A chamfering device and method

Abstract

The present application relates to the field of wafer processing, and particularly to a chamfering device and method, including: a chamfering mechanism for chamfering a wafer; a cleaning mechanism for cleaning the wafer; a transfer mechanism disposed between the chamfering mechanism and the cleaning mechanism for transferring the wafer from the chamfering mechanism to the cleaning mechanism; and an infrared mechanism disposed above the cleaning mechanism for obtaining an imaging of the temperature distribution on the surface of the wafer in the cleaning mechanism to detect the cleaning cleanliness of the wafer. By providing the cleaning mechanism to clean the wafer, the technical effect of improving the cleaning cleanliness of the wafer is achieved.

Description

Technical Field

[0001] The present application relates to the field of wafer processing, and in particular to a chamfering device and method. Background Art

[0002] Wafer chamfering equipment is a key equipment in semiconductor manufacturing, which is used to accurately chamfer the edge of the wafer. The chamfering process is designed to remove burrs and damage on the edge of the wafer to improve the mechanical strength of the wafer and the yield rate of subsequent processing.

[0003] In the prior art, there are many debris on the surface of the wafer after chamfering, and the debris may scratch the wafer, so the wafer needs to be cleaned. However, the wafer is difficult to clean, thereby reducing the quality of the wafer.

[0004] Therefore, the technical problem of the prior art is that the chamfered wafer is difficult to clean. Summary of the invention

[0005] The present application provides a chamfering device and method, which achieves the technical effect of improving the cleanliness of the wafer by setting a cleaning mechanism to clean the wafer.

[0006] On the one hand, the present application provides a chamfering device, which adopts the following technical solution:

[0007] A chamfering device comprises: a chamfering mechanism, which is used to chamfer a wafer; a cleaning mechanism, which is used to clean the wafer, and the cleaning mechanism comprises: a shell, the interior of the shell has a cleaning chamber, and the wafer is located in the cleaning chamber for cleaning; a carrier, the carrier is arranged in the interior of the cleaning chamber, the carrier has a bearing surface, the bearing surface has an adsorption function, and the bearing surface is used to adsorb and carry the wafer; the carrier has a rotational freedom around an axis to drive the wafer to rotate; and a spray component, the spray component is arranged in the interior of the cleaning chamber, and the spray component is used to spray and clean the wafer; a transfer mechanism, the transfer mechanism is arranged between the chamfering mechanism and the cleaning mechanism, and the transfer mechanism is used to transfer the wafer from the chamfering mechanism to the cleaning mechanism; and an infrared mechanism, the infrared mechanism is arranged above the cleaning mechanism, and the infrared mechanism is used to obtain temperature distribution imaging of the wafer surface in the cleaning mechanism to detect the cleanliness of the wafer.

[0008] Preferably, the spraying assembly includes: a first spraying member disposed inside the cleaning chamber, above the bearing surface, and inclined downward for spraying and cleaning the upper surface of the wafer; a second spraying member disposed inside the cleaning chamber, below the bearing surface, and inclined upward for spraying and cleaning the lower surface of the wafer.

[0009] Preferably, the carrier includes: a carrier base disposed inside the cleaning chamber, having a rotational degree of freedom of rotating about an axis; and two sub-carriers connected to the carrier base, with bearing surfaces for adsorbing and carrying wafers provided at the tops of the two sub-carriers.

[0010] Preferably, the two sub-carriers are relatively independent and arranged in parallel, and are centrosymmetric about the rotation center of the carrier base.

[0011] Preferably, the sub-carrier is movably connected to the carrier base so that the sub-carrier has at least a first state and a second state: in the first state, the sub-carrier contacts and adsorbs the wafer; in the second state, the sub-carrier separates from the wafer, enabling the two sub-carriers to adsorb the wafer simultaneously or alternately.

[0012] Preferably, the sub-carrier is slidably connected to the carrier base in the vertical direction, and the carrier further includes a driving member connected between the sub-carrier and the carrier base for driving the sub-carrier to move in the vertical direction.

[0013] Preferably, an adsorption port is provided at the top side of the sub-carrier, and the adsorption port is communicated with the negative pressure path of the bearing surface; the carrier further includes: a blocking member connected to the sub-carrier and cooperating with the adsorption port of the adjacent sub-carrier, such that the blocking member can move up and down with the sub-carrier and has a first working position and a second working position: in the first working position, the sub-carrier is in the first state, and the blocking member covers the adsorption port of the adjacent sub-carrier to close the adsorption port of the adjacent sub-carrier; in the second working position, the sub-carrier is in the second state, and the blocking member disengages from the adsorption port of the adjacent sub-carrier to open the adsorption port of the adjacent sub-carrier.

[0014] Preferably, the blocking member includes: a connecting portion connected to the sub-carrier; and a covering portion connected to the connecting portion and used for cooperating with the adsorption port of the adjacent sub-carrier.

[0015] Preferably, both of the sub - carriers have contact surfaces, and the two contact surfaces are in contact with each other. An adsorption port is provided at the top of the contact surface, and the adsorption port is communicated with the negative - pressure path of the bearing surface. When the sub - carrier is in the first state, the contact surface blocks the adsorption port of the adjacent sub - carrier; when the sub - carrier is in the second state, the contact surface is separated from the adsorption port of the adjacent sub - carrier.

[0016] On the other hand, a chamfering method provided by the present application adopts the following technical solution:

[0017] A chamfering method is applied to the chamfering device described above, which chamfers the wafer through the chamfering device, cleans the wafer through the cleaning mechanism, and obtains the temperature - distribution imaging of the wafer surface through the infrared mechanism to detect the cleaning cleanliness of the wafer.

[0018] In summary, the present application includes at least one of the following beneficial technical effects:

[0019] The chamfering device proposed in the present application is equipped with a cleaning mechanism and an infrared mechanism. The cleaning mechanism can comprehensively clean the wafer, reduce the possibility of debris residue on the wafer surface, and improve the wafer cleanliness. After the cleaning is completed, the infrared mechanism can obtain the temperature imaging of the wafer surface, and based on the temperature - distribution imaging, the cleaning cleanliness of the wafer can be detected, realizing non - contact cleanliness detection, improving process reliability, and enhancing the cleaning cleanliness of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic diagram of the chamfering mechanism of the chamfering device described in the present application;

[0021] Figure 2 is a working schematic diagram of the chamfering mechanism of the chamfering device described in the present application;

[0022] Figure 3 is a schematic diagram of the cleaning mechanism of the chamfering device described in the present application;

[0023] Figure 4 is a schematic diagram of the carrier of the cleaning mechanism described in the present application;

[0024] Figure 5 is a first working schematic diagram of the carrier of the cleaning mechanism described in the present application;

[0025] Figure 6 is a second working schematic diagram of the carrier of the cleaning mechanism described in the present application;

[0026] Figure 7 is a schematic diagram of the blocking member of the cleaning mechanism described in the present application;

[0027] Figure 8 is a working schematic diagram of the blocking member of the cleaning mechanism described in the present application;

[0028] Figure 9 It is a schematic structural diagram of a blocking member of the cleaning mechanism described in this application;

[0029] Figure 10 It is another schematic diagram of a carrier of the cleaning mechanism described in this application;

[0030] Figure 11 It is a schematic working diagram of another carrier of the cleaning mechanism described in this application;

[0031] Figure 12 It is a schematic flowchart of the chamfering method described in this application.

[0032] Explanation of reference numerals: 100, chamfering mechanism; 110, grinding wheel; 200, cleaning mechanism; 210, housing; 211, cleaning chamber; 220, carrier; 221, bearing surface; 222, carrier seat; 223, sub-carrier; 2231, adsorption port; 2232, contact surface; 223A, first sub-carrier; 223B, second sub-carrier; 224, blocking member; 2241, connecting portion; 2242, covering portion; 230, spraying assembly; 231, first spraying member; 232, second spraying member; W, wafer. Detailed implementation manners

[0033] The serial numbers assigned to the components in this article, such as "first", "second", etc., are only used to distinguish the described objects and do not have any sequential or technical meanings. The "connection" and "coupling" mentioned in this application, unless otherwise specified, both include direct and indirect connection (coupling). In the description of this application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to this application.

[0034] In this application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "beneath" and "under" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0035] The present application provides a chamfering device and method. By setting up a cleaning mechanism 200 to clean the wafer W, the technical effect of improving the cleaning cleanliness of the wafer W is achieved.

[0036] To better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the specification drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0037] The chamfering device and chamfering method proposed by the present application aim to achieve efficient and precise chamfering and cleaning of the wafer W, and ensure the cleanliness of the wafer W during cleaning through infrared detection means. As Figure 1-11 shown, the chamfering device includes a chamfering mechanism 100, a transfer mechanism, a cleaning mechanism 200, and an infrared mechanism. The chamfering mechanism 100 is used to chamfer the wafer W so that the edge of the wafer W meets the process requirements; the transfer mechanism is used to transfer the wafer W; the cleaning mechanism 200 is used to spray and clean the wafer W to remove debris on the wafer W during the chamfering process; the infrared mechanism is used to detect the cleaned wafer W to make the wafer W meet the cleanliness requirements.

[0038] The chamfering mechanism 100 is used to chamfer the wafer W so that the edge of the wafer W meets the process requirements. As Figure 1 、 2 shown, the chamfering mechanism 100 generally includes grinding wheels 110 distributed vertically. The wafer W is arranged on the turntable, and a close and uniform contact is generated between the edge of the wafer W and the grinding wheels 110; the grinding wheels 110 grind the edge of the wafer W at a certain speed and pressure. By adjusting the material, shape, and grinding parameters of the grinding wheels 110, the accuracy and consistency of the chamfering effect are ensured. The chamfering mechanism 100 will not be elaborated here.

[0039] The transfer mechanism (not shown) is used to transfer the wafer W. The transfer mechanism is arranged between the chamfering mechanism 100 and the cleaning mechanism 200 and is used to transfer the chamfered wafer W from the chamfering mechanism 100 to the cleaning mechanism 200. The transfer mechanism can adopt structures such as a robotic arm and a conveyor belt, and its specific design can be adjusted according to actual process requirements.

[0040] The infrared mechanism (not shown) is used to detect the cleaning degree of the wafer W. The infrared mechanism is arranged above the cleaning mechanism 200 and can detect the wafer W located on the carrier 220. The temperature distribution of the wafer W is obtained through infrared to judge the cleanliness of the wafer W; in one embodiment, the infrared mechanism can be an infrared imaging device.

[0041] As Figure 3As shown, the cleaning mechanism 200 is used to spray and clean the wafer W to remove the debris during the chamfering process of the wafer W. The cleaning mechanism 200 is used to clean the chamfered wafer W. The cleaning mechanism 200 includes a housing 210, a carrier 220, and a spray assembly 230;

[0042] As Figure 3 shown, a cleaning chamber 211 is provided inside the housing 210, and the wafer W is cleaned in this chamber. The housing 210 is made of a corrosion-resistant material to ensure the chemical stability of the cleaning liquid. The carrier 220 is disposed inside the cleaning chamber 211. The carrier 220 has a bearing surface 221 with adsorption holes thereon. A negative pressure path is provided inside the carrier 220 to enable the bearing surface 221 to have an adsorption function. The bearing surface 221 is used to adsorb and carry the wafer W; the carrier 220 has a rotational degree of freedom of self-rotation about an axis to drive the wafer W to rotate. The spray assembly 230 is disposed inside the cleaning chamber 211. The spray assembly 230 is used to spray and clean the wafer W. The wafer W is vacuum-adsorbed on the bearing surface 221 of the carrier 220. The carrier 220 drives the wafer W to rotate, and the spray assembly 230 can spray and clean the wafer W in all directions.

[0043] Further, to improve the cleaning effect of the spray assembly 230 on the wafer W, as Figure 3 shown, the spray assembly 230 includes a first spray member 231 and a second spray member 232. Both the first spray member 231 and the second spray member 232 are disposed in the cleaning chamber 211 of the housing 210. The first spray member 231 and the second spray member 232 cooperate to jointly spray and clean the wafer W. It should be noted that the bearing surface 221 of the carrier 220 is disposed at the top of the carrier 220, and the bearing surface 221 is set as a flat surface. The first spray member 231 is disposed above the bearing surface 221 and is inclined downward, so that the first spray member 231 can spray and clean the upper surface of the wafer W obliquely from top to bottom; the second spray member 232 is disposed below the bearing surface 221 and is inclined upward, so that the second spray member 232 can spray and clean the lower surface of the wafer W obliquely from bottom to top; in one embodiment, the first spray member 231 and the second spray member 232 are fixedly connected to the inner wall of the housing 210, and the first spray member 231 and the second spray member 232 are nozzles, and the cleaning liquid is supplied through an external connection.

[0044] As Figure 4-6As shown, the carrier 220 includes a carrier base 222 and sub - carriers 223. The sub - carriers 223 are connected to the carrier base 222. The carrier base 222 drives the sub - carriers 223 to rotate, thereby driving the wafer W adsorbed on the sub - carriers 223 to rotate, completing cleaning and spin - drying. Specifically, the carrier base 222 is disposed inside the cleaning chamber 211, and the carrier base 222 has a rotational degree of freedom of self - rotation about an axis; there are two sub - carriers 223. The tops of the two sub - carriers 223 both have a bearing surface 221. The bearing surface 221 has adsorption holes. A negative pressure path is provided inside the sub - carriers 223 so that the bearing surface 221 has an adsorption function, enabling the bearing surfaces 221 of the two sub - carriers 223 to jointly adsorb the wafer W or alternately adsorb the wafer W. In this way, the wafer W is fixed on the sub - carriers 223 by the adsorption effect and is driven to rotate by the rotation of the carrier base 222; wherein, the two sub - carriers 223 are relatively independent and arranged in parallel, and the two sub - carriers 223 are centrosymmetric about the rotation center of the carrier base 222; by respectively adsorbing the wafer W with the two sub - carriers 223, the adsorption force stability of the wafer W is improved.

[0045] Furthermore, as Figure 5 、 6 shown, the sub - carrier 223 is movably connected to the carrier base 222 so that the sub - carrier 223 has at least a first state and a second state: in the first state, the sub - carrier 223 contacts and adsorbs the wafer W; in the second state, the sub - carrier 223 is separated from the wafer W, enabling the two sub - carriers 223 to simultaneously or alternately adsorb the wafer W.

[0046] Specifically, the carrier 220 further includes a driving member (not shown), and the driving member is used to drive the sub - carrier 223 to move; as Figure 5 、 6 shown, the sub - carrier 223 is movably connected to the carrier base 222 and has a degree of freedom of movement in the vertical direction; by driving the sub - carrier 223 to move in the vertical direction with the driving member, the sub - carrier 223 can have at least a first state and a second state: in the first state, the sub - carrier 223 contacts and adsorbs the wafer W; in the second state, the sub - carrier 223 is separated from the wafer W. More specifically, when the sub - carrier 223 is in the first state, under the negative pressure inside the sub - carrier 223, the bearing surface 221 at the top of the sub - carrier 223 has an adsorption effect on the wafer W, and the lower surface of the wafer W and the bearing surface 221 of the sub - carrier 223 are in close contact, that is, cleaning and spin - drying cannot be achieved in this area; by driving the sub - carrier 223 to descend with the driving member, the sub - carrier 223 is switched to the second state. In the second state, due to the descent of the sub - carrier 223, the bearing surface 221 at the top of the sub - carrier 223 is separated from the lower surface of the wafer W, forming a gap between the lower surface of the wafer W and the bearing surface 221, that is, the lower surface of the wafer W and the bearing surface 221 do not contact, enabling cleaning and spin - drying in this area.

[0047] Further, as shown in Figure 5 and 6 , the sub-carrier 223 is slidably connected to the carrier base 222 in the vertical direction. In one embodiment, the sub-carrier 223 is sleeved on the carrier base 222 in the vertical direction, so that the negative pressure path in the sub-carrier 223 can communicate with the external negative pressure source through the carrier base 222, and the sub-carrier 223 and the carrier base 222 can be sealed by a sealing ring. Further still, the driving member is used to drive the sub-carrier 223 to lift and lower, so that the sub-carrier 223 can be switched between the first state and the second state. There are two corresponding driving members, and the driving members are connected between the sub-carrier 223 and the carrier base 222; in one embodiment, the driving member can be a cylinder; it can be understood that in the first state and / or the second state, the driving member also plays a role in supporting the sub-carrier 223 to maintain the current state of the position of the sub-carrier 223.

[0048] During the cleaning process, as shown in Figure 5 and 6 , by alternately adsorbing the wafer W by the two sub-carriers 223, the second spraying member 232 can comprehensively clean the lower surface of the wafer W, reduce the covered area of the adsorption of the wafer W, and improve the cleaning effect of the wafer W; during the drying process, by alternately adsorbing the wafer W by the two sub-carriers 223, the residual of the spraying liquid in the gap between the sub-carrier 223 and the wafer W can be prevented, and the formation of water stains on the wafer W can be prevented, further improving the cleaning effect of the wafer W. It is worth noting that when the two sub-carriers 223 alternately adsorb, the sub-carrier 223 can descend to separate from the adsorption acting on the wafer W. Preferably, the sub-carrier 223 can be independently vacuum-controlled, and when it needs to descend, the adsorption function of the current sub-carrier 223 can be cancelled.

[0049] Further, as shown in Figure 7-11 , an adsorption port 2231 is provided on the top side of each sub-carrier 223, and the adsorption port 2231 communicates with the adsorption path inside the sub-carrier 223 (the bearing surface 221); as shown in Figure 7 and 8 , the carrier 220 further includes a blocking member 224. Specifically, each sub-carrier 223 is provided with a blocking member 224, and the blocking member 224 is connected to the sub-carrier 223 and is used to cooperate with the adsorption port 2231 of the adjacent sub-carrier 223. Under the driving action of the driving member, the blocking member 224 can lift and lower with the sub-carrier 223, so that the blocking member 224 forms a first working position and a second working position: in the first working position, the sub-carrier 223 is in the first state, and the blocking member 224 closes the adsorption port 2231 on the adjacent sub-carrier 223; in the second working position, the sub-carrier 223 is in the second state, and the blocking member 224 opens the adsorption port 2231 on the adjacent sub-carrier 223.

[0050] In other words, as Figure 7 , 8 shown, the adsorption port 2231 provided on the top side of each sub-carrier 223 is communicated with the adsorption path inside the sub-carrier 223, and the liquid is absorbed from the wafer W or the bearing surface 221 through the adsorption port 2231; meanwhile, the blocking member 224 cooperates with the adsorption port 2231 of the adjacent sub-carrier 223. As the sub-carrier 223 moves up and down, the adsorption port 2231 can be flexibly closed or opened, so that the blocking member 224 forms two different working states: the first working position and the second working position; when the blocking member 224 is in the first working position (the sub-carrier 223 adsorbs the wafer W), the blocking member 224 closes the adsorption port 2231 of the adjacent sub-carrier 223; when the blocking member 224 is in the second working position (the sub-carrier 223 is separated from the wafer W), the blocking member 224 opens the adsorption port 2231 of the adjacent sub-carrier 223.

[0051] Specifically, in the cleaning or spin-drying stage, first, both sub-carriers 223 are in the first state, that is, both sub-carriers 223 adsorb the lower surface of the wafer W. At this time, the blocking member 224 is in the first working position, and the blocking member 224 covers the adsorption port 2231 of the other sub-carrier 223, that is, the adsorption ports 2231 on both sub-carriers 223 are in the blocked state at this time;

[0052] As Figure 7 , 8 shown, define the two sub-carriers 223 as the first sub-carrier 223A and the second sub-carrier 223B. Lower the first sub-carrier 223A, that is, switch to the second state. The first sub-carrier 223A is separated from the wafer W, then the first sub-carrier 223A drives the blocking member 224 connected thereto to descend together, so that the blocking member 224 is separated from the adsorption port 2231 of the second sub-carrier 223B and opens. Since the adsorption port 2231 is communicated with the negative pressure path inside the second sub-carrier 223B, when the adsorption port 2231 of the second sub-carrier 223B is opened, the liquid in the area where the first sub-carrier 223A is separated from the wafer W can be absorbed, and at the same time, the liquid can be absorbed from the bearing surface 221 of the first sub-carrier 223A; after the area where the first sub-carrier 223A is separated from the wafer W is cleaned or spin-dried, raise the first sub-carrier 223A to reset and lower the second sub-carrier 223B, and repeat the above actions.

[0053] It should be noted that when the sub-carrier 223 descends, its own adsorption port 2231 does not open, which can be achieved by adjusting the shape, area or size of the blocking member 224 on the adjacent sub-carrier 223; and because the blocking member 224 on the sub-carrier 223 is small, it does not affect the absorption of liquid by the opened adsorption port 2231.

[0054] Furthermore, as Figure 9As shown, the blocking component includes a connecting portion 2241 and a covering portion 2242. The connecting portion 2241 is connected to the sub-carrier 223, and the covering portion 2242 is used to cooperate with the adsorption port 2231 of the adjacent sub-carrier 223. When the sub-carrier 223 is in the first state, the covering portion 2242 closes the adsorption port 2231 on the adjacent sub-carrier 223; when the sub-carrier 223 is in the second state, the covering portion 2242 opens the adsorption port 2231 on the adjacent sub-carrier 223.

[0055] It can be understood that during the spin-drying process, when the sub-carrier 223 adsorbs the wafer W, the liquid is thrown to the edge during rotation, but the area where the sub-carrier 223 contacts the wafer W hinders the liquid flow due to the adsorption force, resulting in residue. Even when the sub-carrier 223 is in the second state (descending), the liquid moves outward due to the centrifugal force, and it is difficult for the adsorption effect of the carrier 220 to capture it in the vertical direction. In this embodiment, by alternately lifting and lowering the sub-carrier 223, a gap can be formed to make the liquid easier to be thrown out. At the same time, the adsorption port 2231 of the adjacent carrier 220 is opened, and the residual liquid in the gap between the descending sub-carrier 223 and the wafer W can be suctioned. Further, even when the sub-carrier 223 descends, the lower surface area of the wafer W that detaches from the sub-carrier 223 is located in the center of the wafer W, and the centrifugal force of the liquid is small. The centrifugal force of the liquid in the central area is not enough to completely throw it out during rotation, resulting in residue. Therefore, the adsorption effect of the adsorption port 2231 is required to remove it; the adsorption port 2231 plays an active suction role here to make up for the deficiency of the centrifugal force. There is also liquid on the bearing surface 221 of the descending sub-carrier 223 (in the second state). Due to the small centrifugal force, the adsorption port 2231 is needed to absorb it; when the sub-carrier 223 descends, the originally contacting area now forms a gap, and the residual liquid cannot be discharged only by the centrifugal force, and negative pressure suction is required to remove it.

[0056] In other embodiments, the structures of the two sub-carriers 223 can also be: as Figure 10 , 11 shown, both of the two sub-carriers 223 have contact surfaces 2232, the two contact surfaces 2232 are in contact with each other, an adsorption port 2231 is arranged at the top of the contact surface 2232, and the adsorption port 2231 is communicated with the negative pressure path of the bearing surface 221; so that when the sub-carrier 223 is in the first state, the contact surface 2232 blocks the adsorption port 2231 of the adjacent sub-carrier 223; when the sub-carrier 223 is in the second state, the contact surface 2232 is separated from the adsorption port 2231 of the adjacent sub-carrier 223.

[0057] Specifically, as Figure 10 , 11As shown, the sides of the two sub-carriers 223 are in contact with each other. The mutually contacting sides are defined as the contact surface 2232. An adsorption port 2231 is provided at the top of the contact surface 2232. The positions of the two adsorption ports 2231 are staggered, so that the contact surfaces 2232 of the two sub-carriers 223 can block the adsorption ports 2231. When the sub-carrier 223 is in the first state, the contact surface 2232 and the adsorption port 2231 are in close contact, that is, the adsorption port 2231 is blocked by the contact surface 2232 of the adjacent sub-carrier 223. When a certain sub-carrier 223 descends, the contact surface 2232 separates, exposing the adsorption port 2231 to open, and liquid is sucked through negative pressure.

[0058] This application also proposes a chamfering method, as Figure 12 shown, including:

[0059] S1: Chamfering processing: Fix the wafer W on the chamfering mechanism 100 and complete chamfering according to preset parameters;

[0060] S2: Wafer W transfer: Transfer the wafer W to the carrier 220 of the cleaning mechanism 200 through the transfer mechanism;

[0061] S3: Double-sided spray cleaning: Start the first spray member 231 and the second spray member 232 to clean the upper and lower surfaces of the wafer W respectively;

[0062] Specifically, send the wafer W into the chamfering mechanism 100 for chamfering; the chamfering mechanism 100 chamfers the wafer W according to preset process parameters to ensure the uniformity and accuracy of chamfering;

[0063] After chamfering is completed, transfer the wafer W into the cleaning mechanism 200 for cleaning through the transfer mechanism; during the cleaning process, the carrier seat 222 drives the wafer W to rotate, and the spray assembly 230 sprays and cleans the upper and lower surfaces of the wafer W; at the same time, by adjusting the state (the first state or the second state) of the sub-carrier 223, alternating cleaning of the wafer W during the cleaning process can be realized, improving the cleaning efficiency;

[0064] Furthermore, it also includes S4: Alternating drying process:

[0065] Drive the first sub-carrier 223A to descend, so that the adsorption port 2231 on the second sub-carrier 223B is opened, start rotary drying, and the opened adsorption port 2231 sucks the liquid between the first sub-carrier 223A and the wafer W;

[0066] Reset the first sub-carrier 223A, drive the second sub-carrier 223B to descend, and repeat drying and suction;

[0067] Repeat several times.

[0068] S5: After the cleaning is completed, obtain the temperature distribution imaging of the surface of the wafer W through the infrared mechanism; the infrared mechanism monitors and analyzes the temperature of the surface of the wafer W in real time to determine the cleanliness of the wafer W cleaning.

[0069] Although the preferred embodiments of the present application have been described, those skilled in the art can make additional changes and modifications to these embodiments once they learn the basic creative concept. Therefore, the appended claims are intended to be construed to include the preferred embodiments as well as all changes and modifications that fall within the scope of the present application.

[0070] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalent technologies, the present application is also intended to include these modifications and variations.

Claims

1. A chamfering device, characterized in that: include: A chamfering mechanism (100), wherein the chamfering mechanism (100) is used to chamfer a wafer (W); A cleaning mechanism (200), the cleaning mechanism (200) being used to clean a wafer (W), the cleaning mechanism (200) comprising: A housing (210), wherein a cleaning chamber (211) is provided inside the housing (210), and a wafer (W) is located in the cleaning chamber (211) for cleaning; A carrier (220), the carrier (220) being arranged inside the cleaning chamber (211), the carrier (220) having a carrying surface (221), the carrying surface (221) having an adsorption function, the carrying surface (221) being used to adsorb and carry a wafer (W); the carrier (220) having a rotational freedom of self-rotation around an axis to drive the wafer (W) to rotate; and A spray assembly (230), the spray assembly (230) being arranged inside the cleaning chamber (211), and the spray assembly (230) being used for spray cleaning of a wafer (W); a transfer mechanism, the transfer mechanism being arranged between the chamfering mechanism (100) and the cleaning mechanism (200), the transfer mechanism being used to transfer a wafer (W) from the chamfering mechanism (100) to the cleaning mechanism (200); and An infrared mechanism, the infrared mechanism being arranged above the cleaning mechanism (200), the infrared mechanism being used to obtain temperature distribution imaging of the surface of the wafer (W) in the cleaning mechanism (200) to detect the cleanliness of the wafer (W); The carrier (220) comprises: A carrier seat (222), the carrier seat (222) being arranged inside the cleaning chamber (211), the carrier seat (222) having a rotational freedom of rotation around an axis; A sub-carrier (223), wherein two sub-carriers (223) are provided, the two sub-carriers (223) are connected to the carrier seat (222), and the tops of the two sub-carriers (223) are both provided with a carrying surface (221) for adsorbing and carrying a wafer (W); The sub-carrier (223) is slidably connected to the carrier seat (222) along a vertical direction; A suction port (2231) is provided on the top side of each sub-carrier (223), and the suction port (2231) is connected to the suction path inside the sub-carrier (223). By alternately lifting and lowering the sub-carriers (223), the suction ports (2231) of adjacent sub-carriers (223) are opened, and residual liquid in the gap between the descending sub-carrier (223) and the wafer (W) can be sucked.

2. A chamfering device according to claim 1, characterized in that: The spray assembly (230) comprises: a first spraying member (231), the first spraying member (231) being arranged inside the cleaning chamber (211), the first spraying member (231) being located above the carrying surface (221), and the first spraying member (231) being arranged tilted downward, and the first spraying member (231) being used for spray cleaning the upper surface of a wafer (W); A second spray member (232), the second spray member (232) is arranged inside the cleaning chamber (211), the second spray member (232) is located below the supporting surface (221), and the second spray member (232) is arranged to be inclined upward, and the second spray member (232) is used for spraying and cleaning the lower surface of the wafer (W).

3. A chamfering device according to claim 1, characterized in that: The two sub-carriers (223) are relatively independent and arranged in parallel, and the two sub-carriers (223) are centrally symmetrical about the rotation center of the carrier seat (222).

4. A chamfering device according to claim 1, characterized in that: The sub-carrier (223) is movably connected to the carrier seat (222) so that the sub-carrier (223) has at least a first state and a second state: in the first state, the sub-carrier (223) contacts and adsorbs the wafer (W); in the second state, the sub-carrier (223) is separated from the wafer (W), so that the two sub-carriers (223) can adsorb the wafer (W) simultaneously or alternately.

5. A chamfering device according to claim 4, characterized in that: The carrier (220) further comprises a driving member, wherein the driving member is connected between the sub-carrier (223) and the carrier seat (222), and the driving member is used to drive the sub-carrier (223) to move in a vertical direction.

6. A chamfering device according to claim 5, characterized in that: The carrier (220) further includes: A blocking member (224), the blocking member (224) being connected to the sub-carrier (223) and cooperating with a suction port (2231) of an adjacent sub-carrier (223), so that the blocking member (224) can be raised and lowered along with the sub-carrier (223) and a first working position and a second working position are formed: at the first working position, the sub-carrier (223) is in a first state, the blocking member (224) covers the suction port (2231) on the adjacent sub-carrier (223), so that the suction port (2231) on the adjacent sub-carrier (223) is closed; at the second working position, the sub-carrier (223) is in a second state, the blocking member (224) is detached from the suction port (2231) on the adjacent sub-carrier (223), so that the suction port (2231) on the adjacent sub-carrier (223) is opened.

7. A chamfering device according to claim 6, characterized in that: The blocking member (224) comprises: A connecting portion (2241), the connecting portion (2241) being connected to the sub-carrier (223); A covering portion (2242), the covering portion (2242) being connected to the connecting portion (2241), and the covering portion (2242) being used to cooperate with the adsorption port (2231) of the adjacent sub-carrier (223).

8. The chamfering device according to claim 5, characterized in that: The side surfaces of the two sub-carriers (223) are in contact with each other, and the side surfaces in contact with each other are defined as contact surfaces (2232); when the sub-carrier (223) is in a first state, the contact surfaces (2232) block the adsorption openings (2231) of the adjacent sub-carriers (223); when the sub-carrier (223) is in a second state, the contact surfaces (2232) are detached from the adsorption openings (2231) of the adjacent sub-carriers (223).

9. A chamfering method, characterized in that: Applicable to the chamfering device as claimed in any one of claims 1 to 8, Passing a wafer (W) through a chamfering device to perform chamfering; Allowing the wafer (W) to be cleaned by a cleaning mechanism (200); The wafer (W) is passed through an infrared mechanism to obtain temperature distribution imaging on the surface of the wafer (W) to detect the cleaning cleanliness of the wafer (W).

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