Drive Circuit of Power Semiconductor Device, Control Method Thereof, and Electronic System

Abstract

The present application provides a driving circuit for a power semiconductor device, a control method thereof, and an electronic system. The driving circuit for the power semiconductor device includes a power supply module, a maintaining module, a signal detection module, and a control module. Two ends of the maintaining module are respectively used for electrically connecting to the gate electrode and the cathode. The first end of the signal detection module is electrically connected to the anode or the cathode. The second end of the signal detection module is electrically connected to the first end of the control module. The second end of the control module is electrically connected to the power supply module. The third end of the control module is electrically connected to the maintaining module. The signal detection module is used for detecting an electrical signal of the power semiconductor device and outputting a fault signal to the control module when the electrical signal is greater than a signal threshold. The control module is used for responding to the fault signal and outputting a turn-off signal to the maintaining module. This driving circuit solves the technical problem of how to achieve overcurrent protection of the power semiconductor device in the prior art.

Description

Technical Field

[0001] The present application relates to the field of circuits, and in particular, to a driving circuit for a power semiconductor device, a control method for the driving circuit of the power semiconductor device, and an electronic system. Background Art

[0002] Power semiconductor devices are widely used in the fields of industrial variable frequency speed regulation, new energy grid connection, rail transit, ships, high-voltage direct current power transmission, etc. Taking thyristors as an example, the driving circuit of thyristors in the prior art is as Figure 1 shown. Its circuit mainly includes a power supply structure 10`, a maintaining structure 20`, a turning-on structure 30`, a circuit control structure 40`, and a turning-off structure 60`. Among them, the power supply structure 10` supplies power to the maintaining structure 20`, the turning-on structure 30`, and the turning-off structure 60`. One ends of the maintaining structure 20`, the turning-on structure 30`, and the turning-off structure 60` are electrically connected to the gate of the thyristor 50`, and the other ends are electrically connected to the cathode of the thyristor 50`. The power semiconductor device cooperates with components such as capacitors and inductors in the turn-on and turn-off modules through forward and reverse bias voltages to achieve different turn-on and turn-off current pulses. Therefore, during its turn-off process, it cannot be directly regulated by voltage. Once the power semiconductor device itself exceeds its maximum turn-off current, it will cause the device to fail to turn off, and the power semiconductor device driven by a current source cannot form an effective over-current protection within an extremely short time.

[0003] Therefore, there is an urgent need for a driving circuit of a power semiconductor device that can achieve over-current protection of the power semiconductor device. Summary of the Invention

[0004] The main purpose of the present application is to provide a driving circuit for a power semiconductor device, a control method for the driving circuit of the power semiconductor device, and an electronic system, so as to at least solve the problem of how to achieve over-current protection of the power semiconductor device in the prior art.

[0005] According to an aspect of the present application, there is provided a driving circuit for a power semiconductor device, including a power supply module, a maintaining module, a signal detection module, and a control module. Among them, the power semiconductor device includes a gate, a cathode, and an anode. Both ends of the maintaining module are respectively used for being electrically connected to the gate and the cathode. The first end of the signal detection module is electrically connected to the anode or the cathode. The second end of the signal detection module is electrically connected to the first end of the control module. The second end of the control module is electrically connected to the power supply module. The third end of the control module is electrically connected to the maintaining module. The signal detection module is used to detect the electrical signal of the power semiconductor device, and output a fault signal to the control module when the electrical signal is greater than a signal threshold. The control module is used to respond to the fault signal and output a turn-off signal to the maintaining module.

[0006] Optionally, the signal detection module includes a first impedance, a second impedance, a third impedance, a fourth impedance, a first amplifying device, and a second amplifying device. Among them, the first end of the first impedance is the first end of the signal detection module. The second end of the first impedance, the first end of the first amplifying device, the first end of the third impedance, and the first end of the fourth impedance are electrically connected. The first end of the second impedance is electrically connected to the ground terminal. The second end of the second impedance is electrically connected to the second end of the first amplifying device. The first end of the second amplifying device is used to input the signal threshold. The second end of the third impedance, the second end of the fourth impedance, the third end of the first amplifying device, and the second end of the second amplifying device are electrically connected. The third end of the second amplifying device is used to output the fault signal.

[0007] Optionally, the first impedance, the second impedance, and the third impedance are resistors, the fourth impedance is a capacitor, the first amplifying device and the second amplifying device are operational amplifiers. The first end of the first amplifying device and the first end of the second amplifying device are the non-inverting input terminals of the operational amplifier. The second end of the first amplifying device and the second end of the second amplifying device are the inverting input terminals of the operational amplifier. The third end of the first amplifying device and the third end of the second amplifying device are the output terminals of the operational amplifier.

[0008] Optionally, the signal detection module includes a fifth impedance, a sixth impedance, a seventh impedance, an eighth impedance, a ninth impedance, a tenth impedance, an eleventh impedance, a twelfth impedance, a third amplifying device, a fourth amplifying device, and a fifth amplifying device. Among them, the first end of the fifth impedance is the first end of the signal detection module. The second end of the fifth impedance, the first end of the third amplifying device, the first end of the seventh impedance, and the first end of the eighth impedance are electrically connected. The first end of the sixth impedance is electrically connected to the ground terminal. The second end of the sixth impedance is electrically connected to the second end of the third amplifying device. The second end of the seventh impedance, the second end of the eighth impedance, the third end of the third amplifying device, and the first end of the ninth impedance are electrically connected. The second end of the ninth impedance, the second end of the fourth amplifying device, the first end of the eleventh impedance, and the first end of the twelfth impedance are electrically connected. The first end of the tenth impedance is electrically connected to the ground terminal. The second end of the tenth impedance is electrically connected to the first end of the fourth amplifying device. The second end of the eleventh impedance, the second end of the twelfth impedance, the third end of the fourth amplifying device, and the first end of the fifth amplifying device are electrically connected. The second end of the fifth amplifying device is used to input the signal threshold. The third end of the fifth amplifying device is used to output the fault signal.

[0009] Optionally, the fifth impedance, the sixth impedance, the seventh impedance, the tenth impedance, and the eleventh impedance are resistors, the eighth impedance, the ninth impedance, and the twelfth impedance are capacitors, the third amplifying device, the fourth amplifying device, and the fifth amplifying device are operational amplifiers, the first ends of the third amplifying device, the fourth amplifying device, and the fifth amplifying device are the non-inverting input terminals of the operational amplifiers, the second ends of the third amplifying device, the fourth amplifying device, and the fifth amplifying device are the inverting input terminals of the operational amplifiers, and the third ends of the third amplifying device, the fourth amplifying device, and the fifth amplifying device are the output terminals of the operational amplifiers.

[0010] Optionally, the control module includes a switching device. The first end of the switching device is the first end of the control module, the second end of the switching device is the second end of the control module, and the third end of the switching device is the third end of the control module.

[0011] Optionally, the switching device is a MOS transistor. The first end of the switching device is the gate of the MOS transistor, the second end of the switching device is the source of the MOS transistor, and the third end of the switching device is the drain of the MOS transistor.

[0012] Optionally, the electrical signal is a current signal, and the first end of the signal detection module is electrically connected to the anode or cathode of the power semiconductor device.

[0013] Optionally, the electrical signal is a voltage signal, and the first end of the signal detection module is electrically connected to the anode of the power semiconductor device.

[0014] According to another aspect of the present application, there is provided a control method for a driving circuit of any one of the power semiconductor devices, including: the signal detection module detects an electrical signal of the power semiconductor device; determining whether the electrical signal is greater than the signal threshold; when the electrical signal is greater than the signal threshold, the signal detection module outputs a fault signal to the control module, and the control module outputs a turn-off signal to the maintenance module in response to the fault signal to turn off the maintenance module; when the electrical signal is less than or equal to the signal threshold, the maintenance module operates normally.

[0015] According to still another aspect of the present application, there is provided an electronic system, including a power semiconductor device and a driving circuit of any one of the power semiconductor devices, and the driving circuit of the power semiconductor device is used to drive the power semiconductor device.

[0016] Optionally, the power semiconductor device is one of IGBT, GTO, SGTO, ETO, Thyristor, GCT, IGCT, and hybrid power semiconductor devices.

[0017] Applying the technical solution of the present application, a signal detection module and a control module are added to the existing driving circuit of the power semiconductor device. The electrical signal of the power semiconductor device is detected by the detection module, and according to the magnitude relationship between the electrical signal and the signal threshold, it is determined whether an overcurrent phenomenon will occur. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon occurs, and a fault signal is output to the control module to further trigger the turn-off of the maintenance module, thereby turning off the maintenance current, reducing the overcurrent flowing through the device, and finally realizing the reliable turn-off and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of the power semiconductor device in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The specification drawings forming a part of the present application are used to provide a further understanding of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation to the present application. In the drawings:

[0019] Figure 1 Shows the circuit diagram of a driving circuit of a power semiconductor device in the prior art;

[0020] Figure 2 Shows the circuit diagram of a driving circuit of a power semiconductor device provided in the embodiment of the present application;

[0021] Figure 3 Shows the circuit diagram of another driving circuit of a power semiconductor device provided in the embodiment of the present application;

[0022] Figure 4 Shows the circuit diagram of a signal detection module provided in the embodiment of the present application;

[0023] Figure 5 Shows the circuit diagram of another signal detection module provided in the embodiment of the present application;

[0024] Figure 6 Shows the circuit diagram of still another driving circuit of a power semiconductor device provided in the embodiment of the present application;

[0025] Figure 7 Shows the schematic flow diagram of a driving method of a driving circuit of a power semiconductor device provided in the embodiment of the present application.

[0026] The above-mentioned drawings include the following reference numerals:

[0027] 10`, Power supply structure; 20`, Maintenance structure; 30`, Turn-on structure; 40`, Circuit control structure; 50`, Thyristor; 60`, Turn-off structure;

[0028] 10, Power supply module; 20, Maintenance module; 30, Signal detection module; 40, Control module; 50, Power semiconductor device; 301, First impedance; 302, Second impedance; 303, Third impedance; 304, Fourth impedance; 305, First amplifier device; 306, Second amplifier device; 307, Fifth impedance; 308, Sixth impedance; 309, Seventh impedance; 310, Eighth impedance; 311, Ninth impedance; 312, Tenth impedance; 313, Eleventh impedance; 314, Twelfth impedance; 315, Third amplifier device; 316, Fourth amplifier device; 317, Fifth amplifier device; 401, Switching device. Detailed implementation manners

[0029] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the drawings and in combination with the embodiments.

[0030] In order to enable those skilled in the art to better understand the solution of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0031] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above drawings are used to distinguish similar objects, and do not necessarily need to be used to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so as to describe the embodiments of the present application here. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units does not necessarily need to be limited to those clearly listed steps or units, but may include other steps or units not clearly listed or inherent to these process, method, product or device.

[0032] As introduced in the background art, in the prior art, power semiconductor devices are prone to overcurrent phenomena. To solve the above problems, the embodiments of the present application provide a drive circuit for a power semiconductor device, a control method for the drive circuit of the power semiconductor device, and an electronic system.

[0033] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention.

[0034] Figure 2 , Figure 3 and Figure 6 is a circuit diagram of a drive circuit for a power semiconductor device according to an embodiment of the present application. As Figure 2 , Figure 3 and Figure 6 shown, it includes a power supply module 10, a maintenance module 20, a signal detection module 30, and a control module 40. Among them, the power semiconductor device 50 includes a gate, a cathode, and an anode. Both ends of the maintenance module 20 are respectively used for electrically connecting to the gate and the cathode. The first end of the signal detection module 30 is electrically connected to the anode or the cathode. The second end of the signal detection module 30 is electrically connected to the first end of the control module 40. The second end of the control module 40 is electrically connected to the power supply module 10. The third end of the control module 40 is electrically connected to the maintenance module 20. The signal detection module 30 is used to detect the electrical signal of the power semiconductor device 50, and output a fault signal to the control module 40 when the electrical signal is greater than the signal threshold. The control module 40 is used to respond to the fault signal and output a turn-off signal to the maintenance module 20.

[0035] Specifically, the drive circuit of the power semiconductor device refers to a circuit system that provides appropriate voltage and current to the power semiconductor device to precisely control its switching state. The power supply module is used to supply power to the maintenance module and the control module respectively. The maintenance module is used to provide a maintenance current to the power semiconductor. The maintenance module may include a switching device and an inductor element. The electrical signal detected by the signal detection module can be a voltage signal or a current signal. In practical applications, a multi-stage amplifier circuit or a filter circuit can be set in the signal detection module to improve the sensitivity of the electrical signal detection and reduce the false alarm rate at the same time. The control module is used to control the maintenance module according to whether a fault signal is received.

[0036] When a power semiconductor device is conducting current normally, a gate current needs to be continuously injected through the gate to maintain the bipolar forward gain inside the device, and this gate current is provided by a maintenance module. When the gate injection current is removed, the gain effect inside the device will rapidly decay, and at this time, the device will enter the off state, and the current conduction inside the device will start to decrease. Based on this principle, by collecting the electrical signal of the semiconductor power device and judging whether the device has an overcurrent according to the magnitude relationship between this electrical signal and the signal threshold, when an overcurrent occurs, a fault signal is sent to the control module, and the control module sends a turn-off signal to the maintenance module. At this time, it enters the de-gain stage, and the current of the power semiconductor device starts to decrease. When it decreases to the gate turn-off current, this process is repeated and a maintenance current is input to the gate. It should be noted that Figure 2 The first end of the signal detection module 30 in [[ ]] is electrically connected to the anode. Figure 3 The first end of the signal detection module 30 in [[ ]] is electrically connected to the cathode. The above signal threshold can be the maximum turn-off current of the power semiconductor device.

[0037] Through this embodiment, a signal detection module and a control module are added to the existing drive circuit of the power semiconductor device. The electrical signal of the power semiconductor device is detected by the detection module, and whether an overcurrent phenomenon will occur is judged according to the magnitude relationship between this electrical signal and the signal threshold. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the turn-off of the maintenance module, thereby turning off the maintenance current, enabling the power semiconductor device to enter the de-gain stage, so as to reduce the current flowing through the device until it is below the maximum turn-off current, and finally realize the reliable turn-off and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of the power semiconductor device in the prior art.

[0038] During the specific implementation process, such as Figure 4As shown, the above signal detection module includes a first impedance 301, a second impedance 302, a third impedance 303, a fourth impedance 304, a first amplification device 305, and a second amplification device 306. Among them, the first end of the first impedance 301 is the first end of the signal detection module. The second end of the first impedance 301, the first end of the first amplification device 305, the first end of the third impedance 303, and the first end of the fourth impedance 304 are electrically connected. The first end of the second impedance 302 is electrically connected to the ground terminal. The second end of the second impedance 302 is electrically connected to the second end of the first amplification device 305. The first end of the second amplification device 306 is used to input the signal threshold. The second end of the third impedance 303, the second end of the fourth impedance 304, the third end of the first amplification device 305, and the second end of the second amplification device 306 are electrically connected. The third end of the second amplification device 306 is used to output the fault signal. The above signal detection module can further improve the accuracy and stability of signal processing.

[0039] Specifically, the above signal detection module realizes signal detection and post-processing through a differential circuit. The differential circuit can effectively suppress the common-mode signal, that is, it has a lower gain or even completely eliminates the same signal (such as noise or interference) that exists simultaneously at the two input terminals. This makes it perform excellently in anti-interference.

[0040] To further simplify the above signal detection module, as Figure 4 shown, the first impedance 301, the second impedance 302, and the third impedance 303 of the present application are resistors, the fourth impedance 304 is a capacitor, the first amplification device 305 and the second amplification device 306 are operational amplifiers. The first end of the first amplification device 305 and the first end of the second amplification device 306 are the non-inverting input terminals of the operational amplifier. The second end of the first amplification device 305 and the second end of the second amplification device 306 are the inverting input terminals of the operational amplifier. The third end of the first amplification device 305 and the third end of the second amplification device 306 are the output terminals of the operational amplifier.

[0041] In practical applications, the resistance values of the first impedance, the second impedance, and the third impedance can be set according to the actual situation, and the capacitance value of the fourth impedance can be set according to the actual situation. In addition, the specific type of the operational amplifier can also be selected according to actual requirements.

[0042] In some other embodiments, as Figure 5As shown, the above signal detection module includes a fifth impedance 307, a sixth impedance 308, a seventh impedance 309, an eighth impedance 310, a ninth impedance 311, a tenth impedance 312, an eleventh impedance 313, a twelfth impedance 314, a third amplifying device 315, a fourth amplifying device 316, and a fifth amplifying device 317. Among them, the first end of the fifth impedance 307 is the first end of the signal detection module. The second end of the fifth impedance 307, the first end of the third amplifying device 315, the first end of the seventh impedance 309, and the first end of the eighth impedance 310 are electrically connected. The first end of the sixth impedance 308 is electrically connected to the ground terminal. The second end of the sixth impedance 308 is electrically connected to the second end of the third amplifying device 315. The second end of the seventh impedance 309, the second end of the eighth impedance 310, the third end of the third amplifying device 315, and the first end of the ninth impedance 311 are electrically connected. The second end of the ninth impedance 311, the second end of the fourth amplifying device 316, the first end of the eleventh impedance 313, and the first end of the twelfth impedance 314 are electrically connected. The first end of the tenth impedance 312 is electrically connected to the ground terminal. The second end of the tenth impedance 312 is electrically connected to the first end of the fourth amplifying device 316. The second end of the eleventh impedance 313, the second end of the twelfth impedance 314, the third end of the fourth amplifying device 316, and the first end of the fifth amplifying device 317 are electrically connected. The second end of the fifth amplifying device 317 is used to input the signal threshold, and the third end of the fifth amplifying device 317 is used to output the fault signal. The setting of the signal detection module can further quickly respond to signal changes and waveform transformations.

[0043] Specifically, the above signal detection module realizes signal detection and post-processing through a differential circuit and a differential circuit. The seventh impedance, the eighth impedance, and the third amplifying device form a differential circuit, and the eleventh impedance, the twelfth impedance, and the fourth amplifying device form a differential circuit. By performing a differential operation on the input signal, the small changes in the input signal can be quickly converted into an output signal. Moreover, the differential circuit has a fast response to high-frequency signals and can capture the rapid changes of the signal. The differential comparison circuit structure is relatively simple, and by reasonably selecting the resistance and capacitance parameters, efficient signal processing can be achieved.

[0044] In some embodiments, such as Figure 5As shown, the above-mentioned fifth impedance 307, sixth impedance 308, seventh impedance 309, tenth impedance 312, and eleventh impedance 313 are resistors, the above-mentioned eighth impedance 310, ninth impedance 311, and twelfth impedance 314 are capacitors, the above-mentioned third amplifier device 315, fourth amplifier device 316, and fifth amplifier device 317 are operational amplifiers. The first ends of the third amplifier device 315, the fourth amplifier device 316, and the fifth amplifier device 317 are the non-inverting input terminals of the operational amplifier, the second ends of the third amplifier device 315, the fourth amplifier device 316, and the fifth amplifier device 317 are the inverting input terminals of the operational amplifier, and the third ends of the third amplifier device 315, the fourth amplifier device 316, and the fifth amplifier device 317 are the output terminals of the operational amplifier. The device selection of the above-mentioned fifth impedance, sixth impedance, seventh impedance, eighth impedance, ninth impedance, tenth impedance, eleventh impedance, twelfth impedance, third amplifier device, fourth amplifier device, and fifth amplifier device can further simplify the signal detection module.

[0045] Specifically, the resistance values of the above-mentioned fifth impedance, sixth impedance, seventh impedance, tenth impedance, and eleventh impedance can be set according to the actual situation, and the capacitance values of the above-mentioned eighth impedance, ninth impedance, and twelfth impedance can be set according to the actual situation. In addition, the specific type of the above-mentioned operational amplifier can also be selected according to actual requirements.

[0046] As Figure 6 shown, the above-mentioned control module 40 includes a switching device 401. The first end of the switching device 401 is the first end of the control module 40, the second end of the switching device 401 is the second end of the control module 40, and the third end of the switching device 401 is the third end of the control module 40. The above setting can further simplify the control module.

[0047] In some embodiments, as Figure 6 shown, the above-mentioned switching device 401 is a MOS transistor. The first end of the switching device 401 is the gate of the MOS transistor, the second end of the switching device 401 is the source of the MOS transistor, and the third end of the switching device 401 is the drain of the MOS transistor. The above setting can further simplify the control module.

[0048] Specifically, the connection method of the source and drain of the above-mentioned MOS transistor can be swapped.

[0049] The above-mentioned electrical signal is a current signal, and the first end of the above-mentioned signal detection module is electrically connected to the anode or cathode of the above-mentioned power semiconductor device. The above setting can further obtain an accurate current signal.

[0050] Specifically, when the electrical signal is a current signal and the first end of the signal detection module is electrically connected to the anode, the main purpose of this measurement is to measure the total current of the power semiconductor device. The anode current of the power semiconductor device mainly reflects the total current of the external characteristics. However, during the turn-off transient, it cannot reflect the current during the device turn-off transient (the turn-off transient anode current is the sum of the cathode current and the gate current). In practical applications, since the drive of the power semiconductor device is placed on the cathode side of the device, an additional current sensor can be set at the anode of the above-mentioned power semiconductor device to obtain the above-mentioned current signal. When the electrical signal is a current signal and the first end of the signal detection module is electrically connected to the cathode, since the drive of the power semiconductor device is placed on the cathode side of the device, the signal detection module can be directly integrated with the gate drive.

[0051] The above-mentioned electrical signal is a voltage signal, and the first end of the above-mentioned signal detection module is electrically connected to the anode of the above-mentioned power semiconductor device. The above setting can further obtain an accurate voltage signal.

[0052] In practical applications, some existing power semiconductor device drives have modules for measuring the anode and cathode voltages. Therefore, for this drive, the above-mentioned signal detection module can be directly improved on the existing drive.

[0053] The embodiment of the present application also provides a control method for a drive circuit of a power semiconductor device. The following introduces the control method for the drive circuit of the power semiconductor device provided by the embodiment of the present application. Figure 7 It is a schematic flowchart of the control method for the drive circuit of the power semiconductor device according to the embodiment of the present application. As Figure 7 shown, the method includes:

[0054] Step S701, the above-mentioned signal detection module detects the electrical signal of the above-mentioned power semiconductor device;

[0055] Step S702, determine whether the above-mentioned electrical signal is greater than the above-mentioned signal threshold;

[0056] Step S703, when the above-mentioned electrical signal is greater than the above-mentioned signal threshold, the above-mentioned signal detection module outputs a fault signal to the above-mentioned control module, and the control module outputs a turn-off signal to the above-mentioned maintenance module in response to the fault signal to turn off the above-mentioned maintenance module;

[0057] Step S704, when the above-mentioned electrical signal is less than or equal to the above-mentioned signal threshold, the above-mentioned maintenance module operates normally.

[0058] Specifically, when the power semiconductor device is conducting current normally, a gate current needs to be continuously injected through the gate to maintain the common-base forward gain inside the device, and this gate current is provided by the maintenance module. When the gate injection current is removed, the gain effect inside the device will rapidly decay. At this time, the device will enter the off state, and the current conduction inside the device will start to decrease. Based on this principle, by collecting the electrical signal of the semiconductor power device and judging whether the device has an overcurrent according to the magnitude relationship between this electrical signal and the signal threshold, when an overcurrent occurs, a fault signal is sent to the control module, and the control module sends a turn-off signal to the maintenance module. At this time, it enters the gain-removal stage, and the current of the power semiconductor device starts to decrease. When it decreases to the gate turn-off current, the process is repeated and a maintenance current is input to the gate.

[0059] Through this embodiment, a signal detection module and a control module are added to the existing drive circuit of the power semiconductor device. The electrical signal of the power semiconductor device is detected by the detection module, and whether an overcurrent phenomenon will occur is judged according to the magnitude relationship between this electrical signal and the signal threshold. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the turn-off of the maintenance module, thereby turning off the maintenance current, making the power semiconductor device enter the gain-removal stage, so as to reduce the current flowing through the device until it is below the maximum turn-off current, and finally realize the reliable turn-off and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of the power semiconductor device in the prior art.

[0060] An embodiment of the present invention provides an electronic system, including a power semiconductor device and any one of the above-mentioned drive circuits of the power semiconductor device, and the above-mentioned drive circuit of the power semiconductor device is used to drive the above-mentioned power semiconductor device.

[0061] In some embodiments, the above-mentioned power semiconductor device is one of IGBT, GTO, SGTO, ETO, Thyristor, GCT, IGCT, and hybrid power semiconductor devices.

[0062] Specifically, an IGBT is a composite power device that combines the advantages of the high input impedance of a MOSFET and the low on-state voltage drop of a BJT. It drives a PNP bipolar transistor by a MOSFET to form a path with a low on-state voltage drop. The IGBT has characteristics such as high voltage and high current withstand capabilities, fast switching speed, and low on-state voltage drop. A GTO is a special thyristor that is turned off by applying a negative pulse to the gate. The GTO has the advantages of high voltage and large current tolerance. An SGTO is an improved type of GTO with a symmetrical anode and cathode structure, capable of bidirectional conduction and turn-off, and it has a higher turn-off ability. Compared with the GTO, the SGTO has a faster turn-off speed. An ETO is an emitter turn-off thyristor that combines the high voltage withstand and high current capabilities of a thyristor and the control advantages of a MOS gate. The ETO has high voltage withstand and large current capabilities, and is easy to control with a relatively fast switching speed. A thyristor is a semi-controlled device that is turned on by gate triggering but cannot be actively turned off and can only be turned off naturally when the current drops to zero. The thyristor has the characteristics of high voltage and large current tolerance. A GCT is a gate-commutated thyristor that combines the high voltage withstand and high current capabilities of a thyristor and the advantages of gate control. The GCT has high voltage withstand and large current capabilities, and low on-state losses. An IGCT is a device that integrates a GTO chip with an antiparallel diode and a gate drive circuit. It combines the high voltage withstand and low on-state loss characteristics of a GTO and the control ability of a MOSFET. The IGCT has the characteristics of high voltage withstand, large current, and low on-state losses. The hybrid power semiconductor device includes the scenarios where two of the above-mentioned power semiconductor devices are applied in parallel.

[0063] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0064] 1). For the drive circuit of the power semiconductor device of the present application, a signal detection module and a control module are added to the existing drive circuit of the power semiconductor device. The detection module detects the electrical signal of the power semiconductor device, and based on the magnitude relationship between the electrical signal and the signal threshold, it determines whether an overcurrent phenomenon will occur. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the turn-off of the maintenance module, thereby turning off the holding current, reducing the overcurrent flowing through the device, and finally achieving the reliable turn-off and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of the power semiconductor device in the prior art.

[0065] 2), Control method for the drive circuit of the power semiconductor device of the present application. The drive circuit of the power semiconductor device adds a signal detection module and a control module to the existing drive circuit of the power semiconductor device. The electrical signal of the power semiconductor device is detected by the detection module, and based on the magnitude relationship between this electrical signal and the signal threshold, it is determined whether an overcurrent phenomenon will occur. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the shutdown of the maintenance module, thereby turning off the holding current, reducing the overcurrent flowing through the device, and ultimately achieving reliable shutdown and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of the power semiconductor device in the prior art.

[0066] 3), The electronic system of the present application includes a power semiconductor device and a drive circuit for the power semiconductor device. The drive circuit of the power semiconductor device adds a signal detection module and a control module to the existing drive circuit of the power semiconductor device. The electrical signal of the power semiconductor device is detected by the detection module, and based on the magnitude relationship between this electrical signal and the signal threshold, it is determined whether an overcurrent phenomenon will occur. When the electrical signal is greater than the signal threshold, it is considered that an overcurrent phenomenon has occurred, and a fault signal is output to the control module to further trigger the shutdown of the maintenance module, thereby turning off the holding current, reducing the overcurrent flowing through the device, and ultimately achieving reliable shutdown and overcurrent protection of the power semiconductor device, solving the problem of how to achieve overcurrent protection of the power semiconductor device in the prior art.

[0067] The above are only the preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included within the protection scope of the present application.

Claims

1. A driving circuit for a power semiconductor device, characterized in that: It includes a power supply module, a maintenance module, a signal detection module and a control module. The power semiconductor device includes a gate, a cathode and an anode. The two ends of the maintenance module are respectively used to electrically connect to the gate and the cathode. The first end of the signal detection module is electrically connected to the anode or the cathode. The second end of the signal detection module is electrically connected to the first end of the control module. The second end of the control module is electrically connected to the power supply module. The third end of the control module is electrically connected to the maintenance module. The signal detection module is used to detect the electrical signal of the power semiconductor device and output a fault signal to the control module when the electrical signal is greater than a signal threshold. The control module is used to respond to the fault signal and output a shutdown signal to the maintenance module. The electrical signal is a current signal or a voltage signal.

2. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The signal detection module includes a first impedance, a second impedance, a third impedance, a fourth impedance, a first amplifier device and a second amplifier device. The first end of the first impedance is the first end of the signal detection module, the second end of the first impedance, the first end of the first amplifier device, the first end of the third impedance and the first end of the fourth impedance are electrically connected, the first end of the second impedance is electrically connected to the ground end, the second end of the second impedance is electrically connected to the second end of the first amplifier device, the first end of the second amplifier device is used to input the signal threshold, the second end of the third impedance, the second end of the fourth impedance, the third end of the first amplifier device and the second end of the second amplifier device are electrically connected, and the third end of the second amplifier device is used to output the fault signal.

3. The driving circuit of the power semiconductor device according to claim 2, characterized in that: The first impedance, the second impedance and the third impedance are resistors, the fourth impedance is a capacitor, the first amplifying device and the second amplifying device are operational amplifiers, the first end of the first amplifying device and the first end of the second amplifying device are non-inverting input ends of the operational amplifier, the second end of the first amplifying device and the second end of the second amplifying device are inverting input ends of the operational amplifier, and the third end of the first amplifying device and the third end of the second amplifying device are output ends of the operational amplifier.

4. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The signal detection module includes a fifth impedance, a sixth impedance, a seventh impedance, an eighth impedance, a ninth impedance, a tenth impedance, an eleventh impedance, a twelfth impedance, a third amplifier, a fourth amplifier and a fifth amplifier. The first end of the fifth impedance is the first end of the signal detection module, the second end of the fifth impedance, the first end of the third amplifier, the first end of the seventh impedance and the first end of the eighth impedance are electrically connected, the first end of the sixth impedance is electrically connected to the ground, the second end of the sixth impedance is electrically connected to the second end of the third amplifier, the second end of the seventh impedance, the second end of the eighth impedance, the third amplifier The third end of the amplifying device and the first end of the ninth impedance are electrically connected, the second end of the ninth impedance, the second end of the fourth amplifying device, the first end of the eleventh impedance and the first end of the twelfth impedance are electrically connected, the first end of the tenth impedance is electrically connected to the ground terminal, the second end of the tenth impedance is electrically connected to the first end of the fourth amplifying device, the second end of the eleventh impedance, the second end of the twelfth impedance, the third end of the fourth amplifying device and the first end of the fifth amplifying device are electrically connected, the second end of the fifth amplifying device is used to input the signal threshold, and the third end of the fifth amplifying device is used to output the fault signal.

5. The driving circuit of the power semiconductor device according to claim 4, characterized in that: The fifth impedance, the sixth impedance, the seventh impedance, the tenth impedance and the eleventh impedance are resistors, the eighth impedance, the ninth impedance and the twelfth impedance are capacitors, the third amplifying device, the fourth amplifying device and the fifth amplifying device are operational amplifiers, the first end of the third amplifying device, the first end of the fourth amplifying device and the first end of the fifth amplifying device are non-inverting input ends of the operational amplifier, the second end of the third amplifying device, the second end of the fourth amplifying device and the second end of the fifth amplifying device are inverting input ends of the operational amplifier, and the third end of the third amplifying device, the third end of the fourth amplifying device and the third end of the fifth amplifying device are output ends of the operational amplifier.

6. The driving circuit of the power semiconductor device according to claim 1, characterized in that: The control module includes a switch device, a first end of the switch device is a first end of the control module, a second end of the switch device is a second end of the control module, and a third end of the switch device is a third end of the control module.

7. The driving circuit of the power semiconductor device according to claim 6, characterized in that: The switch device is a MOS tube, the first end of the switch device is the gate of the MOS tube, the second end of the switch device is the source of the MOS tube, and the third end of the switch device is the drain of the MOS tube.

8. A method for controlling a driving circuit of a power semiconductor device, characterized in that: The method applied to the driving circuit of the power semiconductor device according to any one of claims 1 to 7 comprises: The signal detection module detects the electrical signal of the power semiconductor device; Determine whether the electrical signal is greater than the signal threshold, the electrical signal being a current signal or a voltage signal; In the case where the electrical signal is greater than the signal threshold, the signal detection module outputs a fault signal to the control module, and the control module outputs a shut-off signal to the maintenance module in response to the fault signal to shut down the maintenance module; When the electrical signal is less than or equal to the signal threshold, the maintaining module operates normally.

9. An electronic system, characterized in that: A power semiconductor device and a driving circuit for the power semiconductor device according to any one of claims 1 to 7, wherein the driving circuit for the power semiconductor device is used to drive the power semiconductor device.

10. The electronic system according to claim 9, characterized in that: The power semiconductor device is one of IGBT, GTO, ETO, GCT and a hybrid power semiconductor device.

11. The electronic system according to claim 9, characterized in that: The power semiconductor device is an SGTO or an IGCT.

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