Mask plate and its preparation method, mask device

Abstract

This application provides a photomask and its fabrication method and apparatus. The photomask includes a photomask body and a support structure. The photomask body has a mask opening. The support structure is disposed on the side of the photomask body facing the substrate, protruding from the surface of the photomask body facing the substrate. The orthographic projection of the support structure on the photomask body does not overlap with the orthographic projection of the mask opening on the photomask body. The photomask provided in this application, by providing a support structure on the side of the photomask body facing the substrate, with the support structure protruding from the surface of the photomask body facing the substrate and the orthographic projection of the support structure on the photomask body not overlapping with the orthographic projection of the mask opening on the photomask body, allows the support structure to contact the substrate during vapor deposition, releasing static electricity through the support structure and thus preventing electrostatic discharge from damaging the circuitry in the substrate.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a mask plate and its preparation method and mask device. Background Technology

[0002] Organic light-emitting diodes (OLEDs) and flat panel displays based on light-emitting diodes (LEDs) are widely used in various consumer electronics products such as mobile phones, televisions, laptops, and desktop computers due to their advantages such as high image quality, energy saving, thin body, and wide range of applications, becoming the mainstream of display devices.

[0003] The fabrication of some film layers (such as the light-emitting layer) in OLED display panels mainly employs vacuum evaporation technology. Specifically, materials are heated in a vacuum environment, causing them to sublimate, and a thin film of a certain shape is formed on a substrate by passing it through a patterned precision metal mask.

[0004] However, existing photomasks have the problem of electrostatic discharge damaging the circuitry in the substrate during the vapor deposition process. Summary of the Invention

[0005] In view of this, the purpose of this application is to provide a mask that can prevent electrostatic discharge from damaging the circuitry in the substrate.

[0006] To achieve the above objectives, this application provides a mask for depositing a film layer on a substrate, the mask comprising:

[0007] A mask plate body, wherein a mask opening is provided on the mask plate body;

[0008] A support structure is disposed on the side of the mask plate body facing the substrate. The support structure protrudes from the surface of the mask plate body facing the substrate. The orthographic projection of the support structure on the mask plate body does not overlap with the orthographic projection of the mask opening on the mask plate body.

[0009] In one embodiment, the support structure is made of the same material as the mask plate body and is integrally formed;

[0010] Preferably, the end of the support structure away from the mask body has a first shortest distance from the mask body, and the first shortest distance is greater than or equal to 10 μm.

[0011] In one embodiment, the mask plate body includes a half-etched area and a full-thickness area on the side facing the substrate, and the full-thickness area forms the support structure after the half-etched area is partially etched.

[0012] Preferably, the half-etch depth of the half-etch region is greater than or equal to 10 μm.

[0013] In one embodiment, the mask plate body is provided with a plurality of mask openings, which are arranged along a first direction and a second direction, wherein the first direction and the second direction are perpendicular.

[0014] In one embodiment, the substrate includes a plurality of sub-substrates, the orthographic projection of the mask opening on the mask plate body is located within the orthographic projection of the corresponding sub-substrates on the mask plate body, and the orthographic projection of the support structure on the mask plate body and the orthographic projection of the sub-substrates on the mask plate body do not overlap;

[0015] Preferably, the orthographic projection of the sub-substrate onto the mask body has a first boundary, and the orthographic projection of the support structure onto the mask body has a second shortest distance between the first boundary and the second shortest distance, which is greater than or equal to 100 μm.

[0016] In one embodiment, the support structure includes a plurality of support columns, which are spaced apart.

[0017] Preferably, the area of ​​the orthographic projection of each support post onto the mask plate body is greater than or equal to 0.5 mm². 2 ;

[0018] Preferably, the shape of the orthographic projection of the support column onto the mask plate body includes one or more of the following: rectangle, circle, ellipse, trapezoid, and parallelogram.

[0019] In one embodiment, the surface of the mask body facing the substrate includes a target area, the orthographic projection of the support structure on the mask body is located within the orthographic projection of the target area on the mask body, and the support structure abuts against the substrate during vapor deposition to form a gap between the target area and the substrate;

[0020] Preferably, the target area is the area formed by extending outward from the center position of the mask plate body toward the surface of the substrate;

[0021] Preferably, the orthographic projection of the substrate onto the mask body lies within the orthographic projection of the target region onto the mask body;

[0022] Preferably, the center position of the surface of the mask plate body facing the substrate coincides with the center position of the target area;

[0023] Preferably, the target area is rectangular, circular, or elliptical in shape;

[0024] Preferably, the surface of the mask body facing the substrate includes a plurality of target regions, the plurality of target regions are spaced apart, the mask includes a plurality of support structures, and the orthographic projection of each support structure on the mask body is located within the orthographic projection of the corresponding target region on the mask body.

[0025] Based on the same inventive concept, this application also discloses a method for preparing a mask, which includes:

[0026] A support structure is formed on the side of the mask body facing the substrate; wherein the support structure protrudes from the surface of the mask body facing the substrate, and the orthographic projection of the support structure on the mask body does not overlap with the orthographic projection of the mask opening on the mask body.

[0027] In one embodiment, forming a support structure on the side of the mask plate body facing the substrate includes:

[0028] A half-cut area and a full-thickness area are divided on the side of the mask plate body facing the substrate; wherein the orthographic projection of the full-thickness area on the mask plate body and the orthographic projection of the mask opening on the mask plate body do not overlap.

[0029] The half-etched area is partially etched, and the full-thickness area forms the support structure after the half-etched area is partially etched.

[0030] Preferably, the method for preparing the mask further includes, either before forming the support structure on the side of the mask body facing the substrate, or after forming the support structure on the side of the mask body facing the substrate, or simultaneously forming the support structure on the side of the mask body facing the substrate:

[0031] A mask opening is formed on the mask plate body.

[0032] Based on the same inventive concept, this application also discloses a mask device, which includes:

[0033] frame;

[0034] And the mask plate in the above embodiments, the mask plate being disposed on the frame.

[0035] Compared with the prior art, the mask provided in this application provides a support structure on the side of the mask body facing the substrate. The support structure protrudes from the surface of the mask body facing the substrate. The orthographic projection of the support structure on the mask body does not overlap with the orthographic projection of the mask opening on the mask body. During vapor deposition, the support structure contacts the substrate, and static electricity is released through the support structure, thereby avoiding electrostatic damage to the circuits in the substrate. Attached Figure Description

[0036] To more clearly illustrate the technical solutions in this application or related technologies, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0037] Figure 1 This is a schematic diagram of a process for depositing a film layer on a substrate using a related photomask. Figure 1 ;

[0038] Figure 2 This is a schematic diagram of a process for depositing a film layer on a substrate using a related photomask. Figure 2 ;

[0039] Figure 3 This is a schematic diagram of a mask plate in one embodiment of this application;

[0040] Figure 4 for Figure 3 A schematic diagram of the target area;

[0041] Figure 5 This is a schematic diagram of the layer structure of the mask plate in one embodiment of this application;

[0042] Figure 6 This is a schematic diagram of the fit between the mask plate and the substrate in one embodiment of this application;

[0043] Figure 7 This is a partial structural diagram of the mask plate in another embodiment of this application;

[0044] Figure 8 This is a flowchart of a method for preparing a mask plate according to another embodiment of this application.

[0045] Marker explanation:

[0046] 100, mask plate; 200, substrate; N, first boundary;

[0047] 1. Mask body; M. Target area; 11. Half-etched area; 12. Full-thickness area; 13. Mask opening; 14. First surface; 15. Second surface; 16. Gap;

[0048] 2. Supporting structure; 21. Supporting column. Detailed Implementation

[0049] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with specific embodiments and the accompanying drawings.

[0050] It should be noted that, unless otherwise defined, the technical or scientific terms used in the embodiments of this application should have the ordinary meaning understood by one of ordinary skill in the art to which this application pertains. The terms "first," "second," and similar terms used in the embodiments of this application do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as "comprising" or "including" mean that the element or object preceding the word encompasses the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Terms such as "connected" or "linked" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. Terms such as "upper," "lower," "left," and "right" are only used to indicate relative positional relationships; when the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0051] Reference Figure 1 As shown, OLED displays typically deposit pixel layers using a vapor deposition process. During vapor deposition, the mask 100 and substrate 200 are in close contact. After vapor deposition, they separate. Since both the mask 100 and substrate 200 sag under gravity, and the sag of substrate 200 is greater than that of mask 100, the center of substrate 200 separates last from the center of mask 100 during the separation process. (Refer to...) Figure 2 As shown. Therefore, the static electricity generated during the detachment process or the static electricity accumulated by the equipment itself will concentrate at the center of the mask 100 and the substrate 200 and discharge. Since the center is often located inside the screen, it will break down the screen circuit and cause defects such as bright lines.

[0052] Based on this, this application provides a mask solution to solve the above problems.

[0053] Please refer to Figure 3-6 As shown, one embodiment of this application provides a mask 100 for depositing a film layer on a substrate 200. The mask 100 includes a mask body 1 and a support structure 2, and a mask opening 13 is provided on the mask body 1. During the evaporation process, the evaporation material can be deposited on the substrate 200 through the mask opening 13.

[0054] The support structure 2 is disposed on the side of the mask body 1 facing the substrate 200. The support structure 2 protrudes from the surface of the mask body 1 facing the substrate 200. The orthographic projection of the support structure 2 on the mask body 1 does not overlap with the orthographic projection of the mask opening 13 on the mask body 1.

[0055] The mask 100 provided in this embodiment has a support structure 2 provided on the side of the mask body 1 facing the substrate 200. The support structure 2 protrudes from the surface of the mask body 1 facing the substrate 200. The orthographic projection of the support structure 2 on the mask body 1 does not overlap with the orthographic projection of the mask opening 13 on the mask body 1. During vapor deposition, the support structure 2 contacts the substrate 200, and static electricity is released through the support structure 2, thereby avoiding static electricity damage to the circuits in the substrate 200.

[0056] Specifically, refer to Figure 5 and 6 As shown, the mask body 1 includes a first surface 14 and a second surface 15 facing away from each other. During vapor deposition, the first surface 14 is disposed close to the substrate 200 and is in contact with the substrate 200. In this embodiment, by providing a support structure 2 on the first surface 14, and by contacting the substrate 200 through the support structure 2, static electricity can be released through the support structure 2, thereby avoiding electrostatic damage to the circuits in the substrate 200.

[0057] In one embodiment, the support structure 2 is made of the same material as the mask body 1 and is integrally formed, which facilitates fabrication and improves structural strength and electrostatic discharge capability. Further, the support structure 2 can be formed by etching other areas on the mask body 1. Optionally, the support structure 2 and the mask body 1 are made of materials such as stainless steel, copper, or aluminum.

[0058] Preferably, the end of the support structure 2 furthest from the mask body 1 has a first shortest distance from the mask body 1, which is greater than or equal to 10 μm (micrometers). Since the substrate 200 surrounding the support structure 2 will sag under gravity, and the shortest distance between the end of the support structure 2 furthest from the mask body 1 and the mask body 1 is greater than or equal to 10 μm, the support structure 2 can effectively support the surrounding substrate 200, making the area where the substrate 200 is de-contacted with the mask body 1 sufficiently large, thereby protecting the circuitry in a sufficiently large area of ​​the substrate 200.

[0059] For example, the first shortest distance can be 10um, 15um, 20um, 25um, 30um, 35um, 40um, 50um, 100um, etc., and there is no specific limitation.

[0060] Reference Figure 4 As shown, in one embodiment, the mask body 1 facing the substrate 200 includes a half-etched area 11 and a full-thickness area 12. The full-thickness area 12 forms a support structure 2 after the half-etched area 11 is partially etched. Since the height of the support structure 2 is small, at the micrometer level, the height of the support structure 2 can be precisely controlled by etching.

[0061] Preferably, the half-etch depth of the half-etch region 11 is greater than or equal to 10 μm. The half-etch depth of the half-etch region 11 corresponds to the height of the support structure 2. The height of the support structure 2 is greater than or equal to 10 μm, ensuring that the support structure 2 can effectively support the substrate 200 around it.

[0062] For example, the half-etch depth of the half-etch region 11 is 10um, 15um, 20um, 25um, 30um, 35um, 40um, 50um, 100um, etc., and there is no specific limitation.

[0063] Reference Figure 3 As shown, in one embodiment, the mask plate body 1 is provided with a plurality of mask openings 13, which are arranged along a first direction (X direction in the figure) and a second direction (Y direction in the figure), and the first direction and the second direction are perpendicular. The plurality of mask openings 13 can simultaneously form patterns at corresponding positions on the substrate 200 to improve evaporation efficiency and facilitate subsequent cutting of the substrate 200.

[0064] In one embodiment, the substrate 200 includes multiple sub-substrates. The orthographic projection of the mask opening 13 on the mask body 1 lies within the orthographic projection of the corresponding sub-substrate on the mask body 1. The orthographic projection of the support structure 2 on the mask body 1 does not overlap with the orthographic projection of the sub-substrates on the mask body 1, thus preventing the support structure 2 from blocking the vapor deposition material from reaching the sub-substrates. The substrate 200 can be a display substrate, and the sub-substrates can be sub-display substrates. After the display substrate is fabricated, it can be cut to obtain multiple sub-display substrates. These sub-display substrates can form OLED displays or micro light-emitting diode (Micro LED or μLED) displays.

[0065] Reference Figure 7 As shown, in one embodiment, the orthographic projection of the sub-substrate onto the mask body 1 has a first boundary N, and the orthographic projection of the support structure 2 onto the mask body 1 has a second shortest distance between it and the first boundary N, the second shortest distance being greater than or equal to 100 μm. This is because, after vapor deposition, the substrate 200 needs to be cut into individual sub-substrates, and the second shortest distance between the orthographic projection of the support structure 2 onto the mask body 1 and the first boundary N facilitates this cutting process.

[0066] For example, the second shortest distance can be 100um, 105um, 110um, 120um, 125um, 130um, 135um, 140um, 150um, 200um, etc., and there is no specific limitation.

[0067] In one embodiment, the support structure 2 includes a plurality of support pillars 21, which are spaced apart. The plurality of support pillars 21 are spaced apart to support the substrate 200, thereby de-contacting the area on the mask body 1 surrounded by the plurality of support pillars 21 with the substrate 200, thus protecting the circuits in the area of ​​the substrate 200 surrounded by the plurality of support pillars 21.

[0068] Preferably, the area of ​​the orthographic projection of each support post 21 onto the mask plate body 1 is greater than or equal to 0.5 mm². 2 This ensures stable support for the substrate 200 and facilitates fabrication.

[0069] For example, the area of ​​the orthographic projection of each support post 21 onto the mask plate body 1 is 0.5 mm². 2 0.6mm 2 0.7mm 2 0.8mm 2 0.9mm 2 1mm 2 2mm 2 etc., without specifying the exact type.

[0070] Preferably, the shape of the orthographic projection of the support column 21 onto the mask body 1 includes one or more of the following: rectangle, circle, ellipse, trapezoid, and parallelogram. For example, the support column 21 is a cylinder, and the orthographic projection of the cylinder onto the mask body 1 is circular; or, the support column 21 is a rectangular column, and the orthographic projection of the rectangular column onto the mask body 1 is rectangular.

[0071] Please continue to refer to Figure 3-6 As shown, in one embodiment, the surface of the mask body 1 facing the substrate 200 includes a target area M. The orthographic projection of the support structure 2 on the mask body 1 lies within the orthographic projection of the target area M on the mask body 1. During vapor deposition, the support structure 2 abuts against the substrate 200 to form a gap 16 between the target area M and the substrate 200. The support structure 2 prevents the target area M from contacting the corresponding area on the substrate 200, thus protecting the sub-substrate within the corresponding area on the substrate 200 and preventing electrostatic discharge damage to the circuitry within the sub-substrate within the corresponding area on the substrate 200.

[0072] Preferably, the target area M is the region extending outward from the center of the surface of the mask body 1 facing the substrate 200. Static electricity generated during the separation of the substrate 200 from the mask 100, or static electricity accumulated within the device itself, tends to concentrate and discharge at the center of the mask 100 and substrate 200. Therefore, setting the target area M as the region extending outward from the center of the surface of the mask body 1 facing the substrate 200 avoids the concentration of static electricity at the center of the mask 100 and substrate 200, preventing damage to the center of the substrate 200. Since the center of the substrate 200 is typically located within a sub-substrate, this also prevents electrostatic discharge from damaging the circuitry within the sub-substrate.

[0073] Preferably, the orthographic projection of the substrate 200 onto the mask body 1 lies within the orthographic projection of the target region M onto the mask body 1. That is, the entire area of ​​the substrate 200 does not contact the mask body 1, but only the support structure 2, thus achieving electrostatic protection for the entire area.

[0074] Preferably, the center position of the surface of the mask plate body 1 facing the substrate 200 coincides with the center position of the target area M.

[0075] Preferably, the target area M has a rectangular, circular, or elliptical shape, etc., and there is no specific limitation.

[0076] Preferably, the surface of the mask body 1 facing the substrate 200 includes multiple target regions M, which are spaced apart. The mask 100 includes multiple support structures 2, and the orthographic projection of each support structure 2 on the mask body 1 lies within the orthographic projection of the corresponding target region M on the mask body 1, thereby protecting the sub-substrate on the substrate 200 within the region corresponding to each target region M. For example, one target region M is a region extending outward from the center of the surface of the mask body 1 facing the substrate 200, and another target region M is a region near the edge of the mask body 1.

[0077] Based on the same inventive concept, this application also discloses a method for preparing a mask, which includes the following steps:

[0078] Step S10: A support structure 2 is formed on the side of the mask body 1 facing the substrate 200; wherein the support structure 2 protrudes from the surface of the mask body 1 facing the substrate 200, and the orthographic projection of the support structure 2 on the mask body 1 does not overlap with the orthographic projection of the mask opening 13 on the mask body 1. (Refer to...) Figure 3-7 As shown.

[0079] The mask fabrication method provided in this embodiment involves providing a support structure 2 on the side of the mask body 1 facing the substrate 200. The support structure 2 protrudes from the surface of the mask body 1 facing the substrate 200. The orthographic projection of the support structure 2 on the mask body 1 does not overlap with the orthographic projection of the mask opening 13 on the mask body 1. During vapor deposition, the support structure 2 contacts the substrate 200, and static electricity is released through the support structure 2, thereby preventing electrostatic damage to the circuits in the substrate 200.

[0080] Reference Figure 8 As shown, in one embodiment, step S10, forming a support structure 2 on the side of the mask plate body 1 facing the substrate 200, includes:

[0081] Step S11: Divide the mask body 1 into a half-etched area 11 and a full-thickness area 12 on the side facing the substrate 200; wherein the orthographic projection of the full-thickness area 12 on the mask body 1 does not overlap with the orthographic projection of the mask opening 13 on the mask body 1; refer to Figure 4 As shown.

[0082] Step S12: Perform half-etching on the half-etched area 11, and the full-thickness area 12 forms the support structure 2 after the half-etched area 11 is half-etched.

[0083] Preferably, the method for preparing the mask plate 100 further includes the following steps:

[0084] S20. A mask opening 13 is formed on the mask plate body 1. Optionally, the mask opening 13 is formed by etching.

[0085] Step S20 can be performed before step S10; or after step S10; or simultaneously with step S10, that is, simultaneously etching to form the mask opening 13 and the support structure 2.

[0086] The specific structure and materials of the mask 100 prepared in the mask preparation method of this embodiment are the same as those in the above mask embodiment, and will not be repeated here.

[0087] Another embodiment of this application discloses a masking apparatus, which includes a frame and a mask plate 100 as described in the above embodiments. The mask plate 100 can be any of the mask plates 100 described in the above embodiments. Since the vapor deposition apparatus provided in this embodiment includes the mask plate 100 provided in any of the above embodiments, the masking apparatus provided in this embodiment has the beneficial effects of the mask plate 100 provided in any of the above embodiments, which will not be repeated here.

[0088] Although this application has been described in conjunction with specific embodiments thereof, many substitutions, modifications and variations of these embodiments will be apparent to those skilled in the art from the foregoing description.

[0089] It should be noted that the above description describes some embodiments of this application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in a different order than that shown in the above embodiments and still achieve the desired result. Furthermore, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired result. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0090] The embodiments of this application are intended to cover all such substitutions, modifications, and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the embodiments of this application should be included within the protection scope of this application.

Claims

1. A mask plate for evaporating a film layer on a substrate, characterized by, The mask plate comprises: A mask plate body, wherein a mask opening is arranged on the mask plate body; A support structure is arranged on a side of the mask plate body facing the substrate, the support structure protrudes from a surface of the mask plate body facing the substrate, and a normal projection of the support structure on the mask plate body does not overlap with a normal projection of the mask opening on the mask plate body; A plurality of mask openings are arranged on the mask plate body, and the plurality of mask openings are arranged along a first direction and a second direction, wherein the first direction and the second direction are perpendicular to each other; The substrate comprises a plurality of sub-boards, a normal projection of the mask opening on the mask plate body is located within a normal projection of the corresponding sub-board on the mask plate body, and a normal projection of the support structure on the mask plate body does not overlap with a normal projection of the sub-board on the mask plate body; A surface of the mask plate body facing the substrate comprises a target area, a normal projection of the support structure on the mask plate body is located within a normal projection of the target area on the mask plate body, and the support structure abuts against the substrate during evaporation to form a gap between the target area and the substrate.

2. The mask defined in claim 1, wherein The support structure is made of the same material as the mask plate body and is integrally formed.

3. The mask defined in claim 2, wherein An end of the support structure away from the mask plate body has a first minimum distance from the mask plate body, and the first minimum distance is greater than or equal to 10 um.

4. The mask defined in claim 2, wherein A side of the mask plate body facing the substrate comprises a half-etching area and a full-thickness area, and the full-thickness area forms the support structure after half-etching of the half-etching area.

5. The mask of claim 4, wherein, The half-etching depth of the half-etching area is greater than or equal to 10 um.

6. The mask defined in claim 1, wherein A normal projection of the sub-board on the mask plate body has a first boundary, and a second minimum distance between a normal projection of the support structure on the mask plate body and the first boundary is greater than or equal to 100 um.

7. The mask of claim 1, wherein, The support structure comprises a plurality of support columns, and the plurality of support columns are arranged at intervals.

8. The mask defined in claim 7, wherein The area of the orthographic projection of each of the support columns on the mask plate body is greater than or equal to 0.5 mm 2 .

9. The mask of claim 7, wherein, A shape of a normal projection of the support column on the mask plate body comprises one or more of a rectangle, a circle, an ellipse, a trapezoid, and a parallelogram.

10. The mask of claim 1, wherein, The target area is an area formed by expanding outward from a center position of the surface of the mask plate body facing the substrate.

11. The mask defined in claim 1 wherein, A normal projection of the substrate on the mask plate body is located within a normal projection of the target area on the mask plate body.

12. The mask defined in claim 1 wherein, The center position of the surface of the mask plate body facing the substrate coincides with the center position of the target area.

13. The mask of claim 1, wherein, The shape of the target area is a rectangle, a circle, or an ellipse.

14. The mask of claim 1, wherein, The surface of the mask plate body facing the substrate comprises a plurality of target areas, and the plurality of target areas are arranged at intervals, the mask plate comprises a plurality of support structures, and a normal projection of each support structure on the mask plate body is located within a normal projection of the corresponding target area on the mask plate body.

15. A method for producing a mask for producing a mask according to any one of claims 1 to 14, characterized in that Comprise: A support structure is formed on the side of the mask plate body facing the substrate; wherein the support structure protrudes from the surface of the mask plate body facing the substrate, and the orthographic projection of the support structure on the mask plate body does not overlap with the orthographic projection of the mask opening on the mask plate body.

16. The method of claim 15, wherein the mask plate is prepared by a method comprising: The support structure is formed on the side of the mask plate body facing the substrate, comprising: The side of the mask plate body facing the substrate is divided into a half-thickness area and a full-thickness area; wherein the orthographic projection of the full-thickness area on the mask plate body does not overlap with the orthographic projection of the mask opening on the mask plate body; The half-thickness area is subjected to half-etching, and the full-thickness area forms the support structure after the half-etching of the half-thickness area.

17. The method of claim 16, wherein the mask plate is prepared by, Before the support structure is formed on the side of the mask plate body facing the substrate; or after the support structure is formed on the side of the mask plate body facing the substrate; Or, at the same time when the support structure is formed on the side of the mask plate body facing the substrate, the mask plate manufacturing method further comprises: A mask opening is formed on the mask plate body.

18. A masking device, characterized by Comprise: A frame; And the mask plate as claimed in any one of claims 1-14, wherein the mask plate is arranged in the frame.

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