Electronic package

Abstract

The invention discloses an electronic package. Comprising a bearing structure, an electronic component arranged on the bearing structure, a heat dissipation structure arranged on the electronic component, a heat conductor clamped between the electronic component and the heat dissipation structure, and a first boundary metal compound layer formed between the heat dissipation structure and the heat conductor, and the second boundary metal compound layer is formed between the heat conductor and the electronic component, so that the heat dissipation structure, the heat conductor and the electronic component are firmly jointed through the first boundary metal compound layer and the second boundary metal compound layer, and the heat dissipation effect is improved.

Description

Technical Field

[0001] The present invention relates to an electronic package, in particular to an electronic package with a heat dissipation structure. Background Art

[0002] With the rise and rapid development of various applications and technologies that require high-speed computing, such as e-sports games, high-resolution audio and video multimedia, and autonomous driving, as well as the demand for miniaturization of related equipment, the number of components contained in semiconductor chips (ICs) using packaging structures such as flip chip ball grid arrays (FCBGA) is not only increasing, but the processing and computing speeds are also getting faster and faster, making the heat generated therein more and more considerable, and the requirements for heat dissipation structures are also getting higher and higher.

[0003] Figure 1 FIG. 1 is a cross-sectional schematic diagram of an existing semiconductor package 1. Figure 1 As shown, the semiconductor package 1 includes a package substrate 10, a semiconductor chip 11 mounted on the upper side of the package substrate 10 in a flip-chip manner, and a heat sink 12, which is disposed on the upper surface of the semiconductor chip 11 through a thermal interface material (TIM) 13. Since the heat sink 12 is mainly composed of copper, in order to prevent oxidation of its surface, a nickel (Ni) layer 121 is usually plated on the surface of the heat sink 12, and in order to effectively bond the heat sink 12 to the thermal interface material 13, a nickel / gold layer 122 is generally plated on the local position of the heat sink 12 to be bonded to the thermal interface material 13.

[0004] However, the aforementioned additionally plated nickel (Ni) layer 121 and nickel / gold layer 122 will increase the process cost. In addition, in practice, the semiconductor chip 11 and the thermal interface material 13 cannot be effectively bonded, resulting in poor product reliability. Therefore, how to overcome the above-mentioned problems of the prior art has become a topic that needs to be solved urgently. Summary of the invention

[0005] In view of the various deficiencies of the above-mentioned prior art, the present invention provides an electronic package, comprising: a supporting structure; an electronic component, disposed on the supporting structure; a heat conductor, disposed on the electronic component; a heat dissipation structure, disposed on the electronic component and sandwiching the heat conductor between the electronic component and the heat dissipation structure; a first boundary metal compound layer, formed between the heat dissipation structure and the heat conductor; and a second boundary metal compound layer, formed between the heat conductor and the electronic component.

[0006] In the aforementioned electronic package, the material and thickness of the first boundary metal compound layer are different from the material and thickness of the second boundary metal compound layer, and the thickness of the first boundary metal compound layer is greater than the thickness of the second boundary metal compound layer. For example, the first boundary metal compound layer is copper indium (Cu2In), and the second boundary metal compound layer is nickel indium compound (Ni3In7).

[0007] In the aforementioned electronic package, the heat conductor is a thermally conductive interface material layer, for example, the material of the thermally conductive interface material layer is metal indium (In).

[0008] In the aforementioned electronic package, a metal anti-oxidation layer is disposed on the outer surface of the heat dissipation structure. For example, the material of the metal anti-oxidation layer is nickel (Ni).

[0009] In the aforementioned electronic package, the heat dissipation structure is made of metal copper (Cu).

[0010] In the aforementioned electronic package, before forming the first intermetallic compound layer, a non-metallic anti-oxidation layer is provided on the inner surface of the heat dissipation structure. For example, the non-metallic anti-oxidation layer is an imidazole compound.

[0011] In the aforementioned electronic package, before forming the second interfacial metal compound layer, an interface metal layer is disposed between the heat sink and the electronic element. For example, the interface metal layer is a nickel / gold (Ni / Au) layer.

[0012] Through the implementation of the present invention, a first boundary metal compound layer and a second boundary metal compound layer can be formed between the heat dissipation structure, the heat conductor and the electronic components, respectively, so that a stable connection is formed between the heat dissipation structure, the heat conductor and the electronic components and the heat dissipation effect is improved. At the same time, the present invention can choose to only set a metal anti-oxidation layer (nickel layer) on the outer surface of the heat dissipation structure to save process costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a cross-sectional schematic diagram of a conventional semiconductor package.

[0014] FIG. 2A to FIG. 2B It is a cross-sectional schematic diagram of the manufacturing method of the electronic package of the present invention.

[0015] Figure 3 for Figure 2A A cross-sectional schematic diagram of another embodiment of the present invention.

[0016] Main component symbols

[0017] 1 Semiconductor Package

[0018] 10 Package substrate

[0019] 11. Semiconductor Chip

[0020] 12 Heat sink

[0021] 121 Nickel layer

[0022] 122 Nickel / Gold Layer

[0023] 13 Thermal Interface Materials

[0024] 2 Electronic packaging

[0025] 21 Load-bearing structure

[0026] 211 First Surface

[0027] 212 Second Surface

[0028] 22 Electronic components

[0029] 22a Active surface

[0030] 22b Non-active surface

[0031] 220 Conductive bump

[0032] 23 Heat dissipation structure

[0033] 231 Top sheet

[0034] 231a Upper surface

[0035] 231b Lower surface

[0036] 232 Support feet

[0037] 233 Metal Anti-Oxidation Layer

[0038] 24 Heat Conductor

[0039] 25 Interface Metal Layer

[0040] 261 First metal compound layer

[0041] 262 Second boundary metal compound layer

[0042] 27 Non-metallic anti-oxidation layer. DETAILED DESCRIPTION

[0043] The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand other advantages and technical effects of the present invention from the contents disclosed in this specification.

[0044] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings attached to this specification are only used to match the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no substantial technical significance. Any modification of the structure, change in the proportion relationship, or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the technical effects and purposes that can be achieved by the present invention. At the same time, the terms such as "on", "first", "second", and "one" quoted in this specification are only for the convenience of description, and are not used to limit the scope of the implementation of the present invention. The change or adjustment of their relative relationship should also be regarded as the scope of the implementation of the present invention without substantially changing the technical content.

[0045] Figure 2A and Figure 2B FIG. 2 is a cross-sectional schematic diagram of a method for manufacturing an electronic package of the present invention. Figure 2A As shown, first, at least one electronic component 22 is placed on a supporting structure 21 , and a heat dissipation structure 23 is placed on the electronic component 22 via a heat conductor 24 .

[0046] The supporting structure 21 is, for example, a packaging substrate with a circuit layer, a silicon interposer (TSI) with conductive through-silicon via (TSV), or other board types, and has a first surface 211 and a second surface 212 relative to each other. The circuit layer is, for example, a fan-out type redistribution layer (RDL).

[0047] It should be understood that the supporting structure 21 may also be a substrate, component or structure of other supporting components, such as a lead frame, a wafer, or other plates with metal routing, etc., and is not limited to the above.

[0048] The electronic component 22 may be an active component, a passive component, a package module or a combination thereof. The active component is, for example, a semiconductor chip, and the passive component is, for example, a resistor, a capacitor, and an inductor.

[0049] In this embodiment, the electronic component 22 is a semiconductor chip having an active surface 22a and an inactive surface 22b opposite to each other, and the active surface 22a is electrically connected to the supporting structure 21 through a plurality of conductive bumps 220 in a flip-chip manner; or, the electronic component 22 can be electrically connected to the supporting structure 21 by a plurality of bonding wires (not shown) in a wire bonding manner; or, the electronic component 22 can directly contact the supporting structure 21. However, the method of electrically connecting the electronic component 22 to the supporting structure 21 is not limited to the above-mentioned embodiment.

[0050] The heat dissipation structure 23 is, for example, a heat sink, a heat dissipation cover (Lid) or other components or structures with equivalent functions. In this embodiment, a heat dissipation cover is used as an example. The heat dissipation structure 23 has a top sheet 231 and a support leg 232 extending from the top sheet 231. The support leg 232 is fixed to the first surface 211 of the supporting structure 21 around the electronic component 22 through an adhesive layer. The top sheet 231 has an upper surface 231a and a lower surface 231b opposite to each other, and the lower surface 231b of the top sheet 231 is opposite to the non-active surface 22b of the electronic component 22.

[0051] The main material of the heat dissipation structure 23 is copper. To protect the heat dissipation structure 23 , a metal anti-oxidation layer 233 , such as a nickel (Ni) metal layer, may be formed on its outer surface, while no metal anti-oxidation layer is applied on its inner surface.

[0052] In addition, a heat conductor 24 is further disposed between the non-working surface 22b of the electronic component 22 and the lower surface 231b of the top sheet 231 of the heat dissipation structure 23 to more efficiently conduct the heat generated by the electronic component 22 to the heat dissipation structure 23 and then dissipate it to the environment. Preferably, the heat conductor 24 is a thermal interface material (TIM) layer, the main material of which is metal indium (In).

[0053] Furthermore, an interface metal layer 25 may be disposed between the heat sink 24 and the non-working surface 22 b of the electronic component 22 . The interface metal layer 25 may be, for example, a nickel / gold (Ni / Au) layer.

[0054] like Figure 2BAs shown, a heating process is performed to form a first intermetallic compound (IMC) layer 261 between the heat dissipation structure 23 and the heat conductor 24, and a second intermetallic compound (IMC) layer 262 between the heat conductor 24 and the electronic component 22, thereby obtaining the electronic package 2 of the present invention. As shown in the figure, the electronic package 2 of this embodiment includes: a supporting structure 21; an electronic component 22 arranged on the supporting structure 21; a heat dissipation structure 23 arranged on the electronic component 22; a heat conductor 24 sandwiched between the electronic component 22 and the heat dissipation structure 23; and a first boundary metal compound layer 261 and a second boundary metal compound layer 262 formed between the heat dissipation structure 23, the heat conductor 24 and the electronic component 22, respectively. By forming the first boundary metal compound layer 261 between the heat dissipation structure 23 and the heat conductor 24, and by forming the second boundary metal compound layer 262 between the heat conductor 24 and the electronic component 22, a stable connection can be formed between the heat dissipation structure 23, the heat conductor 24 and the electronic component 22, and the heat dissipation effect can be improved.

[0055] The material and thickness of the first boundary metal compound layer 261 are different from those of the second boundary metal compound layer. For example, the first boundary metal compound layer 261 is copper indium (Cu2In), the second boundary metal compound layer 262 is nickel indium compound (Ni3In7), and the thickness of the first boundary metal compound layer 261 (for example, 4um) is greater than the thickness of the second boundary metal compound layer 262 (for example, 2um).

[0056] See also Figure 3 In other embodiments, a non-metallic anti-oxidation layer 27, such as an imidazole compound, may be provided on the inner surface of the heat dissipation structure 23 (the side close to the heat conductor 24) to protect the heat dissipation structure. Figure 2B As shown, the electronic package 2 has a first boundary metal compound layer 261 and a second boundary metal compound layer 262 between the heat dissipation structure 23, the heat conductor 24 and the electronic component 22 respectively.

[0057] In summary, the electronic package of the present invention forms a first boundary metal compound layer 261 and a second boundary metal compound layer 262 between the heat dissipation structure 23, the heat conductor 24 and the electronic component 22, respectively, so that a stable connection is formed between the heat dissipation structure 23, the heat conductor 24 and the electronic component 22 and the heat dissipation effect is improved. At the same time, the present invention can choose to only set a metal anti-oxidation layer (nickel layer) on the outer surface of the heat dissipation structure 23 to save process costs.

[0058] The above embodiments are only used to illustrate the principles and technical effects of the present invention, and are not used to limit the present invention. Any person skilled in the art may modify the above embodiments without violating the inventive concept and scope of the present invention. Therefore, the scope of protection of the present invention should be as listed in the claims.

Claims

1. An electronic package, comprising: load-bearing structure; An electronic component is disposed on the supporting structure; A heat conductor is disposed on the electronic component; A heat dissipation structure is disposed on the electronic component and the heat conductor is sandwiched between the electronic component and the heat dissipation structure; A first metal compound layer is formed between the heat dissipation structure and the heat conductor; as well as The second intermetallic compound layer is formed between the heat conductor and the electronic element.

2. The electronic package of claim 1, wherein: The material and thickness of the first boundary metal compound layer are different from the material and thickness of the second boundary metal compound layer.

3. The electronic package of claim 1, wherein: The first boundary metal compound layer is copper indium.

4. The electronic package of claim 1, wherein: The second boundary metal compound layer is a nickel-indium compound.

5. The electronic package of claim 1, wherein: The thickness of the first boundary metal compound layer is greater than the thickness of the second boundary metal compound layer.

6. The electronic package of claim 1, wherein: The heat conductor is a heat conductive interface material layer.

7. The electronic package of claim 6, wherein: The material of the thermal conductive interface material layer is metal indium.

8. The electronic package of claim 1, wherein: The outer surface of the heat dissipation structure is provided with a metal anti-oxidation layer.

9. The electronic package of claim 8, wherein: The material of the metal anti-oxidation layer is metal nickel.

10. The electronic package of claim 1, wherein: The heat dissipation structure is made of metal copper.

11. The electronic package of claim 1, wherein: Before forming the first intermetallic compound layer, a non-metallic anti-oxidation layer is disposed on the inner surface of the heat dissipation structure.

12. The electronic package of claim 11, wherein: The non-metallic anti-oxidation layer is an imidazole compound.

13. The electronic package of claim 1, wherein: Before forming the second interface metal compound layer, an interface metal layer is arranged between the heat sink and the electronic element.

14. The electronic package of claim 13, wherein: The interface metal layer is a nickel / gold layer.

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