Shielding Component and Chemical Vapor Deposition Equipment

Abstract

The present invention provides a shielding component and a chemical vapor deposition device. The shielding component includes a top support ring and a shielding ring. A plurality of horizontally inwardly extending bosses are spaced on the inner circumferential surface of the top support ring, and only some of the bosses are provided with chutes, and the chutes have circumferentially inward tapered surfaces; on the circumferential surface of the shielding ring, there are provided first lugs corresponding to the notch on the wafer up and down and second lugs corresponding to the bosses of the top support ring one by one and adapted thereto. The first lugs extend horizontally inwardly, the second lugs extend horizontally outwardly, the first lug and one of the second lugs are located on the same radial line and the boss corresponding to the second lug is not provided with a chute; a plurality of downwardly extending claws for adapting to the outer circumferential surface of the wafer carrier are also spaced on the shielding ring. The present invention helps to ensure that the shielding ring and the top support ring are circumferentially centered and radially aligned during installation, so as to ensure that the notch position is in the same position each time the wafer carrier jacks up the shielding ring, which helps to improve the process yield.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuit manufacturing, and particularly relates to a shielding component and a chemical vapor deposition (CVD) device having the shielding component. Background Art

[0002] APF (Aligned Pocket Formation) is a process technology for manufacturing semiconductor devices. It forms a doped region by creating a pocket, thereby forming a conductive layer or an insulating layer.

[0003] In the APF process of CVD, a shielding ring is required to shield the edge of the wafer and the positioning notch (Notch) of the wafer. Before coating, a robotic arm (fork) holds the wafer and places it at the loading position, and the wafer carrier rises to hold the wafer. During coating, the wafer carrier rises with the wafer close to the spray plate. During the rising process, the shielding ring is lifted by the wafer carrier from the top support ring. The shielding ring shields the edge of the wafer and the Notch and rotates with the rotation of the wafer carrier. After coating, the wafer carrier descends, and the shielding ring falls onto the top support ring during the descent of the wafer carrier. The wafer is at the unloading position, and the robotic arm holds the wafer and removes it from the chamber.

[0004] During the installation of the chamber of the CVD device, the wafer carrier needs to be aligned and centered with reference to the inner wall of the chamber and preliminarily leveled. After the wafer carrier is aligned and centered and leveled, the chamber cover is closed, and the wafer carrier is blindly adjusted to be equidistant from the spray plate on the chamber cover. The robotic arm holds the wafer in and out of the chamber. The robotic arm and the wafer are indirectly aligned with reference to the inner wall of the chamber, and the wafer Notch is aligned with the chamber. When the wafer carrier holds the wafer, the wafer slides from the positioning surface of the wafer carrier to the bottom plane of the wafer carrier and slips to the center of the wafer carrier, but the Notch is still aligned with the chamber and there is no circumferential rotation. Since different references are used in the two leveling processes, after the subsequent blind adjustment of the wafer carrier to be equidistant from the spray plate, there may be a slight offset between the plane of the wafer carrier and the cylindrical surface of the inner wall of the chamber. During the rising process of the wafer carrier, if the shielding ring and the wafer carrier are not aligned, there will be a slight offset between the center of the shielding ring and the wafer carrier, resulting in a slight offset between the center of the wafer and the Notch relative to the center position of the shielding ring, and the coating quality will be affected. In the existing CVD device, the shielding ring is placed on the horizontal surface of the support platform on the inner circumference of the top support ring. The calibration and alignment of the shielding ring rely on manual judgment. The shielding ring may shift during the lifting and lowering process of the wafer carrier, resulting in the center of the shielding ring being unable to be aligned with the center of the wafer, and the shielding ring being unable to effectively shield the edge of the wafer and the notch, thus affecting the coating quality.

[0005] It should be noted that the above introduction of the technical background is only for the convenience of clearly and completely explaining the technical solution of the present invention and facilitating the understanding of those skilled in the art. It cannot be considered that the above technical solutions are well-known to those skilled in the art just because these solutions are described in the background art part of the present invention. Summary of the Invention

[0006] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a shielding component and a vapor deposition device having the shielding component, which are used to solve the problems in the existing vapor deposition devices, such as the shielding ring is placed on the horizontal surface of the support platform on the inner circumference of the top support ring, the calibration and alignment of the shielding ring rely on manual judgment, and the shielding ring may shift during the process of lifting and lowering with the wafer carrier, so that the wafer edge and notch position cannot be accurately shielded, thereby affecting the coating quality and other problems.

[0007] To achieve the above object and other related objects, the present invention provides a shielding component, which includes a top support ring and a shielding ring. A plurality of horizontally inwardly extending bosses are spaced on the inner circumferential surface of the top support ring, and only some of the bosses are provided with chutes, and the chute has a circumferential inner conical surface; on the circumferential surface of the shielding ring, there are provided a first lug corresponding to the notch on the wafer up and down and a second lug corresponding to the bosses of the top support ring one by one. The first lug extends horizontally inward, the second lug extends horizontally outward, the first lug and one of the second lugs are located on the same radial line and the boss corresponding to the second lug is not provided with a chute; a plurality of downwardly extending claws are also spaced on the shielding ring for adapting to the outer circumferential surface of the wafer carrier.

[0008] Optionally, the chute is a V-shaped groove.

[0009] Optionally, a plurality of spherical protrusions are spaced on the circumferential bottom surface of the shielding ring, and spherical grooves adapted to the spherical protrusions one by one are provided on the wafer carrier. The height of the spherical protrusion is greater than the depth of the spherical groove, so that when the shielding ring is erected on the wafer carrier through the spherical protrusions, other surfaces except the spherical protrusions do not directly contact the wafer carrier.

[0010] Optionally, both the top support ring and the shielding ring are integrally formed ceramic rings.

[0011] Optionally, a plurality of exhaust holes are spaced on the annular side surface of the top support ring.

[0012] Optionally, the bosses provided with chutes and the bosses not provided with chutes are alternately and evenly spaced on the same circumferential surface of the top support ring.

[0013] Optionally, the inner peripheral surfaces of the plurality of jaws form a conical inner peripheral surface with an upper opening size smaller than the lower opening size, and the upper opening size of the conical inner peripheral surface matches the outer peripheral surface size of the wafer carrier.

[0014] Optionally, the jaws are provided in one-to-one correspondence with the second lugs.

[0015] The present invention also provides a chemical vapor deposition device, which includes a deposition chamber, a wafer carrier, and a shielding component as described in any of the above solutions. The wafer carrier and the shielding component are both located in the deposition chamber, and the shielding component is correspondingly located directly above the wafer carrier.

[0016] Optionally, the chemical vapor deposition device includes an APF chemical vapor deposition device.

[0017] As described above, the shielding component and the chemical vapor deposition device of the present invention have the following beneficial effects: The shielding component provided by the present invention ensures circumferential centering and radial alignment of the shielding ring and the top support ring during installation by providing a chute and a circumferential inner conical surface on some of the convex platforms of the top support ring and correspondingly adapting the lugs of the shielding ring thereto. This ensures that the notch position is in the same position each time the wafer carrier lifts the shielding ring. At the same time, the shielding ring is designed with jaws to ensure centering and alignment between the wafer carrier and the shielding ring during the process of the wafer carrier lifting the shielding ring, ensuring the centering of the shielding ring and the wafer on the wafer carrier and ensuring that the lug position of the shielding ring is aligned with the wafer notch. Through these optimized structural designs, it helps to improve the process yield. Using the chemical vapor deposition device including this shielding component helps to improve the thin film deposition quality. Description of the Drawings

[0018] Figure 1 Shown is a top view of the shielding component provided by the present invention when the shielding ring is placed on the top support ring.

[0019] Figure 2 Shown as Figure 1 A schematic cross-sectional structure diagram along the direction of line AA.

[0020] Figure 3 Shown is an exploded structure diagram of the shielding component provided by the present invention.

[0021] Figure 4 Shown is a top view of the top support ring in the shielding component of the present invention in an example.

[0022] Figure 5 Shown as Figure 4 A schematic cross-sectional structure diagram along the direction of line BB.

[0023] Figure 6 Shown as Figure 4 A schematic cross-sectional structure diagram along the direction of line EE.

[0024] Figure 7 Shown is a front view of a shielding ring in a shielding component provided by the present invention in an example.

[0025] Figure 8 Shown is a schematic diagram of the positional relationship between the claws of the shielding ring of the present invention and a wafer carrier.

[0026] Figure 9 and Figure 10 Shown is a schematic diagram of the positional relationship of the shielding component provided by the present invention during different process steps when applied to a chemical vapor deposition apparatus. Detailed Description of the Invention

[0027] The following specific examples illustrate the embodiments of the present invention. Those skilled in the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. When describing the embodiments of the present invention in detail, for ease of explanation, the cross-sectional views showing the device structure will be enlarged locally out of proportion and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention here. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0028] For convenience of description, spatial relationship terms such as "beneath", "below", "lower", "under", "above", "upper", etc. may be used herein to describe the relationship between one element or feature shown in the drawings and other elements or features. It will be understood that these spatial relationship terms are intended to encompass other directions of the device in use or operation in addition to the directions depicted in the drawings. Further, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or there can be one or more intervening layers.

[0029] In the context of the present invention, the structure in which the first feature is "above" the second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0030] It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention schematically. Therefore, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, number, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex. To make the diagrams as concise as possible, not all structures are labeled in each drawing.

[0031] This embodiment provides a shielding component, which can be used in semiconductor devices such as chemical vapor deposition equipment or dry etching equipment that need to shield the edge of the wafer, especially the notch position on the edge of the wafer, during the process. In this embodiment, the application of the shielding component in a chemical vapor deposition equipment will be mainly taken as an example, especially the application in an APF chemical vapor deposition equipment. Since the APF process has particularly high requirements for the alignment accuracy of each process component inside the equipment, it is very suitable to adopt the shielding component of this application.

[0032] The structure of the shielding component in this embodiment can be referred to Figures 1 to 8 as shown, which includes a top support ring 11 and a shielding ring 12. As the name implies, the top support ring 11 and the shielding ring 12 are generally ring-shaped structures. The top support ring 11 has an annular side wall, and a plurality of horizontally inwardly extending bosses 111 are spaced apart on its inner peripheral surface. The plurality of bosses 111 are, for example, evenly spaced on the inner peripheral surface of the top support ring 11. Among them, chutes 112 are provided on only some of the bosses 111, and the chute 112 has a circumferentially inwardly tapered surface 113. That is, at least some of the bosses 111 are not provided with chutes 112, or in other words, the morphologies of the bosses 111 are not completely the same. In some examples, steps for facilitating the erection of the shielding ring can be provided on the bosses without chutes.

[0033] On the circumferential surface of the shielding ring 12, there are provided a first lug 121 corresponding to the notch on the wafer 13 up and down and a second lug 122 corresponding to and mating with the bosses 111 of the top support ring 11 one by one. The first lug 121 extends horizontally inward. For example, the first lug 121 is connected to the inner circumferential surface of the shielding ring 12 and extends towards the center of the shielding ring 12, and its extension length and morphology match the morphology of the notch of the wafer 13. The notch on the wafer 13 is used for alignment during the process, and it is necessary to ensure that it is not blocked during the chip manufacturing process. In some examples, the notch of the wafer 13 is a V-shaped notch, then the first lug 121 is V-shaped. In some other examples, the notch is fan-shaped, then the first lug 121 is correspondingly fan-shaped. The first lug 121 is used to shield the notch of the wafer 13 to prevent the deposition of a thin film at the notch position during processes such as chemical vapor deposition. The second lug 122 extends horizontally outward. When the shielding ring 12 is placed on the top support ring 11, the second lugs 122 of the shielding ring 12 are correspondingly placed on the bosses 111 of the top support ring 11 one by one, and a part of the second lugs 122 or a part of the second lugs 122 are correspondingly embedded in the sliding grooves 112 of the bosses 111, and the outer circumferential surface of this part of the lugs fits with the inner conical surface 113 of the corresponding sliding groove 112. Therefore, in this embodiment, the morphologies of the second lugs 122 are not completely the same, but at least include one morphology adapted to the bosses 111 with sliding grooves 112 and one morphology adapted to the bosses 111 without sliding grooves 112. In addition, the bosses 111 with sliding grooves 112 can be completely the same or not completely the same, or rather, the morphologies of the sliding grooves 112 can be completely the same or different. What matters is that the second lugs 122 of the shielding ring 12 are adapted to them. From the perspective of processing, it is preferred that all the sliding groove 112 structures are the same, for example, all are V-shaped grooves, which is convenient for clamping the second lugs 122 in the corresponding bosses 111.

[0034] In addition, in this embodiment, the first lug 121 and one of the second lugs 122 are located on the same radial direction (but on opposite sides of the shielding ring 12), and the boss 111 corresponding to the second lug 122 is not provided with a sliding groove 112. Since there is only one notch on the wafer 13, there is also only one first lug 121, so it is possible to quickly and accurately position when assembling the shielding component. At the same time, a plurality of claws 123 that extend downward and are used to adapt to the outer peripheral surface of the wafer carrier 14 are also spaced apart on the shielding ring 12 in this embodiment. For example, the claw 123 extends downward from the outer edge of the bottom surface of the shielding ring 12, and its extension length is, for example, controlled within 2 cm. When the shielding ring 12 is clamped on the wafer carrier 14 and moves up and down with the wafer carrier 14, these claws 123 closely adhere to the outer peripheral surface of the wafer carrier 14, which can effectively prevent the shielding ring 12 and the wafer carrier 14 from shifting, ensuring accurate shielding of the wafer 13, especially ensuring that the first lug 121 shields the notch position of the wafer 13, which helps to improve the process yield.

[0035] The working principle of the shielding component provided in this embodiment when used in a semiconductor device, for example, when used in a chemical vapor deposition device, can be combined with Figure 9 and Figure 10 as shown. Since the sliding groove 112 is provided on the partial boss 111 of the top support ring 11 for supporting the shielding ring 12, the sliding groove 112 is, for example, a radial V-shaped groove, and the V-shaped groove has a circumferential inner conical surface 113, so that during the sliding process of the shielding ring 12 falling from the wafer carrier 14 onto the top support ring 11, the circumferential positioning of the shielding ring 12 is realized due to the action of the V-shaped groove; during the sliding process of the shielding ring 12 falling from the wafer carrier 14 onto the top support ring 11, the shielding ring 12 is centered with the top support ring 11 due to the action of the circumferential inner conical surface 113; when the wafer carrier 14 rises past the top support ring 11, the shielding ring 12 is lifted from the top support ring 11, and the relative sliding occurs between the inner peripheral surface of the claw 123 of the shielding ring 12 and the outer edge of the wafer carrier 14, so that the shielding ring 12 is centered with the outer edge of the wafer carrier 14. Since the wafer 13 is centered with the wafer carrier 14, the shielding ring 12 is centered with the wafer 13, and the first lug 121 of the shielding ring 12 is aligned with the notch of the wafer 13; when the wafer carrier 14 rises to the process coating position, the shielding ring 12 has completely fallen on the wafer carrier 14. During the coating process, the shielding ring 12 rotates one full circle with the wafer carrier 14; when the coating is completed, the wafer carrier 14 stops rotating and descends, and the shielding ring 12 descends with the wafer carrier 14. When passing through the top support ring 11, the shielding ring 12 falls on the top support ring 11 and slides along the V-shaped groove and the circumferential inner conical surface 113 of the top support ring 11 and falls on the shielding ring 12. At this time, the shielding ring 12 is circumferentially positioned and radially aligned with the top support ring 11.

[0036] The shielding assembly provided in this embodiment provides a slide groove and a circumferential inner cone on part of the boss of the top support ring, and adapts the lug of the shielding ring to correspond thereto, to ensure that the shielding ring and the top support ring are circumferentially centered and radially aligned during installation, thereby ensuring that the notch is in the same position each time the wafer carrier lifts up the shielding ring. At the same time, the shielding ring is designed with claws to ensure that the wafer carrier is centered and aligned with the shielding ring during the process of lifting the shielding ring, to ensure that the shielding ring is aligned with the wafer on the wafer carrier, and to ensure that the lug position of the shielding ring is aligned with the wafer notch. These optimized structural designs can help to improve process yields, such as improving coating quality.

[0037] In some examples, such as Figure 7 As shown, the circumferential bottom surface of the shielding ring 12 is provided with a plurality of spherical protrusions 124 at intervals, and the wafer carrier 14 is provided with spherical grooves that match the spherical protrusions 124 one by one, and the height of the spherical protrusions 124 is greater than the depth of the spherical grooves, so that when the shielding ring 12 is erected on the wafer carrier 14 through the spherical protrusions 124, other surfaces except the spherical protrusions 124 do not directly contact the wafer carrier 14. That is, when the shielding ring 12 is lifted up by the wafer carrier 14, these spherical protrusions 124 on the bottom surface of the shielding ring 12 are embedded in the spherical grooves of the wafer carrier 14 one by one to achieve fixation between the two. This not only helps to prevent the shielding ring 12 from shifting during the process of rising and falling and rotating with the wafer carrier 14, but also can minimize the tiny particles generated by the contact and friction between the shielding ring 12 and the wafer carrier 14, which helps to reduce particle contamination and improve the process yield. The number of spherical protrusions 124 is 3 or more, for example 4, which are evenly spaced and distributed on the bottom surface of the shielding ring 12, and the number of corresponding spherical grooves is 4. In some examples, the inner surface of the spherical groove and / or the surface of the spherical protrusion may be provided with a wear-resistant shock-absorbing material layer, which can reduce the friction between the two and reduce the adverse effects of shaking on the wafer during the lifting process. The shock-absorbing material layer may preferably be made of a porous graphene material with a certain elasticity.

[0038] The material of the shielding component depends on its application. For example, if it is applied to vapor deposition equipment, the top support ring 11 and the shielding ring 12 are preferably ceramic rings that are integrally processed. More specifically, for example, one or more ceramics such as aluminum oxide, zirconium oxide, and yttrium oxide. If applied to dry etching process, the top support ring 11 and the shielding ring 12 are each silicon rings that are integrally processed. In addition, they can also be quartz rings, silicon carbide rings or other materials.

[0039] In some examples, a plurality of exhaust holes 114 are arranged at intervals on the annular side surface of the top support ring 11. The exhaust holes 114 are used to discharge residual gas in a timely manner during the process.

[0040] The number of bosses 111 on the top support ring 11 is more than 3, preferably 4. Correspondingly, the number of second lugs on the shielding ring 12 is 4. In some examples, the bosses 111 provided with the chutes 112 and the bosses 111 not provided with the chutes 112 are alternately and evenly spaced on the same circumferential surface of the top support ring 11, which is convenient for quick alignment during installation.

[0041] In some examples, the inner circumferential surfaces of the plurality of jaws 123 form a conical inner circumferential surface with an upper opening size smaller than the lower opening size, and the upper opening size of the conical inner circumferential surface matches the outer circumferential surface size of the wafer carrier 14. Refer to Figure 8 As shown, when the shielding ring 12 is clamped on the wafer carrier 14, the jaws 123 extending downward from the outer wall gradually move away from the wafer carrier 14 from being in contact with it, so that there is a gap between the end of the jaw 123 away from the shielding ring 12 and the outer circumferential surface of the wafer carrier 14. Therefore, when the shielding ring 12 is lifted by the wafer carrier 14, the inner conical surface of its jaws 123 slides against the outer circumferential surface of the wafer carrier 14 and finally the two are fixed; when the wafer carrier 14 descends, the shielding ring 12 can easily detach from the surface of the wafer carrier 14 and fall onto the top support ring 11 when passing through the top support ring 11. At the same time, such a setting is also more conducive to the loading and unloading of the equipment and avoids adhesion between the two components.

[0042] The number and installation positions of the jaws 123 and the second lugs 122 can be the same or different, but in a preferred example, the jaws 123 and the second lugs 122 are provided in one-to-one correspondence. That is, at the bottom surface of each position where the second lug 122 is provided on the shielding ring 12, a jaw 123 is correspondingly provided, making the overall design of the shielding ring 12 look simpler and more conducive to installation alignment.

[0043] The shielding component provided in this embodiment can be used in various semiconductor devices with high requirements for alignment accuracy, especially those that need to protect the wafer notch position from being affected. Using the semiconductor device provided in this embodiment helps to reduce the equipment assembly difficulty and improve the alignment accuracy.

[0044] The present invention also provides a chemical vapor deposition equipment, which includes a deposition chamber 15, a wafer carrier 14, and the shielding component as described in any of the above solutions. Therefore, the introduction of the shielding component can be fully cited here, and will not be repeated for the sake of brevity.

[0045] The structure of the chemical vapor deposition equipment provided by the present invention can be referred to Figure 9 and Figure 10As shown. The deposition chamber 15 is, for example, a metal chamber such as stainless steel or aluminum alloy. The wafer carrier 14 and the shielding assembly are both located inside the deposition chamber 15, and the shielding assembly is correspondingly located directly above the wafer carrier 14. A support shaft extending outside the deposition chamber 15 may be provided at the bottom of the wafer carrier 14, and the support shaft is connected to a power mechanism such as a motor for driving the rotation and lifting of the wafer carrier 14. The wafer carrier 14 can fix the wafer 13 based on electrostatic adsorption and / or vacuum adsorption, and heating and / or cooling pipelines may be provided inside it. In other examples, the wafer carrier 14 can also be rotated and / or lifted by electromagnetic drive, and the specific details are not limited.

[0046] In a preferred example, the chemical vapor deposition equipment is an APF chemical vapor deposition equipment. Therefore, a shower head 16 is provided at the top of the deposition chamber 15 for delivering the deposition source into the deposition chamber 15, and a cover plate 17 is also provided at the top of the equipment. The internal state of the APF chemical vapor deposition equipment during non-deposition processes is as Figure 9 shown. At this time, the shielding ring 12 rests on the top support ring 11. During the thin film deposition process, the wafer carrier 14 carries the wafer 13 upward, pushing the shielding ring 12 up from the top support ring 11 to surround the wafer 13, and being clamped on the wafer carrier 14 and rotating with the rotation of the wafer carrier 14. When the process ends and the wafer carrier 14 descends and passes through the top support ring 11, the shielding ring 12 disengages from the wafer carrier 14 and falls onto the top support ring 11. Since the shielding assembly provided by the present invention is adopted, the alignment and centering among the shielding ring 12, the top support ring 11, and the wafer carrier 14 can be ensured during the equipment installation process, and the position offset between various components can be avoided during the coating process, which helps to improve the coating quality.

[0047] In summary, the present invention provides a shielding component and a chemical vapor deposition (CVD) apparatus. The shielding component includes a top support ring and a shielding ring. A plurality of horizontally inwardly extending bosses are spaced apart on the inner peripheral surface of the top support ring, and only some of the bosses are provided with chutes having circumferentially inwardly tapered surfaces. On the circumferential surface of the shielding ring, there are first lugs corresponding to the notches on the wafer up and down, and second lugs corresponding to and mating with the bosses of the top support ring one by one. The first lugs extend horizontally inwardly, and the second lugs extend horizontally outwardly. One of the first lugs and one of the second lugs are located on the same radial line, and the boss corresponding to the second lug is not provided with a chute. A plurality of downwardly extending claws are also spaced apart on the shielding ring for mating with the outer peripheral surface of the wafer carrier. By providing chutes and circumferentially inwardly tapered surfaces on some of the bosses of the top support ring and mating the lugs of the shielding ring therewith, the shielding ring and the top support ring are ensured to be circumferentially centered and radially aligned during installation, so that the notch position is always in the same position each time the wafer carrier jacks up the shielding ring. At the same time, claws are designed on the shielding ring to ensure that the wafer carrier is centered and aligned with the shielding ring during the process of jacking up the shielding ring, ensuring the alignment of the shielding ring and the wafer on the wafer carrier, and ensuring the alignment of the lug position of the shielding ring with the wafer notch. Through these optimized structural designs, it helps to improve the process yield. Using the CVD apparatus including this shielding component helps to improve the quality of thin film deposition. Therefore, the present invention effectively overcomes various drawbacks in the prior art and has high industrial utilization value.

[0048] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A shielding assembly, characterized in that: The shielding assembly includes a top support ring and a shielding ring, wherein a plurality of bosses extending horizontally inward are arranged at intervals on the inner circumferential surface of the top support ring, and only some of the bosses are provided with slide grooves, which have a circumferential inner conical surface; a first boss corresponding to the notch on the wafer and a second boss corresponding to the boss of the top support ring are arranged on the circumferential surface of the shielding ring, the first boss extends horizontally inward, and the second boss extends horizontally outward, the first boss and one of the second bosses are located in the same radial direction, and the boss corresponding to the second boss is not provided with a slide groove; a plurality of claws extending downward and adapted to the outer circumferential surface of the wafer carrier are also arranged at intervals on the shielding ring, and the claws are arranged on the bottom surface of the shielding ring where the second boss is arranged.

2. The shielding assembly according to claim 1, characterized in that: The slide groove is a V-shaped groove.

3. The shielding assembly according to claim 1, characterized in that: The circumferential bottom surface of the shielding ring is provided with a plurality of spherical protrusions at intervals, and the wafer carrier is provided with spherical grooves that match the spherical protrusions one by one. The height of the spherical protrusions is greater than the depth of the spherical grooves, so that when the shielding ring is erected on the wafer carrier through the spherical protrusions, other surfaces except the spherical protrusions do not directly contact the wafer carrier.

4. The shielding assembly according to claim 1, characterized in that: The top support ring and the shielding ring are both ceramic rings formed in one piece.

5. The shielding assembly according to claim 1, characterized in that: A plurality of exhaust holes are arranged at intervals on the annular side surface of the top support ring.

6. The shielding assembly according to claim 1, characterized in that: The bosses provided with the slide grooves and the bosses not provided with the slide grooves are alternately and evenly spaced on the same circumferential surface of the top support ring.

7. The shielding assembly according to claim 1, characterized in that: The inner circumferences of the plurality of claws form a conical inner circumference with an upper opening size smaller than a lower opening size, and the upper opening size of the conical inner circumference matches the outer circumference size of the wafer carrier.

8. A vapor deposition device, characterized in that: The vapor deposition equipment comprises a deposition chamber, a wafer carrier and a shielding assembly as described in any one of claims 1 to 7, wherein the wafer carrier and the shielding assembly are both located in the deposition chamber, and the shielding assembly is correspondingly located directly above the wafer carrier.

9. The vapor deposition apparatus according to claim 8, characterized in that: The vapor deposition equipment includes APF chemical vapor deposition equipment.

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