Resonator device and method for manufacturing resonator device

Abstract

The invention provides a vibration device and a manufacturing method of the vibration device. Reliability can be improved. A resonator device includes: a base (10) including a semiconductor substrate (11) having a first surface (11a) on which a circuit element is formed and a second surface (11b); an insulating layer (12) disposed on the first surface (11a) side; and a pad electrode (14a) disposed between a third surface (10a) of the insulating layer (12) on the opposite side from the semiconductor substrate (11) and the first surface (11a) and electrically connected to the circuit element, the insulating layer (12) having an opening (16) formed at a position overlapping the pad electrode (14a) in plan view, the opening (16) exposing the surface (14a1) of the pad electrode (14a). A first metal pattern (30A) disposed on at least a portion of the surface (14a1); a vibration element (40) electrically connected to the first metal pattern (30A); and a metal member (18) that is disposed on the first metal pattern (30A) that overlaps the surface (14a1) in plan view, and that electrically connects the first metal pattern (30A) and the resonator element (40).

Description

Technical Field

[0001] The present invention relates to a vibration device and a method for manufacturing the vibration device. Background Art

[0002] Patent document 1 discloses a method for manufacturing a vibration device, the vibration device comprising: a base substrate including a semiconductor substrate on which an integrated circuit is formed; a cover which is bonded to the base substrate and has a recess; and a vibration piece which is accommodated between the base substrate and the cover. In such a vibration device, a laminate including a wiring layer and a pad for electrically connecting the integrated circuit to the vibration piece is arranged on the base substrate. Specifically, a plurality of wirings such as a bonding component, a terminal layer, and a wiring layer are provided between the vibration piece and the pad.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2021-057755

[0004] However, in the conventional structure, since a plurality of wirings are arranged between the vibration element and the pad, there is a problem that the wiring resistance increases, which affects the vibration characteristics. Summary of the invention

[0005] The vibration device has: a base, which includes: a semiconductor substrate, which has a first surface and a second surface, and a circuit element is formed on the first surface; an insulating layer, which is arranged on the side of the first surface; and a pad electrode, which is arranged between the surface of the insulating layer opposite to the semiconductor substrate and the first surface, and is electrically connected to the circuit element, and the insulating layer is formed with an opening portion that exposes the surface of the pad electrode at a position overlapping with the pad electrode when viewed from above; a first metal pattern, which is arranged on at least a portion of the surface; a vibration element, which is electrically connected to the first metal pattern; and a metal component, which is arranged on the first metal pattern overlapping with the surface when viewed from above, and electrically connects the first metal pattern to the vibration element.

[0006] The manufacturing method of a vibration device has the following steps: preparing a base, wherein the base includes: a semiconductor substrate having a first surface and a second surface, and a circuit element is formed on the first surface; an insulating layer, which is arranged on the side of the first surface; and a pad electrode, which is arranged between the surface of the insulating layer opposite to the semiconductor substrate and the first surface, and is electrically connected to the circuit element; forming an opening portion in the insulating layer overlapping with the pad electrode when viewed from above, so that the surface of the pad electrode is exposed; forming a first metal layer on the surface, the side of the opening portion, and one surface of the base; in the first metal layer, removing a first portion including a portion overlapping with the pad electrode, a second portion surrounding the first portion when viewed from above, and a third portion located between the first portion and the second portion; joining the vibration element to the first portion via a metal component; and joining the cover to the second portion. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is a perspective view showing the structure of a vibration device.

[0008] Figure 2 is a plan view showing the structure of a vibration device.

[0009] Figure 3 yes Figure 2 A cross-sectional view of the vibration device along line AA is shown.

[0010] Figure 4 It is enlarged to show Figure 3 A cross-sectional view of portion B of the vibration device shown.

[0011] Figure 5 It is enlarged to show Figure 2 A top view of portion C of the vibration device is shown.

[0012] Figure 6 It is a cross-sectional view showing a method of manufacturing a vibration device.

[0013] Figure 7 It is a cross-sectional view showing a method of manufacturing a vibration device.

[0014] Figure 8 It is a cross-sectional view showing a method of manufacturing a vibration device.

[0015] Fig. 9 It is a cross-sectional view showing a method of manufacturing a vibration device.

[0016] Fig.10 It is a cross-sectional view showing a method of manufacturing a vibration device.

[0017] Fig.11 It is a cross-sectional view showing a method of manufacturing a vibration device.

[0018] Fig.12 It is a cross-sectional view showing a method of manufacturing a vibration device.

[0019] Fig.13 It is a cross-sectional view showing a method of manufacturing a vibration device.

[0020] Fig.14 It is a cross-sectional view showing a method of manufacturing a vibration device.

[0021] Fig.15 It is a cross-sectional view showing a method of manufacturing a vibration device according to a modified example.

[0022] Description of symbols

[0023] 10: base; 10a: third surface as a surface; 10b: second surface; 11: semiconductor substrate; 11a: first surface; 11a1: circuit element; 11b: second surface; 12a: first insulating layer; 12b: second insulating layer; 12c: passivation film; 14a: pad electrode; 14a1: surface; 14b: pad electrode; 16: opening; 18: metal component; 20: cover; 20A: silicon substrate; 21: recess; 30: bonding Layer; 30A1: first metal layer; 30A: first metal pattern; 30B: bonding layer; 30B: second metal pattern; 30C: bonding layer; 30D: first metal pattern; 30D1: outer shape; 40: vibration element; 41: element substrate; 42: first excitation electrode; 43: second excitation electrode; 50: through electrode; 71, 72, 73: external connection terminals; 100: vibration device; 100A: vibration device; 110: base. DETAILED DESCRIPTION

[0024] In the following figures, three axes orthogonal to each other are described as the X-axis, the Y-axis, and the Z-axis. In addition, the direction along the X-axis is referred to as the "X direction", the direction along the Y-axis is referred to as the "Y direction", the direction along the Z-axis is referred to as the "Z direction", the direction of the arrow is the + direction, and the direction opposite to the + direction is referred to as the - direction. In addition, the +Z direction is sometimes referred to as the "upper" or "above" or "front side", the -Z direction is referred to as the "lower" or "below" or "back side", and observations from the +Z direction and the -Z direction are referred to as top-down observations or plane observations. In addition, the surface on the + side of the Z direction is referred to as the "upper surface" or "surface", and the surface on the - side of the Z direction, which will be the opposite side, is referred to as the "lower surface" or "back side".

[0025] First, refer to Figure 1 to Figure 5 The structure of the vibration device 100 is described. In addition, in order to facilitate the description of the internal structure, Figure 2 The vibration device 100 shown in the figure is in a state where the cover 20 is removed.

[0026] like Figure 1 to Figure 3 As shown, the vibration device 100 includes: a base 10 ; a cover 20 disposed on the base 10 ; a bonding layer 30 bonding the base 10 and the cover 20 ; and a vibration element 40 mounted on the base 10 .

[0027] like Figure 2 As shown, the bonding layer 30 is formed in a frame shape in a region surrounding the vibration element 40, in other words, bonding the base 10 and the cover 20. The bonding layer 30 is bonded by surface activated bonding using, for example, gold (Au). In addition, it is not limited to gold (Au), and copper (Cu) or aluminum (Al) may also be used.

[0028] like Figure 3 As shown, the vibration device 100 has an oscillation circuit, and includes a base 10, a cover 20, and a bonding layer 30 bonding the base 10 and the cover 20. The base 10 includes a semiconductor substrate 11 and an insulating layer 12.

[0029] The semiconductor substrate 11 has a first surface 11a and a second surface 11b which is opposite to the first surface 11a. The semiconductor substrate 11 is, for example, a silicon substrate. On the first surface 11a of the semiconductor substrate 11, circuit elements 11a1 including transistors and the like are formed.

[0030] The circuit element 11a1 is, for example, a circuit in which a plurality of active elements such as transistors (not shown) are electrically connected by wiring. The circuit element 11a1 oscillates the vibration element 40. Alternatively, it may be a temperature compensation circuit that corrects the vibration characteristics of the vibration element 40 according to temperature changes.

[0031] An insulating layer 12 made of oxide is disposed on the first surface 11a of the semiconductor substrate 11 so as to cover the circuit element 11a1. The third surface 10a of the insulating layer 12 on the opposite side to the semiconductor substrate 11 is planarized by polishing.

[0032] As the insulating layer 12, for example, SiO 2 (Silicon oxide). In addition, it is not limited to SiO 2 (Silicon oxide) or SiN (Silicon nitride) and other materials.

[0033] A plurality of wiring layers (not shown) are provided on the insulating layer 12. Specifically, pad electrodes 14a, 14b, 14c, wiring layers, etc. electrically connected to the circuit element 11a1 are provided between the third surface 10a and the first surface 11a of the insulating layer 12 on the opposite side of the semiconductor substrate 11, i.e., in the insulating layer 12.

[0034] like Figure 4As shown, the pad electrode 14a is electrically connected to the vibration element 40 via the first metal pattern 30A and the metal member 18 functioning as a bump. The pad electrode 14a is made of, for example, Al (aluminum).

[0035] Specifically, the insulating layer 12 includes a first insulating layer 12a, a passivation film 12c, and a second insulating layer 12b. An opening 16 penetrating the second insulating layer 12b, the passivation film 12c, and the first insulating layer 12a is provided on the pad electrode 14a, that is, at a position overlapping the pad electrode 14a in a plan view.

[0036] By providing the opening 16, a portion of the surface 14a1 of the pad electrode 14a is exposed. Figure 4 and Figure 5 As shown, the first metal pattern 30A is arranged over the exposed surface 14 a 1 of the pad electrode 14 a , the side surface of the opening 16 , and the third surface 10 a around the opening 16 .

[0037] The first metal pattern 30A is, for example, a stacked film of Ti (titanium) and Au (gold). Alternatively, TiW (titanium tungsten) may be used instead of Ti. The metal member 18 is disposed on the first metal pattern 30A overlapping the surface 14a1 in a plan view.

[0038] The pad electrodes 14 a , 14 b , and 14 c and the circuit element 11 a 1 are electrically connected to any one of the external connection terminals 71 , 72 , and 73 disposed on the second surface 10 b of the base 10 via the through-electrode 50 .

[0039] Specifically, the external connection terminals 71, 72, and 73 include a power supply external terminal, a ground external terminal, and an oscillation output external terminal. With such a configuration, the circuit element 11a1 is driven by power supplied from the outside via the power supply external terminal, so that the vibration element 40 oscillates to generate an oscillation signal, and the oscillation signal is output to the outside via the oscillation output external terminal.

[0040] like Figure 2 As shown, the vibration element 40 includes: an element substrate 41 ; a first excitation electrode 42 disposed on one surface of the element substrate 41 ; and a second excitation electrode 43 disposed on the other surface of the element substrate 41 .

[0041] As the constituent material of the first excitation electrode 42 and the second excitation electrode 43, for example, metal materials such as gold (Au), silver (Ag), platinum (Pt), palladium (Pd), iridium (Ir), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), Ti (titanium), tungsten (W), and alloys containing these metal materials can be used.

[0042] The vibration element 40 is fixed to the first metal pattern 30A by being bonded with the metal member 18. The metal member 18 may be a micro bump, a stud bump, etc. The metal member 18 is made of, for example, Au (gold).

[0043] like Figure 3 As shown, the cover 20 is made of, for example, a silicon substrate and is a box-shaped container having a recess 21 for forming a chamber S as a storage space. The base 10 and the cover 20 are bonded via a bonding layer 30, and the vibration element 40 is stored in the recess 21 of the cover 20. That is, the vibration element 40 is hermetically sealed in the space surrounded by the base 10 and the cover 20. In addition, the hermetically sealed space is referred to as a chamber S.

[0044] Next, refer to Figure 6 to Figure 14 A method of manufacturing the vibration device 100 will be described.

[0045] First, in Figure 6 In the process shown in the figure, the base 10A is prepared. Specifically, first, a semiconductor substrate 11 is formed. Figure 3 The circuit element 11a1 including transistors and the like is shown. Next, an insulating layer 12 including an insulating layer, a wiring layer, pad electrodes 14a, 14b, 14c, and a passivation film 12c is formed on the semiconductor substrate 11. The insulating layer 12, i.e., the insulating layers 12a and 12b, are formed by, for example, a CVD (Chemical Vapor Deposition) method. The thickness of the insulating layer 12 is, for example, 4 μm. Alternatively, the film may be formed by sputtering.

[0046] Then, the third surface 10a of the insulating layer 12 is flattened. Specifically, the third surface 10a of the insulating layer 12 on the opposite side of the semiconductor substrate 11 is flattened using, for example, a CMP (Chemical Mechanical Polishing) method. As a result, the third surface 10a of the insulating layer 12 with uneven surfaces becomes flat. The thickness of the insulating layer 12 after flattening is, for example, 1 μm.

[0047] Then, in Figure 7 In the process shown, the opening 16 is formed. Specifically, the opening 16 is formed in a region overlapping the pad electrode 14a in a plan view of the insulating layer 12 using, for example, photolithography and etching techniques. Thus, a portion of the surface 14a1 of the pad electrode 14a is exposed.

[0048] Then, in Figure 8In the process shown, the first metal layer 30A1 is formed on the entire surface of the insulating layer 12, for example, by sputtering. The base layer of the first metal layer 30A1 is, for example, Ti (titanium). The thickness of the base layer is, for example, 0.05 μm. The outermost layer of the first metal layer 30A1 is, for example, Au (gold). The thickness of the outermost layer is, for example, less than 0.15 μm. Since the first metal layer 30A1 is a laminated film of Ti (titanium) and Au (gold), Au can be formed while relieving the stress of the film.

[0049] Then, in Fig. 9 In the process shown, the first metal pattern 30A and the second metal pattern 30B are formed. Specifically, the first metal pattern 30A and the second metal pattern 30B are formed on the first metal layer 30A1 using photolithography technology and etching technology. In addition, the second metal pattern 30B is also called a bonding layer 30B.

[0050] The thickness of the Au of the outermost layer is 0.15 μm, and since it is a thin film, the flatness is good, and further, the resistance of the first metal pattern 30A on the pad electrode 14a can be reduced. In addition, since the same laminated film as the first metal pattern 30A is used for the second metal pattern 30B, the base 10 and the cover 20 can be bonded with high reliability. In addition, the surface roughness Ra of the first metal pattern 30A and the second metal pattern 30B is less than 2 nm.

[0051] In addition, if Fig. 9 As shown, in the first metal layer 30A1, a portion that overlaps with the pad electrode 14a is defined as the first portion, a portion that surrounds the first portion when viewed from above is defined as the second portion, and a portion between the first portion and the second portion is defined as the third portion. That is, the third portion in the first metal layer 30A1 is removed. In this way, the first metal pattern 30A for bonding with the subsequent metal component 18 and the second metal pattern 30B that becomes a part of the bonding layer 30 are formed.

[0052] Then, in Fig.10 In the process shown, the metal member 18 as the bump is formed. Specifically, the metal member 18 is formed in the portion of the first metal pattern 30A that overlaps with the surface 14a1 of the pad electrode 14a in a plan view. The metal member 18 is Au (gold) as described above and is formed by electroless plating.

[0053] The height of the metal component 18 is, for example, 15 μm. The diameter of the metal component 18 is, for example, 30 μm. The outermost layer of the first metal layer 30A1 and the metal component 18 are made of the same Au (gold), so the first metal pattern 30A and the metal component 18 can be easily and reliably bonded. In addition, the wiring resistance, that is, the resistance, of the bonding surface between the first metal pattern 30A and the metal component 18 can be suppressed, and the vibration characteristics of the vibration element 40 can be suppressed from being deteriorated.

[0054] Next, in Fig.11 In the process shown, the vibration element 40 is bonded to the metal member 18. Specifically, a quartz crystal or other piezoelectric material is formed on one side of the element substrate 41. Figure 2 The first excitation electrode 42 shown in FIG. 1 is formed on the other side of the element substrate 41. Figure 2 The second excitation electrode 43 is shown. Then, the completed vibration element 40 is bonded to the metal component 18.

[0055] Then, in Figure 12 to Figure 14 In the process shown in FIG. 1 , the cover 20 is formed. First, Fig.12 In the process shown in FIG. 1 , a silicon substrate 20A is prepared. Next, as shown in FIG. Fig.13 As shown in FIG. 1 , a recess 21 is formed in the silicon substrate 20A. Fig.14 In the illustrated process, a bonding layer 30C of Ti / Au is stacked on the entire surface of the silicon substrate 20A on the side where the recessed portion 21 is provided, for example, by sputtering.

[0056] The thickness of Ti is, for example, 0.04 μm. The thickness of Au is, for example, 0.02 μm. In addition, the bonding layer 30C is not limited to Ti / Au, and may be TiW / Au or the like. Thus, the cover body 20 is completed.

[0057] Next, with the vibration element 40 stored in the storage space between the base 10 and the cover 20, the surfaces of the bonding layers 30B and 30C, that is, Au, are bonded by activation bonding using argon gas in a vacuum atmosphere at room temperature. Figure 3 As shown, the vibration element 40 is hermetically sealed by the bonding layer 30 , the base 10 , and the cover 20 .

[0058] Next, the through-electrode 50 is formed on the base 10. Specifically, first, a through-hole is formed in the base 10 in the region overlapping with the pad electrodes 14b and 14c when viewed from above using photolithography and etching techniques. Then, for example, W (tungsten) is embedded in the through-hole, and the metal film is patterned on the second surface 10b of the base 10, thereby completing the external connection terminals 71, 72, and 73. Thus, the vibration device 100 is completed.

[0059] As described above, the vibration device 100 of the present embodiment has: a base 10, which includes: a semiconductor substrate 11, which has a first surface 11a and a second surface 11b, and a circuit element 11a1 is formed on the first surface 11a; an insulating layer 12, which is arranged on the side of the first surface 11a; and a pad electrode 14a, which is arranged between the third surface 10a of the insulating layer 12 on the opposite side of the semiconductor substrate 11 and the first surface 11a, is electrically connected to the circuit element 11a1, and the insulating layer 12 has an opening portion 16 formed at a position overlapping with the pad electrode 14a when viewed from above, exposing the surface 14a1 of the pad electrode 14a; a first metal pattern 30A, which is arranged on at least a portion of the surface 14a1; a vibration element 40, which is electrically connected to the first metal pattern 30A; and a metal component 18, which is arranged on the first metal pattern 30A overlapping with the surface 14a1 when viewed from above, and electrically connects the first metal pattern 30A to the vibration element 40.

[0060] According to this structure, the pad electrode 14a and the vibration element 40 are electrically connected to the first metal pattern 30A via the metal member 18. Therefore, compared with the case where the pad electrode 14a and the vibration element 40 are electrically connected via a plurality of metal wirings, an increase in resistance between the pad electrode 14a and the vibration element 40 can be suppressed. Therefore, deterioration of the vibration characteristics of the vibration element 40 can be suppressed.

[0061] In addition, since the second metal pattern 30B is formed thinly, flatness can be ensured, and the base 10 and the lid 20 can be well bonded. In addition, since the outermost layer of the second metal pattern 30B and the outermost layer of the first metal pattern 30A are made of the same material Au, the number of manufacturing steps can be reduced and the cost can be suppressed. In addition, by making the film thickness of the Au of the outermost layer of the second metal pattern 30B less than 150nm, the surface roughness Ra of Au can be less than 2nm.

[0062] In addition, when the outermost layer of the first metal pattern 30A is formed thinner, although the resistance increases, the metal component 18 composed of Au is arranged on the first metal pattern 30A, so that the resistance can be suppressed from increasing. Therefore, for example, the vibration characteristics can be suppressed from deteriorating. In addition, by making the metal component 18 the same Au as the outermost layer of the first metal pattern 30A, it can be easily grown by plating.

[0063] In the vibration device 100 of the present embodiment, the outermost layer of the first metal pattern 30A is preferably made of the same material as the metal member 18. According to this structure, since the first metal pattern 30A and the metal member 18 are made of the same material, the first metal pattern 30A and the metal member 18 can be bonded more easily and reliably.

[0064] In the vibration device 100 of the present embodiment, the outermost layer of the first metal pattern 30A is preferably Au (gold). According to this structure, Au is used as the outermost layer, so that the resistance of the bonding surface between the first metal pattern 30A and the metal member 18 can be reduced, and the vibration characteristics of the vibration element 40 can be suppressed from being degraded.

[0065] In the vibration device 100 of the present embodiment, it is preferable that the base layer of the first metal pattern 30A is Ti (titanium). According to this structure, since Ti is used for the base layer, Au can be laminated on the base layer in a good state.

[0066] Furthermore, in the vibration device 100 of the present embodiment, it is preferred that the cover 20 for housing the vibration element 40 is provided, and the second metal pattern 30B for joining the cover 20 is provided on the base 10. According to this structure, since the second metal pattern 30B is provided, the base 10 and the cover 20 are joined by using the second metal pattern 30B, so that the vibration element 40 can be sealed in the cavity S.

[0067] In the vibration device 100 of the present embodiment, it is preferable that the semiconductor substrate 11 includes an oscillation circuit, and the pad electrode 14a is electrically connected to the oscillation circuit. According to this structure, the vibration device 100 can function as an oscillator, and the oscillator can be used with high characteristics.

[0068] In addition, the manufacturing method of the vibration device 100 of the present embodiment has the following steps: preparing a base 10, wherein the base 10 includes: a semiconductor substrate 11, which has a first surface 11a and a second surface 11b, and a circuit element 11a1 is formed on the first surface 11a; an insulating layer 12, which is arranged on the side of the first surface 11a; and a pad electrode 14a, which is arranged between a third surface 10a on the opposite side of the insulating layer 12 to the semiconductor substrate 11 and the first surface 11a, and is electrically connected to the circuit element 11a1; and overlaps with the pad electrode 14a when viewed from above. An opening 16 is formed in the insulating layer 12 to expose the surface 14a1 of the pad electrode 14a; a first metal layer 30A1 is formed on the surface 14a1, the side of the opening 16 and the third surface of the base 10; in the first metal layer 30A1, a first portion overlapping with a portion of the pad electrode 14a, a second portion surrounding the first portion when viewed from above, and a third portion located between the first portion and the second portion are removed; the vibration element 40 is joined to the first portion via the metal component 18; and the cover body 20 is joined to the second portion.

[0069] According to this method, since the pad electrode 14a is electrically connected to the vibration element 40 via the metal member 18 at the first portion of the first metal pattern 30A, it is possible to suppress the increase in resistance between the pad electrode 14a and the vibration element 40 compared to the case where the electrical connection is made via a plurality of metal wirings. Therefore, it is possible to suppress the deterioration of the vibration characteristics of the vibration element 40. In addition, since the opening 16 of the pad electrode 14a is covered with the first metal pattern 30A, it is possible to suppress corrosion of the surface 14a1 of the pad electrode 14a.

[0070] In the manufacturing method of the vibration device 100 of the present embodiment, the outermost layer of the first metal layer 30A1 is preferably made of the same material as the metal member 18. According to this method, the first metal layer 30A1 and the metal member 18 can be easily and reliably bonded because of the same material.

[0071] In addition, in the manufacturing method of the vibration device 100 of the present embodiment, it is preferred that the outermost layer of the first metal layer 30A1 is Au (gold). According to this method, Au is used as the outermost layer, so that the resistance of the bonding surface between the first metal pattern 30A and the metal component 18 can be suppressed, and the vibration characteristics of the vibration element 40 can be suppressed from being degraded.

[0072] In the manufacturing method of the vibration device 100 of the present embodiment, the base layer of the first metal layer 30A1 is preferably Ti (titanium) and the outermost layer is Au (gold). According to this method, since the above materials are stacked, Au can be stacked on the base layer in a good state.

[0073] In the manufacturing method of the vibration device 100 of the present embodiment, the base layer of the first metal layer 30A1 is preferably TiW (titanium tungsten) and the outermost layer is Au (gold). According to this method, since the above materials are stacked, Au can be stacked on the base layer in a good state.

[0074] Modifications of the above-described embodiment will be described below.

[0075] As described above, the outer shape of the first metal pattern 30A is not limited to being provided from the surface 14a1 of the pad electrode 14a to the periphery of the opening 16, and may also be Fig.15 As shown. Fig.15 As shown, the outer shape 30D1 of the first metal pattern 30D of the base 110 of the modification example is arranged on the inner side of the side surface of the opening 16 .

[0076] In this way, since the outer shape 30D1 of the first metal pattern 30D is arranged at a position closer to the inside than the side of the opening portion 16, compared with the case where the outer shape of the first metal pattern 30A is located closer to the outside than the opening portion 16 as in the above-mentioned embodiment, the parasitic capacitance generated between the first metal pattern 30D and the first metal pattern 30D can be suppressed, and the influence on the electrical characteristics of the vibration device 100A can be suppressed.

[0077] As described above, in the vibration device 100A of the modified example, the outer shape 30D1 of the first metal pattern 30D is preferably arranged at a position closer to the inside than the side surface of the opening 16. According to this structure, since the outer shape 30D1 of the first metal pattern 30D is arranged closer to the inside than the side surface of the opening 16, the parasitic capacitance generated between the first metal pattern 30D and the vibration element 40 can be suppressed compared to the case where the outer shape 30D1 of the first metal pattern 30D is closer to the outside than the opening 16, and the influence on the electrical characteristics of the vibration element 40 can be suppressed.

Claims

1. A vibration device, comprising: A base, comprising: A semiconductor substrate having a first surface and a second surface, wherein a circuit element is formed on the first surface; an insulating layer disposed on the first surface side; and a pad electrode disposed between a surface of the insulating layer opposite to the semiconductor substrate and the first surface and electrically connected to the circuit element, wherein the insulating layer has an opening formed at a position overlapping the pad electrode when viewed from above, for exposing a surface of the pad electrode; a first metal pattern disposed on at least a portion of the surface; a vibration element electrically connected to the first metal pattern; as well as The metal component is disposed on the first metal pattern overlapping the surface when viewed from above, and electrically connects the first metal pattern and the vibration element.

2. The vibration device according to claim 1, wherein: The outer shape of the first metal pattern is arranged on an inner side than a side surface of the opening.

3. The vibration device according to claim 1, wherein The outermost layer of the first metal pattern is made of the same material as the metal component.

4. The vibration device according to claim 1, wherein The outermost layer of the first metal pattern is Au.

5. The vibration device according to claim 4, wherein: The base layer of the first metal pattern is Ti.

6. The vibration device according to claim 1, wherein The vibration device has a cover body for accommodating the vibration element. The base is provided with a second metal pattern joined to the cover.

7. The vibration device according to claim 1, wherein The semiconductor substrate includes an oscillation circuit. The pad electrode is electrically connected to the oscillation circuit.

8. A method for manufacturing a vibration device, comprising the following steps: Prepare the base, where The base includes: a semiconductor substrate having a first surface and a second surface, a circuit element being formed on the first surface; an insulating layer disposed on the first surface side; and a pad electrode disposed between a surface of the insulating layer opposite to the semiconductor substrate and the first surface and electrically connected to the circuit element; The insulating layer overlapping the pad electrode when viewed from above forms an opening to expose the surface of the pad electrode; Forming a first metal layer on the surface, the side surface of the opening, and one surface of the base; In the first metal layer, the third portion is removed from among a first portion including a portion overlapping the pad electrode, a second portion surrounding the first portion when viewed from above, and a third portion located between the first portion and the second portion; joining a vibrating element to the first portion via a metal component; and The cover is engaged with the second portion.

9. The method for manufacturing a vibration device according to claim 8, wherein: The outermost layer of the first metal layer is made of the same material as the metal component.

10. The method for manufacturing a vibration device according to claim 8, wherein: The outermost layer of the first metal layer is Au.

11. The method for manufacturing a vibration device according to claim 8, wherein: The base layer of the first metal layer is Ti, and the outermost layer is Au.

12. The method for manufacturing a vibration device according to claim 8, wherein: The base layer of the first metal layer is TiW, and the outermost layer is Au.

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