Self-packaging thermoelectric power generation module and preparation method thereof

Abstract

The invention provides a self-packaging thermoelectric power generation module which comprises a first copper-clad substrate, the first copper-clad substrate is connected with a stamping shell to form a closed space, the closed space comprises a heat conduction buffer layer, a second copper-clad substrate, a diffusion barrier layer and an N / P thermocouple pair which are sequentially stacked, the N / P thermocouple pair is connected with the first copper-clad substrate, and the first copper-clad substrate is connected with the second copper-clad substrate. The first copper-clad substrate is a double-layer vertical interconnection ceramic copper-clad substrate, the double-layer vertical interconnection ceramic copper-clad substrate comprises a first layer copper-clad substrate and a second layer copper-clad substrate which are connected with each other, the first layer copper-clad substrate comprises a first surface and a first copper-clad surface, the first surface is provided with a first electrode, the first electrode is connected with the N / P thermocouple pair, and the second surface is provided with a second electrode. A first electrode is arranged on the first copper-clad surface, a gap is arranged between the first electrodes, a second electrode is arranged on the first copper-clad surface, a first isolation strip is arranged outside the second electrode, and the first copper-clad substrate and the second copper-clad substrate are in electrode connection through a through hole. And the problem that the device is oxidized in the air is relieved.

Description

Technical Field

[0001] The present application belongs to the technical field of thermoelectric materials, and in particular, relates to a self-packaged thermoelectric power generation module and a preparation method thereof. Background Art

[0002] Thermoelectric power conversion devices have the advantages of simple structure, no noise, and long service life. They can realize the conversion of thermal energy into electrical energy and are a more environmentally friendly way of power supply.

[0003] There are two main factors that restrict the widespread application of thermoelectric conversion technology. The first is the material properties of thermoelectric materials, which determine that thermoelectric materials have a high theoretical conversion efficiency. The second is the device preparation and integration technology, which directly determines the reliability and conversion efficiency of the device.

[0004] At present, the conventional thermoelectric power generation module is composed of N PN thermocouple pairs, and the two ends are connected by a single-layer ceramic substrate to realize the series-parallel connection between the thermocouple pairs. This structural design exposes the entire thermoelectric power generation device to the air, which makes the thermoelectric device easily oxidized during high-temperature service, which hinders the practical application of thermoelectric devices. In response to this problem, there has been a solution to coat the surface of the thermoelectric material and the electrode surface with a ceramic coating, but due to the mismatch of the thermal expansion coefficient between the ceramic coating and the thermoelectric material, the generation of surface cracks cannot be avoided, and it is difficult to achieve true isolation protection of the air. Patent CN201710848199.7 invented an integrated packaged thermoelectric power generation module structure, which uses a metal shell to encapsulate the thermoelectric module in a confined space to achieve high-temperature anti-oxidation protection for the thermoelectric material and the electrode material. However, in this patent, the output sensor electrode is passed through the ceramic bottom plate to interconnect the thermoelectric device with the outside circuit, but the process of insulating vacuum sealing between the output sensor and the bottom plate is complicated, and the electrode extends from the bottom plate, which hinders the installation of the device and the cold end heat sink, which is not conducive to the high-density arrangement of the device. Therefore, it is now necessary to design a new packaging structure to achieve the high-temperature anti-oxidation function of thermoelectric power generation devices.

[0005] Generally speaking, thermoelectric materials are easily oxidized when exposed to air at high temperatures. The current treatment method for oxidation is to cover the surface of the material with an anti-oxidation coating. This technology has high requirements for the coating and is difficult to prepare. In addition, for thermoelectric devices, the current structure of thermoelectric devices does not involve better protection against the fact that the material is easily oxidized at high temperatures. Summary of the invention

[0006] 1. Technical issues to be solved

[0007] Thermoelectric devices are usually packaged with P-type and N-type thermoelectric materials, electrodes, single-layer ceramic substrates and other structures. Since most thermoelectric materials and electrode materials are very easily oxidized at high temperatures, the practical application of thermoelectric devices has certain difficulties. The present application provides a self-packaged thermoelectric power generation module and a preparation method thereof.

[0008] 2. Technical solution

[0009] In order to achieve the above-mentioned purpose, the present application provides a self-packaged thermoelectric power generation module, including a first copper-clad substrate, which is connected to a stamping shell to form a closed space, and the closed space includes a thermally conductive buffer layer, a second copper-clad substrate, a diffusion barrier layer and an N / P thermocouple pair stacked in sequence, and the N / P thermocouple pair is connected to the first copper-clad substrate. The first copper-clad substrate is a double-layer vertically interconnected ceramic copper-clad substrate, and the double-layer vertically interconnected ceramic copper-clad substrate includes a first copper-clad substrate and a second copper-clad substrate connected to each other. The first copper-clad substrate includes a first surface and a first copper-clad surface, and a first electrode is arranged on the first surface, and the first electrode is connected to the N / P thermocouple pair. A gap is arranged between the first electrodes, and a second electrode is arranged on the first copper-clad surface. A first isolation zone is arranged outside the second electrode, and the first copper-clad substrate and the second copper-clad substrate are connected by electrodes through through holes.

[0010] Another embodiment provided by the present application is: the first copper-clad substrate includes a first ceramic substrate, the first ceramic substrate includes the first surface and the second surface, the first copper-clad surface includes the second surface and a first copper layer, and the first copper layer is covered on the second surface; the first copper layer and the second electrode are separated by the first isolation zone.

[0011] Another embodiment provided by the present application is: the second copper-clad substrate includes a second ceramic substrate, the second ceramic substrate includes a third surface and a fourth surface, the third surface is covered with a second copper layer to form a second copper-clad surface, a third electrode is arranged on the second copper-clad surface, the third electrode is separated from the second copper-clad surface by a second dividing strip, the first copper layer is connected to the second copper layer, the current generated by the temperature difference of the thermoelectric material flows from the first surface to the fourth surface through the through hole, and the third electrode is externally connected by a lead through a protrusion.

[0012] Another implementation manner provided by the present application is: a metal dam is provided on the first surface, and the stamping shell is encapsulated with the metal dam.

[0013] Another implementation manner provided by the present application is: the first copper-clad substrate and the second copper-clad substrate are brazed and sealed using low-temperature solder SnBi, Pb-Sn or are diffused by high-temperature pressure welding.

[0014] Another implementation provided by the present application is: the thermally conductive buffer layer is graphite carbon paper, the diffusion barrier layer is deposited or sintered on the N / P thermocouple pair, and the diffusion barrier layer is made of TiAl, Nb, Cr, Fe or a high-temperature alloy material.

[0015] Another embodiment provided by the present application is that the N / P thermocouple pair is one or more of skutterudite, bismuth telluride, half-Heusler, lead telluride, silicon germanium, Mg3(Sb / Bi)2 and Mg2(Si / Sn).

[0016] The present application also provides a method for preparing the self-packaged thermoelectric power generation module as described above, the method comprising printing solder on the double-layer vertically interconnected ceramic copper-clad substrate and the second copper-clad substrate respectively by screen printing, and then arranging the N / P thermocouple pair between the double-layer vertically interconnected ceramic copper-clad substrate and the second copper-clad substrate according to the layout design, and placing it in a vacuum welding furnace for one-time welding;

[0017] The stamped shell material is covered to the first surface, the stamped shell and the metal dam are positioned and fitted, and then placed in the vacuum welding furnace again for welding and packaging.

[0018] Another implementation manner provided by the present application is: the atmosphere of the vacuum welding furnace is vacuum, nitrogen or argon, and the gas pressure is less than the atmospheric pressure.

[0019] Another implementation manner provided by the present application is: solder packaging or laser packaging is used between the stamped shell and the metal dam.

[0020] 3. Beneficial effects

[0021] Compared with the prior art, the self-packaged thermoelectric power generation module and the preparation method thereof provided by the present application have the following beneficial effects:

[0022] The self-packaged thermoelectric power generation module provided by the present application uses a double-layer ceramic vertical interconnection substrate combined with a stamping shell to achieve vacuum packaging, which can maintain the long-term use of thermoelectric devices in high temperature and atmospheric environments, and the thermoelectric devices can achieve long-term service reliability and stability. Compared with the previous packaging solution of glass-sealed electrodes, the vacuum packaging process using a double-layer vertical interconnection ceramic substrate is less difficult, has high reliability, low cost, and is more suitable for mass production.

[0023] The self-packaged thermoelectric power generation module provided in the present application adopts a double-layer vertically interconnected ceramic substrate and a stamped shell welding connection structure to achieve vacuum packaging of the device, thereby alleviating the problem of the device being oxidized in the air and providing an effective way for the device in practical applications.

[0024] The self-packaged thermoelectric power generation module provided in the present application realizes the external connection of the electrodes inside and outside the stamped shell, which greatly reduces the process difficulty compared with the vacuum perforated electrodes sealed with glass before.

[0025] The self-packaged thermoelectric power generation module provided in the present application uses a double-layer ceramic substrate and a stamped shell to connect to achieve vacuum self-package inside the device, thereby solving the problem of device anti-oxidation. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic diagram of the first surface and the first copper-clad surface structure of the present application;

[0027] Figure 2 It is a schematic diagram of the second copper-clad surface structure of the present application;

[0028] Figure 3 It is a schematic diagram of the three-dimensional structure of the first copper-clad substrate of the present application;

[0029] Figure 4 It is a schematic diagram of the partial structure of the self-packaged thermoelectric power generation module of the present application;

[0030] Figure 5 It is a schematic diagram of the structure of the self-packaged thermoelectric power generation module of the present application. DETAILED DESCRIPTION

[0031] Hereinafter, the specific embodiments of the present application will be described in detail with reference to the accompanying drawings. According to these detailed descriptions, those skilled in the art can clearly understand the present application and can implement the present application. Without violating the principles of the present application, the features in the various embodiments can be combined to obtain new implementations, or certain features in certain embodiments can be replaced to obtain other preferred implementations.

[0032] See also Figures 1 to 5The present application provides a self-packaged thermoelectric power generation module, including a first copper-clad substrate, which is connected to a stamping shell 16 to form a closed space, and the closed space includes a thermally conductive buffer layer 1, a second copper-clad substrate, a diffusion barrier layer 6 and an N / P thermocouple pair 7 and 8 stacked in sequence, and the N / P thermocouple pair 7 and 8 are connected to the first copper-clad substrate. The first copper-clad substrate is a double-layer vertically interconnected ceramic copper-clad substrate, and the double-layer vertically interconnected ceramic copper-clad substrate includes a first copper-clad substrate 10 and a second copper-clad substrate connected to each other. The first copper-clad substrate 10 includes a first surface and a first copper-clad surface 11, and a first electrode 4 is arranged on the first surface, and the first electrode 4 is connected to the N / P thermocouple pair 7 and 8. A gap is arranged between the first electrodes 4, and a second electrode 17 is arranged on the first copper-clad surface 11. A first isolation zone 18 is arranged outside the second electrode 17, and the first copper-clad substrate 10 and the second copper-clad substrate are connected by electrodes through a through hole 15.

[0033] The double-layer vertically interconnected ceramic substrate is welded and stamped to form a packaging shell to achieve vacuum packaging of the thermoelectric device and external connection of the electrode, and high-temperature oxidation resistance of the internal thermoelectric device. During vacuum welding, a closed space can be formed inside the thermoelectric device to achieve isolation and protection of the thermoelectric device from the air.

[0034] The thermoelectric power generation module further comprises a heat insulating material for heat insulating the space inside the packaging shell and between the N / P thermocouple pairs.

[0035] The N / P thermocouple pairs 7 and 8 may be one or more of thermoelectric materials such as skutterudite, bismuth telluride, half-Heusler, lead telluride, silicon germanium, Mg3(Sb / Bi)2, Mg2(Si / Sn), etc.

[0036] The first electrode is connected to the N / P thermocouple pair through the diffusion barrier layer 6 and the solder 5; the thermocouple is connected to the first copper-clad substrate through the diffusion barrier layer 6 and the solder 5.

[0037] The solder can be Cu-based solder, Ag-based solder or AuSn solder, etc. The solder includes high-temperature solder and low-temperature solder. The high-temperature solder is the solder for the high-temperature substrate end, and the low-temperature solder is the solder for the low-temperature substrate. Pb-Sn solder (low-temperature solder) is added to the solder.

[0038] Furthermore, the first copper-clad substrate 10 includes a first ceramic substrate, the first ceramic substrate includes the first surface and the second surface, the first copper-clad surface 11 includes the second surface and a first copper layer, and the first copper layer is covered on the second surface; the first copper layer and the second electrode 17 are separated by the first isolation zone 18.

[0039] The ceramic substrate material is aluminum nitride, aluminum oxide, silicon nitride, etc. with good insulation performance, and the upper and lower surfaces are covered with copper conductive layers. The first copper-clad substrate 10 has vertical through holes to connect the copper layers on the upper and lower surfaces to achieve vertical interconnection. The upper copper plate has a metal dam for sealing around the outside of the thermocouple arrangement. The bottom copper plate of the first copper-clad substrate 10 and the upper copper plate of the second copper-clad substrate are Figure 1 An isolation gap is set between the vertical through hole and the entire copper cladding layer.

[0040] Furthermore, the second copper-clad substrate includes a second ceramic substrate 13, the second ceramic substrate 13 includes a third surface and a fourth surface, the third surface is covered with a second copper layer to form a second copper-clad surface 12, a third electrode 19 is provided on the second copper-clad surface 12, the third electrode 19 is separated from the second copper-clad surface 12 by a second dividing strip 20, the first copper layer is connected to the second copper layer, the current generated by the temperature difference of the thermoelectric material flows from the first surface to the third surface through the through hole, and the third electrode is externally connected by a lead through a protrusion.

[0041] The double-layer vertically interconnected ceramic substrate is formed by high-temperature welding of two layers of double-sided copper-clad substrates. The upper surface of the first layer of double-sided copper-clad substrate 10 has copper electrode pads that connect the NP thermoelectric pairs 7 and 8 according to the design. There are gaps between the copper electrodes to avoid short circuits between devices. In addition, there are two lead-out copper electrodes with vertical through holes connected to the second layer of copper-clad substrate below to realize external connection of the copper electrodes. There is also a metal dam 9 surrounding the upper surface, which is used to connect the stamping shell 16 to achieve vacuum packaging. There are two copper electrode guide belts (the electrode guide belt is the second electrode 17) on the lower surface of the first layer of copper-clad substrate 10. An isolation belt is established around the copper electrode, and the entire area outside the isolation belt is covered with a copper layer for brazing connection with the second layer of copper-clad substrate. Compared with the first copper-clad substrate, the second copper-clad substrate has the same width as the first substrate, and has an extended length on the side of the guide belt (the guide belt refers to the third electrode 19, which is relatively longer than the second electrode 17: the first copper-clad substrate is bonded to the second copper-clad substrate, that is, the excess part of the second electrode and the third electrode is an extension of the length of the guide belt). The upper surface of the second copper-clad substrate and the lower surface of the first copper-clad substrate 10 are in the same way, and an isolation belt is established between the two electrodes. The area outside the isolation belt is covered with a copper layer to connect the upper surface. In addition, the third electrode 19 on the upper surface of the second copper-clad substrate extends beyond the overlap with the two substrates to realize the external connection of the electrode leads.

[0042] The gap and the isolation zone have the same function, but are located in different positions. The gap is located on the first surface, and the isolation zone is located on the third surface. The gap is used to isolate the small electrode, and the isolation zone is used to isolate the first copper layer from the second electrode 17.

[0043] The second copper-clad substrate is sequentially stacked with a third copper layer 2, a high-temperature end ceramic substrate 3 and a copper electrode 4 from top to bottom. The copper electrode 4 is welded to the diffusion barrier layer 6 through a solder 5.

[0044] Furthermore, a metal dam 9 is provided on the first surface, and the stamped shell 16 is encapsulated with the metal dam 9. The stamped shell 16 is a thin metal shell formed by stamping, and its material is generally a metal material with excellent ductility and high thermal conductivity such as stainless steel, Ni or aluminum alloy, and the outer edges of the metal stamped shell 16 are tightly matched with the metal dam 9 of the upper substrate at the low temperature end.

[0045] Furthermore, the first copper clad substrate 10 and the second copper clad substrate are brazed and sealed using low-temperature solder SnBi, Pb-Sn or are diffused welded using high-temperature pressure.

[0046] Furthermore, the thermally conductive buffer layer 1 is graphite carbon paper, located between the top of the stamped shell 16 and the copper layer on the upper surface of the high-temperature ceramic substrate, to achieve a stable heat transfer and stress buffering effect between the two. The diffusion barrier layer 6 is deposited or sintered on the high-temperature end surfaces of the N / P thermocouple pair 7 and 8, and the diffusion barrier layer 6 is made of TiAl, Nb, Cr, Fe or a high-temperature alloy material.

[0047] Furthermore, the N / P thermocouple pairs 7 and 8 are one or more of skutterudite, bismuth telluride, half-Heusler, lead telluride, silicon germanium, Mg3(Sb / Bi)2 and Mg2(Si / Sn).

[0048] Furthermore, the method for one-time welding packaging includes printing solder 5 on the double-layer vertically interconnected ceramic copper-clad substrate and the second copper-clad substrate respectively by screen printing, and then arranging the N / P thermocouple pairs 7 and 8 between the double-layer vertically interconnected ceramic copper-clad substrate and the second copper-clad substrate according to the layout design, and placing them in a vacuum welding furnace for one-time welding;

[0049] The stamped shell 16 material is covered to the first surface, the stamped shell 16 and the metal dam 9 are positioned and fitted, and then put into the vacuum welding furnace again for welding and packaging.

[0050] Furthermore, the atmosphere of the vacuum welding furnace is an inert atmosphere such as vacuum, nitrogen or argon, and the gas pressure is less than the atmospheric pressure.

[0051] Furthermore, solder packaging or laser packaging is adopted between the stamping shell 16 and the metal dam 9 .

[0052] Figure 1 The copper layer distribution diagram of the upper and lower surfaces of the first copper-clad substrate in the double-layer vertical interconnected ceramic substrate is shown in Figure 1As shown, the bottom surface of the first copper-clad surface 11 is covered with a whole copper layer for connecting the two layers of substrates, wherein 8 copper-clad through holes 15 are located on the two copper electrodes, namely the second electrode 17, on the lower surface, wherein the copper-clad through holes 15 penetrate the first copper-clad substrate 10, thereby realizing the electrode connection between the upper surface and the lower surface of the first copper-clad substrate 10. In addition, there is a circle of isolation belt, namely the first isolation belt 18, around the copper electrode, which is covered by a non-copper layer, isolating the copper electrode from the surrounding copper layer, thereby avoiding a short circuit when the two layers of ceramic substrates are combined.

[0053] Figure 2 is the copper layer distribution diagram on the upper surface of the second ceramic substrate in the vertical interconnected ceramic substrate, such as Figure 2 As shown, the second copper-clad surface 12 is covered with a copper layer, and solder is used to connect the two substrates. Figure 2 In the embodiment, the copper electrode, i.e., the third electrode 19, is used to weld the two layers of substrate device conduction electrodes together at high temperature, so that the current generated by the temperature difference of the thermoelectric material flows from the upper surface of the first copper-clad substrate 10 to the upper surface of the second layer through the copper-clad through hole 15, realizing the external connection of the copper electrode and providing conditions for the vacuum packaging inside the stamping shell 16. A second isolation zone 20 is still set on its surface to prevent short circuit when the two layers of substrate are welded together.

[0054] Figure 3 It is a three-dimensional structure diagram of a double-layer ceramic substrate, wherein the metal dam 9 is used to weld the first copper-clad substrate 10 and the stamping shell 16 together through high-temperature vacuum welding to vacuumize the interior.

[0055] Figure 4 This is a structural diagram of a thermoelectric power generation module. The materials represented by the numbers in the figure are, in order, a graphite carbon paper buffer layer 1 that provides heat transfer and stress buffering, a copper layer 2, a high-temperature end ceramic copper-clad substrate 3, a copper electrode (connected to a diffusion barrier layer 6 at high temperature through a solder 5 to connect the thermoelectric material to the substrate) 4, solder 5 (connecting the copper electrode to the diffusion barrier layer 6), a diffusion barrier layer 6, N / P thermocouple pairs 7 and 8, a first copper-clad substrate 10 at the low-temperature end, a second ceramic substrate 13 at the low-temperature end, and an upper surface of the second copper-clad substrate.

[0056] Figure 5 This is a vacuum packaging diagram of a thermoelectric power generation module. The function of the stamped shell 16 in the figure is to connect it with the metal dam 9 through high temperature when the entire device is in a vacuum state, so that the inside of the stamped shell 16 is in a vacuum state, and it can still play an antioxidant role when working at high temperatures under normal conditions.

[0057] Currently, thermoelectric power generation modules used in commercial and scientific research generally use a single-layer ceramic substrate combined with a thermoelectric pair to achieve device integration. This type of packaged module is generally exposed to the air, and the thermoelectric materials currently used are easily oxidized at high temperatures, which poses a huge challenge to the performance of the material and the long-term service stability of the material. The double-layer vertically interconnected ceramic substrate designed in this application realizes the vacuum external connection of the electrode, greatly simplifies the process difficulty of the vacuum electrode, and facilitates the system integration of the self-packaged power generation module; the stamped shell 16 and the ceramic substrate can be welded at high temperature, ensuring the closed protection state inside the stamped shell 16 and achieving high-temperature anti-oxidation.

[0058] Although the present application is described above with reference to specific embodiments, it should be understood by those skilled in the art that many modifications may be made to the configurations and details disclosed in the present application within the principles and scope disclosed in the present application. The scope of protection of the present application is determined by the appended claims, and the claims are intended to cover all modifications included in the equivalent literal meaning or scope of the technical features in the claims.

Claims

1. A self-packaged thermoelectric power generation module, characterized in that: The invention comprises a first copper-clad substrate, which is connected to a stamping shell to form a closed space, wherein the closed space comprises a heat-conducting buffer layer, a second copper-clad substrate, a diffusion barrier layer and an N / P thermocouple pair stacked in sequence, wherein the N / P thermocouple pair is connected to the first copper-clad substrate, and the first copper-clad substrate is a double-layer vertically interconnected ceramic copper-clad substrate, wherein the double-layer vertically interconnected ceramic copper-clad substrate comprises a first copper-clad substrate and a second copper-clad substrate connected to each other, wherein the first copper-clad substrate comprises a first surface and a first copper-clad surface, wherein a first electrode is arranged on the first surface, wherein the first electrode is connected to the N / P thermocouple pair, wherein a gap is arranged between the first electrodes, wherein a second electrode is arranged on the first copper-clad surface, wherein a first isolation zone is arranged outside the second electrode, and wherein the first copper-clad substrate and the second copper-clad substrate are connected by electrodes through through holes.

2. The self-packaged thermoelectric power generation module according to claim 1, characterized in that: The first copper-clad substrate includes a first ceramic substrate, the first ceramic substrate includes the first surface and the second surface, the first copper-clad surface includes the second surface and a first copper layer, the first copper layer covers the second surface; the first copper layer and the second electrode are separated by the first isolation zone.

3. The self-packaged thermoelectric power generation module according to claim 2, characterized in that: The second copper-clad substrate includes a second ceramic substrate, the second ceramic substrate includes a third surface and a fourth surface, the third surface is covered with a second copper layer to form a second copper-clad surface, a third electrode is arranged on the second copper-clad surface, the third electrode is separated from the second copper-clad surface by a second dividing strip, the first copper layer is connected to the second copper layer, the current generated by the temperature difference of the thermoelectric material flows from the first surface to the fourth surface through the through hole, and the third electrode is externally connected by a lead through a protrusion.

4. The self-packaged thermoelectric power generation module according to claim 3, characterized in that: A metal dam is disposed on the first surface, and the stamping shell is encapsulated with the metal dam.

5. The self-packaged thermoelectric power generation module according to any one of claims 1 to 4, characterized in that: The first copper-clad substrate and the second copper-clad substrate are brazed and sealed using low-temperature solder SnBi, Pb-Sn or are diffusely welded using high-temperature pressure.

6. The self-packaged thermoelectric power generation module according to claim 5, characterized in that: The thermally conductive buffer layer is graphite carbon paper, the diffusion barrier layer is deposited or sintered on the N / P thermocouple pair, and the diffusion barrier layer is made of TiAl, Nb, Cr, Fe or a high-temperature alloy material.

7. The self-packaged thermoelectric power generation module according to claim 6, characterized in that: The N / P thermocouple pair is one or more of skutterudite, bismuth telluride, half-Heusler, lead telluride, silicon germanium, Mg3(Sb / Bi)2 and Mg2(Si / Sn).

8. The method for preparing a self-packaged thermoelectric power generation module according to any one of claims 1 to 7, characterized in that: The method comprises printing solder on the double-layer vertically interconnected ceramic copper-clad substrate and the second copper-clad substrate respectively by screen printing, arranging the N / P thermocouple pair between the double-layer vertically interconnected ceramic copper-clad substrate and the second copper-clad substrate according to the layout design, and placing the thermocouple in a vacuum welding furnace for one-time welding; The stamped shell material is covered to the first surface, the stamped shell and the metal dam are positioned and fitted, and then placed in the vacuum welding furnace again for welding and packaging.

9. The method according to claim 8, characterized in that: The vacuum welding furnace atmosphere is vacuum, nitrogen or argon, and the gas pressure is less than the atmospheric pressure.

10. The method according to claim 8, characterized in that: Solder packaging or laser packaging is used between the stamping shell and the metal dam.

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