Multilayer electronic component

Abstract

The present disclosure provides a multilayer electronic component including: a body including a capacitance forming portion including a dielectric layer and internal electrodes alternately disposed with the dielectric layer in a first direction, and a cover portion covering the dielectric layer, the covering part is arranged on two surfaces of the capacitance forming part in the first direction; and an external electrode disposed on the main body. The covering portion includes a barium titanate (BaTiO3)-based material as a main component and a piezoelectric ceramic material other than the barium titanate (BaTiO3)-based material as an auxiliary component.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2023-0144773 filed on October 26, 2023 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] The present disclosure relates to a multi-layer electronic assembly. Background Art

[0003] Multilayer ceramic capacitors (MLCC, a type of multilayer electronic component) are chip capacitors that are mounted on printed circuit boards of various types of electronic products such as image display devices (including liquid crystal displays (LCDs) and plasma display panels (PDPs)), computers, smartphones, and mobile phones, and are used to charge or discharge the same.

[0004] Multilayer ceramic capacitors are used as components of various electronic devices because they have a small size, ensure high capacitance, and are easy to mount. With the miniaturization and high output power of various electronic devices such as computers and mobile devices, the demand for miniaturization and high capacitance of multilayer ceramic capacitors has also increased.

[0005] More specifically, as the demand for information technology (IT) electronic devices with smaller sizes and higher integration increases, the conditions related to acoustic noise in such devices have become more stringent. Therefore, there is a need for products with improved acoustic noise characteristics.

[0006] When the MLCC according to the related art is continuously exposed to acoustic noise generated when a high frequency is applied and operates, the MLCC may have a negative impact on adjacent circuits or devices, or may make electrical signal transmission unstable. In addition, the continuous acoustic noise generation may deform the MLCC itself, so that the MLCC may have reduced reliability and durability, which may cause noise problems for users of devices including the MLCC. Summary of the invention

[0007] An aspect of the present disclosure is to eliminate acoustic noise applied to a multi-layer electronic assembly.

[0008] Another aspect of the present disclosure is to eliminate acoustic noise applied to a cover.

[0009] Another aspect of the present disclosure is to improve the reliability and extend the life of a multi-layer electronic assembly.

[0010] However, aspects of the present disclosure are not limited to those set forth herein and will be more readily understood in the course of describing specific example embodiments of the present disclosure.

[0011] A multilayer electronic component may include: a main body including a capacitance forming part and a covering part, the capacitance forming part including a dielectric layer and inner electrodes alternately arranged with the dielectric layer in a first direction, the covering part being arranged on both surfaces of the capacitance forming part in the first direction; and an outer electrode arranged on the main body. The covering part may include a barium titanate (BaTiO3)-based material as a main component and a piezoelectric ceramic material other than the barium titanate (BaTiO3)-based material as a subcomponent.

[0012] A multilayer electronic component may include: a capacitor forming portion having dielectric layers and internal electrodes alternately arranged with the dielectric layers; and a covering portion disposed on the capacitor forming portion and including a plurality of first dielectric grains including a barium titanate-based material and a plurality of second dielectric grains including a piezoelectric ceramic material other than the barium titanate-based material.

[0013] According to example embodiments of the present disclosure, acoustic noise of a multi-layer electronic component may be eliminated.

[0014] According to the exemplary embodiment of the present disclosure, acoustic noise of the cover may be eliminated.

[0015] According to example embodiments of the present disclosure, a multilayer electronic component may have improved reliability and extended lifespan.

[0016] However, various beneficial advantages and effects of the present disclosure are not limited to those set forth herein and will be more easily understood in the course of describing specific example embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and other aspects, features and advantages of the present disclosure will be more clearly understood through the following detailed description in conjunction with the accompanying drawings, in which: Figure 1 is a schematic perspective view of a multilayer electronic component according to an example embodiment of the inventive concept; Figure 2 It is along Figure 1 A schematic cross-sectional view taken along line II' of ; Figure 3 It is along Figure 1 A schematic cross-sectional view taken along line II-II'; and Figure 4 Shows Figure 2 Schematic microstructure of an enlarged view of area P. DETAILED DESCRIPTION

[0018] Hereinafter, example embodiments of the present disclosure are described with reference to the accompanying drawings. However, the present disclosure may be illustrated in many different forms and should not be construed as being limited to the specific example embodiments set forth herein. In addition, example embodiments of the present disclosure may be provided to more fully describe the present disclosure to those skilled in the art, and therefore, for clarity of description, the shapes and sizes of elements in the accompanying drawings may be exaggerated, and elements represented by the same reference numerals in the accompanying drawings may be the same elements.

[0019] In order to clearly illustrate the present disclosure, parts irrelevant to the description are omitted, and in order to clearly indicate layers and regions, sizes (e.g., thickness) are exaggerated, and similar parts having the same functions in the same scope are represented by similar reference numerals throughout the specification. Throughout the specification, unless otherwise specifically stated, when an element is referred to as "comprising" or "including", it means that the element may also include other elements, rather than excluding other elements.

[0020] In the drawings, a first direction may be defined as a stacking direction or a thickness (T) direction, a second direction may be defined as a length (L) direction, and a third direction may be defined as a width (W) direction.

[0021] Multilayer electronic components Figure 1 is a schematic perspective view of a multilayer electronic component according to an example embodiment of the inventive concept.

[0022] Figure 2 It is along Figure 1 Schematic cross-sectional view taken along line II'.

[0023] Figure 3 It is along Figure 1 Schematic cross-sectional view taken along line II-II'.

[0024] Figure 4 Shows Figure 2 Schematic microstructure of an enlarged view of area P.

[0025] In the following, reference will be made to Figures 1 to 4 A multilayer electronic component according to an exemplary embodiment of the present disclosure is described in detail. A multilayer ceramic capacitor will be described as an example of a multilayer electronic component. However, the present disclosure may also be applied to various other electronic products using a dielectric composition, such as an inductor, a piezoelectric element, a varistor, a thermistor, and the like.

[0026] The multilayer electronic component 100 according to an example embodiment of the present disclosure may include a body 110 including a capacitance forming part Ac including a dielectric layer 111 and internal electrodes 121 and 122 alternately disposed with the dielectric layer 111 in a first direction, and covering parts 112 and 113 disposed on both surfaces of the capacitance forming part Ac in the first direction, and external electrodes 131 and 132 disposed on the body 110. The covering parts 112 and 113 may include a barium titanate (BaTiO3)-based material as a main component and a piezoelectric ceramic material other than the barium titanate (BaTiO3)-based material as a subsidiary component.

[0027] In the body 110 , dielectric layers 111 and internal electrodes 121 and 122 may be alternately stacked.

[0028] More specifically, the internal electrodes 121 and 122 may include a first internal electrode 121 and a second internal electrode 122, and the capacitor forming part Ac forms a capacitor by including the first internal electrodes 121 and the second internal electrodes 122 alternately arranged opposite to each other and having the dielectric layer 111 interposed between the first internal electrode 121 and the second internal electrode 122.

[0029] The specific shape of the body 110 is not particularly limited. However, as shown, the body 110 may have a hexahedral shape or a shape similar to a hexahedral shape. During the sintering process, the ceramic powder particles included in the body 110 may shrink, so that the body 110 may not have a hexahedral shape having perfect straight lines, but may generally have a hexahedral shape.

[0030] The main body 110 may have: a first surface 1 and a second surface 2, which are opposite to each other in a first direction, a third surface 3 and a fourth surface 4, which are connected to the first surface 1 and the second surface 2, and the third surface 3 and the fourth surface 4 are opposite to each other in the second direction; and a fifth surface 5 and a sixth surface 6, which are connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 4, and the fifth surface 5 and the sixth surface 6 are opposite to each other in a third direction.

[0031] The plurality of dielectric layers 111 may be in a sintered state, and adjacent dielectric layers 111 may be integrated with each other such that it is difficult to identify a boundary therebetween without using a scanning electron microscope (SEM).

[0032] There is no limitation on the raw material used to form the dielectric layer 111, as long as sufficient capacitance can be obtained using it. Generally, perovskite (ABO3)-based materials can be used. For example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials can be used. The barium titanate-based materials may include BaTiO3-based ceramic powder particles. Examples of BaTiO3-based ceramic powder particles may include (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O3 (0 < y < 1).

[0033] In addition, for the purposes of the present disclosure, the raw material for forming the dielectric layer 111 can be obtained by adding various ceramic additives, organic solvents, binders, dispersants, etc. to powder particles such as barium titanate (BaTiO3)-based ceramic powder particles.

[0034] However, the dielectric layer 111 included in the capacitance forming portion Ac may not include a piezoelectric ceramic material other than the barium titanate (BaTiO3)-based material described below, or may not include dielectric grains containing a piezoelectric ceramic material formed by sintering a piezoelectric ceramic material. Hereinafter, for ease of description, the "piezoelectric ceramic material other than the barium titanate (BaTiO3)-based material" will be simply referred to as the "piezoelectric ceramic material".

[0035] Here, the capacitance forming portion Ac not including the piezoelectric ceramic material may mean that the piezoelectric ceramic material is not added to the dielectric slurry of the ceramic sheet that will become the dielectric layer 111. During the sintering process, the piezoelectric ceramic material may diffuse from the dielectric sheet that becomes the covering portions 112 and 113 toward the central portion of the capacitance forming portion Ac, such that the piezoelectric ceramic material may be detected in a region of the capacitance forming portion Ac near the interface between the capacitance forming portion Ac and the covering portions 112 and 113, which may be due to the diffusion of the piezoelectric ceramic material from the dielectric sheet for the covering portion.

[0036] Here, the region of the capacitance forming portion Ac located near the interface between the capacitance forming portion Ac and the covering portions 112 and 113 may refer to, for example, a region of the capacitance forming portion Ac within 10µm from the interface between the capacitance forming portion Ac and the covering portions 112 and 113 toward the central portion of the capacitance forming portion Ac. That is, the piezoelectric ceramic material may be included in the region of the capacitance forming portion Ac within 10µm from the interface between the capacitance forming portion Ac and each of the covering portions 112 and 113 toward the central portion of the capacitance forming portion Ac, and the atomic percentage (at%) of the piezoelectric ceramic material in the region may be 5at% or less, or the number of dielectric grains including the piezoelectric ceramic material in the region may have a percentage of 5% or less.

[0037] However, a region of the capacitor forming portion Ac other than a region located near the interface between the capacitor forming portion Ac and the covering portions 112 and 113 (for example, a region of the capacitor forming portion Ac located 10 µm away from the interface between the capacitor forming portion Ac and the covering portions 112 and 113 toward the central portion of the capacitor forming portion Ac) may not include piezoelectric ceramic material, or may not include dielectric grains containing piezoelectric ceramic material.

[0038] Furthermore, when the multilayer electronic component 100 includes the side edge portions 114 and 115 , the above description may also be similarly applied.

[0039] That is, the piezoelectric ceramic material may be detected in a region of the capacitance forming portion Ac near the interface between the capacitance forming portion Ac and the side edge portions 114 and 115 , possibly due to diffusion of the piezoelectric ceramic material from the dielectric sheet for the side edge portions.

[0040] The region of the capacitance forming portion Ac located near the interface between the capacitance forming portion Ac and the side edge portions 114 and 115 may refer to, for example, a region of the capacitance forming portion Ac within 10µm from the interface between the capacitance forming portion Ac and the side edge portions 114 and 115 toward the central portion of the capacitance forming portion Ac. That is, the piezoelectric ceramic material may be included in the region of the capacitance forming portion Ac within 10µm from the interface between the capacitance forming portion Ac and each of the side edge portions 114 and 115 toward the central portion of the capacitance forming portion Ac, and the atomic percentage (at%) of the piezoelectric ceramic material in the region may be 5at% or less, or the number of dielectric grains including the piezoelectric ceramic material in the region may have a percentage of 5% or less.

[0041] However, an area of ​​the capacitor forming portion Ac other than an area located near the interface between the capacitor forming portion Ac and the side edge portions 114 and 115 (for example, an area of ​​the capacitor forming portion Ac located 10 µm away from the interface between the capacitor forming portion Ac and the side edge portions 114 and 115 toward the center portion of the capacitor forming portion Ac) may not include piezoelectric ceramic material, or may not include dielectric grains containing piezoelectric ceramic material.

[0042] The thickness td of the dielectric layer 111 is not particularly limited.

[0043] In order to realize high capacitance of the multilayer electronic component, the thickness of the dielectric layer 111 may be 3.0 µm or less. In order to more easily realize high capacitance and miniaturization of the multilayer electronic component, the thickness of the dielectric layer 111 may be 1.0 µm or less, preferably 0.6 µm or less, and more preferably 0.4 µm or less.

[0044] Here, the thickness td of the dielectric layer 111 may refer to a thickness td of the dielectric layer 111 disposed between the internal electrodes 121 and 122 .

[0045] The thickness td of the dielectric layer 111 may refer to a size of the dielectric layer 111 in the first direction. In addition, the thickness td of the dielectric layer 111 may refer to an average thickness of the dielectric layer 111 and may refer to an average size of the dielectric layer 111 in the first direction.

[0046] The average size of the dielectric layer 111 in the first direction can be measured by scanning the cross section of the main body 110 in the first direction and the second direction with an SEM at a magnification of, for example, 10,000 to obtain an image. More specifically, the average size of one dielectric layer 111 in the first direction may refer to: in the scanned image, the average value of the size in the first direction measured at thirty points of one dielectric layer 111 that are equally spaced from each other in the second direction. Thirty points equally spaced may be specified in the capacitor forming portion Ac. In addition, when such an average value measurement is performed on ten dielectric layers 111, the average size of the dielectric layer 111 in the first direction may be more generalized.

[0047] The internal electrodes 121 and 122 may be alternately disposed with the dielectric layers 111 .

[0048] The inner electrodes 121 and 122 may include a first inner electrode 121 and a second inner electrode 122, and the first inner electrode 121 and the second inner electrode 122 may be alternately arranged opposite to each other, and the dielectric layer 111 is interposed between the first inner electrode 121 and the second inner electrode 122, and the first inner electrode 121 and the second inner electrode 122 may be exposed to the third surface 3 and the fourth surface 4 of the body 110, respectively.

[0049] More specifically, the first inner electrode 121 may be spaced apart from the fourth surface 4 and may be exposed to the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and may be exposed to the fourth surface 4. The first outer electrode 131 may be disposed on the third surface 3 of the body 110 and connected to the first inner electrode 121, and the second outer electrode 132 may be disposed on the fourth surface 4 of the body 110 and connected to the second inner electrode 122.

[0050] That is, the first internal electrode 121 is not connected to the second external electrode 132 but is connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131 but is connected to the second external electrode 132. In this case, the first internal electrode 121 and the second internal electrode 122 may be electrically isolated from each other by the dielectric layer 111 interposed therebetween.

[0051] The body 110 may be formed by alternately stacking ceramic green sheets having the first internal electrode patterns printed thereon and ceramic green sheets having the second internal electrode patterns printed thereon to form a laminated body and then performing sintering on the laminated body.

[0052] The material for forming the internal electrodes 121 and 122 is not particularly limited, and a material having excellent conductivity may be used. For example, the internal electrodes 121 and 122 may include at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0053] In addition, the internal electrodes 121 and 122 may be formed by printing a conductive paste for internal electrodes including at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. A screen printing method or a gravure printing method may be used as a method of printing the conductive paste for the internal electrodes, but the present disclosure is not limited thereto.

[0054] The thickness te of the internal electrodes 121 and 122 is not limited.

[0055] To achieve high capacitance of the multilayer electronic component, the thickness of the internal electrodes 121 and 122 may be 1.0 μm or less. To more easily achieve high capacitance and miniaturization of the multilayer electronic component, the thickness of the internal electrodes 121 and 122 may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0056] The thickness te of the internal electrodes 121 and 122 may refer to a size of the internal electrodes 121 and 122 in the first direction. In addition, the thickness te of the internal electrodes 121 and 122 may refer to an average thickness of the internal electrodes 121 and 122, and may refer to an average size of the internal electrodes 121 and 122 in the first direction. In addition, the thickness te of the internal electrodes 121 and 122 may refer to an average size of at least one of the internal electrodes 121 and 122 in the first direction.

[0057] The average size of at least one of the internal electrodes 121 and 122 in the first direction may be measured by scanning the cross section of the body 110 in the first direction and the second direction with an SEM at a magnification of 10000 to obtain an image. More specifically, the average size of one internal electrode in the first direction may refer to: in the scanned image, the average value of the size in the first direction measured at thirty points of one internal electrode that are equally spaced from each other in the second direction. Thirty points equally spaced may be specified in the capacitor forming portion Ac. In addition, when such average value measurement is performed on ten internal electrodes, the average size of the internal electrode in the first direction may be more generalized.

[0058] The body 110 may include cover portions 112 and 113 disposed on both surfaces of the capacitance forming portion Ac in the first direction.

[0059] More specifically, the covering portions 112 and 113 include a first covering portion 112 provided on one surface of the capacitance forming portion Ac in the first direction, and a second covering portion 113 provided on the other surface of the capacitance forming portion Ac in the first direction.

[0060] Here, the first cover portion 112 may be referred to as an upper cover portion 112 disposed above the capacitance forming portion Ac in the first direction, and the second cover portion 113 may be referred to as a lower cover portion 113 disposed below the capacitance forming portion Ac in the first direction.

[0061] The upper covering portion 112 and the lower covering portion 113 may be formed by stacking a single dielectric layer 111 or two or more dielectric layers 111 on the upper and lower surfaces of the capacitor forming portion Ac, respectively, in the first direction, and may be used to prevent damage to the internal electrodes 121 and 122 caused by physical stress and / or chemical stress.

[0062] The upper cover 112 and the lower cover 113 do not include the internal electrodes 121 and 122, and may include the same material as that of the dielectric layer 111. That is, the upper cover 112 and the lower cover 113 may include a ceramic material, for example, a barium titanate (BaTiO3)-based material (or referred to as a barium titanate (BaTiO3)-based ceramic material), and may also include a piezoelectric ceramic material other than the barium titanate (BaTiO3)-based material.

[0063] That is, in the multilayer electronic component 100 according to the example embodiment of the present disclosure, the upper cover 112 and the lower cover 113 may include a barium titanate (BaTiO 3 )-based material as a main component and may include a piezoelectric ceramic material other than the barium titanate (BaTiO 3 )-based material as a subcomponent.

[0064] As described above, as the demand for IT electronic devices with smaller size and higher integration increases, the conditions related to acoustic noise in such devices are becoming more stringent. Therefore, there is a need for products with improved acoustic noise characteristics.

[0065] When the MLCC according to the related art is continuously exposed to acoustic noise generated when a high frequency is applied and operates, the MLCC may have a negative impact on adjacent circuits or devices, or may make electrical signal transmission unstable. In addition, the continuous acoustic noise generation may deform the MLCC itself, so that the MLCC may have reduced reliability and durability, which may cause noise problems for users of devices including the MLCC.

[0066] In order to solve such a problem, research on sheets with low acoustic noise has been conducted. However, in the present disclosure, instead of designing a sheet with low acoustic noise, a vibration opposite to the vibration generated by a multilayer electronic component when an AC voltage is applied may be generated, which may have the effect of eliminating the noise caused by the vibration.

[0067] Generally, a piezoelectric material may be a material having the property of converting electrical energy into kinetic energy using a positive piezoelectric effect or converting kinetic energy into electrical energy using an inverse piezoelectric effect. The piezoelectric effect may be divided into a positive piezoelectric effect and an inverse piezoelectric effect. The positive piezoelectric effect may be an effect of generating electrical energy when a piezoelectric device is deformed, and the inverse piezoelectric effect may be an effect of generating displacement when electrical energy is applied to a piezoelectric device. Among these effects, the inverse piezoelectric effect may be applied to various fields, such as piezoelectric sensors, actuators, motors, and the like.

[0068] Therefore, in the present disclosure, the direct piezoelectric effect or the inverse piezoelectric effect may be used to eliminate the electrostrictive stress applied to the multilayer electronic component, thereby improving the reliability of the multilayer electronic component.

[0069] The piezoelectric ceramic material described herein may refer to a piezoelectric ceramic material other than a barium titanate (BaTiO 3 )-based material.

[0070] In addition, in the present disclosure, "main component" may refer to a component that occupies a relatively large atomic percentage compared to other components, and may refer to a component that occupies 50 at% or more relative to the total number of atoms in the entire composition or the entire dielectric layer. "Subcomponent" may refer to a component that occupies a relatively small atomic percentage compared to other components, and may refer to a component that occupies less than 50 at% relative to the total number of atoms in the entire composition or the entire dielectric layer.

[0071] The piezoelectric ceramic material may include at least one of a single crystal, a soft piezoelectric ceramic, a hard piezoelectric ceramic, and a high temperature ceramic.

[0072] More specifically, the single crystal may include 0.67Pb(Mg 1 / 3 Nb 2 / 3 )O3-0.33PbTiO3(0.67PMN-0.33PT), 0.71Pb(Mg 1 / 3 Nb 2 / 3 )O3-0.29PbTiO3(0.71PMN-0.29PT), 0.93Pb(Zn 1 / 3 Nb 2 / 3 )O3-0.07PbTiO3(0.93PZN-0.07PT), 0.91Pb(Zn 1 / 3 Nb 2 / 3 )O3-0.07PbTiO3(0.91PZN-0.07PT), 0.66Pb(In 1 / 2Nb 1 / 2 )O3-0.34PbTiO3(0.66PIN-0.34PT), potassium sodium tantalate niobate (KNNT), lithium niobate (LiNbO3) and alpha quartz (SiO2).

[0073] The piezoelectric ceramic material in the single crystal form may maintain its crystal form during the sintering process, and may be in the single crystal form in the cover portions 112 and 113 even after sintering.

[0074] A method of verifying the presence or absence of a single crystal or verifying a single crystal material may include, for example, verifying the presence or absence of a single crystal by verifying the structure of a lattice detected via a measured peak when measurement is performed using X-ray diffraction (XRD), or verifying a specific single crystal material from a detected peak, but the present disclosure is not particularly limited thereto.

[0075] Soft piezoelectric ceramics may include lead zirconate titanate-5A (PZT-5A), 2.5% samarium-doped lead magnesium niobate-29 lead titanate (2.5Sm-PMN-29PT), textured lead magnesium niobate-lead titanate (textured PMN-PT), lead zinc niobate-lead zirconate titanate (0.3PZN-0.7PZT), lead niobate-lead zirconate-lead titanate (0.55PNN-0.135PZ-0.315PT), textured potassium sodium niobate tantalate (textured (KNL)(NTS)O3), sodium bismuth titanate (BNT), and NaNbO3-BaZrO3-BiLa4Ti3O 12 At least one of (NKN-BZ-BLT).

[0076] The hard piezoelectric ceramics may include potassium sodium niobate-potassium calcium niobate (KNN-KCN), lead zirconate titanate-4 (PZT-4), lead zirconate titanate-8 (PZT-8), lead magnesium manganate niobate-lead zirconate titanate (PMMnN-PZT), lead magnesium manganate niobate-lead zirconate titanate with 0.2wt% copper oxide (PMMnN-PZT+0.2wt%CuO), lead strontium niobate-lead nickel niobate-lead zirconate titanate (0.0 15PSN-0.3PNN-0.685PZT), lead magnesium strontium niobate-lead zirconate titanate (PMS-PZT), lead magnesium strontium niobate-lead nickel niobate-lead zirconate titanate (PMS-PNN-PZT), lead niobate-lead magnesium strontium niobate-lead zirconate titanate (PNW-PMS-PZT), and lead strontium niobate-lead zinc niobate-lead zirconate titanate with manganese (PSN-PZN-PZT-Mn).

[0077] High temperature ceramics may include bismuth scandium oxide-lead titanium oxide (0.36BiScO3-0.64PbTiO3), bismuth gallium scandium oxide-lead titanium oxide (0.4Bi(Ga 1 / 4 Sc 3 / 4 )O3-0.6PbTiO3), bismuth-scandium-oxide-lead-titanium-oxide with manganese (0.34BS-0.66PT-Mn), bismuth-iron-scandium-oxide-lead-titanium-oxide (0.45Bi(Fe 1 / 2 Sc 1 / 2 )O3-0.55PbTiO3), bismuth scandium oxide-lead titanium oxide with lithium niobate (0.98(0.36BiScO3-0.64PbTiO3)-0.02LiNbO3), bismuth magnesium titanium oxide-lead titanium oxide (0.63Bi(Mg 1 / 2 Ti 1 / 2 )O3-0.37PbTiO3), bismuth-scandium-nickel-titanium oxide-lead-titanium oxide (0.46[BiScO3+Bi(Ni 1 / 2 Ti 1 / 2)O3]-0.54PbTiO3), and bismuth scandium oxide-bismuth zirconium zinc oxide-lead titanium oxide (0.35BiScO3-0.025Bi(Zr 0.5 Zn 0.5 )O3-0.625PbTiO3).

[0078] In an exemplary embodiment of the present disclosure, the covering portions 112 and 113 may include a plurality of dielectric grains, and the plurality of dielectric grains may include a first dielectric grain 10 including a barium titanate (BaTiO 3 )-based material and a second dielectric grain 20 including the above-mentioned piezoelectric ceramic material other than the barium titanate (BaTiO 3 )-based material.

[0079] The covering parts 112 and 113 may include a second dielectric grain 20 including a piezoelectric ceramic material, so that a direct piezoelectric effect or an inverse piezoelectric effect can be effectively realized, and acoustic noise applied to the multilayer electronic component 100 can be eliminated to reduce electrostrictive stress, thereby improving the reliability of the multilayer electronic component 100 and extending the life of the multilayer electronic component 100.

[0080] The method of measuring the dielectric grains may include, for example, measuring a cross section of the cover in the first direction and the second direction or a cross section of the cover in the first direction and the third direction using an SEM or a transmission electron microscope (TEM). In an energy dispersive X-ray spectroscopy (EDS) mode, dielectric grains including barium (Ba) elements, titanium (Ti) elements, and oxygen (O) elements may be interpreted as first dielectric grains 10, and dielectric grains including elements included in the piezoelectric ceramic material may be interpreted as second dielectric grains 20.

[0081] In addition, the dielectric constant, dielectric loss, frequency characteristics, etc. of the covers 112 and 113 measured using equipment such as an LCR meter, an impedance analyzer, a d33 meter, etc. when the covers 112 and 113 include the second dielectric grains 20 may be different from the dielectric constant, dielectric loss, frequency characteristics, etc. of the covers 112 and 113 measured when the covers 112 and 113 include only the first dielectric grains 10, or the piezoelectric characteristics, etc. of the covers 112 and 113 may be improved according to the product. Such a piezoelectric material measuring device may be used to measure whether the second dielectric grains 20 are included, but the present disclosure is not particularly limited thereto.

[0082] In the multilayer electronic component 100 according to an exemplary embodiment of the present disclosure, the number of the first dielectric grains 10 included in the covering portions 112 and 113 is A, and the number of the second dielectric grains 20 included in the covering portions 112 and 113 is B, and the covering portions 112 and 113 may satisfy B ≤ A. That is, among the plurality of dielectric grains included in the covering portions 112 and 113, the first dielectric grains 10 may be more than the second dielectric grains 20. Here, the covering portions 112 and 113 satisfying B ≤ A may mean that the upper covering portion 112 satisfies B ≤ A or the lower covering portion 113 satisfies B ≤ A. Alternatively, the covering portions 112 and 113 satisfying B ≤ A may mean that both the upper covering portion 112 and the lower covering portion 113 satisfy B ≤ A.

[0083] For example, referring to Figure 2 and Figure 4 , regarding the cross-section of the above-mentioned covering portion, the number of the first dielectric grains 10 included in a 10 µm × 10 µm area may be defined as A, and the number of the second dielectric grains 20 included in the 10 µm × 10 µm area may be defined as B, which may mean that the 10 µm × 10 µm area of the cross-section of the covering portion may satisfy B ≤ A, but the present disclosure is not particularly limited thereto.

[0084] The number A of the first dielectric grains included in the covering portions 112 and 113 and the number B of the second dielectric grains included in the covering portions 112 and 113 may satisfy B ≤ A, thereby effectively reducing the electrostrictive stress caused by the acoustic noise applied to the covering portions 112 and 113, maintaining the strength of the covering portions 112 and 113, and sufficiently protecting the inner electrodes 121 and 122.

[0085] The number A of the first dielectric grains included in the covering portions 112 and 113 and the number B of the second dielectric grains included in the covering portions 112 and 113 may satisfy A < B, which may more effectively reduce the electrostrictive stress caused by the acoustic noise applied to the covering portions 112 and 113. However, the covering portions 112 and 113 may have reduced strength, resulting in insufficient protection of the inner electrodes 121 and 122.

[0086] Alternatively, in the multilayer electronic component 100 according to the example embodiment of the present disclosure, the number of the first dielectric grains 10 included in the plurality of dielectric grains in the cover parts 112 and 113 may have a percentage of 50% or more, or the number of the second dielectric grains 20 included in the plurality of dielectric grains in the cover parts 112 and 113 may have a percentage of 50% or less. Here, the number of the first dielectric grains 10 included in the plurality of dielectric grains in the cover parts 112 and 113 having a percentage of 50% or more, or the number of the second dielectric grains 20 included in the plurality of dielectric grains in the cover parts 112 and 113 having a percentage of 50% or less may mean that the number of the first dielectric grains 10 included in the plurality of dielectric grains in at least one of the upper cover part 112 and the lower cover part 113 may have a percentage of 50% or more, or that the number of the second dielectric grains 20 included in the plurality of dielectric grains in at least one of the upper cover part 112 and the lower cover part 113 may have a percentage of 50% or less. For example, with respect to the cross section of the above-mentioned covering portion, the number of first dielectric grains 10 among the plurality of dielectric grains included in the area of ​​10µm×10µm may have a percentage of 50% or more, or the number of second dielectric grains 20 among the plurality of dielectric grains may have a percentage of 50% or less, but the present disclosure is not particularly limited thereto.

[0087] The number of first dielectric grains among the plurality of dielectric grains included in the covers 112 and 113 may have a percentage of 50% or more, or the number of second dielectric grains among the plurality of dielectric grains included in the covers 112 and 113 may have a percentage of 50% or less, thereby effectively reducing electrostrictive stress caused by acoustic noise applied to the covers 112 and 113, maintaining the strength of the covers 112 and 113, and fully protecting the internal electrodes 121 and 122.

[0088] When the number of first dielectric grains among the plurality of dielectric grains included in the covers 112 and 113 has a percentage less than 50%, or when the number of second dielectric grains among the plurality of dielectric grains included in the covers 112 and 113 has a percentage greater than 50%, it is possible to more effectively reduce electrostrictive stress caused by acoustic noise applied to the covers 112 and 113. However, the covers 112 and 113 may have reduced strength, resulting in insufficient protection of the internal electrodes 121 and 122.

[0089] The thickness tc of each of the covering parts 112 and 113 is not limited.

[0090] To more easily achieve high capacitance and miniaturization of multilayer electronic components, the thickness tc of each of the covers 112 and 113 may be 100 μm or less, preferably 30 μm or less, and in ultra-small products, more preferably 20 μm or less.

[0091] The thickness tc of each of the covering portions 112 and 113 may refer to the size of each of the covering portions 112 and 113 in the first direction. In addition, the thickness tc of each of the covering portions 112 and 113 may refer to the average thickness tc of each of the covering portions 112 and 113, and may refer to the average size of each of the covering portions 112 and 113 in the first direction.

[0092] The average size of each of the covering portions 112 and 113 in the first direction may be measured by scanning an image obtained by scanning a cross section of the body 110 in the first direction and the second direction with an SEM at a magnification of 10000. More specifically, the average size of one covering portion in the first direction may refer to an average value of the sizes of one covering portion in the first direction measured at thirty points equally spaced from each other in the second direction in the scanned image.

[0093] In addition, the average size of the covering portion in the first direction measured using the above method may be substantially the same as the average size of the covering portion in the first direction measured in a cross section of the body 110 in the first and third directions.

[0094] The multilayer electronic component 100 may further include side margin parts 114 and 115 provided on both side surfaces of the capacitance forming part Ac in the third direction.

[0095] More specifically, the side edge portions 114 and 115 include: a first side edge portion 114, which is disposed on a side surface of the capacitor forming portion Ac in the third direction (i.e., the width direction); and a second side edge portion 115, which is disposed on the other side surface of the capacitor forming portion Ac in the third direction (i.e., the width direction).

[0096] As shown, the side margin parts 114 and 115 may refer to regions between both end surfaces of the first and second internal electrodes 121 and 122 and an outer surface of the body 110 with respect to a cross section of the body 110 in the first and third directions.

[0097] The internal electrodes 121 and 122 may be formed by applying a conductive paste to portions of the ceramic green sheets applied to the capacitance forming portion Ac except for portions where the side edge portions 114 and 115 are to be formed. In order to suppress steps caused by the internal electrodes 121 and 122, the edge portions 114 and 115 may be formed by, after laminating the ceramic green sheets to obtain a laminated body, cutting the laminated body to expose the internal electrodes 121 and 122 to both side surfaces of the capacitance forming portion Ac in the third direction, and then stacking a single dielectric layer 111 or two or more dielectric layers 111 on both side surfaces of the capacitance forming portion Ac in the third direction.

[0098] The side margin parts 114 and 115 may substantially serve to prevent damage to the internal electrodes 121 and 122 caused by physical stress and / or chemical stress.

[0099] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122, and may include the same material as that of the dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 may include a ceramic material, for example, a barium titanate (BaTiO3)-based material, and may further include a piezoelectric ceramic material other than the barium titanate (BaTiO3)-based material.

[0100] That is, in the multilayer electronic component 100 according to the example embodiment of the present disclosure, the first side margin part 114 and the second side margin part 115 may include a barium titanate (BaTiO 3 )-based material as a main component and a piezoelectric ceramic material other than the barium titanate (BaTiO 3 )-based material as a subcomponent.

[0101] Hereinafter, the description of the piezoelectric ceramic material related to the side edge parts 114 and 115 may be the same as the description about the piezoelectric ceramic material of the cover parts 112 and 113 , and the repeated description may be omitted.

[0102] However, the side edge portions 114 and 115 may not need to include the same piezoelectric ceramic material as the piezoelectric ceramic material included in the cover portions 112 and 113, and may include a piezoelectric ceramic material different from the piezoelectric ceramic material included in the cover portions 112 and 113. When the side edge portions 114 and 115 include a plurality of piezoelectric ceramic materials, the plurality of piezoelectric ceramic materials may be different from the piezoelectric ceramic materials included in the cover portions 112 and 113, or at least one of the plurality of piezoelectric ceramic materials may be the same as the piezoelectric ceramic material included in the cover portions 112 and 113.

[0103] That is, the piezoelectric ceramic material included in the cover parts 112 and 113 may be defined as a first piezoelectric ceramic material, and the piezoelectric ceramic material included in the side edge parts 114 and 115 may be defined as a second piezoelectric ceramic material. The first piezoelectric ceramic material and the second piezoelectric ceramic material may be the same as or different from each other, or may partially include the same piezoelectric ceramic material.

[0104] The piezoelectric ceramic material included in the side edge parts 114 and 115 may be the same as the piezoelectric ceramic material included in the cover parts 112 and 113 , and may include at least one of single crystal, soft piezoelectric ceramic, hard piezoelectric ceramic, and high temperature ceramic.

[0105] In an example embodiment of the present disclosure, the side edge parts 114 and 115 may include a plurality of dielectric grains, and the plurality of dielectric grains include first dielectric grains including a barium titanate (BaTiO 3 )-based material and second dielectric grains including the above-described piezoelectric ceramic material.

[0106] The side edge portions 114 and 115 may include a second dielectric grain 20 including a piezoelectric ceramic material, so that a direct piezoelectric effect or an inverse piezoelectric effect can be effectively realized, and acoustic noise applied to the multilayer electronic component 100 can be eliminated to reduce electrostrictive stress, thereby improving the reliability of the multilayer electronic component 100 and extending the life of the multilayer electronic component 100.

[0107] The method of measuring the dielectric grains may include, for example, measuring a cross section of a multilayer electronic component including a side edge portion in a first direction and a third direction using an SEM or a TEM. In an EDS mode, dielectric grains including a barium (Ba) element, a titanium (Ti) element, and an oxygen (O) element may be interpreted as first dielectric grains, and dielectric grains including an element included in a piezoelectric ceramic material may be interpreted as second dielectric grains.

[0108] In the multilayer electronic component 100 according to the example embodiment of the present disclosure, when the number of first dielectric grains included in the side margin parts 114 and 115 is A and the number of second dielectric grains included in the side margin parts 114 and 115 is B, the side margin parts 114 and 115 may satisfy B≤A. That is, among the plurality of dielectric grains included in the side margin parts 114 and 115, the first dielectric grains may be more than the second dielectric grains.

[0109] Here, the number of first dielectric grains included in side edge portions 114 and 115 may be defined as A, and the number of second dielectric grains included in side edge portions 114 and 115 may be defined as B. However, the number A of first dielectric grains and the number B of second dielectric grains included in side edge portions 114 and 115 may be different from the number A of first dielectric grains and the number B of second dielectric grains included in covering portions 112 and 113, and those skilled in the art will be able to understand the description of the covering portion and the description of the side edge portion respectively.

[0110] For example, regarding the cross-section of the above-mentioned side edge portion, the number of first dielectric grains 10 included in a 10 µm × 10 µm area may be defined as A, and the number of second dielectric grains 20 included in the 10 µm × 10 µm area may be defined as B, which may mean that the 10 µm × 10 µm area of the cross-section of the covering portion may satisfy B ≤ A, but the present disclosure is not particularly limited thereto.

[0111] The number A of first dielectric grains included in side edge portions 114 and 115 and the number B of second dielectric grains included in side edge portions 114 and 115 may satisfy B ≤ A, thereby effectively reducing the electrostrictive stress caused by acoustic noise applied to side edge portions 114 and 115, maintaining the strength of side edge portions 114 and 115, and sufficiently protecting inner electrodes 121 and 122.

[0112] When the number A of first dielectric grains included in side edge portions 114 and 115 and the number B of second dielectric grains included in side edge portions 114 and 115 satisfy A < B, the electrostrictive stress caused by acoustic noise applied to side edge portions 114 and 115 can be more effectively reduced. However, side edge portions 114 and 115 may have reduced strength, resulting in insufficient protection of inner electrodes 121 and 122.

[0113] Optionally, in the multilayer electronic component 100 according to an exemplary embodiment of the present disclosure, the number of first dielectric grains among the plurality of dielectric grains included in side edge portions 114 and 115 may be 50% or more, or the number of second dielectric grains among the plurality of dielectric grains included in side edge portions 114 and 115 may be 50% or less.

[0114] For example, regarding the cross-section of the above-mentioned side edge portion, the number of first dielectric grains 10 among the plurality of dielectric grains included in a 10 µm × 10 µm area may be 50% or more, or the number of second dielectric grains 20 among the plurality of dielectric grains may be 50% or less, but the present disclosure is not particularly limited thereto.

[0115] The number of first dielectric grains among the plurality of dielectric grains included in the side margin portions 114 and 115 may have a percentage of 50% or more, or the number of second dielectric grains among the plurality of dielectric grains included in the side margin portions 114 and 115 may have a percentage of 50% or less, thereby effectively reducing electrostrictive stress caused by acoustic noise applied to the side margin portions 114 and 115, maintaining the strength of the side margin portions 114 and 115, and fully protecting the internal electrodes 121 and 122.

[0116] When the number of first dielectric grains among the plurality of dielectric grains included in the side margin parts 114 and 115 has a percentage of less than 50%, or when the number of second dielectric grains among the plurality of dielectric grains included in the side margin parts 114 and 115 has a percentage of more than 50%, the electrostrictive stress caused by the acoustic noise applied to the side margin parts 114 and 115 may be more effectively reduced. However, the side margin parts 114 and 115 may have reduced strength, resulting in insufficient protection of the internal electrodes 121 and 122.

[0117] The width wm of each of the first side margin portion 114 and the second side margin portion 115 is not limited.

[0118] To more easily achieve high capacitance and miniaturization of the multilayer electronic component 100 , the width wm of each of the side edge portions 114 and 115 may be 100 μm or less, preferably 30 μm or less, and more preferably 20 μm or less in ultra-small products.

[0119] The width wm of each of the side edge portions 114 and 115 may refer to the size of each of the side edge portions 114 and 115 in the third direction. In addition, the width wm of each of the side edge portions 114 and 115 may refer to the average width of each of the side edge portions 114 and 115, and may refer to the average size of each of the side edge portions 114 and 115 in the third direction.

[0120] The average size of each of the side edge portions 114 and 115 in the third direction may be measured by scanning an image obtained by scanning a cross section of the body 110 in the first direction and the third direction with a SEM at a magnification of 10000. More specifically, the average size of one side edge portion in the third direction may refer to an average value of the sizes of one side edge portion in the third direction measured at ten points equally spaced from each other in the first direction in the scanned image.

[0121] In the exemplary embodiment of the present disclosure, a structure in which the multilayer electronic component 100 has two external electrodes 131 and 132 is described, but the number, shape, etc. of the external electrodes 131 and 132 may be changed according to the form of the internal electrodes 121 and 122 and / or other purposes.

[0122] The external electrodes 131 and 132 may be disposed on the body 110 and connected to the internal electrodes 121 and 122 .

[0123] More specifically, the external electrodes 131 and 132 may include a first external electrode 131 and a second external electrode 132 respectively disposed on the third surface 3 and the fourth surface 4 of the body 110, and the first external electrode 131 and the second external electrode 132 are respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 may be disposed on the third surface 3 of the body 110 and connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and connected to the second internal electrode 122.

[0124] In addition, the external electrodes 131 and 132 may extend onto a portion of the first surface 1 and the second surface 2 of the body 110, and / or may extend onto a portion of the fifth surface 5 and the sixth surface 6 of the body 110. That is, the first external electrode 131 may be disposed on a portion of at least one of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the body 110 and the third surface 3 of the body 110, and the second external electrode 132 may be disposed on a portion of at least one of the first surface 1, the second surface 2, the fifth surface 5, and the sixth surface 6 of the body 110 and the fourth surface 4 of the body 110.

[0125] The external electrodes 131 and 132 may be formed using any material having conductivity such as metal, etc., and a specific material may be determined in consideration of electrical characteristics, structural stability, etc. In addition, the external electrodes 131 and 132 may have a multi-layered structure.

[0126] For example, the external electrodes 131 and 132 may include an electrode layer disposed on the body 110 and plating layers 131 c and 132 c disposed on the electrode layer.

[0127] For a more specific example of the electrode layer, the electrode layer may include first electrode layers 131 a and 132 a (sintered electrodes including a first conductive metal and glass) and / or second electrode layers 131 b and 132 b (resin-based electrodes including a second conductive metal and resin).

[0128] Here, the first conductive metal may refer to a conductive metal included in the first electrode layers 131a and 132a, and the second conductive metal may refer to a conductive metal included in the second electrode layers 131b and 132b. In this case, the first conductive metal and the second conductive metal may be the same as or different from each other, but the present disclosure is not particularly limited thereto.

[0129] In addition, the electrode layer may have a form in which a sintered electrode and a resin-based electrode are sequentially formed on the body.

[0130] In addition, the electrode layer may be formed by transferring a sheet including a conductive metal onto the body or by transferring a sheet including a conductive metal onto a sintered electrode.

[0131] A metal material having excellent electrical conductivity may be used as the conductive metal included in the electrode layers 131a, 132a, 131b, and 132b. For example, the conductive metal may be at least one selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but the present disclosure is not particularly limited thereto.

[0132] In an exemplary embodiment of the present disclosure, the electrode layers 131a, 132a, 131b, and 132b may have a two-layer structure including first electrode layers 131a and 132a and second electrode layers 131b and 132b. Therefore, the external electrodes 131 and 132 may include: first electrode layers 131a and 132a including conductive metal and glass; and second electrode layers 131b and 132b disposed on the first electrode layers 131a and 132a and including conductive metal and resin.

[0133] The first electrode layers 131 a and 132 a including glass may serve to improve adhesiveness to the body 110 , and the second electrode layers 131 b and 132 b including resin may serve to improve bending strength.

[0134] The conductive metal used for the electrode layer is not particularly limited as long as it is a metal material that can be electrically connected to the internal electrodes 121 and 122 to form a capacitor. For example, the conductive metal may include at least one selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The first electrode layers 131a and 132a may be formed by coating a conductive paste prepared by adding glass frit to a conductive metal powder and then performing sintering thereon.

[0135] A conductive metal included in the second electrode layers 131 b and 132 b may serve to allow electrical connection to the first electrode layers 131 a and 132 a .

[0136] The conductive metal included in the second electrode layers 131 b and 132 b is not particularly limited as long as it is a metal material that can be electrically connected to the electrode layers 131 a and 132 a, and the conductive metal may include at least one selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0137] The conductive metal included in the second electrode layers 131b and 132b may include at least one of spherical particles and flaky particles. That is, the conductive metal may be formed only of flaky particles, or may be formed only of spherical particles, or may be formed by a combination of flaky particles and spherical particles. Here, the spherical particles may have an incomplete spherical shape, for example, a shape in which the length ratio between the major axis and the minor axis (major axis / minor axis) is 1.45 or less. Flaky particles may refer to particles having a flat and elongated shape, and the present disclosure is not particularly limited thereto. For example, the flaky particles may have a shape in which the length ratio between the major axis and the minor axis (major axis / minor axis) may be 1.95 or more. The length of the major axis and the length of the minor axis of each of the spherical particles and the flaky particles may be measured from the following image: an image obtained by scanning a cross section in the first direction and the second direction of the central portion of the multilayer electronic component in the third direction with a SEM.

[0138] The resin included in the second electrode layers 131b and 132b may be used to ensure adhesive properties and absorb impact. The resin included in the second electrode layers 131b and 132b is not particularly limited as long as it is a material that can have adhesive properties and impact absorption properties while being mixed with conductive metal powder particles to form a paste. The resin may include, for example, an epoxy resin.

[0139] In addition, the second electrode layers 131b and 132b may include a plurality of metal particles, an intermetallic compound, and a resin. Since the intermetallic compound is included therein, the second electrode layers 131b and 132b may also improve electrical connectivity with the first electrode layers 131a and 132a. The intermetallic compound may connect the plurality of metal particles to each other to improve electrical connectivity, and may surround the plurality of metal particles to connect the plurality of metal particles to each other.

[0140] In this case, the intermetallic compound may include a metal having a melting point lower than the solidification temperature of the resin. That is, since the intermetallic compound includes a metal having a melting point lower than the solidification temperature of the resin, the metal having a melting point lower than the solidification temperature of the resin may melt during the drying and solidification process and may form the intermetallic compound with a portion of the metal particles to surround the metal particles. In this case, the intermetallic compound may preferably include a metal having a melting point of 300° C. or lower.

[0141] For example, the intermetallic compound may include Sn having a melting point of 213° C. to 220° C. During the drying and curing process, Sn may melt, and the molten Sn may allow metal particles such as Ag, Ni, or Cu having a high melting point to be wetted by a capillary phenomenon, and the molten Sn may react with a portion of the metal particles such as Ag, Ni, or Cu to form an intermetallic compound such as Ag3Sn, Ni3Sn4, Cu6Sn5, Cu3Sn, etc. Ag, Ni, or Cu that does not react with the molten Sn may remain in the form of metal particles.

[0142] Thus, the plurality of metal particles may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0143] The plating layers 131c and 132c are used to improve mounting characteristics.

[0144] The type of the plating layers 131c and 132c is not particularly limited, and may be a single plating layer including at least one of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, or may be a plurality of plating layers, each of which includes at least one of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof.

[0145] For a more specific example, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, or may have a form in which Ni plating layers and Sn plating layers are sequentially formed on the electrode layers 131a, 132a, 131b, and 132b, or may have a form in which Sn plating layers, Ni plating layers, and Sn plating layers are sequentially formed on the electrode layers 131a, 132a, 131b, and 132b. In addition, the plating layers 131c and 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0146] The size of the multilayer electronic component 100 is not particularly limited.

[0147] However, in order to achieve both miniaturization and high capacitance, the dielectric layer and the internal electrode may need to have a reduced thickness to increase the number of stacked layers. Therefore, according to the present disclosure, a multilayer electronic component 100 having a size of 3216 (length×width: 3.2 mm×1.6 mm) or less may have a more significant effect.

[0148] While example embodiments have been shown and described above, it will be readily apparent to those skilled in the art that modifications and variations may be made without departing from the scope of the present disclosure as defined by the appended claims.

[0149] In addition, the term "exemplary embodiment" does not refer to the same exemplary embodiment, but is provided to describe the unique features of each exemplary embodiment. The exemplary embodiment set forth above may also be implemented in combination with the features of another exemplary embodiment. For example, even if the content described for an exemplary embodiment is not described in another exemplary embodiment, unless otherwise or contradictorily described in another exemplary embodiment, the content may be understood as a description related to another exemplary embodiment.

[0150] The terms used herein are only used to describe particular example embodiments and are not intended to be limiting of the present disclosure. Unless the context clearly indicates otherwise, a singular form may also include a plural form.

Claims

1. A multilayer electronic component comprising: a main body including a capacitance forming part and a covering part, the capacitance forming part including a dielectric layer and inner electrodes arranged alternately with the dielectric layer in a first direction, the covering part being arranged on both surfaces of the capacitance forming part in the first direction; as well as an outer electrode, disposed on the body, Herein, the covering portion includes a barium titanate-based material as a main component and a piezoelectric ceramic material other than the barium titanate-based material as a subcomponent.

2. The multilayer electronic component according to claim 1, wherein The cover portion includes a plurality of dielectric grains, and The plurality of dielectric grains include first dielectric grains including the barium titanate-based material and second dielectric grains including the piezoelectric ceramic material.

3. The multilayer electronic component according to claim 2, wherein: When the number of the first dielectric grains included in the cover portion is A and the number of the second dielectric grains included in the cover portion is B, B≦A is satisfied.

4. The multilayer electronic component according to claim 2, wherein: The number of the first dielectric grains among the plurality of dielectric grains included in the cover has a percentage of 50% or more.

5. The multilayer electronic component according to claim 2, wherein: The number of the second dielectric grains among the plurality of dielectric grains included in the cover has a percentage of 50% or less.

6. The multilayer electronic component according to claim 1, wherein: The piezoelectric ceramic material includes at least one of single crystal, soft piezoelectric ceramic, hard piezoelectric ceramic and high temperature ceramic.

7. The multilayer electronic component according to claim 6, wherein: The single crystal includes at least one of 0.67PMN-0.33PT, 0.71PMN-0.29PT, 0.93PZN-0.07PT, 0.91PZN-0.07PT, 0.66PIN-0.34PT, KNNT, LiNbO3 and α-quartz.

8. The multilayer electronic component according to claim 6, wherein: The soft piezoelectric ceramic includes at least one of PZT-5A, 2.5Sm-PMN-29PT, textured PMN-PT, 0.3PZN-0.7PZT, 0.55PNN-0.135PZ-0.315PT, textured (KNL)(NTS)O3, BNT and NKN-BZ-BLT.

9. The multilayer electronic component according to claim 6, wherein: The hard piezoelectric ceramic includes at least one of KNN-KCN, PZT-4, PZT-8, PMMnN-PZT, PMMnN-PZT+0.2wt%CuO, 0.015PSN-0.3PNN-0.685PZT, PMS-PZT, PMS-PNN-PZT, PNW-PMS-PZT and PSN-PZN-PZT-Mn.

10. The multilayer electronic component according to claim 6, wherein The high temperature ceramics include 0.36BiScO3-0.64PbTiO3, 0.4Bi(Ga 1 / 4 Sc 3 / 4 )O3-0.6PbTiO3, 0.34BS-0.66PT-Mn, 0.45Bi(Fe 1 / 2 Sc 1 / 2 )O3-0.55PbTiO3, 0.98(0.36BiScO3-0.64PbTiO3)-0.02LiNbO3, 0.63Bi(Mg 1 / 2 Ti 1 / 2 )O3-0.37PbTiO3, 0.46[BiScO3+Bi(Ni 1 / 2 Ti 1 / 2 )O3]-0.54PbTiO3 and 0.35BiScO3-0.025Bi(Zr 0.5 Zn 0.5 )O3-0.625PbTiO3.

11. The multilayer electronic component according to claim 1, wherein A region of the capacitance forming portion located within 10 μm from an interface between the capacitance forming portion and the covering portion toward a central portion of the capacitance forming portion includes the piezoelectric ceramic material.

12. The multilayer electronic component according to claim 1, wherein A region of the capacitance forming portion located outside 10 μm from an interface between the capacitance forming portion and the covering portion toward a central portion of the capacitance forming portion does not include the piezoelectric ceramic material.

13. The multilayer electronic component according to claim 1, wherein The capacitance forming portion does not include the piezoelectric ceramic material.

14. The multilayer electronic component according to claim 1, wherein The covering portion includes a first covering portion and a second covering portion, the first covering portion being provided on one surface of the capacitance forming portion in the first direction, the second covering portion being provided on the other surface of the capacitance forming portion in the first direction, and An average size of each of the first covering portion and the second covering portion in the first direction is 100 μm or less.

15. The multilayer electronic component according to claim 1, wherein The body has: a first surface and a second surface, which are opposite to each other in the first direction; a third surface and a fourth surface, which are connected to the first surface and the second surface, and the third surface and the fourth surface are opposite to each other in the second direction; a fifth surface and a sixth surface connected to the first surface to the fourth surface, the fifth surface and the sixth surface facing each other in a third direction, The main body further includes side edge portions provided on two side surfaces of the capacitance forming portion that are opposite to each other in the third direction, and The side edge portion includes the barium titanate-based material as a main component and the piezoelectric ceramic material as a subcomponent.

16. The multilayer electronic component according to claim 1, wherein The dielectric layer comprises at least one of the following materials: (Ba 1-x Ca x )TiO3, where 0 < x < 1; Ba(Ti 1-y Ca y )O3, where 0 < y < 1; (Ba 1-x Ca x )(Ti 1-y Zr y )O3, where 0 < x < 1, 0 < y < 1; and Ba(Ti 1-y Zr y )O3, where 0 < y < 1.

17. The multilayer electronic component according to claim 1, wherein: The barium titanate-based material of the covering part includes at least one of the following materials: (Ba 1-x Ca x )TiO3, where 0 < x < 1; Ba(Ti 1-y Ca y )O3, where 0 < y < 1; (Ba 1- x Ca x )(Ti 1-y Zr y )O3, where 0 < x < 1, 0 < y < 1; and Ba(Ti 1-y Zr y )O3, where 0 < y < 1.

18. A multilayer electronic component comprising: a capacitor forming portion having a dielectric layer and internal electrodes alternately arranged with the dielectric layer; as well as The covering portion is disposed on the capacitance forming portion and includes a plurality of first dielectric grains including a barium titanate-based material and a plurality of second dielectric grains including a piezoelectric ceramic material other than the barium titanate-based material.

19. The multilayer electronic component according to claim 18, wherein: The material of the dielectric layer and the barium titanate-based material are at least one selected from the following materials: (Ba 1-x Ca x )TiO3, where 0 < x < 1; Ba(Ti 1-y Ca y )O3, where 0 < y < 1; (Ba 1-x Ca x )(Ti 1-y Zr y )O3, where 0 < x < 1, 0 < y < 1; and Ba(Ti 1-y Zr y )O3, where 0 < y < 1.

20. The multilayer electronic assembly of claim 18, wherein: The number of the second dielectric grains is greater than the number of the first dielectric grains.

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