Packaging element capable of reducing generation of bubbles and manufacturing method thereof
By using composite substrate design and lamination to form a plastic sealing layer in the manufacturing process of printed circuit boards, the bubble problem caused by inconsistent metal deposition rates is solved, and by adding the support layer and insulating material to stabilize the electrical connection, the effect of improving the reliability and voltage resistance of the packaging element is achieved.
Patent Information
- Application Number
- CN202311319659.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-10-12
- Publication Date
- 2025-04-15
- Estimated Expiration
- 2043-10-12
AI Technical Summary
In the manufacturing process of existing printed circuit boards, inconsistent metal deposition rates lead to bubbles in the conductive column, affecting the reliability of electrical connections, and insufficient insulators lead to bubbles around the grains, which may cause arc discharge and short circuits.
The composite substrate design is adopted, which includes an upper conductive layer, a lower conductive layer, accommodating space and a plastic sealing layer. The plastic sealing layer is formed by lamination to fill the through holes and accommodating space, reduce bubble generation, and add support layer and insulating material during the manufacturing process to stabilize electrical connections.
It effectively reduces bubble generation, improves the reliability of packaging components, reduces the risk of arc discharge, and enhances the product's voltage resistance and structural stability.
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Figure CN119835865A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of packaging components, and in particular to a packaging component capable of reducing the generation of bubbles and a manufacturing method thereof. Background Art
[0002] The conventional method of manufacturing a printed circuit board (PCB) is to form a copper foil substrate (CCL) through multiple manufacturing processes, such as drilling, deposition, lamination, etc., wherein a die may be embedded in the copper foil substrate to form a package component. Figure 4 A packaging component 7 includes a copper foil substrate 70, a first metal layer 71 and a second metal layer 72 are formed on the upper surface and the lower surface of the copper foil substrate 70 respectively, and the copper foil substrate 70 has a through hole 73 and a receiving space 74, a metal (such as copper) is deposited in the through hole 73 to form a conductive column 730, and the conductive column 730 is used to electrically connect the first metal layer 71 and the second metal layer 72; the receiving space 74 is used to set a grain 80, and the receiving space 74 is filled with an insulator 75.
[0003] However, in the process of depositing to form the conductive column 730, the speed at which the metal is deposited at the openings at both ends of the through-hole 73 is faster than the speed at which the metal is deposited inside the through-hole 73. Under the condition of inconsistent deposition speeds, the metal often surrounds the air so that at least one bubble exists in the conductive column 730. When the packaging component 7 is subsequently subjected to a reliability test, such as a temperature cycling test (TCT), the at least one bubble will generate an air pressure due to thermal expansion and contraction, causing the conductive column 730 to break and affect the electrical connection between the first metal layer 71 and the second metal layer 72.
[0004] In addition, during the process of forming the insulator 75 in the accommodating space 74, the amount of the insulator 75 is often insufficient, resulting in at least one bubble in the accommodating space 74 and at the periphery of the crystal grain 80. The at least one bubble will become a path for arc discharge, which may cause the crystal grain 80 to be short-circuited by a first surface 81 and a second surface 82 being connected when a high voltage is applied to the crystal grain 80, or even cause the first metal layer 71 on the upper surface of the copper foil substrate 70 to be short-circuited by the second metal layer 72 on the lower surface. Therefore, how to reduce the generation of bubbles in the packaging component coated with the copper foil substrate is a problem that needs to be improved in the existing manufacturing process of the printed circuit board. Summary of the invention
[0005] In view of this, an object of the present invention is to provide a packaging component and a manufacturing method thereof that can reduce the generation of bubbles, thereby reducing the bubbles generated in the packaging component during the manufacturing process and overcoming the problem of product reliability caused by bubbles.
[0006] To achieve the aforementioned object, the present invention provides a packaging element capable of reducing the generation of bubbles, comprising:
[0007] A composite substrate, wherein the upper surface and the lower surface of the composite substrate respectively have an upper conductive layer and a lower conductive layer, and the composite substrate has an accommodating space;
[0008] at least one via formed in the composite substrate and electrically connected to the upper conductive layer and the lower conductive layer;
[0009] A die is disposed in the accommodation space, and the die has a first surface and a second surface opposite to each other;
[0010] a plastic packaging layer covering the composite substrate and filling the inside of the at least one through hole and the accommodating space to encapsulate the die;
[0011] a support layer, buried in the plastic encapsulation layer and located above the upper conductive layer, the support layer having a thickness of at least 10 microns, wherein the plastic encapsulation layer between the bottom surface of the support layer and the upper conductive layer is defined as a first spacing layer, and the plastic encapsulation layer between the top surface of the support layer and the top surface of the plastic encapsulation layer is defined as a second spacing layer, and the thickness of the first spacing layer and the thickness of the second spacing layer are respectively at least 5 microns; and
[0012] A redistribution layer is disposed on the plastic packaging layer, and the redistribution layer is electrically connected to the first surface of the die and the upper conductive layer;
[0013] The plastic encapsulation layer is formed by laminating a first insulating sheet and a second insulating sheet, and the interior of the second insulating sheet includes the support layer; the first insulating sheet and the second insulating sheet are melted by heat and become semi-solidified, and then flow into and fill the interior of the conductive hole and the accommodating space.
[0014] Preferably, the plastic encapsulation layer includes a plurality of first holes and a plurality of second holes, the plurality of first holes expose a portion of the first surface of the die, and the plurality of second holes expose a portion of the upper conductive layer.
[0015] Preferably, the first holes and the second holes are all in an inverted cone shape.
[0016] Preferably, the central positions of the inner walls of the plurality of first holes are concave relative to the positions of the ports thereof, and the central positions of the inner walls of the plurality of second holes are concave relative to the positions of the ports thereof.
[0017] Preferably, the support layer is formed of glass fiber.
[0018] Preferably, the plastic encapsulation layer is formed of unsaturated polyester resin, epoxy resin, phenolic resin or BT resin.
[0019] Preferably, the sum of the thickness of the composite substrate, the thickness of the upper conductive layer and the thickness of the lower conductive layer is greater than or equal to 210 microns.
[0020] Preferably, the inner diameter of the openings at two opposite ends of each of the via holes is smaller than the inner diameter of the central position of the via hole.
[0021] Preferably, the packaging element capable of reducing the generation of bubbles also includes:
[0022] a top surface protection layer covering the redistribution layer and exposing a portion of the redistribution layer to form at least one surface solder joint;
[0023] a bottom surface protection layer, covering the second surface of the grain and the lower conductive layer;
[0024] a bottom seed layer, disposed between the bottom protection layer and the second surface of the grain, and between the bottom protection layer and the lower conductive layer; and
[0025] A surface metal layer is disposed on at least one of the surface welding points.
[0026] Preferably, the redistribution layer has at least one chip connector and at least one substrate connector, at least one chip connector electrically contacts the first surface of the grain, at least one substrate connector electrically contacts the upper conductive layer, and the shape of at least one chip connector and the shape of at least one substrate connector taper along the top surface of the plastic encapsulation layer toward the composite substrate.
[0027] Preferably, the redistribution layer has at least one chip connector and at least one substrate connector, at least one chip connector electrically contacts the first surface of the die, at least one substrate connector electrically contacts the upper conductive layer, at least one chip connector and at least one substrate connector are a conductive column, and the diameters of the two ends of the conductive column are smaller than the diameter of the central position thereof. Another object of the present invention is to provide a method for manufacturing a packaging component that can reduce the generation of bubbles, the method comprising:
[0028] Depositing metal on a composite substrate having at least one through-hole to form an upper conductive layer and a lower conductive layer on the upper surface and the lower surface of the composite substrate respectively, wherein the at least one through-hole is formed into a via hole by metal deposition, and the at least one via hole is electrically connected to the upper conductive layer and the lower conductive layer;
[0029] A containing space penetrating the composite substrate is formed on the composite substrate, and a film is attached to the lower conductive layer to seal the bottom of the containing space, and a die is arranged in the containing space and on the film, wherein the die has a first surface and a second surface, the first surface is exposed in the containing space, and the second surface is arranged on the film;
[0030] A first insulating sheet and a second insulating sheet are stacked in sequence on the upper conductive layer, wherein the second insulating sheet includes a support layer inside and a metal foil is provided on the upper surface of the second insulating sheet;
[0031] The first insulating sheet and the second insulating sheet are laminated, so that the first insulating sheet and the second insulating sheet are heat-melted and semi-solidified, and then flow into and fill the inside of the at least one through hole and the accommodating space to form a plastic sealing layer together, and the plastic sealing layer covers the composite substrate and covers the grain, and the support layer is located above the composite substrate and covered in the plastic sealing layer, wherein the plastic sealing layer between the bottom surface of the support layer and the upper conductive layer is defined as a first spacing layer, and the plastic sealing layer between the top surface of the support layer and the top surface of the plastic sealing layer is defined as a second spacing layer;
[0032] A redistribution layer is formed on the plastic packaging layer, and the redistribution layer is electrically connected to the first surface of the die and the upper conductive layer.
[0033] Preferably, the manufacturing process of forming the redistribution layer includes:
[0034] forming a plurality of holes on the metal foil, the plurality of holes comprising at least one first hole and at least one second hole, the at least one first hole exposing at least one first solder joint on the first surface of the die, and the at least one second hole exposing at least one second solder joint on the upper conductive layer;
[0035] Removing the metal foil to expose the plastic sealing layer, and removing the adhesive film attached to the lower conductive layer to expose the lower conductive layer and the bottom of the accommodating space;
[0036] A top seed layer is first deposited on the top surface of the plastic encapsulation layer and the inner walls of the plurality of holes, and then a connecting metal is deposited, wherein the top seed layer and the connecting metal deposited in the at least one first hole are at least one chip connector, and the top seed layer and the connecting metal deposited in the at least one second hole are at least one substrate connector, at least one chip connector electrically contacts at least one of the first solder joints of the grain, and the at least one substrate connector electrically contacts at least one of the second solder joints of the upper conductive layer.
[0037] Preferably, before removing the metal foil, the plurality of holes are etched so that the shapes of the plurality of holes are gradually reduced along the direction from the top surface protection layer toward the composite substrate.
[0038] Preferably, before removing the metal foil, the plurality of holes are etched so that the plurality of holes are in the shape of a cylinder, and the diameters of the two ends of the cylinder are smaller than the diameter of the center thereof.
[0039] Preferably, the method for manufacturing a packaging component that can reduce the generation of bubbles also includes:
[0040] A top surface protection layer is covered on the redistribution layer and a portion of the redistribution layer is exposed to form at least one surface solder joint, and a bottom surface protection layer is covered on the second surface of the die and the lower conductive layer.
[0041] Preferably, when depositing to form the top seed layer, a bottom seed layer is further deposited on the second surface of the grain and the lower conductive layer. After the deposition of the bottom seed layer is completed, the bottom surface protective layer is formed on the bottom seed layer; and at least one of the surface solder joints is surface treated to be plated with a surface metal layer.
[0042] Preferably, when depositing and forming each of the via holes, the inner diameter of the openings at the two opposite ends of each of the via holes is smaller than the inner diameter at the center of the via hole. Compared with the prior art, the technical solution of the present invention has the following characteristics and advantages:
[0043] When depositing metal on the inner wall of the at least one through-hole of the packaging component of the present invention, the deposition time is controlled so that the openings at both ends of the at least one through-hole are not closed. Compared with the packaging component of the prior art, the packaging component of the present invention does not form a conductive column but forms the at least one conductive hole, and fills the at least one conductive hole with the plastic sealing layer, thereby reducing bubbles generated by inconsistent metal deposition rates during the manufacturing process. When the packaging component of the present invention is subjected to reliability testing, the problem of air pressure generated by bubbles in the prior art is overcome, thereby increasing the reliability of the product.
[0044] In the process of making the packaging element of the present invention, a step of setting a first insulating sheet is added. The first insulating sheet can be hot-melted to provide a sufficient amount of a first insulating material to fill the accommodating space and cover the grain, reduce the generation of bubbles around the edge of the grain and reduce the arc discharge (Arcing) phenomenon, thereby stabilizing the electrical performance of the grain; and in the lamination process, a sufficient amount of the first insulating material can not only fill the at least one conductive hole and the accommodating space, but also form a thickness on the upper conductive layer, namely the first spacing layer, because the bottom of the support layer has a sufficiently thick (greater than or equal to 5 microns) first spacing layer, so that a second insulating material originally located on the top of the support layer can still be maintained on the top of the support layer after hot melting to form the second spacing layer. When there is sufficient thickness between the upper conductive layer and the redistribution layer, when the upper conductive layer or the redistribution layer is acted on a high voltage, the occurrence of arc breakdown (or collapse) can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS
[0045] Figure 1 : A side cross-sectional view of the composite substrate in the packaging component of the present invention;
[0046] Figure 2A to Figure 2N : A schematic diagram of the manufacturing process of the first embodiment of the manufacturing method of the present invention;
[0047] Figure 3A to Figure 3N : A schematic diagram of the manufacturing process of the second embodiment of the manufacturing method of the present invention;
[0048] Figure 4 : Side view of a conventional packaging component. DETAILED DESCRIPTION
[0049] In order to understand the technical features and practical effects of the present invention in detail and to realize the present invention according to the present invention, the embodiments shown in the accompanying drawings are further described in detail as follows:
[0050] The present invention provides a packaging component and a manufacturing method thereof that can reduce the generation of bubbles, wherein the packaging component can be a panel level package (PLP) component. Panel level package (PLP) refers to a manufacturing process in which one or more dies (dies) of an integrated circuit (Integrated circuit) are packaged using a substrate as a carrier. The following is a description of the packaging component manufacturing method and structure of the present invention that can reduce the generation of bubbles in conjunction with the accompanying drawings.
[0051] See also Figure 1 , Figure 11 is a side cross-sectional view of a composite substrate 10. The composite substrate 10 is formed by disposing an upper metal sheet 11A and a lower metal sheet 11B on the top and bottom surfaces of a base layer 11, respectively. For example, the composite substrate 10 may be a copper clad laminate (CCL), that is, the upper metal sheet 11A and the lower metal sheet 11B are respectively copper foils, and the material of the base layer 11 may be BT resin (Bismaleimide Triazine, BT).
[0052] FIG. 2A to FIG. 2N This is a schematic diagram of a first embodiment of the process of manufacturing a packaging component capable of reducing bubble generation according to the present invention. Figure 2A The composite substrate 10 is subjected to a drilling process to form at least one through hole 100 (PTH), wherein the at least one through hole 100 may be formed by, for example, mechanical drilling, laser drilling, or the like.
[0053] See also Figure 2B , then metal deposition is performed on the composite substrate 10 to form an upper conductive layer 12 and a lower conductive layer 13 on the upper metal sheet 11A and the lower metal sheet 11B of the composite substrate 10, respectively. Specifically, metal deposition can be performed by an electroless plating process, an electroplating process, etc., to deposit a metal (for example, copper) on the upper metal sheet 11A and the lower metal sheet 11B of the composite substrate 10 to form the upper conductive layer 12 and the lower conductive layer 13, wherein the sum of the thickness of the composite substrate 10, the thickness of the upper conductive layer 12 and the thickness of the lower conductive layer 13 is defined as a substrate thickness T0, and the substrate thickness T0 is preferably greater than or equal to 210 microns.
[0054] In addition, the upper conductive layer 12 and the lower conductive layer 13 may have different conductive patterns respectively. For example, an alignment hole 120 may be formed on the upper conductive layer 12. The alignment hole 120 can be used for identification in subsequent manufacturing processes. For example, an automatic optical inspection (AOI) machine can calibrate the position of the composite substrate 10 through the alignment hole 120 so that a chip can be accurately set in the composite substrate 10.
[0055] During the deposition of the composite substrate 10, the metal is also deposited on the inner wall of the at least one through-hole 100 to form a conductive hole 101. The at least one conductive hole 101 electrically connects the upper conductive layer 12 and the lower conductive layer 13. During the deposition of the metal in the at least one through-hole 100, metal ions are more likely to gather at the openings at both ends of the at least one through-hole 100 than inside the at least one through-hole 100 (charge tip concentration characteristic), resulting in the inner diameter of the openings at the two ends of each of the conductive holes 101 being smaller than the inner diameter of the central position of the conductive hole 101.
[0056] See also Figure 2C and Figure 2D , the composite substrate 10 after metal deposition is drilled again to form a receiving space 110 penetrating the composite substrate 10, and a film 20 is attached to the lower conductive layer 13 to seal the bottom of the receiving space 110. Figure 2E A die 30 is disposed in the accommodating space 110 and on the adhesive film 20 . The die 30 has a first surface 31 and a second surface 32 opposite to each other. The first surface 31 is located on the top of the die 30 and exposed in the accommodating space 110 , and the second surface 32 is fixed on the adhesive film 20 .
[0057] See also Figure 2F , a first insulating sheet 40 and a second insulating sheet 41 are stacked in sequence on the upper conductive layer 12, specifically, the first insulating sheet 40 is composed of a first insulating material 400, the second insulating sheet 41 includes a second insulating material 410, a supporting layer 411 and a metal foil 412, the second insulating material 410 covers the supporting layer 411, and the metal foil 412 covers the second insulating material 410 and the supporting layer 411, wherein the first insulating material 400 and the second insulating material 410 are both a thermosetting material, such as: resin (Resin), unsaturated polyester resin, epoxy resin, phenolic resin or BT resin (Bismaleimide Triazine, BT), and the supporting layer 411 is mainly formed by interweaving a glass fiber, specifically, the supporting layer 411 is a prepreg fiber (Prepreg), such as a prepreg film produced by impregnating a reinforcing material electronic grade glass fiber cloth with a semi-cured (B-Stage) epoxy resin.
[0058] See also Figure 2G, then the first insulating sheet 40 and the second insulating sheet 41 are laminated (Lamination) to form a plastic layer together. Specifically, during the lamination process, the first insulating material 400 and the second insulating material 410 will melt due to heating, and then become semi-solid (flowable). The first insulating material 400 and the second insulating material 410 together form the plastic layer. The first insulating material 400 flows and fills in the at least one through hole 101 and the accommodating space 110, so that the grain 30 is coated by the first insulating material 400, and the first insulating material 400 covers the upper conductive layer 12. Preferably, the alignment hole 120 is also filled with the first insulating material 400; the second insulating material 410 covers the first insulating material 400, so that the support layer 411 is buried in the plastic layer and is located above the upper conductive layer 12.
[0059] The plastic layer between the bottom surface of the support layer 411 and the upper conductive layer 12 is defined as a first spacer layer L1, and the plastic layer between the top surface of the support layer 411 and the top surface of the plastic layer is defined as a second spacer layer L2. The first spacer layer L1 can be formed by the first insulating material 400, or by the first insulating material 400 and the second insulating material 410, and the second spacer layer L2 is formed by the second insulating material 410, and the first spacer layer L1 and the second spacer layer L2 respectively have a first thickness and a second thickness, and the first thickness and the second thickness are both greater than or equal to 5 microns, and the first thickness is sufficient to allow pure resin to fill the accommodating space 110 and the conductive hole 101 without bubbles, wherein the pure resin is the first insulating material 400 or the first insulating material 400 and the second insulating material 410; the second thickness is sufficient to reduce the arc breakdown during packaging. The thickness of the support layer 411 is at least 10 microns, making the overall structure more stable.
[0060] See also Figure 2H to Figure 2L , which is a process flow for forming a redistribution layer on the plastic layer. Please refer to Figure 2H , a drilling process is performed to form a plurality of holes on the metal foil 412, the plurality of holes including at least one first hole 413 and at least one second hole 414, the at least one first hole 413 is used to expose a portion of the first surface 31 of the die 30, and the at least one second hole 414 is used to expose a portion of the upper conductive layer 12. Specifically, at least one first solder joint (not shown) is formed on the first surface 31, and at least one second solder joint (not shown) is formed on the upper conductive layer 12, the at least one first hole 413 is used to expose the at least one first solder joint, and the at least one second hole 414 is used to expose the at least one second solder joint.
[0061] After the drilling process is completed, the multiple holes will undergo a plasma etching process to remove debris remaining therein due to the drilling. The shape of the multiple holes can be further determined by controlling the length of the plasma etching time. In the present embodiment, the shape of the multiple holes gradually shrinks along the top surface of the plastic encapsulation layer toward the composite substrate 10 and is in an inverted cone shape, that is, the inner diameter of each hole gradually decreases along the top surface of the plastic encapsulation layer toward the composite substrate 10.
[0062] See also Fig.2I , by etching Figure 2H The metal foil 412 is removed to expose the top surface of the second spacer layer L2 (the plastic layer). Figure 2J , remove the adhesive film 20 attached to the lower conductive layer 13 to expose the lower conductive layer 13 and the bottom of the accommodating space 110 (the second surface 32 of the die 30 ). Figure 2K A top seed layer 51 (Seed Layer) is formed on the top surface of the second spacing layer L2 (the plastic packaging layer) and the inner wall of the multiple holes through an electro-less plating process (Electro-less Plating), and a bottom seed layer 52 is formed on the lower conductive layer 13 and the bottom surface of the accommodating space 110 (the second surface 32 of the grain 30) through the aforementioned manufacturing process. Among them, because the shape of the multiple holes is an inverted cone, the top seed layer 51 can also be formed through a sputtering manufacturing process (Sputtering).
[0063] See also Figure 2L A connection metal is deposited on the top seed layer 51 on the top surface of the second spacing layer L2, so that the top seed layer 51 and a connection metal layer 53 are stacked on the top surface of the second spacing layer L2, and the connection metal is also deposited on the top seed layer 51 in the plurality of holes, so that the at least one first hole 413 is filled with the top seed layer 51 and the connection metal to form at least one chip connection 54, and the at least one second hole 414 is filled with the top seed layer 51 and the connection metal to form at least one substrate connection 55, and the at least one chip connection 54 is electrically connected Connected to the connecting metal layer 53 and the first surface 31 of the grain 30 (the at least one first solder joint), the at least one substrate connector 55 is electrically connected to the connecting metal layer 53 and the upper conductive layer 12 (the at least one second solder joint), and in the present embodiment, the shapes of the at least one chip connector 54 and the at least one substrate connector 55 are gradually reduced along the bottom surface of the plastic encapsulation layer toward the composite substrate 10, wherein the redistribution layer includes the top seed layer 51, the connecting metal layer 53, the at least one chip connector 54 and the at least one substrate connector 55.
[0064] See also Figure 2M A top surface protection layer 61 is covered on the connection metal layer 53 (the redistribution layer) and a portion of the connection metal layer 53 (the redistribution layer) is exposed to form at least one surface solder joint 530, and a bottom surface protection layer 62 is covered on the bottom seed layer 52. Figure 2N , a final surface treatment is performed to form a surface metal layer 63 on the at least one surface solder joint 530, and the surface metal layer 63 can be electrically connected to the first surface 31 of the grain 30 (the at least one first solder joint) through the connecting metal layer 53 and the at least one chip connector 54, or electrically connected to the upper conductive layer 12 (the at least one second solder joint) through the connecting metal layer 53 and the at least one substrate connector 55.
[0065] According to the aforementioned Figure 2A to Figure 2N After the process is completed, the packaging element of the present invention is formed to reduce the generation of bubbles (see Figure 2N ) of the first embodiment, and the packaging component of the present invention also has a second embodiment, see FIG. 3A to FIG. 3N , is a schematic diagram of a second embodiment of the process for manufacturing a packaging component capable of reducing bubble generation according to the present invention, wherein: Figure 3A to Figure 3G The process and Figure 2A to Figure 2G The process in is exactly the same and will not be repeated here. The difference between the second embodiment of the packaging component manufacturing process that can reduce the generation of bubbles of the present invention and the first embodiment is that, Figure 3H The steps of the manufacturing process are shown.
[0066] See also Figure 3H After the plurality of holes (including at least one first hole 413 and at least one second hole 414) are formed by the laser drilling process, the plasma etching time is controlled to be longer than that of the first embodiment, so that the plurality of holes are shaped like a cylinder, and the diameters of the two ends of the cylinder are smaller than the diameter of the central position thereof and are barrel-shaped, that is, each of the holes is along the direction of the top surface protection layer 61 toward the composite substrate 10, and the central position of the inner wall of each of the holes is concave relative to the port position of each of the holes. The steps of the subsequent manufacturing process are substantially the same as those of the first embodiment of the present invention and will not be described in detail. The difference between the second embodiment and the first embodiment is that, please refer to Figure 3K When the top seed layer 51 is formed on the top surface of the second spacer layer L2 and the inner wall of the plurality of holes, the top seed layer 51 cannot be formed by sputtering because of the shape of the plurality of holes in this embodiment (barrel-shaped). Figure 3LAs described in the first embodiment, the at least one chip connection member 54 and the at least one substrate connection member 55 are a conductive column. In this embodiment, due to the shapes of the plurality of holes, the diameters of the two ends of the conductive column are smaller than the diameter of the central position thereof. Figure 3A to Figure 3N After the process is completed, the packaging element of the present invention is formed to reduce the generation of bubbles (see Figure 3N ) in the second embodiment.
[0067] In both the first embodiment and the second embodiment of the packaging element of the present invention, when depositing metal on the inner wall of the at least one through hole 100, the deposition time is controlled so that the openings at both ends of the at least one through hole 100 are not closed, which is different from the packaging element 7 of the prior art (see Figure 4 ), the packaging component of the present invention does not form a conductive column but forms the at least one conductive hole 101, and fills the at least one conductive hole 101 with the plastic packaging layer, thereby reducing bubbles generated by inconsistent metal deposition rates during the manufacturing process. When the packaging component of the present invention is subjected to reliability testing, the problem of air pressure generated by bubbles in the prior art is overcome, thereby increasing the reliability of the product.
[0068] In addition, in the process of manufacturing the packaging component of the present invention, a step of setting a first insulating sheet 40 is added. The first insulating sheet 40 can be hot-melted to provide a sufficient amount of the first insulating material 400 to fill the accommodating space 110 and cover the grain 30, thereby reducing the generation of bubbles around the edge of the grain 30 and reducing the arc discharge phenomenon, thereby stabilizing the electrical performance of the grain 30; and when the first insulating sheet 40 can provide a sufficient amount of the first insulating material 400, the overall thickness of the composite substrate 10 (including the upper conductive layer 12 and the lower conductive layer 13) can be increased, and its effect is that the accommodating space 110 can be relatively increased, that is, the thickness of the grain 30 can be relatively increased. When the thickness of the grain 30 is increased, the grain 30 will not need to be thinned during the manufacturing process to increase the yield, or the grain 30 will have enough space for the design layout of the integrated circuit during the manufacturing process.
[0069] Furthermore, during the lamination process, a sufficient amount of the first insulating material 400 can not only fill the at least one conductive hole 101 and the accommodating space 110, but also form a thickness on the upper conductive layer 12, that is, form the first spacing layer L1 together with the second insulating material 410, because the bottom of the support layer 411 has a sufficiently thick first spacing layer L1 (the first thickness is greater than or equal to 5 microns), so that the second insulating material 410 originally located on the top of the support layer 411 can still be maintained on the top of the support layer 411 after hot melting to form the second spacing layer L2; the effect of the sufficiently thick second spacing layer L2 on the top of the support layer 411 is that when forming the top seed layer 51, the sufficiently thick second spacing layer L2 can prevent the fibers in the support layer 411 from being exposed, thereby improving the plating ability of the top seed layer 51 (the top seed layer 51 is not easy to be plated on the fibers).
[0070] And when there is enough thickness between the upper conductive layer 12 and the connecting metal layer 53, when the upper conductive layer 12 or the connecting metal layer 53 is subjected to a high voltage, the occurrence of arc breakdown (or collapse) can be reduced, that is, when there is enough thickness between the upper conductive layer 12 and the connecting metal layer 53, the voltage resistance of the packaging component of the present invention can be improved. In addition, in addition to the above-mentioned effects, the effect of the barrel-shaped holes in the second embodiment of the packaging component of the present invention is that the connecting metal is not only deposited on the top seed layer 51, but also stuck in the multiple holes and is less likely to loosen, thereby increasing the structural stability of the packaging component of the present invention.
[0071] The above only records the implementation methods or embodiments of the technical means used by the present invention to solve the problem, and is not intended to limit the scope of the implementation of the patent of the present invention. That is, all equivalent changes and modifications that are consistent with the scope of the patent application of the present invention or made according to the scope of the patent of the present invention are covered by the scope of the patent of the present invention.
Claims
1. A packaging component capable of reducing the generation of bubbles, characterized in that: include: A composite substrate, wherein the upper surface and the lower surface of the composite substrate respectively have an upper conductive layer and a lower conductive layer, and the composite substrate has an accommodating space; at least one via formed in the composite substrate and electrically connected to the upper conductive layer and the lower conductive layer; A die is disposed in the accommodation space, and the die has a first surface and a second surface opposite to each other; a plastic packaging layer, covering the composite substrate and filling the interior of at least one of the via holes and the accommodating space to encapsulate the die; a supporting layer, buried in the plastic sealing layer and located above the upper conductive layer, the supporting layer having a thickness of at least 10 microns, wherein the plastic sealing layer between the bottom surface of the supporting layer and the upper conductive layer is defined as a first spacing layer, and the plastic sealing layer between the top surface of the supporting layer and the top surface of the plastic sealing layer is defined as a second spacing layer, and the thickness of the first spacing layer and the thickness of the second spacing layer are respectively at least 5 microns; and a redistribution layer, disposed on the plastic packaging layer, wherein the redistribution layer is electrically connected to the first surface of the die and the upper conductive layer; The plastic encapsulation layer is formed by laminating a first insulating sheet and a second insulating sheet, and the interior of the second insulating sheet includes the support layer; the first insulating sheet and the second insulating sheet are melted by heat and become semi-solidified, and then flow into and fill the interior of the conductive hole and the accommodating space.
2. The packaging component capable of reducing bubble generation according to claim 1, characterized in that: The plastic encapsulation layer includes a plurality of first holes and a plurality of second holes. The plurality of first holes expose a portion of the first surface of the die, and the plurality of second holes expose a portion of the upper conductive layer.
3. The packaging component capable of reducing bubble generation according to claim 2, characterized in that: The first holes and the second holes are all in an inverted cone shape.
4. The packaging component capable of reducing bubble generation according to claim 2, characterized in that: The central positions of the inner walls of the plurality of first holes are concave relative to the positions of the ports thereof, and the central positions of the inner walls of the plurality of second holes are concave relative to the positions of the ports thereof.
5. The packaging component capable of reducing bubble generation according to claim 1, characterized in that: The support layer is formed of glass fiber.
6. The packaging component capable of reducing bubble generation according to claim 1, characterized in that: The plastic sealing layer is formed by unsaturated polyester resin, epoxy resin, phenolic resin or BT resin.
7. The packaging component capable of reducing bubble generation according to claim 1, characterized in that: The sum of the thickness of the composite substrate, the thickness of the upper conductive layer and the thickness of the lower conductive layer is greater than or equal to 210 micrometers.
8. The packaging component capable of reducing bubble generation according to claim 1, characterized in that: The inner diameter of the openings at two opposite ends of each of the conducting holes is smaller than the inner diameter at the center of the conducting hole.
9. The packaging component capable of reducing bubble generation according to claim 1, characterized in that: Also includes: a top surface protection layer covering the redistribution layer and exposing a portion of the redistribution layer to form at least one surface solder joint; a bottom surface protection layer, covering the second surface of the grain and the lower conductive layer; a bottom seed layer, disposed between the bottom protection layer and the second surface of the grain, and between the bottom protection layer and the lower conductive layer; and A surface metal layer is disposed on at least one of the surface welding points.
10. The packaging component capable of reducing bubble generation according to claim 1, characterized in that: The redistribution layer has at least one chip connector and at least one substrate connector, at least one chip connector electrically contacts the first surface of the grain, at least one substrate connector electrically contacts the upper conductive layer, and the shape of at least one chip connector and the shape of at least one substrate connector taper along the top surface of the plastic encapsulation layer toward the composite substrate.
11. The packaging component capable of reducing bubble generation according to claim 1, characterized in that: The redistribution layer has at least one chip connector and at least one substrate connector, at least one chip connector electrically contacts the first surface of the grain, at least one substrate connector electrically contacts the upper conductive layer, at least one chip connector and at least one substrate connector is a conductive column, and the diameters of the two ends of the conductive column are smaller than the diameter of its central position.
12. A method for manufacturing a packaging component capable of reducing bubble generation, characterized in that: include: Depositing metal on a composite substrate having at least one through-hole to form an upper conductive layer and a lower conductive layer on the upper surface and the lower surface of the composite substrate respectively, wherein at least one through-hole is formed into a via hole by metal deposition, and at least one via hole is electrically connected to the upper conductive layer and the lower conductive layer; A containing space penetrating the composite substrate is formed on the composite substrate, and a film is attached to the lower conductive layer to seal the bottom of the containing space, and a die is arranged in the containing space and on the film, wherein the die has a first surface and a second surface, the first surface is exposed in the containing space, and the second surface is arranged on the film; A first insulating sheet and a second insulating sheet are stacked in sequence on the upper conductive layer, wherein the second insulating sheet includes a support layer inside and a metal foil is provided on the upper surface of the second insulating sheet; The first insulating sheet and the second insulating sheet are laminated, so that the first insulating sheet and the second insulating sheet are heat-melted and semi-solidified, and then flow into and fill the inside of the at least one through hole and the accommodating space to form a plastic sealing layer together, and the plastic sealing layer covers the composite substrate and covers the grains, and the support layer is located above the composite substrate and covers the plastic sealing layer, wherein the plastic sealing layer between the bottom surface of the support layer and the upper conductive layer is defined as a first spacing layer, and the plastic sealing layer between the top surface of the support layer and the top surface of the plastic sealing layer is defined as a second spacing layer; A redistribution layer is formed on the plastic packaging layer, and the redistribution layer is electrically connected to the first surface of the die and the upper conductive layer.
13. The method for manufacturing a packaging component capable of reducing bubble generation according to claim 12, characterized in that: The manufacturing process of forming the redistribution layer includes: forming a plurality of holes on the metal foil, the plurality of holes comprising at least one first hole and at least one second hole, the at least one first hole exposing at least one first solder joint on the first surface of the die, and the at least one second hole exposing at least one second solder joint on the upper conductive layer; Removing the metal foil to expose the plastic sealing layer, and removing the adhesive film attached to the lower conductive layer to expose the lower conductive layer and the bottom of the accommodating space; A top seed layer is first deposited on the top surface of the plastic encapsulation layer and the inner walls of the plurality of holes, and then a connecting metal is deposited, wherein the top seed layer and the connecting metal deposited in the at least one first hole are at least one chip connector, and the top seed layer and the connecting metal deposited in the at least one second hole are at least one substrate connector, at least one chip connector electrically contacts at least one of the first solder joints of the grain, and the at least one substrate connector electrically contacts at least one of the second solder joints of the upper conductive layer.
14. The method for manufacturing a packaging component capable of reducing bubble generation according to claim 13, characterized in that: Before removing the metal foil, the plurality of holes are etched so that the shapes of the plurality of holes are gradually reduced along the direction from the top surface protection layer toward the composite substrate.
15. The method for manufacturing a packaging component capable of reducing bubble generation according to claim 13, characterized in that: Before removing the metal foil, the plurality of holes are etched to make the plurality of holes have a cylindrical shape, and the diameters of the two ends of the cylinder are smaller than the diameter of the center position thereof.
16. The method for manufacturing a packaging component capable of reducing bubble generation according to claim 12, wherein: Also includes: A top surface protection layer is covered on the redistribution layer and a portion of the redistribution layer is exposed to form at least one surface solder joint, and a bottom surface protection layer is covered on the second surface of the die and the lower conductive layer.
17. The method for manufacturing a packaging component capable of reducing bubble generation according to claim 16, characterized in that: When depositing to form the top seed layer, a bottom seed layer is further deposited on the second surface of the grain and the lower conductive layer. After the deposition of the bottom seed layer is completed, the bottom surface protective layer is formed on the bottom seed layer; and at least one of the surface solder joints is surface treated to be plated with a surface metal layer.
18. The method for manufacturing a packaging component capable of reducing bubble generation according to claim 12, wherein: When forming each of the via holes by deposition, the inner diameter of the openings at two opposite ends of each of the via holes is made smaller than the inner diameter at the center of the via hole.
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