Device breakdown voltage simulation method, device, electronic device and storage medium

Abstract

The present invention provides a device breakdown voltage simulation method, apparatus, electronic device, and storage medium. The method comprises: obtaining an initial test voltage, voltage step, current step, and device parameters of a target device; solving a simulation current of the target device based on the initial test voltage, voltage step, and device parameters; obtaining a soft breakdown current of the target device when determining that the simulation current growth trend of the target device meets a preset condition; and solving the simulation voltage of the target device based on the soft breakdown current, current step, and device parameters. The present invention can set a larger voltage step threshold for the voltage step in the steady growth phase of the test voltage; and set a smaller current step threshold for the current step in the exponential growth phase of the simulation current, thereby reducing the number of repeated iterations in the breakdown voltage simulation process of the device, eliminating the need to spend a lot of time on repeated iterative solution processes, and improving the breakdown voltage simulation speed of the device.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a device breakdown voltage simulation method, device, electronic equipment and storage medium. Background Art

[0002] When simulating the breakdown voltage of a device, it is first necessary to perform device simulation to obtain a simulated device, then solve the simulated current of the simulated device based on the scanned voltage, voltage step and device parameters of the simulated device, and finally determine the breakdown voltage of the simulated device based on the voltage-current curve generated by the simulated voltage and simulated current.

[0003] The solution of the simulated current is divided into two solution stages: before the simulated device is broken down by voltage and after the breakdown. Before the simulated device is broken down by voltage, the growth trend of the voltage of the simulated device is stable, and the simulated current is basically unchanged. A larger voltage step threshold can be used to quickly solve the simulated current; after the simulated device is broken down by voltage, the growth step of the voltage of the simulated device is very small, and the growth trend of the simulated current is exponential. Therefore, in order to prevent the simulated current solution after the simulated device is broken down by voltage from being stopped due to the excessively large voltage step threshold, and to improve the convergence of the breakdown voltage simulation of the simulated device, it is necessary to set a very small voltage step threshold. The voltage step threshold is global, that is, a very small voltage step threshold needs to be set in both solution stages. This will lead to a serious waste of simulation resources when solving the simulated current before the simulated device is broken down by voltage. Therefore, how to avoid the serious waste of simulation resources before the voltage breakdown is a problem that needs to be solved urgently. Summary of the Invention

[0004] The present invention provides a device breakdown voltage simulation method, device, electronic equipment and storage medium, which can solve the problem of serious waste of simulation resources before the device is broken down by voltage.

[0005] According to a first aspect of the present invention, a method for simulating the breakdown voltage of a device is provided, the method comprising:

[0006] Obtain the initial test voltage, voltage step, current step, and device parameters of the target device;

[0007] Calculating a simulation current of the target device according to the initial test voltage, the voltage step size, and the device parameters;

[0008] When it is determined that the simulated current growth trend of the target device meets a preset condition, obtaining the soft breakdown current of the target device;

[0009] A simulation voltage of the target device is calculated based on the soft breakdown current, the current step size, and the device parameters.

[0010] According to a second aspect of the present invention, there is provided a device for simulating breakdown voltage of a device, the device comprising:

[0011] A parameter acquisition module is used to obtain the initial test voltage, voltage step, current step and device parameters of the target device;

[0012] a current solving module, configured to solve the simulated current of the target device according to the initial test voltage, the voltage step size, and the device parameters;

[0013] A trend determination module, configured to obtain a soft breakdown current of the target device when it is determined that the simulated current growth trend of the target device meets a preset condition;

[0014] A voltage solving module is used to solve the simulation voltage of the target device according to the soft breakdown current, the current step size and the device parameters.

[0015] According to a third aspect of the present invention, there is provided an electronic device comprising a processor and a memory.

[0016] The memory is used to store code and related data;

[0017] The processor is configured to execute the code in the memory to implement the device breakdown voltage simulation method as described in any one of the embodiments of the present invention.

[0018] According to a fourth aspect of the present invention, a storage medium is provided, on which a computer program is stored. When the program is executed by a processor, the method for simulating the breakdown voltage of a device as described in any one of the embodiments of the present invention is implemented.

[0019] In an embodiment of the present invention, the initial test voltage, voltage step, current step, and device parameters of the target device are obtained; based on the initial test voltage, voltage step, and device parameters, the simulated current of the target device is solved; when it is determined that the simulated current growth trend of the target device meets a preset condition, the soft breakdown current of the target device is obtained; based on the soft breakdown current, current step, and device parameters, the simulated voltage of the target device is solved. The breakdown voltage simulation method of the device provided by the present invention is divided into two simulation stages according to the soft breakdown current, as the soft breakdown current is the current at which the device begins to experience breakdown. The first stage is the stage in which the test voltage grows steadily, and the second stage is the stage in which the simulated current begins to grow exponentially. In the stage of stable test voltage growth, the simulation current of the target device is solved according to the initial test voltage, voltage step and device parameters. Since the test voltage growth trend of the device is stable, a larger voltage step threshold can be set, which reduces the number of repeated iterations in the simulation current solution process. There is no need to spend a lot of time to repeatedly iterate the simulation voltage solution process, which improves the convergence of the simulation current solution and can quickly complete the simulation current solution, thereby improving the simulation current solution speed. When it is determined that the simulation current growth trend of the target device meets the preset conditions, that is, the simulation current is in the exponential growth stage, the second stage of the device breakdown voltage simulation is entered, and the target is solved according to the soft breakdown current, current step and device parameters. The simulation voltage of the device; in the process of solving the simulation voltage, since the growth trend of the simulation current is exponential, a smaller current step threshold can be set for the current step, which reduces the number of repeated iterations in the process of solving the simulation voltage. There is no need to spend a lot of time to repeatedly iterate the solution process of the simulation current, which improves the convergence of the simulation voltage solution and can quickly complete the solution of the simulation voltage, thereby improving the solution speed of the simulation voltage. That is, different step thresholds can be set for the two simulation stages, and the step threshold is no longer global, thereby realizing efficient utilization of simulation resources in each simulation stage, thereby realizing efficient utilization of simulation resources for the breakdown voltage simulation of the entire device, and improving the breakdown voltage simulation speed of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0021] Figure 1 This is a flow chart of a method for simulating the breakdown voltage of a device provided by an embodiment of the present invention;

[0022] Figure 2is another flow chart of the method for simulating the breakdown voltage of a device provided by an embodiment of the present invention;

[0023] Figure 3 1 is a schematic structural diagram of a simulated PN junction provided by an embodiment of the present invention;

[0024] Figure 4 is a schematic diagram of a breakdown voltage simulation curve of a device provided by an embodiment of the present invention;

[0025] Figure 5 is another schematic diagram of a breakdown voltage simulation curve of a device provided by an embodiment of the present invention;

[0026] Figure 6 This is a structural diagram of a device breakdown voltage simulation apparatus provided by an embodiment of the present invention;

[0027] Figure 7 It is a schematic diagram of the structure of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0029] The terms "including" and "having" and any variations thereof in the description and claims of the present invention and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatus.

[0030] The following specific embodiments are used to describe the technical solution of the present invention in detail. The following specific embodiments can be combined with each other, and the same or similar concepts or processes may not be described in detail in some embodiments.

[0031] Figure 1 The present invention provides a flowchart of a method for simulating the breakdown voltage of a device. The method can be performed by a device for simulating the breakdown voltage of the device, which can be implemented in software and / or hardware. In a specific embodiment, the device can be integrated into an electronic device, such as a computer, a server, etc. The following embodiments will be described using the device integrated into an electronic device as an example. Figure 1, the method may specifically include the following steps:

[0032] Step 101: Obtain the initial test voltage, voltage step, current step, and device parameters of the target device.

[0033] The term "device" can be understood as a simulated semiconductor device obtained by device simulation using simulation software. For example, the simulated semiconductor device can be a simulated PN junction or a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The target device is the device for which breakdown voltage simulation is to be performed. If the target device is a PN junction, the P region of the PN junction is negative and the N region is positive.

[0034] The initial test voltage is the voltage applied to the target device for the first time, such as the test voltage applied to the target device for the first time during the device simulation test. The voltage step size is the increment of the test voltage change of the target device during the breakdown voltage simulation process. The current step size is the increment of the simulated current change of the target device during the breakdown voltage simulation process. Device parameters are various parameters, classification values ​​and quality indicators used to describe the electrical performance indicators of semiconductor devices. Device parameters may include but are not limited to one or more of the electron current density, hole current density, electron net recombination rate, hole net recombination rate, electron net generation rate, hole net generation rate, electron charge, ferroelectric polarization, electron density, hole density, ionized donor concentration, ionized acceptor concentration, charge density contributed by traps and fixed charges and the potential of the target device.

[0035] Step 102 : Calculate the simulated current of the target device according to the initial test voltage, voltage step size, and device parameters.

[0036] The simulated current is the current of the target device obtained through simulation based on the test voltage, voltage step and device parameters of the target device.

[0037] In this embodiment, after the initial test voltage, voltage step length, and device parameters are obtained, the initial test voltage can be adjusted by the voltage step length, and the target device simulation current can be calculated in combination with the device parameters of the target device.

[0038] In an optional embodiment, a target voltage can be obtained based on the initial test voltage and the voltage step; the simulation current of the target device can be solved according to the target voltage and device parameters; it is determined whether the growth trend of the simulation current meets the preset conditions; when it is determined that the growth trend of the simulation current does not meet the preset conditions, the voltage step is updated, and the target voltage is determined based on the initial test voltage and the updated voltage step until the growth trend of the simulation current meets the preset conditions.

[0039] The preset condition can be understood as the simulation current showing an exponential growth trend, such as a growth trend of two orders of magnitude (100).

[0040] In this embodiment, determining whether the growth trend of the simulation current meets the preset conditions can specifically be determining whether the growth trend of the simulation current is an exponential growth trend, such as determining whether the ratio of the simulation current 1 currently solved to the simulation current 2 previously solved is greater than or equal to 100 (two orders of magnitude).

[0041] In this embodiment, if the ratio is greater than or equal to 100, it is determined that the growth trend of the simulated current meets the preset condition; if the ratio is less than or equal to 100, it is determined that the growth trend of the simulated current does not meet the preset condition.

[0042] Those skilled in the art will understand that the above is only an example. In other embodiments, the preset condition may also be other conditions, such as 1 order of magnitude (10), or a larger order of magnitude, etc. This application does not impose any restrictions on this.

[0043] In the above embodiment, the simulation current of the target device is solved according to the initial test voltage, voltage step and device parameters during the stable growth stage of the initial test voltage. Since the growth trend of the test voltage of the target device is stable, a larger voltage step threshold can be set, that is, the first stage is to solve the slower growing simulation current based on the slower growing simulation voltage, which reduces the number of repeated iterations in the simulation current solution process, eliminates the need to spend more time on repeated iterations of the simulation voltage solution process, improves the convergence of the simulation current solution, and can quickly complete the simulation current solution, thereby improving the simulation current solution speed.

[0044] In one embodiment, updating the voltage step size may include: obtaining a voltage step size update coefficient; and obtaining an updated voltage step size based on the voltage step size update coefficient and the voltage step size.

[0045] The voltage step length update coefficient may be a preset coefficient used to adjust the voltage step length.

[0046] In this embodiment, the updated voltage step size can be obtained by multiplying the voltage step size update coefficient and the voltage step size.

[0047] In other embodiments, a correspondence between voltage step lengths and voltage step length update coefficients may be pre-established to form a data table. When updating the voltage step length, the corresponding voltage step length is obtained from the data table using the voltage step length update coefficient, and the previously obtained voltage step length is used to replace the previous voltage step length, thereby updating the voltage step length.

[0048] In another embodiment, different voltage step size update coefficients may correspond to different voltage step size increments. The corresponding voltage step size increment may be obtained based on the voltage step size update coefficient, and then the voltage step size increment may be added to the voltage step size to update the voltage step size to obtain an updated voltage step size.

[0049] In one embodiment, obtaining the target voltage based on the initial test voltage and the voltage step size may include: adding the initial test voltage and the voltage step size to obtain the target voltage.

[0050] Step 103 : When it is determined that the simulation current growth trend of the target device meets a preset condition, a soft breakdown current of the target device is obtained.

[0051] The soft breakdown current can be understood as the current at which the target device begins to experience breakdown.

[0052] When using the quasi-static scanning method to simulate the breakdown voltage of a device, in order to prevent the simulation current solution after the simulation device is broken down by voltage from being stopped due to the voltage step threshold being too large, it is necessary to set a very small voltage step threshold. The voltage step threshold is global, that is, a very small voltage step threshold needs to be set in both solution stages. For the simulation current solution before the simulation device is broken down by voltage, this will result in repeated iterative solutions for the simulation current solution before the simulation device is broken down by voltage, resulting in a serious waste of simulation resources. Therefore, in order to avoid serious waste of simulation resources before the target device is broken down by voltage, in an optional embodiment, the simulation current can be compared with the previous simulation current to determine the growth trend of the simulation current. When it is determined that the growth trend of the simulation current is an exponential growth trend, it is determined that the growth trend of the simulation current meets the preset conditions, and step 104 is executed, that is, according to the soft breakdown current, the breakdown voltage simulation of the target device is divided into two simulation stages before and after the target device is broken down by voltage. Different simulation stages use different step thresholds to avoid the problem of setting a very small voltage step threshold for the breakdown voltage simulation process of the entire device in order to improve the simulation convergence after the target device is broken down by voltage, resulting in serious waste of simulation resources before the target device is broken down by voltage. When it is determined that the growth trend of the simulation current does not meet the preset conditions, return to step 102.

[0053] Step 104 : Calculate the simulation voltage of the target device according to the soft breakdown current, the current step size, and the device parameters.

[0054] In an optional embodiment, the target current can be determined based on the soft breakdown current and the current step; when the target current is less than the preset current, the simulation voltage of the target device is solved based on the target current, the current step and the device parameters; when the target current is equal to the preset current, the simulation voltage of the target device is stopped.

[0055] In one embodiment, solving the simulation voltage of the target device based on the target current, current step and device parameters can include: determining whether the current step is greater than the preset step; when the current step is greater than the preset step, updating the current step, and solving the simulation voltage of the target device based on the soft breakdown current, the updated current step and the device parameters; when the current step is less than or equal to the preset step, updating the soft breakdown current, and solving the simulation voltage of the target device based on the current step, the device parameters and the updated soft breakdown current.

[0056] In one embodiment, updating the soft breakdown current may include: obtaining a current update coefficient; obtaining an updated soft breakdown current based on the current update coefficient and the soft breakdown current, so that the soft breakdown current can be reduced in time to reduce the number of iterations in the process of solving the simulation voltage, thereby improving the solution speed of the simulation voltage.

[0057] The current update coefficient may be a preset coefficient used to adjust the soft breakdown current.

[0058] Specifically, the current update coefficient and the soft breakdown current may be multiplied to obtain the updated soft breakdown current.

[0059] In other embodiments, a correspondence between the soft breakdown current and the current update coefficient may be pre-established to form a data table. When updating the soft breakdown current, the corresponding soft breakdown current is obtained from the data table using the current update coefficient, and the previous soft breakdown current is replaced with the obtained soft breakdown current to achieve the update of the soft breakdown current.

[0060] In one embodiment, updating the current step size may include: obtaining a current step size update coefficient; obtaining an updated current step size based on the current step size update coefficient and the current step size, so that the target current can be reduced in time to reduce the number of iterations in the process of solving the simulation voltage, thereby improving the solution speed of the simulation voltage.

[0061] The current step length update coefficient may be a preset coefficient used to adjust the current step length.

[0062] Specifically, the current step length update coefficient and the current step length may be multiplied to obtain an updated current step length.

[0063] In other embodiments, a correspondence between current step sizes and current step size update coefficients may be pre-established to form a data table. When updating the current step size, the corresponding current step size is obtained from the data table using the current step size update coefficient, and the previous current step size is replaced with the obtained current step size to achieve the update of the current step size.

[0064] In another embodiment, different current step size update coefficients may correspond to different current step size increments. The corresponding current step size increment may be obtained based on the current step size update coefficient, and then the current step size increment may be added to the current step size to update the current step size, thereby obtaining an updated current step size.

[0065] Those skilled in the art will appreciate that the above-mentioned update of the soft breakdown current and the current step size is merely an example, and in other embodiments, the update may be performed by other processing methods, such as addition.

[0066] In the embodiment of the present invention, since the soft breakdown current is the current at which the target device begins to experience breakdown, the breakdown voltage simulation of the device is divided into two simulation stages according to the soft breakdown current. The first stage is the stage where the test voltage grows steadily, and the second stage is the stage where the simulation current begins to grow exponentially. In the stage where the test voltage grows steadily, the simulation current of the target device is solved according to the initial test voltage, the voltage step size and the device parameters. Since the growth trend of the test voltage of the target device is stable, a larger voltage step size threshold can be set, which reduces the number of repeated iterations in the simulation current solution process. There is no need to spend a lot of time on the repeated iteration of the simulation voltage solution process, which improves the convergence of the simulation current solution and can quickly complete the simulation current solution, thereby improving the simulation current solution speed. When it is determined that the simulation current growth trend of the target device meets the preset conditions, that is, the simulation current is in the exponential growth stage, the second stage of the breakdown voltage simulation of the device is entered, and the target device is solved according to the soft breakdown current, the current step size and the device parameters. The simulation voltage of the standard device is obtained; in the process of solving the simulation voltage, since the growth trend of the simulation current is exponential, a smaller current step threshold can be set for the current step, which reduces the number of repeated iterations in the process of solving the simulation voltage. There is no need to spend a lot of time to repeatedly iterate the solution process of the simulation current, which improves the convergence of the simulation voltage solution and can quickly complete the solution of the simulation voltage, thereby improving the solution speed of the simulation voltage. That is, different step thresholds can be set for the two simulation stages, and the step threshold is no longer global, thereby realizing efficient utilization of simulation resources in each simulation stage, thereby realizing efficient utilization of simulation resources for the breakdown voltage simulation of the entire device and improving the breakdown voltage simulation speed of the device.

[0067] The following further describes the device breakdown voltage simulation method provided by the embodiment of the present invention. Figure 2 As shown, Figure 2 FIG. 5 is another flow chart of a method for simulating the breakdown voltage of a device provided by an embodiment of the present invention, which may specifically include the following steps:

[0068] Step 201 : Obtain the initial test voltage, voltage step, current step, and device parameters of the target device.

[0069] Step 202: Obtain a target voltage based on the initial test voltage and the voltage step size.

[0070] For example, the initial test voltage is V, the voltage step size is VD, and the target voltage V'=V+D.

[0071] Step 203: Calculate the simulated current of the target device according to the target voltage and device parameters.

[0072] Among them, the device parameters may include but are not limited to one or more of the electron current density, hole current density, electron net recombination rate, hole net recombination rate, electron net generation rate, hole net generation rate, electron charge, ferroelectric polarization, electron density, hole density, ionized donor concentration, ionized acceptor concentration, charge density contributed by traps and fixed charges, and the potential of the target device.

[0073] In a specific embodiment, the device parameters include electron current density, hole current density, net electron recombination rate, net hole recombination rate, net electron generation rate, net hole generation rate, electron charge, ferroelectric polarization, electron density, hole density, ionized donor concentration, ionized acceptor concentration, charge density contributed by trapped and fixed charges, and the potential of the target device.

[0074] In an optional embodiment, the potential of the target device can be determined based on the target voltage, and the electron current density, hole current density, electron net recombination rate, hole net recombination rate, electron net generation rate, hole net generation rate, electron charge, ferroelectric polarization, electron density, hole density, ionized donor concentration, ionized acceptor concentration, charge density contributed by traps and fixed charges, and the potential of the target device are substituted into the simulation parameter solution equation to solve the electron current density and hole current density of the target device, and finally the electron current density and hole current density are added to obtain the simulated current. The simulation parameter solution equation is as follows:

[0075]

[0076] Among them, J n represents the electron current density, J prepresents the hole current density, R net,n represents the net recombination rate of electrons, R net,p represents the net recombination rate of holes, G net,n represents the net generation rate of electrons, G net,p represents the net hole generation rate, t represents time, q represents electron charge, ε represents electrical permittivity, P represents ferroelectric polarization, n represents electron density, p represents hole density, ND represents ionized donor concentration, NA represents ionized acceptor concentration, ρ×trap represents the charge density contributed by traps and fixed charges, Indicates the potential of the target device.

[0077] Step 204 , determining whether the growth trend of the simulated current meets a preset condition, if so, executing step 206 ; if not, executing step 205 .

[0078] Step 205 : Update the voltage step size, and determine the target voltage based on the initial test voltage and the updated voltage step size.

[0079] After executing step 205 , the process returns to executing step 203 .

[0080] Step 206: Determine the simulated current as the soft breakdown current.

[0081] Step 207 : determining a target current according to the soft breakdown current and the current step size.

[0082] In an optional implementation, the soft breakdown current may be added to the current step size to obtain the target current.

[0083] For example, the soft breakdown current is CI, the current step size is ID, and the target current I′=CI+ID.

[0084] Step 208 , determining whether the target current is less than a preset current, if so, executing step 209 ; if not, executing step 210 .

[0085] In an embodiment of the present invention, it is possible to determine whether the breakdown voltage simulation of the device has converged by determining whether the target current is equal to the preset current, and then stop solving the simulation voltage of the target device when it is determined that the breakdown voltage simulation of the device has converged, so as to avoid continuing to solve the simulation voltage of the target device when the breakdown voltage simulation of the device has converged, thereby avoiding the waste of simulation resources and improving the utilization of simulation resources.

[0086] Step 209 : Calculate the simulated voltage of the target device according to the target current, current step size, and device parameters.

[0087] In an optional embodiment, it can be determined whether the current step size is greater than the preset step size; when the current step size is greater than the preset step size, the current step size is updated, and the simulation voltage of the target device is solved based on the target current, the updated current step size and the device parameters; when the current step size is less than or equal to the preset step size, the soft breakdown current is updated, and the simulation voltage of the target device is solved based on the current step size, the device parameters and the updated soft breakdown current.

[0088] In this embodiment, it is determined whether the current step size is greater than the preset step size, so as to update the target current, and then solve the simulation voltage according to the target current and the soft breakdown current.

[0089] In a specific embodiment, the device parameters include electron current density, hole current density, net electron recombination rate, net hole recombination rate, net electron generation rate, net hole generation rate, electron charge, ferroelectric polarization, electron density, hole density, ionized donor concentration, ionized acceptor concentration, charge density contributed by trapped and fixed charges, and the potential of the target device.

[0090] In an optional embodiment, the electron current density and hole current density of the target device can be determined based on the target current, and the electron current density, hole current density, net electron recombination rate, net hole recombination rate, net electron generation rate, net hole generation rate, electron charge, ferroelectric polarization, electron density, hole density, ionized donor concentration, ionized acceptor concentration, charge density contributed by traps and fixed charges, and the potential of the target device are substituted into the above simulation parameter solution equation to solve the potential of the target device, and then the simulation voltage of the target device is determined based on the potential of the target device.

[0091] Step 210: Stop calculating the simulated voltage of the target device.

[0092] In an embodiment of the present invention, in the stage of steady growth of the test voltage, the simulation current of the target device is solved according to the initial test voltage, the voltage step and the device parameters. Since the growth trend of the test voltage of the target device is stable, a larger voltage step threshold can be set, which reduces the number of repeated iterations in the simulation current solution process. There is no need to spend a lot of time on the repeated iteration of the simulation voltage solution process, which improves the convergence of the simulation current solution and can quickly complete the simulation current solution, thereby improving the simulation current solution speed. When it is determined that the simulation current growth trend of the target device meets the preset conditions, that is, the simulation current is in the exponential growth stage, the second stage of the breakdown voltage simulation of the device is entered, and the soft breakdown current, current step and device parameters are used to simulate the target device. , solve the simulation voltage of the target device; in the process of solving the simulation voltage, since the growth trend of the simulation current is exponential, a smaller current step threshold can be set for the current step, which reduces the number of repeated iterations in the process of solving the simulation voltage. There is no need to spend a lot of time to repeatedly iterate the solution process of the simulation current, which improves the convergence of the simulation voltage solution and can quickly complete the solution of the simulation voltage, thereby improving the solution speed of the simulation voltage. That is, different step thresholds can be set for the two simulation stages, and the step threshold is no longer global, thereby realizing efficient utilization of simulation resources in each simulation stage, thereby realizing efficient utilization of simulation resources for the breakdown voltage simulation of the entire device and improving the breakdown voltage simulation speed of the device.

[0093] In some embodiments, after stopping solving the simulated voltage of the target device, a breakdown voltage simulation curve of the target device may be generated according to the simulated voltage and the simulated current, so that the breakdown voltage of the target device can be determined according to the breakdown voltage simulation curve.

[0094] Specifically, the inflection point in the breakdown voltage simulation curve is determined as the breakdown voltage of the target device.

[0095] For example, Figure 3 This is a schematic diagram of the structure of a target device (simulated PN junction) obtained by device simulation using simulation software according to an embodiment of the present invention. Figure 3 In the figure, the X-axis and Y-axis represent the size of the target device in μm. Figure 3 The simulated PN junction shown uses a quasi-static voltage sweep method to simulate the breakdown voltage of the PN junction, and the simulated voltage and simulated current of the simulated PN junction can be obtained. Figure 4 The breakdown voltage simulation curve shown is Figure 4 Current in the table represents the simulated current, and Voltage represents the simulated voltage. Figure 4 It can be seen that at the inflection point ①, the simulation of the breakdown voltage of the PN junction does not converge and the simulation stops. Figure 3The simulated PN junction shown in the figure adopts the breakdown voltage simulation method of the device provided in the embodiment of the present invention, and the simulated voltage and simulated current of the simulated PN junction can be obtained. Figure 5 The breakdown voltage simulation curve shown is Figure 5 Current in the table represents the simulated current, and Voltage represents the simulated voltage. Figure 5 It can be seen that the inflection point ② is the breakdown voltage of the simulated PN junction. After the inflection point ②, the breakdown voltage simulation of the simulated PN junction converges and a complete breakdown voltage simulation curve is obtained.

[0096] Figure 6 FIG. 1 is a schematic structural diagram of a device for simulating the breakdown voltage of a device according to an embodiment of the present invention. The device is suitable for executing a method for simulating the breakdown voltage of a device according to an embodiment of the present invention. Figure 6 As shown, the device may specifically include:

[0097] Parameter acquisition module 301, used to obtain the initial test voltage, voltage step, current step and device parameters of the target device;

[0098] A current solving module 302 is configured to solve the simulated current of the target device according to the initial test voltage, the voltage step size, and the device parameters;

[0099] A trend determination module 303 is configured to obtain a soft breakdown current of the target device when it is determined that the simulated current growth trend of the target device meets a preset condition;

[0100] The voltage solving module 304 is configured to solve the simulation voltage of the target device according to the soft breakdown current, the current step size, and the device parameters.

[0101] Optionally, the voltage solving module 304 is specifically configured to:

[0102] determining a target current according to the soft breakdown current and the current step size;

[0103] When the target current is less than a preset current, solving the simulation voltage of the target device according to the target current, the current step size and the device parameters;

[0104] When the target current is equal to the preset current, the simulation voltage of the target device is stopped.

[0105] Optionally, the voltage solving module 304,

[0106] Solving the simulation voltage of the target device according to the target current, the current step size, and the device parameters, including:

[0107] Determining whether the current step length is greater than a preset step length;

[0108] When the current step size is greater than the preset step size, updating the current step size, and solving the simulation voltage of the target device according to the target current, the updated current step size and the device parameters;

[0109] When the current step size is less than or equal to the preset step size, the soft breakdown current is updated, and the simulation voltage of the target device is solved according to the current step size, the device parameters, and the updated soft breakdown current.

[0110] Optionally, the voltage solving module 304 updates the soft breakdown current, including:

[0111] Get the current update coefficient;

[0112] Obtaining an updated soft breakdown current based on the current update coefficient and the soft breakdown current;

[0113] The updating of the current step size includes:

[0114] Get the current step update coefficient;

[0115] An updated current step size is obtained based on the current step size update coefficient and the current step size.

[0116] Furthermore, the device also includes a curve generating module, which is used to:

[0117] A breakdown voltage simulation curve of the target device is generated according to the simulation voltage and the simulation current.

[0118] Optionally, the current solving module 302 is specifically configured to:

[0119] Obtaining a target voltage based on the initial test voltage and the voltage step size;

[0120] Calculating a simulated current of the target device according to the target voltage and the device parameters;

[0121] Determining whether the growth trend of the simulated current meets a preset condition;

[0122] When it is determined that the growth trend of the emulated current does not meet the preset condition, the voltage step size is updated, and a target voltage is determined based on the initial test voltage and the updated voltage step size until the growth trend of the emulated current meets the preset condition.

[0123] Optionally, the current solving module 302 updates the voltage step size, including:

[0124] Get the voltage step update coefficient;

[0125] An updated voltage step size is obtained based on the voltage step size update coefficient and the voltage step size.

[0126] Those skilled in the art will clearly understand that for the sake of convenience and brevity of description, only the division of the above-mentioned functional modules is used as an example for illustration. In actual applications, the above-mentioned functions can be assigned to different functional modules as needed, that is, the internal structure of the device can be divided into different functional modules to complete all or part of the functions described above. The specific working process of the functional modules described above can refer to the corresponding process in the aforementioned method embodiment and will not be repeated here.

[0127] The device breakdown voltage simulation apparatus provided by the embodiment of the present invention solves the simulation current of the target device according to the initial test voltage, voltage step and device parameters in the stable test voltage growth stage. Since the test voltage growth trend of the device is stable, a larger voltage step threshold can be set, which reduces the number of repeated iterations in the simulation current solution process. There is no need to spend a lot of time on the repeated iteration of the simulation voltage solution process, which improves the convergence of the simulation current solution and can quickly complete the simulation current solution, thereby improving the simulation current solution speed. When it is determined that the simulation current growth trend of the target device meets the preset conditions, that is, the simulation current is in the exponential growth stage, the second stage of the breakdown voltage simulation of the device is entered, and the simulation current is calculated according to the soft breakdown current, current step and so on. length and device parameters to solve the simulation voltage of the target device; in the process of solving the simulation voltage, since the growth trend of the simulation current is exponential, a smaller current step threshold can be set for the current step, which reduces the number of repeated iterations in the process of solving the simulation voltage. There is no need to spend a lot of time to repeatedly iterate the solution process of the simulation current, which improves the convergence of the simulation voltage solution and can quickly complete the solution of the simulation voltage, thereby improving the solution speed of the simulation voltage. That is, different step thresholds can be set for the two simulation stages, and the step threshold is no longer global, thereby realizing efficient utilization of simulation resources in each simulation stage, thereby realizing efficient utilization of simulation resources for the breakdown voltage simulation of the entire device and improving the breakdown voltage simulation speed of the device.

[0128] In one embodiment, an electronic device is provided, which may be a server. Figure 7 It is a schematic diagram of the structure of an electronic device provided by an embodiment of the present invention.

[0129] Please refer to Figure 7 , provides an electronic device 50, including:

[0130] processor 51; and

[0131] a memory 52 for storing executable instructions of the processor;

[0132] The processor 51 is configured to execute the above-mentioned method by executing the executable instructions.

[0133] The processor 51 can communicate with the memory 52 via a bus 53 .

[0134] The processor of the electronic device is used to provide computing and control capabilities. The memory of the electronic device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, programs, and a database. The internal memory provides an environment for the operation of the operating system and programs in the non-volatile storage medium. The database of the electronic device is used to store data such as the soft breakdown current, initial test voltage, voltage step size, device parameters, simulation voltage, simulation current, and current step size of the target device. When the program is executed by the processor, it implements the breakdown voltage simulation method of the device described above.

[0135] An embodiment of the present invention further provides a computer-readable storage medium having a computer program stored thereon, which implements the above-mentioned method when executed by a processor.

[0136] Those skilled in the art will understand that all or part of the processes in the above-mentioned embodiment methods can be implemented by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application may include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), Synchronous Link DRAM (SLDRAM), Rambus direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.

[0137] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for simulating the breakdown voltage of a device, characterized in that: The method comprises: Obtain the initial test voltage, voltage step, current step, and device parameters of the target device; Solving the simulated current of the target device according to the initial test voltage, the voltage step and the device parameters, including: obtaining a target voltage based on the initial test voltage and the voltage step; solving the simulated current of the target device according to the target voltage and the device parameters; judging whether the growth trend of the simulated current meets a preset condition; when it is determined that the growth trend of the simulated current does not meet the preset condition, updating the voltage step, and determining the target voltage based on the initial test voltage and the updated voltage step until the growth trend of the simulated current meets the preset condition; When it is determined that the simulated current growth trend of the target device meets a preset condition, obtaining the soft breakdown current of the target device; A simulation voltage of the target device is calculated based on the soft breakdown current, the current step size, and the device parameters.

2. The method according to claim 1, characterized in that The step of solving the simulation voltage of the target device according to the soft breakdown current, the current step size, and the device parameters includes: determining a target current according to the soft breakdown current and the current step size; When the target current is less than a preset current, solving the simulation voltage of the target device according to the target current, the current step size and the device parameters; When the target current is equal to the preset current, the simulation voltage of the target device is stopped.

3. The method according to claim 2, characterized in that The step of solving the simulation voltage of the target device according to the target current, the current step size, and the device parameters includes: Determining whether the current step length is greater than a preset step length; When the current step size is greater than the preset step size, updating the current step size, and solving the simulation voltage of the target device according to the target current, the updated current step size and the device parameters; When the current step size is less than or equal to the preset step size, the soft breakdown current is updated, and the simulation voltage of the target device is solved according to the current step size, the device parameters, and the updated soft breakdown current.

4. The method according to claim 3, characterized in that The updating of the soft breakdown current includes: Get the current update coefficient; Obtaining an updated soft breakdown current based on the current update coefficient and the soft breakdown current; The updating of the current step size includes: Get the current step update coefficient; An updated current step size is obtained based on the current step size update coefficient and the current step size.

5. The method according to claim 2, characterized in that After stopping solving the simulation voltage of the target device, the method further includes: A breakdown voltage simulation curve of the target device is generated according to the simulation voltage and the simulation current.

6. The method according to claim 1, characterized in that The updating of the voltage step size includes: Get the voltage step update coefficient; An updated voltage step size is obtained based on the voltage step size update coefficient and the voltage step size.

7. A device for simulating breakdown voltage of a device, characterized in that: The device comprises: A parameter acquisition module is used to obtain the initial test voltage, voltage step, current step and device parameters of the target device; A current solving module, configured to solve the simulated current of the target device based on the initial test voltage, the voltage step length, and the device parameters, comprising: obtaining a target voltage based on the initial test voltage and the voltage step length; solving the simulated current of the target device based on the target voltage and the device parameters; determining whether a growth trend of the simulated current meets a preset condition; and when it is determined that the growth trend of the simulated current does not meet the preset condition, updating the voltage step length, and determining the target voltage based on the initial test voltage and the updated voltage step length, until the growth trend of the simulated current meets the preset condition; A trend determination module, configured to obtain a soft breakdown current of the target device when it is determined that the simulated current growth trend of the target device meets a preset condition; A voltage solving module is used to solve the simulation voltage of the target device according to the soft breakdown current, the current step size and the device parameters.

8. The device according to claim 7, characterized in that The voltage solving module is used to solve the simulation voltage of the target device according to the soft breakdown current, the current step size and the device parameters, including: determining a target current according to the soft breakdown current and the current step size; When the target current is less than a preset current, solving the simulation voltage of the target device according to the target current, the current step size and the device parameters; When the target current is equal to the preset current, the simulation voltage of the target device is stopped.

9. An electronic device, characterized in that: Including processor and memory, The memory is used to store code and related data; The processor is configured to execute the code in the memory to implement the breakdown voltage simulation method of the device according to any one of claims 1 to 6.

10. A storage medium storing a computer program, wherein when the program is executed by a processor, the method for simulating the breakdown voltage of a device according to any one of claims 1 to 6 is implemented.

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