Brokaw reference circuit capable of simultaneously adjusting low-temperature drift voltage and low-temperature drift current

Abstract

The invention aims to provide a brokaw reference circuit capable of simultaneously adjusting low-temperature drift voltage and low-temperature drift current. The circuit comprises at least one current amplification branch, a low-temperature drift reference circuit and a low-temperature drift reference circuit, the input end of the current amplification branch is connected with the drain electrode of the first MOS tube, and the output end of the current amplification branch is grounded through a resistor and used for adjusting the low-temperature drift current; and the plurality of current amplification branches are connected in parallel. The topological structure is simple, and the actually required bias voltage of the low-temperature drift coefficient can be obtained only by adjusting the corresponding resistance value according to the actual demand.

Description

Technical Field

[0001] The invention relates to the technical field of integrated circuits, and in particular to a brockaw reference circuit for simultaneously adjusting a low-temperature drift voltage and a low-temperature drift current. Background Art

[0002] The reference circuit is a basic module in an integrated circuit, which provides other circuit modules with reference voltage and reference current that are less affected by process, voltage and temperature fluctuations. The Brokaw reference circuit is a bandgap voltage reference circuit that is mainly used to provide a stable and accurate voltage reference source. The design of the Brokaw reference circuit is based on the bandgap characteristics of semiconductor materials. The temperature compensation mechanism ensures that the output voltage has extremely high stability and accuracy when the temperature changes and the power supply conditions change. The basic principle of the Brokaw reference circuit is to use the bandgap characteristics in semiconductor materials. In silicon semiconductor materials, there is a fixed bandgap that remains relatively stable when the temperature changes. The Brokaw reference circuit superimposes two different types of pn junction voltages, which change at different rates with temperature. By superimposing these two voltages in an appropriate proportion, a stable voltage value that hardly changes with temperature can be obtained. The main components of the Brokaw reference circuit include a bipolar transistor pair, a current mirror and a differential amplifier. The bipolar transistor pair generates two different temperature-dependent voltages, the current mirror is used to amplify these voltages, and the differential amplifier is used to adjust and stabilize the output voltage. By adjusting the ratio of resistors and transistors, temperature compensation can be achieved to obtain a temperature-independent reference voltage‌.

[0003] The brockaw reference circuit of the prior art is as follows Figure 2 As shown, the reference voltage , For triode The voltage between the base and the emitter; ,in is the Boltzmann constant, is the absolute temperature, is the charge of the electron; For triode and Thermovoltage is a positive temperature coefficient, is a negative temperature coefficient, when When taking appropriate values, and The positive and negative temperature coefficients of the two cancel each other out, resulting in a low temperature drift voltage. , calculated .

[0004] As the process continues to advance, the feature size continues to shrink, the power supply voltage continues to decrease, and the power supply voltage The value needs to be greater than the reference voltage ,When the power supply voltage is lower than 1.5V, the reference circuit of the prior art can no longer work. Therefore, it is an inevitable development trend for the reference circuit to work under low power supply voltage. And the reference voltage in the prior art The value is fixed. When other reference voltages are needed, they can only be achieved through other voltage divider circuits, and low-temperature drift reference current cannot be provided at the same time. Summary of the invention

[0005] The purpose of the present invention is to provide a brockaw reference circuit for simultaneously adjusting low-temperature drift voltage and low-temperature drift current. The circuit has a simple topology structure and only needs to adjust the corresponding resistance value according to actual needs to obtain the bias voltage of the low-temperature drift coefficient actually required.

[0006] A brockaw reference circuit for simultaneously regulating low-temperature drift voltage and low-temperature drift current comprises: at least one current amplification branch; The input end of the current amplification branch is connected to the drain of the first MOS tube, and the output end is grounded through a resistor, so as to adjust the low temperature drift current; A plurality of the current amplifying branches are connected in parallel.

[0007] Preferably, the current amplification branch comprises: a first resistor and a Darlington compound tube; The Darlington compound tube comprises a first triode and a second triode; The base of the first transistor is connected to the source of the second transistor, the source is connected to the emitter of the second transistor, and the emitter is connected to the first resistor; The base of the second transistor is connected to the first resistor, and the emitter is connected to the third resistor.

[0008] Preferably, it also includes: a resistance branch; The resistance branch includes at least one resistor, and the resistance branch is connected in parallel at two ends of the current branch.

[0009] Preferably, it further comprises: a third resistor, a first amplifier, a first MOS tube and a second MOS tube; The first end of the third resistor is connected to the second transistor and the fourth transistor respectively, and the second end is grounded; The gate of the first MOS tube is connected to the gate of the second MOS tube, the drain is connected to the current amplification branch, and the source is connected to the power supply voltage; The source of the second MOS tube is connected to the power supply voltage; The output end of the first amplifier is connected to the gate of the second MOS tube.

[0010] Preferably, the area ratio of the second MOS tube to the first MOS tube is M:1, where M is an integer multiple of 1.

[0011] A brockaw reference circuit control method for simultaneously adjusting low temperature drift voltage and low temperature drift current is applied to a brockaw reference circuit for simultaneously adjusting low temperature drift voltage and low temperature drift current, comprising: Calculate the current flowing through the third resistor; Calculating the voltage of the third resistor according to the current of the third resistor; The bias voltage of the low temperature drift coefficient is calculated according to the voltage of the third resistor.

[0012] Preferably, the calculating the current flowing through the third resistor comprises: According to the virtual short effect of the operational amplifier, , flows through two resistors Current Equal, the value is: ; Flow through resistor Current The values ​​are: ; Flow through resistor Current The values ​​are: .

[0013] Preferably, calculating the voltage of the third resistor according to the current of the third resistor comprises: Current amplification factor of Darlington compound tube , ignoring the effect of the transistor base current on the current The impact of resistance Voltage for: ; ,in is the Boltzmann constant, is the absolute temperature, is the charge of the electron; Thermal voltage is a positive temperature coefficient, is a negative temperature coefficient, the current The current is proportional to the absolute temperature. The current is negatively proportional to the absolute temperature; when When the current is the appropriate value, With current The positive and negative coefficients of the two cancel each other out, and a current with a low temperature drift coefficient is obtained. , and the current , by changing the MOS tube and The ratio of the two areas , and obtain the bias current with the actual required low temperature drift coefficient.

[0014] Preferably, the bias voltage for calculating the low temperature drift coefficient according to the voltage of the third resistor comprises: When the low temperature drift coefficient current Flow through resistor , the resulting voltage is the low temperature drift coefficient; By changing the two resistors The ratio of is used to obtain the bias voltage with the actual required low temperature drift coefficient.

[0015] An electronic device comprises: a chip, a processor and a memory, wherein the memory is used to store computer program codes, the computer program codes include computer instructions, and when the chip executes the computer instructions, the electronic device executes a brockaw reference circuit control method for simultaneously adjusting a low-temperature drift voltage and a low-temperature drift current.

[0016] The beneficial effects of the present invention are: The value cannot be adjusted, causing the power supply voltage It is limited and cannot be lower than 1.5V. Assuming that the voltage in the present invention is Set to 0.1V, the node for , At room temperature, it is generally (0.6V-0.7V), then Greater than 0.8V, consider MOS tube The source-drain voltage required for normal operation is 0.2V, and the power supply voltage required by the present invention is The minimum is 1V, which is a significant improvement over existing technologies. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0019] Figure 1 A structural diagram of a brockaw reference circuit for simultaneously adjusting low-temperature drift voltage and low-temperature drift current according to the present invention; Figure 2 A reference circuit diagram of the prior art of the present invention; Figure 3 The figure is a schematic diagram of the hardware structure of an electronic device of the present invention. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0022] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0023] The brockaw reference circuit of the prior art is as follows Figure 2 As shown, the reference voltage , For triode The voltage between the base and the emitter; ,in is the Boltzmann constant, is the absolute temperature, is the charge of the electron; For triode and Thermovoltage is a positive temperature coefficient, is a negative temperature coefficient, when When taking appropriate values, and The positive and negative temperature coefficients of the two cancel each other out, resulting in a low temperature drift voltage. , calculated .

[0024] As the process continues to advance, the feature size continues to shrink, the power supply voltage continues to decrease, and the power supply voltage The value needs to be greater than the reference voltage ,When the power supply voltage is lower than 1.5V, the reference circuit of the prior art can no longer work. Therefore, it is an inevitable development trend for the reference circuit to work under low power supply voltage. And the reference voltage in the prior art The value is fixed. When other reference voltages are needed, they can only be achieved through other voltage divider circuits, and low-temperature drift reference current cannot be provided at the same time.

[0025] Voltage in the prior art The value cannot be adjusted, causing the power supply voltage It is limited and cannot be lower than 1.5V. Assuming that the voltage in the present invention is Set to 0.1V, the node for , At room temperature, it is generally (0.6V-0.7V), then Greater than 0.8V, consider MOS tube The source-drain voltage required for normal operation is 0.2V, and the power supply voltage required by the present invention is The minimum is 1V, which is a significant improvement over existing technologies.

[0026] Example 1 A brockaw reference circuit for simultaneously regulating low temperature drift voltage and low temperature drift current, referring to Figure 1 , comprising: at least one current amplification branch; The input end of the current amplification branch is connected to the drain of the first MOS tube, and the output end is grounded through a resistor, so as to adjust the low temperature drift current; Low temperature drift refers to the phenomenon that within a certain temperature range, the value of a component will change as the temperature changes. When the temperature changes, the value of the component will also change accordingly. This change is called the temperature coefficient. Low temperature drift means that in a low temperature environment, the temperature coefficient of the component value is very small, that is, the range of change of the component value is very small.

[0027] ‌Low temperature drift current‌ refers to the small change in the output current of a current source when the temperature changes. The smaller the low temperature drift current, the better the stability of the current source when the temperature changes. Low temperature drift current refers to the change in the output current of a current source when the temperature changes. An ideal current source should maintain a constant output current when the temperature changes, but in reality, due to the limitations of materials and circuit design, temperature changes can cause small fluctuations in the current. The smaller the low temperature drift current, the smaller this fluctuation, and the higher the stability and accuracy of the current source.

[0028] ‌Low temperature drift voltage‌ means that when the temperature of the voltage reference device changes, the change in its output voltage relative to the nominal voltage value is very small. This characteristic enables the voltage reference device to maintain high stability and accuracy when the temperature changes.

[0029] Multiple current amplification branches are connected in parallel.

[0030] The main functions of the current amplification branch include signal amplification, improving system sensitivity, and increasing circuit stability. The current amplification branch can amplify the weak input signal current to a current range suitable for subsequent processing, thereby increasing the signal strength and maintaining the accuracy and stability of the signal. By using the current amplification branch, the signal current can be amplified while the noise can be amplified at the same time. However, due to the improvement of the signal-to-noise ratio, the sensitivity of the system also increases. Through subsequent signal processing, the noise can be filtered out, thereby improving the noise tolerance and detection accuracy of the system. The current amplification branch uses the design of a negative feedback circuit to make the current at the output end have a higher suppression effect on the fluctuation of the input current, thereby improving the stability of the circuit.

[0031] Preferably, the current amplification branch includes: a first resistor and a Darlington compound tube; The Darlington compound tube includes a first triode and a second triode; The Darlington compound tube, also known as the Darlington tube, is a semiconductor device formed by connecting two or more triodes in series. The basic principle is to connect two triodes together to form an equivalent new triode, thereby amplifying the current. The Darlington compound tube is characterized by a very high amplification factor and is usually used in application scenarios that require high current amplification.

[0032] The base of the first triode is connected to the source of the second triode, the source is connected to the emitter of the second triode, and the emitter is connected to the first resistor; The base of the second transistor is connected to the first resistor, and the emitter is connected to the third resistor.

[0033] The Darlington compound tube is composed of two triodes connected in series. The collector of the first triode is connected to the collector of the second triode, and the emitter of the first triode is connected to the base of the second triode. The base of the first triode is the base of the Darlington compound tube, and the emitter of the second triode is the emitter of the Darlington compound tube. This connection method makes the amplification factor of the Darlington compound tube the product of the amplification factors of the two triodes.

[0034] The working principle of the Darlington compound tube is based on current amplification. When a small base current is applied to the base of the first transistor, the first transistor is turned on and its collector current becomes the base current of the second transistor. Since the second transistor is also turned on, the final output current is the product of the current amplification factors of the two transistors, thus achieving a high current amplification. In addition, the Darlington compound tube can also be used as a switch. Due to its high current gain, only a small base current is needed to drive a large load current.

[0035] In the embodiment of the present invention, there are two current amplification branches. The first one is formed by the first resistor on the left. and triode ,triode The second current amplification branch is composed of the first resistor on the right. and triode ,triode The current amplification branch is composed of a resistor. The resistor branch formed.

[0036] And the transistor , , and , and The area ratio of the two emitters is , and The area ratio of the two emitters is ; That is, the magnification of the two Darlington compound tubes is equal.

[0037] Preferably, it also includes: a resistance branch; The resistance branch includes at least one resistor, and the resistance branch is connected in parallel at both ends of the current branch.

[0038] In the embodiment of the present invention, the functions of the resistance branch include current division and voltage division, which can protect other components in the circuit to operate safely and prevent excessive current from damaging the components. The resistance branch also constitutes a negative feedback circuit, which can adjust the circuit through the feedback branch to improve the performance and stability of the circuit. Figure 1 In the figure, the resistance branch is a resistor The branch where the resistance Connected in parallel with two current branches.

[0039] Preferably, it further comprises: a third resistor, a first amplifier, a first MOS tube and a second MOS tube; A first end of the third resistor is connected to the second transistor and the fourth transistor respectively, and a second end thereof is grounded; The gate of the first MOS tube is connected to the gate of the second MOS tube, the drain is connected to the current amplification branch, and the source is connected to the power supply voltage; The source of the second MOS tube is connected to the power supply voltage; The output end of the first amplifier is connected to the gate of the second MOS tube.

[0040] In the embodiment of the present invention, the third resistor is Figure 1 In , the first amplifier is Figure 1 In the OPA, by calculating the resistance The voltage across the resistor The current can be used to obtain the bias current of the actually required low temperature drift coefficient and the bias voltage of the actually required low temperature drift coefficient.

[0041] Preferably, the area ratio of the second MOS tube to the first MOS tube is M:1.

[0042] exist Figure 1 The first MOS tube , the second MOS tube , and The area ratio of the two is . Current With current The positive and negative coefficients of the two cancel each other out, and a current with a low temperature drift coefficient is obtained. , and the current , by changing the MOS tube and The ratio of the two areas , we can get the bias current of the low temperature drift coefficient actually required. Similarly, when the current of the low temperature drift coefficient Flow through resistor , the resulting voltage It is also the low temperature drift coefficient. The voltage in the present invention Compared with the voltage in the prior art Compared with the coefficient , then by changing the two resistors The ratio of can be used to obtain the bias voltage with the actual low temperature drift coefficient required, where M is an integer multiple of 1.

[0043] Example 2 A brockaw reference circuit control method for simultaneously adjusting low temperature drift voltage and low temperature drift current is applied to a brockaw reference circuit for simultaneously adjusting low temperature drift voltage and low temperature drift current, comprising: S100, calculating the current flowing through the third resistor; S200, calculating the voltage of the third resistor according to the current of the third resistor; S300, calculating a bias voltage of a low temperature drift coefficient according to a voltage of a third resistor.

[0044] Bias voltage refers to a constant voltage provided in an electronic device or circuit to make it work properly. Its main function is to make electronic devices (such as transistors or operational amplifiers) work in their appropriate working area to achieve the required functions. The essence of bias voltage is to keep passive devices in normal working state, so as to control their input and output characteristics. In the amplifier circuit, the bias voltage can make the transistor or other nonlinear components always show electrical characteristics similar to DC operation when the input signal changes, so as to meet the correct transmission and amplification of the information signal. In the filter circuit, the appropriate bias voltage can reduce the equivalent capacitance of the passive device and improve the filtering efficiency. In the oscillation circuit, the appropriate bias voltage can keep the entire circuit at a constant amplitude and frequency.

[0045] Preferably, S100, calculating the current flowing through the third resistor includes: According to the virtual short effect of the operational amplifier, , flows through two resistors Current Equal, the value is: ; Virtual short circuit refers to a phenomenon caused by excessive input resistance when the power supply voltage is too high. For example, if a resistor is connected to the output of an op amp, if the resistance is large, the current will increase, causing the power supply voltage to rise, causing the op amp operating point to shift and produce overshoot. If the resistor is connected in parallel to the output of the op amp, the current will decrease, thereby reducing the input voltage. This effect is called growth and decline.

[0046] Flow through resistor Current The values ​​are: ; Flow through resistor Current The values ​​are: .

[0047] The current amplification factor of the Darlington compound tube is much higher than that of the ordinary triode, which can meet the needs of high amplification factor while reducing the energy loss caused by impedance mismatch. By reducing the stray signals and unreasonable impedance matching at the input end, the Darlington compound tube can effectively reduce noise. The circuit response speed of the Darlington compound tube is fast and it is suitable for high-speed systems. The static current of the Darlington compound tube is very small, so the power consumption of the drive and feedback circuits is also small.

[0048] In the embodiment of the present invention, the current amplification factor of the Darlington compound tube is Compared with the existing technology, the current amplification factor of a single transistor has been greatly improved, and the effect of the base current of the transistor on the current can be ignored. impact.

[0049] Preferably, S200, calculating the voltage of the third resistor according to the current of the third resistor includes: Current amplification factor of Darlington compound tube , ignoring the effect of the transistor base current on the current The impact of resistance Voltage for: ; ,in is the Boltzmann constant, is the absolute temperature, is the charge of the electron; Thermal voltage is a positive temperature coefficient, is a negative temperature coefficient, the current The current is proportional to the absolute temperature. The current is negatively proportional to the absolute temperature; when When the current is the appropriate value, With current The positive and negative coefficients of the two cancel each other out, and a current with a low temperature drift coefficient is obtained. , and the current , by changing the MOS tube and The ratio of the two areas , and obtain the bias current with the actual required low temperature drift coefficient.

[0050] Bias Current refers to the DC current flowing between the two input terminals of an operational amplifier (Operational Amplifier, Op-Amp for short). Ideally, there is no current flowing in or out of the input port of the operational amplifier, but in actual devices, there are two bias currents at the input port. The bias current is mainly generated by the presence of transistors, resistors and other components inside the operational amplifier. These components will cause a certain amount of current to flow between the input ports. The magnitude and direction of the bias current will change with the structure of the operational amplifier and the working environment.

[0051] Preferably, S300, calculating the bias voltage of the low temperature drift coefficient according to the voltage of the third resistor includes: When the low temperature drift coefficient current Flow through resistor , the resulting voltage is the low temperature drift coefficient; By changing the two resistors The ratio of is used to obtain the bias voltage with the actual required low temperature drift coefficient.

[0052] Low temperature drift coefficient bias voltage refers to a bias voltage with a low temperature coefficient. This voltage can remain relatively stable when the temperature changes, thereby reducing the error caused by temperature changes.

[0053] Since the voltage in the prior art The value cannot be adjusted, causing the power supply voltage It is limited and cannot be lower than 1.5V. Assuming that the voltage in the present invention is Set to 0.1V, the node for , At room temperature, it is generally (0.6V-0.7V), then Greater than 0.8V, consider MOS tube The source-drain voltage required for normal operation is 0.2V, and the power supply voltage required by the present invention is The minimum is 1V, which is a significant improvement over existing technologies.

[0054] Example 3 An electronic device comprises: a chip, a processor and a memory, wherein the memory is used to store computer program codes, and the computer program codes include computer instructions. When the chip executes the computer instructions, the electronic device executes a brockaw reference circuit control method for simultaneously adjusting a low-temperature drift voltage and a low-temperature drift current.

[0055] refer to Figure 3, the electronic device 2 includes a processor 21, a memory 22, an input device 23, and an output device 24. The processor 21, the memory 22, the input device 23, and the output device 24 are coupled via a connector, and the connector includes various interfaces, transmission lines, or buses, etc., which are not limited in the embodiments of the present invention. It should be understood that in various embodiments of the present invention, coupling refers to mutual connection in a specific manner, including direct connection or indirect connection through other devices, for example, through various interfaces, transmission lines, buses, etc.

[0056] The processor 21 may be one or more graphics processing units (GPUs). When the processor 21 is a GPU, the GPU may be a single-core GPU or a multi-core GPU. Optionally, the processor 21 may be a processor group consisting of multiple GPUs, and the multiple processors are coupled to each other via one or more buses. Optionally, the processor may also be other types of processors, etc., which are not limited in the embodiments of the present invention.

[0057] The memory 22 can be used to store computer program instructions and various computer program codes including program codes for executing the scheme of the present invention. Optionally, the memory includes but is not limited to random access memory (RAM), read-only memory (ROM), erasable programmable read only memory (EPROM), or portable read only memory (CD-ROM), which is used for related instructions and data.

[0058] The input device 23 is used to input data and / or signals, and the output device 24 is used to output data and / or signals. The output device 24 and the input device 23 may be independent devices or an integrated device.

[0059] Voltage in the prior art The value cannot be adjusted, causing the power supply voltage It is limited and cannot be lower than 1.5V. Assuming that the voltage in the present invention is Set to 0.1V, the node for , At room temperature, it is generally (0.6V-0.7V), then Greater than 0.8V, consider MOS tube The source-drain voltage required for normal operation is 0.2V, and the power supply voltage required by the present invention is The minimum is 1V, which is a significant improvement over existing technologies.

[0060] The foregoing is merely a specific embodiment of the present invention, which enables those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A brockaw reference circuit for simultaneously regulating low temperature drift voltage and low temperature drift current, characterized in that: include: at least one current amplifying branch; The input end of the current amplification branch is connected to the drain of the first MOS tube, and the output end is grounded through a resistor, so as to adjust the low temperature drift current; A plurality of the current amplifying branches are connected in parallel; It also includes: a third resistor, a first amplifier, a first MOS tube and a second MOS tube; The first end of the third resistor is connected to the second transistor and the fourth transistor respectively, and the second end is grounded; The gate of the first MOS tube is connected to the gate of the second MOS tube, the drain is connected to the current amplification branch, and the source is connected to the power supply voltage; The source of the second MOS tube is connected to the power supply voltage; The output end of the first amplifier is connected to the gate of the second MOS tube.

2. The brockaw reference circuit for simultaneously adjusting low temperature drift voltage and low temperature drift current according to claim 1, characterized in that: The current amplification branch includes: a first resistor and a Darlington compound tube; The Darlington compound tube comprises a first triode and a second triode; The base of the first transistor is connected to the source of the second transistor, the source is connected to the emitter of the second transistor, and the emitter is connected to the first resistor; The base of the second transistor is connected to the first resistor, and the emitter is connected to the third resistor.

3. The brockaw reference circuit for simultaneously adjusting low temperature drift voltage and low temperature drift current according to claim 1, characterized in that: Also includes: Resistor branch; The resistance branch includes at least one resistor, and the resistance branch is connected in parallel at two ends of the current branch.

4. The brockaw reference circuit for simultaneously adjusting low temperature drift voltage and low temperature drift current according to claim 3, characterized in that: The area ratio of the second MOS tube to the first MOS tube is M:1, where M is an integer multiple of 1.

5. A method for controlling a brockaw reference circuit for simultaneously adjusting a low temperature drift voltage and a low temperature drift current, applied to a brockaw reference circuit for simultaneously adjusting a low temperature drift voltage and a low temperature drift current as claimed in any one of claims 1 to 4, characterized in that: include: Calculate the current flowing through the third resistor; Calculating the voltage of the third resistor according to the current of the third resistor; The bias voltage of the low temperature drift coefficient is calculated according to the voltage of the third resistor.

6. The brockaw reference circuit control method for simultaneously adjusting low temperature drift voltage and low temperature drift current according to claim 5, characterized in that: The calculating the current flowing through the third resistor comprises: According to the virtual short effect of the operational amplifier, , flows through two resistors Current Equal, the value is: ； Flow through resistor Current It is expressed as: ； Flow through resistor Current It is expressed as: 。 7. The brockaw reference circuit control method for simultaneously adjusting low temperature drift voltage and low temperature drift current according to claim 6, characterized in that: The step of calculating the voltage of the third resistor according to the current of the third resistor comprises: Current amplification factor of Darlington compound tube , ignoring the effect of the transistor base current on the current The impact of resistance Voltage for: ； ,in is the Boltzmann constant, is the absolute temperature, is the electron charge; Thermal voltage is a positive temperature coefficient, is a negative temperature coefficient, the current The current is proportional to the absolute temperature. The current is negatively proportional to the absolute temperature; when When the current is the preset value, With current The positive and negative coefficients of the two cancel each other out, and a current with a low temperature drift coefficient is obtained. , and the current , by changing the MOS tube and The ratio of the two areas , and obtain the bias current with the actual required low temperature drift coefficient.

8. The brockaw reference circuit control method for simultaneously adjusting low temperature drift voltage and low temperature drift current according to claim 6, characterized in that: The bias voltage for calculating the low temperature drift coefficient according to the voltage of the third resistor comprises: When the low temperature drift coefficient current Flow through resistor , the resulting voltage is the low temperature drift coefficient; By changing the two resistors The ratio of is used to obtain the bias voltage with the actual required low temperature drift coefficient.

9. An electronic device, characterized in that: include: A chip, a processor and a memory, wherein the memory is used to store computer program codes, wherein the computer program codes include computer instructions, and when the chip executes the computer instructions, the electronic device executes a brockaw reference circuit control method for simultaneously adjusting a low-temperature drift voltage and a low-temperature drift current as described in any one of claims 5 to 8.

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