Electron beam spot measurement tool, electron beam spot measurement device, manufacturing method, and measurement method

Abstract

The invention discloses an electron beam spot measurement tool and device, a manufacturing method and a measurement method, and relates to the technical field of electron beam spot measurement, the electron beam spot measurement tool is a silicon nitride thin film window and comprises a substrate and a thin film, the substrate is provided with a through hole communicating two sides of the substrate, the thin film covers the through hole, and the through hole is communicated with the thin film. A first area is formed on the film corresponding to the substrate, a second area is formed on the film corresponding to the through hole, a border line of the first area and the second area forms a knife edge, the substrate is made of silicon, and the film is a silicon nitride film. According to the tool, the device, the manufacturing method and the measuring method for measuring the beam spot of the electron beam, the accuracy degree during measurement of the beam spot of the electron beam can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of electron beam spot measurement, and in particular to a tool, a device, a manufacturing method and a measuring method for electron beam spot measurement. Background Art

[0002] The knife-edge method is a commonly used method for measuring the size of an electron beam spot. This method usually places a material that can block the electron beam from passing through on one side of a flat dividing line (knife edge), and hollows out the other side, so that the electron beam and the knife edge move relative to each other, and the electron beam is scanned from the material that can block the electron beam from passing through to the hollowed-out area. At the same time, the beam intensity of the electron beam is measured when it is at different positions, and a curve of the change in the beam intensity as the electron beam moves through the knife edge position is drawn. The size of the electron beam spot can be calculated from the curve. However, the knife edge of conventional metal materials currently has a large roughness, and the beam current of the electron beam cannot be accurately measured when it scans the knife edge, which directly affects the accuracy of the electron beam spot measurement. Therefore, there is an urgent need for a tool, device, manufacturing method and measurement method for electron beam spot measurement that can improve the accuracy of electron beam spot measurement. Summary of the invention

[0003] The object of the present invention is to provide a tool, device, manufacturing method and measuring method for electron beam spot measurement to solve the problems existing in the above-mentioned prior art and to improve the accuracy of electron beam spot measurement.

[0004] To achieve the above object, the present invention provides the following solutions:

[0005] The present invention provides a tool for measuring an electron beam spot, comprising: a silicon nitride film window, wherein the silicon nitride film window comprises: a substrate and a film, wherein a through hole connecting two sides of the substrate is provided on the substrate, wherein the film covers the through hole, wherein a first area is formed at a position corresponding to the substrate, wherein a second area is formed at a position corresponding to the through hole, wherein a boundary line between the first area and the second area forms a knife edge, wherein at least a part of the knife edge is a straight line, wherein the substrate is made of silicon, and wherein the film is a silicon nitride film.

[0006] The present invention also provides a device for measuring an electron beam spot, comprising the above-mentioned tool for measuring an electron beam spot, wherein a window area is opened on the second area, and the window area is formed by ion beam etching. The thin film at the window area is hollow or thinner than the thin film outside the window area, and a conductive film is covered on at least the second area outside the window area, and a high-precision knife edge is formed at the junction of the window area and the second area.

[0007] In some embodiments, the conductive film is a platinum film or a tungsten film.

[0008] In some embodiments, at least a portion of the high-precision knife edge is a straight line, and the size of the window area is larger than the size of the electron beam spot to be measured.

[0009] In some embodiments, the window area on the second area is rectangular or circular.

[0010] In some embodiments, when the window area is rectangular, the width of the window area is smaller than the diameter of the electron beam spot; when the window area is circular, the diameter of the window area is smaller than the diameter of the electron beam spot.

[0011] The present invention also provides a method for manufacturing an electron beam spot measuring device, wherein a window area is opened on the second area of ​​the above-mentioned electron beam spot measuring tool by ion beam etching, the thin film at the window area is hollow or thinner than the thin film outside the window area, and a conductive film is covered on at least the second area outside the window area, and a high-precision knife edge is formed at the junction of the window area and the second area.

[0012] The present invention also provides a method for measuring the size of an electron beam spot, which uses the above-mentioned electron beam spot measurement tool and includes the following steps: irradiating the electron beam on the first area along a direction perpendicular to the film, then passing the electron beam through a straight knife edge and moving toward the second area until the electron beam is completely irradiated on the second area, and at the same time detecting the magnitude of the beam intensity after the electron beam passes through the first area and the second area, and drawing a curve graph of the electron beam current intensity changing with the electron beam movement distance.

[0013] The present invention also provides a method for measuring the size of an electron beam spot, which uses the above-mentioned device for measuring the electron beam spot, and includes the following steps: irradiating the electron beam on the second area along a direction perpendicular to the film, then passing the electron beam through a straight high-precision knife edge and moving toward the window area until the electron beam is completely irradiated on the window area, and at the same time detecting the size of the beam intensity after the electron beam passes through the second area and the window area, and drawing a curve graph of the change of the beam intensity after the electron beam passes through the second area and the window area with the electron beam moving distance.

[0014] The present invention also provides a method for measuring the intensity distribution of an electron beam spot, which uses the above-mentioned device for measuring an electron beam spot and includes the following steps: irradiating the electron beam on the second area along a direction perpendicular to the film, then moving the electron beam in the direction of the window area, so that multiple positions of the electron beam spot pass through the window area and then are completely irradiated on the second area, and at the same time detecting the magnitude of the beam intensity after the electron beam passes through the second area and the window area, and drawing a curve graph of the change in the beam intensity after the electron beam passes through the second area and the window area as the electron beam moves.

[0015] Compared with the prior art, the present invention has achieved the following technical effects:

[0016] The electron beam spot measuring tool provided by the present invention adopts a silicon nitride film window. When measuring, the electron beam spot is first projected on the first area, and then the electron beam spot is moved to the second area through the knife edge. At the same time, a Faraday ring is used on the side of the silicon substrate away from the film to measure the beam current intensity of the electron beam passing through the first area and the second area. Since the beam current intensity of the electron beam after passing through the first area is very small, and the beam current intensity of the electron beam after passing through the second area is relatively large, a curve of the beam current intensity of the electron beam after passing through the first area and the second area and the distance of the electron beam movement is drawn according to the measurement results, and then the size of the electron beam spot is obtained. Since there is a relatively flat dividing line between the first area and the second area, the measurement result using the electron beam spot measuring tool is more accurate.

[0017] Furthermore, the window area is formed by using ion beam etching technology, and there is a smoother boundary line between the window area and the second area. The boundary line between the window area and the second area is used as a knife edge, which further improves the accuracy of measurement.

[0018] Furthermore, by opening a window area smaller than the size of the electron beam spot and allowing different positions of the electron beam spot to pass through the window area, the intensity of the electron beam spot passing through the window area and the second area is measured simultaneously, and a curve graph of the change in beam intensity with the electron beam movement distance after the electron beam passes through the second area and the window area is drawn, thereby achieving the measurement of the electron beam spot intensity distribution. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 A top view of a tool for measuring an electron beam spot in some embodiments of the present invention;

[0021] Figure 2 for Figure 1 Side view of the cross section of the tool used for measuring the electron beam spot;

[0022] Figure 3 A top view of a tool for measuring an electron beam spot in some embodiments of the present invention;

[0023] Figure 4 for Figure 3 Side view of the cross section of the tool used for measuring the electron beam spot;

[0024] Figure 5 A top view of another electron beam spot measurement tool using a rectangular window area in some embodiments of the present invention;

[0025] Figure 6 A top view of another electron beam spot measurement tool using a circular window area in some embodiments of the present invention;

[0026] Figure 7 for Figure 1 and Figure 2 The curve of beam intensity versus electron beam moving distance when measured by the electron beam spot measurement tool;

[0027] Figure 8 for Figure 3 and Figure 4 The curve of beam intensity versus electron beam moving distance when measured by the electron beam spot measurement tool;

[0028] Fig. 9 for Figure 5 The curve of beam intensity versus electron beam moving distance when measured by the electron beam spot measurement tool;

[0029] Fig.10 for Figure 6 The curve of beam intensity versus electron beam moving distance when measured by the electron beam spot measurement tool

[0030] In the figure: 1. substrate; 2. film; 3. first zone; 4. second zone; 5. knife edge; 6. window zone; 7. high-precision knife edge; 8. electron beam spot. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] The object of the present invention is to provide a tool, device, manufacturing method and measuring method for electron beam spot measurement to solve the problems existing in the above-mentioned prior art and to improve the accuracy of electron beam spot measurement.

[0033] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0034] Embodiment 1

[0035] This embodiment provides a tool for measuring electron beam spot, such as Figure 1-2As shown, it includes a silicon nitride film window, which includes: a substrate 1 and a film 2. The substrate 1 is provided with a through hole connecting the two sides of the substrate 1, and the film 2 covers the through hole. The film 2 forms a first area 3 corresponding to the position of the substrate 1, and the film 2 forms a second area 4 corresponding to the position of the through hole. The boundary line between the first area 3 and the second area 4 forms a knife edge 5, and at least a part of the knife edge 5 is a straight line. The substrate 1 is made of silicon, and the film 2 is a silicon nitride film.

[0036] The electron beam spot measurement tool provided in this embodiment adopts a silicon nitride film window. The silicon nitride film window is mostly formed by a chemical vapor deposition (CVD) process to cover the surface of the silicon substrate 1 with silicon nitride. Then, a part of the silicon substrate 1 on the other side away from the film 2 is etched away to form a through hole connecting the two sides of the substrate 1. At this time, the film 2 corresponding to the through hole forms a second area 4, and the film 2 corresponding to the silicon substrate 1 that has not been etched forms a first area 3. A knife edge 5 is formed at the junction of the second area 4 and the first area 3. When measuring, the electron beam spot is first projected on the first area 3, and then the electron beam spot passes through the knife edge 5 and moves toward the second area 4. At the same time, a Faraday ring is used on the side of the silicon substrate 1 away from the film 2 to measure the beam intensity of the electron beam passing through the first area 3 and the second area 4. Since the beam intensity of the electron beam after passing through the first area 3 is very small, and the beam intensity of the beam spot after passing through the second area 4 is relatively large, a curve of the beam intensity of the electron beam after passing through the first area 3 and the second area 4 versus the distance the electron beam moves is drawn according to the measurement results, as shown in FIG. Figure 7 As shown, the size of the electron beam spot 8 is obtained according to the curve. Since there is a relatively flat boundary between the first area 3 and the second area 4, the measurement result using the electron beam spot 8 measurement tool is more accurate.

[0037] Embodiment 2

[0038] This embodiment provides an electron beam spot measurement device, such as Figure 3-4 As shown, the electron beam spot measurement tool in the first embodiment is included, a window area 6 is provided on the second area 4, the window area 6 is formed by ion beam etching, the thin film 2 at the window area 6 is hollow or thinner than the thin film 2 outside the window area 6, at least the second area outside the window area 6 is covered with a conductive film, and a high-precision knife edge 7 is formed at the junction of the window area 6 and the second area 4. During measurement, the electron beam spot is first projected onto the conductive film of the second area 4, and then the electron beam spot is moved toward the window area 6 through the high-precision knife edge 7. At the same time, a Faraday ring is used on the side of the silicon substrate 1 away from the thin film 2 to measure the beam current intensity of the electron beam passing through the window area 6 and the second area 4, and a curve of the spot beam current intensity versus the electron beam moving distance after the electron beam passes through the second area 4 and the window area 6 is drawn according to the measurement results, as shown in FIG. Figure 8As shown, the size or intensity distribution of the electron beam spot is obtained. Since the ion beam etching method can open a window area 6 with a smoother edge, the measurement result is also more accurate.

[0039] In one implementation of this embodiment, the conductive film is a platinum film or a tungsten film. Platinum or tungsten has good conductivity and high density, and can block the electron beam from passing through the second region 4.

[0040] In one implementation of this embodiment, at least a portion of the high-precision knife edge 7 is a straight line, and the size of the window area 6 is larger than the size of the electron beam spot to be measured. In the process of the electron beam moving from the second area 4 to the window area 6, the electron beam will pass through the high-precision knife edge 7. At this time, a portion of the electron beam is irradiated on the second area 4, and a portion is irradiated on the window area 6. As the electron beam moves and completely irradiates the window area 6, the size of the electron beam spot can be calculated by analyzing the beam current intensity of the electron beam passing through the second area 4 and the window area 6 during the whole process, and obtaining a curve of the change of the beam current intensity of the electron beam spot passing through the second area 4 and the window area 6 with the electron beam moving distance.

[0041] It should be noted that the second area 4 in the first embodiment and the window area 6 in the second embodiment can be set to a rectangular, triangular, semicircular or other shape, as long as one edge can be a straight line.

[0042] Embodiment 3

[0043] The electron beam spot measurement tool in this embodiment is different from that in the second embodiment in that: Figure 5-6 As shown, the window area 6 opened on the second area 4 is rectangular or circular. When the window area 6 is rectangular, the width of the window area 6 is smaller than the diameter of the electron beam spot 8. When the window area 6 is circular, the diameter of the window area 6 is smaller than the diameter of the electron beam spot 8. Using the electron beam spot 8 measurement tool, when the electron beam moves from the second area 4 to the window area 6, the electron beam is first irradiated on the second area 4 in a direction perpendicular to the film 2, and then the electron beam is moved in the direction of the window area 6. In this process, different positions of the electron beam spot pass through the window area 6 in turn and then completely irradiate the second area 4 again. By analyzing the beam current intensity of the electron beam passing through the second area 4 and the window area 6 during the whole process, a curve of the change of the beam current intensity with the moving distance of the electron beam is obtained, as shown in FIG. Figure 9-10 As shown, the intensity distribution of the electron beam spot 8 can be calculated.

[0044] in, Figure 6The dotted arrow in the figure indicates the direction of electron beam movement, which is set as the first direction, and the direction perpendicular to the first direction is the second direction. When the circular window area 6 is used for measurement, the relative displacement between the electron beam and the window area 6 along the first direction is considered as one test. In order to obtain the intensity of the electron beam spot at different positions, it is necessary to conduct multiple tests. In each test, the relative position of the electron beam and the window area 6 in the second direction is different, such as Figure 6 As shown, the final measurement is as follows Fig.10 The corresponding Figure 6 The curves of the beam intensity changing with the electron beam moving distance in the three experiments.

[0045] Embodiment 4

[0046] The present embodiment provides a method for manufacturing a tool for measuring an electron beam spot. A window area 6 is opened on the second area 4 of the tool for measuring an electron beam spot in the first embodiment by ion beam etching. The film 2 at the window area 6 is hollow or thinner than the film 2 outside the window area 6. A conductive film is covered on at least the second area 4 outside the window area 6. A high-precision knife edge 7 is formed at the junction of the window area 6 and the second area 4.

[0047] The manufacturing method of the electron beam spot measurement tool in this embodiment can open a window area 6 with a smoother edge on the second area 4 of the thin film 2 by ion beam etching.

[0048] Embodiment 5

[0049] The present embodiment provides a method for measuring the size of an electron beam spot, using the electron beam spot measuring tool in the first embodiment, comprising the following steps: irradiating the electron beam on the first area 3 in a direction perpendicular to the film 2, then passing the electron beam through a linear knife edge 5 and moving in the direction of the second area 4 until the electron beam irradiates the second area 4, and at the same time detecting the magnitude of the beam intensity after the electron beam passes through the first area 3 and the second area 4, and drawing a curve graph showing the change of the beam intensity of the beam spot with the electron beam moving distance after the electron beam passes through the first area 3 and the second area 4.

[0050] The electron beam spot size measurement method provided in this embodiment uses the electron beam spot measurement tool in the first embodiment. There is a smooth boundary line between the first area 3 and the second area 4 of the silicon nitride film window, so that the measurement accuracy is improved.

[0051] Embodiment 6

[0052] The present embodiment provides a method for measuring the size of an electron beam spot, using the electron beam spot measuring tool in the second embodiment, including the following steps: irradiating the electron beam onto the second region 4 in a direction perpendicular to the film 2, then passing the electron beam through a straight high-precision knife edge 7 and moving toward the window region 6 until the electron beam is completely irradiated onto the window region 6, and at the same time detecting the magnitude of the beam intensity after the electron beam passes through the second region 4 and the window region 6, and drawing a curve of the change in the beam intensity after the electron beam passes through the second region 4 and the window region 6 as the electron beam moves.

[0053] This embodiment provides a method for measuring the size of an electron beam spot. The electron beam spot measuring tool in the first embodiment is used to form a window area 6 through ion beam etching technology, so that there is a smoother boundary line between the second area 4 and the window area 6, thereby improving the measurement accuracy.

[0054] Embodiment 7

[0055] The present embodiment provides a method for measuring the electron beam spot intensity distribution, using the electron beam spot measurement tool in the third embodiment, including the following steps: irradiating the electron beam on the second area 4 along a direction perpendicular to the film 2, then moving the electron beam in the direction of the window area 6, so that multiple positions of the electron beam spot pass through the window area 6, and simultaneously detecting the magnitude of the beam intensity after the electron beam passes through the second area 4 and the window area 6, and drawing a curve graph of the change of the beam intensity after the electron beam passes through the second area 4 and the window area 6 with the electron beam moving distance.

[0056] The method for measuring the intensity distribution of an electron beam spot provided in this embodiment is to open a window area 6 that is smaller than the size of the electron beam spot 8, and allow different positions of the electron beam spot 8 to pass through the window area 6, while measuring the intensity of the electron beam spot 8 passing through the window area 6 and the second area 4, and draw a curve of the change in beam intensity with the electron beam moving distance after the electron beam passes through the second area 4 and the window area 6, thereby realizing the measurement of the intensity distribution of the electron beam spot 8.

[0057] The present invention uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only used to help understand the method and core ideas of the present invention. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A tool for measuring electron beam spot, characterized in that: include: A silicon nitride film window, the silicon nitride film window comprising: a substrate and a film, the substrate being provided with a through hole connecting two sides of the substrate, the film covering the through hole, the film forming a first area corresponding to the position of the substrate, the film forming a second area corresponding to the position of the through hole, the boundary line between the first area and the second area forming a knife edge, at least a part of the knife edge being a straight line, the substrate being made of silicon, and the film being a silicon nitride film.

2. An electron beam spot measurement device, characterized in that: It includes the electron beam spot measurement tool as described in claim 1, wherein a window area is opened on the second area, and the window area is formed by ion beam etching. The film at the window area is hollow or thinner than the film outside the window area, and a conductive film is covered on at least the second area outside the window area, and a high-precision knife edge is formed at the junction of the window area and the second area.

3. The electron beam spot measuring device according to claim 2, characterized in that: The conductive film is a platinum film or a tungsten film.

4. The electron beam spot measuring device according to claim 2, characterized in that: At least a part of the high-precision knife edge is a straight line, and the size of the window area is larger than the size of the beam spot of the electron beam to be measured.

5. The electron beam spot measuring device according to claim 2, characterized in that: The window area on the second area is rectangular or circular.

6. The electron beam spot measuring device according to claim 5, characterized in that: When the window area is rectangular, the width of the window area is smaller than the diameter of the electron beam spot; when the window area is circular, the diameter of the window area is smaller than the diameter of the electron beam spot.

7. A method for manufacturing an electron beam spot measurement device, characterized in that: A window area is opened on the second area of ​​the electron beam spot measurement tool described in claim 1 by ion beam etching, the film at the window area is hollow or thinner than the film outside the window area, and a conductive film is covered on at least the second area outside the window area, and a high-precision knife edge is formed at the junction of the window area and the second area.

8. A method for measuring electron beam spot size, characterized in that: The electron beam spot measurement tool described in claim 1 includes the following steps: irradiating the electron beam on the first area along a direction perpendicular to the film, then passing the electron beam through a linear knife edge and moving toward the second area until the electron beam completely irradiates the second area, and at the same time detecting the magnitude of the beam intensity after the electron beam passes through the first area and the second area, and drawing a curve graph of the electron beam current intensity versus the electron beam movement distance.

9. A method for measuring electron beam spot size, characterized in that: The electron beam spot measurement tool described in claim 4 comprises the following steps: irradiating the electron beam on the second area along a direction perpendicular to the film, then passing the electron beam through a straight high-precision knife edge and moving toward the window area until the electron beam completely irradiates the window area, and simultaneously detecting the magnitude of the beam intensity after the electron beam passes through the second area and the window area, and drawing a curve graph of the change of the beam intensity after the electron beam passes through the second area and the window area with the electron beam moving distance.

10. A method for measuring the intensity distribution of an electron beam spot, characterized in that: The electron beam spot measurement tool described in claim 6 comprises the following steps: irradiating the second area with an electron beam in a direction perpendicular to the film, then moving the electron beam in the direction of the window area so that a plurality of positions of the electron beam spot pass through the window area and then completely irradiate the second area, and simultaneously detecting the magnitude of the beam intensity after the electron beam passes through the second area and the window area, and drawing a curve graph showing the variation of the beam intensity with the electron beam movement distance after the electron beam passes through the second area and the window area.

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