Process chamber and semiconductor process equipment

Abstract

The invention discloses a process chamber and semiconductor process equipment, the process chamber comprises a chamber body, the top of the chamber body is provided with a first air inlet hole, and the bottom of the chamber body is provided with a first air outlet hole; the substrate carrying table is arranged at the bottom in the chamber body and is used for carrying a wafer; the quartz ring is arranged at the bottom in the cavity body and surrounds the substrate carrying table, the diameter of the quartz ring is gradually reduced from top to bottom, and the height of the quartz ring is basically equal to that of the substrate carrying table. The diameter of the quartz ring is gradually reduced from top to bottom, so that the path of the airflow is changed, the vortex at the top of the quartz ring disappears, the airflow in the process chamber is more stable and uniform, the film thickness is more uniform, and the consistency of the product quality is improved.

Description

Technical Field

[0001] The present application relates to the field of micro-machining technology, and in particular to a process chamber and semiconductor process equipment. Background Art

[0002] Microwave plasma chemical vapor deposition is a technology that uses microwave plasma to decompose chemical gas precursors in a low-pressure environment to deposit thin films on the surface of the substrate. It can be used to deposit high-quality diamond films, carbon nanotubes, graphene and other films. In microwave plasma chemical vapor deposition equipment, the structural design in the process chamber is the core technology of the equipment, which directly affects the progress and use of the later processes.

[0003] The process chamber is mainly composed of a chamber body, a substrate stage and a quartz ring arranged in the chamber body. The wafer is placed on the substrate stage, and the quartz ring is arranged around the substrate stage to increase the plasma concentration above the wafer and improve the deposition efficiency. When depositing thin films in existing process chambers, uneven film thickness may occur, resulting in poor product quality consistency. Summary of the invention

[0004] In response to the above technical problems, the present application provides a process chamber and semiconductor process equipment, which can improve the problem of uneven film thickness and poor product quality consistency that may occur in existing process chambers during thin film deposition.

[0005] In order to solve the above technical problems, in a first aspect, an embodiment of the present application provides a process chamber, comprising: The chamber body has a first air inlet at the top and a first air outlet at the bottom; A substrate carrier, arranged at the bottom of the chamber body, for carrying a wafer; A quartz ring is arranged at the bottom of the chamber body and surrounds the substrate stage. The diameter of the quartz ring gradually decreases from top to bottom, and the height of the quartz ring is substantially equal to the height of the substrate stage.

[0006] Optionally, the longitudinal cross-section of the quartz ring is an isosceles trapezoid, and the angle between the waist and the vertical direction is 10-20°.

[0007] Optionally, a limiting structure is provided on the inner side surface of the bottom of the chamber body for limiting the quartz ring.

[0008] Optionally, the limiting structure is a first annular groove arranged on the inner side of the bottom of the chamber body.

[0009] Optionally, the limiting structure includes an arc-shaped step arranged on the inner side surface of the bottom of the chamber body, the arc-shaped step is equal to the bottom radius of the quartz ring, and the central angle of the arc-shaped step is less than 90°; The quartz ring is arranged against the arc-shaped step to perform position limiting.

[0010] Optionally, the limiting structure further comprises a convex strip arranged on the inner side surface of the bottom of the chamber body, the convex strip extends radially along the circle where the arc-shaped step is located, and the arc-shaped step is symmetrical about the convex strip; The bottom of the quartz ring is provided with a first notch matched with the convex strip, and the quartz ring slides along the convex strip and abuts against the arc-shaped step.

[0011] Optionally, the chamber body comprises: The bottom plate has a second annular groove on the top surface, the first air outlet is arranged at the bottom of the second annular groove, a first boss is formed at the center of the second annular groove; the substrate carrier is arranged on the first boss; An air sealing plate is arranged on the top surface of the bottom plate and covers the second annular groove to form a first annular air cavity. A circular hollow portion is arranged at the center of the air sealing plate to avoid the substrate carrier. A second air inlet hole communicating with the first annular air cavity is arranged on the air sealing plate. The limiting structure is arranged on the air sealing plate. The upper cover assembly is arranged on the bottom plate to enclose a closed space with the bottom plate, and the first air inlet is arranged on the upper cover assembly.

[0012] Optionally, a plurality of the second air inlet holes are provided and are evenly distributed along the circumference of the circular hollow portion; The edge of the first boss is provided with a second notch which is in one-to-one correspondence with the second air inlet hole, and the second notch is in communication with the first annular air cavity.

[0013] Optionally, a gas filter is provided in the second notch, one end of the gas filter is communicated with the second air inlet hole, and the other end of the gas filter is communicated with the first annular air cavity.

[0014] Optionally, the upper cover assembly includes: The cover body has an annular step on its outer side wall; An air-leveling ring, wherein a third annular groove is provided on the inner side of the bottom, the air-leveling ring is sleeved on the outer side of the outer wall and supported on the annular step so that the third annular groove forms a second annular air cavity, and the first air inlet hole is provided on the air-leveling ring; The side wall of the cover body is also provided with a through hole communicating with the second annular air cavity.

[0015] In a second aspect, the present application also provides a semiconductor process equipment, including the process chamber described in the above embodiments.

[0016] As described above, the process chamber of the present application may include: a chamber body, a substrate carrier and a quartz ring. A first air inlet is provided at the top of the chamber body, and a first air outlet is provided at the bottom. The substrate carrier is arranged at the bottom of the chamber body, and the quartz ring is arranged at the bottom of the chamber body, and is arranged around the substrate carrier, and the diameter of the quartz ring gradually decreases from top to bottom. When the process is carried out, the process gas is introduced into the interior of the chamber body through the first air inlet at the top of the chamber body. After entering, the process gas is dissociated into plasma, and then reacts and deposits on the wafer to form a thin film, and the gas inside the chamber body is discharged through the first air outlet at the bottom. Since the diameter of the quartz ring gradually decreases from top to bottom, the path of the airflow is changed, so that the vortex at the top of the quartz ring disappears, and the airflow in the process chamber is more stable and uniform, so that the film thickness can be more uniform, and the consistency of product quality is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The drawings herein are incorporated into the specification and constitute a part of the specification, illustrate embodiments consistent with the present application, and are used together with the specification to explain the principles of the present application. In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor.

[0018] Figure 1 It is a structural schematic diagram of a process chamber of the related technology; Figure 2 yes Figure 1 A simulation diagram of a process chamber for performing a process; Figure 3 It is a schematic diagram of a three-dimensional structure from a top perspective of a process chamber provided in an embodiment of the present application; Figure 4 yes Figure 3 A schematic diagram of a three-dimensional structure from the bottom perspective of a process chamber; Figure 5 is a schematic diagram of a top view of a process chamber provided in an embodiment of the present application; Figure 6 is along Figure 5 Schematic diagram of the cross-sectional structure along the AA line; Figure 7 yes Figure 6 A simulation diagram of a process chamber for performing a process; Figure 8 It is a schematic structural diagram of the bottom inner side of a process chamber provided in an embodiment of the present application; Fig. 9 is a schematic diagram of the structure of the bottom inner side of another process chamber provided in an embodiment of the present application; Fig.10 It is a schematic diagram of an explosion structure of a process chamber provided in an embodiment of the present application; Fig.11 is along Figure 5 Schematic diagram of the cross-sectional structure along the middle BB line; Fig.12 This is a schematic diagram of the cooperation between a base plate and a gas filter provided in an embodiment of the present application; Fig.13 yes Fig.12 A schematic diagram of the enlarged structure of part A; Fig.14 It is a schematic diagram of the upward structure of an air-uniform ring provided in an embodiment of the present application.

[0019] The realization of the purpose, functional features and advantages of this application will be further described in conjunction with the embodiments and with reference to the accompanying drawings. The above-mentioned drawings have shown clear embodiments of this application, which will be described in more detail later. These drawings and textual descriptions are not intended to limit the scope of the concept of this application in any way, but to illustrate the concept of this application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0020] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0021] See also Figure 1 , Figure 1 It is a structural schematic diagram of a process chamber of the related art. The process chamber is mainly composed of a chamber body 10a, a substrate stage 20a and a quartz ring 30a arranged in the chamber body 10a. The wafer is carried on the substrate stage 20a, and the quartz ring 30a is arranged around the substrate stage 20a. The gas enters from the top of the chamber body 10a and flows out from the bottom of the chamber body 10a. The quartz ring 30a can increase the plasma concentration above the wafer and improve the deposition efficiency. When performing thin film deposition in the existing process chamber, uneven film thickness may occur, and the product quality consistency is poor.

[0022] The applicant has conducted research and analysis on this issue, please refer to Figure 2 , Figure 2 yes Figure 1Simulation diagram of the process chamber. The gas enters the process chamber from the top and exits from the two outlet holes at the bottom (can be combined with Figure 4 ) flows out, and the arrows in the figure and the lines inside the process chamber are all simulation diagrams of the path lines of the gas flow. During the flow process, a vortex will be formed on the top of the quartz ring 30a, as shown in the dotted box part in the figure, which will affect the uniformity of the gas in the process chamber, thereby making the deposited film thickness uneven, and affecting the consistency of the product. Based on this, the present application provides a process chamber and a semiconductor process equipment.

[0023] See also Figure 3-Figure 6 , Figure 3 is a schematic diagram of a three-dimensional structure from the top perspective of a process chamber provided in an embodiment of the present application. Figure 4 yes Figure 3 A schematic diagram of the three-dimensional structure from the bottom perspective of the process chamber. Figure 5 is a schematic diagram of a top view of a process chamber provided in an embodiment of the present application, Figure 6 is along Figure 5 The process chamber may include: a chamber body 10 , a substrate carrier 20 and a quartz ring 30 .

[0024] The top of the chamber body 10 is provided with a first air inlet 101 (such as Figure 3 ), a first air outlet 102 is provided at the bottom (such as Figure 4 The substrate carrier 20 is disposed at the bottom of the chamber body 10 and is used to carry the wafer. Figure 5 As shown, the quartz ring 30 is arranged at the bottom of the chamber body 10 and is arranged around the substrate carrier 20. The diameter of the quartz ring 30 gradually decreases from top to bottom. As some examples, the side of the quartz ring 30 can be a smooth curved surface or a slope. The height of the quartz ring 30 is basically equal to the height of the substrate carrier 20.

[0025] The working principle of the process chamber of this embodiment is as follows: a wafer is placed on the substrate carrier 20, and then a process gas is introduced into the interior of the chamber body 10 through the first gas inlet 101 at the top. After the process gas enters, it is dissociated into plasma. The condition for dissociation may be to apply microwave energy to the process gas. The plasma reacts and deposits on the wafer to form a thin film. The gas (including by-products) inside the chamber body 10 can be discharged through the first gas outlet 102 at the bottom. In the process chamber of this embodiment, since the diameter of the quartz ring 30 gradually decreases from top to bottom, the path of the gas flow is changed, so that the vortex at the top of the quartz ring 30 disappears. Please refer to Figure 7 , Figure 7 yes Figure 6 The simulation diagram of the process chamber is as follows. The simulation principle is the same as Figure 2, I will not go into details here. The airflow in the process chamber is more stable and uniform, which can make the film thickness more uniform and improve the consistency of product quality.

[0026] As an example of a quartz ring 30 with a beveled side, please continue to refer to Figure 6 The longitudinal cross section of the quartz ring 30 can be an isosceles trapezoid, and the angle between the waist and the vertical direction is 10-20°, so that a more stable airflow can be obtained. Figure 7 The simulation results are as follows: the side of the quartz ring 30 is tilted 15° from top to bottom. Figure 2 In contrast, no vortex occurs at the top of the quartz ring 30, so that a more stable airflow effect can be obtained.

[0027] In one embodiment, a limiting structure is provided on the inner side of the bottom of the chamber body 10 to limit the quartz ring 30, thereby preventing the quartz ring 30 from being eccentric and not coaxial with the chamber body 10, which would cause uneven film thickness of the thin film deposited on the wafer surface.

[0028] As an example of a limit structure, see Figure 8 , Figure 8 It is a structural schematic diagram of the inner side of the bottom of a process chamber provided in an embodiment of the present application. The limiting structure 113 can be a first annular groove arranged on the inner side of the bottom of the chamber body 10. During installation, the bottom of the quartz ring 30 can be directly embedded in the first annular groove to achieve positioning, thereby ensuring the coaxiality between the quartz ring 30 and the chamber body 10.

[0029] As another example of a limit structure, see Fig. 9 , Fig. 9 This is a schematic diagram of the structure of the bottom inner side of another process chamber provided in an embodiment of the present application. The limiting structure 113 includes an arc-shaped step 1131 arranged on the bottom inner side of the chamber body 10. The arc-shaped step 1131 is equal to the bottom radius of the quartz ring 30, and the center angle of the arc-shaped step 1131 is less than 90°. The quartz ring 30 is arranged against the arc-shaped step 1131 for limiting. Exemplarily, the arc-shaped step 1131 can be formed by an arc-shaped baffle, or it can be formed by welding a circular plate 113A and an annular plate 113B, wherein the center angle of the annular plate 113B is less than 90°, and the annular plate 113B is welded to the circular plate 113A to form the above-mentioned arc-shaped step 1131. By comparison Figure 8 The structure of the embodiment does not require alignment operation when assembling the quartz ring 30. The quartz ring 30 is placed at the bottom of the chamber body 10 and then pressed against the arc-shaped step 1131, which makes the assembly operation simpler.

[0030] For further information, see Fig. 9 and Fig.10 , Fig.101 is a schematic diagram of an exploded structure of a process chamber provided in an embodiment of the present application. The limiting structure 113 may also include a convex strip 1132 provided on the inner side of the bottom of the chamber body 10. The convex strip 1132 extends radially along the circle where the arc-shaped step 1131 is located, and the arc-shaped step 1131 is symmetrical about the convex strip 1132. The bottom of the quartz ring 30 is provided with a first notch 301 that matches the convex strip 1132. The quartz ring 30 slides along the convex strip 1132 and abuts against the arc-shaped step 1131. During installation, the first notch 301 of the quartz ring 30 is matched with the convex strip 1132, and then the quartz ring 30 is pushed toward the side of the arc-shaped step 1131 along the convex strip 1132 until the quartz ring 30 abuts against the arc-shaped step 1131.

[0031] The limiting structure 113 of this embodiment can not only ensure the coaxiality between the quartz ring 30 and the chamber body 10, but also prevent the quartz ring 30 from rotating relative to the chamber body 10, thereby ensuring that each process can be carried out in an almost completely consistent environment, thereby improving the consistency of process results.

[0032] It should be noted that the chamber body 10 is used to provide a sealed reaction environment, and the specific structural form of the chamber body 10 is not particularly limited in each embodiment of the present application. Figure 6 and Fig.10 The chamber body 10 may include: a bottom plate 11, an air sealing plate 12 and an upper cover assembly 13.

[0033] The top surface of the bottom plate 11 is provided with a second annular groove 111, and the first air outlet 102 is provided at the bottom of the second annular groove 111. Fig.11 , Fig.11 is along Figure 5 In the schematic diagram of the cross-sectional structure along the middle BB line, a first boss 112 is formed at the center of the second annular groove 111, that is, the second annular groove 111 is arranged around the first boss 112. The substrate carrier 20 is arranged on the first boss 112. The air sealing plate 12 is arranged on the top surface of the bottom plate 11 and covers the second annular groove 111 to form a first annular air cavity. A circular hollow portion 103 is provided in the center of the air sealing plate 12 to avoid the substrate carrier 20. A second air inlet 104 connected to the first annular air cavity is provided on the air sealing plate 12. The limiting structure 113 is arranged on the air sealing plate 12. For example, the air sealing plate 12 may include a circular plate 113A and an annular plate 113B arranged on the top surface of the circular plate 113A. The two have the same outer diameter and can be connected by welding. The central angle of the annular plate 113B is less than 90°, so that the aforementioned arc step 1131 can be formed. The upper cover assembly 13 is disposed on the bottom plate 11 to form a closed space with the bottom plate 11 . The first air inlet 101 is disposed on the upper cover assembly 13 .

[0034] In this embodiment, through the structural coordination of the bottom plate 11 and the air sealing plate 12, a first annular air cavity (refer to the second annular groove 111) can be formed at the bottom of the chamber body 10. The first annular air cavity serves as a buffer cavity / gas uniformity cavity for gas discharge, which can make the airflow in the chamber body 10 more stable.

[0035] Preferably, a second boss 114 is further provided on the first boss 112, the substrate carrier 20 is supported on the second boss 114, and the circular hollow portion 103 in the center of the gas sealing plate 12 cooperates with the second boss 114. Further preferably, the height of the second boss 114 is equal to the thickness of the gas sealing plate 12, so that after the gas sealing plate 12 is set on the top surface of the bottom plate 11 to cover the second annular groove 111, the entire surface is flat, so that when the quartz ring 30 is installed, the quartz ring 30 can slide horizontally and smoothly on the bottom of the chamber body 10. In one embodiment, please refer to Fig.10 The second air inlet holes 104 on the air sealing plate 12 may be provided in plurality and evenly distributed along the circumference of the circular hollow portion 103. Fig.10 In the example, six are provided. The edge of the first boss 112 is provided with a second notch 105 which is in one-to-one correspondence with the second air inlet holes 104, and the second notch 105 is in communication with the first annular air cavity (i.e., the second annular groove 111). Multiple exhaust channels are formed by the evenly distributed multiple second air inlet holes 104, thereby further improving the uniformity of the airflow.

[0036] In one embodiment, please refer to Figure 6 , Fig.10 , Fig.12 and Fig.13 A gas filter 40 is also disposed in the second notch 105. One end of the gas filter 40 is connected to the second air inlet 104, and the other end is connected to the first annular air cavity (ie, the second annular groove 111). Fig.13 The second notch 105 extends longitudinally to the bottom of the second annular groove 111 , and a gap exists between the gas filter 40 and the second annular groove 111 in the vertical direction to maintain the communication of the gas path.

[0037] In one embodiment, see Figure 6 , Fig.10 , Fig.11 and Fig.14 , Fig.141 is a schematic diagram of the upward structure of an air-leveling ring provided in an embodiment of the present application. The upper cover assembly 13 may include a cover body 131 and an air-leveling ring 132. The outer wall of the cover body 131 is provided with an annular step 1311. A third annular groove 106 is provided on the inner side of the bottom of the air-leveling ring 132, that is, the wall thickness of the top of the air-leveling ring 132 is greater than the wall thickness of the bottom, and the outer wall of the air-leveling ring 132 is flush, so that a third annular groove 106 (i.e., a step) is formed on the inner side of the bottom. The air-leveling ring 132 is sleeved on the outer side of the outer wall and supported on the annular step 1311 so that the third annular groove 106 forms a second annular air cavity 108. That is, after the bottom surface of the air-leveling ring 132 is supported on the annular step 1311, the third annular groove 106 is sealed together with the annular step 1311 and the vertical wall of the cover body 131 to form a second annular air cavity 108. The second annular air cavity 108 can homogenize the gas to improve the uniformity of the intake air flow. The first air inlet 101 is disposed on the air uniforming ring 132, and the side wall of the cover body 131 is further provided with a through hole 107 communicating with the second annular air cavity 108. A plurality of through holes 107 may be evenly disposed along the circumferential direction of the side wall of the cover body 131 to improve the uniformity of air intake.

[0038] As an example of a cover body 131, please continue to refer to Fig.10 and Fig.11 The cover body 131 may include a first cylindrical sidewall 1320, a first annular cover plate 1310 extending outward from the bottom of the first cylindrical sidewall 1320, a second annular cover plate 1330 extending inward from the top of the first cylindrical sidewall 1320, a second cylindrical sidewall 1340 extending upward from the inner edge of the second annular cover plate 1330, and a top cover 1350 covering the top of the second cylindrical sidewall 1340. The annular step 1311 is provided on the outer side of the second cylindrical sidewall 1340, and the through hole 107 may be provided on the second cylindrical sidewall 1340 and located above the annular step 1311.

[0039] The first annular cover plate 1310 is supported on the edge of the base plate 11, and the first cylindrical side wall 1320 is arranged around the outside of the quartz ring 30 and is higher than the quartz ring 30. The first cylindrical side wall 1320 serves as the main occurrence area of ​​the deposition process. The diameter of the second cylindrical side wall 1340 is smaller than the diameter of the quartz ring 30, and a gas supply area and a plasma excitation area are formed above the quartz ring 30.

[0040] It should be noted that the cover body 131 may be an integrated structure, or may be formed by assembling one or more parts, which is not particularly limited in the embodiment of the present application.

[0041] The present application also provides a semiconductor process equipment, which includes the process chamber described in the above embodiments. Exemplarily, the semiconductor process equipment may be a microwave plasma chemical vapor deposition equipment.

[0042] For other working principles and processes of the semiconductor process equipment, please refer to the description of the clamping device in the aforementioned embodiment of the present invention, which will not be repeated here.

[0043] The above is a detailed introduction to a process chamber and semiconductor process equipment provided by the present application. This article uses specific examples to illustrate the principles and implementation methods of the present application. It should be noted that in the present application, the descriptions of various embodiments have different focuses. For parts that are not described or recorded in detail in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0044] It should be understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application may be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for another example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0045] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless otherwise indicated in the context.

[0046] It should be understood that the orientations or positional relationships indicated by terms such as "top", "bottom", "up", "down", "vertical", and "horizontal" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0047] The above are only preferred embodiments of the present application, and the patent scope of the present application is not limited thereto. The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, not all possible combinations of the various technical features in the above embodiments are described. Any equivalent structure or equivalent process transformation made using the contents of the specification and drawings of this application, or directly or indirectly used in other related technical fields, as long as there is no contradiction in the combination of these technical features, are equally included in the patent protection scope of the present application.

Claims

1. A process chamber, characterized in that: include: The chamber body has a first air inlet at the top and a first air outlet at the bottom; A substrate carrier, arranged at the bottom of the chamber body, for carrying a wafer; A quartz ring is arranged at the bottom of the chamber body and surrounds the substrate stage. The diameter of the quartz ring gradually decreases from top to bottom, and the height of the quartz ring is substantially equal to the height of the substrate stage.

2. The process chamber according to claim 1, characterized in that: The longitudinal cross section of the quartz ring is an isosceles trapezoid, and the angle between the waist and the vertical direction is 10-20 degrees.

3. The process chamber according to claim 1, characterized in that: A limiting structure is provided on the inner side surface of the bottom of the chamber body for limiting the position of the quartz ring.

4. The process chamber according to claim 3, characterized in that: The limiting structure is a first annular groove arranged on the inner side surface of the bottom of the chamber body.

5. The process chamber according to claim 3, characterized in that: The limiting structure includes an arc-shaped step arranged on the inner side of the bottom of the chamber body, the arc-shaped step has a radius equal to that of the bottom of the quartz ring, and a central angle of the arc-shaped step is less than 90°; The quartz ring is arranged against the arc-shaped step to perform position limiting.

6. The process chamber according to claim 5, characterized in that: The limiting structure further comprises a convex strip arranged on the inner side surface of the bottom of the chamber body, the convex strip extends along the radial direction of the circle where the arc-shaped step is located, and the arc-shaped step is symmetrical about the convex strip; The bottom of the quartz ring is provided with a first notch matched with the convex strip, and the quartz ring slides along the convex strip and abuts against the arc-shaped step.

7. The process chamber according to any one of claims 3 to 6, characterized in that: The chamber body comprises: The bottom plate has a second annular groove on the top surface, the first air outlet is arranged at the bottom of the second annular groove, a first boss is formed at the center of the second annular groove; the substrate carrier is arranged on the first boss; An air sealing plate is arranged on the top surface of the bottom plate and covers the second annular groove to form a first annular air cavity. A circular hollow portion is arranged at the center of the air sealing plate to avoid the substrate carrier. A second air inlet hole communicating with the first annular air cavity is arranged on the air sealing plate. The limiting structure is arranged on the air sealing plate. The upper cover assembly is arranged on the bottom plate to enclose a closed space with the bottom plate, and the first air inlet is arranged on the upper cover assembly.

8. The process chamber according to claim 7, characterized in that: The second air inlet holes are provided in plurality and are evenly distributed along the circumference of the circular hollow portion; The edge of the first boss is provided with a second notch which is in one-to-one correspondence with the second air inlet hole, and the second notch is in communication with the first annular air cavity.

9. The process chamber according to claim 8, characterized in that: A gas filter is provided in the second notch, one end of the gas filter is communicated with the second air inlet hole, and the other end of the gas filter is communicated with the first annular air cavity.

10. The process chamber according to claim 7, characterized in that: The upper cover assembly comprises: The cover body has an annular step on its outer side wall; An air-leveling ring, wherein a third annular groove is provided on the inner side of the bottom, the air-leveling ring is sleeved on the outer side of the outer wall and supported on the annular step so that the third annular groove forms a second annular air cavity, and the first air inlet hole is provided on the air-leveling ring; The side wall of the cover body is also provided with a through hole communicating with the second annular air cavity.

11. A semiconductor process equipment, characterized in that: A process chamber comprising any one of claims 1-10.

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