A composite transparent conductive film and preparation method thereof

Abstract

The invention discloses a composite transparent conductive film and a preparation method thereof, and relates to the technical field of ITO thin film materials. The preparation method comprises the following steps: using a first magnetron sputtering method to deposit a first ITO target material on a substrate to form a first ITO layer; using a solution deposition method to deposit a quantum dot dispersion on the first ITO layer to form a transition layer; using a second magnetron sputtering method to deposit a second ITO target material on the transition layer to form a second ITO layer, and then annealing to obtain the composite transparent conductive film. The invention obtains a composite transparent conductive film with a sandwich structure by introducing a transition layer formed by silver selenide quantum dots and bismuth quantum dots in an appropriate proportion into the ITO film, which can not only promote the transmission and distribution of electrons, reduce the resistivity of the obtained composite film, but also maintain its excellent optical properties, and provides a new means for preparing ITO thin film materials with a high quality factor.

Description

Technical Field

[0001] The present invention relates to the technical field of conductive film materials, and in particular to a composite transparent conductive film and a preparation method thereof. Background Art

[0002] With the rapid development of science and technology, transparent conductive films are increasingly used in electronic displays, solar cells, touch screens, smart windows and other fields. Among them, indium tin oxide (ITO) film has become the mainstream material for transparent conductive films due to its high conductivity and high visible light transmittance. However, with the continuous improvement of application requirements, the performance of a single ITO film is gradually unable to meet the requirements of certain high-end applications, especially in high-end application fields such as ultra-large-size displays and high-sensitivity touch controls, which puts higher requirements on the resistivity of the film.

[0003] Although the traditional single ITO film has good conductivity and optical properties, there is often a certain trade-off between its resistivity and optical transparency. Specifically, while improving conductivity, a part of optical transparency is often sacrificed; conversely, while improving optical transparency, conductivity will also be affected to a certain extent. This trade-off relationship limits the application of ITO film in fields with higher performance requirements.

[0004] Therefore, developing a high-quality ITO film with both low resistivity and high visible light transmittance has become a research hotspot in the current field. Summary of the invention

[0005] In order to solve the above problems, the present invention provides a composite transparent conductive film and a preparation method thereof.

[0006] In a first aspect, the present invention provides a method for preparing a composite transparent conductive film, the preparation method comprising the following steps:

[0007] Depositing a first ITO target material on a substrate by a first magnetron sputtering method to form a first ITO layer;

[0008] Depositing a quantum dot dispersion on the first ITO layer using a solution deposition method to form a transition layer;

[0009] Depositing a second ITO target material on the transition layer by a second magnetron sputtering method to form a second ITO layer, and then annealing to obtain the composite transparent conductive film;

[0010] The quantum dot dispersion is prepared by dispersing silver selenide quantum dots and bismuth quantum dots in a solvent at a weight ratio of 100:(11-27).

[0011] Furthermore, the weight ratio of the silver selenide quantum dots to the bismuth quantum dots is 100:21.5, and the solvent includes ethanol.

[0012] Furthermore, the working condition parameters of the first magnetron sputtering method include: a sputtering temperature of 120-140°C, a magnetron sputtering power density of 15-30 mW / cm 2 The magnetron sputtering pressure is 0.3~0.6Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 5~10sccm and argon with a flow rate of 120~150sccm, the weight ratio of tin oxide to indium oxide in the first ITO target is 5:95, and the distance between the first ITO target and the substrate is 45~55mm.

[0013] Furthermore, the thickness of the first ITO layer is 35-45 nm.

[0014] Furthermore, the step of depositing the quantum dot dispersion on the first ITO layer by a solution deposition method to form a transition layer includes the following process:

[0015] The silver selenide quantum dots and the bismuth quantum dots are added to the solvent in proportion, and ultrasonically mixed and stirred for 40 to 60 minutes at an ultrasonic power of 500 to 700 W and a stirring speed of 300 to 400 rpm to obtain the quantum dot dispersion having a total quantum dot concentration of 0.005 to 0.01 g / mL;

[0016] The quantum dot dispersion is sprayed on the first ITO layer at room temperature, and then vacuum dried for 2-3 hours at a pressure of less than 10 Pa and a temperature of 35-45° C. to form the transition layer.

[0017] Furthermore, the thickness of the transition layer is 10-20 nm.

[0018] Furthermore, the working condition parameters of the second magnetron sputtering method include: a sputtering temperature of 160-170°C, a magnetron sputtering power density of 15-30 mW / cm 2 The magnetron sputtering pressure is 0.3~0.6Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 5~10sccm and argon with a flow rate of 120~150sccm, the weight ratio of tin oxide to indium oxide in the second ITO target is 5:95, and the distance between the second ITO target and the transition layer is 45~55mm.

[0019] Furthermore, the thickness of the second ITO layer is 30-40 nm.

[0020] Furthermore, the annealing working condition parameters include: temperature of 195-220° C. and time of 30-45 minutes.

[0021] In a second aspect, based on the same inventive concept, the present invention provides a composite transparent conductive film, wherein the composite transparent conductive film is prepared by the method for preparing the composite transparent conductive film according to any one of the first aspects.

[0022] The above technical solution provided by the embodiment of the present invention has at least the following advantages compared with the prior art:

[0023] The embodiment of the present invention provides a composite transparent conductive film and a preparation method thereof. The present invention obtains a composite transparent conductive film with a sandwich structure by introducing a transition layer formed by silver selenide quantum dots and bismuth quantum dots in an appropriate proportion into an ITO film. The composite transparent conductive film not only promotes the transmission and distribution of electrons and reduces the resistivity of the obtained composite film, but also maintains its excellent optical properties, thereby providing a new means for preparing an ITO thin film material with a high quality factor. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0026] Figure 1 A schematic flow chart of a method for preparing a composite transparent conductive film provided in an embodiment of the present invention.

[0027] Figure 2 A schematic diagram of the film layer structure of a composite transparent conductive film provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] Unless otherwise specified, various raw materials, reagents, instruments and equipment used in the present invention can be purchased from the market or prepared by existing methods.

[0030] In a first aspect, the present invention provides a method for preparing a composite transparent conductive film, such as Figure 1 As shown, the preparation method comprises the following steps:

[0031] Depositing a first ITO target material on a substrate by a first magnetron sputtering method to form a first ITO layer;

[0032] Depositing a quantum dot dispersion on the first ITO layer using a solution deposition method to form a transition layer;

[0033] Depositing a second ITO target material on the transition layer by a second magnetron sputtering method to form a second ITO layer, and then annealing to obtain the composite transparent conductive film;

[0034] The quantum dot dispersion is prepared by dispersing silver selenide quantum dots and bismuth quantum dots in a solvent at a weight ratio of 100:(11-27).

[0035] The embodiment of the present invention provides a method for preparing a composite transparent conductive film. The present invention obtains a composite transparent conductive film with a sandwich structure by introducing a transition layer formed by silver selenide quantum dots and bismuth quantum dots in an appropriate proportion into an ITO film. This method not only promotes the transmission and distribution of electrons and reduces the resistivity of the obtained composite film, but also maintains its excellent optical properties, thereby providing a new means for preparing an ITO film material with a high quality factor.

[0036] The silver selenide quantum dots in the present invention can be directly prepared by using commercially available products or by using a preparation method disclosed in the prior art, such as an aqueous phase co-precipitation method. Specifically, the preparation method of the silver selenide quantum dots in the following embodiments and comparative examples of the present invention is carried out with reference to the prior art-CN 107039187 A, and specifically includes the following process: adding 6 mL of 8 mmol / L silver nitrate deionized water solution to a flask, then adding 0.8 mL of 3-mercaptopropionic acid and 5 mg of polyvinyl pyrrolidone, then adding ammonia water to adjust the pH to 10.5, stirring for 10 min, and then adding 6 mL of 4 mmol / L Na 2 SeSO 3 The mixture was stirred for 10 min, and the obtained particles were dried after centrifugal separation to obtain silver selenide quantum dots.

[0037] The bismuth quantum dots in the present invention can be directly made from commercially available products or prepared according to the preparation methods disclosed in the prior art. Specifically, the preparation methods of bismuth quantum dots in the following embodiments and comparative examples of the present invention refer to the prior art-CN104400002 A, and specifically include the following process: 0.6g glucose and 0.6g glycine are dissolved in 30mL deionized water to obtain solution A; 0.153g bismuth nitrate is added to the solution A and stirred for 10min to obtain solution B; 10mL of 0.01g / mL sodium borohydride solution is added to the solution B to obtain solution C; the solution C is reacted at 130°C for 30 minutes, cooled to room temperature after the reaction is completed, and the reaction product is filtered using a filter membrane with a pore size of 0.22 microns, and the filtrate is dialyzed for 24h with a dialysis bag with a molecular cutoff of 1000. After the dialysis is completed, the liquid in the dialysis bag is freeze-dried to obtain bismuth quantum dots.

[0038] In some specific embodiments, the method for preparing the composite transparent conductive film provided by the present invention further includes: before depositing the first ITO target material on the substrate to form the first ITO layer by the first magnetron sputtering method, pre-treating the substrate and evacuating the sputtering chamber of the magnetron sputtering device to a vacuum of 3.0×10 -6 The steps of heating Pa and the substrate to a preset sputtering temperature can be specifically performed according to the existing ITO film preparation process steps and parameters. For example, the pretreatment includes: ultrasonically cleaning the substrate with acetone, deionized water and anhydrous ethanol in sequence, and then placing it in a vacuum oven for drying or blowing it with nitrogen.

[0039] In some specific embodiments, the substrate may be a conventional one in the art, such as a soda-lime glass substrate (with a size of 2 cm×2 cm).

[0040] In some specific embodiments, the weight ratio of the silver selenide quantum dots to the bismuth quantum dots is 100:21.5, and the solvent includes ethanol.

[0041] In some specific embodiments, the working condition parameters of the first magnetron sputtering method include: a sputtering temperature of 120-140°C, a magnetron sputtering power density of 15-30 mW / cm 2 The magnetron sputtering pressure is 0.3~0.6Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 5~10sccm and argon with a flow rate of 120~150sccm, the weight ratio of tin oxide to indium oxide in the first ITO target is 5:95, and the distance between the first ITO target and the substrate is 45~55mm.

[0042] In some specific embodiments, the thickness of the first ITO layer is 35-45 nm, preferably 40 nm.

[0043] In some specific embodiments, the step of depositing the quantum dot dispersion on the first ITO layer by a solution deposition method to form a transition layer comprises the following process:

[0044] The silver selenide quantum dots and the bismuth quantum dots are added to the solvent in proportion, and ultrasonically mixed and stirred for 40 to 60 minutes at an ultrasonic power of 500 to 700 W and a stirring speed of 300 to 400 rpm to obtain the quantum dot dispersion having a total quantum dot concentration of 0.005 to 0.01 g / mL;

[0045] The quantum dot dispersion is sprayed on the first ITO layer at room temperature, and then vacuum dried for 2-3 hours at a pressure of less than 10 Pa and a temperature of 35-45° C. to form the transition layer.

[0046] In some specific embodiments, the thickness of the transition layer is 10-20 nm, preferably 15 nm.

[0047] In some specific embodiments, the working condition parameters of the second magnetron sputtering method include: sputtering temperature of 160-170°C, magnetron sputtering power density of 15-30 mW / cm 2 The magnetron sputtering pressure is 0.3~0.6Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 5~10sccm and argon with a flow rate of 120~150sccm, the weight ratio of tin oxide to indium oxide in the second ITO target is 5:95, and the distance between the second ITO target and the transition layer is 45~55mm.

[0048] In some specific embodiments, the thickness of the second ITO layer is 30-40 nm, preferably 35 nm.

[0049] In some specific embodiments, the annealing working condition parameters include: temperature of 195-220° C., preferably 210° C.; time of 30-45 minutes.

[0050] In a second aspect, based on the same inventive concept, the present invention provides a composite transparent conductive film, wherein the composite transparent conductive film is prepared by the method for preparing the composite transparent conductive film according to any one of the first aspects.

[0051] The schematic diagram of the film structure of the composite transparent conductive film provided by the embodiment of the present invention is as follows Figure 2 As shown, from bottom to top are the first ITO layer, the transition layer and the second ITO layer.

[0052] It should be noted that the component raw materials involved in the composite transparent conductive film and the preparation method thereof provided in the embodiments of the present invention, unless otherwise specified or specifically described, can be directly commercially available products or homemade using existing public preparation methods; at the same time, the steps and parameters involved, unless otherwise specified or specifically described, can be carried out according to the ITO film preparation process steps and parameters disclosed in the prior art or directly using existing equipment according to the instruction manual, and the present invention document will not repeat them one by one.

[0053] The present invention will be further described below in conjunction with specific examples. It should be understood that these examples are intended only to illustrate the present invention and are not intended to limit the scope of the present invention. The experimental methods in the following examples that do not specify specific conditions are usually measured according to national standards. If there is no corresponding national standard, then the conditions recommended by the manufacturer are followed. Example 1

[0054] This example provides a composite transparent conductive film, and the preparation method of the composite transparent conductive film comprises the following steps:

[0055] The first ITO target material is deposited on a cleaned sodium-lime glass substrate by a first magnetron sputtering method to form a first ITO layer with a thickness of 40 nm; wherein the working condition parameters of the first magnetron sputtering method include: a sputtering temperature of 130° C., a magnetron sputtering power density of 26 mW / cm 2 , the magnetron sputtering pressure is 0.5 Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 8 sccm and argon with a flow rate of 140 sccm, the weight ratio of tin oxide to indium oxide in the first ITO target is 5:95, and the distance between the first ITO target and the substrate is 50 mm;

[0056] Silver selenide quantum dots and bismuth quantum dots were added to an ethanol solvent in a weight ratio of 100:21.5, and ultrasonically mixed and stirred for 50 minutes at an ultrasonic power of 600 W and a stirring speed of 360 rpm to obtain a quantum dot dispersion with a total quantum dot concentration of 0.008 g / mL; the quantum dot dispersion was sprayed on the first ITO layer at room temperature, and then vacuum dried at a pressure of less than 10 Pa and a temperature of 40° C. for 2.5 hours to form a transition layer with a thickness of 15 nm;

[0057] A second ITO target material is deposited on the transition layer by a second magnetron sputtering method to form a second ITO layer with a thickness of 35 nm, and then annealed to obtain the composite transparent conductive film; wherein the working condition parameters of the second magnetron sputtering method include: a sputtering temperature of 165°C, a magnetron sputtering power density of 20 mW / cm 2The magnetron sputtering pressure is 0.5 Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 6 sccm and argon with a flow rate of 130 sccm, the weight ratio of tin oxide to indium oxide in the second ITO target is 5:95, and the distance between the second ITO target and the transition layer is 50 mm; the annealing working condition parameters include: temperature of 210°C; time of 35 minutes.

[0058] After testing, the sheet resistance of the composite transparent conductive film obtained in this example is 5.2Ω / sq, and the transmittance is 92.1% at a wavelength of 550 nm. At the same time, according to the formula: H = (T 550 10 ) / R S ; Among them, Ø H It is expressed as the quality factor of the composite transparent conductive film. The larger the value, the better the comprehensive performance of the composite transparent conductive film. Unit: Ω -1 ; T 550 It is expressed as the transmittance of the composite transparent conductive film at a wavelength of 550 nm, unit: %; R S Expressed as the square resistance of the composite transparent conductive film, unit: Ω / sq. Calculate the quality factor Ø H 84.45×10 -3 Ω -1 , as shown in Table 1. Example 2

[0059] This example provides a composite transparent conductive film, and the preparation method of the composite transparent conductive film comprises the following steps:

[0060] The first ITO target material is deposited on a cleaned sodium-lime glass substrate by a first magnetron sputtering method to form a first ITO layer with a thickness of 35 nm; wherein the working condition parameters of the first magnetron sputtering method include: a sputtering temperature of 120°C, a magnetron sputtering power density of 15 mW / cm 2 , the magnetron sputtering pressure is 0.3 Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 5 sccm and argon with a flow rate of 120 sccm, the weight ratio of tin oxide to indium oxide in the first ITO target is 5:95, and the distance between the first ITO target and the substrate is 45 mm;

[0061] Silver selenide quantum dots and bismuth quantum dots are added to an ethanol solvent in a weight ratio of 100:27, and ultrasonically mixed and stirred for 60 minutes at an ultrasonic power of 500 W and a stirring speed of 300 rpm to obtain a quantum dot dispersion with a total quantum dot concentration of 0.005 g / mL; the quantum dot dispersion is sprayed on the first ITO layer at room temperature, and then vacuum dried at a pressure of less than 10 Pa and a temperature of 45° C. for 2 hours to form a transition layer with a thickness of 10 nm;

[0062] A second ITO target material is deposited on the transition layer by a second magnetron sputtering method to form a second ITO layer with a thickness of 30 nm, and then annealed to obtain the composite transparent conductive film; wherein the working condition parameters of the second magnetron sputtering method include: a sputtering temperature of 160°C, a magnetron sputtering power density of 15 mW / cm 2 The magnetron sputtering pressure is 0.6 Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 5 sccm and argon with a flow rate of 120 sccm, the weight ratio of tin oxide to indium oxide in the second ITO target is 5:95, and the distance between the second ITO target and the transition layer is 45 mm; the annealing working condition parameters include: temperature of 195°C; time of 45 minutes.

[0063] The sheet resistance of the composite transparent conductive film obtained in this example is 10.4Ω / sq, and the transmittance T is 2.33W at a wavelength of 550 nm. 550 is 93.6%, and the quality factor Ø H is 43.43×10 -3 Ω -1 , as shown in Table 1. Example 3

[0064] This example provides a composite transparent conductive film, and the preparation method of the composite transparent conductive film comprises the following steps:

[0065] The first ITO target material is deposited on a cleaned sodium-lime glass substrate by a first magnetron sputtering method to form a first ITO layer with a thickness of 45 nm; wherein the working condition parameters of the first magnetron sputtering method include: a sputtering temperature of 120°C, a magnetron sputtering power density of 30 mW / cm 2 , the magnetron sputtering pressure is 0.6 Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 10 sccm and argon with a flow rate of 150 sccm, the weight ratio of tin oxide to indium oxide in the first ITO target is 5:95, and the distance between the first ITO target and the substrate is 55 mm;

[0066] Silver selenide quantum dots and bismuth quantum dots were added to an ethanol solvent in a weight ratio of 100:11, and ultrasonically mixed and stirred for 40 minutes at an ultrasonic power of 700 W and a stirring speed of 400 rpm to obtain a quantum dot dispersion with a total quantum dot concentration of 0.01 g / mL; the quantum dot dispersion was sprayed on the first ITO layer at room temperature, and then vacuum dried at a pressure of less than 10 Pa and a temperature of 35° C. for 3 hours to form a transition layer with a thickness of 20 nm;

[0067] A second ITO target material is deposited on the transition layer by a second magnetron sputtering method to form a second ITO layer with a thickness of 40 nm, and then annealed to obtain the composite transparent conductive film; wherein the working condition parameters of the second magnetron sputtering method include: a sputtering temperature of 170°C, a magnetron sputtering power density of 30 mW / cm 2 The magnetron sputtering pressure is 0.3 Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 10 sccm and argon with a flow rate of 150 sccm, the weight ratio of tin oxide to indium oxide in the second ITO target is 5:95, and the distance between the second ITO target and the transition layer is 55 mm; the annealing working condition parameters include: temperature of 220°C; time of 30 minutes.

[0068] The sheet resistance of the composite transparent conductive film obtained in this example is 6.0Ω / sq, and the transmittance T is 2.36mm at a wavelength of 550nm. 550 is 89.5%, and the quality factor Ø H 54.96×10 -3 Ω -1 , as shown in Table 1.

[0069] Comparative Example 1

[0070] This example provides a composite transparent conductive film and a preparation method thereof, which is different from Example 1 only in that the weight ratio of the silver selenide quantum dots to the bismuth quantum dots is adjusted to 100:37; the remaining steps and parameters are the same.

[0071] The sheet resistance of the composite transparent conductive film obtained in this example is 14.9Ω / sq, the transmittance is 90.3% at a wavelength of 550 nm, and the quality factor is Ø H is 24.19×10 -3 Ω -1 , as shown in Table 1.

[0072] Table 1

[0073] Test samples Square resistance (Ω / sq) <![CDATA[T 550 (%)]]> <![CDATA[Ø H (Oh) -1 )]]> Example 1 5.2 92.1 <![CDATA[84.45×10 -3 ]]> Example 2 10.4 93.6 <![CDATA[43.43×10 -3 ]]> Example 3 6.0 89.5 <![CDATA[54.96×10 -3 ]]> Comparative Example 1 14.9 90.3 <![CDATA[24.19×10 -3 ]]>

[0074] It can be seen from Table 1 that, compared with Comparative Example 1, the electrical and optical properties of the composite transparent conductive films provided by Examples 1 to 3 of the present invention are better, and the preparation of composite ITO films with ultra-low resistivity and high visible light transmittance is achieved.

[0075] In summary, the embodiments of the present invention provide a composite transparent conductive film and a method for preparing the same. The present invention obtains a composite transparent conductive film with a sandwich structure by introducing a transition layer formed by silver selenide quantum dots and bismuth quantum dots in an appropriate proportion into the ITO film. This not only promotes the transmission and distribution of electrons and reduces the resistivity of the obtained composite film, but also maintains its excellent optical properties, thereby providing a new means for preparing ITO thin film materials with a high quality factor.

[0076] Various embodiments of the present invention may be presented in the form of a range; it should be understood that the description in the form of a range is only for convenience and brevity, and should not be understood as a rigid limitation on the scope of the present invention; therefore, the range description should be considered to have specifically disclosed all possible sub-ranges and single numerical values ​​within the range. For example, the range description from 1 to 6 should be considered to have specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which are applicable regardless of the range. In addition, whenever a numerical range is indicated herein, it is intended to include any cited number (fractional or integer) within the indicated range.

[0077] The foregoing is merely a specific embodiment of the present invention, which enables those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A method for preparing a composite transparent conductive film, characterized in that: The preparation method comprises the following steps: Depositing a first ITO target material on a substrate by a first magnetron sputtering method to form a first ITO layer; Depositing a quantum dot dispersion on the first ITO layer using a solution deposition method to form a transition layer; Depositing a second ITO target material on the transition layer by a second magnetron sputtering method to form a second ITO layer, and then annealing to obtain the composite transparent conductive film; The quantum dot dispersion is prepared by dispersing silver selenide quantum dots and bismuth quantum dots in a solvent at a weight ratio of 100:(11-27).

2. The method for preparing the composite transparent conductive film according to claim 1, characterized in that: The weight ratio of the silver selenide quantum dots to the bismuth quantum dots is 100:21.5, and the solvent includes ethanol.

3. The method for preparing the composite transparent conductive film according to claim 1, characterized in that: The working condition parameters of the first magnetron sputtering method include: sputtering temperature of 120-140°C, magnetron sputtering power density of 15-30 mW / cm 2 The magnetron sputtering pressure is 0.3~0.6Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 5~10sccm and argon with a flow rate of 120~150sccm, the weight ratio of tin oxide to indium oxide in the first ITO target is 5:95, and the distance between the first ITO target and the substrate is 45~55mm.

4. The method for preparing the composite transparent conductive film according to claim 3, characterized in that: The thickness of the first ITO layer is 35-45 nm.

5. The method for preparing the composite transparent conductive film according to claim 1, characterized in that: The step of depositing the quantum dot dispersion on the first ITO layer by a solution deposition method to form a transition layer comprises the following process: The silver selenide quantum dots and the bismuth quantum dots are added to the solvent in proportion, and ultrasonically mixed and stirred for 40 to 60 minutes at an ultrasonic power of 500 to 700 W and a stirring speed of 300 to 400 rpm to obtain the quantum dot dispersion having a total quantum dot concentration of 0.005 to 0.01 g / mL; The quantum dot dispersion is sprayed on the first ITO layer at room temperature, and then vacuum dried for 2-3 hours at a pressure of less than 10 Pa and a temperature of 35-45° C. to form the transition layer.

6. The method for preparing the composite transparent conductive film according to claim 5, characterized in that: The thickness of the transition layer is 10-20 nm.

7. The method for preparing the composite transparent conductive film according to claim 1, characterized in that: The working condition parameters of the second magnetron sputtering method include: sputtering temperature of 160-170°C, magnetron sputtering power density of 15-30 mW / cm 2 The magnetron sputtering pressure is 0.3~0.6Pa, the magnetron sputtering gas is composed of oxygen with a flow rate of 5~10sccm and argon with a flow rate of 120~150sccm, the weight ratio of tin oxide to indium oxide in the second ITO target is 5:95, and the distance between the second ITO target and the transition layer is 45~55mm.

8. The method for preparing the composite transparent conductive film according to claim 7, characterized in that: The thickness of the second ITO layer is 30-40 nm.

9. The method for preparing the composite transparent conductive film according to claim 1, characterized in that: The annealing working condition parameters include: temperature of 195-220° C. and time of 30-45 minutes.

10. A composite transparent conductive film, characterized in that: The composite transparent conductive film is prepared by the method for preparing the composite transparent conductive film according to any one of claims 1 to 9.

Images