Optimization Method and System for Gallium Nitride Power Device Driver Circuit

Abstract

The present application relates to the technical field of circuit design, and provides an optimization method and system for a gallium nitride power device drive circuit. The method includes constructing a virtual device corresponding to a target device; wherein, the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit; sending a control instruction corresponding to any working condition of the target device to the virtual drive circuit, so that the virtual drive circuit controls the virtual device to operate for a preset duration; after controlling the virtual device to operate for the preset duration, obtaining a temperature distribution map of the virtual drive circuit; generating a plurality of device distribution maps of the virtual drive circuit based on the temperature distribution map; determining a target device distribution map based on each of the device distribution maps; and adjusting the positions of the virtual devices of the virtual drive circuit based on the target device distribution map. This method helps to improve the performance stability of the drive circuit.

Description

Technical Field

[0001] This application relates to the technical field of circuit design, and particularly to an optimization method and system for a gallium nitride power device drive circuit. Background Art

[0002] With the maturity of gallium nitride technology, gallium nitride power devices are widely used in fields such as electric vehicles, power conversion equipment, and communications due to their high efficiency, high frequency, and high power density characteristics. In order to fully utilize the advantages of gallium nitride power devices, the drive circuit of gallium nitride power devices must have high stability and precise control performance. The existing design of the drive circuit of gallium nitride power devices usually relies on manual experience for design. Although this design method can achieve the basic design of the drive circuit of gallium nitride power devices, during the operation of the drive circuit of gallium nitride power devices, the heat generated by each device varies greatly, and heat concentration is likely to occur, which in turn affects the performance of the drive circuit of gallium nitride power devices. How to optimize the thermal distribution of the drive circuit of gallium nitride power devices in the design stage has become an urgent problem to be solved. Summary of the Invention

[0003] This application provides an optimization method and system for a gallium nitride power device drive circuit to solve the problems raised in the above background art.

[0004] In a first aspect, this application provides an optimization method for a gallium nitride power device drive circuit, including:

[0005] Constructing a virtual device corresponding to a target device; wherein, the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a drive circuit of a gallium nitride power device;

[0006] Sending a control instruction corresponding to any working condition of the target device to the virtual drive circuit so that the virtual drive circuit controls the virtual device to operate for a preset duration;

[0007] After controlling the virtual device to operate for a preset duration, obtaining a temperature distribution map of the virtual drive circuit;

[0008] Generating a plurality of device distribution maps of the virtual drive circuit based on the temperature distribution map;

[0009] Determining a target device distribution map based on each of the device distribution maps;

[0010] Adjusting the positions of the virtual devices of the virtual drive circuit based on the target device distribution map.

[0011] In a possible implementation manner, the generating a plurality of device distribution maps of the virtual drive circuit based on the temperature distribution map includes:

[0012] For each virtual device of the virtual drive circuit, determine the temperature distribution region corresponding to the virtual device in the temperature distribution map, and determine the temperature of the virtual device based on the temperature distribution region.

[0013] Based on the temperatures corresponding to the respective virtual devices, adjust the distances between each virtual device and its adjacent virtual devices in the topology map to obtain a plurality of device distribution maps of the virtual drive circuit. Wherein, the topology map is the topology map of the virtual drive circuit.

[0014] In a possible implementation manner, the determining the temperature distribution region corresponding to the virtual device in the temperature distribution map and determining the temperature of the virtual device based on the temperature distribution region includes:

[0015] Determine that the region composed of the respective pixels corresponding to the virtual device in the temperature distribution region is the temperature distribution region corresponding to the virtual device;

[0016] Respectively obtain the pixel temperatures corresponding to the respective pixels of the temperature distribution region, and arrange the pixel temperatures in sequence to obtain a pixel temperature sequence;

[0017] Combine the pixel temperatures in the pixel temperature sequence in sequence to obtain a plurality of pixel temperature combinations; wherein, the number of pixel temperatures in each pixel temperature combination is different;

[0018] For each pixel temperature combination, obtain the standard deviation between the respective pixels in the pixel temperature combination, and when the standard deviation is less than a preset standard deviation, determine the pixel temperature combination as an intermediate target pixel temperature combination;

[0019] Determine that the intermediate target pixel temperature combination with the largest number of pixel temperatures is the target pixel temperature combination;

[0020] Determine the average value of the pixel temperatures of the target pixel temperature combination as the temperature of the virtual device.

[0021] In a possible implementation manner, the determining the target device distribution map based on each device distribution map includes:

[0022] For each device distribution map, adjust each virtual device of the virtual drive circuit based on the device distribution map, and generate a target performance stability index of the adjusted virtual drive circuit based on a preset target performance stability index generation method;

[0023] Determine the target device distribution map based on the target performance stability indices corresponding to the respective device distribution maps.

[0024] In a possible implementation manner, generating the target performance stability index of the adjusted virtual drive circuit based on the preset target performance stability index generation method includes:

[0025] For each working condition of the target device, generate the initial performance stability index corresponding to the adjusted virtual drive circuit under the working condition;

[0026] Determine the minimum initial performance stability index as the target performance stability index.

[0027] In a possible implementation manner, generating the initial performance stability index corresponding to the adjusted virtual drive circuit under the working condition includes:

[0028] Send the control instruction corresponding to the working condition to the adjusted virtual drive circuit, record the response duration of the virtual device, and after controlling the virtual device to run for a preset duration, obtain the target temperature distribution map of the adjusted virtual drive circuit;

[0029] Determine the reciprocal of the response duration as the response rate factor;

[0030] Generate a thermal management performance factor based on the target temperature distribution map;

[0031] Generate the initial performance stability index based on the response rate factor and the thermal management performance factor.

[0032] In a possible implementation manner, generating the thermal management performance factor based on the target temperature distribution map includes:

[0033] Respectively obtain the temperature values corresponding to each pixel of the target temperature distribution map, and obtain the standard deviation between the temperature values;

[0034] Perform a weighted sum of the maximum temperature value in the temperature values and the standard deviation to obtain a target value, and determine the reciprocal of the target value as the thermal management performance factor.

[0035] In a possible implementation manner, generating the initial performance stability index based on the response rate factor and the thermal management performance factor includes:

[0036] Judge whether the response rate factor is less than a preset response rate factor, and judge whether the thermal management performance factor is less than a preset thermal management performance factor;

[0037] If the response rate factor is less than the preset response rate factor and / or the thermal management performance factor is less than the preset thermal management performance factor, determine the initial performance stability index to be 0;

[0038] If the response rate factor is not less than a preset response rate factor and the thermal management performance factor is not less than a preset thermal management performance factor, the response rate factor and the thermal management performance factor are weighted and summed to obtain the initial performance stability index.

[0039] In a second aspect, the present application provides an optimization system for a gallium nitride power device drive circuit, including:

[0040] A construction module for constructing a virtual device corresponding to a target device; wherein, the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit;

[0041] A sending module for sending a control instruction corresponding to any working condition of the target device to the virtual drive circuit, so that the virtual drive circuit controls the virtual device to operate for a preset duration;

[0042] An acquisition module for acquiring a temperature distribution map of the virtual drive circuit after controlling the virtual device to operate for a preset duration;

[0043] A generation module for generating a plurality of device distribution maps of the virtual drive circuit based on the temperature distribution map;

[0044] A determination module for determining a target device distribution map based on each of the device distribution maps;

[0045] An adjustment module for adjusting the positions of the virtual devices of the virtual drive circuit based on the target device distribution map.

[0046] The present application provides an optimization method and system for a gallium nitride power device drive circuit. The method includes: constructing a virtual device corresponding to a target device; wherein, the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit; sending a control instruction corresponding to any working condition of the target device to the virtual drive circuit, so that the virtual drive circuit controls the virtual device to operate for a preset duration; after controlling the virtual device to operate for the preset duration, obtaining a temperature distribution map of the virtual drive circuit; generating a plurality of device distribution maps of the virtual drive circuit based on the temperature distribution map; determining a target device distribution map based on each of the device distribution maps; and adjusting the positions of the virtual devices of the virtual drive circuit based on the target device distribution map. By constructing a virtual device model and performing simulation analysis, designers can accurately obtain the temperature distribution map of the virtual drive circuit during the design phase, and optimize the device layout based on the temperature distribution map, avoiding the deficiencies of relying on experience in traditional design methods, helping to prevent heat concentration phenomena in the drive circuit during operation, improving the performance stability of the drive circuit, and reducing the risk of loss and failure of the device due to overheating. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0048] Figure 1 It is a schematic flowchart of the optimization method for the gallium nitride power device drive circuit provided by the embodiment of the present application;

[0049] Figure 2 It is a schematic block diagram of the structure of the optimization system for the gallium nitride power device drive circuit provided by the embodiment of the present application;

[0050] Figure 3 It is a schematic block diagram of the structure of the terminal device provided by the embodiment of the present application. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0051] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. Obviously, the described embodiments are some, but not all, embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts fall within the scope of protection of the present invention.

[0052] The flowcharts shown in the accompanying drawings are only illustrative examples, and do not necessarily include all contents and operations / steps, nor are they necessarily executed in the order described. For example, some operations / steps can be decomposed, combined or partially merged, so the actual execution order may be changed according to the actual situation.

[0053] It should also be understood that the terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application. As used in the specification of this application and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms.

[0054] It should be further understood that the term "and / or" used in the specification of this application and the appended claims refers to any combination and all possible combinations of one or more of the related listed items, and includes these combinations.

[0055] The following will describe in detail some embodiments of this application with reference to the accompanying drawings. Without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0056] Please refer to Figure 1 , Figure 1 which is a schematic flowchart of an optimization method for a gallium nitride power device drive circuit provided by an embodiment of this application. As Figure 1 shown, the optimization method for the gallium nitride power device drive circuit provided by the embodiment of this application includes steps S1 to S5.

[0057] Step S1: Construct a virtual device corresponding to the target device; wherein, the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit.

[0058] Step S2: Send a control instruction corresponding to any working condition of the target device to the virtual drive circuit, so that the virtual drive circuit controls the virtual device to operate for a preset duration.

[0059] Step S3: After controlling the virtual device to operate for a preset duration, obtain the temperature distribution map of the virtual drive circuit.

[0060] Step S4: Generate a plurality of device distribution maps of the virtual drive circuit based on the temperature distribution map.

[0061] Step S5: Determine the target device distribution map based on each of the device distribution maps.

[0062] Step S6: Adjust the positions of the virtual devices of the virtual drive circuit based on the target device distribution map.

[0063] In this embodiment, it specifically includes:

[0064] In the above step S1, first, a virtual three-dimensional geometric structure of the target device is constructed based on the three-dimensional geometric structure of the target device, and for each component of the target device, the material information of the component is assigned to the corresponding part of the component in the virtual three-dimensional geometric structure.

[0065] In the above step S2, a control instruction corresponding to any working condition of the target device is sent to the virtual drive circuit, and the virtual device is controlled to run for a preset duration under the control instruction.

[0066] In the above step S3, after controlling the virtual device to run for a preset duration, a temperature distribution map of the virtual drive circuit is obtained through a preset virtual infrared imaging device.

[0067] In the above step S4, first, for each virtual device of the virtual drive circuit, a temperature distribution area corresponding to the virtual device is determined in the temperature distribution map, and the temperature of the virtual device is determined based on the temperature distribution area. Then, based on the temperatures corresponding to the respective virtual devices, the distances between each virtual device and its adjacent virtual devices are adjusted in the topology diagram to obtain a plurality of device distribution diagrams of the virtual drive circuit. It should be noted that the method of adjusting the distances between each virtual device and its adjacent virtual devices in the topology diagram based on the temperatures corresponding to the respective virtual devices to obtain a plurality of device distribution diagrams of the virtual drive circuit is specifically introduced in the second embodiment and will not be elaborated here.

[0068] In the above step S5, first, target performance stability indexes corresponding to the respective device distribution diagrams are generated respectively based on a preset target performance stability index generation method, and the device distribution diagram corresponding to the maximum target performance stability index is determined as the target device distribution diagram.

[0069] In the above step S6, the positions of the virtual devices of the virtual drive circuit are adjusted based on the target device distribution diagram, and the drive circuit is produced based on the adjusted virtual drive circuit.

[0070] The method provided in this embodiment enables designers to accurately obtain the temperature distribution map of the virtual drive circuit during the design stage by constructing a virtual device model and performing simulation analysis, and optimize the device layout based on the temperature distribution map, avoiding the deficiencies of relying on experience in traditional design methods, helping to prevent heat concentration phenomena from occurring in the drive circuit during operation, improving the performance stability of the drive circuit, and reducing the risk of loss and failure of the device due to overheating.

[0071] In some embodiments, generating a plurality of device distribution diagrams of the virtual drive circuit based on the temperature distribution diagram includes the following steps:

[0072] For each virtual device of the virtual drive circuit, determine the temperature distribution region corresponding to the virtual device in the temperature distribution diagram, and determine the temperature of the virtual device based on the temperature distribution region;

[0073] Adjust the distance between each virtual device and its adjacent virtual devices in the topology diagram based on the temperatures corresponding to each virtual device to obtain a plurality of device distribution diagrams of the virtual drive circuit. Wherein, the topology diagram is the topology diagram of the virtual drive circuit.

[0074] Wherein, determining the temperature distribution region corresponding to the virtual device in the temperature distribution diagram and determining the temperature of the virtual device based on the temperature distribution region includes the following steps:

[0075] Determine the region composed of each pixel corresponding to the virtual device in the temperature distribution region as the temperature distribution region corresponding to the virtual device;

[0076] Respectively obtain the pixel temperatures corresponding to each pixel of the temperature distribution region, and arrange the pixel temperatures in sequence to obtain a pixel temperature sequence; specifically, for each pixel, convert the color value of the pixel into the pixel temperature corresponding to the pixel based on a preset color value-temperature mapping function;

[0077] Combine the pixel temperatures in the pixel temperature sequence in sequence to obtain a plurality of pixel temperature combinations; wherein, the number of pixel temperatures in each pixel temperature combination is different; specifically, extract the first pixel temperature in the pixel temperature sequence to form a pixel temperature combination, extract the first pixel temperature and the second pixel temperature in the pixel temperature sequence to form a pixel temperature combination, extract the first pixel temperature, the second pixel temperature and the third pixel temperature in the pixel temperature sequence to form a pixel temperature combination, until all the pixel temperatures in the pixel temperature sequence are extracted to form a pixel temperature combination, to obtain the plurality of pixel temperature combinations;

[0078] For each pixel temperature combination, obtain the standard deviation between the pixels in the pixel temperature combination, and when the standard deviation is less than a preset standard deviation, determine the pixel temperature combination as an intermediate target pixel temperature combination;

[0079] Determine the intermediate target pixel temperature combination with the largest number of pixel temperatures as the target pixel temperature combination;

[0080] Determine the average value of the pixel temperatures in the target pixel temperature combination as the temperature of the virtual device.

[0081] Understandably, the method of determining the temperature distribution region corresponding to the virtual device in the temperature distribution map and determining the temperature of the virtual device based on the temperature distribution region uses the pixel temperature sequence for step-by-step combination and standard deviation analysis, which helps to comprehensively understand the thermal characteristics of each virtual device, and thus accurately obtain the temperature of each virtual device.

[0082] Among them, adjusting the distance between each virtual device and its adjacent virtual devices in the topology diagram based on the temperature corresponding to each virtual device to obtain a plurality of device distribution diagrams of the virtual drive circuit includes:

[0083] For any two adjacent virtual devices in the topology diagram, obtain the temperature difference between the two virtual devices and the temperature corresponding to the virtual device with the higher temperature, and obtain the distance adjustment index between the two virtual devices;

[0084] Generate a plurality of device distribution diagrams based on the preset fuzzy logic and each distance adjustment index; Understandably, in the same device distribution diagram, the smaller the temperature difference between two adjacent virtual devices and the higher the temperature corresponding to the virtual device with the higher temperature, the larger the distance value between the two virtual devices.

[0085] Understandably, through fuzzy logic, as many device distribution diagrams as possible can be generated, which helps to effectively optimize the thermal distribution of the gallium nitride power device drive circuit.

[0086] In some embodiments, determining the target device distribution diagram based on each device distribution diagram includes the following steps:

[0087] For each device distribution diagram, adjust each virtual device of the virtual drive circuit based on the device distribution diagram, and generate the target performance stability index of the adjusted virtual drive circuit based on the preset target performance stability index generation method;

[0088] Determine the target device distribution diagram based on the target performance stability index corresponding to each device distribution diagram; Specifically, determine the device distribution diagram corresponding to the maximum target performance stability index as the target device distribution diagram.

[0089] Among them, generating the target performance stability index of the adjusted virtual drive circuit based on the preset target performance stability index generation method includes the following steps:

[0090] For each working condition of the target device, generate the initial performance stability index corresponding to the adjusted virtual drive circuit under the working condition;

[0091] Determine the smallest initial performance stability index as the target performance stability index.

[0092] Understandably, the method of generating the target performance stability index of the adjusted virtual drive circuit based on the preset target performance stability index generation method can improve the fault tolerance of the designed drive circuit and thus improve its stability by generating the initial performance stability index under each working condition and determining the smallest initial performance stability index as the target performance stability index.

[0093] Among them, generating the initial performance stability index corresponding to the adjusted virtual drive circuit under the working condition includes the following steps:

[0094] Send a control instruction corresponding to the working condition to the adjusted virtual drive circuit, record the response duration of the virtual device, and after controlling the virtual device to run for a preset duration, obtain the target temperature distribution map of the adjusted virtual drive circuit; wherein, the response duration is the duration between the moment when the control instruction is sent to the virtual drive circuit and the moment when the virtual device starts to run.

[0095] Determine the reciprocal of the response duration as the response rate factor.

[0096] Generate a thermal management performance factor based on the target temperature distribution map.

[0097] Generate the initial performance stability index based on the response rate factor and the thermal management performance factor.

[0098] Understandably, the method of generating the initial performance stability index corresponding to the adjusted virtual drive circuit under the working condition can comprehensively evaluate the overall performance stability of the virtual drive circuit from multiple perspectives by combining the response rate factor and the thermal management performance factor, ensure that the circuit design can take into account efficient response and good thermal management under actual working conditions, avoid system failures caused by excessive temperature or response delay, and thus improve the stability and reliability of the gallium nitride power device drive circuit.

[0099] Among them, generating the thermal management performance factor based on the target temperature distribution map includes the following steps:

[0100] Respectively obtain the temperature values corresponding to each pixel of the target temperature distribution map, and obtain the standard deviation between the temperature values.

[0101] Weighted sum the maximum temperature value among the temperature values and the standard deviation to obtain a target value, and determine the reciprocal of the target value as the thermal management performance factor; wherein, the weight coefficient corresponding to the maximum temperature value is greater than the weight coefficient corresponding to the standard deviation.

[0102] It can be understood that the above method for generating the thermal management performance factor based on the target temperature distribution map can effectively balance the influence of these two factors on the thermal management performance by weighted summing the maximum temperature value and the standard deviation, and comprehensively evaluate the thermal management performance factor.

[0103] Among them, generating the initial performance stability index based on the response rate factor and the thermal management performance factor includes the following steps:

[0104] Judge whether the response rate factor is less than a preset response rate factor, and judge whether the thermal management performance factor is less than a preset thermal management performance factor;

[0105] If the response rate factor is less than the preset response rate factor and / or the thermal management performance factor is less than the preset thermal management performance factor, determine that the initial performance stability index is 0;

[0106] If the response rate factor is not less than the preset response rate factor and the thermal management performance factor is not less than the preset thermal management performance factor, perform a weighted sum of the response rate factor and the thermal management performance factor to obtain the initial performance stability index; wherein, the weight coefficient corresponding to the response rate factor is greater than the weight coefficient corresponding to the thermal management performance factor.

[0107] It can be understood that the above method for generating the initial performance stability index based on the response rate factor and the thermal management performance factor can timely set the initial performance stability index to 0 when the response rate factor or the thermal management performance factor does not meet the preset standard. This mechanism can effectively prevent unqualified situations in the design and avoid unstable or unreliable design schemes from entering the subsequent development stage, reducing the risk of system failures from the source.

[0108] Please refer to Figure 2 , Figure 2 which is a schematic block diagram of the structure of the optimization system 100 for the gallium nitride power device drive circuit provided by the embodiment of the present application. As Figure 2 shown, the optimization system 100 for the gallium nitride power device drive circuit provided by the embodiment of the present application includes:

[0109] A construction module 110, configured to construct a virtual application scenario of a high-voltage connector; the virtual application scenario includes a virtual three-dimensional structure of the high-voltage connector, and the high-voltage connector is a flat terminal high-voltage connector.

[0110] A building module 110 for building a virtual device corresponding to a target device; wherein, the target device includes a driving circuit, the virtual device includes a virtual driving circuit, and the driving circuit is a gallium nitride power device driving circuit.

[0111] A sending module 120 for sending a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to operate for a preset duration.

[0112] An obtaining module 130 for obtaining a temperature distribution map of the virtual driving circuit after controlling the virtual device to operate for a preset duration.

[0113] A generating module 140 for generating a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map.

[0114] A determining module 150 for determining a target device distribution map based on each of the device distribution maps.

[0115] An adjusting module 160 for adjusting the positions of the virtual devices of the virtual driving circuit based on the target device distribution map.

[0116] It should be noted that those skilled in the art can clearly understand that for the convenience and brevity of description, the specific working processes of the above-described system and each module can refer to the process in the embodiment of the optimization method of the gallium nitride power device driving circuit described above, and will not be repeated here.

[0117] The optimization system 100 of the gallium nitride power device driving circuit provided by the above embodiment can be implemented in the form of a computer program, and the computer program can run on a terminal device 200 as shown in Figure 3 shown.

[0118] Please refer to Figure 3 , Figure 3 , which is a schematic block diagram of the structure of the terminal device 200 provided by the embodiment of the present application. The terminal device 200 includes a processor 201 and a memory 202. The processor 201 and the memory 202 are connected through a device bus 203. Among them, the memory 202 can include a non-volatile storage medium and an internal memory.

[0119] The non-volatile storage medium can store a computer program. The computer program includes program instructions, and when the program instructions are executed by the processor 201, the processor 201 can be made to execute any of the above-described optimization methods of the gallium nitride power device driving circuit.

[0120] The processor 201 is used to provide computing and control capabilities to support the operation of the entire terminal device 200.

[0121] The internal memory provides an environment for the operation of a computer program in a non-volatile storage medium. When the computer program is executed by the processor 201, the processor 201 can be caused to execute any of the above optimization methods for the gallium nitride power device drive circuit.

[0122] Those skilled in the art can understand that Figure 3 The structure shown in is only a block diagram of some structures related to the solution of the present application, and does not constitute a limitation on the terminal device 200 involved in the solution of the present application. The specific terminal device 200 may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0123] It should be understood that the processor 201 may be a central processing unit (CPU), and the processor 201 may also be other general-purpose processors, digital signal processors (DSPs), application specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Among them, the general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc.

[0124] Among them, in some embodiments, the processor 201 is used to run a computer program stored in the memory to implement the following steps:

[0125] Construct a virtual device corresponding to the target device; wherein, the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit;

[0126] Send a control instruction corresponding to any working condition of the target device to the virtual drive circuit, so that the virtual drive circuit controls the virtual device to run for a preset duration;

[0127] After controlling the virtual device to run for a preset duration, obtain the temperature distribution map of the virtual drive circuit;

[0128] Generate a plurality of device distribution maps of the virtual drive circuit based on the temperature distribution map;

[0129] Determine the target device distribution map based on each of the device distribution maps;

[0130] Adjust the positions of the virtual devices of the virtual drive circuit based on the target device distribution map.

[0131] It should be noted that those skilled in the art can clearly understand that for the convenience and conciseness of description, the specific working process of the above-described terminal device 200 can refer to the process of the optimization method of the gallium nitride power device drive circuit described above, and will not be repeated here.

[0132] The embodiment of the present application also provides a computer-readable storage medium. The computer-readable storage medium stores a computer program. When the computer program is executed by one or more processors, the one or more processors are caused to implement the optimization method of the gallium nitride power device drive circuit provided by the embodiment of the present application.

[0133] Among them, the computer-readable storage medium may be an internal storage unit of the foregoing terminal device 200, such as the hard disk or memory of the terminal device 200. The computer-readable storage medium may also be an external storage device of the terminal device 200, such as a plug-in hard disk equipped with the terminal device 200, a Smart Media Card (SMC), a Secure Digital (SD) card, a Flash Card, etc.

[0134] The above is only the specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or substitutions within the technical scope disclosed by the present application, and these modifications or substitutions should all be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A method for optimizing a gallium nitride power device driving circuit, characterized in that: include: Constructing a virtual device corresponding to a target device; wherein the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit; Sending a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to operate for a preset time; After controlling the virtual device to run for a preset time, obtaining a temperature distribution diagram of the virtual drive circuit; generating a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map; Determining a target device distribution map based on each of the device distribution maps; Adjusting the position of each virtual device of the virtual driving circuit based on the target device distribution map; Wherein, the generating of a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map comprises: For each virtual device of the virtual driving circuit, determining a temperature distribution area corresponding to the virtual device in the temperature distribution map, and determining the temperature of the virtual device based on the temperature distribution area; Based on the temperature corresponding to each virtual device, the distance between each virtual device and its adjacent virtual device is adjusted in the topological diagram to obtain a plurality of device distribution diagrams of the virtual driving circuit; wherein the topological diagram is a topological diagram of the virtual driving circuit; Wherein, determining the temperature distribution area corresponding to the virtual device in the temperature distribution map, and determining the temperature of the virtual device based on the temperature distribution area, includes: Determine that the area composed of pixels corresponding to the temperature distribution area of ​​the virtual device is the temperature distribution area corresponding to the virtual device; Respectively obtaining pixel temperatures corresponding to each pixel in the temperature distribution area, and arranging the pixel temperatures in sequence to obtain a pixel temperature sequence; Combining the pixel temperatures in the pixel temperature sequence in sequence to obtain a plurality of pixel temperature combinations; wherein the number of pixel temperatures in each of the pixel temperature combinations is different from each other; For each of the pixel temperature combinations, obtaining a standard deviation between pixels in the pixel temperature combination, and determining that the pixel temperature combination is an intermediate target pixel temperature combination when the standard deviation is less than a preset standard deviation; Determine the intermediate target pixel temperature combination with the largest number of pixel temperatures as the target pixel temperature combination; An average value of the pixel temperatures of the target pixel temperature combination is determined as the temperature of the virtual device.

2. The method for optimizing a gallium nitride power device driving circuit according to claim 1, characterized in that: The determining a target device distribution map based on each of the device distribution maps comprises: For each of the device distribution maps, adjusting each virtual device of the virtual driving circuit based on the device distribution map, and generating a target performance stability index of the virtual driving circuit after adjustment based on a preset target performance stability index generation method; A target device distribution map is determined based on a target performance stability index corresponding to each of the device distribution maps.

3. The method for optimizing a gallium nitride power device driving circuit according to claim 2, characterized in that: The method for generating the target performance stability index of the virtual driving circuit after adjustment based on a preset target performance stability index generation method includes: For each working condition of the target device, generating an initial performance stability index corresponding to the adjusted virtual drive circuit under the working condition; The minimum initial performance stability index is determined as the target performance stability index.

4. The method for optimizing a gallium nitride power device driving circuit according to claim 3, characterized in that: The generating of the initial performance stability index of the virtual driving circuit under the working condition after adjustment includes: Sending a control instruction corresponding to the working condition to the adjusted virtual drive circuit, recording the response time of the virtual device, and after controlling the virtual device to run for a preset time, obtaining a target temperature distribution diagram of the adjusted virtual drive circuit; Determine the reciprocal of the response time as a response rate factor; generating a thermal management performance factor based on the target temperature profile; The initial performance stability index is generated based on the response rate factor and the thermal management performance factor.

5. The method for optimizing a gallium nitride power device driving circuit according to claim 4, characterized in that: The generating a thermal management performance factor based on the target temperature distribution map comprises: Respectively obtain the temperature value corresponding to each pixel of the target temperature distribution map, and obtain the standard deviation between the temperature values; A maximum temperature value among the temperature values ​​and the standard deviation are weightedly summed to obtain a target value, and a reciprocal corresponding to the target value is determined as the thermal management performance factor.

6. The method for optimizing a gallium nitride power device driving circuit according to claim 4, characterized in that: The generating the initial performance stability index based on the response rate factor and the thermal management performance factor comprises: Determining whether the response rate factor is less than a preset response rate factor, and determining whether the thermal management performance factor is less than a preset thermal management performance factor; If the response rate factor is less than a preset response rate factor and / or the thermal management performance factor is less than a preset thermal management performance factor, determining that the initial performance stability index is 0; If the response rate factor is not less than a preset response rate factor and the thermal management performance factor is not less than a preset thermal management performance factor, the response rate factor and the thermal management performance factor are weightedly summed to obtain the initial performance stability index.

7. An optimization system for a gallium nitride power device driving circuit, characterized in that: A construction module, used to construct a virtual device corresponding to a target device; wherein the target device includes a drive circuit, the virtual device includes a virtual drive circuit, and the drive circuit is a gallium nitride power device drive circuit; A sending module, used for sending a control instruction corresponding to any working condition of the target device to the virtual driving circuit, so that the virtual driving circuit controls the virtual device to run for a preset time; An acquisition module, configured to acquire a temperature distribution diagram of the virtual drive circuit after controlling the virtual device to run for a preset time period; A generating module, configured to generate a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map; A determination module, configured to determine a target device distribution map based on each of the device distribution maps; An adjustment module, configured to adjust the position of each virtual device of the virtual driving circuit based on the target device distribution map; Wherein, the generating of a plurality of device distribution maps of the virtual driving circuit based on the temperature distribution map comprises: For each virtual device of the virtual driving circuit, determining a temperature distribution area corresponding to the virtual device in the temperature distribution map, and determining the temperature of the virtual device based on the temperature distribution area; Based on the temperature corresponding to each virtual device, the distance between each virtual device and its adjacent virtual device is adjusted in the topological diagram to obtain a plurality of device distribution diagrams of the virtual driving circuit; wherein the topological diagram is a topological diagram of the virtual driving circuit; Wherein, determining the temperature distribution area corresponding to the virtual device in the temperature distribution map, and determining the temperature of the virtual device based on the temperature distribution area, includes: Determine that the area composed of pixels corresponding to the temperature distribution area of ​​the virtual device is the temperature distribution area corresponding to the virtual device; Respectively obtaining pixel temperatures corresponding to each pixel in the temperature distribution area, and arranging the pixel temperatures in sequence to obtain a pixel temperature sequence; Combining the pixel temperatures in the pixel temperature sequence in sequence to obtain a plurality of pixel temperature combinations; wherein the number of pixel temperatures in each of the pixel temperature combinations is different from each other; For each of the pixel temperature combinations, obtaining a standard deviation between pixels in the pixel temperature combination, and determining that the pixel temperature combination is an intermediate target pixel temperature combination when the standard deviation is less than a preset standard deviation; Determine the intermediate target pixel temperature combination with the largest number of pixel temperatures as the target pixel temperature combination; An average value of the pixel temperatures of the target pixel temperature combination is determined as the temperature of the virtual device.

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