Vacuum magnetron sputtering device and method for low-temperature low-loss silicon-based organic light-emitting diode

Abstract

The invention relates to a low-temperature low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device and method, and belongs to the technical field of vacuum coating equipment. The vacuum magnetron sputtering device comprises three cathodes which are sequentially connected, a low-damage sputtering cavity is formed among the three cathodes, and each cathode comprises a cathode baffle, a target material and a magnetic pole; the vacuum magnetron sputtering device further comprises a mask plate and a wafer clamp. Wherein the mask plates are arranged at the front end of the wafer, the shape and size of the mask plates are matched with those of the electronic elements, and the number of the mask plates is in one-to-one correspondence with those of the electronic elements. The three-face targeting technology is adopted, the sputtering deposition rate is controlled by adjusting the cathode target material power and the plasma gas flux, the targeting distance is adjusted and controlled, direct bombardment on the electronic element is avoided, and therefore surface damage of the electronic element is reduced to the maximum extent; meanwhile, a cooling system behind the wafer can reduce the temperature of the wafer in the sputtering process; therefore, the low-temperature low-loss vacuum sputtering deposition process of the silicon-based organic light-emitting diode wafer is realized.

Description

Technical Field

[0001] The present application relates to the technical field of vacuum coating equipment, and in particular to a low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device and method. Background Art

[0002] With the rapid development of modern display technology, Micro-OLED (silicon-based organic light-emitting diode) has gradually become an important choice in the field of high-end display applications due to its excellent display performance and high power efficiency. One of the core technologies of Micro-OLED is the preparation of transparent conductive oxide (TCO) electrodes. TCO materials not only need to have excellent conductivity and transparency, but also good chemical stability and thermal stability. Among these preparation methods, magnetron sputtering technology is widely used because it can efficiently and uniformly deposit thin film materials. In Micro-OLED, commonly used materials for TCO electrodes include indium tin oxide (ITO), indium zinc oxide (IZO) and indium tin oxide (ITO). The combination of transparency and conductivity of these materials makes them an important part of Micro-OLED. In addition to excellent optical and electrical properties, TCO electrodes also need to meet the following requirements: 1. High transmittance: Since the working principle of Micro-OLED depends on the luminous efficiency of organic light-emitting materials, TCO electrodes must have high transmittance, especially in the visible light band. 2. Low resistivity: To ensure effective distribution of current, TCO electrodes need to have low resistivity to minimize energy loss. 3. Good chemical and thermal stability: During the manufacturing process of Micro-OLED, electrodes may be exposed to complex chemical environments, so TCO electrodes need to have good corrosion resistance and be able to withstand high temperature treatment.

[0003] Magnetron sputtering is a physical vapor deposition (PVD) technology widely used in thin film deposition. Its basic principle is to bombard the target material with high-energy argon atoms in a low-pressure atmosphere, so that the target atoms escape and deposit on the substrate surface to form a thin film. The advantages of magnetron sputtering are its high deposition rate, good film uniformity, strong adhesion, and it is suitable for large-area deposition. In recent years, with the continuous development of materials science and nanotechnology, the technology of preparing TCO electrodes by magnetron sputtering has gradually matured. Researchers have made significant progress in optimizing sputtering parameters (such as gas pressure, power, substrate temperature, etc.), which can better control the thickness, composition and microstructure of the film. In the market, many companies have begun to realize the large-scale production of TCO electrodes, especially in consumer electronic products such as smartphones and tablets, the demand for Micro-OLED displays has become increasingly strong. In addition to traditional ITO, researchers have begun to pay attention to high-performance alternative materials, such as zinc-based oxides and steel cobalt oxides, especially in high-temperature and low-temperature applications. Although magnetron sputtering technology has obvious advantages in the preparation of TCO electrodes, it still faces some challenges in practical applications. In many cases, in order to improve the crystallization quality of the film, the deposition process requires high temperature operation. However, the organic materials of Micro-OLED devices are extremely sensitive to high temperatures, so a low-temperature deposition solution is needed. During the deposition process of the film, bubbles, defects and poor interlayer bonding are easily formed, which directly affects the TCO electrode performance and the overall display effect of Micro-OLED.

[0004] In order to achieve low-temperature and low-loss magnetron sputtering without sacrificing film quality, researchers can adopt the following strategies: Optimize sputtering gas composition and pressure: By adjusting the ratio of argon and oxygen and setting a suitable working pressure, the deposition temperature can be effectively reduced and the film effect can be enhanced. Use targets that improve sputtering efficiency: Study new target materials, such as multi-element alloy targets, to improve the sputtering efficiency of materials and reduce the energy and temperature required for deposition. Substrate pretreatment and post-treatment: Optimizing the substrate before deposition, such as cleaning and heating, can improve the adhesion and quality of the film. At the same time, annealing after deposition can improve the electrical and optical properties of the film. Use cyclic deposition technology: Through intermittent deposition and alternating deposition techniques, the uniformity and density of the film can be further improved, thereby achieving better film quality at a lower temperature. In summary, magnetron sputtering has broad research prospects and application potential in the preparation of TCO electrodes in Micro-OLEDs. Although there are some technical challenges at present, by continuously optimizing the deposition process and material combination, it is expected to achieve low-temperature and low-loss thin-film deposition, laying a solid foundation for the commercial application of Micro-OLED. Summary of the invention

[0005] In view of this, the present application provides a low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device and method to solve the technical problems raised by the background technology.

[0006] In a first aspect, the present application provides a low-temperature, low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device, the vacuum magnetron sputtering device comprising three cathodes connected in sequence, and a low-damage sputtering cavity is formed between the three cathodes, each of the cathodes comprising a cathode baffle, a target material and a magnetic pole;

[0007] The cathode is a hollow structure, and the cathode baffle faces the target surface; the target material is located in the sputtering chamber and is arranged on the target surface of the cathode; the magnetic poles are arranged inside the cathode, and the magnetic properties of the three magnetic poles in the cathode are opposite to each other to form an electron deflection magnetic field;

[0008] The vacuum magnetron sputtering device also includes a mask plate, a wafer fixture and a wafer cooling water channel;

[0009] The rear of the wafer fixture is hollow and contains cooling water channels, which provide real-time cooling during the sputtering process of the Micro-OLED wafer.

[0010] The mask plate is arranged at the front end of the wafer fixture, and the shape and size of the mask plate are adapted to the Micro-OLED wafer and the quantity thereof corresponds one to one.

[0011] Preferably, the three cathodes are all cubic hollow structures, and the three cathodes are fixedly connected in sequence along their edges, and a grounded cathode baffle is arranged on the upper portion of the target material to reduce sputtering damage to the Micro-OLED wafer by conducting away excess electrons.

[0012] Preferably, the target material is a transparent conductive oxide TCO; and the Micro-OLED wafer is a silicon-based organic light-emitting diode wafer.

[0013] Preferably, the vacuum magnetron sputtering device further comprises a wafer clamp having a card slot, and the silicon-based organic light-emitting diode wafer is placed on the wafer clamp for clamping and fixing, so as to facilitate the delivery and transfer of the Micro-OLED wafer.

[0014] Preferably, the vacuum magnetron sputtering device also includes a positioning system, which adopts a CCD optical alignment method to accurately align the mask plate and the wafer clamp through the wafer Notch, ensure that the mask plate, wafer clamp and wafer cooling water channel are three-dimensionally aligned, and then lock the three into a coplanar state to ensure that the rotation of the transmission system during the sputtering process will not affect the inclination or offset of the three planes.

[0015] Preferably, the vacuum magnetron sputtering device also includes a transmission system, which is arranged on the upper part of the alignment system. The alignment system is driven by a motor to rotate clockwise or counterclockwise as a whole, and the silicon-based organic light-emitting diode wafer and the mask plate rotate around the axis under the drive of the transmission system.

[0016] Preferably, the vacuum magnetron sputtering device also includes a cathode cooling water circuit and a cathode gas supply system (plasma process gas circuit). The cathode cooling water circuit is arranged at the rear of the cathode, and cooling water is used to flow through the hollow structure of the cathode to cool the cathode. The gas supply system is arranged at the rear of the cathode, and provides plasma process gas for sputtering through the gas circuit.

[0017] Preferably, the vacuum magnetron sputtering device further comprises an exhaust system, and the exhaust system exhausts the sputtering chamber to achieve a target vacuum degree; wherein the exhaust system comprises a baffle, a gate valve, a dry pump and a molecular pump.

[0018] The second aspect of the present application also provides a low-temperature deposition vacuum magnetron sputtering coating method implemented according to the above-mentioned device, comprising the following steps:

[0019] S1. Before the sputtering starts, the sputtering chamber is evacuated by the exhaust system, and the vacuum degree of the sputtering chamber is reduced to less than 10 -5 Pa; when the vacuum degree of the sputtering chamber is consistent with that of the external transfer chamber, the connecting valves of the two chambers are opened, and the wafer fixture with the silicon-based organic light-emitting diode wafer fixed is transferred into the sputtering chamber by a mechanical arm, and then the connecting valve is closed; and then the mask plate and the wafer fixture are aligned and locked by the alignment system;

[0020] S2. During the sputtering process, the gas supply system is turned on, and the gas supply flux and the sputtering chamber pressure are adjusted at the same time to ensure the normal generation of plasma glow discharge phenomenon; the three-sided target technology is adopted to adjust the distance between the three target cathodes and the magnetic field strength range to ensure that the plasma ranges of the three target cathodes overlap, and the impact and damage to the silicon-based organic light-emitting diode wafer are reduced through continuous particle collisions; the sputtering rate is adjusted by adjusting the cathode bias and power, and the transmission system is turned on to start slow rotation, and the uniform cathode sputtering rate and the uniform rotation rate of the transmission system are used to ensure the flatness and density of the TCO film; the distance between the three-sided target cathode and the wafer fixture is adjusted to reduce the impact and damage of particle sputtering on the Micro-OLED wafer by regulating the mean free path of the sputtered particles; the wafer cooling water path is turned on to ensure that the surface temperature of the Micro-OLED wafer is fully reduced during the sputtering process, while maintaining its surface temperature at 40-60°C;

[0021] S3, after the sputtering is completed, the gas supply system and the cathode power supply are turned off, the plasma glow discharge is stopped, the two connecting valves are opened, and the wafer fixture holding the sputtered silicon-based organic light-emitting diode wafer is transferred out of the sputtering chamber.

[0022] Compared with the prior art, this application has the following beneficial effects:

[0023] This application adopts three-sided target technology, controls the sputtering deposition rate by adjusting the cathode power and plasma gas flux, and adjusts the target distance to avoid direct bombardment of the Micro-OLED wafer, thereby minimizing the damage to the Micro-OLED surface; at the same time, the cooling system can reduce the temperature of the Micro-OLED wafer during the sputtering process; thus, a low-temperature and low-loss vacuum sputtering deposition process for silicon-based organic light-emitting diode wafers is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions in the present application or the prior art, the drawings required for use in the description of the application or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0025] Figure 1 This is a perspective diagram of the three-dimensional structure of a low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device of the present application;

[0026] Figure 2 This is a schematic side view of the three-dimensional structure of a low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device of the present application;

[0027] Figure 3 This is a schematic diagram of the wafer alignment system and transmission system of this application.

[0028] Description of reference numerals:

[0029] 100, cathode; 110, cathode baffle; 120, target; 130, magnetic pole; 140, cathode cooling water circuit; 150, cathode gas supply system;

[0030] 200, alignment system; 210, mask plate; 220, wafer clamp; 230, wafer cooling water circuit; 240, transmission system; 300, exhaust system. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0032] First, those skilled in the art should understand that these implementations are only used to explain the technical principles of the present application and are not intended to limit the scope of protection of the present application. Those skilled in the art can make adjustments to them as needed to adapt to specific application scenarios.

[0033] Secondly, it should be noted that in the description of the present application, terms such as "up", "down", "left", "right", "front", "back", "inside" and "outside" indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings. This is merely for the convenience of description and does not indicate or imply that the device or component must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on the present application.

[0034] Example 1

[0035] like Figure 1-3 As shown, an embodiment of the present application provides a low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device, the vacuum magnetron sputtering device includes three cathodes connected in sequence, and a low-damage sputtering cavity is formed between the three cathodes, each cathode 100 includes a cathode baffle 110, a target material 120 and a magnetic pole 130.

[0036] The cathode 100 is a hollow structure, and the cathode baffle 110 faces the target surface; the target material 120 is located in the sputtering chamber and is arranged on the target surface of the cathode 100; the magnetic pole 130 is arranged inside the cathode 100, and the magnetic properties of the three magnetic poles 130 in the cathode are opposite to each other to form an electron deflection magnetic field;

[0037] The vacuum magnetron sputtering device also includes an alignment system 200, a mask plate 210, a wafer fixture 220, a wafer cooling water channel 230 and a transmission system 240. The rear of the wafer fixture 220 is hollow and contains a cooling water channel 230 inside, which performs real-time cooling during the sputtering process of the Micro-OLED wafer. The upper part of the wafer fixture is connected to the transmission system 240, and the uniformity of the sputtered film is ensured by rotation during the sputtering process;

[0038] The mask plate 210 is disposed at the front end of the wafer fixture 220 , and the shape and size of the mask plate 210 are adapted to the Micro-OLED and the quantity thereof corresponds one to one.

[0039] In the low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device provided in the embodiment of the present application, in order to solve the key technical problems of low-temperature and low-loss sputtering of TCO electrodes, a three-sided target technology is adopted. The sputtering deposition rate is controlled by adjusting the cathode power and the plasma gas flux, and the distance between the target cathode is regulated to avoid direct bombardment of the Micro-OLED, thereby minimizing the damage to the Micro-OLED surface; at the same time, the cooling system can reduce the temperature of the Micro-OLED wafer during the sputtering process; thereby realizing a low-temperature and low-loss vacuum sputtering deposition process for the silicon-based organic light-emitting diode wafer.

[0040] Furthermore, three cathodes are provided, all of which are cubic hollow structures, and the three cathodes are fixedly connected in sequence along their edges, and a grounded cathode baffle 110 is provided on the upper portion of the target material to reduce sputtering damage to the Micro-OLED wafer by conducting away excess electrons.

[0041] Furthermore, the target material 120 is a transparent conductive oxide TCO; and the Micro-OLED wafer is a silicon-based organic light-emitting diode wafer.

[0042] In a specific embodiment, the transparent conductive oxide TCO may be IZO.

[0043] Furthermore, the vacuum magnetron sputtering device also includes a wafer clamp 220, which has a card slot. The silicon-based organic light-emitting diode wafer is placed on the wafer clamp 220 for clamping and fixing, which facilitates the delivery and transfer of the Micro-OLED wafer.

[0044] Furthermore, the vacuum magnetron sputtering device also includes a positioning system 200, which adopts a CCD optical alignment method to accurately align the mask plate 210 and the wafer clamp 220 through the wafer Notch, ensure that the mask plate 210, the wafer clamp 220 and the wafer cooling water channel 230 are three-dimensionally aligned, and then lock the three into a coplanar state to ensure that the rotation of the transmission system 240 during the sputtering process will not affect the inclination or offset of the three planes.

[0045] Furthermore, the vacuum magnetron sputtering device also includes a transmission system 240, which is arranged on the upper part of the alignment system 200, and the alignment system 200 is driven by a motor to rotate clockwise or counterclockwise as a whole, and the silicon-based organic light-emitting diode wafer and the mask plate 210 are driven by the transmission system 240 to rotate around the axis.

[0046] Furthermore, the vacuum magnetron sputtering device also includes a cathode cooling water circuit 140 and a cathode gas supply system 150 (plasma process gas circuit). The cathode cooling system 140 is arranged at the rear of the cathode, and uses cooling water to flow through the hollow structure of the cathode to cool the cathode. The gas supply system 150 is arranged at the rear of the cathode, and provides plasma process gas for sputtering through the gas circuit.

[0047] Furthermore, the vacuum magnetron sputtering device also includes an exhaust system 300, which exhausts the sputtering chamber to achieve a target vacuum degree; wherein the exhaust system 300 includes a baffle, a gate valve, a dry pump and a molecular pump.

[0048] Example 2

[0049] The present application embodiment provides a low-temperature deposition vacuum magnetron sputtering coating method implemented according to the device in embodiment 1, comprising the following steps:

[0050] S1. Before the sputtering starts, the sputtering chamber is evacuated by the exhaust system 300, and the vacuum degree of the sputtering chamber is reduced to less than 10 -5 Pa; when the vacuum degree of the sputtering chamber is consistent with that of the external transfer chamber, the connecting valves of the two chambers are opened, and the wafer fixture 220 with the silicon-based organic light-emitting diode wafer fixed thereon is transferred into the sputtering chamber by a robotic arm, and then the connecting valve is closed; and then the mask plate 210 and the wafer fixture 220 are aligned and locked by the alignment system 200;

[0051] S2. During the sputtering process, the gas supply system 150 is turned on, and the gas supply flux and the sputtering chamber pressure are adjusted at the same time to ensure the normal generation of plasma glow discharge phenomenon; the three-sided target technology is adopted to adjust the distance and magnetic field intensity range between the three target cathodes 100 to ensure that the plasma ranges of the three target cathodes 100 overlap, and the impact and damage to the silicon-based organic light-emitting diode wafer are reduced through continuous particle collisions; the sputtering rate is adjusted by adjusting the cathode bias and power, and the transmission system 240 is turned on to start slow rotation, and the uniform cathode sputtering rate and the uniform rotation rate of the transmission system 240 are used to ensure the flatness and density of the TCO film; the distance between the three-sided target cathode 100 and the wafer clamp 220 is adjusted, and the impact and damage of particle sputtering on the Micro-OLED wafer are reduced by regulating the mean free path of the sputtered particles; the wafer cooling water path 230 is turned on to ensure that the surface temperature of the Micro-OLED wafer is fully reduced during the sputtering process, and its surface temperature is maintained at 40-60°C;

[0052] S3, after the sputtering is completed, the gas supply system 150 and the cathode power supply are turned off, the plasma glow discharge is stopped, the two connecting valves are opened, and the wafer fixture 220 holding the silicon-based organic light-emitting diode wafer after sputtering coating is transferred out of the sputtering chamber.

[0053] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device, characterized in that: The vacuum magnetron sputtering device comprises three cathodes (100) connected in sequence, and a low-damage sputtering cavity is formed between the three cathodes (100), and each cathode (100) comprises a cathode baffle (110), a target material (120) and a magnetic pole (130); The cathode (100) is a hollow structure, and the cathode baffle (110) faces the target surface; the target material (120) is located in the sputtering chamber and is arranged on the target surface of the cathode (100); the magnetic pole (130) is arranged inside the cathode (100), and the magnetic properties of the three magnetic poles (130) in the cathode (100) are opposite to each other to form an electron deflection magnetic field; The vacuum magnetron sputtering device also includes a mask plate (210), a wafer clamp (220) and a wafer cooling water channel (230); The rear portion of the wafer clamp (220) is hollow and contains a cooling water channel (230) inside, which performs real-time cooling during the sputtering process of the Micro-OLED wafer; The mask plate (210) is arranged at the front end of the wafer clamp (220), and the shape and size of the mask plate (210) are adapted to the Micro-OLED wafer and the number of the mask plates corresponds one to one.

2. The low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device according to claim 1, characterized in that: The three cathodes (100) are all cubic hollow structures, and the three cathodes (100) are fixedly connected in sequence along their edges, and a grounded cathode baffle (110) is arranged on the upper surface of the target material.

3. The low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device according to claim 2, characterized in that: The target material (120) is a transparent conductive oxide TCO; and the Micro-OLED wafer is a silicon-based organic light-emitting diode wafer.

4. The low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device according to claim 3, characterized in that: The vacuum magnetron sputtering device also includes a wafer clamp (220), wherein the wafer clamp (220) has a clamping slot, and the silicon-based organic light-emitting diode wafer is placed on the wafer clamp (220) for clamping and fixing, thereby facilitating the delivery and transfer of the Micro-OLED wafer.

5. The low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device according to claim 4, characterized in that: The vacuum magnetron sputtering device further comprises an alignment system (200), wherein the alignment system (200) adopts a CCD optical alignment method to accurately align the mask plate (210) and the wafer clamp (220) through a wafer notch, thereby ensuring that the mask plate (210), the wafer clamp (220) and the wafer cooling water channel (230) are three-dimensionally aligned and then locked in a coplanar manner.

6. The low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device according to claim 5, characterized in that: The vacuum magnetron sputtering device further comprises a transmission system (240), wherein the transmission system (240) is arranged on the upper part of the alignment system (200), and the motor drives the alignment system (200) to rotate clockwise or counterclockwise as a whole, and the silicon-based organic light-emitting diode wafer and the mask plate (210) rotate around the axis under the drive of the transmission system (240).

7. The low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device according to claim 6, characterized in that: The vacuum magnetron sputtering device also includes a cathode cooling water circuit (140) and a cathode gas supply system (150). The cathode cooling water circuit (140) is arranged at the rear of the cathode and uses cooling water to flow through the cathode hollow structure to cool the cathode. The gas supply system (150) is arranged at the rear of the cathode and provides sputtering plasma process gas through the gas circuit.

8. The low-temperature and low-loss silicon-based organic light-emitting diode vacuum magnetron sputtering device according to claim 7, characterized in that: The vacuum magnetron sputtering device further comprises an exhaust system (300), wherein the exhaust system (300) exhausts the sputtering chamber to achieve a target vacuum degree; wherein the exhaust system (300) comprises a baffle, a gate valve, a dry pump and a molecular pump.

9. The device according to claim 8 implements a low-temperature deposition vacuum magnetron sputtering coating method, characterized in that: The following steps are involved: S1. Before the sputtering starts, the sputtering chamber is evacuated by the exhaust system (300), and the vacuum degree of the sputtering chamber is reduced to less than 10 -5 Pa; when the vacuum degree of the sputtering chamber is consistent with that of the external transfer chamber, the connecting valves of the two chambers are opened, a mechanical arm is used to transfer a wafer clamp (220) that fixes a silicon-based organic light-emitting diode wafer into the sputtering chamber, and then the connecting valve is closed; and then the mask plate (210) and the wafer clamp (220) are aligned and locked using the alignment system (200); S2. During the sputtering process, the gas supply system (150) is turned on, and the gas supply flux and the sputtering chamber pressure are adjusted at the same time to ensure that the plasma glow discharge phenomenon is normally generated; a three-sided target technology is used to adjust the distance between the three target cathodes (100) and the magnetic field intensity range to ensure that the plasma ranges of the three target cathodes (100) overlap, and the impact and damage to the silicon-based organic light-emitting diode wafer are reduced through continuous particle collisions; the sputtering rate is adjusted by adjusting the cathode bias and power, and the transmission system (240) is turned on to start slow sputtering. Slow rotation, uniform cathode sputtering rate and uniform rotation rate of the transmission system (240) to ensure the flatness and density of TCO film formation; adjusting the distance between the three-sided target cathode (100) and the wafer clamp (220) to reduce the impact and damage of particle sputtering on the Micro-OLED wafer by regulating the mean free path of sputtered particles; opening the wafer cooling water path (230) to ensure that the surface temperature of the Micro-OLED wafer is fully reduced during the sputtering process, while maintaining its surface temperature at 40-60°C; S3, after the sputtering is completed, the gas supply system (150) and the cathode power supply are turned off, the plasma glow discharge is stopped, the two connecting valves are opened, and the wafer clamp (220) holding the silicon-based organic light-emitting diode wafer after the sputtering coating is transferred out of the sputtering chamber.

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