Film parameter determination method and device and storage medium

Abstract

The invention provides a thin film parameter determination method, a thin film parameter determination device and a computer readable storage medium. The film parameter determination method comprises the following steps: acquiring a plurality of process parameters of a dehydrogenation treatment process; the plurality of process parameters at least comprise processing temperature, plasma power and processing time; and inputting the process parameters into a pre-established hydrogen content model so as to jointly determine the hydrogen distribution and the total amount of hydrogen in the thin film through a hydrogen atom activation diffusion unit, a hydrogen atom and defect interaction unit and a hydrogen atom recombination and desorption unit of the hydrogen content model. According to the method, the multiple process parameters of the dehydrogenation treatment process can be input into the pre-established hydrogen content model, so that the hydrogen distribution and the total hydrogen amount in the thin film can be accurately determined, and theoretical guidance can be provided for optimization of the process parameters of the dehydrogenation treatment process.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device processing, and in particular to a method for determining film parameters, a device for determining film parameters, and a computer-readable storage medium. Background Art

[0002] The hydrogen content has a significant effect on the film structure, dielectric constant, corrosion rate, stress, refractive index, moisture resistance, scratch resistance and other properties of semiconductor thin film materials. In the prior art, it is usually necessary to undergo a dehydrogenation process (e.g., plasma treatment, UV post-treatment) to reduce the hydrogen content inside the film to increase the tensile stress of the film. At present, the methods for determining the hydrogen content in the film material after the dehydrogenation process mainly include experimental methods such as infrared transmission spectroscopy, nuclear spectrum reaction analysis technology, particle scattering, secondary ion mass spectrometry, etc., which are used to preliminarily estimate the hydrogen content in the film material. However, the above experimental methods still have challenges in terms of accuracy, repeatability and irreversibility. Therefore, since there is no effective theoretical method for evaluating the hydrogen content and hydrogen distribution in the film material, it is impossible to accurately determine the hydrogen content and hydrogen distribution in the film material, resulting in the inability to guide the process parameters of the dehydrogenation process with theoretical methods at present, so as to find the best combination of process parameters, thereby improving the dehydrogenation effect of the dehydrogenation process.

[0003] In order to overcome the above-mentioned defects of the prior art, the art urgently needs an improved method for determining film parameters for accurately determining the hydrogen distribution and total hydrogen amount in the film, and for providing theoretical guidance for optimizing the process parameters of the dehydrogenation treatment process. Summary of the invention

[0004] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0005] In order to overcome the above-mentioned defects of the prior art, the present invention provides a method for determining film parameters, a device for determining film parameters and a computer-readable storage medium, which can be used to accurately determine the hydrogen distribution and the total amount of hydrogen in the film by inputting multiple process parameters of the dehydrogenation treatment process into a pre-established hydrogen content model, and to provide theoretical guidance for the optimization of process parameters of the dehydrogenation treatment process.

[0006] Specifically, the method for determining the film parameters provided in accordance with the first aspect of the present invention comprises the following steps: obtaining multiple process parameters of the dehydrogenation process. The multiple process parameters include at least the process temperature, plasma power and process time; and inputting each of the process parameters into a pre-established hydrogen content model to jointly determine the hydrogen distribution and the total amount of hydrogen in the film through the hydrogen atom activation diffusion unit, the hydrogen atom and defect interaction unit and the hydrogen atom recombination and desorption unit of the hydrogen content model.

[0007] Further, in some embodiments of the present invention, the hydrogen atom activation diffusion unit is represented as:

[0008]

[0009] Among them, C H is the volume density of hydrogen atoms in the form of gaps. D is the diffusion coefficient of the hydrogen atoms in the film. a0 is the minimum unit cell size in the film. is the intrinsic defect number density of hydrogen trapped in the film. t is the remaining defect density that is not occupied in the film. b is the vacancy defect density in the film. Hdtrap k is the ability of the defect to capture the hydrogen atom. b is the Boltzmann constant. T is the processing temperature.

[0010] Further, in some embodiments of the present invention, the interaction unit of the hydrogen atom and the defect is expressed as:

[0011]

[0012] Among them, C H is the volume density of hydrogen atoms in the form of gaps. D is the diffusion coefficient of the hydrogen atoms in the film. a0 is the minimum unit cell size in the film. is the intrinsic defect number density of hydrogen trapped in the film. t is the remaining defect density that is not occupied in the film. b is the vacancy defect density in the film. Hdtrap k is the ability of the defect to capture the hydrogen atom. b is the Boltzmann constant. T is the processing temperature.

[0013] Further, in some embodiments of the present invention, the hydrogen atom recombination and desorption unit is represented as:

[0014]

[0015] Among them, CH|O is the density of the hydrogen atoms in the surface layer of the film. L0 is the unit depth of the surface layer. D is the diffusion coefficient of the hydrogen atoms in the film. H is the volume density of hydrogen atoms existing in interstitial form. K H is the release rate of the hydrogen atoms on the surface of the film.

[0016] Furthermore, in some embodiments of the present invention, the release rate K of the surface of the film material is H is represented as:

[0017]

[0018] Among them, K r K is the number of hydrogen atoms that are combined on the surface. c is the dissociation rate.

[0019] Further, in some embodiments of the present invention, the step of determining the total amount of hydrogen in the film includes: determining the total amount N of hydrogen atoms captured by the defects during the processing time. tH :

[0020]

[0021] Among them, C tH is the volume density of hydrogen atoms captured by defects. t is the processing time; and according to the total captured amount N tH , determine the total amount of hydrogen N in the film material H :

[0022]

[0023] Among them, C H is the volume density of hydrogen atoms existing in the form of interstitials.

[0024] Furthermore, in some embodiments of the present invention, the step of adjusting the process parameters according to the hydrogen distribution and the total amount of hydrogen to determine the optimal parameter combination for the dehydrogenation treatment process includes: determining one of the treatment temperature, the treatment time and the plasma power as the process parameter to be measured, and determining the other two of the treatment temperature, the treatment time and the plasma power as preset process parameters; and adjusting the process parameters to be measured within a preset parameter adjustment range to determine the optimal parameter combination for the dehydrogenation treatment process.

[0025] Furthermore, in some embodiments of the present invention, the step of determining one of the processing temperature, the processing time and the plasma power as the process parameter to be measured, and determining the other two of the processing temperature, the processing time and the plasma power as preset process parameters also includes: determining the processing temperature as the process parameter to be measured, and determining the processing time and the plasma power as preset process parameters; or determining the processing time as the process parameter to be measured, and determining the processing temperature and the plasma power as preset process parameters; or determining the plasma power as the process parameter to be measured, and determining the processing temperature and the processing time as preset process parameters.

[0026] In addition, the above-mentioned device for determining film parameters provided according to the second aspect of the present invention includes a memory and a processor. The memory stores computer instructions. The processor is connected to the memory and is configured to execute the computer instructions stored thereon to implement the method for determining film parameters provided by the first aspect of the present invention.

[0027] In addition, the above-mentioned computer-readable storage medium provided according to the third aspect of the present invention stores computer instructions thereon, and is characterized in that when the computer instructions are executed by a processor, the method for determining film parameters provided by the first aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0029] Figure 1 A schematic flow chart of a method for determining film parameters according to some embodiments of the present invention is shown.

[0030] Figure 2 A graph showing the variation of hydrogen content with depth under multiple processing temperature conditions provided according to some embodiments of the present invention is shown.

[0031] Figure 3 A bar graph showing the relationship between the total amount of hydrogen, time and temperature provided according to some embodiments of the present invention. DETAILED DESCRIPTION

[0032] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0033] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0034] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0035] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0036] As mentioned above, the current methods for determining the hydrogen content in the thin film material after the dehydrogenation process mainly include experimental methods such as infrared transmission spectroscopy, nuclear spectrum reaction analysis technology, particle scattering, secondary ion mass spectrometry, etc., which are used to preliminarily estimate the hydrogen content in the thin film material. However, the above experimental methods still have challenges in terms of accuracy, repeatability and irreversibility. Therefore, since there is no effective theoretical method for evaluating the hydrogen content and hydrogen distribution in the thin film material, it is impossible to accurately determine the hydrogen content and hydrogen distribution in the thin film material, resulting in the current inability to use theoretical methods to guide the process parameters of the dehydrogenation process in order to find the best combination of process parameters, thereby improving the dehydrogenation effect of the dehydrogenation process.

[0037] In order to overcome the above-mentioned defects of the prior art, the present invention provides a method for determining film parameters, a device for determining film parameters and a computer-readable storage medium, which can be used to accurately determine the hydrogen distribution and the total amount of hydrogen in the film by inputting multiple process parameters of the dehydrogenation treatment process into a pre-established hydrogen content model, and to provide theoretical guidance for the optimization of process parameters of the dehydrogenation treatment process.

[0038] In some non-limiting embodiments, the above-mentioned method for determining film parameters provided in the first aspect of the present invention can be implemented based on the above-mentioned device for determining film parameters provided in the second aspect of the present invention. Specifically, the device for determining film parameters is configured with a memory and a processor. The memory includes but is not limited to the computer-readable storage medium provided in the third aspect of the present invention, on which computer instructions are stored. The processor is connected to the memory and is configured to execute the computer instructions stored on the memory to implement the above-mentioned method for determining film parameters provided in the first aspect of the present invention.

[0039] The working principle of the above-mentioned device for determining film parameters will be described below in conjunction with some embodiments of the method for determining film parameters. Those skilled in the art will understand that the embodiments of these methods for determining film parameters are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all functions or all working modes of the device for determining film parameters. Similarly, the device for determining film parameters is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the execution subject or execution order of each step in these methods for determining film parameters.

[0040] Please refer to the reference for details Figure 1 . Figure 1 A schematic flow chart of a method for determining film parameters according to some embodiments of the present invention is shown.

[0041] like Figure 1As shown, the processor may first obtain multiple process parameters of the dehydrogenation process, wherein the multiple process parameters at least include process temperature, plasma power and process time.

[0042] Afterwards, the processor can input various process parameters into a pre-established hydrogen content model to jointly determine the hydrogen distribution and the total amount of hydrogen in the film through the hydrogen atom activation and diffusion unit, the hydrogen atom and defect interaction unit, and the hydrogen atom recombination and desorption unit of the hydrogen content model.

[0043] Here, the hydrogen distribution is the vector of the volume density of hydrogen atoms in the film with respect to the depth. The total amount of hydrogen is the integral of the volume density of hydrogen atoms in the film with respect to the depth.

[0044] Specifically, the above hydrogen atom activation diffusion unit characterizes the partial derivative of the volume density of hydrogen atoms with respect to time, which is expressed as:

[0045]

[0046] Among them, C H is the volume density of hydrogen atoms in the form of gaps, D is the diffusion coefficient of hydrogen atoms in the film, a0 is the minimum unit cell size in the film, is the intrinsic defect density of hydrogen trapped in the film, C t is the remaining unoccupied defect density in the film, C b is the vacancy defect density in the film, E Hdtrap is the ability of defects to capture hydrogen atoms, k b is the Boltzmann constant, and T is the processing temperature.

[0047] In addition, the above interaction unit between hydrogen atoms and defects characterizes the partial derivative of the residual defect density of unoccupied hydrogen atoms with respect to time, which is expressed as:

[0048]

[0049] Among them, C H is the volume density of hydrogen atoms in the form of gaps, D is the diffusion coefficient of hydrogen atoms in the film, a0 is the minimum unit cell size in the film, is the intrinsic defect density of hydrogen trapped in the film, C t is the remaining unoccupied defect density in the film, C b is the vacancy defect density in the film, E Hdtrap is the ability of defects to capture hydrogen atoms, k b is the Boltzmann constant, and T is the processing temperature.

[0050] In addition, the partial derivative of the total amount of hydrogen at the depth of the above hydrogen atom recombination and desorption unit with respect to time is expressed as:

[0051]

[0052] Among them, C H|O is the density of hydrogen atoms in the surface layer of the film. L0 is the unit depth of the surface layer, such as the thickness of an atomic layer in the film. D is the diffusion coefficient of hydrogen atoms in the film. H is the volume density of hydrogen atoms existing in interstitial form. K H is the release rate of hydrogen atoms on the film surface.

[0053] Furthermore, in some embodiments, the release rate of hydrogen atoms on the film surface is K H is represented as:

[0054]

[0055] Among them, K r is the number of hydrogen atoms that recombine on the surface, K c is the dissociation rate.

[0056] Furthermore, in the process of determining the total amount of hydrogen in the film via the above hydrogen content model, the processor may first integrate the volume density of hydrogen atoms trapped by the defects with respect to the depth to determine the total amount of hydrogen atoms trapped by the defects N during the processing time. tH :

[0057]

[0058] Among them, C tH is the volume density of hydrogen atoms trapped by defects, and t is the processing time.

[0059] The processor can then integrate the volume density of hydrogen atoms in the interstitial form with respect to depth and calculate the total trapped amount N according to tH , to determine the total amount of hydrogen N in the film material H :

[0060]

[0061] Among them, C H is the volume density of hydrogen atoms existing in the form of interstitials.

[0062] Please refer to Figure 2 and Figure 3 . Figure 2 A graph showing the variation of hydrogen content with depth under multiple processing temperature conditions provided according to some embodiments of the present invention is shown. Figure 3 A bar graph showing the relationship between the total amount of hydrogen, time and temperature provided according to some embodiments of the present invention.

[0063] In addition, in some preferred embodiments, after determining the hydrogen distribution and the total amount of hydrogen in the film, the processor may also determine one of the processing temperature, processing time and plasma power as the process parameter to be measured, and determine the other two of the processing temperature, processing time and plasma power as the preset process parameters. Afterwards, the processor may adjust the process parameter to be measured within the preset parameter adjustment range, and by observing the change trend of the hydrogen distribution and the total amount of hydrogen obtained after inputting each process parameter to be measured, determine the influence of the process parameter to be measured on the effect of the dehydrogenation process, so as to determine the optimal parameter combination for the dehydrogenation process.

[0064] Further, in Figure 2 and Figure 3 In the illustrated embodiment, the processor may determine the processing temperature as the process parameter to be measured, and may determine the processing time and the plasma power as the preset process parameters.

[0065] Specifically, the simulation temperature range is 300K to 3000K, and the processor can input the temperature values ​​to be measured in this simulation temperature range, as well as the preset processing time and plasma power into the above hydrogen content model to determine the hydrogen distribution and total amount of hydrogen in the film. Here, the hydrogen content model can comprehensively consider that the activated hydrogen atoms exist in various forms in the material, including interstitial hydrogen atoms and defective hydrogen clusters.

[0066] Afterwards, the processor can obtain the hydrogen distribution and total hydrogen amount results obtained by inputting each temperature value to be measured, and obtain the influence of the process parameter of the treatment temperature on the effect of the dehydrogenation treatment process. Figure 3 As shown, under low temperature conditions, the hydrogen diffusion rate is low, resulting in the formation of clusters, while at higher temperatures, hydrogen tends to exist in the form of single interstitial hydrogen atoms and is easy to compound into hydrogen molecules on the surface of the material and then overflow. In this way, the present invention can increase the treatment temperature of the dehydrogenation treatment process within a certain temperature range based on the above theoretical results to optimize the thermal treatment process of the thin film material, thereby reducing hydrogen retention and improving material performance.

[0067] In addition, Figure 3 In the illustrated embodiment, the processor may determine the processing time as the process parameter to be measured, and may determine the processing temperature and the plasma power as the preset process parameters.

[0068] Specifically, the simulation time range is 0s to 10000s, and the processor can input each time value to be measured in this simulation time interval, as well as the preset processing temperature and plasma power into the above hydrogen content model to determine the hydrogen distribution and total amount of hydrogen in the film.

[0069] Afterwards, the processor can obtain the effect of the process parameter of the processing time on the effect of the dehydrogenation process according to the hydrogen distribution and the total amount of hydrogen obtained by inputting each time value to be measured. Figure 3 As shown, as the post-treatment time increases, hydrogen tends to be unevenly distributed in the material. Longer post-treatment time may cause defects to capture hydrogen to form clusters, while the proportion of interstitial hydrogen atoms decreases. In this way, the present invention can appropriately shorten the treatment time of the dehydrogenation treatment process within a certain time range based on the above theoretical results to optimize the strategy of the dehydrogenation treatment process, thereby reducing hydrogen retention in the material and improving the stability of the material.

[0070] Furthermore, in some embodiments, the processor may determine the plasma power as the process parameter to be measured, and determine the processing temperature and the processing time as the preset process parameters.

[0071] Specifically, the simulated plasma power range is 0W to 5kW, and the processor can input each plasma power value to be measured in this simulated plasma power range, as well as the preset processing temperature and processing time into the above hydrogen content model to determine the hydrogen distribution and total hydrogen amount in the film.

[0072] Afterwards, the processor can obtain the hydrogen distribution and total hydrogen amount results obtained by inputting each plasma power value to be measured, and derive the influence of the process parameter of plasma power on the effect of the dehydrogenation process. Specifically, as the plasma power increases, the ion density and energy increase accordingly, resulting in an increase in the degree of hydrogen activation near the surface of the film. At this time, more hydrogen will exist in the form of interstitial atoms, increasing the diffusion rate of hydrogen near the surface of the material. In this way, the present invention can appropriately increase the plasma power of the dehydrogenation process within a certain plasma power range based on the above theoretical results to optimize the strategy of the dehydrogenation process, thereby reducing hydrogen retention in the material and improving the stability of the material.

[0073] In summary, the above-mentioned film parameter determination method, film parameter determination device and computer-readable storage medium provided by the present invention can be used to accurately determine the hydrogen distribution and total hydrogen amount in the film by inputting multiple process parameters of the dehydrogenation treatment process into a pre-established hydrogen content model, and can be used to provide theoretical guidance for the optimization of process parameters of the dehydrogenation treatment process.

[0074] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0075] Those skilled in the art will appreciate that information, signals, and data may be represented using any of a variety of different technologies and techniques. For example, data, instructions, commands, information, signals, bits, symbols, and chips cited throughout the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or magnetic particles, optical fields or optical particles, or any combination thereof.

[0076] Those skilled in the art will further appreciate that the various illustrative logic blocks, modules, circuits, and algorithm steps described in conjunction with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or a combination of the two. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps are generally described above in terms of their functionality. Whether such functionality is implemented as hardware or software depends on the specific application and the design constraints imposed on the overall system. The technician may implement the described functionality in different ways for each specific application, but such implementation decisions should not be interpreted as resulting in a departure from the scope of the present invention.

[0077] The various illustrative logic modules and circuits described in conjunction with the embodiments disclosed herein may be implemented or executed with a general purpose processor, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. A general purpose processor may be a microprocessor, but in the alternative, the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in cooperation with a DSP core, or any other such configuration.

[0078] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0079] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0080] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for determining film parameters, characterized in that: The following steps are involved: Acquiring a plurality of process parameters of a dehydrogenation process, wherein the plurality of process parameters at least include a process temperature, a plasma power, and a process time; as well as Each of the process parameters is input into a pre-established hydrogen content model to jointly determine the hydrogen distribution and the total amount of hydrogen in the film through the hydrogen atom activation diffusion unit, the hydrogen atom and defect interaction unit, and the hydrogen atom recombination and desorption unit of the hydrogen content model.

2. The determination method according to claim 1, characterized in that The hydrogen atom activation diffusion unit is represented as: Among them, C H is the volume density of hydrogen atoms in the form of gaps, D is the diffusion coefficient of the hydrogen atoms in the film, a0 is the minimum unit cell size in the film, is the intrinsic defect number density of hydrogen trapped in the film, C t is the remaining unoccupied defect density in the film, C b is the vacancy defect density in the film, E Hdtrap is the ability of the defect to capture the hydrogen atom, k b is the Boltzmann constant, and T is the processing temperature.

3. The determination method according to claim 1, characterized in that: The interaction unit of the hydrogen atom and the defect is expressed as: Among them, C H is the volume density of hydrogen atoms in the form of gaps, D is the diffusion coefficient of the hydrogen atoms in the film, a0 is the minimum unit cell size in the film, is the intrinsic defect number density of hydrogen trapped in the film, C t is the remaining unoccupied defect density in the film, C b is the vacancy defect density in the film, E Hdtrap is the ability of the defect to capture the hydrogen atom, k b is the Boltzmann constant, and T is the processing temperature.

4. The determination method according to claim 1, characterized in that: The hydrogen atom recombination and desorption unit is represented as: Among them, C H|O is the density of the hydrogen atoms in the surface layer of the film, L0 is the unit depth of the surface layer, D is the diffusion coefficient of the hydrogen atoms in the film, C H is the volume density of hydrogen atoms in the form of interstitials, K H is the release rate of the hydrogen atoms on the surface of the film.

5. The determination method according to claim 4, characterized in that: The release rate K of the film material surface H is represented as: Among them, K r is the number of hydrogen atoms that recombine on the surface, K c is the dissociation rate.

6. The determination method according to claim 1, characterized in that: The step of determining the total amount of hydrogen in the film comprises: Determine the total captured amount N of the hydrogen atoms captured by the defects during the processing time tH : N tH =∫0 ∞ C tH (z,t)dz Among them, C tH is the volume density of hydrogen atoms trapped by defects, t is the processing time; and According to the total captured amount N tH , determine the total amount of hydrogen N in the film material H : N H =∫0 ∞ C H (z,t)dz+N tH Among them, C H is the volume density of hydrogen atoms existing in the form of interstitials.

7. The determination method according to claim 1, characterized in that: The step of adjusting the process parameters according to the hydrogen distribution and the total amount of hydrogen to determine the optimal parameter combination of the dehydrogenation process comprises: determining one of the processing temperature, the processing time and the plasma power as a process parameter to be measured, and determining the other two of the processing temperature, the processing time and the plasma power as preset process parameters; and The process parameters to be measured are adjusted within a preset parameter adjustment range to determine an optimal parameter combination for the dehydrogenation treatment process.

8. The determination method according to claim 7, characterized in that: The step of determining one of the processing temperature, the processing time and the plasma power as the process parameter to be measured, and determining the other two of the processing temperature, the processing time and the plasma power as the preset process parameters also includes: Determine the processing temperature as the process parameter to be measured, and determine the processing time and the plasma power as the preset process parameters; or Determine the processing time as the process parameter to be measured, and determine the processing temperature and the plasma power as the preset process parameters; or The plasma power is determined as the process parameter to be measured, and the processing temperature and the processing time are determined as preset process parameters.

9. A device for determining film parameters, characterized in that: include: a memory having computer instructions stored thereon; as well as A processor is connected to the memory and configured to execute computer instructions stored therein to implement the method for determining film parameters according to any one of claims 1 to 8.

10. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the method for determining thin film parameters according to any one of claims 1 to 8 is implemented.

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