Substrate processing apparatus, electrode unit, method for manufacturing semiconductor device, and program

Abstract

The present invention provides a technique comprising: a processing chamber for processing a substrate; a plurality of first electrodes which are provided outside the processing chamber, are connected to a high-frequency power supply, and are configured so as to be folded back at the upper part; and a second electrode to which a reference potential is applied.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, an electrode unit, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] As a step in the manufacturing process of a semiconductor device (device), the following substrate processing is sometimes performed: the substrate is moved into a processing chamber of a substrate processing device, raw material gas and reaction gas are supplied into the processing chamber, and various films such as insulating films, semiconductor films, and conductor films are formed on the substrate, or various films are removed.

[0003] In mass-produced devices in which fine patterns are formed, a lower temperature is sometimes required in order to suppress diffusion of impurities or to enable use of materials with low heat resistance such as organic materials.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2007-324477 Summary of the invention

[0007] Problems to be solved by the invention

[0008] In order to solve such a problem, a substrate is generally treated using plasma, but it is sometimes difficult to uniformly treat a film.

[0009] The present disclosure provides a technique that enables more uniform substrate processing.

[0010] Means for solving problems

[0011] According to one aspect of the present disclosure, a technology is provided, comprising: a processing chamber that processes a substrate; a plurality of first electrodes that are disposed outside the processing chamber and connected to a high-frequency power supply and are configured to be folded back at the top; and a second electrode that is given a reference potential.

[0012] Effects of the Invention

[0013] According to the present disclosure, a technology capable of performing more uniform substrate processing can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 This is a schematic structural diagram of a vertical processing furnace of a substrate processing apparatus preferably used in an embodiment of the present disclosure, and is a diagram showing a processing furnace portion in a vertical cross section.

[0015] Figure 2 yes Figure 1 AA cross-sectional view of the substrate processing apparatus shown.

[0016] Figure 3(a) is a stereoscopic diagram of an electrode of an embodiment of the present invention being arranged on a quartz cover, (b) is a top view schematic diagram for showing the positional relationship among a heater, a quartz cover, an electrode, a protrusion of a fixed electrode, and a reaction tube of an embodiment of the present invention, (c) is a schematic diagram for showing the positional relationship among a heater, a quartz cover, an electrode, a protrusion of a fixed electrode, and a reaction tube in the AA section of (a), (d) is a schematic diagram for illustrating a structural example in which the first electrode of an embodiment of the present invention is integrally formed in a flat plate shape, and (e) is a schematic diagram for illustrating a structural example in which the first electrode of an embodiment of the present invention is formed in a divided shape by connecting two flat plate parts (vertical parts) using an upper part (connecting part).

[0017] Figure 4 (a) is a front view of an electrode according to an embodiment of the present disclosure, and (b) is a diagram for explaining how the electrode is fixed to a quartz cover.

[0018] Figure 5 yes Figure 1 The schematic configuration diagram of the controller in the substrate processing apparatus shown is a block diagram showing an example of a control system of the controller.

[0019] Figure 6 It means using Figure 1 A flow chart of an example of a substrate processing process of the substrate processing apparatus shown. DETAILED DESCRIPTION

[0020] The following mainly refers to Figures 1 to 4 One mode of the present disclosure is described. In addition, the drawings used in the following description are all schematic, and the size relationship of each element shown in the drawings, the ratio of each element, etc. may not be consistent with the actual situation. In addition, the size relationship of each element, the ratio of each element, etc. may not be consistent between multiple drawings.

[0021] (1) Structure of substrate processing apparatus

[0022] (Heating device)

[0023] like Figure 1 As shown, the processing furnace 202 has a heater 207 as a heating device (heating mechanism, heating unit) for heating the substrate (wafer) 200. The heater 207 is cylindrical and is vertically installed by being supported by a heater base (not shown) as a holding plate. In addition, the heater 207 is provided on the outside of the electrode fixing member 301 as an electrode fixing fixture described later. The heater 207 also functions as an activation mechanism (excitation unit) that activates (excites) the gas using heat as described later.

[0024] (Processing Room)

[0025] An electrode fixture 301 as an electrode fixture to be described later is arranged inside the heater 207, and an electrode 300 of a plasma generation unit to be described later is arranged inside the electrode fixture 301. In addition, a reaction tube 203 is arranged concentrically with the heater 207 inside the electrode 300. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2), silicon carbide (SiC), silicon nitride (SiN), and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold 209 is arranged concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS), and is formed into a cylindrical shape with an open upper end and a lower end. The upper end of the manifold 209 is engaged with the lower end of the reaction tube 203, and is configured to support the reaction tube 203. An O-ring 220a as a sealing member is provided between the manifold 209 and the reaction tube 203. By supporting the manifold 209 on the heater base, the reaction tube 203 is installed vertically. The reaction tube 203 and the manifold 209 mainly constitute a processing container (reaction container). A processing chamber 201 is formed in the hollow portion of the cylinder of the processing container. The processing chamber 201 is configured to accommodate wafers 200 as a plurality of substrates. The reaction tube 203 forms the processing chamber 201 for processing the wafers 200. In addition, the processing container is not limited to the above structure, and sometimes only the reaction tube 203 is referred to as a processing container.

[0026] (Gas supply unit)

[0027] In the processing chamber 201, nozzles 249a and 249b as the first and second supply parts are respectively arranged in a manner that penetrates the side wall of the manifold 209. The nozzles 249a and 249b are also referred to as the first and second nozzles, respectively. The nozzles 249a and 249b are made of, for example, a heat-resistant material such as quartz or SiC. The nozzles 249a and 249b are connected to the gas supply pipes 232a and 232b, respectively. In this way, two nozzles 249a and 249b and two gas supply pipes 232a and 232b are arranged in the processing container, so that a variety of gases can be supplied to the processing chamber 201. In addition, when only the reaction tube 203 is used as the processing container, the nozzles 249a and 249b can also be arranged to penetrate the side wall of the reaction tube 203.

[0028] Mass flow controllers (MFCs) 241a and 241b as flow controllers (flow control units) and valves 243a and 243b as on-off valves are respectively provided in order from the upstream side of the gas flow in the gas supply pipes 232a and 232b. Gas supply pipes 232c and 232d for supplying inert gas are respectively connected to the gas supply pipes 232a and 232b at positions downstream of the valves 243a and 243b. MFCs 241c and 241d and valves 243c and 243d are respectively provided in order from the upstream direction in the gas supply pipes 232c and 232d.

[0029] like Figure 1 , Figure 2 As shown, in the annular space between the inner wall of the reaction tube 203 and the wafer 200 when viewed from above, the nozzles 249a and 249b are respectively arranged to stand up from the lower part of the inner wall of the reaction tube 203 along the upper part toward the loading direction of the wafer 200. That is, the nozzles 249a and 249b are respectively arranged on the side of the end (peripheral part) of each wafer 200 carried into the processing chamber 201 and perpendicular to the surface (flat surface) of the wafer 200. Gas supply holes 250a and 250b for supplying gas are respectively arranged on the side of the nozzles 249a and 249b. The gas supply hole 250a opens in a manner toward the center of the reaction tube 203, and can supply gas toward the wafer 200. A plurality of gas supply holes 250a and 250b are respectively arranged from the lower part to the upper part of the reaction tube 203.

[0030] Thus, in this embodiment, the gas is delivered through the nozzles 249a and 249b arranged in the following space: a longitudinal space defined by the inner wall of the side wall of the reaction tube 203 and the ends (peripheral portions) of the plurality of wafers 200 arranged in the reaction tube 203, which is an annular shape when viewed from above, that is, a cylindrical space. In addition, the gas is ejected into the reaction tube 203 from the gas supply holes 250a and 250b opened in the nozzles 249a and 249b, respectively, near the wafer 200. In addition, the main flow of the gas in the reaction tube 203 is set in a direction parallel to the surface of the wafer 200, that is, in a horizontal direction. By setting such a structure, the gas can be uniformly supplied to each wafer 200, and the uniformity of the film thickness of the film formed on each wafer 200 can be improved. The gas flowing on the surface of the wafer 200, that is, the residual gas after the reaction, flows toward the exhaust port, that is, the exhaust pipe 231 described later. However, the flow direction of the residual gas is appropriately determined according to the position of the exhaust port and is not limited to the vertical direction.

[0031] A raw material (raw material gas) is supplied into the processing chamber 201 from the gas supply pipe 232 a via the MFC 241 a , the valve 243 a , and the nozzle 249 a .

[0032] For example, a gas containing oxygen (O) is supplied as a reactant (reaction gas) from the gas supply pipe 232 b through the MFC 241 b , the valve 243 b , and the nozzle 249 b into the processing chamber 201 .

[0033] An inert gas is supplied into the processing chamber 201 from the gas supply pipes 232 c and 232 d via the MFCs 241 c and 241 d , the valves 243 c and 243 d , and the nozzles 249 a and 249 b , respectively.

[0034] The raw material supply system as the first gas supply system is mainly composed of the gas supply pipe 232a, MFC241a, and valve 243a. The reactant supply system (reactant gas supply system) as the second gas supply system is mainly composed of the gas supply pipe 232b, MFC241b, and valve 243b. The inert gas supply system is mainly composed of gas supply pipes 232c, 232d, MFC241c, 241d, and valves 243c and 243d. The raw material supply system, the reactant supply system, and the inert gas supply system are also referred to as the gas supply system (gas supply unit).

[0035] (Substrate Support)

[0036] like Figure 1 As shown, the wafer boat 217, which is a substrate support (substrate holder) for loading and holding a plurality of substrates, is configured to support and hold a plurality of wafers 200, for example, 25 to 200, in a horizontal posture and arranged in a vertical direction with their centers aligned with each other, in multiple layers, that is, the wafers 200 are arranged at intervals. The wafer boat 217 is made of, for example, a heat-resistant material such as quartz or SiC. Insulating plates 218, for example, made of a heat-resistant material such as quartz or SiC, are supported in multiple layers at the bottom of the wafer boat 217. With this structure, it is difficult for heat from the heater 207 to be transferred to the sealing cover 219 side. However, the present embodiment is not limited to such a method. For example, instead of providing the insulating plate 218 at the bottom of the wafer boat 217, an insulating cylinder, which is a cylindrical member made of a heat-resistant material such as quartz or SiC, may be provided.

[0037] (Plasma generation unit)

[0038] Next, use Figures 1 to 4 The plasma generating unit will be described.

[0039] An electrode 300 for generating plasma is provided outside the reaction tube 203, i.e., outside the processing container (processing chamber 201). By applying power to the electrode 300, the gas inside the reaction tube 203, i.e., inside the processing container (processing chamber 201) can be turned into plasma and excited, i.e., the gas can be excited into a plasma state. Figure 2As shown, capacitively coupled plasma (CCP) is used to generate plasma inside the reaction tube 203 which is a vacuum partition made of quartz or the like when a reaction gas is supplied.

[0040] Specifically, if Figure 2 As shown, an electrode 300 and an electrode fixture 301 for fixing the electrode 300 are arranged between the heater 207 and the reaction tube 203. The electrode fixture 301 is arranged inside the heater 207, the electrode 300 is arranged inside the electrode fixture 301, and the reaction tube 203 is arranged inside the electrode 300.

[0041] In addition, if Figure 1 , Figure 2 As shown, in the annular space between the inner wall of the heater 207 and the outer wall of the reaction tube 203 when viewed from above, an electrode 300 and an electrode fixture 301 are respectively provided in a manner extending from the lower part of the outer wall of the reaction tube 203 along the upper part in the arrangement direction of the wafer 200. The electrode 300 is arranged in parallel with the nozzles 249a and 249b. The electrode 300 and the electrode fixture 301 are arranged and configured in a concentric circle with the reaction tube 203 and the heater 207 when viewed from above and in a non-contact manner with the heater 207. The electrode fixture 301 is composed of an insulating material (insulator). The electrode fixture 301 is provided to cover at least a portion of the electrode 300 and the reaction tube 203, and therefore, the electrode fixture 301 can also be called a cover (quartz cover, insulating wall, insulating plate) or a cross-section arc cover (cross-section arc body, cross-section arc wall).

[0042] like Figure 2 As shown, a plurality of electrodes 300 are provided, and these plurality of electrodes 300 are fixedly provided on the inner wall of the electrode fixing member 301. More specifically, as Figure 4 As shown, a protrusion (hook) 310 capable of hooking the electrode 300 is provided on the inner wall surface of the electrode fixing member 301, and an opening 305, a through hole through which the protrusion 310 can be inserted, is provided on the electrode 300. By hooking the electrode 300 on the protrusion 310 provided on the inner wall surface of the electrode fixing member 301 through the opening 305, the electrode 300 can be fixed to the electrode fixing member 301. Figure 3 In FIG. 1 , an example is shown in which two or three openings 305 are provided for one electrode 300, and one electrode 300 is fixed by hooking two or three protrusions 310, that is, an example in which one electrode is fixed at two or three locations. Figure 2 In FIG. 1 , nine electrodes 300 are fixed to one electrode fixing member 301, and the structure (unit) is composed of two groups, and three electrodes 300-1 (in Figure 2The cross section of FIG. 1 is an example of a structure (unit) in which six electrodes 300 - 1 and three electrodes 300 - 2 are fixed to one electrode fixing member 301 .

[0043] The electrode 300 is made of an oxidation-resistant material such as nickel (Ni). The electrode 300 can also be made of a metal material such as SUS, aluminum (Al), and copper (Cu), but by being made of an oxidation-resistant material such as Ni, the deterioration of the electrical conductivity can be suppressed, and the reduction in the plasma generation efficiency can be suppressed. In addition, the electrode 300 can also be made of a Ni alloy material to which Al is added. In this case, an oxide film, i.e., an aluminum oxide film (AlO film), having high heat resistance and corrosion resistance can also be formed on the outermost surface of the electrode 300. The AlO film formed on the outermost surface of the electrode 300 acts as a protective film (blocking film, barrier film), which can suppress the progress of degradation inside the electrode 300. As a result, the reduction in the plasma generation efficiency caused by the reduction in the electrical conductivity of the electrode 300 can be further suppressed. The electrode fixing member 301 is made of an insulating substance (insulator), such as a heat-resistant material such as quartz or SiC. The material of the electrode fixing member 301 is preferably the same as the material of the reaction tube 203.

[0044] like Figure 2 and Figure 3 As shown in (a) to (e) of FIG. 1 , the electrode 300 is composed of a thin plate (flat plate) having a rectangular shape or an inverted U shape that is long in the arrangement direction of the wafer 200. The electrode 300 includes a first electrode (first electrode, hot electrode) 300-1 connected to a high frequency power source 320 via a matching device (not shown), and a second electrode (second electrode, ground electrode) 300-2 having a reference potential of 0 V and grounded. Figure 2 and Figure 3 As shown in (c), they are arranged at equal intervals in the AA section. By applying high-frequency power from the high-frequency power supply 320 to the first electrode (hot electrode) 300-1 and the second electrode (ground electrode) 300-2 via the matching device, plasma is generated in the area between the first electrode 300-1 and the second electrode 300-2. The area where the plasma is generated is also called a plasma generation area. Figure 1 As shown, the electrode 300 is arranged in a vertical direction (vertical direction, direction of loading the substrate) relative to the processing container. Figures 2 to 3As shown in (c), the electrodes 300 are arranged in an arc shape in the AA cross section when viewed from above, and are arranged at equal intervals, that is, the distances (gaps) between adjacent electrodes 300 are equal. In addition, the electrodes 300 are arranged in a substantially arc shape in a plan view along the outer wall of the reaction tube 203 between the reaction tube 203 and the heater 207, for example, fixedly arranged on the inner wall surface of the electrode fixing member 301 formed in an arc shape with a central angle of 30 degrees or more and 240 degrees or less. In addition, as described above, the electrodes 300 are arranged in parallel with the nozzles 249a and 249b.

[0045] like Figure 3 As shown in (a), (d), and (e), the inverted U-shaped first electrode (hot electrode) 300-1 can be regarded as a flat plate-shaped electrode structure obtained by electrically connecting the upper portions of two (or more) first electrodes (hot electrodes) 300-1 of different lengths. The long side direction of the first electrode (hot electrode) 300-1 and the second electrode (ground electrode) 300-2 is arranged in the loading direction of the wafer 200.

[0046] like Figure 3 As shown in (d), the first electrode (hot electrode) 300-1 in an inverted U shape can be formed by an integrally formed flat plate shape E. In addition, as Figure 3 As shown in (e), the inverted U-shaped first electrode (hot electrode) 300-1 may be a split shape in which two flat plate-shaped flat plate members (vertical members) B and D of different lengths are connected by a flat plate-shaped upper member (connecting member) C. That is, the inverted U-shaped first electrode (hot electrode) 300-1 may also be regarded as a U-shaped folded portion obtained by connecting the upper portions of two (plural) first electrodes (hot electrodes) 300-1 (B, D) of different lengths using an upper member (connecting member) C. By setting it as a split shape, the plasma electric field can be easily adjusted by changing the length of one short flat plate member (the length of the other electrode of the inverted U-shaped first electrode (hot electrode) 300-1 described later).

[0047] In addition, the first electrode (hot electrode) 300-1 in an inverted U shape is configured to be folded back at the top relative to the loading direction of the wafer 200. The first electrode (hot electrode) 300-1 in an inverted U shape connected to the high-frequency power supply 320 and configured to be folded back at the top, the second electrode (ground electrode) 300-2 with a reference potential of 0V and grounded, and the electrode fixing member 301 can be regarded as an electrode unit. Figure 2 As shown, it is preferred that the electrode unit is arranged at a position away from the nozzles 249a, 249b and the exhaust pipe 231. Figure 2, an example is shown in which two electrode units are arranged to face each other (face to face) across the center of the wafer 200 (reaction tube 203) avoiding the nozzles 249a, 249b and the exhaust pipe 231. Figure 2 2 shows an example in which two electrode units are arranged to be linearly symmetrical, i.e. symmetrical, when viewed from above. By arranging the electrode units in this way, the nozzles 249a, 249b, the temperature sensor 263 and the exhaust pipe 231 can be arranged outside the plasma generation area in the processing chamber 201, and damage to these components by plasma, consumption and breakage of these components, and generation of particles from these components can be suppressed.

[0048] like Figure 3 As shown in (a), the second electrode (Ground electrode) 300-2 is also set to a flat electrode structure. The length of one electrode of the inverted U-shaped first electrode (Hot electrode) 300-1 is the same as the length of the second electrode (Ground electrode) 300-2. The length of the other electrode of the inverted U-shaped first electrode (Hot electrode) 300-1 is shorter than the length of the second electrode (Ground electrode) 300-2. In addition, the total length of one electrode and the length of the other electrode of the inverted U-shaped first electrode (Hot electrode) 300-1 is longer than the length of the second electrode (Ground electrode) 300-2. The lower part of the longer electrode of the inverted U-shaped first electrode (Hot electrode) 300-1 is connected to the high-frequency power supply 320 via a matching device not shown in the figure.

[0049] In addition, if Figure 3 As shown in (a), the first inverted U-shaped first electrode (hot electrode) 300-1, the first second electrode (ground electrode) 300-2, the second inverted U-shaped first electrode (hot electrode) 300-1, the second second electrode (ground electrode) 300-2, the third inverted U-shaped first electrode (hot electrode) 300-1, the third second electrode (ground electrode) 300-2, the fourth inverted U-shaped first electrode (hot electrode) 300-1, and the fourth second electrode (ground electrode) 300-2 are arranged from the right side of the figure along the left side. That is, the second electrode (ground electrode) 300-2 is arranged between the inverted U-shaped first electrodes (hot electrodes) 300-1. Moreover, the inverted U-shaped first electrode (hot electrode) 300-1 and the second electrode (ground electrode) 300-2 are arranged alternately. When observing the AA cross-sectional portion, multiple first electrodes 300-1 and second electrodes 300-2 are arranged alternately. Therefore, as shown in Figure 3 As shown in (a), the number of the inverted U-shaped first electrodes 300 - 1 is the same as the number of the second electrodes 300 - 2 .

[0050] In addition, if Figure 3 As shown in (a), the length of the other electrode of the first electrode (hot electrode) 300-1 is different in the first to fourth inverted U-shaped first electrodes (hot electrodes) 300-1. Therefore, the areas of the first to fourth inverted U-shaped first electrodes (hot electrodes) 300-1 are different.

[0051] Here, in the present embodiment, when there is no need to distinguish and explain in particular, it is described as the electrode 300 for description.

[0052] like Figure 2 As shown, the electrode 300 (300-1, 300-2) is arranged in a substantially arc shape along the outer wall of the reaction tube 203 between the reaction tube 203 and the heater 207 (i.e., inside the heating portion 207 and outside the reaction tube 203), for example, fixedly arranged on the inner wall surface of a quartz cover described later formed in an arc shape with a center angle of 30 degrees or more and 240 degrees or less. Here, if the center angle is set to less than 30 degrees, the amount of plasma generated is small. In addition, if the center angle is set to an angle exceeding 240 degrees, the heat energy from the heater 207 is blocked, which has an adverse effect on the wafer processing. In addition, if the center angle is set to an angle exceeding 240 degrees, it is difficult to arrange the nozzles 249a, 249b and, for example, a cascade TC (thermocouple) as the temperature sensor 263, avoiding the plasma generation area. If the nozzles 249a, 249b, etc. are arranged in the plasma generation region, particles (PC) are easily generated from the nozzles 249a, 249b, etc. In addition, if the cascade TC is also arranged in the plasma generation region, discharge from the TC line causes damage to the wafer 200 or film non-uniformity. Therefore, by setting the central angle to be greater than 30 degrees and less than 240 degrees, it is possible to ensure the plasma generation amount and suppress the heat energy interruption from the heater 207 while performing wafer processing.

[0053] A high frequency power of, for example, 25 MHz to 35 MHz, more specifically, 27.12 MHz, is input to the electrode 300 from the high frequency power supply 320 via a matching device (not shown), thereby generating plasma (active species) 302 in the reaction tube 203. The plasma generated in this way can supply the plasma active species 302 for substrate processing from the periphery of the wafer 200 to the surface of the wafer 200. The high frequency power is supplied from the lower side (lower end) of the electrode 300. The plasma generating unit is mainly composed of the electrode 300 and the high frequency power supply 320. The matching device (not shown) and the electrode fixing member 301 as an electrode fixing fixture can also be included, and it can be considered as a plasma generating unit.

[0054] In addition, if Figure 4As shown in (a) of FIG. 1 , the electrode 300 is formed with a notch portion 305 composed of a circular notch portion 303 through which a protrusion head portion 311 described later passes and a sliding notch portion 304 for sliding a protrusion shaft portion 312 .

[0055] In order to have sufficient strength and not significantly reduce the wafer heating efficiency based on the heat source, the electrode 300 is preferably configured to have a thickness of 0.1 mm to 1 mm and a width of 5 mm to 30 mm. Figure 2 , Figure 3 In the portion shown in (c), the electrode 300 (the second electrode (Ground electrode 300-2, the two first electrodes (Hot electrodes) 300-1 of different lengths in the inverted U-shaped first electrode (Hot electrode) 300-1 respectively) can be formed with a thickness of not less than 0.1 mm and not more than 1 mm, and a width of not less than 5 mm and not more than 30 mm. In addition, it is preferred that it has a bending structure as a deformation suppression portion, which is used to prevent deformation caused by heating by the heater 207. In this case, the electrode 300 is arranged between the quartz reaction tube 203 and the heater 207, so in terms of the limitation of this space, a bending angle of 90° to 175° is appropriate. A film based on thermal oxidation is formed on the surface of the electrode, which is sometimes peeled off due to thermal stress to produce particles, so excessive bending needs to be paid attention to.

[0056] In the vertical substrate processing apparatus, the frequency of the high frequency power source 320 is set to 27.12 MHz, for example, and the electrode 300 having an electrode width of 10 mm and a thickness of 1 mm is used, and the outer wall of the tubular reaction tube 203 is formed. Figure 3 As shown in (c), a plurality of first electrodes 300-1 to which an arbitrary potential is applied and a second electrode 300-2 to which a reference potential is applied are arranged in the order of first electrode 300-1, first electrode 300-1, second electrode 300-2, first electrode 300-1, first electrode 300-1, ..., with an electrode spacing (center-to-center distance) of 20 mm, thereby generating a CCP mode plasma. That is, the electrode 300 continuously arranges two first electrodes 300-1, and is arranged so that one second electrode 300-2 is sandwiched between the two sets of first electrodes 300-1 arranged continuously. The length of one electrode of the inverted U-shaped first electrode (hot electrode) 300-1 and the length of the second electrode 300-2 are both set to 1 m, for example. The length of the other electrode of the inverted U-shaped first electrode (hot electrode) 300-1 is shorter than 1 m, for example.

[0057] If the loading range of the wafers 200 to the wafer boat 217 is configured to be 8% or more relative to the output wavelength of the high-frequency power supply 320, the biased voltage distribution of the standing wave (cosine curve) formed by the superposition of the traveling wave and the reflected wave in the longitudinal direction of the electrode 300 is affected, and the density distribution of the plasma 302 also shows bias (imbalance). Therefore, the film thickness and film quality that are correlated with the density distribution of the plasma 302 show non-uniformity between the wafers 200. For example, when the length of the electrode 300 in the wafer loading area exceeds a certain value (about 1 / 10 of the wavelength), the influence of the standing wave becomes significant, and there may be a situation in which the plasma distribution in the longitudinal direction is biased, such that the plasma density at the upper part of the electrode 300 is higher than the plasma density at the lower part of the electrode 300.

[0058] As a method for solving such a problem, there is a method as follows: since the reflection coefficient changes due to the adjustment of the length of the front end of the electrode 300, the phase difference between the traveling wave and the reflected wave changes, and the voltage distribution of the standing wave in the wafer region is shifted downward. By using this method, the bias of the voltage distribution can be improved, the density distribution of the plasma 302 with good uniformity can be ensured, and the uniformity of the film thickness or film quality between the wafers 200 can be improved.

[0059] In this embodiment, in order to eliminate the bias in plasma distribution, the shape (length or area) of the first electrode (hot electrode) 300-1 is adjusted so that the plasma distribution in the vertical direction of the loading area of ​​the wafer 200 is uniform. The characteristics of the electrode 300 are summarized as follows. (1) As described above, the first electrode (hot electrode) 300-1 has a fold at the top. As a result, the voltage from the front end becomes higher and the electric field becomes stronger. The length is adjusted so that the front end of the fold is located in a weak electric field. (2) A plurality of first electrodes (hot electrodes) 300-1 and a plurality of second electrodes (ground electrodes) 300-2 are provided, each folded at the top. (3) The second electrode (ground electrode) 300-2 is arranged between the first electrode (hot electrode) 300-1. (4) The first electrode (hot electrode) 300-1 and the second electrode (ground electrode) 300-2 are arranged alternately. (5) The number of first electrodes (hot electrodes) 300-1 and the number of second electrodes (ground electrodes) 300-2 are 1:1 (same number). (6) The area of ​​the first electrode (hot electrode) 300-1 is, for example, 1.5 times or more the area of ​​the second electrode (ground electrode) 300-2. (7) The first electrode (hot electrode) 300-1 has two or more types (different lengths or different areas).

[0060] Here, it is preferred that the pressure in the furnace during substrate processing is controlled within a range of 2 Pa or more and 300 Pa or less. This is because, when the pressure in the furnace is lower than 2 Pa, the mean free path of the gas molecules becomes longer than the Debye length of the plasma, and the plasma directly hitting the furnace wall becomes significant, making it difficult to suppress the generation of particles. In addition, when the pressure in the furnace is higher than 300 Pa, the plasma generation efficiency is saturated, so even if the reaction gas is supplied, the amount of plasma generated does not change, and the reaction gas is consumed in vain. At the same time, the mean free path of the gas molecules becomes shorter, which leads to a decrease in the transport efficiency of the plasma active species reaching the wafer.

[0061] (Electrode Fixing Fixture)

[0062] Next, use Figure 3 to Figure 4 The electrode fixing member 301 serving as an electrode fixing fixture for fixing the electrode 300 will be described. Figure 3 (a), (b), (c), Figure 4 As shown in (a) and (b), a plurality of electrodes 300 are provided, and the cutouts 305 thereof are hooked on the protrusions 310 provided on the inner wall surface of the curved electrode fixing fixture, i.e., the electrode fixing member 301, so that the electrodes 300 are slidably fixed, and the electrodes 300 are integrated with the electrode fixing member 301 into a unit (hook-type electrode unit) and provided on the outer periphery of the reaction tube 203. Here, the electrodes 300 and the electrode fixing fixture, i.e., the electrode fixing member 301, are collectively referred to as an electrode fixing unit. In addition, as materials of the electrode fixing member 301 and the electrodes 300, quartz and nickel alloy are used, respectively.

[0063] Preferably, the electrode fixture 301 is configured to have a thickness in the range of 1 mm to 5 mm so as to have sufficient strength and not significantly reduce the wafer heating efficiency by the heater 207. If the thickness of the electrode fixture 301 is less than 1 mm, the specified strength with respect to the weight of the electrode fixture 301 or temperature changes cannot be obtained. If the thickness is greater than 5 mm, the heat energy radiated from the heater 207 is absorbed, and therefore, the heat treatment of the wafer 200 cannot be properly performed.

[0064] In addition, the electrode fixing jig 301 has a plurality of protrusions 310 as nail-shaped fixing parts for fixing the electrode 300 on the reaction tube side, that is, the inner wall surface. The protrusion 310 is composed of a protrusion head 311 and a protrusion shaft 312. The maximum width of the protrusion head 311 is smaller than the diameter of the circular cutout 303 of the cutout 305 of the electrode 300, and the maximum width of the protrusion shaft 312 is smaller than the width of the sliding cutout 304. The cutout 305 of the electrode 300 is in a keyhole-like shape, and the sliding cutout 304 can guide the protrusion shaft 312 when sliding, and the protrusion head 311 is a structure that does not fall off the sliding cutout 304. That is, it can be said that the electrode fixing jig has a fixing part, and the fixing part has a front end, that is, a protrusion head 311, which prevents the electrode 300 from falling off from the protrusion shaft 312, which is a columnar part that is locked. In addition, the shapes of the cutout portion 305 and the protruding head 311 are obviously not limited to any of the above as long as the electrode 300 can be fixed to the electrode fixing member 301. Figure 3 , 4 For example, the protruding head 311 may have a convex shape like a hammer or a thorn.

[0065] In order to separate the electrode fixing member 301 or the reaction tube 203 from the electrode 300 by a certain distance, an elastic body such as a spacer or a spring may be provided between the electrode fixing member 301 or the electrode 300, or they may have a structure that is integrated with the electrode fixing member 301 or the electrode 300. Figure 4 The spacer 330 shown in (b) is integrally formed with the electrode fixing member 301. In order to make the distance between the two constant and fixed, it is effective to have a plurality of the spacers 330 for one electrode.

[0066] In order to obtain high substrate processing capability at a substrate temperature of 500° or less, the occupancy rate of the electrode fixture 301 is set to a substantially circular arc shape with a central angle of 30° or more and 240° or less. In addition, in order to avoid the generation of particles, it is preferred to avoid the arrangement of the exhaust pipe 231, the nozzles 249a, 249b, etc., which are exhaust ports. That is, the electrode fixture 301, which is an electrode fixture, is arranged on the periphery of the reaction tube 203 other than the position where the nozzles 249a, 249b and the exhaust pipe 231 are arranged. The nozzles 249a, 249b are gas supply units arranged in the reaction tube 203, and the exhaust pipe 231 is a gas exhaust unit. In this embodiment, two electrode fixtures 301 with a central angle of 110° are arranged symmetrically.

[0067] (Spacer)

[0068] then, Figure 4(a) and (b) show a spacer 330 for fixing the electrode 300 to the surface of the electrode fixing fixture, that is, the electrode fixing part 301, and the outer wall of the reaction tube 203 at a certain distance. For example, the spacer 330 is made of a cylindrical quartz material and integrated with the electrode fixing part 301, and the electrode 300 is fixed to the electrode fixing part 301 by contacting with the electrode 300. As long as the electrode 300 can be fixed to the electrode fixing part 301 and the reaction tube 203 at a certain distance, the spacer 330 can be in any form and can be integrated with either the electrode 300 or the electrode fixing part 301. For example, the spacer 330 can be made of a semi-cylindrical quartz material and integrated with the electrode fixing part to fix the electrode 300, and the spacer 330 can also be a metal plate such as SUS and integrated with the electrode to fix the electrode 300. Since the electrode fixing jig and the spacer are provided on the quartz cover, the positioning of the electrode 300 becomes easy, and in addition, when the electrode 300 is deteriorated, only the electrode 300 can be replaced, so the cost is reduced. In addition, the spacer 330 generates a pressing force in the direction of the protruding head 311 as the above-mentioned front end portion through the contact surface with the electrode 300, thereby preventing the electrode 300 from falling off from the electrode fixing member 301. Here, the spacer 330 can be included in the above-mentioned electrode fixing unit.

[0069] (Exhaust section)

[0070] like Figure 1 As shown, an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201 is provided in the reaction tube 203. The exhaust pipe 231 is connected to a vacuum pump 246 as a vacuum exhaust device via a pressure sensor 245 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as an exhaust valve (pressure adjustment unit). The APC valve 244 is a valve configured as follows: by opening and closing the valve in a state where the vacuum pump 246 is operated, the vacuum exhaust in the processing chamber 201 can be performed and the vacuum exhaust can be stopped, and by adjusting the valve opening according to the pressure information detected by the pressure sensor 245 in a state where the vacuum pump 246 is operated, the pressure in the processing chamber 201 can be adjusted. The exhaust system is mainly composed of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. It is also conceivable to include the vacuum pump 246 in the exhaust system. The exhaust pipe 231 is not limited to the case where it is provided in the reaction tube 203, and can also be provided in the manifold 209 like the nozzles 249a and 249b.

[0071] (Peripheral devices)

[0072] A sealing cover 219 as a furnace port cover body is provided below the manifold 209, which can hermetically seal the lower end opening of the manifold 209. The sealing cover 219 is configured to abut against the lower end of the manifold 209 from the vertical lower side. The sealing cover 219 is made of metal such as SUS, for example, and is formed in a disc shape. An O-ring 220b as a sealing member abutting against the lower end of the manifold 209 is provided on the upper surface of the sealing cover 219.

[0073] A rotating mechanism 267 for rotating the wafer boat 217 is provided on the side of the sealing cover 219 opposite to the processing chamber 201. The rotating shaft 255 of the rotating mechanism 267 passes through the sealing cover 219 and is connected to the wafer boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer boat 217. The sealing cover 219 is configured to be raised and lowered in the vertical direction by a wafer boat elevator 115 as an elevating mechanism vertically provided outside the reaction tube 203. The wafer boat elevator 115 is configured to be able to carry the wafer boat 217 into and out of the processing chamber 201 by raising and lowering the sealing cover 219.

[0074] The boat elevator 115 is configured as a conveying device (conveying mechanism) for conveying the boat 217, i.e., the wafer 200, to and from the processing chamber 201. In addition, a gate 219s as a furnace cover body is provided below the manifold 209, which can airtightly close the lower end opening of the manifold 209 while the sealing cover 219 is lowered by the boat elevator 115. The gate 219s is made of metal such as SUS, for example, and is formed in a disc shape. An O-ring 220c as a sealing member abutting against the lower end of the manifold 209 is provided on the upper surface of the gate 219s. The opening and closing action (lifting action, rotation action, etc.) of the gate 219s is controlled by the gate opening and closing mechanism 115s.

[0075] A temperature sensor 263 as a temperature detector is provided inside the reaction tube 203. By adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263, the temperature inside the processing chamber 201 becomes a desired temperature distribution. The temperature sensor 263 is provided along the inner wall of the reaction tube 203, similarly to the nozzles 249a and 249b.

[0076] (Control device)

[0077] Next, use Figure 5 The control device will be described. Figure 5 yes Figure 1 The schematic diagram of the controller in the substrate processing apparatus shown in FIG. 1 is a block diagram showing an example of a control system of the controller. Figure 5As shown, the controller 121 as a control unit (control device) is configured as a computer having a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. The controller 121 is connected to an input / output device 122 configured as a touch panel, etc.

[0078] The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), etc. A control program for controlling the actions of the substrate processing device, a process recipe that records the process or conditions of the film forming process described later, etc. are stored in the storage device 121c in a readable manner. The process recipe is a combination of processes that enable the controller 121 to perform various processes (film forming processes) described later to obtain a specified result, and functions as a program. Hereinafter, process recipes, control programs, etc. are also collectively referred to as programs. In addition, process recipes are also referred to as processes for short. When the term "program" is used in this specification, there is a case where only a process body is included, a case where only a control program body is included, or a case where both are included. RAM121b is configured as a storage area (work area) for temporarily holding programs, data, etc. read by CPU121a.

[0079] The I / O port 121d is connected to the above-mentioned MFC241a~241d, valves 243a~243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, rotation mechanism 267, wafer boat elevator 115, gate opening and closing mechanism 115s, high-frequency power supply 320, etc.

[0080] The CPU 121a is configured to read out a control program from the storage device 121c and execute it, and to read out a recipe from the storage device 121c according to input of an operation command from the input / output device 122. The CPU 121a is configured to control the rotation mechanism 267, the flow rate adjustment operation of various gases by the MFCs 241a to 241d, the opening and closing operation of the valves 243a to 243d, the opening and closing operation of the APC valve 244 and the pressure adjustment operation by the APC valve 244 according to the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 according to the temperature sensor 263, the forward and reverse rotation of the wafer boat 217 by the rotation mechanism 267, the rotation angle and the rotation speed adjustment operation, the lifting operation of the wafer boat 217 by the wafer boat elevator 115, the opening and closing operation of the gate 219s by the gate opening and closing mechanism 115s, the power supply of the high frequency power source 320, and the like in accordance with the contents of the read recipe.

[0081] The controller 121 can be constructed by installing the above-mentioned program stored in an external storage device (for example, a magnetic disk such as a hard disk, an optical disk such as a CD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 123 on a computer. The storage device 121c and the external storage device 123 are configured as a computer-readable storage medium. Hereinafter, they are also collectively referred to as storage media. When the term storage medium is used in this specification, there is a case where only the storage device 121c monomer is included, a case where only the external storage device 123 monomer is included, or a case where both are included. In addition, instead of using the external storage device 123, a communication means such as the Internet or a dedicated line can be used to provide the program to the computer.

[0082] (2) Substrate processing steps

[0083] use Figure 6 A manufacturing method of a process example in which a film is formed on a substrate as one of the steps in the manufacturing process of a semiconductor device (element) using the above-mentioned substrate processing apparatus will be described. Figure 6 It means using Figure 1 1. In the following description, the operation of each unit constituting the substrate processing apparatus is controlled by the controller 121.

[0084] In this specification, for convenience, sometimes the following expressions are used: Figure 6 The sequence of film forming processes is shown.

[0085] (Move-in step: S1)

[0086] When a plurality of wafers 200 are loaded (wafer loading) into the wafer boat 217, the gate 219s is moved by the gate opening and closing mechanism 115s, and the lower end opening of the manifold 209 is opened (gate opening). Figure 1 As shown, the boat 217 supporting a plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0087] (Pressure / temperature adjustment step: S2)

[0088] The vacuum pump 246 performs vacuum exhaust (decompression exhaust) so that the interior of the processing chamber 201 reaches a desired pressure (vacuum degree). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled (pressure adjusted) based on the measured pressure information. The vacuum pump 246 is kept in a state of being always in operation at least until the film forming step described later is completed.

[0089] In addition, heating is performed by the heater 207 so that the temperature in the processing chamber 201 reaches a desired temperature. At this time, the power supply to the heater 207 is feedback-controlled (temperature adjusted) based on the temperature information detected by the temperature sensor 263 so that the temperature distribution in the processing chamber 201 reaches a desired temperature. The heating in the processing chamber 201 by the heater 207 is continued at least until the film forming step described later is completed. However, in the case where the film forming step is performed at a temperature below room temperature, the heating in the processing chamber 201 by the heater 207 may not be performed. In addition, when only processing at such a temperature is performed, the heater 207 is not required, and the heater 207 may not be provided in the substrate processing device. In this case, the structure of the substrate processing device can be simplified.

[0090] Next, the rotation of the wafer boat 217 and the wafers 200 by the rotation mechanism 267 is started. The rotation of the wafer boat 217 and the wafers 200 by the rotation mechanism 267 is continued at least until the film forming step described later is completed.

[0091] (Film forming steps: S3, S4, S5, S6)

[0092] Thereafter, the film forming step is performed by sequentially executing steps S3 , S4 , S5 , and S6 .

[0093] (Raw material gas supply steps: S3, S4)

[0094] In step S3 , a source gas is supplied to the wafer 200 in the processing chamber 201 .

[0095] The valve 243a is opened to allow the raw material gas to flow into the gas supply pipe 232a. The raw material gas is flow-regulated by the MFC 241a, supplied into the processing chamber 201 from the gas supply hole 250a via the nozzle 249a, and exhausted from the exhaust pipe 231. At this time, the raw material gas is supplied to the wafer 200. At this time, the valve 243c can be opened at the same time to allow the inert gas to flow into the gas supply pipe 232c. The inert gas is flow-regulated by the MFC 241c, supplied into the processing chamber 201 together with the raw material gas, and exhausted from the exhaust pipe 231.

[0096] In order to prevent the source gas from entering the nozzle 249b, the valve 243d may be opened to allow the inert gas to flow into the gas supply pipe 232d. The inert gas is supplied into the processing chamber 201 through the gas supply pipe 232d and the nozzle 249b, and exhausted from the exhaust pipe 231.

[0097] As the processing conditions in this step, for example

[0098] Treatment temperature: room temperature (25°C) to 550°C, preferably 400 to 500°C

[0099] Processing pressure: 1-4000Pa, preferably 100-1000Pa

[0100] Raw gas supply flow rate: 0.1~3slm

[0101] Raw material gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds

[0102] Inert gas supply flow rate (each gas supply pipe): 0~10slm.

[0103] In addition, the numerical range expression such as "25℃~550℃" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "25℃~550℃" means "above 25℃ and below 550℃". The same applies to other numerical ranges. In addition, the processing temperature in this specification refers to the temperature of the wafer 200 or the temperature in the processing chamber 201, and the processing pressure refers to the pressure in the processing chamber 201. In addition, the gas supply flow rate: 0slm means the case where the gas is not supplied. This is also the same in the following descriptions.

[0104] By supplying the source gas to the wafer 200 under the above conditions, the first layer is formed on the wafer 200 (underlayer on the surface). For example, when a silicon (Si)-containing gas described later is used as the source gas, a Si-containing layer is formed as the first layer.

[0105] After the first layer is formed, the valve 243a is closed to stop the supply of the raw material gas into the processing chamber 201. At this time, the APC valve 244 is still opened, and the processing chamber 201 is evacuated by the vacuum pump 246 to remove the raw material gas, reaction byproducts, etc. that have not reacted or contributed to the formation of the first layer and remain in the processing chamber 201 from the processing chamber 201 (S4). In addition, the valves 243c and 243d are opened to supply an inert gas into the processing chamber 201. The inert gas acts as a purge gas.

[0106] As the raw material gas, for example, aminosilane-based gases such as tetrakis(dimethylamino)silane (Si[N(CH3)2]4) gas, tris(dimethylamino)silane (Si[N(CH3)2]3H) gas, bis(dimethylamino)silane (Si[N(CH3)2]2H2) gas, bis(ethylamino)silane (Si[N(C2H5)2]2H2) gas, bis(tert-butyl)aminosilane (SiH2[NH(C4H9)]2) gas, and (diisopropylamino)silane (SiH3[N(C3H7)2]) gas can be used. As the raw material gas, one or more of them can be used.

[0107] In addition, as raw material, for example, chlorosilane gas such as monochlorosilane (SiH3Cl) gas, dichlorosilane (SiH2Cl2) gas, trichlorosilane (SiHCl3) gas, tetrachlorosilane (SiCl4) gas, hexachlorodisilane (Si2Cl6) gas, octachlorotrisilane (Si3Cl8) gas, or fluorosilane gas such as tetrafluorosilane (SiF4) gas, difluorosilane (SiH2F2) gas, or bromosilane gas such as tetrabromosilane (SiBr4) gas, dibromosilane (SiH2Br2) gas, or iodosilane gas such as tetraiodosilane (SiI4) gas, diiodosilane (SiH2I2) gas can be used. That is, as raw material gas, halogenated silane gas can be used. As raw material gas, one or more of them can be used.

[0108] In addition, as the raw material gas, for example, silicon hydride gas such as monosilane (SiH4) gas, disilane (Si2H6) gas, trisilane (Si3H8) gas can be used. As the raw material gas, one or more of them can be used.

[0109] As the inert gas, for example, a rare gas such as nitrogen (N2) gas, argon (Ar) gas, helium (He) gas, neon (Ne) gas, or xenon (Xe) gas can be used. This also applies to each step described later.

[0110] (Reaction Gas Supply Steps: S5, S6)

[0111] After the film forming process is completed, a reaction gas excited by plasma is supplied to the wafer 200 in the process chamber 201 ( S5 ).

[0112] In this step, the opening and closing control of valves 243b to 243d is performed in the same process as the opening and closing control of valves 243a, 243c, and 243d in step S3. The reaction gas is flow-regulated by MFC241b and supplied to the processing chamber 201 from the gas supply hole 250b via the nozzle 249b. At this time, high-frequency power (RF power, with a frequency of 27.12 MHz in this embodiment) is supplied (applied) to the electrode 300 from the high-frequency power supply 320. The reaction gas supplied to the processing chamber 201 is excited into a plasma state inside the processing chamber 201, supplied to the wafer 200 as an active species, and exhausted from the exhaust pipe 231.

[0113] As the processing conditions in this step, for example

[0114] Processing temperature: room temperature (25°) ~ 550°C, preferably 400 ~ 500°C

[0115] Processing pressure: 1-300 Pa, preferably 10-100 Pa

[0116] Reaction gas supply flow rate: 0.1~10slm

[0117] Reaction gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds

[0118] Inert gas supply flow rate (per gas supply pipe): 0~10slm

[0119] RF power: 50~1000W

[0120] RF frequency: 27.12MHz.

[0121] Under the above conditions, the reaction gas is excited into a plasma state and supplied to the wafer 200 , thereby modifying the first layer formed on the surface of the wafer 200 into the second layer by the action of active species electrically neutral to ions generated in the plasma.

[0122] When an oxidizing gas (oxidant) such as an oxygen (O)-containing gas is used as a reaction gas, the O-containing gas is excited into a plasma state to generate an O-containing active species, which is supplied to the wafer 200. In this case, the first layer formed on the surface of the wafer 200 is oxidized as a modification process by the action of the O-containing active species. In this case, when the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon oxide layer (SiO layer) as the second layer.

[0123] In addition, when a nitriding gas (nitriding agent) such as a nitrogen (N) and hydrogen (H) containing gas is used as a reaction gas, the N and H containing gas is excited into a plasma state to generate N and H containing active species, and the N and H containing active species are supplied to the wafer 200. In this case, the first layer formed on the surface of the wafer 200 is nitrided as a modification treatment by the action of the N and H containing active species. In this case, when the first layer is, for example, a Si containing layer, the Si containing layer as the first layer is modified into a silicon nitride layer (SiN layer) as the second layer.

[0124] After the first layer is modified into the second layer, the valve 243b is closed to stop the supply of the reaction gas. In addition, the supply of RF power to the electrode 300 is stopped. Then, the reaction gas or reaction byproducts remaining in the processing chamber 201 are removed from the processing chamber 201 through the same processing process and processing conditions as step S4 (S6).

[0125] As the reaction gas, for example, an O-containing gas or a N- and H-containing gas can be used as described above. As the O-containing gas, for example, oxygen (O2) gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO2) gas, ozone (O3) gas, hydrogen peroxide (H2O2) gas, water vapor (H2O), ammonium hydroxide (NH4(OH)) gas, carbon monoxide (CO) gas, carbon dioxide (CO2) gas, etc. can be used. As the N- and H-containing gas, ammonia (NH3) gas, diazine (N2H2) gas, hydrazine (N2H4) gas, N3H8 gas, and other nitride-based gases can be used. As the reaction gas, one or more of them can be used.

[0126] As the inert gas, for example, the various gases exemplified in step S4 can be used.

[0127] (Implement specified number of times: S7)

[0128] The above steps S3, S4, S5, and S6 are performed non-simultaneously, i.e., asynchronously, in this order as one cycle, and the cycle is performed a specified number of times (n times, n is an integer greater than 1), i.e., more than one time, thereby being able to form a film of a specified composition and a specified film thickness on the wafer 200. The above cycle is preferably repeated multiple times. That is, it is preferred that the thickness of the first layer formed in each cycle is less than the desired film thickness, and the above cycle is repeated multiple times until the film thickness of the film formed by stacking the second layer reaches the desired film thickness. In addition, when, for example, a Si-containing layer is formed as the first layer and a SiO layer is formed as the second layer, a silicon oxide film (SiO film) is formed as the film. In addition, when, for example, a Si-containing layer is formed as the first layer and a SiN layer is formed as the second layer, a silicon nitride film (SiN film) is formed as the film.

[0129] (Atmospheric pressure recovery step: S8)

[0130] After the film forming process is completed, inert gas is supplied from the gas supply pipes 232c and 232d to the processing chamber 201, and the gas is exhausted from the exhaust pipe 231. Thus, the processing chamber 201 is purged with the inert gas, and the reaction gas and the like remaining in the processing chamber 201 are removed from the processing chamber 201 (inert gas purging). After that, the atmosphere in the processing chamber 201 is replaced with the inert gas (inert gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (atmospheric pressure restoration: S8).

[0131] (Move out step: S9)

[0132] Afterwards, the sealing cover 219 is lowered by the wafer boat elevator 115, the lower end of the manifold 209 is opened, and the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported by the wafer boat 217 (wafer boat unloading). After the wafer boat is unloaded, the gate 219s is moved, and the lower end opening of the manifold 209 is sealed by the gate 219s via the O-ring 220c (gate closing). After the processed wafer 200 is carried out to the outside of the reaction tube 203, it is taken out from the wafer boat 217 (wafer removal). In addition, after the wafer is taken out, an empty wafer boat 217 can also be moved into the processing chamber 201.

[0133] Here, the pressure in the furnace during substrate processing is preferably controlled within a range of more than 2Pa and less than 300Pa. This is because, when the pressure in the furnace is lower than 2Pa, the mean free path of the gas molecules becomes longer than the Debye length of the plasma, and the plasma directly hitting the furnace wall becomes significant, so it is difficult to suppress the generation of particles. In addition, when the pressure in the furnace is higher than 300Pa, the plasma generation efficiency is saturated, so even if the reaction gas is supplied, the amount of plasma generated will not change, and the reaction gas will be consumed in vain. At the same time, the mean free path of the gas molecules becomes shorter, thereby deteriorating the transport efficiency of the plasma active species reaching the wafer.

[0134] (3) Effects of this embodiment

[0135] By adjusting the shape (length or area) of the electrode, the vertical plasma distribution in the wafer region can be made uniform, thereby enabling more uniform substrate processing using plasma.

[0136] The embodiments of the present disclosure have been described in detail above, but the present disclosure is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit thereof.

[0137] For another example, in the above-mentioned embodiment, an example of supplying the reactant after the raw material is supplied is described. The present disclosure is not limited to such a method, and the supply order of the raw material and the reactant may be reversed. That is, the raw material may be supplied after the reactant is supplied. By changing the supply order, the film quality or composition ratio of the formed film can be changed.

[0138] In addition to forming SiO films and SiN films on the wafer 200, the present disclosure is also suitable for forming Si-based oxide films such as silicon carbide film (SiOC film), silicon carbonitride oxide film (SiOCN film), and silicon oxynitride film (SiON film) on the wafer 200.

[0139] For example, in addition to the above-mentioned gases, or on the basis of these gases, nitrogen (N)-containing gases such as ammonia (NH3) gas, carbon (C)-containing gases such as propylene (C3H6) gas, boron (B)-containing gases such as boron trichloride (BCl3) gas, etc. can also be used to form, for example, SiN films, SiON films, SiOCN films, SiOC films, SiCN films, SiBN films, SiBCN films, BCN films, etc. In addition, the order in which the gases are made to flow can be appropriately changed. When performing these film formations, the film formation can be performed under the same processing conditions as the above-mentioned embodiments, and the same effects as the above-mentioned embodiments can be obtained. In these cases, the above-mentioned reaction gases can be used as the oxidant of the reaction gas.

[0140] In addition, the present disclosure can also be appropriately applied when forming a metal oxide film or a metal nitride film containing metal elements such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), aluminum (Al), molybdenum (Mo), and tungsten (W) on the wafer 200.

[0141] That is, the present disclosure can be appropriately applied when forming a semi-metal film containing a semi-metal element or a metal film containing a metal element. The processing process and processing conditions of these film forming processes can be set to the same processing process and processing conditions as the film forming processes shown in the above-mentioned embodiments and modified examples. In these cases, the same effects as those of the above-mentioned embodiments can also be obtained.

[0142] The process used in the film forming process is preferably prepared separately according to the process content, and stored in the storage device 121c via the electrical communication line or the external storage device 123. In addition, when starting various processes, it is preferred that the CPU 121a appropriately selects a suitable process from the multiple processes stored in the storage device 121c according to the process content. Thus, thin films of various film types, composition ratios, film qualities, and film thicknesses can be formed universally and reproducibly using one substrate processing device. In addition, the burden on the operator can be reduced, operational errors can be avoided, and various processes can be started quickly.

[0143] The above-mentioned process is not limited to the case of new production, and can also be prepared by, for example, changing an existing process already installed in a substrate processing device. When changing a process, the changed process can be installed in the substrate processing device via an electrical communication line or a storage medium storing the process. In addition, the input / output device 122 of the existing substrate processing device can be operated to directly change the existing process already installed in the substrate processing device.

[0144] In the above-mentioned method, an example of forming a film using a batch-type substrate processing device that processes a plurality of substrates at a time is described. The present disclosure is not limited to the above-mentioned method, and can also be appropriately applied to the case where a film is formed using a single-piece substrate processing device that processes one or several substrates at a time. In addition, in the above-mentioned method, an example of forming a film using a substrate processing device having a hot-wall type processing furnace is described. The present disclosure is not limited to the above-mentioned method, and can also be appropriately applied to the case where a film is formed using a substrate processing device having a cold-wall type processing furnace.

[0145] Explanation of symbols

[0146] 200: wafer, 201: processing chamber, 300: electrodes, 300-1: first electrode (hot electrode), 300-2: second electrode (ground electrode).

Claims

1. A substrate processing device, characterized in that: have: a processing chamber that processes the substrate; A plurality of first electrodes are disposed outside the processing chamber and connected to a high-frequency power source and are configured to be folded back at the upper portion; as well as The second electrode is given a reference potential.

2. The substrate processing device according to claim 1, characterized in that: The second electrode is disposed between the first electrodes.

3. The substrate processing device according to claim 1, characterized in that: The substrate processing device comprises a plurality of the second electrodes. The plurality of first electrodes and the second electrodes are arranged alternately.

4. The substrate processing device according to claim 3, characterized in that: The number of the first electrodes is the same as the number of the second electrodes.

5. The substrate processing device according to claim 1 or 2, characterized in that: The plurality of first electrodes have different lengths.

6. The substrate processing device according to claim 1 or 2, characterized in that: The plurality of first electrodes have different areas.

7. The substrate processing device according to claim 1 or 2, characterized in that: The length of the plurality of first electrodes is longer than the length of the second electrode.

8. The substrate processing device according to claim 1 or 2, characterized in that: The first electrode and the second electrode are formed in a flat plate shape.

9. The substrate processing device according to claim 8, characterized in that: The plurality of first electrodes have a U-shaped folded portion.

10. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus includes a heating unit that heats the substrate.

11. The substrate processing apparatus according to claim 10, wherein: The first electrode and the second electrode are disposed inside the heating portion.

12. The substrate processing apparatus according to claim 10, wherein: The first electrode and the second electrode are disposed between the processing chamber and the heating portion.

13. The substrate processing apparatus according to claim 1 or 2, characterized in that: The substrate processing apparatus includes a substrate holder that loads and holds the plurality of substrates.

14. The substrate processing apparatus according to claim 13, wherein: The plurality of first electrodes are configured to be folded back with respect to a loading direction of the substrate.

15. The substrate processing apparatus according to claim 13, wherein: The plurality of first electrodes and the second electrodes are arranged along a loading direction of the substrate.

16. The substrate processing apparatus according to claim 1, wherein: The plurality of first electrodes are connected to the high frequency power source at the bottom.

17. An electrode unit, characterized in that: have: A plurality of first electrodes connected to a high frequency power source and configured to be folded back at the upper portion; as well as The second electrode is given a reference potential.

18. A method for manufacturing a semiconductor device, characterized in that: It has the following processes: The process of carrying a substrate into a processing chamber of a substrate processing device, wherein the substrate processing device comprises: the processing chamber for processing the substrate; a plurality of first electrodes disposed outside the processing chamber and connected to a high-frequency power source and configured to be folded back at the top; a second electrode to which a reference potential is given; and The step of generating plasma in the processing chamber.

19. A program, characterized in that The computer enables the substrate processing device to perform the following process: The process of carrying a substrate into a processing chamber of the substrate processing device, wherein the substrate processing device comprises: the processing chamber, which processes the substrate; a plurality of first electrodes, which are arranged outside the processing chamber and connected to a high-frequency power supply and are configured to be folded back at the upper part; a second electrode, which is given a reference potential; and A process of generating a plasma within the processing chamber.

Images