 and pasting the ceramic sheet 313, the adhesive 312 may be coated / formed on the upper surface 250 of the base substrate 200 (if necessary, the adhesive 312 is also formed on the upper surface 55 of the support body 50), and the base substrate 200 and the insulating plate 300 are fixed by the adhesive 312 through the above crimping. In particular, a part of the space between the base substrate 200 and the pore structure 90 in the groove 290 of the base substrate 200 is filled with the adhesive 312. The adhesive 312 preferably has a dielectric strength of 20 kV / mm or more and a volume resistivity of 10 12 Materials with a resistance of Ω·cm or above are used to prevent arcing.

[0085] In particular, preferably, the spacing between the base substrate 200 and the pore structure 90 in the groove 290 of the base substrate 200 is 0.1 mm to 0.8 mm. In the space formed by the spacing between the base substrate 200 and the pore structure 90 in the groove 290 of the base substrate 200, the height h filled by the adhesive 312 is limited by the fluid plugs 316, 416, 516, so that the height h of the adhesive 312 is 0.1 mm to 0.8 mm relative to the total height H of the support body 50 (in Figure 3B In the embodiment of the present invention, from top to bottom) can be 20% to 80%, preferably, can be 50% to 80% (groove 315).

[0086] For example, Figure 2A As shown in FIG. 1 , when a ring-shaped sealing member 316 disposed in a space between a groove 315 formed along an edge (e.g., a circular outer peripheral surface, a polygonal outer side surface, etc.) of the support body 50 and the base substrate 200 is used as a fluid plug 316, the adhesive 312 can be limited to the configuration position of the ring-shaped sealing member 316, that is, limited to a height h from the upper surface 55 of the support body 50. In addition, for example, as Figure 2B As shown in FIG. 1 , when a protrusion 416 protruding along an edge (e.g., a circular outer peripheral surface, a polygonal outer side surface, etc.) of the support body 50 is used as a fluid plug 416, the adhesive 312 can be limited to the configuration position of the protrusion 416, that is, limited to the height h from the upper surface 55 of the support body 50. In addition, for example, as Figure 2C As shown, when the protrusion 516 formed on the base substrate 200 in a manner that contacts the edge of the support body 50 (for example, a circular outer peripheral surface, a polygonal outer surface, etc.) is used as a fluid plug 516, the adhesive 312 can also be restricted to the configuration position of the protrusion 516, that is, to the height h from the upper surface 55 of the support body 50.

[0087] In addition, as above Figure 3CAs shown, when the ceramic sheet 313 is attached to the adhesive 312, the cooling pores 30 may be pre-processed at the position of the ceramic sheet 313 corresponding to the porous filter 40. However, this is not limited to the above. After the step of forming the electrode layer 320, that is, after forming the dielectric layer 330, the cooling pores 30 may be processed from the position corresponding to the porous filter 40 outside the dielectric layer 330 to the position of the porous filter 40. Considering the diameter of the porous filter 40 and other sizes, an appropriate number of more than one cooling pores 30 may be formed at the position corresponding to the porous filter 40.

[0088] Such hole processing can be performed by laser processing or the like, and can be processed into a hole with a diameter of 0.1 mm to 1 mm. The electrode layer 320 is not formed at the vertical lower portion of the cooling air hole 30. In addition, the dielectric layer 330 is formed on the electrode layer 320, however, the dielectric layer 330 is not necessarily formed at the vertical lower portion of the cooling air hole 30 on the insulating plate 300, and the dielectric layer 330 can be formed as needed.

[0089] FIG. 4A to FIG. 4C 1 is a cross-sectional view of the pore portion in each process of the manufacturing process of the ceramic base according to another embodiment of the present invention. Figure 2A ) of the ceramic base 100 to illustrate its manufacturing process, but can also be similarly applied to the second embodiment ( Figure 2B ) and the third embodiment ( Figure 2C ).

[0090] Reference Figure 4A In another embodiment of the present invention, in order to manufacture the ceramic base 100 having the cooling air holes 30, first, the porous filter 40 may be arranged in the groove 315 of the insulating plate 300 including the electrode layer 320 as described above, so that the porous filter 40 contacts the cooling air holes 30 of the pre-processed insulating plate 300. At this time, the porous filter 40 may be made / formed to extend and protrude further than the end of the placement groove 52 of the insulating plate 300.

[0091] Next, if Figure 4B As shown, a support body 50 having a communication hole 51 communicating with the porous filter 40 is arranged, and the support body 50 is arranged in such a manner that the communication hole 51 is arranged at the position of the porous filter 40. At this time, the porous filter 40 can be arranged in the placement groove 52 of the support body 50. Then, an adhesive layer can be formed on the support body 50 using an adhesive 312.

[0092] Next, if Figure 4CAs shown, the base substrate 200 is arranged in such a manner that the groove 290 of the base substrate 200 having the cooling gas flow path 15 for supplying the cooling gas is placed on the support 50 having the communication hole 51 communicating with the cooling gas flow path 15 .

[0093] Here, too, in the process of forming the adhesive layer based on the adhesive 312 and configuring the base substrate 200, the adhesive 312 may be applied / formed on the lower part of the fluid plug 316, 416, 516 of the support 50, and then the base substrate 200 and the insulating plate 300 are bonded and fixed by the adhesive 312 by crimping, and in particular, a part of the space between the base substrate 200 and the pore structure 90 in the groove 290 of the base substrate 200 is filled with the adhesive 312. The adhesive 312 preferably has a dielectric strength of 20 kV / mm or more and a volume resistivity of 10 12 Materials with a resistance of Ω·cm or above are used to prevent arcing.

[0094] In particular, preferably, the spacing between the base substrate 200 and the pore structure 90 in the groove 290 of the base substrate 200 is 0.1 mm to 0.8 mm. In the space formed by the spacing between the base substrate 200 and the pore structure 90 in the groove 290 of the base substrate 200, the height h filled by the adhesive 312 is limited by the fluid plugs 316, 416, 516, so that the height h of the adhesive 312 is 0.1 mm to 0.8 mm relative to the total height H of the support body 50 (in Figure 3B In the embodiment of the present invention, from top to bottom) can be 20% to 80%, preferably, can be 50% to 80% (groove 315).

[0095] For example, Figure 2A As shown in FIG. 1 , when a ring-shaped sealing member 316 disposed in the space between the groove 315 formed by the wire along the edge (e.g., the circular outer peripheral surface, the polygonal outer side surface, etc.) of the support body 50 and the base substrate 200 is used as the fluid plug 316, the adhesive 312 can be limited to the configuration position of the ring-shaped sealing member 316, that is, limited to the height h from the upper surface 55 of the support body 50. In addition, for example, as Figure 2B As shown in FIG. 1 , when a protrusion 416 protruding along an edge (e.g., a circular outer peripheral surface, a polygonal outer side surface, etc.) of the support body 50 is used as a fluid plug 416, the adhesive 312 can be limited to the configuration position of the protrusion 416, that is, limited to the height h from the upper surface 55 of the support body 50. In addition, for example, as Figure 2CAs shown, when the protrusion 516 formed on the base substrate 200 in a manner that protrudes in contact with the edge of the support body 50 (for example, a circular outer peripheral surface, a polygonal outer surface, etc.) is used as a fluid plug 516, the adhesive 312 can also be restricted to the configuration position of the protrusion 516, that is, to the height h from the upper surface 55 of the support body 50.

[0096] As described above, according to the ceramic base 100 of one embodiment of the present invention, the volume of the adhesive in the bonding process can be easily adjusted by applying a fluid plug structure in the bonding structure of the base substrate 200 and the insulating plate 300, thereby preventing the pore clogging phenomenon in the high-power ceramic base used in the HARC (High Aspect Ratio Contact) process, and can minimize the generation of arcs by reducing the contamination around the pores. In addition, a ceramic base can be provided, which can easily adjust the height h of the adhesive to an appropriate height such as 20% to 80% of the total height H of the support body 50, and can minimize the generation of arcs by applying a structure that can effectively prevent the occurrence of pore clogging and contamination.

[0097] As described above, in the present invention, specific matters such as specific constituent elements and limited embodiments and drawings have been described, but this is only provided to help understand the present invention as a whole, and the present invention is not limited to the embodiments, and ordinary technicians in the field to which the present invention belongs can make various modifications and changes within the scope of the essential features of the present invention. Therefore, the spirit of the present invention should not be limited to the described embodiments and determined, and all technical ideas that are equivalent to or equivalent to the claims, except for the claims described later, should be interpreted as included in the scope of the rights of the present invention.

Claims

1. A ceramic base, characterized in that: include: A base substrate having a gas flow path for supplying a cooling gas, an insulating plate fixed to the base substrate and having pores, and a pore structure, wherein the gas flow path and the pores are connected between the base substrate and the insulating plate, the pore structure comprising a support, a porous filter and a fluid plug, the support being fixed to the groove of the base substrate and having a connecting hole connected to the gas flow path, the porous filter being built on the support between the connecting hole and the pores, and the fluid plug being arranged on the outer side of the support; The space between the base substrate and the support body, where an adhesive for bonding between the base substrate and the insulating plate is confined by the fluid plug.

2. The ceramic base according to claim 1, characterized in that: The fluid plug includes a ring-shaped sealing member disposed in a groove formed along an edge of the support body.

3. The ceramic base according to claim 2, characterized in that: The cross-sectional shape of the annular sealing member includes any one of a quadrilateral, a circle, an ellipse or a trapezoid.

4. The ceramic base according to claim 1, characterized in that: The fluid plug includes a protrusion formed along an edge of the support body.

5. The ceramic base according to claim 1, characterized in that: The fluid plug includes a protrusion formed on the base substrate in such a manner as to be in contact with the support body along an edge of the support body.

6. The ceramic base according to claim 1, characterized in that: In the groove of the base substrate, the spacing between the base substrate and the support body is 0.1 mm to 0.8 mm.

7. The ceramic base according to claim 1, characterized in that: The fluid plug is disposed at a position of 50% to 80% of the total height of the support body.

8. The ceramic base according to claim 1, characterized in that: The dielectric strength of the adhesive is above 20 kV / mm and the volume resistivity is 10 12 Ω·cm or more.

9. A method for manufacturing a ceramic base, characterized in that: include: a step of disposing a support body in the groove of a base substrate, the base substrate having a gas flow path for supplying cooling gas, the support body having a communication hole communicating with the gas flow path, a step of disposing a porous filter on the support so as to contact the communicating holes; forming an adhesive layer on the base substrate using an adhesive, a step of attaching a ceramic sheet to the base substrate, and The step of forming an electrode layer on the ceramic sheet; The ceramic base includes a fluid plug formed on the outer side of the support body, During the process of forming the adhesive layer and attaching the ceramic sheet, the space between the base substrate and the support is restricted by the fluid plug disposed on the outer side of the support.

10. The method for manufacturing a ceramic base according to claim 9, characterized in that: In the step of attaching a ceramic sheet to the base substrate, pores are preliminarily processed at positions of the ceramic sheet corresponding to the porous filter.

11. The method for manufacturing a ceramic base according to claim 9, characterized in that: After the step of forming an electrode layer on the ceramic sheet, the method further comprises: A step of processing air holes, wherein the air holes penetrate from the outside of the position of the ceramic sheet corresponding to the porous filter to the position of the porous filter.

12. A method for manufacturing a ceramic base, characterized in that: include: The step of placing a porous filter in the groove of the insulating plate including the electrode layer so as to contact the pores, a step of disposing a support having a communication hole communicating with the porous filter, wherein the support is disposed so that the communication hole is located at a position of the porous filter, a step of forming an adhesive layer on the support using an adhesive, and a step of arranging a base substrate so that a groove of the base substrate having a gas flow path for supplying a cooling gas is disposed on the support having the communication hole communicating with the gas flow path; During the process of forming the adhesive layer and disposing the base substrate, the space between the base substrate and the support body is restricted by the fluid plug disposed on the outer side of the support body.

13. The method for manufacturing a ceramic base according to claim 12, characterized in that: In the groove of the base substrate, the spacing between the base substrate and the support body is 0.1 mm to 0.8 mm.

14. The method for manufacturing a ceramic base according to claim 12, characterized in that: The adhesive is filled through the fluid plug to a position of 50% to 80% of the total height of the support body.

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