Sensor device with semiconductor substrate trench and corresponding manufacturing method

Abstract

The embodiment of the invention relates to a sensor device with a semiconductor substrate trench and a corresponding manufacturing method. The invention relates to a sensor arrangement comprising a magnetic field sensor chip. The magnetic field sensor chip includes a semiconductor substrate having a first surface and a second surface opposite the first surface; a sensor element arranged on the first surface, said sensor element being designed to detect a magnetic field present at the location of the sensor element; and at least one trench extending from at least one of the two surfaces into the semiconductor substrate. The sensor element is laterally spaced from the at least one trench.

Description

Technical Field

[0001] The present disclosure relates to a sensor device having a semiconductor substrate trench and a method for manufacturing such a sensor device. Background Art

[0002] Magnetic field sensors can be used in various technical applications. In a specific example, magnetic field sensors can be used in miniature camera modules, such as those contained in smartphones. The latest technology in this field is based on actuator systems consisting of coils, magnets and sensors. Such systems can detect positions, distances and angles and use the measurement data to move system components, such as optical lenses, in an appropriate manner. Target applications in this context can also be optical image stabilization, autofocus or optical zoom.

[0003] The magnetic field sensors used in this way can be stress-sensitive, i.e. the measurement signal of the magnetic field sensor can be undesirably changed due to the mechanical stresses that occur. In small handheld devices, such as smartphones, the magnetic field sensors used should be very thin, which may require a thin housing, but also a sensor chip that is as thin as possible. However, a greatly reduced chip thickness increases the mechanical stress on the magnetic field sensor chip and the sensor elements integrated therein.

[0004] Manufacturers and developers of sensor devices are constantly seeking to improve their products. It may be of particular interest to overcome the above-mentioned problems and to provide sensor devices that achieve high measurement accuracy despite the occurrence of mechanical stresses. It is also desirable to provide a suitable method for producing such a sensor device. Summary of the invention

[0005] Various aspects relate to a sensor device, comprising a magnetic field sensor chip. The magnetic field sensor chip comprises a semiconductor substrate having a first surface and a second surface opposite to the first surface; a sensor element arranged on the first surface, the sensor element being designed to detect a magnetic field present at the location of the sensor element; and at least one trench extending from at least one of the two surfaces into the semiconductor substrate. The sensor element is laterally spaced from the at least one trench.

[0006] Various aspects relate to a sensor device, comprising a magnetic field sensor chip. The magnetic field sensor chip comprises a semiconductor substrate having a first surface and a second surface opposite to the first surface; and a sensor element arranged on one of the two surfaces, the sensor element being designed to detect a magnetic field present at the location of the sensor element. The sensor device further comprises a connecting element arranged on the first surface, the connecting element being designed to connect the sensor device to a carrier. The connecting elements define an area of ​​the first surface between them, wherein all the connecting elements are arranged in the area defined by them. In a top view of the first surface, the sensor element is arranged outside the area defined by the connecting elements. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The device and method according to the present disclosure are explained in more detail below with reference to the accompanying drawings. The same reference numerals may mark the same or similar components. The features of the various examples shown may be combined with each other, as long as they are not mutually exclusive, and / or may be selectively omitted if they are not absolutely necessary to be described.

[0008] Figure 1 includes Figures 1A to 1C , which schematically illustrate a first side view, a bottom view, and a second side view of a sensor device 100 according to the present disclosure.

[0009] Figure 2 includes FIG. 2A to FIG. 2C , which schematically show a side view of a sensor device 200 according to the present disclosure.

[0010] Figure 3 A side view of a sensor device 300 according to the present disclosure is schematically shown.

[0011] Figure 4 A side view of a sensor device 400 according to the present disclosure is schematically shown.

[0012] Figure 5 includes FIG. 5A to FIG. 5C , which schematically show a bottom view and two side views of a sensor device 500 according to the present disclosure.

[0013] Figure 6 A side view of a sensor device 600 according to the present disclosure is schematically shown.

[0014] Figure 7 includes Fig. 7A and Figure 7B , which schematically show a side view and a bottom view of a sensor device 700 according to the present disclosure.

[0015] Figure 8 includes FIG. 8A to FIG. 8C , which schematically illustrate a first side view, a bottom view, and a second side view of a sensor device 800 according to the present disclosure.

[0016] Fig. 9 A flow chart showing a method for manufacturing a sensor device according to the present disclosure is shown.

[0017] Fig.10 A flow chart showing a method for manufacturing a sensor device according to the present disclosure is shown. DETAILED DESCRIPTION

[0018] 1 may include a magnetic field sensor chip 2 having a semiconductor substrate 4 and at least one sensor element 6. The semiconductor substrate 4 may have a first surface 8, a second surface 10 opposite to the first surface 8, and at least one trench 12 extending into the semiconductor substrate 4. Furthermore, the sensor device 100 may also have one or more electrical contacts 14 and one or more connecting elements 16.

[0019] The magnetic field sensor chip 2 or the semiconductor substrate 4 can be made of any semiconductor material, in particular of silicon. The magnetic field sensor chip 2 or the semiconductor substrate 4 can in particular be a "bare chip" which does not necessarily have to be arranged in a housing, but can be further processed and used without such a housing. In this description, the terms "bare die", "chip", "semiconductor bare die" and "semiconductor chip" can be used interchangeably.

[0020] In one example, the magnetic field sensor chip 2 may be a discrete semiconductor chip. A discrete semiconductor chip may correspond to a semiconductor component that is designed to perform a basic electronic function and cannot be subdivided into independent, functional components. In other words, a discrete semiconductor chip may correspond to a semiconductor component that has only one basic function and no multiple complex functions, as may be the case, for example, in a semiconductor integrated circuit. In the present case, the basic function of the magnetic field sensor chip 2 is to detect the magnetic field present at the location of the sensor element 6 and to output a measurement signal based thereon.

[0021] Measured along the Z direction, the thickness d of the semiconductor substrate 1 It can be less than about 110 microns or less than about 100 microns or less than about 90 microns. Figure 1B As can be seen from the bottom view of FIG. 1 , the bottom surface of the sensor device 100 may correspond to the bottom surface of the semiconductor substrate 4. Therefore, the sensor device 100 may be a chip scale package (CSP).

[0022] In the example shown, the sensor element 6 can be arranged on the first surface or the lower side 8 of the semiconductor substrate 4. The sensor element 6 can be designed to detect a magnetic field present at the location of the sensor element 6. More precisely, the sensor element 6 can be designed to detect one or more components of the magnetic field present at the location of the sensor element 6. The various sensitivity directions of the sensor element 6 can depend on the respective applications. In a general example, the sensor element 6 can be sensitive with respect to each of the three spatial directions. That is, the sensor element 6 can be designed to detect the x, y and z components of the magnetic field present at the location of the sensor element 6. In another example, the sensor element 6 is sensitive only with respect to one or two spatial directions. A measurement signal based on the detected magnetic field component can be output by the sensor device 100 through the electrical contacts 14 and the connecting element 16.

[0023] In general, the magnetic field sensor chip 2 or its sensor element 6 is not limited to a specific sensor technology. In the example shown, the sensor element 6 can in particular include a TMR (tunnel hysteresis) sensor element or correspond to such a sensor element, i.e. the magnetic field sensor chip 2 can correspond to a (in particular linear) TMR sensor chip. In other examples, the sensor element 6 can also be implemented differently, for example as an AMR (anisotropic magnetic hysteresis) sensor element or a GMR (giant magnetic hysteresis) sensor element. In other examples, the sensor element 6 can correspond to a Hall sensor element or a fluxgate sensor element.

[0024] The sensor element 6 can be implemented, for example, as a resistor bridge (not shown) with four resistors. The resistors can be, for example, TMR resistors, which can be arranged in the form of a bridge circuit, such as a Wheatstone bridge. The sensor element 6 can be integrated into the circuit of the magnetic field sensor chip 2. In some examples, signal enhancement, analog-to-digital conversion, digital signal processing and / or offset and temperature compensation can be additionally and optionally performed in such a circuit. In addition to the components of the sensor element 6, components for signal enhancement and / or analog-to-digital conversion can also be considered or not considered as part of the sensor element 6.

[0025] At least one trench 12 can extend from at least one of the two surfaces 8 and 10 into the semiconductor substrate 4. In the example shown, at least one trench 12 can extend from the lower side 8 of the semiconductor substrate 4 into the semiconductor substrate. Alternatively or additionally, at least one trench 12 can extend from the upper side 10 of the semiconductor substrate 4 into the semiconductor substrate, as shown and described, for example, in FIG. 2 . At least one trench 12 can extend at least into half of the semiconductor substrate 4. In some examples, at least one trench 12 can extend completely through the semiconductor substrate 4 from the lower side 8 to the upper side 10, as shown and described, for example, in FIG. 5 . At least one trench 12 can be manufactured by any suitable technology. In one example, at least one trench 12 can be etched into the material of the semiconductor substrate 4. For example, a deep trench silicon etching method can be applied here.

[0026] The sensor device 100 can be mounted on a carrier 18, which can be, for example, a circuit board or a printed circuit board (PCB). The components of the sensor device 100 and the carrier 18 can have different coefficients of thermal expansion. As a result, mechanical stresses can arise in the semiconductor substrate 4 during the production and / or operation of the sensor device 100 when temperature fluctuations occur. These mechanical stresses can be transmitted to the sensor element 6 and distort the measurement signal provided by the sensor element. Figure 1C Exemplary scenarios in which such mechanical stresses may occur are shown and described in .

[0027] The at least one trench 12 can be designed to at least partially decouple the sensor element 6 from mechanical stresses occurring in the semiconductor substrate 4. In this context, the at least one trench 12 can also be referred to as a stress decoupling trench. In principle, the position, number and shape of the at least one trench 12 can be selected arbitrarily, as long as the desired mechanical decoupling of the sensor element 6 can be provided by using the at least one trench 12.

[0028] In the example shown, the sensor device 100 may have four grooves 12, as shown in FIG. Figure 1B As shown in the bottom view of Figure 1A and 1C Only two grooves 12 are shown in the side view of FIG. 1 ). In other examples, the number of grooves 12 can also be selected to be different. Figure 1BIn the bottom view of FIG. 1 , the groove 12 can be configured, for example, in an L-shape and surround the sensor element 6. In other examples, the groove 12 can have other configurations and extend completely or at least partially around the sensor element 6 as viewed in the Z direction. Here, the groove 12 can be configured, for example, in the shape of one or more straight lines, a circle or a part of a circle, an ellipse or a part of an ellipse, a square or a part of a square, a rectangle or a part of a rectangle, etc. The grooves 12 do not necessarily have to have a uniform configuration, but can also differ in their shape.

[0029] As in Figure 1B As can be seen in the bottom view of FIG. 4 , the trench 12 can define a boundary between an inner region of the semiconductor substrate 4 and an edge region of the semiconductor substrate 4. In this case, the sensor element 6 can be arranged in particular in the inner region of the semiconductor substrate 4. The sensor element 6 can be spaced apart from the trench 12 laterally and vice versa. In other words, the sensor element 6 and the trench 12 can be arranged laterally offset from each other. In this case, the trench 12 can be arranged in particular between the sensor element 6 and the connecting element 16.

[0030] In the example shown, at least one connection element 16 may be arranged on the underside 8 of the semiconductor substrate 4. The sensor device 100 may have, by way of example, four connection elements 16, wherein the sensor element 6 may be positioned between the connection elements 16. In the case shown, the four connection elements 16 may be arranged, for example, at the corners of a rectangle, while the sensor element 6 may be positioned at the geometric center of gravity of the rectangle.

[0031] The connection element 16 can be designed to electrically and / or mechanically connect the sensor device 100 to the carrier 18. The carrier 18 can be considered as part of the sensor device 100 or not. In the example shown, the connection element 16 can be a solder ball or solder, so that the sensor device 100 can be connected to the carrier 18 by a soldering process. In other examples, the connection element 16 can also be designed differently, for example as a "copper pillar bump", which each has a copper pillar with a cap made of solder material arranged thereon.

[0032] The connection element 16 can be electrically connected to the electrical structure inside the chip, in particular to the sensor element 6, via the electrical contact 14. The measurement signal provided by the sensor element 6 can be output by the sensor device 100 via the connection element 16 and further provided to other electronic components (not shown) via the carrier 18. The electrical contact 14 can be, for example, an under-bump metallization.

[0033] The common thickness d of the connecting element 16 and the electrical contact 14 measured in the Z direction is 2 It can be in the range of about 40 microns to about 60 microns. For example, the thickness d 2A typical value of may be about 50 microns. The thickness d of the semiconductor substrate 4 is as follows: 1 , the total thickness d of the sensor device 100 measured along the Z direction 3 It may therefore be less than about 160 microns or less than about 150 microns or less than about 140 microns.

[0034] Since the thickness d of the sensor device 100 3 Small, the sensor device can be used particularly space-saving and in particular in small applications. In one example, the sensor device 100 can be used in a miniature camera module, such as the camera module can be included in a smartphone, for example. Such a camera module can be based on an actuator system, which can consist of coils, magnets and sensors. The actuator system can detect positions, distances and angles, and the measurement data can be used to move system components, such as optical lenses, in an appropriate manner. In this context, the magnetic field sensor chip 2 can be designed for use in at least one of one or more optical applications of the camera module, such as optical image stabilization applications, autofocus applications, optical zoom applications, etc. The magnetic field sensor chip 2 can detect the magnetic field present at the position of the sensor element 6. Based on the measurement signal provided by the magnetic field sensor chip 2, the position, distance and angle required by the application can then be determined.

[0035] As described above, by forming at least one trench 12 in the semiconductor substrate 4 , the sensor element 6 can be at least partially decoupled from mechanical stresses occurring in the semiconductor substrate 4 . In this context, Figure 1C An exemplary scenario is shown in which such a mechanical decoupling can prevent a falsification of the measurement signal provided by the magnetic field sensor chip 2 .

[0036] In the scenario shown, for example, relatively high temperatures may be present. Due to the different coefficients of thermal expansion of the components shown, the carrier 18 and the semiconductor substrate 4 may be deformed, for example, convexly. Figure 1C In the figure, for the sake of intuitive explanation, such deformation is exaggeratedly shown. Compared with a semiconductor substrate without stress decoupling trenches, the trenches 12 can provide the semiconductor substrate 4 with higher flexibility, so that the mechanical stress acting on the sensor element 6 can be reduced.

[0037] The sensor device 200 of FIG. 2 may have some or all of the features of the sensor device 100 of FIG. 1 . In the example shown, the at least one trench 12 may extend from the second surface 10 or the upper side of the semiconductor substrate 4 into the semiconductor substrate 4. Thus, the at least one trench 12 may extend into a surface of the semiconductor substrate 4 which is opposite to the active surface of the semiconductor substrate 4 having the sensor element 6. This may simplify the manufacture of the sensor device 200, since the construction of the at least one trench 12 and the processing of the active surface of the semiconductor substrate 4 may be performed separately. In this case, the at least one trench 12 may preferably be constructed after the active surface has been manufactured. The at least one trench 12 may extend into the bulk semiconductor material of the semiconductor substrate 4. As viewed in the Z direction, the at least one trench 12 of the sensor device 200 may, for example, be as shown in FIG. Figure 1B , namely in the form of a plurality of L-shaped grooves 12 .

[0038] Figure 2B and Figure 2C Two exemplary scenarios are shown in which the sensor element 6 can be decoupled from mechanical stresses occurring in the semiconductor substrate 4 by using trenches 12 . Figure 1C Similarly, in Figure 2B In the case of a relatively high temperature, the carrier 18 and the semiconductor substrate 4 may be deformed convexly, for example. The groove 12 can provide the semiconductor substrate 4 with a high flexibility, so that the sensor element 6 can be mechanically unloaded. Figure 2C In the scenario of , relatively low temperatures may exist and the carrier 18 and the semiconductor substrate 4 may, for example, be deformed concavely. In this scenario, the trench 12 may also provide the semiconductor substrate 4 with a higher flexibility, so that the sensor element 6 can be mechanically unloaded.

[0039] Figure 3 The sensor device 300 may have some or all of the features of the sensor device described above. In the example shown, the sensor element 6 and the connecting element 16 may be arranged on opposite surfaces of the semiconductor substrate 4. The sensor element 6 may be arranged on the first surface 8 or the upper side of the semiconductor substrate 4, while the connecting element 16 may be arranged on the second surface 10 or the lower side of the semiconductor substrate 4.

[0040] The sensor device 300 can have at least one electrical through-hole 20 extending from the upper side 8 through the semiconductor substrate 4 to the lower side 10, which can be designed to electrically connect the sensor element 6 to at least one of the connecting elements 16 or the associated electrical contact 14. In the example shown, the electrical through-hole 20 can be a vertically extending TSV (Through Silicon Via). The corresponding electrical through-hole 20 can be electrically connected to the corresponding connecting element 16 at the lower side 10 and to the sensor element 6 at the upper side 8. For simplicity, the electrical through-hole 20 is electrically connected to the corresponding connecting element 16 at the lower side 10 and to the sensor element 6 at the upper side 8. Figure 3 The electrical connection between the sensor element 6 and the electrical plated-through hole 20 is not explicitly shown.

[0041] When the sensor device 300 is arranged on a circuit board, the sensor element 6 can be pointed away from the circuit board. This allows the sensor element 6 to be as close as possible to a magnet, which can also be positioned above the circuit board. Such a magnet can be designed, for example, to generate a magnetic field to be measured. In other words, the magnet can correspond to a sensor structure, which in the example shown can be arranged as close as possible to the sensor element 6. The sensor magnet can be mechanically coupled, for example, to a lens, the position of which is to be determined with the aid of the sensor device 300.

[0042] Figure 4 The sensor device 400 may include the sensor device described above, in particular Figure 3 In the example shown, at least one trench 12 may extend from the upper side 8 of the semiconductor substrate 4 into the semiconductor substrate 4. Thus, at least one trench 12 may extend into a surface of the semiconductor substrate 4 that is opposite to an active surface of the semiconductor substrate 4 having the sensor element 6.

[0043] The sensor device 500 of FIG. 5 may have some or all of the features of the sensor device described above. In the example shown, the sensor device 500 may have a plurality of grooves 12, which may extend from the first surface 8 completely through the semiconductor substrate 4 to the second surface 10. A plurality of spring structures 22 made of the material of the semiconductor substrate 4 may be formed between the grooves 12. Here, a corresponding spring structure 22 may be formed between two adjacent grooves 12, respectively. The number of grooves 12 or spring structures 22 formed between the grooves 12 may be, for example, greater than about 10, or greater than about 15, or greater than about 20. The spring structure 22 may in particular have a curved shape (e.g., a wave shape, an S shape, a U shape, a V shape, etc.), thereby providing the spring structure with the desired elasticity. The spring structure 22 may be designed to allow elastic (reversible) deformation.

[0044] In one example, the groove 12 can be produced by an etching process, wherein the spring structure 22 can remain as a residual part of the bulk semiconductor material (e.g. bulk silicon) after etching. By producing the groove 12, a region 24 of the semiconductor substrate 4 can be formed, which is suspended at the spring structure 22. The sensor element 6 can be arranged in this suspended region 24. Since the spring structure 22 is elastic and provides an elastic suspension of the region 24, the region 24 and therefore the sensor element 6 can be at least partially decoupled from mechanical stresses occurring in the semiconductor substrate 4. By using the groove 12 or the suspended region 24, distortions of the measurement signal of the sensor device 500 can therefore be prevented or at least reduced.

[0045] The thickness d of the semiconductor substrate 4 in the region above the sensor element 6 measured in the Z direction 4 can be smaller than the thickness d θ of the semiconductor substrate 4 in the region next to the sensor element 6 measured in the Z direction. 1 In the example shown, the thickness d of the suspension region 24 is 4 In particular, it can be smaller than the thickness d t of the semiconductor substrate 4 at locations outside the suspension region 24 . 1 The thickness d of the suspension area 24 is 4 The smaller θ, the better the mechanical decoupling of sensor element 6 from mechanical loads in semiconductor substrate 4 .

[0046] Figure 6 The sensor device 600 may include the sensor device described above, in particular Figure 3 5 and some or all of the features of the sensor devices 300 and 500. In the example shown, the sensor element 6 and the connecting element 16 can be arranged on opposite surfaces of the semiconductor substrate 4. The sensor element 6 can be arranged on the upper side or the first surface 8 of the semiconductor substrate 4, while the connecting element 16 can be arranged on the lower side or the second surface 10 of the semiconductor substrate 4.

[0047] and Figure 3 5 , the sensor device 600 may have a spring structure 22 formed in the semiconductor substrate 4 and a region 24 of the semiconductor substrate 4 suspended from the spring structure 22, wherein the sensor element 6 may be arranged on the region 24 suspended from the spring structure 22.

[0048] The sensor device 700 of FIG. 7 may include a magnetic field sensor chip 2 having a semiconductor substrate 4, which may have a first surface 8 and a second surface 10 opposite to the first surface 8. At least one sensor element 6 may be arranged on one of the two surfaces 8 and 10, which sensor element may be designed to detect a magnetic field present at the location of the sensor element 6. Furthermore, a connecting element 16 may be arranged on the first surface 8, which connecting element may be designed to connect the sensor device 700 to a carrier (not shown). The components of the sensor device 700 may be similar to the corresponding components of the sensor devices described previously and have similar properties.

[0049] In the example shown, not only the sensor element 6 but also the connecting element 16 can be arranged on the underside 8 of the semiconductor substrate 4. In a further example, the sensor element 6 and the connecting element 16 can be arranged on opposite surfaces of the semiconductor substrate 4. In the case shown, the sensor device 700 can have four connecting elements 16 by way of example. The connecting elements 16 can define a region 26 of the first surface 8 located between them. The region 26 can be a simple continuous region. In the example shown, the region 26 can correspond to the area of ​​a rectangle, at the corners of which the connecting elements 16 can be arranged. The rectangle is in Figure 7B In the bottom view of FIG.

[0050] All connecting elements 16 can be arranged in the area 26 defined by them. In contrast, the sensor element 6 can be arranged outside the area 26. The sensor element 6 can be arranged in particular in the edge area (or at least one edge) of the first surface 8, wherein all connecting elements 16 can be arranged outside this edge area. Fig. 7A It can be seen in the side view of FIG. 1 that this edge region can overhang the connecting element 16 or protrude beyond the region 26 defined by the connecting element 16 .

[0051] The sensor device 700 can be connected to a carrier (not shown) via a connecting element 16. For example, in combination with Figure 1C As described, carrier and semiconductor substrate 4 may deform during production or operation of sensor device 700. Mechanical stresses occurring in semiconductor substrate 4 may occur primarily in the region of connecting element 16 or in region 26 defined by the connecting element 16. Since sensor element 6 is arranged outside region 26, sensor element 6 may be at least partially decoupled from mechanical stresses within semiconductor substrate 4.

[0052] The sensor device 800 of FIG8 may have some or all features of the sensor devices described above, in particular the sensor devices 100 and 700 of FIG1 and FIG7. Similar to the example of FIG7, in the sensor device 800, the sensor element 6 may be arranged outside the area 26 defined by the connecting element 16. Similar to the example of FIG1, the sensor device 800 may have at least one trench 12 extending from at least one of the two surfaces 8 and 10 into the semiconductor substrate 4, wherein the sensor element 6 is spaced apart from the at least one trench 12 at the side.

[0053] In the example shown, at least one trench 12 can extend from the active underside 8 into the semiconductor substrate 4. In the sensor device 800, a double decoupling of the sensor element 6 from mechanical stresses occurring in the semiconductor substrate 4 can thus be provided. On the one hand, by positioning the sensor element 6 outside the region 26 defined by the connecting element 16 and, on the other hand, by at least one trench 12 arranged laterally relative to the sensor element 6.

[0054] Fig. 9 and Fig.10 A flow chart showing a method for manufacturing a sensor device according to the present disclosure is shown. Fig. 9 and Fig.10 The methods are described in a general form to qualitatively illustrate various aspects of the present disclosure. These methods may include additional aspects. For example, these methods may be extended to any aspect described herein in conjunction with other examples. In particular, these methods may be used to manufacture the sensor device according to the present disclosure described previously.

[0055] Fig. 9 A first method for producing a sensor device according to the present disclosure is shown. Fig. 9 The method can be used, for example, to manufacture FIG. 1 to Figure 6 The sensor device of the present invention. In an operation 28, a magnetic field sensor chip may be manufactured. The manufacture of the magnetic field sensor chip may include an operation 28a of providing a semiconductor substrate having a first surface and a second surface opposite to the first surface. The manufacture of the magnetic field sensor chip may also include an operation 28b of constructing a sensor element arranged on the first surface, the sensor element being designed to detect a magnetic field present at the location of the sensor element. The manufacture of the magnetic field sensor chip may also include an operation 28c of constructing at least one trench extending from at least one of the two surfaces into the semiconductor substrate. The sensor element may be spaced apart from the at least one trench at the side.

[0056] Fig.10 A second method for producing a sensor device according to the present disclosure is shown. Fig.10The method can be used, for example, to manufacture the sensor devices of Figures 7 and 8. In an operation 30, a magnetic field sensor chip can be manufactured. The manufacture of the magnetic field sensor chip may include an operation 30a of providing a semiconductor substrate having a first surface and a second surface opposite to the first surface. The manufacture of the magnetic field sensor chip may also include an operation 30b of constructing a sensor element arranged on one of the two surfaces, the sensor element being designed to detect a magnetic field present at the location of the sensor element. In operation 32, a connecting element may be arranged on the first surface, the connecting element being designed to connect the sensor device to a carrier. The connecting elements may define an area of ​​the first surface located between them, wherein all connecting elements may be arranged in the area defined by the connecting elements. In a top view of the first surface, the sensor element may be arranged outside the area defined by the connecting elements.

[0057] Example

[0058] In the following, a sensor device according to the disclosure and an associated production method are described using examples.

[0059] Example 1 is a sensor device, comprising: a magnetic field sensor chip, comprising: a semiconductor substrate having a first surface and a second surface opposite to the first surface; a sensor element arranged on the first surface, the sensor element being designed to detect a magnetic field present at the position of the sensor element; and at least one groove extending from at least one of the two surfaces into the semiconductor substrate, wherein the sensor element is spaced apart from the at least one groove on the side.

[0060] Example 2 is a sensor device according to Example 1, wherein the at least one trench is designed to at least partially decouple the sensor element from mechanical stresses occurring in the semiconductor substrate.

[0061] Example 3 is the sensor device according to Example 1 or 2, wherein at least one trench defines a boundary between an inner region of the semiconductor substrate and an edge region of the semiconductor substrate, wherein the sensor element is arranged in the inner region of the semiconductor substrate.

[0062] Embodiment 4 is a sensor device according to one of the preceding examples, wherein at least one trench extends from the first surface into the semiconductor substrate.

[0063] Embodiment 5 is the sensor device according to one of Examples 1 to 3, wherein at least one trench extends from the second surface into the semiconductor substrate.

[0064] Embodiment 6 is a sensor device according to one of the preceding examples, wherein at least one trench extends at least up to half of the semiconductor substrate.

[0065] Embodiment 7 is a sensor device according to one of the aforementioned examples, wherein at least one groove is configured in an L-shape in a top view of the first surface.

[0066] Example 8 is a sensor device according to one of the preceding examples, wherein at least one trench extends completely through the semiconductor substrate from the first surface to the second surface.

[0067] Example 9 is a sensor device according to Example 8, wherein the magnetic field sensor chip further includes: a spring structure formed between multiple grooves of at least one groove and composed of a material of the semiconductor substrate, and an area of ​​the semiconductor substrate suspended at the spring structure, wherein the sensor element is arranged on the area suspended at the spring structure.

[0068] Example 10 is a sensor device according to one of the preceding examples, wherein a thickness of the semiconductor substrate in a region above the sensor element is smaller than a thickness of the semiconductor substrate in a region next to the sensor element.

[0069] Example 11 is a sensor device according to one of the preceding examples, further comprising at least one connecting element designed to connect the sensor device to a carrier, wherein the at least one connecting element is arranged on the first surface of the semiconductor substrate.

[0070] Example 12 is a sensor device according to one of Examples 1 to 10, further comprising at least one connecting element designed to connect the sensor device to a carrier, wherein the at least one connecting element is arranged on the second surface of the semiconductor substrate.

[0071] Example 13 is a sensor device according to Example 12, wherein the magnetic field sensor chip further comprises at least one electrical through-contact extending from the first surface through the semiconductor substrate to the second surface, the electrical through-contact being designed to connect the sensor element to the at least one connecting element.

[0072] Example 14 is a sensor device according to one of the preceding examples, wherein the sensor element comprises a TMR sensor element.

[0073] Example 15 is a sensor device according to one of the preceding examples, wherein the sensor device is a chip scale package.

[0074] Example 16 is a sensor device according to one of the preceding examples, wherein the thickness of the semiconductor substrate is less than 110 microns, and / or the thickness of the sensor device is less than 160 microns.

[0075] Example 17 is a sensor device according to one of the preceding examples, wherein the magnetic field sensor chip is a discrete semiconductor chip.

[0076] Example 18 is a sensor device comprising a magnetic field sensor chip, which includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, and a sensor element arranged on one of the two surfaces, the sensor element being designed to detect a magnetic field present at the location of the sensor element; and a connecting element arranged on the first surface, the connecting element being designed to connect the sensor device to a carrier, wherein the connecting elements define an area of ​​the first surface located between them, wherein all the connecting elements are arranged in the area defined by the connecting elements, and wherein the sensor elements are arranged outside the area defined by the connecting elements in a top view of the first surface.

[0077] Example 19 is a sensor device according to Example 18, wherein the sensor element is arranged on the first surface of the semiconductor substrate.

[0078] Example 20 is a sensor device according to Example 19, wherein the sensor element is arranged in an edge region of the first surface, wherein all connecting elements are arranged outside the edge region.

[0079] Example 21 is a sensor device according to Example 19, wherein the sensor element is arranged on the second surface of the semiconductor substrate.

[0080] Example 22 is a sensor device according to one of Examples 18 to 21, wherein the magnetic field sensor chip further comprises at least one trench extending from at least one of the two surfaces into the semiconductor substrate, wherein the sensor element is laterally spaced apart from the at least one trench.

[0081] Although specific embodiments are shown and described herein, it is apparent to one of ordinary skill in the art that the specific embodiments shown and described may be replaced with a plurality of alternative and / or equivalent embodiments without departing from the scope of the present disclosure. This application shall cover all adaptations or variations of the specific embodiments discussed herein. It is therefore intended that the present disclosure be limited only by the claims and their equivalents.

Claims

1. A sensor device, comprising: A magnetic field sensor chip (2), comprising A semiconductor substrate (4) having a first surface (8) and a second surface (10) opposite to the first surface (8), a sensor element (6) arranged on the first surface (8), the sensor element being designed to detect a magnetic field at the location of the sensor element (6), and at least one trench (12) extending from at least one of the two surfaces (8, 10) into the semiconductor substrate (4), The sensor element (6) is spaced apart laterally from the at least one groove (12). 2 . The sensor device according to claim 1 , wherein the at least one trench ( 12 ) is designed to decouple the sensor element ( 6 ) at least partially from mechanical stresses occurring in the semiconductor substrate ( 4 ).

3. The sensor device according to claim 1 or 2, wherein the at least one trench (12) defines a boundary between an inner region of the semiconductor substrate (4) and an edge region of the semiconductor substrate (4), wherein the sensor element (6) is arranged in the inner region of the semiconductor substrate (4).

4. The sensor device according to any of the preceding claims, wherein the at least one trench (12) extends from the first surface (8) into the semiconductor substrate (4).

5. The sensor device according to any one of claims 1 to 3, wherein the at least one trench (12) extends from the second surface (10) into the semiconductor substrate (4). 6 . The sensor device according to claim 1 , wherein the at least one trench ( 12 ) extends at least as far as half of the semiconductor substrate ( 4 ).

7. The sensor device according to claim 1, wherein the at least one groove (12) is L-shaped in a plan view of the first surface (8).

8. The sensor device according to any of the preceding claims, wherein the at least one trench (12) extends from the first surface (8) completely through the semiconductor substrate (4) as far as the second surface (10).

9. The sensor device according to claim 8, wherein the magnetic field sensor chip (2) further comprises: a spring structure (22) formed between a plurality of trenches of the at least one trench (12) and consisting of a material of the semiconductor substrate (4), and A region (24) of the semiconductor substrate (4) suspended from the spring structure (22), wherein the sensor element (6) is arranged on the region (24) suspended from the spring structure (22).

10. The sensor device according to claim 1, wherein a thickness of the semiconductor substrate (4) in a region above the sensor element (6) is smaller than a thickness of the semiconductor substrate (4) in a region next to the sensor element (6).

11. The sensor device according to any one of the preceding claims, further comprising: At least one connecting element (16) is designed to connect the sensor device to the carrier (18), wherein the at least one connecting element (16) is arranged on a first surface (8) of the semiconductor substrate (4).

12. The sensor device according to any one of claims 1 to 10, further comprising: At least one connecting element (16) is designed to connect the sensor device to a carrier (18), wherein the at least one connecting element (16) is arranged on the second surface (10) of the semiconductor substrate (4).

13. The sensor device according to claim 12, wherein the magnetic field sensor chip (2) further comprises: At least one electrical through-hole (20) extends from the first surface (8) through the semiconductor substrate (4) to the second surface (10), the electrical through-hole being designed to connect the sensor element (6) to the at least one connecting element (16).

14. The sensor device according to any of the preceding claims, wherein the sensor element (6) comprises a TMR sensor element.

15. The sensor device according to any of the preceding claims, wherein the sensor device is a chip scale package.

16. The sensor device according to any one of the preceding claims, wherein The thickness of the semiconductor substrate (4) is less than 110 micrometers, and / or The sensor device has a thickness of less than 160 microns.

17. The sensor device according to any of the preceding claims, wherein the magnetic field sensor chip (2) is a discrete semiconductor chip.

18. A sensor device comprising: A magnetic field sensor chip (2), comprising: a semiconductor substrate (4) having a first surface (8) and a second surface (10) opposite to the first surface (8), and a sensor element (6) arranged on one of the two surfaces (8, 10), the sensor element being designed to detect a magnetic field at the location of the sensor element (6); and a connecting element (16) arranged on the first surface (8), the connecting element being designed to connect the sensor device to a carrier (18), wherein the connecting elements (16) define a region (26) of the first surface (8) located between the connecting elements, wherein all connecting elements (16) are arranged in the region (26) defined by the connecting elements, In a plan view of the first surface (8), the sensor element (6) is arranged outside a region (26) defined by the connecting element (16).

19. The sensor device according to claim 18, wherein the sensor element (6) is arranged on the first surface (8) of the semiconductor substrate (4). 20 . The sensor device according to claim 19 , wherein the sensor element ( 6 ) is arranged in an edge region of the first surface ( 8 ), wherein all connecting elements ( 16 ) are arranged outside the edge region.

21. The sensor device according to claim 19, wherein the sensor element (6) is arranged on the second surface (10) of the semiconductor substrate (4).

22. The sensor device according to any one of claims 18 to 21, wherein the magnetic field sensor chip (2) further comprises: At least one trench (12) extends from at least one of the two surfaces (8, 10) into the semiconductor substrate (4), wherein the sensor element (6) is spaced apart laterally from the at least one trench (12).

Images