High-certainty preparation method of high-index single-crystal metal foil

Abstract

The invention relates to a controllable preparation technology of a high-index single crystal, in particular to a high-certainty preparation method of a high-index single crystal metal foil, which is suitable for preparing high-index single crystal foils of metals such as Cu, Au and Ni. The method comprises the following steps: firstly, forming a texture of a low-index crystal face in a metal foil, and constructing a forward dislocation energy difference between the texture and a high-index crystal face; secondly, a rapid heating method is adopted for heating, dislocation energy difference in the metal foil is reserved at high temperature to overcome grain growth resistance, and high-index grains grow abnormally under the action of thermodynamic driving force to form single crystals. Due to the fact that the driving force of the dislocation energy difference is large, the method can achieve abnormal growth of high-index crystal grains in different types of metal foils, the certainty of the obtained high-index single crystal reaches 100%, the speed can reach 20 mm / min, and the method has the advantages of being high in universality, high in certainty, multiple in high-index crystal face variety and high in efficiency.

Description

Technical Field

[0001] The present invention relates to a controllable preparation technology of a high-index single crystal, in particular to a highly deterministic preparation method of a high-index single crystal metal foil, which is suitable for preparing high-index single crystal foils of metals such as Cu, Au, and Ni. Background Art

[0002] Due to its special surface atomic arrangement and step orientation, high index has a wide range of applications in catalysis, electricity, heat and epitaxial preparation of two-dimensional materials. Compared with low-index crystal planes, high-index crystal plane single crystal foils are thermodynamically unstable. Using surface energy difference as the driving force can only prepare thermodynamically stable low-index single crystals. Therefore, it is necessary to reverse the energy between high-index grains and low-index grains so that the high-index growth is a thermodynamically stable process. Surface oxidation and strain energy assistance can promote the preparation of high-index single crystals to a certain extent, but due to the low degree of energy reversal in the above processes, high-index single crystals can only be prepared with a certain probability, without high certainty. Due to the small driving force, the preparation speed of high-index single crystals is low. In addition, the types of metals applicable are also relatively limited, and some precious metals cannot be prepared into single crystals. Therefore, it is urgent to develop a method for preparing high-index single crystal metal foils with high universality, high certainty, a wide variety of high-index crystal planes and high efficiency. Summary of the invention

[0003] The purpose of the present invention is to provide a simple and universal method for preparing a high-index single crystal metal foil. The method first forms a texture in the metal foil and constructs a positive dislocation energy difference between the texture and the high-index grains, and then heats the texture by a rapid heating method, retaining the internal dislocation energy difference of the metal foil at a high temperature to overcome the resistance of grain growth, so that the high-index grains grow abnormally under the action of thermodynamic driving force to form single crystals. Since the driving force for grain growth is large, it can ensure that the grains grow at a faster rate in the future. In addition, the large driving force ensures the high certainty of high-index growth and is universal for a variety of metal foils.

[0004] The technical solution of the present invention is:

[0005] A highly deterministic preparation method for a high-index single crystal metal foil comprises the following steps: firstly, forming a texture of a low-index crystal plane in the metal foil and constructing a positive dislocation energy difference between the low-index crystal plane and the high-index crystal plane; secondly, heating is performed by a rapid heating method to retain the internal dislocation energy difference of the metal foil at a high temperature to overcome the resistance to grain growth, so that the high-index grains grow abnormally under the action of thermodynamic driving force to form single crystals.

[0006] The high-determinacy preparation method of the high-index single crystal metal foil has a texture comprising one or a combination of two or more of the following: (100) texture, (111) texture, and (110) texture, and the small-angle grain boundaries in the texture are dislocation accumulation areas.

[0007] The highly deterministic preparation method of the high-index single crystal metal foil, the metal foil includes but is not limited to Cu, Au, Ni, Ag, Pt, Pd or Al foil.

[0008] In the highly deterministic preparation method of the high-index single crystal metal foil, the process of introducing dislocation energy difference is to perform a deformation treatment on the metal foil, and the deformation treatment includes but is not limited to: stretching, forging or rolling.

[0009] The highly deterministic preparation method of the high-index single crystal metal foil generally has a heating rate greater than 200°C / min, and the rapid heating method includes but is not limited to one of the following heating methods: (1) rapidly pushing the metal foil from a low temperature environment into a high temperature zone; (2) direct resistance heating; (3) infrared induction heating.

[0010] The highly deterministic preparation method of the high-index single crystal metal foil has a typical preparation process as follows:

[0011] 1) The first stage: cleaning the metal foil to remove organic matter and various impurities on the metal surface;

[0012] 2) The second stage: the metal foil is deformed by 2% to 4%;

[0013] 3) The third stage: the deformed metal foil is placed outside the high temperature zone, and is quickly pushed into the high temperature zone in a protective atmosphere to rapidly heat the metal foil, and then heated for 1 to 5 minutes to obtain a high-index single crystal metal foil with a size of centimeters or above.

[0014] In the high-determinacy preparation method of the high-index single-crystal metal foil, the protective atmosphere is a hydrogen-argon mixed gas, the argon flow rate is 400-600sccm, and the hydrogen flow rate is 60-80sccm.

[0015] The highly deterministic preparation method of the high-index single crystal metal foil can deterministically prepare the single crystal metal foil with high-index crystal planes, and the crystal plane index has diversity.

[0016] In the highly deterministic preparation method of the high-index single crystal metal foil, in step 2), for the copper foil with a small dislocation energy difference inside the metal, pre-annealing is performed before deformation treatment, the pre-annealing temperature is 1000°C, and the pre-annealing time is 1 to 10 minutes to promote the strengthening of the (100) texture inside the metal foil.

[0017] In the high-determinacy preparation method of the high-index single crystal metal foil, in step 3), the temperature range of the high temperature zone is 1000-1020°C.

[0018] The design concept of the present invention is:

[0019] The present invention utilizes the characteristic that dislocations tend to accumulate at low-angle grain boundaries of low-index textures, so that a positive dislocation energy difference is formed between dislocations and growing high-index grains to increase their formation energy, thereby making the high-index crystal planes in the metal foil have relatively higher thermodynamic stability. This process can have the following two advantages: (1) In the rapid heating stage, the overall dislocation distribution inside the metal foil is relatively uniform, but there are local fluctuations in dislocation density. In some fluctuation areas (locations with large dislocation energy differences), abnormal growth of grains occurs. Since the distribution of high-index crystal planes inside the metal foil is much larger than that of low-index crystal planes ((111) and (110)), the high-index crystal planes have a higher probability of abnormal growth. (2) In areas with uniform dislocation density, (100) grains with lower surface energy swallow up surrounding high-index grains with higher surface energy, greatly reducing the number of abnormally grown high-index crystal planes. In the subsequent constant temperature annealing stage, a constant dislocation energy difference is formed between the abnormally grown high-index crystal planes and the low-index (100) crystal planes, promoting the continuous and rapid growth of the high-index crystal planes.

[0020] The advantages and beneficial effects of the present invention are:

[0021] 1. The present invention provides a method for preparing a single crystal by heating a polycrystalline metal foil at a high temperature to achieve abnormal growth of high-index crystal planes. The method adopts a simple deformation treatment to increase the dislocation density, or directly heats the metal foil with a suitable dislocation density quickly, thereby achieving abnormal growth of high-index grains with high certainty, fast growth rate and good universality.

[0022] 2. The driving force of the dislocation energy difference of the present invention is much greater than the resistance encountered by grain boundary migration, and can reduce the resistance of the thermal etching groove at the grain boundary to a certain extent, further increasing the net driving force.

[0023] 3. Due to the large net driving force, the present invention can achieve abnormal growth of high-index grains in different types of metal foils by heating at a relatively low temperature, thereby improving the efficiency of preparing high-index single crystals, and achieving 100% certainty of obtaining high-index single crystals at a speed of up to 20 mm / minute. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 The schematic diagram of the metal foil stretching device is shown in FIG. 11 is the metal foil to be stretched; 12 is the fixing clamp; and 13 is the suspension beam.

[0025] Figure 2 The schematic diagram of the metal foil annealing device is shown in FIG. 21 , gas inlet; 22 , reaction furnace; 23 , metal foil; 24 , flange; 25 , gas outlet; and 26 , quartz tube.

[0026] Figure 3The preparation method and characterization of high index metal foil. In the figure, (a) the thermodynamic mechanism of growing high index crystal plane, the horizontal axis High index, (100) texture represents the high index crystal plane and (100) texture, and the vertical axis Free energy represents the free energy, E s(h k l) represents the surface energy of the high-index crystal plane (hkl), E s represents the surface energy of the (100) grain, ΔE d Represents the dislocation energy difference between the high-index crystal plane (hkl) and the (100) crystal plane; (b) Schematic diagram of the growth process, Fast heating represents rapid heating, Short annealing represents rapid annealing, (hkl) represents any high-index crystal plane, and GND Density represents the geometrically required dislocation density.

[0027] Figure 4 Quasi-in-situ characterization of the preparation of high-index single crystal copper foil. In the figure, (a) a photo of Cu(113) single crystal foil after mild oxidation in air at 180°C, with the polycrystalline region on the right. (b) a representative electron backscatter diffraction (EBSD) IPZ image (top) and the corresponding KAM image (bottom) of Cu(113) single crystal foil, indicating that the prepared single crystal has high consistency. (c) XRD 2θ scanning spectrum of Cu(113) single crystal copper foil, where the horizontal axis 2θ is the diffraction angle (°) and the vertical axis XRD Intensity is the diffraction intensity; the inset is Scanning spectrum, horizontal axis represents the angle (°) from the surface normal direction, and the ordinate XRDIntensity is the diffraction intensity. (d) Atomic resolution transmission electron microscopy (HRTEM) image of Cu(113) foil, and the inset is the fast Fourier transform pattern of the HRTEM image. (e) Typical EBSD IPF image with different high-index crystal planes (013), (105), (304), (233), (235), and (335). (f) IPZ statistics of the prepared single crystal copper foil, showing the diversity of high-index planes. (g) The grain growth rate and annealing temperature of this work (single crystal copper with high-index planes) are compared with the reported results of single crystals prepared by AGG (abnormal grain growth). The abscissa T represents the annealing temperature (℃), the ordinate Average GrowthRate represents the grain growth rate (mm / min), High index represents high index, and Low index represents low index.

[0028] Figure 5Characterization of the structural uniformity of high-index single-crystalline copper foil. (a) Photograph of a decimeter-sized single-crystalline Cu(113) foil obtained by rapid heating followed by annealing for 5 minutes. (b) and (c) are the EBSDIPZ map (b) and (001) PF map (c) at the corresponding regions marked in (a), respectively.

[0029] Figure 6 Characterization of high-index Ni single crystals. In the figure, (a) Photograph of Ni (157) single crystal foil; (b) Representative EBSD IPZ map (top) and corresponding KAM map (bottom) of Ni (157) single crystal, indicating high consistency of the prepared single crystal; (c) Typical EBSD IPF map with different high-index crystal planes (013), (115), (025), (407), (345); (d) IPZ statistics of the prepared single crystal Ni foil, showing the diversity of high-index planes.

[0030] Figure 7 Characterization of high-index Au single crystals. In the figure, (e) Photograph of Au(012) single crystal foil; (f) Representative EBSD IPZ map (top) and corresponding KAM map (bottom) of Au(012) single crystal, indicating high consistency of the prepared single crystal; (g) Typical EBSD IPF map with different high-index crystal planes (214), (114), (212), (112), (223). (h) IPZ statistics of the prepared single crystal Au foil, showing the diversity of high-index planes. DETAILED DESCRIPTION

[0031] In the specific implementation process, the preparation method and characterization process of the high index metal foil of the present invention are as follows ( Figure 3 ): Use metal foil (such as customized copper foil, ordinary commercial copper foil, Ni foil or Au foil, etc.) to perform simple stretching to inject driving force (dislocation energy), and use rapid heating to preserve the internal dislocation energy difference of the metal foil, so that the growth of high-index grains driven by dislocation energy and the growth of low-index grains driven by surface energy difference are synchronized and parallel, consuming most of the high-index grains and promoting the abnormal growth of single high-index grains. And because dislocations tend to accumulate at small-angle grain boundaries of textures such as (100), the enhancement of low-index textures is conducive to the formation of a stable dislocation energy difference between high-index textures with low dislocation energy and low-index textures with high dislocation energy, providing a constant driving force for the continuous and rapid growth of high-index grains.

[0032] The present invention is further described in detail below through examples and drawings.

[0033] Example 1

[0034] First, a commercial copper foil Cu containing a high dislocation density and a strong (100) texture was d / t23 cut into regular shapes of 4×10 cm and ultrasonically cleaned in acetone for 5 minutes, then rinsed repeatedly with anhydrous ethanol and deionized water for more than 3 times, the copper foil was quickly fished out and blown dry with high-purity nitrogen for later use. Figure 2 As shown, a quartz tube 26 is provided in a horizontal reaction furnace 22 (furnace tube inner diameter 50 mm, reaction zone length 150 mm), and a metal foil 23 (copper foil) is placed in the lower temperature area of ​​the inner cavity of the quartz tube 26 to isolate the external atmosphere. A gas inlet 21 and a gas outlet 25 are provided at both ends of the quartz tube 26, and the two ends of the quartz tube 26 are sealed and connected to the gas inlet 21 and the gas outlet 25 by flanges 24 to ensure airtightness.

[0035] The specific preparation method of high index single crystal copper foil is as follows:

[0036] (1) Before annealing, flush with 500 sccm Ar for 10 minutes to remove the air inside the quartz tube, and then adjust the carrier gas to 500 sccm Ar and 70 sccm H 2 The annealing temperature is 1020℃ and the dislocation energy difference inside the copper foil is preserved. d / t 23 is quickly pushed into the high temperature zone of the reactor and annealed for 5 minutes to obtain a high index single crystal copper foil with a length of about 10 cm.

[0037] (2) After annealing, the copper foil is quickly removed from the hot zone to cool, and then placed on a 180°C hot plate for 2 minutes for slight oxidation to preliminarily observe the morphology of the prepared single crystal.

[0038] (3) The prepared high-index single crystal copper foil was cut into specified shapes and subjected to EBSD and other crystal orientation tests. The characterization results showed that the prepared high-index single crystal had a uniform surface, consistent crystal orientation over a large area, and a variety of crystal planes. More than 40 high-index crystal planes were obtained, such as Figure 4 and Figure 5 shown.

[0039] In this embodiment, ~100% high-index single crystals are obtained with certainty, and the high-index single crystal preparation speed can reach 20 mm / min.

[0040] In the following Examples 2 and 3, other commercial copper foils with low dislocation density are classified into strong (100) texture copper foils and weak (100) texture copper foils.

[0041] Example 2

[0042] First, for the strong (100) textured copper foil (Cu t ), cut it into a regular shape of 1.5×3 cm; then, Figure 1 As shown, the metal foil 11 (Cu tThe foil is clamped by a fixing clamp 12, and the cantilever beam 13 is gradually moved by a stepping motor to t The foil is stretched with a stretching ratio of 2 to 3%.

[0043] The stretched commercial copper foil was ultrasonically cleaned in acetone for 5 minutes, and then rinsed repeatedly with anhydrous ethanol and deionized water for more than 3 times. The copper foil was quickly fished out and blown dry with high-purity nitrogen for later use. Figure 2 As shown, a quartz tube 26 is provided in a horizontal reaction furnace 22 (furnace tube inner diameter 50 mm, reaction zone length 150 mm), and a metal foil 23 (copper foil) is placed in the lower temperature area of ​​the inner cavity of the quartz tube 26 to isolate the external atmosphere. A gas inlet 21 and a gas outlet 25 are provided at both ends of the quartz tube 26, and the two ends of the quartz tube 26 are sealed and connected to the gas inlet 21 and the gas outlet 25 by flanges 24 to ensure airtightness.

[0044] The specific preparation method of high index single crystal copper foil is as follows:

[0045] (1) Before annealing, flush with 500 sccm Ar for 10 minutes to remove the air inside the quartz tube, and then adjust the carrier gas to 500 sccm Ar and 70 sccm H 2 The annealing temperature is 1020℃ and the dislocation energy difference inside the copper foil is preserved. t Quickly push it into the high temperature zone of the reactor and anneal for 1 minute to obtain a high-index single crystal copper foil with a length of about 1.5 cm.

[0046] (2) After annealing, the copper foil is quickly removed from the hot zone to cool, and then placed on a 180°C hot plate for 2 minutes for slight oxidation to preliminarily observe the morphology of the prepared single crystal.

[0047] (3) The prepared high-index single crystal copper foil was cut into specified shapes and subjected to EBSD and other crystal orientation tests. The characterization results showed that the surface of the prepared high-index single crystal was uniform.

[0048] In this embodiment, ~100% high-index single crystals are obtained with certainty, and the high-index single crystal preparation speed can reach 15 mm / min.

[0049] Example 3

[0050] First, for weak (100) texture copper foil (Cu n ), cut it into a regular shape of 1.5×3 cm; then, Figure 1 As shown, the copper foil is placed in a reaction furnace for pre-annealing at a temperature of 1000°C for 1 minute to promote the strengthening of the (100) texture inside the copper foil. nThe foil is clamped by a fixing clamp 12, and the cantilever beam 13 is gradually moved by a stepping motor to n The foil is stretched with a stretching ratio of 2 to 3%.

[0051] The stretched commercial copper foil was ultrasonically cleaned in acetone for 5 minutes, then rinsed repeatedly with anhydrous ethanol and deionized water for more than 3 times, and the copper foil was quickly fished out and blown dry with high-purity nitrogen for later use. Figure 2 As shown, a quartz tube 26 is provided in a horizontal reaction furnace 22 (furnace tube inner diameter 50 mm, reaction zone length 150 mm), and a metal foil 23 (copper foil) is placed in the lower temperature area of ​​the inner cavity of the quartz tube 26 to isolate the external atmosphere. A gas inlet 21 and a gas outlet 25 are provided at both ends of the quartz tube 26, and the two ends of the quartz tube 26 are sealed and connected to the gas inlet 21 and the gas outlet 25 by flanges 24 to ensure airtightness.

[0052] The specific preparation method of high index single crystal copper foil is as follows:

[0053] (1) Before annealing, flush with 500 sccm Ar for 10 minutes to remove the air inside the quartz tube, and then adjust the carrier gas to 500 sccm Ar and 70 sccm H 2 The annealing temperature is 1020℃ and the dislocation energy difference inside the copper foil is preserved. n Quickly push it into the high temperature zone of the reactor and anneal for 2 minutes to obtain a high-index single crystal copper foil with a length of about 1 cm.

[0054] (2) After annealing, the copper foil is quickly removed from the hot zone to cool, and then placed on a 180°C hot plate for 2 minutes for slight oxidation to preliminarily observe the morphology of the prepared single crystal.

[0055] (3) The prepared high-index single crystal copper foil was cut into specified shapes and subjected to EBSD and other crystal orientation tests. The characterization results showed that the surface of the prepared high-index single crystal was uniform.

[0056] In this embodiment, ~100% high-index single crystals are obtained with certainty, and the high-index single crystal preparation speed can reach 5 mm / min.

[0057] Example 4

[0058] For other metal foils with a certain dislocation density inside, take Ni foil (thickness of 100 μm) as an example, cut it into a regular shape of 2×4 cm, clean the Ni foil in acetone for 5 minutes by ultrasonic, then rinse it repeatedly with anhydrous ethanol and deionized water for more than 3 times, quickly remove the Ni foil and blow it dry with high-purity nitrogen for later use. Figure 2As shown, a quartz tube 26 is provided in a horizontal reaction furnace 22 (furnace tube inner diameter 50 mm, reaction zone length 150 mm), and a metal foil 23 (Ni foil) is placed in the lower temperature area of ​​the inner cavity of the quartz tube 26 to isolate the external atmosphere. A gas inlet 21 and a gas outlet 25 are provided at both ends of the quartz tube 26, and the two ends of the quartz tube 26 are sealed and connected to the gas inlet 21 and the gas outlet 25 by flanges 24 to ensure airtightness.

[0059] The method for rapid preparation of high-index single crystal Ni foil with high selectivity is as follows:

[0060] (1) Before annealing, flush with 500 sccm Ar for 10 minutes to remove the air inside the quartz tube, and then adjust the carrier gas to 500 sccm Ar and 70 sccm H 2 The annealing temperature is 1020°C and lasts for 10 minutes. In order to preserve the dislocation energy difference inside the Ni foil, the Ni foil is quickly pushed into the high temperature zone of the reactor and annealed for 1 minute to obtain a high-index single crystal Ni foil with a length of about 1.1 cm.

[0061] (2) The prepared high-index single crystal Ni foil was cut into specified shapes and subjected to EBSD and other crystal orientation tests. The characterization results showed that the prepared high-index single crystal had a uniform surface and a variety of crystal planes, reaching 27 types, such as Figure 6 shown.

[0062] In this embodiment, ~100% high-index single crystals are obtained with certainty, and the high-index single crystal preparation speed can reach 11 mm / min.

[0063] Example 5

[0064] For other types of commercial metal foils, taking Au foil (thickness of 50 μm) as an example, it is cut into a regular shape of 2×4 cm, and then placed in a reaction furnace for pre-annealing, the pre-annealing temperature is 1000°C, the pre-annealing time is 10 minutes, to promote the strengthening of the (100) texture inside the Au foil. The Au foil to be stretched 11 after pre-annealing is clamped by a fixed clamp 12, and the cantilever beam 13 is gradually moved by a stepping motor to stretch the Au foil, and the stretching rate is 3-4%.

[0065] The Au foil was ultrasonically cleaned in acetone for 5 minutes, and then rinsed repeatedly with anhydrous ethanol and deionized water for more than 3 times. The Au foil was quickly removed and blown dry with high-purity nitrogen for later use. Figure 2As shown, a quartz tube 26 is provided in a horizontal reaction furnace 22 (furnace tube inner diameter 50 mm, reaction zone length 150 mm), and a metal foil 23 (Au foil) is placed in the lower temperature area of ​​the inner cavity of the quartz tube 26 to isolate the external atmosphere. A gas inlet 21 and a gas outlet 25 are provided at both ends of the quartz tube 26, and the two ends of the quartz tube 26 are sealed and connected to the gas inlet 21 and the gas outlet 25 by flanges 24 to ensure airtightness.

[0066] The specific preparation method of high index single crystal Au foil is as follows:

[0067] (1) Before annealing, flush with 500 sccm Ar for 10 minutes to remove the air inside the quartz tube, and then adjust the carrier gas to 500 sccm Ar and 70 sccm H 2 The annealing temperature is 1020°C and lasts for 10 minutes. In order to preserve the dislocation energy difference inside the Au foil, the Au foil is quickly pushed into the high temperature zone of the reactor and annealed for 1 minute to obtain high-index single crystal grains with a length of about 1.5 cm.

[0068] (2) The prepared high-index single crystal Au foil was cut into specified shapes and subjected to EBSD and other crystal orientation tests. The characterization results showed that the prepared high-index single crystal had a uniform surface and a variety of crystal planes, reaching 21 types, such as Figure 7 shown.

[0069] In this embodiment, ~100% high-index single crystals are obtained with certainty, and the high-index single crystal preparation speed can reach 15 mm / min.

[0070] The results of the embodiments show that the method of the present invention is suitable for the efficient and deterministic preparation of a variety of high-index single-crystal metal foils. At the same time, the crystal face index is diverse, and it has the characteristics of high universality, high determinism, a wide variety of high-index crystal faces and high efficiency.

Claims

1. A highly deterministic preparation method for a high-index single crystal metal foil, characterized in that: Firstly, a texture of low-index crystal planes is formed in the metal foil and a positive dislocation energy difference between the texture and high-index crystal planes is constructed; Secondly, by using a rapid heating method, the internal dislocation energy difference of the metal foil is retained at high temperature to overcome the resistance of grain growth, so that the high-index grains grow abnormally under the action of thermodynamic driving force to form single crystals.

2. The high-determinacy preparation method of high-index single crystal metal foil according to claim 1, characterized in that: The texture includes one or a combination of two or more of the (100) texture, the (111) texture, and the (110) texture. The small-angle grain boundary in the texture is a dislocation accumulation area.

3. The high-determinacy preparation method of a high-index single crystal metal foil according to claim 1, characterized in that: Metal foils include, but are not limited to, Cu, Au, Ni, Ag, Pt, Pd or Al foils.

4. The high-determinacy preparation method of a high-index single crystal metal foil according to claim 1, characterized in that: The process of introducing dislocation energy difference is to perform deformation treatment on the metal foil, and the deformation treatment includes but is not limited to: stretching, forging or rolling.

5. The high-determinacy preparation method of high-index single crystal metal foil according to claim 1, characterized in that: The heating rate is usually greater than 200°C / min. Rapid heating methods include but are not limited to one of the following heating methods: (1) rapidly pushing the metal foil from a low temperature environment into a high temperature zone; (2) direct resistance heating; (3) infrared induction heating.

6. The highly deterministic method for preparing a high-index single crystal metal foil according to any one of claims 1 to 5, characterized in that: The typical preparation process is as follows: 1) The first stage: cleaning the metal foil to remove organic matter and various impurities on the metal surface; 2) The second stage: the metal foil is deformed by 2% to 4%; 3) The third stage: the deformed metal foil is placed outside the high temperature zone, and is quickly pushed into the high temperature zone in a protective atmosphere to rapidly heat the metal foil, and then heated for 1 to 5 minutes to obtain a high-index single crystal metal foil with a size of centimeters or above.

7. The high-determinacy preparation method of high-index single crystal metal foil according to claim 6, characterized in that: The protective atmosphere is a hydrogen-argon mixed gas, the argon flow rate is 400-600sccm, and the hydrogen flow rate is 60-80sccm.

8. The high-determinacy preparation method of a high-index single crystal metal foil according to claim 6, characterized in that: This method can deterministically prepare single crystal metal foils with high-index crystal faces, while the crystal face indices are diverse.

9. The high-determinacy preparation method of a high-index single crystal metal foil according to claim 6, characterized in that: In step 2), for the copper foil with a small dislocation energy difference inside the metal, pre-annealing is performed before deformation treatment, the pre-annealing temperature is 1000° C., and the pre-annealing time is 1 to 10 minutes to promote the strengthening of the (100) texture inside the metal foil.

10. The high-determinacy preparation method of a high-index single crystal metal foil according to claim 6, characterized in that: In step 3), the temperature range of the high temperature zone is 1000-1020°C.

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