Apparatus for manufacturing semiconductor device

Abstract

An apparatus for manufacturing a semiconductor device of the type comprising a substrate (101) and a film applied onto the substrate by a chemical vapor deposition (CVD) process, comprising: a chamber (2) comprising a reaction and deposition zone (100) in which at least one substrate (101) is arranged, and comprising at least one wall (2D, 2E; 220 '); a first gas source (20) for supplying a stream of process gas (F) into the reaction and deposition zone (100) in a first direction; and a second gas source (40) for supplying gas into the reaction and deposition zone (100) in a second direction. At least one wall (2D, 2E; 220 ') comprises a plurality of holes (28) on the reaction and deposition zone (100) in fluid communication with a second gas source (40) and configured to introduce an inert gas into the reaction and deposition zone (100) to form a gas layer (200) separating at least a portion of the at least one wall (2D, 2E; 220') from contact through the flow of process gas (F).

Description

Technical Field

[0001] The present invention relates to an apparatus for manufacturing a semiconductor device of the type comprising a substrate and a film applied to the substrate by a chemical vapor deposition (CVD) process. Background Art

[0002] This type of apparatus includes a chamber including a reaction and deposition zone in which at least one substrate is arranged and in which a process gas supplied to the process chamber undergoes a CVD process to form a film on the substrate.

[0003] One problem to be dealt with in this type of apparatus is the deposition of particles on the chamber walls resulting from the reaction of the process gases.

[0004] These particles may then grow while adhering to the chamber walls until they detach from them and may be deposited on the substrate, thereby affecting the quality of the film deposited on the substrate. In order to avoid the risk of compromising the quality of the film deposited on the substrate, a common solution is to program maintenance interventions at predetermined intervals to keep the accumulation of these particles in the chamber below a predetermined level.

[0005] However, these obstacles reduce the productivity of the equipment.

[0006] Therefore, there is a felt need to reduce the maintenance frequency of equipment while maintaining the quality of the films achieved on substrates by CVD. Summary of the invention

[0007] The present invention provides an apparatus for manufacturing a semiconductor device to solve the above technical problems.

[0008] The present invention generally relates to a device according to claim 1 .

[0009] The invention also relates to a method according to claim 10 .

[0010] The claims form an integral part of the teaching provided herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Other features and advantages of the invention will become apparent from the following description, which refers to the accompanying drawings, provided by way of non-limiting example only, in which:

[0012] - Figure 1 is a schematic diagram of a preferred embodiment of the apparatus described herein, wherein a process chamber of the apparatus is shown according to a cross-sectional view;

[0013] - Figure 2 It is along Figure 1 The plane II-II shown is cut Figure 1 A cross-sectional view of a processing chamber;

[0014] - Figure 2A is a cross-sectional view of a processing chamber of an alternative embodiment of the apparatus described herein;

[0015] - Figure 3 yes Figure 1 A magnified view of the details;

[0016] - Figure 4 is a schematic diagram of another embodiment of the apparatus described herein, wherein a process chamber of the apparatus is shown according to a cross-sectional view;

[0017] - Figure 5 is a schematic diagram of a second alternative embodiment of the apparatus described herein, wherein a process chamber of the apparatus is illustrated according to a cross-sectional view;

[0018] - Figure 6 shows a process chamber of another embodiment of the apparatus described herein;

[0019] - Fig. 7A and Figure 7B Each shows a diagram representing a curve of an operating parameter as a function of time during a process implemented in the apparatus described here. DETAILED DESCRIPTION

[0020] The following description describes various specific details intended to provide a deeper understanding of the embodiments. The embodiments may be implemented without one or more of the specific details, or with other methods, components, materials, etc. In other cases, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring various aspects of the embodiments.

[0021] The references used herein are purely for convenience and therefore do not limit the scope of protection or the scope of the embodiments.

[0022] As described above, the apparatus described herein is an apparatus for manufacturing a semiconductor device of the type comprising a substrate and a film applied (e.g., deposited) onto the substrate by a chemical vapor deposition (CVD) process or a low pressure chemical vapor deposition (LPCVD) process. For example, the deposited film may comprise or consist of silicon carbide. Preferably, the CVD process is epitaxial CVD.

[0023] Reference Figure 1 and Figure 2 , the apparatus, indicated as a whole by reference numeral 10, comprises a chamber 2 comprising a reaction and deposition zone 100 in which at least one substrate 101 to be subjected to a CVD process is arranged.

[0024] The apparatus further comprises a first gas source 20 for supplying a flow of a process gas F into the reaction and deposition zone 100 .

[0025] The process gas F may include a silicon precursor gas and a carbon precursor gas.

[0026] For example, the silicon precursor gas may be a chlorinated compound, preferably dichlorosilane, trichlorosilane or tetrachlorosilane.

[0027] The carbon precursor gas may be a hydrocarbon, in particular propane or ethylene or acetylene or methane. Other types of precursors may be used.

[0028] The process gas F may also include other precursors, such as sources for n-type and p-type doping. For example, the nitrogen source may be nitrogen, acetonitrile, pyrrole, ammonia, hydrazine, hydrogen cyanide, methylamine.

[0029] The chamber 2 has an inlet 2A for receiving a process gas from a first gas source 20 and an outlet 2B through which a process exhaust gas leaves the chamber 2 .

[0030] The chamber 2 extends along a reference axis Y from an inlet 2A to an outlet 2B and defines an inner flow channel 2C that places the inlet 2A in fluid communication with the outlet 2B and contains a reaction and deposition zone 100 .

[0031] In one or more preferred embodiments, such as the illustrated embodiment, the inner flow channel 2C has a substantially constant and uniform cross-section along the reference axis Y, ie, from the inlet to the outlet and through the reaction and deposition zone 100 .

[0032] In one or more preferred embodiments, such as the illustrated embodiment (see Figure 2 ), the inner flow channel 2C has a rectangular or square cross-section and is defined by multiple walls of the chamber 2, namely, the upper wall 2D, the lower wall 2E, the left side wall 2F and the right side wall 2G.

[0033] In one or more preferred embodiments, such as the illustrated embodiment, a receiving area 2H configured to receive the substrate 101 is provided in the lower wall 2E.

[0034] In one or more preferred embodiments, such as the illustrated embodiment, the receiving region 2H may be provided with a support element 102 that is configured to receive the substrate 101 and that may be rotated about a vertical rotation axis I during operation.

[0035] The substrate 101 accommodated in the receiving area 2H, possibly supported by the supporting element 102, has its upper surface 101A located in a given placement plane l.

[0036] In one or more preferred embodiments, such as the illustrated embodiment, the placement plane L is located above the lower wall 2E.

[0037] Chamber 2 is preferably made of a thermally conductive and high temperature resistant material; note, by the way, that "high temperature" refers to temperatures above 1000° C. and up to 1700° C., which represents the temperature range typically required in a processing chamber during a CVD process. Preferably, chamber 2 is made of graphite.

[0038] In one or more preferred embodiments, such as the illustrated embodiment, the apparatus 10 includes a heating system for heating the reaction and deposition zone 100 to a predetermined temperature, typically within the above-mentioned range of 1000° C. to 1700° C.

[0039] In one or more preferred embodiments, such as the one shown, the heating system is an induction heating system comprising at least one inductor 30, for example in the form of an electric winding surrounding the chamber 2 and extending along the reference axis Y. Preferably, different insulating and / or protective layers are inserted between the inductor 30 and the chamber 2, however, in order to simplify the illustration, Figure 1 and 2 Not shown.

[0040] In one or more preferred embodiments, such as the one shown, the chamber 2 comprises a plurality of bases 21 , 22 , 23 and 24 assembled together and in contact with each other to form the chamber 2 itself.

[0041] Specifically, refer to Figure 2 , the bases 21, 22, 23 and 24 respectively include walls 2D, 2E, 2F and 2G that define the inner flow channel 2C.

[0042] In one or more preferred embodiments, such as the illustrated embodiment, the bases 21 and 22 each have a hollow cylindrical configuration extending parallel to the reference axis Y.

[0043] In particular, in one or more preferred embodiments, such as the illustrated embodiment, the base 21 includes a curved wall 21A and an upper wall 2D connecting opposite side ends of the curved wall 21A to form a hollow cylindrical body having a half-moon shape.

[0044] Similarly, the base 22 includes a curved wall 22A and a lower wall 2E connecting opposite side ends of the curved wall 22A to form a semi-lunar hollow cylindrical body similar to the semi-lunar hollow cylindrical body of the base 21, but in an inverted arrangement relative to the semi-lunar hollow cylindrical body of the base 21.

[0045] As is well known, when alternating current is supplied to the inductor 30, current is induced in the susceptors 21, 22, 23, and 24, and heating of the chamber 2 is determined, thereby heating the reaction and deposition zone 100 to a predetermined temperature.

[0046] A person skilled in the art will understand that the main purpose of the hollow cylindrical configuration of the two bases 21 , 22 is to make the induced current follow the closed shape of the same base.

[0047] On the other hand, it can be noted that the other bases 23 and 24 can eventually be replaced by electrical insulators.

[0048] In one or more preferred embodiments, chamber 2 is constructed according to the teaching of European Patent No. EP3880863B1 to provide a given temperature distribution within the chamber.

[0049] Figure 2A The alternative embodiment shown is Figure 1 and 2 The embodiment of the present invention is different in that the two bases 21, 22 have opposite open ends, and two disks 25A, 25B made of an electrically insulating material are coupled to these open ends to close the corresponding inner cavities 21C, 22C of the two bases 21, 22 from opposite sides. The inlet 2A and the outlet 2B are respectively formed on the two disks 25A, 25B, both of which are communicated with the inner flow channel 2C.

[0050] On the contrary, Figure 6 In another alternative embodiment shown, the chamber 2 comprises an outer base 27 and an inner shell 29, the inner shell 29 containing the inner flow channel 2C and arranged to exchange heat with the outer base 27. The outer base 27 extends circumferentially around the reference axis I so as to completely surround the inner shell 29.

[0051] In operation, the outer base 27 is inductively heated by the inductor 30, while the inner shell 29 is indirectly heated through the outer base 27; preferably, the chamber 2 is configured such that heat transfer from the outer base 27 to the inner shell 29 is achieved via thermal radiation.

[0052] In one or more preferred embodiments, such as the illustrated embodiment, the inner shell 29 can be removed from the outer base 27 according to a translation movement along a direction parallel to the reference axis I for performing preventive maintenance of the inner shell 29.

[0053] In this regard, it may be noted that, in the prior art, preventive maintenance generally involves disassembling the process chamber to allow operators to access the inner flow channels 2C and the reaction and deposition zone 100; this of course requires prolonged downtime of the equipment.

[0054] In contrast, in this embodiment of the apparatus, whenever preventive maintenance is due, the inner housing 29 may simply be removed from the outer base 27, thereby obviating the need for disassembly of the chamber 2.

[0055] Preferably, the inner shell 29 is slidably mounted inside the outer base 27 via longitudinal guides 27A, 27B, which are attached to the inner side of the base 29 and extend along the reference axis I; in the illustrated example, the base 27 is provided with a pair of upper guides 27A engaging the upper side of the inner shell 29, and a pair of lower guides 27B engaging the lower side of the inner shell 29.

[0056] A robot arm provided with an end effector may be used to move the inner housing 29 along the guides 27A, 27B to remove it from the base 27 .

[0057] In one or more preferred embodiments, such as the illustrated embodiment, the inner shell 29 includes a base 29A containing the receiving area 2H, preferably in the form of a conventional drawer (i.e., a container having a bottom and side walls surrounding the bottom), and a cover 29B, which is removably attached to the base 29A so that it can be separated from the base 29A during preventive maintenance, thereby facilitating cleaning of the interior surface of the inner shell 29. In their mutually assembled state, the base 29A and the cover 29 together define the inner flow channel 2C.

[0058] According to an important feature, the apparatus 10 comprises a gas source 40 for supplying an inert gas. Furthermore, at least one wall of the chamber 2 delimiting the reaction and deposition zone 100 comprises a plurality of openings 28, which are in fluid communication with the gas source 40 and are configured to introduce an inert gas into the reaction and deposition zone 100 to form a gas layer 200 which isolates at least a portion of the chamber wall from contact by the flow of the process gas F (see Figure 3 ).

[0059] The inert gas may be a rare gas, such as helium (He), neon (Ne), argon (Ar), krypton (Kr) or xenon (Xe). Preferably, the rare gas may be argon. Generally speaking, the inert gas may be any gas that does not react during the CVD process and does not even interfere with the CVD process in any possible way; in particular, the inert gas does not contain silicon and carbon. The inert gas may be provided in a pressurized tank of the supply unit 40.

[0060] Preferably, the plurality of openings 28 is in the form of a two-dimensional array of openings 28 covering a predetermined area of ​​the wall.

[0061] The opening 28 may have a cross-section of various shapes, such as circular, oval, slit-shaped, etc., depending on the needs and / or circumstances of a particular application.

[0062] Furthermore, the opening 28 may have its longitudinal axis Z1 orthogonal to the wall of the chamber 2 or inclined relative to it. In this second case, the longitudinal axis of the opening 28 is preferably inclined towards the outlet 2B of the chamber 2 (relative to a point of observation outside the chamber), so that the velocity of the inert gas flow leaving from the opening 28 has a component directed towards the outlet 2B itself.

[0063] In one or more preferred embodiments, such as the one shown, the opening 28 is made in the upper wall 2D and preferably covers an area A1 of the same wall extending over the receiving area 2H and also upstream of the receiving area with respect to the direction of flow of the process gas F.

[0064] In one or more preferred embodiments, such as the one shown, the opening 28 is also made in the lower wall 2E and preferably covers an area A2 of the same wall upstream of the receiving area 2H with respect to the direction of the process gas F flow.

[0065] In an alternative embodiment (not shown), at least one wall of the chamber 2 instead comprises a single elongated opening, which itself is configured to introduce an inert gas into the reaction and deposition zone 100 to form the gas layer 200 .

[0066] Preferably, the elongated opening is in the form of a slit and extends in a direction transverse to the direction of the process gas F flow and is configured to introduce a gas curtain into the reaction and deposition zone 100, which gas curtain represents the above-mentioned protective gas layer 200, which is adjacent to the chamber wall and covers the latter from the process gas F flow.

[0067] Preferably, the areas A1 and / or A2 have a width W—measured in a direction transverse to the reference axis Y—at least equal to the width of the receiving area 2H.

[0068] With reference to the above-mentioned elongated opening, preferably, its length is equal to at least 50% of the dimension of the receiving area 2H in a direction transverse to the direction of the gas flow F.

[0069] Considering now the technical problem of parasitic deposition of particles discussed at the outset, the gas layer 200 constitutes a separation layer which prevents particles produced by CVD and contained in the process gas F flow - or at least relevant parts of these particles - from adhering to at least one wall of the chamber 2, such as the upper wall 2D and / or the lower wall 2E.

[0070] In this way, accumulation of particles in the chamber is eliminated, or at least the corresponding accumulation rate is significantly reduced.

[0071] The gas layer 200 is formed and maintained by the inert gas continuously introduced into the chamber 2 through the opening 28. The gas flows on the wall and is finally discharged together with the process exhaust gas through the outlet 2B.

[0072] Those skilled in the art will appreciate that the size, shape, mutual distance, direction, total number, etc. of the openings 28 can be selected based on the characteristics (e.g., area, thickness, density) of the gas layer to be formed. For any specific application of the device described herein, these data can be obtained experimentally. The same applies to operating parameters such as the pressure and flow rate of the inert gas.

[0073] In one or more preferred embodiments, such as the illustrated embodiment, the gas layer 200 formed on the lower wall 2E has a thickness d1 that is less than the distance of the placement plane L from the same wall, so that the upper surface 101A of the substrate 101 located in the same plane L finds itself completely above the gas layer 200, thereby eliminating any possibility that the gas layer 200 may affect the film deposition on the substrate 101.

[0074] Preferably, the openings 28 are the result of machining the wall by removing material, or are the result of producing the wall by a forming process.

[0075] For example, the opening 28 may be made by drilling.

[0076] In an alternative embodiment, the wall (and the chamber component of which it is a part) is realized by casting, and the casting mold has internal features configured to realize the plurality of openings 28 directly in the casting material, such as graphite.

[0077] In one or more preferred embodiments, such as the illustrated embodiment, the base 21 is configured to place its respective opening 28 in fluid communication with the gas source 40 via the inner cavity 21C, so that the latter finds itself constituting a flow channel for delivering the inert gas to the opening 28. For example, in one or more preferred embodiments, such as Figure 2 In the illustrated embodiment, the base 21 has an inlet 21D leading to the inner cavity 21C and connected to the gas source 40; Figure 2A In the embodiment of FIG. 2 , similar openings 21D′, 21C′ are instead formed in disk 25A.

[0078] Similarly, in one or more preferred embodiments, such as the illustrated embodiment, the base 22 is configured to set its opening 28 to be fluidically connected to the gas source 40 via the inner cavity 22C; for example, in one or more preferred embodiments, such as the illustrated embodiment, the base 22 has an inlet 22D that leads to the inner cavity 22C and is connected to the gas source 40.

[0079] In view of the above, it should be understood how the preferred embodiment described above can utilize the internal cavity typically present in bases (such as bases 21 and 22) to connect the openings 28 of the base to the gas source 40, thereby solving the problem of delivering gas to these openings in a very simple and reliable manner.

[0080] Reference now Figure 6 In an alternative embodiment, the opening 28 is made in the cover 29B of the inner shell 29.

[0081] In addition, similar to what was described above with reference to the bases 21 and 22, the outer base 27 is fluidly connected to the gas source 40 and is configured to deliver an inert gas to the opening 28 made in the cover 29B through its inner cavity 27C, particularly the portion thereof defined between the inner side of the outer base 27 and the cover 29B of the inner shell 29.

[0082] In another embodiment, the opening 28 may also be made in the bottom wall of the base 29A defining the receiving area 2H.

[0083] Figure 4 and 5 A further embodiment of the device described here is shown.

[0084] Hereinafter, the same reference numerals as those in the previous embodiment are used to refer to the same or similar parts.

[0085] Figure 4 A processing chamber 2 is shown including an inner shell 210 ′ to define a reaction and deposition zone 100 .

[0086] The process gas may be supplied to the inner shell 210' via an inlet (not shown) disposed at one end of the inner shell or at the same region of the inner shell where the reaction and deposition zone 100 is also located.

[0087] In any case, the flow of the process gas F through the inner shell 210 ′ is parallel to the placement plane L of the substrate 101 .

[0088] The inner shell 210' comprises an upper wall 2D of the flow channel 2C, which is provided with the opening 28, but it has no inner cavity defined together with the wall 2D for conveying the inert gas to the opening 28. Instead, according to this embodiment, the conveying of the inert gas to the opening 28 is achieved via an inner channel 214' made directly in the wall 2D.

[0089] For realizing the inner channel 214 ′ in the wall, the same teachings provided above with reference to the realization of the opening 28 apply.

[0090] on the other hand, Figure 5 A chamber 2 is shown having a wall 220 ′ extending according to a cylindrical shape around an axis Z and delimiting the reaction and deposition zone 100 in such a way that the plane L of placement of the substrate 101 is orthogonal to the axis Z of the same wall. Correspondingly, the process gas F flow is orthogonal to the plane L of placement.

[0091] The wall 220 ′ comprises a plurality of openings 28 , which are preferably arranged to cover the entire cylindrical portion 220 ′A of the wall 220 ′ surrounding the support element 102 .

[0092] The gas layer 200 formed by the inert gas introduced through such an array of openings 28 has a corresponding annular configuration.

[0093] Similar to the previous embodiment, the delivery of the inert gas to the opening 28 is achieved by an inner channel 214' (or a plurality of inner channels) made directly in the wall 220' itself. The inner channel 214' can be made according to the same teachings provided above with reference to the realization of the opening 28.

[0094] Similar to the preferred embodiment, Figure 4 and Figure 5 In two further embodiments of the invention, via the opening 28 (which is in Figure 4 In the embodiment of the present invention, it is made in the upper wall 2D of the inner shell 210', or in Figure 5 The inert gas introduced into the reaction and deposition zone 100 (in the embodiment of the present invention, formed in the wall 220') forms a gas layer 200, which separates the chamber wall from contact by the process gas F flow.

[0095] In one or more preferred embodiments, the apparatus described herein may further include a third gas source (not shown) for supplying a cleaning gas.

[0096] The cleaning gas may be any gas suitable for removing particles from the at least one opening 28 and from the at least one wall 2D of the chamber 2, such as Cl2, ClF3, NF3, O2, HCl and / or combinations thereof, such as Cl2+O2.

[0097] The above examples are applicable to etching silicon carbide deposits, especially at temperatures above 500°C, preferably above 800°C.

[0098] A cleaning gas may be selectively provided in fluid communication with the at least one opening 28 to introduce the cleaning gas into the reaction and deposition zone 100 to remove particles from the at least one opening 28 and from the at least one wall 2D of the chamber 2. In this way, particles that may eventually be deposited on the at least one wall 2D of the chamber 2 may be removed despite the separation provided by the gas layer 200, and any maintenance intervention on the chamber may therefore be postponed.

[0099] In one or more preferred embodiments, the apparatus described herein may further include a fourth gas source (not shown) for supplying an etching gas, such as hydrogen, for performing etching of the SiC parasitic film that has been generated in the chamber 2 as a byproduct of the CVD epitaxial reaction.

[0100] In view of the above, the apparatus described herein can prevent parasitic particles generated as byproducts of a CVD epitaxial reaction from adhering to one or more walls of a reaction chamber.

[0101] Preferably, a process comprising the following steps can be implemented in the described device for preventing such parasitic particles from adhering to at least one wall of the device comprising at least one opening 28:

[0102] (i) heating chamber 2 to a treatment temperature of 1000° C. to 1700° C., preferably 1500° C. to 1650° C.;

[0103] (ii) maintaining the process temperature of chamber 2 constant;

[0104] (iii) flowing the process gas F to the reaction and deposition zone 100 through the flow channel 2C;

[0105] (iv) flowing an inert gas into the reaction and deposition zone 100 through at least one opening 28, thereby forming a gas layer 200 which separates at least a portion of at least one wall (2D, 2E; 220') from contact by the flow of process gas F; and

[0106] (v) cooling the reaction chamber 2 to a temperature ≤ 900° C.;

[0107] wherein steps (iii) and (iv) are performed simultaneously during step (ii), and the process gas F comprises at least a first gas selected from chlorinated compounds, preferably dichlorosilane, trichlorosilane or tetrachlorosilane, and at least a second gas selected from hydrocarbons, preferably propane or ethylene or acetylene or methane.

[0108] Preferably, the above process also includes a step (i') of flowing a cleaning gas into the reaction and deposition zone 100 through at least one opening 28, wherein the cleaning gas comprises Cl2, ClF3, NF3, O2 and / or HCl, and step (i') is performed before step (iii) or after step (iv); preferably, step (i') is performed when the temperature of chamber 2 is higher than 500°C, even more preferably higher than 800°C.

[0109] Preferably, the above process also includes a step (ii') of allowing hydrogen to flow through the flow channel 2C to the reaction and deposition zone 100; wherein step (ii') is performed during step (ii) and before steps (iii) and (iv); if the cleaning gas is not oxygen, step (ii') can be performed simultaneously with step (i').

[0110] Reference now Fig. 7A and 7B , each figure shows a graph showing the variation of chamber temperature with time during the above process, and a flow graph of the inert gas and the cleaning gas respectively passing through the opening 28; steps i), i'), ii), ii'), iv) and v) of the same process are shown along the time line.

[0111] It can be noted that Fig. 7AThe graph relates to an embodiment of the process in which the time interval of step i') coincides with the time interval of step i), and similarly, the time interval of step iv) coincides with the time interval of step ii); this means that cleaning is performed during heating of chamber 2 to the process temperature, after which the CVD process starts immediately, while an inert gas flows into the reaction and deposition zone 100 to protect the chamber walls from the effects of the process gas.

[0112] on the contrary, Figure 7B The graph of refers to a process in which, when the chamber has reached the process temperature, cleaning is still carried out for a while and thereafter, before the CVD process starts, etching of the SiC parasitic film is carried out according to step ii' by flowing hydrogen to the reaction and deposition zone 100, always accompanied by the flow of an inert gas.

[0113] The apparatus described herein may be purposefully configured to implement the above-described processes. For example, the apparatus may include a control unit configured to control a heating system and a gas source of the apparatus in order to implement the process in question.

[0114] Obviously, as long as the principle of the invention is maintained, the details of construction and form of the embodiments may vary, even to a great extent, from what is shown here purely by way of non-limiting example, without departing from the scope of the invention as defined in the appended claims.

Claims

1. An apparatus for manufacturing a semiconductor device of the type comprising a substrate (101) and a film applied to the substrate by a chemical vapor deposition (CVD) process, comprising: - a chamber (2) comprising a reaction and deposition zone (100), in which at least one substrate (101) is arranged, and comprising at least one wall (2D, 2E; 220') delimiting the reaction and deposition zone (100); - a first gas source (20) for supplying a flow of a process gas (F) into the reaction and deposition zone (100) in a first direction; - a second gas source (40) for supplying gas into the reaction and deposition zone (100) in a second direction; wherein at least one wall (2D, 2E; 220') of the chamber (2) comprises at least one opening (28) on the reaction and deposition zone (100), which is fluidically connected to a second gas source (40) and is configured to introduce an inert gas into the reaction and deposition zone (100) to form a gas layer (200), the gas layer (200) separating at least a portion of the at least one wall (2D, 2E; 220') from contact with a flow of a process gas (F).

2. The device according to claim 1, wherein: At least one wall (2D, 2E; 220') of the chamber (2) comprises a plurality of openings (28) configured to introduce an inert gas into the reaction and deposition zone (100) to form the gas layer (200), the plurality of openings being preferably arranged in a two-dimensional array of openings (28) covering a predetermined area (A1, A2; 220'A) of the wall.

3. The device according to claim 1 or 2, wherein: The reaction and deposition zone (100) comprises a receiving area (2H) configured to receive a substrate (101) according to a given placement plane (L), and wherein at least one wall (2D) of the chamber comprising at least one opening (28) is opposite to the receiving area (2H) and is substantially parallel to the placement plane (L).

4. The device according to claim 3, wherein: The chamber (2) includes a second wall (2E) having a receiving area (2H) for receiving a substrate (101), and wherein the second wall (2E) includes at least one opening (28) on an inner zone of the chamber (2), the inner zone being located upstream of the reaction and deposition zone (100) relative to the flow direction of the process gas (F) flow, the at least one opening (28) being fluidically connected to the second gas source (40) and configured to introduce an inert gas into the upstream zone to form a gas layer (200) that separates at least a portion of the second wall (2E) from the process gas flow.

5. The device according to claim 4, wherein: The at least one wall (2D) and / or the second wall (2E) include at least one opening (28) on the inner area of ​​the chamber (2), the inner area being located downstream of the reaction and deposition area (100) relative to the flow direction of the process gas (F) flow, the at least one opening (28) being fluidly connected to the second gas source (40) and configured to introduce an inert gas into the downstream area to form a gas layer (200), the gas layer (200) separating at least a portion of the at least one wall (2D) or the second wall (2E) from the process exhaust gas flow leaving the chamber (2).

6. The device according to any one of the preceding claims, in, The chamber (2) includes at least one susceptor electromagnetically coupled to an inductor and configured to heat the reaction and deposition zone (100) to a predetermined temperature; The base has an inner cavity (21C, 22C) which is arranged to be in fluid communication with the second gas source (40) and configured to deliver the inert gas to the at least one opening (28).

7. The device according to claim 6, wherein: The chamber (2) includes a plurality of bases (21, 22; 21, 22, 23, 24), which are assembled together to define a flow channel (2C) containing a reaction and deposition zone (100) and are arranged to be in fluid communication with the first gas source (20), and wherein at least one of the bases (21, 22) has an inner cavity (21C, 22C) arranged to be in fluid communication with the second gas source (40), and has at least one wall (2D, 2E) between the flow channel (2C) and the inner cavity (21C, 22C) of the base (21, 22), and a hole (28) in at least one wall arranges the inner cavity (21C, 22C) and the flow channel (2C) to be in fluid communication with each other.

8. The device according to claim 7, wherein: The chamber (2) includes a pair of bases (21, 22) and a pair of electrical insulators, which are assembled together and contact each other to define the flow channel (2C) and form the chamber (2).

9. Apparatus according to any one of the preceding claims, wherein: The at least one opening (28) is an elongated opening configured to introduce an inert gas into the reaction and deposition zone (100) to form the gas layer (200), wherein the elongated opening is a slit on the wall (2D) of the chamber (2), extending in a direction transverse to the gas flow direction in the reaction and deposition zone, and having a length equal to at least 50% of the dimension of the receiving area in the same transverse direction.

10. Apparatus according to any one of the preceding claims, wherein: At least one wall (2D, 220') including the at least one opening (28) has an internal passage (214') that fluidly connects the at least one opening (28) to the second gas source (40).

11. Apparatus according to any one of the preceding claims, wherein: The reaction and deposition zone (100) comprises a receiving area (2H) configured to receive a substrate (100) according to a given placement plane (L), and wherein at least one wall (220') of the chamber extends according to a cylindrical shape around an axis (Z) orthogonal to the placement plane (L).

12. The apparatus according to any of the preceding claims comprises a third gas source for supplying a cleaning gas, which can be selectively arranged to be fluidically connected to the at least one opening (28) to introduce a cleaning gas into the reaction and deposition zone (100) to remove particles from at least one opening (28) and from at least one wall (2D) of the chamber (2).

13. A method for manufacturing a semiconductor device of the type comprising a substrate (101) and a film applied to the substrate by a chemical vapor deposition (CVD) process, comprising: - arranging at least one substrate (101) in a reaction and deposition zone (100), the reaction and deposition zone (100) being contained in the chamber (2) and being delimited by at least one wall (2D, 2E; 220') of the chamber (2); - supplying a process gas flow to the reaction and deposition zone (100) of the chamber (2); - introducing an inert gas into the reaction and deposition zone (100) via at least one opening (28) provided in at least one wall of the chamber to form a gas layer (200) separating at least a portion of the at least one wall from the process gas flow.

14. The method according to claim 13, comprising: - introducing a cleaning gas into the reaction and deposition zone (100) via the at least one opening (28) to remove particles from the at least one opening (28) and from at least one wall (2D) of the chamber (2).

15. A process for preventing SiC parasitic particles generated as a by-product of a CVD epitaxial reaction from adhering to at least one wall of a reaction chamber of an apparatus according to any one of claims 1 to 12, wherein: The process includes the following steps: (i) raising the temperature of chamber (2) to a treatment temperature of 1000°C to 1700°C, preferably 1500°C to 1650°C; (ii) maintaining the process temperature of chamber (2) constant; (iii) flowing the process gas (F) through the flow channel (2C) to the reaction and deposition zone (100); (iv) flowing an inert gas into the reaction and deposition zone (100) through at least one opening (28) thereby forming a gas layer (200) separating at least a portion of at least one wall (2D, 2E; 220') from contact by a flow of a process gas (F); and (v) cooling the reaction chamber to a temperature ≤ 900° C.; wherein steps (iii) and (iv) are carried out simultaneously during step (ii), and the treatment gas (F) comprises at least a first gas selected from chlorinated compounds, preferably dichlorosilane, trichlorosilane or tetrachlorosilane, and at least a second gas selected from hydrocarbons, preferably propane or ethylene or acetylene or methane.

16. The process of claim 15, further comprising a step (i') of flowing a cleaning gas into the reaction and deposition zone (100) through the at least one opening (28), wherein The cleaning gas comprises Cl2, ClF3, NF3, O2 and / or HCl, and step (i') is performed before step (iii) or after step (iv), preferably at a temperature above 500°C, even more preferably above 800°C.

17. The process according to claim 15 or 16, further comprising a step (ii') of flowing hydrogen into the reaction and deposition zone (100) through the flow channel (2C); wherein Step (ii') is performed during step (ii) and before steps (iii) and (iv), and wherein, if the cleaning gas is not oxygen, step (ii') is ultimately performed simultaneously with step (i').

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