Drive Circuit for Power Semiconductor Device and Control Method Thereof

Abstract

The present application provides a driving circuit for a power semiconductor device and a control method therefor. The driving circuit at least includes a first inductive commutation module. Two ends of the first inductive commutation module are respectively used for electrically connecting to the cathode and the gate. The first inductive commutation module includes a commutation sub-module, a freewheeling sub-module, and a directional sub-module. The commutation sub-module is used for commuting the current of the power semiconductor device from the cathode to the gate. The first end of the commutation sub-module, the first end of the freewheeling sub-module, and the cathode are electrically connected. The freewheeling sub-module is used for freewheeling for the commutation sub-module. The second end of the commutation sub-module is electrically connected to the second end of the freewheeling sub-module. The third end of the freewheeling sub-module is electrically connected to the first end of the directional sub-module. The directional sub-module is used for controlling the current of the power semiconductor device to flow from the gate into the freewheeling sub-module. The second end of the directional sub-module is electrically connected to the gate. This driving circuit solves the technical problem of how to improve the reliability of the power semiconductor device.

Description

Technical Field

[0001] This application relates to the field of semiconductors, and in particular, to a driving circuit for a power semiconductor device and a control method for the driving circuit of the power semiconductor device. Background Art

[0002] Power semiconductor devices are semiconductor components used to control and convert electrical energy, mainly for electrical energy conversion and circuit control, and are the bridge between weak current control and strong current operation. They can handle large currents and high voltages, and achieve functions such as power conversion, power amplification, power switching, line protection, inversion (DC to AC), and rectification (AC to DC). The driving circuit of the power semiconductor device is used to drive the power semiconductor device, which can improve the efficiency and reliability of the power semiconductor device and provide necessary protection. However, during the operation of the power semiconductor device, the power semiconductor device fails due to reverse breakdown, which will affect the reliability of the power semiconductor device.

[0003] Therefore, there is an urgent need for a driving circuit for a power semiconductor device that can solve the above problems. Summary of the Invention

[0004] The main objective of this application is to provide a driving circuit for a power semiconductor device and a control method for the driving circuit of the power semiconductor device, so as to at least solve the problem of how to improve the reliability of the power semiconductor device in the prior art.

[0005] According to one aspect of this application, a driving circuit for a power semiconductor device is provided. The driving circuit at least includes a first inductive commutation module. The power semiconductor device includes a gate, a cathode, and an anode. Two ends of the first inductive commutation module are respectively used to be electrically connected to the cathode and the gate. The first inductive commutation module includes a commutation sub-module, a freewheeling sub-module, and a directional sub-module. Among them, the commutation sub-module is used to commutate the current of the power semiconductor device from the cathode to the gate. The first end of the commutation sub-module, the first end of the freewheeling sub-module, and the cathode are electrically connected. The freewheeling sub-module is used to freewheel for the commutation sub-module. The second end of the commutation sub-module is electrically connected to the second end of the freewheeling sub-module. The third end of the freewheeling sub-module is electrically connected to the first end of the directional sub-module. The directional sub-module is used to control the current of the power semiconductor device to flow from the gate into the freewheeling sub-module. The second end of the directional sub-module is electrically connected to the gate.

[0006] Further, the commutation sub-module includes a first commutation inductor, a first switching device, and a power supply. The freewheeling sub-module includes a second switching device and a third switching device. The orientation sub-module includes a fourth switching device. Among them, the first end of the first commutation inductor, the first end of the power supply, the second end of the third switching device, and the cathode are electrically connected. The second end of the first commutation inductor, the first end of the first switching device, and the first end of the second switching device are electrically connected. The second end of the first switching device is electrically connected to the second end of the power supply. The second end of the second switching device, the first end of the third switching device, and the first end of the fourth switching device are electrically connected. The second end of the fourth switching device and the gate are electrically connected.

[0007] Further, the first inductor commutation module further includes a fifth switching device. The first end of the fifth switching device is electrically connected to the second end of the fourth switching device. The second end of the fifth switching device is electrically connected to the gate.

[0008] Further, the first switching device, the third switching device, and the fifth switching device are MOS transistors. The first ends of the first switching device, the third switching device, and the fifth switching device are the source electrodes of the MOS transistors. The second ends of the first switching device, the third switching device, and the fifth switching device are the drain electrodes of the MOS transistors. The second switching device and the fourth switching device are diodes. The first ends of the second switching device and the fourth switching device are the cathodes of the diodes. The second ends of the second switching device and the fourth switching device are the anodes of the diodes.

[0009] Further, the drive circuit further includes: at least one second inductor commutation module. The circuit structure of the second inductor commutation module is the same as that of the first inductor commutation module. Both ends of the second inductor commutation module are electrically connected to the cathode and the gate respectively.

[0010] Further, the drive circuit further includes: at least one third inductor commutation module. The third inductor commutation module includes a second commutation inductor, a sixth switching device, a seventh switching device, an eighth switching device, and a ninth switching device. The first end of the second commutation inductor, the first end of the eighth switching device, and the cathode are electrically connected. The first end of the sixth switching device is electrically connected to the second end of the power supply. The second end of the second commutation inductor, the second end of the sixth switching device, and the first end of the seventh switching device are electrically connected. The second end of the seventh switching device, the second end of the eighth switching device, and the first end of the ninth switching device are electrically connected. The second end of the ninth switching device is electrically connected to the gate.

[0011] Further, the sixth switching device and the eighth switching device are MOS transistors. The first ends of the sixth switching device and the eighth switching device are the drains of the MOS transistors. The second ends of the sixth switching device and the eighth switching device are the sources of the MOS transistors. The seventh switching device and the ninth switching device are diodes. The first ends of the seventh switching device and the ninth switching device are the cathodes of the diodes. The second ends of the seventh switching device and the ninth switching device are the anodes of the diodes.

[0012] Further, the driving circuit further includes a turn-on module and a turn-off maintaining module. The two ends of the turn-on module and the two ends of the turn-off maintaining module are respectively electrically connected to the gate and the cathode. The turn-on module is used to turn on the power semiconductor device. The turn-off maintaining module is used to maintain the power semiconductor device in the off state.

[0013] Further, the turn-off maintaining module includes an energy storage capacitor and a tenth switching device. The first end of the energy storage capacitor is electrically connected to the cathode. The second end of the energy storage capacitor is electrically connected to the first end of the tenth switching device. The second end of the tenth switching device is electrically connected to the gate.

[0014] Further, the tenth switching device is a MOS transistor. The first end of the tenth switching device is the source of the MOS transistor. The second end of the tenth switching device is the drain of the MOS transistor.

[0015] According to another aspect of the present application, a control method for a drive circuit of the power semiconductor device is provided. The commutation sub-module includes a first commutation inductor, a first switching device, and a power supply. The freewheeling sub-module includes a second switching device and a third switching device. The directional sub-module includes a fourth switching device. Wherein, a first end of the first commutation inductor, a first end of the power supply, a second end of the third switching device, and the cathode are electrically connected. A second end of the first commutation inductor, a first end of the first switching device, and a first end of the second switching device are electrically connected. A second end of the first switching device is electrically connected to a second end of the power supply. A second end of the second switching device, a first end of the third switching device, and a first end of the fourth switching device are electrically connected. A second end of the fourth switching device and the gate are electrically connected. The method includes: when the power semiconductor device starts to conduct, controlling to turn off the first switching device and the third switching device; when the power semiconductor device starts to turn off, controlling to turn on the first switching device to increase the current of the first commutation inductor. When the current of the first commutation inductor is greater than the current of the anode, controlling to turn on the third switching device and turn off the first switching device to reduce the current of the first commutation inductor, and then controlling to turn off the third switching device to complete the turn-off of the power semiconductor device; when the turn-off of the power semiconductor device is completed, controlling to turn on the third switching device.

[0016] Further, the first inductive commutation module further includes a fifth switching device. A first end of the fifth switching device is electrically connected to a second end of the fourth switching device. A second end of the fifth switching device is electrically connected to the gate. The method further includes: when the power semiconductor device starts to conduct, controlling to turn off the fifth switching device; when the power semiconductor device starts to turn off, while controlling to turn off the third switching device, controlling to turn on the fifth switching device.

[0017] Further, the drive circuit further includes: at least one second inductive commutation module, the circuit structure of the second inductive commutation module being the same as that of the first inductive commutation module, two ends of the second inductive commutation module being electrically connected to the cathode and the gate respectively, and the method further includes: when the power semiconductor device starts to conduct, controlling to turn off the first switching device and the third switching device in each of the second inductive commutation modules; when the power semiconductor device starts to turn off, controlling to turn on the first switching device in each of the second inductive commutation modules to increase the current in the first commutation inductor in each of the second inductive commutation modules, and when the current in the first commutation inductor in each of the second inductive commutation modules is greater than the current of the anode, controlling to turn on the third switching device in each of the second inductive commutation modules and turn off the first switching device in each of the second inductive commutation modules to reduce the current in the first commutation inductor in each of the second inductive commutation modules, and then controlling to turn off the third switching device in each of the second inductive commutation modules to cause the power semiconductor device to complete turning off; when the power semiconductor device completes turning off, controlling to turn on the third switching device in each of the second inductive commutation modules.

[0018] Further, the drive circuit further includes: at least one third inductive commutation module, the third inductive commutation module including a second commutation inductor, a sixth switching device, a seventh switching device, an eighth switching device, and a ninth switching device, a first end of the second commutation inductor, a first end of the eighth switching device, and the cathode being electrically connected, a first end of the sixth switching device being electrically connected to a second end of the power supply, a second end of the second commutation inductor, a second end of the sixth switching device, and a first end of the seventh switching device being electrically connected, a second end of the seventh switching device, a second end of the eighth switching device, and a first end of the ninth switching device being electrically connected, and a second end of the ninth switching device being electrically connected to the gate, and the method further includes: when the power semiconductor device starts to conduct, controlling to turn off each of the sixth switching device and the eighth switching device; when the power semiconductor device starts to turn off, controlling to turn on each of the sixth switching devices to increase the current in the corresponding second commutation inductor, and when the current in the second commutation inductor is greater than the current of the anode, controlling to turn on the eighth switching device and turn off the sixth switching device to reduce the current in the second commutation inductor, and then controlling to turn off each of the eighth switching devices to cause the power semiconductor device to complete turning off; when the power semiconductor device completes turning off, controlling to turn on each of the eighth switching devices.

[0019] Applying the technical solution of the present application, a driving circuit for a power semiconductor device is provided. The driving circuit at least includes a first inductive commutation module. The two ends of the first inductive commutation module are respectively used for electrically connecting to the cathode and the gate. The first inductive commutation module includes a commutation sub-module, a freewheeling sub-module, and a directional sub-module. The commutation sub-module is used to commutate the current of the power semiconductor device from the cathode to the gate. The freewheeling sub-module is used to provide freewheeling for the commutation sub-module. The directional sub-module is used to control the current of the power semiconductor device to flow from the gate into the freewheeling sub-module. The freewheeling sub-module in the first inductive commutation module in the driving circuit of the power semiconductor device can be used as the freewheeling circuit of the commutation sub-module. The freewheeling sub-module provides an additional release path for the current in the commutation sub-module, thereby increasing the freedom of the transferred current, avoiding the reverse breakdown failure of the gate and the cathode during the recovery stage after the power semiconductor device is turned off due to excessive turn-off voltage, thus improving the reliability of the power semiconductor device, and further solving the technical problem that the reliability of the power semiconductor device is affected by reverse breakdown failure. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The accompanying drawings forming a part of this application are used to provide a further understanding of the application. The schematic embodiments of the application and their descriptions are used to explain the application and do not constitute an improper limitation to the application. In the drawings:

[0021] Figure 1 shows a schematic diagram of a driving circuit for a power semiconductor device provided in an embodiment of the present application;

[0022] Figure 2 shows a schematic diagram of another driving circuit for a power semiconductor device provided in an embodiment of the present application;

[0023] Figure 3 shows a schematic diagram of yet another driving circuit for a power semiconductor device provided in an embodiment of the present application;

[0024] Figure 4 shows a schematic diagram of still another driving circuit for a power semiconductor device provided in an embodiment of the present application;

[0025] Figure 5 shows a schematic diagram of another driving circuit for a power semiconductor device provided in an embodiment of the present application;

[0026] Figure 6 shows a schematic diagram of yet another driving circuit for a power semiconductor device provided in an embodiment of the present application;

[0027] Figure 7 shows a schematic diagram of still another driving circuit for a power semiconductor device provided in an embodiment of the present application;

[0028] Figure 8 Shows a schematic diagram of another driving circuit of a power semiconductor device provided in an embodiment of the present application;

[0029] Figure 9 Shows a schematic diagram of yet another driving circuit of a power semiconductor device provided in an embodiment of the present application;

[0030] Figure 10 Shows a schematic diagram of yet another driving circuit of a power semiconductor device provided in an embodiment of the present application;

[0031] Figure 11 Shows a schematic diagram of another driving circuit of a power semiconductor device provided in an embodiment of the present application;

[0032] Figure 12 Shows a schematic diagram of a driving circuit of a power semiconductor device provided in an embodiment of the present application;

[0033] Figure 13 Shows a schematic flow chart of a control method for a driving circuit of a power semiconductor device provided in an embodiment of the present application.

[0034] Among them, the above-mentioned drawings include the following reference numerals:

[0035] 10. First inductive commutation module; 11. Commutation sub-module; 12. Freewheeling sub-module; 13. Directional sub-module; 101. First commutation inductor; 102. First switching device; 103. Second switching device; 104. Third switching device; 105. Fourth switching device; 106. Power supply; 107. Fifth switching device; 20. Power semiconductor device; G. Gate; A. Anode; K. Cathode; 30. Second inductive commutation module; 40. Third inductive commutation module; 401. Second commutation inductor; 402. Sixth switching device; 403. Seventh switching device; 404. Eighth switching device; 405. Ninth switching device; 406. Eleventh switching device; 50. Turn-on module; 60. Turn-off maintenance module; 601. Energy storage capacitor; 602. Tenth switching device. Detailed implementation manners

[0036] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the drawings and in conjunction with the embodiments.

[0037] To enable those skilled in the art to better understand the solution of this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in this application without creative efforts shall fall within the protection scope of this application.

[0038] It should be noted that the terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances for the embodiments of this application described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device that includes a series of steps or units does not necessarily need to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0039] As introduced in the background art, in the prior art, the reverse breakdown failure of power semiconductor devices will affect the reliability of power semiconductor devices. To solve the above problems, the embodiments of this application provide a driving circuit for power semiconductor devices and a control method for the driving circuit of power semiconductor devices.

[0040] Figures 1 to 12 is a schematic diagram of a driving circuit for a power semiconductor device according to an embodiment of this application. As Figures 1 to 12 shown, the above-mentioned driving circuit at least includes a first inductive commutation module 10. The above-mentioned power semiconductor device 20 includes a gate G, a cathode K, and an anode A. Both ends of the above-mentioned first inductive commutation module 10 are respectively used for electrically connecting to the above-mentioned cathode K and the above-mentioned gate G. The above-mentioned first inductive commutation module 10 includes a commutation sub-module 11, a freewheeling sub-module 12, and a directional sub-module 13. Among them, the above-mentioned commutation sub-module 11 is used to commutate the current of the above-mentioned power semiconductor device 20 from the above-mentioned cathode K to the above-mentioned gate G. The first end of the above-mentioned commutation sub-module 11, the first end of the above-mentioned freewheeling sub-module 12, and the above-mentioned cathode K are electrically connected. The above-mentioned freewheeling sub-module 12 is used to freewheel for the above-mentioned commutation sub-module 11. The second end of the above-mentioned commutation sub-module 11 is electrically connected to the second end of the above-mentioned freewheeling sub-module 12. The third end of the above-mentioned freewheeling sub-module 12 is electrically connected to the first end of the above-mentioned directional sub-module 13. The above-mentioned directional sub-module 13 is used to control the current of the above-mentioned power semiconductor device 20 to flow from the above-mentioned gate G into the above-mentioned freewheeling sub-module 12. The second end of the above-mentioned directional sub-module 13 is electrically connected to the above-mentioned gate G.

[0041] Specifically, the working principle of the power semiconductor device is as follows: Before commutation, the current of the power semiconductor device flows from the anode to the cathode, and the device is in the on state. During commutation, through the action of the commutation sub-module, the current is guided to the gate, thereby achieving commutation. This process can effectively solve the problem of insufficient commutation speed during large-current turn-off. After commutation: The current flows to the gate, the device enters the off state, and at the same time, the commutation process is completed. In practical applications, the above-mentioned commutation sub-module may include an inductive element or a capacitive element, and commutation is achieved by means of energy storage. The above-mentioned freewheeling sub-module may include a freewheeling diode. The above-mentioned directional sub-module may include a diode, and the unidirectional conduction characteristic of the diode is used to achieve directional control of the current. The above-mentioned power semiconductor device of the present application may be one of a gate turn-off thyristor (abbreviated as GTO), a static gate turn-off thyristor (abbreviated as SGTO), a thyristor, a gate commutated thyristor (abbreviated as GCT), an integrated gate commutated thyristor (abbreviated as IGCT), and a hybrid power semiconductor device.

[0042] This embodiment provides a drive circuit for a power semiconductor device. The drive circuit at least includes a first inductive commutation module. The two ends of the first inductive commutation module are respectively used for electrically connecting to the cathode and the gate. The first inductive commutation module includes a commutation sub-module, a freewheeling sub-module, and a directional sub-module. The commutation sub-module is used to commutate the current of the power semiconductor device from the cathode to the gate. The freewheeling sub-module is used to freewheel for the commutation sub-module. The directional sub-module is used to control the current of the power semiconductor device to flow from the gate into the freewheeling sub-module. The freewheeling sub-module in the first inductive commutation module in the drive circuit of the power semiconductor device can be used as a freewheeling circuit for the commutation sub-module. The freewheeling sub-module provides an additional release path for the current in the commutation sub-module, thereby increasing the freedom of the transferred current, avoiding reverse breakdown failure of the gate and the cathode due to excessive turn-off voltage during the recovery stage after the power semiconductor device is turned off, thereby improving the reliability of the power semiconductor device, and further solving the technical problem that the reliability of the power semiconductor device is affected by reverse breakdown failure.

[0043] During the specific implementation process, such as Figures 2 to 12As shown, the above-mentioned commutation sub-module 11 includes a first commutation inductor 101, a first switching device 102, and a power supply 106. The above-mentioned freewheeling sub-module 12 includes a second switching device 103 and a third switching device 104. The above-mentioned directional sub-module 13 includes a fourth switching device 105. Among them, the first end of the first commutation inductor 101, the first end of the power supply 106, the second end of the third switching device 104, and the cathode are electrically connected. The second end of the first commutation inductor 101, the first end of the first switching device 102, and the first end of the second switching device 103 are electrically connected. The second end of the first switching device 102 is electrically connected to the second end of the power supply 106. The second end of the second switching device 103, the first end of the third switching device 104, and the first end of the fourth switching device 105 are electrically connected. The second end of the fourth switching device 105 and the gate are electrically connected. The above circuit arrangement can further simplify the commutation sub-module 11, the freewheeling sub-module 12, and the directional sub-module 13.

[0044] Specifically, the above power supply can be a voltage source. The first end of the voltage source is the negative pole, and the second end of the voltage source is the positive pole. The first switching device, the second switching device, the third switching device, and the fourth switching device can adopt mechanical switching devices, semiconductor switching devices, or other types of switching devices. In practical applications, a sampling resistor can be set in series with the first commutation inductor, and by obtaining the voltage across the sampling resistor, the current flowing through the first commutation inductor can be obtained. However, this method will increase the impedance in the circuit, thereby affecting the stability of the circuit. To solve the above problems, in another specific embodiment, the current of the first commutation inductor can be detected by detecting the voltage across the third switching device or by setting a sampling resistor in series with the third switching device. To further achieve complete decoupling of the turn-on circuit of the above power semiconductor device and the first inductor commutation module, as Figure 3 shown, in some specific embodiments of the present application, the above first inductor commutation module 10 further includes a fifth switching device 107. The first end of the fifth switching device 107 is electrically connected to the second end of the fourth switching device, and the second end of the fifth switching device 107 is electrically connected to the gate.

[0045] Specifically, the above fifth switching device can adopt a mechanical switching device, a semiconductor switching device, or other types of switching devices. In practical applications, the above fifth switching device can be used as a gating switch of the first inductor commutation module.

[0046] In other specific embodiments, as Figure 3As shown, the first switching device 102, the third switching device 104, and the fifth switching device 107 are MOS transistors. The first ends of the first switching device 102, the third switching device 104, and the fifth switching device 107 are the source electrodes of the MOS transistors. The second ends of the first switching device 102, the third switching device 104, and the fifth switching device 107 are the drain electrodes of the MOS transistors. The second switching device 103 and the fourth switching device 105 are diodes. The first ends of the second switching device 103 and the fourth switching device 105 are the cathodes of the diodes. The second ends of the second switching device 103 and the fourth switching device 105 are the anodes of the diodes. This arrangement can further save the cost of the drive circuit and reduce the control complexity of the drive circuit.

[0047] Specifically, the first commutation inductor, the first switching device, the power supply, the second switching device, the third switching device, the fourth switching device, and the fifth switching device are shown schematically. In actual applications, the above devices may be composed of multiple discrete devices connected in series or in parallel.

[0048] In some embodiments, as Figure 4 and Figure 5 shown, the drive circuit further includes: at least one second inductor commutation module 30. The circuit structure of the second inductor commutation module 30 is the same as that of the first inductor commutation module 10. The two ends of the second inductor commutation module 30 are respectively electrically connected to the cathode K and the gate G. The drive circuit in this embodiment includes the first inductor commutation module 10 and at least one second inductor commutation module 30, which can further reduce the current capacity required for the switching devices in the drive circuit, increase the charging speed of the commutation inductor, reduce the turn-off delay of the power semiconductor device 20, increase the energy tolerance of the commutation inductor, and provide fault redundancy between different second inductor commutation modules 30, thereby further improving the reliability of the drive circuit.

[0049] Specifically, the circuit structure of the second inductor commutation module is the same as that of the first inductor commutation module. That is to say, the second inductor commutation module also includes a commutation sub-module, a freewheeling sub-module, and an orientation sub-module, and the connection method is the same as that of the first inductor commutation module.

[0050] In some other specific embodiments, as Figure 6As shown, the above-mentioned drive circuit further includes: at least one third inductive commutation module 40. The third inductive commutation module 40 includes a second commutation inductor 401, a sixth switching device 402, a seventh switching device 403, an eighth switching device 404, and a ninth switching device 405. The first end of the second commutation inductor 401, the first end of the eighth switching device 404, and the cathode K are electrically connected. The first end of the sixth switching device 402 is electrically connected to the second end of the power supply. The second end of the second commutation inductor 401, the second end of the sixth switching device 402, and the first end of the seventh switching device 403 are electrically connected. The second end of the seventh switching device 403, the second end of the eighth switching device 404, and the first end of the ninth switching device 405 are electrically connected. The second end of the ninth switching device 405 is electrically connected to the gate G. As Figure 7 shown, the three-inductor commutation module further includes: an eleventh switching device 406. The first end of the eleventh switching device 406 is electrically connected to the second end of the ninth switching device 405, and the second end of the eleventh switching device 406 is electrically connected to the gate G. The drive circuit in this embodiment includes a first inductive commutation module 10 and at least one third inductive commutation module 40, which can further reduce the current capacity required for the switching devices in the drive circuit, increase the charging speed of the commutation inductor, reduce the turn-off delay of the power semiconductor device 20, increase the energy tolerance of the commutation inductor, and provide fault redundancy between different third inductive commutation modules 40, thereby further improving the reliability of the drive circuit.

[0051] Specifically, compared with the first inductive commutation module, the third inductive commutation module lacks a power supply. Each third inductive commutation module is electrically connected to the power supply in the first inductive commutation module and shares the same power supply.

[0052] In another specific embodiment, as Figure 6 and Figure 7 shown, the sixth switching device 402 and the eighth switching device 404 are MOS transistors. The first ends of the sixth switching device 402 and the eighth switching device 404 are the drains of the MOS transistors. The second ends of the sixth switching device 402 and the eighth switching device 404 are the sources of the MOS transistors. The seventh switching device 403 and the ninth switching device 405 are diodes. The first ends of the seventh switching device 403 and the ninth switching device 405 are the cathodes of the diodes. The second ends of the seventh switching device 403 and the ninth switching device 405 are the anodes of the diodes. This setting can further save the cost of the drive circuit and reduce the control complexity of the drive circuit.

[0053] Specifically, the above-mentioned second commutation inductor, sixth switching device, seventh switching device, eighth switching device, and ninth switching device are for illustration purposes. In actual applications, the above-mentioned devices can be composed of multiple discrete devices connected in series or in parallel.

[0054] As Figure 8 shown, the above-mentioned drive circuit further includes a turn-on module 50 and a turn-off maintenance module 60. Both ends of the above-mentioned turn-on module 50 and both ends of the above-mentioned turn-off maintenance module 60 are electrically connected to the above-mentioned gate G and the above-mentioned cathode K respectively. The above-mentioned turn-on module 50 is used to turn on the above-mentioned power semiconductor device 20, and the above-mentioned turn-off maintenance module 60 is used to maintain the turn-off of the above-mentioned power semiconductor device 20. The above-mentioned drive circuit can further realize the turn-on and turn-off maintenance of the power semiconductor device 20.

[0055] In some other specific embodiments, as Figures 9 to 12 shown, the above-mentioned turn-off maintenance module 60 includes an energy storage capacitor 601 and a tenth switching device 602. The first end of the above-mentioned energy storage capacitor 601 is electrically connected to the above-mentioned cathode K, the second end of the above-mentioned energy storage capacitor 601 is electrically connected to the first end of the above-mentioned tenth switching device 602, and the second end of the above-mentioned tenth switching device 602 is electrically connected to the above-mentioned gate G. This setting can further save the cost of the drive circuit and reduce the control complexity of the drive circuit.

[0056] Specifically, the above-mentioned drive circuit is divided into the following types: The first type of drive circuit includes a first inductor commutation module and a turn-off maintenance module; the second type of drive circuit includes a first inductor commutation module, at least one second inductor commutation module, and a turn-off maintenance module; the third type of drive circuit includes a first inductor commutation module, at least one third inductor commutation module, and a turn-off maintenance module. And, in the above-mentioned drive circuit, the first inductor commutation module or the second inductor commutation module may include the above-mentioned fifth switching device, or may not include the above-mentioned fifth switching device. The third inductor commutation module may include the above-mentioned eleventh switching device, or may not include the above-mentioned eleventh switching device.

[0057] As Figures 9 to 12 shown, the above-mentioned tenth switching device 602 is a MOS transistor, the first end of the above-mentioned tenth switching device 602 is the source electrode of the above-mentioned MOS transistor, and the second end of the above-mentioned tenth switching device 602 is the drain electrode of the above-mentioned MOS transistor. This setting can further save the cost of the drive circuit and reduce the control complexity of the drive circuit.

[0058] Specifically, the above-mentioned energy storage capacitor and the tenth switching device are for illustration purposes. In actual applications, the above-mentioned devices can be composed of multiple discrete devices connected in series or in parallel.

[0059] The embodiment of the present application also provides a control method for a drive circuit of a power semiconductor device. Figure 13It is a schematic diagram of a control method for a driving circuit of a power semiconductor device according to an embodiment of the present application. As Figure 13 shown, the method includes:

[0060] Step S701, when the above-mentioned power semiconductor device starts to conduct, control to turn off the above-mentioned first switching device and the above-mentioned third switching device;

[0061] Step S702, when the above-mentioned power semiconductor device starts to turn off, control to turn on the above-mentioned first switching device to increase the current of the above-mentioned first commutation inductor. When the current of the above-mentioned first commutation inductor is greater than the current of the anode, control to turn on the above-mentioned third switching device and turn off the above-mentioned first switching device to reduce the current of the above-mentioned first commutation inductor, and then control to turn off the above-mentioned third switching device to enable the above-mentioned power semiconductor device to complete turning off;

[0062] Step S703, when the above-mentioned power semiconductor device finishes turning off, control to turn on the above-mentioned third switching device.

[0063] Specifically, the control method for the driving circuit of the power semiconductor device as Figure 9 shown is as follows: When the first switching device 102 is controlled to conduct and the third switching device 104 is controlled to be open-circuited, the current of the first commutation inductor 101 increases under the action of the power supply 106. When the first switching device 102 is controlled to be open-circuited and the third switching device 104 is controlled to conduct, the current of the first commutation inductor 101 decreases under the voltage drop of the third switching device 104, the second switching device 103 and the line loss. By controlling the ratio of the conduction time of the two groups of switches, the magnitude of the current of the first commutation inductor 101 can be accurately controlled. When the power semiconductor device 20 conducts, by detecting the current of the anode A and controlling the ratio of the conduction time of the two groups of switches, the current of the first commutation inductor 101 is continuously slightly greater than the anode current; when the power semiconductor device 20 is about to turn off, the third switching device 104 and the first switching device 102 are immediately controlled to be open-circuited, and the current of the anode A is commutated through the gate G first inductance commutation module 10 to the cathode K to achieve hard turn-off.

[0064] This embodiment provides a control method for a driving circuit of a power semiconductor device. When the power semiconductor device starts to conduct, the first switching device and the third switching device are controlled to turn off; when the power semiconductor device starts to turn off, the first switching device is controlled to conduct to increase the current in the first commutation inductor. When the current in the first commutation inductor is greater than the anode current, the third switching device is controlled to conduct and the first switching device is controlled to turn off to reduce the current in the first commutation inductor, and then the third switching device is controlled to turn off to complete the turn-off of the power semiconductor device; when the turn-off of the power semiconductor device is completed, the third switching device is controlled to conduct. In this method, in different working stages of the power semiconductor device, through different control methods of the first switching device and the second switching device, the freewheeling sub-module can be used as the freewheeling circuit of the commutation sub-module. The freewheeling sub-module provides an additional release path for the current in the commutation sub-module, thereby increasing the freedom of the transferred current, avoiding the gate and cathode from being reversely broken down due to excessive turn-off voltage during the recovery stage after the power semiconductor device is turned off, thus improving the reliability of the power semiconductor device, and further solving the technical problem that the reliability of the power semiconductor device is affected by reverse breakdown failure.

[0065] As an alternative solution, the above first inductive commutation module further includes a fifth switching device. The first end of the fifth switching device is electrically connected to the second end of the fourth switching device, and the second end of the fifth switching device is electrically connected to the gate. The method further includes: Step S704, when the power semiconductor device starts to conduct, controlling the fifth switching device to turn off; Step S705, when the power semiconductor device starts to turn off, while controlling the third switching device to turn off, controlling the fifth switching device to conduct. The above method can further achieve complete decoupling of the turn-on circuit of the power semiconductor device and the first inductive commutation module.

[0066] Specifically, as Figure 10The control method of the drive circuit of the power semiconductor device shown is as follows: When the power semiconductor device 20 is turned on, the first switching device 102, the third switching device 104, and the tenth switching device 602 are open-circuited, and the anode current A flows directly out from the cathode K. At this time, the turn-on circuit and the turn-on maintenance circuit in the drive circuit inject current into the gate G. Since the conduction voltage drop of the PN junction between the gate G and the cathode K is generally lower than the sum of the conduction voltage drops of the second switching device 103 and the fourth switching device 105, the injected current will not charge the first commutation inductor 101 through the above two series diodes. The fifth switching device 107 is used to ensure complete decoupling of the turn-on circuit, the turn-on maintenance circuit, and the first inductor commutation module 10. The fifth switching device 107 is also in an open-circuit state when the power semiconductor device 20 is turned on. When the power semiconductor device 20 is about to turn off, the first switching device 102 is controlled to conduct, and the power supply 106 charges the first commutation inductor 101 to a current greater than the current of the anode A of the power semiconductor device 20. Then, the third switching device 104 is controlled to conduct and the first switching device 102 is controlled to open-circuit. The first commutation inductor 101 continues to flow through the third switching device 104 and the second switching device 103. Due to the existence of line losses, switch and diode voltage drops, the current of the first commutation inductor 101 slightly decreases but is still greater than the current of the anode A. Then, the fifth switching device 107 is controlled to conduct and the third switching device 104 is controlled to disconnect. The requirement for the first commutation inductor 101 to continue to flow causes the current of the anode A to enter the cathode K through the gate G, the fifth switching device 107, the fourth switching device 105, the second switching device 103, and the first commutation inductor 101 to achieve hard turn-off, and the power semiconductor device 20 completes the turn-off; after the power semiconductor device 20 completes the turn-off, the tenth switching device 602 conducts, and the energy storage capacitor 601 keeps the power semiconductor device 20 in a reliable turn-off state. The remaining current of the first commutation inductor 101 is injected into the energy storage capacitor 601 to increase its voltage. When it is detected that the voltage of the energy storage capacitor 601 reaches a certain threshold, the third switching device 104 conducts, and the first commutation inductor 101 releases energy through the second switching device 103 and the third switching device 104 to prevent the gate-cathode reverse breakdown failure of the power semiconductor device 20 caused by the excessive voltage of the energy storage capacitor 601; when the power semiconductor device 20 is about to turn on, the tenth switching device 602 is controlled to open-circuit, and the turn-on and turn-on maintenance circuits in the drive operate normally.

[0067] An alternative solution is that the above driving circuit further includes: at least one second inductive commutation module. The circuit structure of the second inductive commutation module is the same as that of the first inductive commutation module. The two ends of the second inductive commutation module are respectively electrically connected to the cathode and the gate. The method further includes: Step S706, when the power semiconductor device starts to conduct, control to turn off the first switching device and the third switching device in each of the second inductive commutation modules; Step S707, when the power semiconductor device starts to turn off, control to turn on the first switching device in each of the second inductive commutation modules to increase the current of the first commutation inductor in each of the second inductive commutation modules. When the current of the first commutation inductor in each of the second inductive commutation modules is greater than the current of the anode, control to turn on the third switching device in each of the second inductive commutation modules and turn off the first switching device in each of the second inductive commutation modules to reduce the current of the first commutation inductor in each of the second inductive commutation modules, and then control to turn off the third switching device in each of the second inductive commutation modules to complete the turn-off of the power semiconductor device; Step S708, when the turn-off of the power semiconductor device is completed, control to turn on the third switching device in each of the second inductive commutation modules. The above method can further reduce the current capacity required by the switching devices in the driving circuit, improve the charging speed of the commutation inductor, reduce the turn-off delay of the power semiconductor device, improve the energy tolerance of the commutation inductor, and provide fault redundancy between different second inductive commutation modules, thereby further improving the reliability of the driving circuit.

[0068] Specifically, as Figure 5 shown, the control method of the driving circuit of the power semiconductor device is as follows:

[0069] First, the corresponding switches (the first switching device 102 or the third switching device 104 with the same label) in the first inductive commutation module 10 and the second inductive commutation module 30 act simultaneously.

[0070] Second, the first inductive commutation module 10 and the second inductive commutation module 30 simultaneously turn on the first switching device 102 to charge the first commutation inductor 101. By controlling the conduction time ratio of the third switching device 104 and the first switching device 102, the sum of the currents on each first commutation inductor 101 is greater than the current of the anode A during turn-off, and the currents on each first commutation inductor 101 can be different. The third switching device 104 is turned off and the fifth switching device 107 is turned on in a time-sharing manner to achieve an arbitrary commutation current with continuous time domain.

[0071] The above driving circuit further includes: at least one third inductive commutation module. The three-inductor commutation module includes a second commutation inductor, a sixth switching device, a seventh switching device, an eighth switching device, and a ninth switching device. The first end of the second commutation inductor, the first end of the eighth switching device, and the cathode are electrically connected. The first end of the sixth switching device is electrically connected to the second end of the power supply. The second end of the second commutation inductor, the second end of the sixth switching device, and the first end of the seventh switching device are electrically connected. The second end of the seventh switching device, the second end of the eighth switching device, and the first end of the ninth switching device are electrically connected. The second end of the ninth switching device is electrically connected to the gate. The method further includes: Step S709, when the power semiconductor device starts to conduct, controlling to turn off each of the sixth switching device and the eighth switching device; Step S710, when the power semiconductor device starts to turn off, controlling to turn on each of the sixth switching devices to increase the current of the corresponding second commutation inductor. When the current of the second commutation inductor is greater than the current of the anode, controlling to turn on the eighth switching device and turn off the sixth switching device to reduce the current of the second commutation inductor, and then controlling to turn off each of the eighth switching devices to complete the turn-off of the power semiconductor device; Step S711, when the turn-off of the power semiconductor device is completed, controlling to turn on each of the eighth switching devices. The above method can further reduce the current capacity required for the switching devices in the driving circuit, improve the charging speed of the commutation inductor, reduce the turn-off delay of the power semiconductor device, improve the energy tolerance of the commutation inductor, and provide fault redundancy between different third inductive commutation modules, thereby further improving the reliability of the driving circuit.

[0072] Specifically, as Figure 7 shown, the control method of the driving circuit of the power semiconductor device is as follows:

[0073] First, the corresponding switches (the first switching device 102 and the sixth switching device 402 or the third switching device 104 and the eighth switching device 404) in the first inductive commutation module 10 and the third inductive commutation module 40 act simultaneously.

[0074] Second, the first inductive commutation module 10 turns on the first switching device 102 to charge the first commutation inductor 101, and at the same time, the third inductive commutation module 40 turns on the sixth switching device 402 to charge the second commutation inductor 401. By controlling the conduction time ratio of the eighth switching device 404 and the sixth switching device 402, the sum of the currents on each second commutation inductor 401 is made greater than the current of the anode A when turning off. The currents on each second commutation inductor 401 can be different, and the eighth switching device 404 is turned off and the eleventh switching device 406 is turned on in a time-sharing manner to achieve any commutation current that is continuous in the time domain.

[0075] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0076] 1) The driving circuit of the power semiconductor device of the present application. The driving circuit at least includes a first inductive commutation module. The two ends of the first inductive commutation module are respectively used for electrically connecting to the cathode and the gate. The first inductive commutation module includes a commutation sub-module, a freewheeling sub-module, and a directional sub-module. The commutation sub-module is used to commutate the current of the power semiconductor device from the cathode to the gate. The freewheeling sub-module is used to freewheel for the commutation sub-module. The directional sub-module is used to control the current of the power semiconductor device to flow from the gate into the freewheeling sub-module. The freewheeling sub-module in the first inductive commutation module in the driving circuit of the power semiconductor device can be used as the freewheeling circuit of the commutation sub-module. The freewheeling sub-module provides an additional release path for the current in the commutation sub-module, thereby increasing the freedom of the transferred current, avoiding the gate and the cathode from being reversely broken down due to too high a turn-off voltage during the recovery stage after the power semiconductor device is turned off, thus improving the reliability of the power semiconductor device, and further solving the technical problem that the reliability of the power semiconductor device is affected by reverse breakdown failure.

[0077] 2) The control method of the driving circuit of the power semiconductor device of the present application. When the power semiconductor device starts to conduct, control to turn off the first switching device and the third switching device; when the power semiconductor device starts to turn off, control to turn on the first switching device to increase the current of the first commutation inductor. When the current of the first commutation inductor is greater than the current of the anode, control to turn on the third switching device and turn off the first switching device to reduce the current of the first commutation inductor, and then control to turn off the third switching device to make the power semiconductor device complete the turn-off; when the power semiconductor device completes the turn-off, control to turn on the third switching device. In this method, through different control methods of the first switching device and the second switching device at different working stages of the power semiconductor device, the freewheeling sub-module can be used as the freewheeling circuit of the commutation sub-module. The freewheeling sub-module provides an additional release path for the current in the commutation sub-module, thereby increasing the freedom of the transferred current, avoiding the gate and the cathode from being reversely broken down due to too high a turn-off voltage during the recovery stage after the power semiconductor device is turned off, thus improving the reliability of the power semiconductor device, and further solving the technical problem that the reliability of the power semiconductor device is affected by reverse breakdown failure.

[0078] The above are only the preferred embodiments of the present application and are not used to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A driving circuit for a power semiconductor device, characterized in that: The drive circuit at least includes a first inductor commutation module, the power semiconductor device includes a gate, a cathode and an anode, two ends of the first inductor commutation module are respectively used to be electrically connected to the cathode and the gate, the first inductor commutation module includes a commutation submodule, a freewheeling submodule and a directional submodule, wherein: The commutation submodule is used to commutate the current of the power semiconductor device from the cathode to the gate, and the first end of the commutation submodule, the first end of the freewheeling submodule and the cathode are electrically connected. The freewheeling submodule is used for freewheeling the commutation submodule, the second end of the commutation submodule is electrically connected to the second end of the freewheeling submodule, and the third end of the freewheeling submodule is electrically connected to the first end of the directional submodule. The directional submodule is used to control the current of the power semiconductor device to flow from the gate into the freewheeling submodule, the second end of the directional submodule is electrically connected to the gate, the commutation submodule includes a first commutation inductor, a first switching device and a power supply, the freewheeling submodule includes a second switching device and a third switching device, and the directional submodule includes a fourth switching device, wherein the first end of the first commutation inductor, the first end of the power supply, the second end of the third switching device and the cathode are electrically connected, the second end of the first commutation inductor, the first end of the first switching device and the first end of the second switching device are electrically connected, the second end of the first switching device is electrically connected to the second end of the power supply, the second end of the second switching device, the first end of the third switching device and the first end of the fourth switching device are electrically connected, and the second end of the fourth switching device is electrically connected to the gate.

2. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The first inductive commutation module further includes a fifth switching device, a first end of the fifth switching device is electrically connected to a second end of the fourth switching device, and a second end of the fifth switching device is electrically connected to the gate.

3. The driving circuit of the power semiconductor device according to claim 2, characterized in that: The first switch device, the third switch device and the fifth switch device are MOS tubes, the first end of the first switch device, the first end of the third switch device and the first end of the fifth switch device are sources of the MOS tubes, the second end of the first switch device, the second end of the third switch device and the second end of the fifth switch device are drains of the MOS tubes, the second switch device and the fourth switch device are diodes, the first end of the second switch device and the first end of the fourth switch device are cathodes of the diodes, and the second end of the second switch device and the second end of the fourth switch device are anodes of the diodes.

4. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The driving circuit also includes: at least one second inductive commutation module, the circuit structure of the second inductive commutation module is the same as the circuit structure of the first inductive commutation module, and two ends of the second inductive commutation module are electrically connected to the cathode and the gate respectively.

5. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The drive circuit also includes: at least one third inductor commutation module, the three-inductor commutation module includes a second commutation inductor, a sixth switch device, a seventh switch device, an eighth switch device and a ninth switch device, the first end of the second commutation inductor, the first end of the eighth switch device and the cathode are electrically connected, the first end of the sixth switch device is electrically connected to the second end of the power supply, the second end of the second commutation inductor, the second end of the sixth switch device and the first end of the seventh switch device are electrically connected, the second end of the seventh switch device, the second end of the eighth switch device and the first end of the ninth switch device are electrically connected, and the second end of the ninth switch device is electrically connected to the gate.

6. The driving circuit of the power semiconductor device according to claim 5, characterized in that: The sixth switching device and the eighth switching device are MOS tubes, the first end of the sixth switching device and the first end of the eighth switching device are drains of the MOS tubes, the second end of the sixth switching device and the second end of the eighth switching device are sources of the MOS tubes, the seventh switching device and the ninth switching device are diodes, the first end of the seventh switching device and the first end of the ninth switching device are cathodes of the diodes, and the second end of the seventh switching device and the second end of the ninth switching device are anodes of the diodes.

7. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The driving circuit also includes an opening module and a closing maintaining module, wherein both ends of the opening module and both ends of the closing maintaining module are electrically connected to the gate and the cathode respectively, the opening module is used to open the power semiconductor device, and the closing maintaining module is used to maintain the power semiconductor device closed.

8. The driving circuit of the power semiconductor device according to claim 7, characterized in that: The shutdown maintaining module includes an energy storage capacitor and a tenth switching device, wherein the first end of the energy storage capacitor is electrically connected to the cathode, the second end of the energy storage capacitor is electrically connected to the first end of the tenth switching device, and the second end of the tenth switching device is electrically connected to the gate.

9. The driving circuit of the power semiconductor device according to claim 8, characterized in that: The tenth switch device is a MOS tube, the first end of the tenth switch device is the source of the MOS tube, and the second end of the tenth switch device is the drain of the MOS tube.

10. A method for controlling a driving circuit of a power semiconductor device, characterized in that: The method applied to the driving circuit of the power semiconductor device according to any one of claims 1 to 9 comprises: When the power semiconductor device starts to be turned on, controlling to turn off the first switching device and the third switching device; When the power semiconductor device starts to turn off, the first switching device is controlled to be turned on to increase the current of the first commutation inductor, and when the current of the first commutation inductor is greater than the current of the anode, the third switching device is controlled to be turned on and the first switching device is turned off to reduce the current of the first commutation inductor, and then the third switching device is controlled to be turned off to complete the shutdown of the power semiconductor device; When the power semiconductor device is completely turned off, the third switching device is controlled to be turned on.

11. The control method of the driving circuit of the power semiconductor device according to claim 10, characterized in that: The first inductive commutation module further includes a fifth switch device, a first end of the fifth switch device is electrically connected to a second end of the fourth switch device, and a second end of the fifth switch device is electrically connected to the gate electrode, and the method further includes: When the power semiconductor device starts to conduct, controlling to turn off the fifth switch device; When the power semiconductor device starts to be turned off, the third switching device is controlled to be turned off and the fifth switching device is controlled to be turned on.

12. The control method of the driving circuit of the power semiconductor device according to claim 10, characterized in that: The driving circuit further includes: at least one second inductor commutation module, the circuit structure of the second inductor commutation module is the same as the circuit structure of the first inductor commutation module, and two ends of the second inductor commutation module are electrically connected to the cathode and the gate, respectively. The method further includes: When the power semiconductor device starts to be turned on, controlling to turn off the first switch device and the third switch device in each of the second inductive commutation modules; When the power semiconductor device starts to shut down, the first switch device in each of the second inductor commutation modules is controlled to be turned on to increase the current of the first commutation inductor in each of the second inductor commutation modules; when the current of the first commutation inductor in each of the second inductor commutation modules is greater than the current of the anode, the third switch device in each of the second inductor commutation modules is controlled to be turned on and the first switch device in each of the second inductor commutation modules is turned off to reduce the current of the first commutation inductor in each of the second inductor commutation modules; and then the third switch device in each of the second inductor commutation modules is controlled to be turned off to complete the shutdown of the power semiconductor device; When the power semiconductor device is completely turned off, the third switch device in each of the second inductor commutation modules is controlled to be turned on.

13. The control method of the driving circuit of the power semiconductor device according to claim 10, characterized in that: The drive circuit further includes: at least one third inductor commutation module, the three-inductor commutation module includes a second commutation inductor, a sixth switch device, a seventh switch device, an eighth switch device and a ninth switch device, a first end of the second commutation inductor, a first end of the eighth switch device and the cathode are electrically connected, a first end of the sixth switch device is electrically connected to a second end of the power supply, a second end of the second commutation inductor, a second end of the sixth switch device and a first end of the seventh switch device are electrically connected, a second end of the seventh switch device, a second end of the eighth switch device and a first end of the ninth switch device are electrically connected, and a second end of the ninth switch device is electrically connected to the gate, and the method further includes: When the power semiconductor device starts to be turned on, controlling to turn off each of the sixth switching device and the eighth switching device; When the power semiconductor device starts to turn off, each of the sixth switching devices is controlled to be turned on to increase the current of the corresponding second commutation inductor; when the current of the second commutation inductor is greater than the current of the anode, the eighth switching device is controlled to be turned on and the sixth switching device is turned off to reduce the current of the second commutation inductor, and then each of the eighth switching devices is controlled to be turned off to complete the shutdown of the power semiconductor device; When the power semiconductor device is completely turned off, each of the eighth switching devices is controlled to be turned on.

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