Power semiconductor device and processing method thereof

Abstract

The invention provides a power semiconductor device and a processing method thereof, and the power semiconductor device comprises a first electrode structure and a second electrode structure, the first electrode structure and the second electrode structure are arranged at an interval, and the second electrode structure comprises an electrode main body and a first connection structure connected with the electrode main body; the chip is arranged between the first electrode structure and the electrode main body and is electrically connected with the first electrode structure and the electrode main body; the shell assembly comprises a tube shell and a second connecting structure arranged on the tube shell, the tube shell is arranged on the periphery of the chip in a surrounding mode, the tube shell is connected with the first electrode structure, and the second connecting structure is connected with the first connecting structure; the energy release channel is arranged between the first connecting structure and the second connecting structure. According to the technical scheme, the problem that the probability that the tube shell structure is damaged by released energy when the power semiconductor device is short-circuited in the related technology is effectively solved.

Description

Technical Field

[0001] The present invention relates to the field of power semiconductor devices, and in particular to a power semiconductor device and a processing method thereof. Background Art

[0002] In power transmission equipment, high-power semiconductor devices play an indispensable role. The design of high-power semiconductor devices is directly related to the overall efficiency, stability and safety of the power system. Especially under high voltage and high current operating conditions, the reliability, durability and explosion resistance of the device need to be considered.

[0003] In the prior art, when a high-power semiconductor device is under extreme working conditions, such as a short circuit, a huge amount of energy will be suddenly released inside it. This energy release not only poses a threat to the device itself, but may also cause the failure or even destruction of the tube and shell structure. The failure or even destruction of the tube and shell structure is not limited to the physical integrity of the tube and shell structure. Its fragments and residues may also fly to the periphery of the tube and shell structure, causing secondary damage to surrounding equipment, such as scratching or short-circuiting other components, thereby triggering a chain reaction in the entire power system, reducing the reliability and safety of the system operation, and may also cause harm to operators, increasing the probability of industrial safety accidents. Summary of the invention

[0004] The main purpose of the present invention is to provide a power semiconductor device and a processing method thereof, so as to solve the problem in the related art that when the power semiconductor device is short-circuited, the energy released will have a high probability of damaging the tube shell structure.

[0005] To achieve the above-mentioned purpose, according to one aspect of the present invention, there is provided a power semiconductor device, comprising: a first electrode structure and a second electrode structure, the first electrode structure and the second electrode structure are arranged at intervals, the second electrode structure comprises an electrode body and a first connection structure connected to the electrode body; a chip, arranged between the first electrode structure and the electrode body, and electrically connected to both the first electrode structure and the electrode body; a shell component, the shell component comprises a tube shell and a second connection structure arranged on the tube shell, the tube shell is arranged around the periphery of the chip, the tube shell is connected to the first electrode structure, and the second connection structure is connected to the first connection structure; an energy release channel, arranged on the first connection structure and / or the second connection structure, or, arranged between the first connection structure and the second connection structure.

[0006] Furthermore, the power semiconductor device further includes a third connection structure, which is arranged between the first connection structure and the second connection structure.

[0007] Further, the energy release channel is arranged between the first connecting structure and the second connecting structure, the third connecting structure includes at least one connecting part, and the energy release channel includes at least one sub-channel; wherein, when the third connecting structure includes a connecting part and the energy release channel includes a sub-channel, a sub-channel is formed between the two ends of the connecting part and between the first connecting structure and the second connecting structure; when the third connecting structure includes multiple connecting parts and the energy release channel includes multiple sub-channels, the multiple connecting parts are arranged at intervals along the circumference of the first connecting structure, and a sub-channel is formed between any two adjacent connecting parts and between the first connecting structure and the second connecting structure.

[0008] Furthermore, the power semiconductor device also includes a closed structure, which is arranged at the periphery of the first connecting structure and the second connecting structure and closes the energy release channel.

[0009] Furthermore, the closed structure includes a closed ring, an inner wall of which is provided with a receiving groove, the first connecting structure and the second connecting structure are inserted into the receiving groove and are arranged in close contact with the groove wall of the receiving groove.

[0010] Furthermore, the closed ring includes a mounting plate, a first extension plate arranged at the first end of the mounting plate, and a second extension plate arranged at the second end of the mounting plate. The first extension plate and the second extension plate both extend toward the electrode body, and a receiving groove is formed between the mounting plate, the first extension plate and the second extension plate.

[0011] Furthermore, the material of the closed ring is non-metal.

[0012] Furthermore, a cavity is provided in the tube shell.

[0013] Furthermore, the tube shell includes a first shell and a second shell butted against the first shell, and a cavity is formed between the first shell and the second shell.

[0014] Furthermore, the tube shell also includes a first connection layer and a second connection layer, the first connection layer is arranged on the first shell, the second connection layer is arranged on the second shell, and the first connection layer and the second connection layer are connected to connect the first shell and the second shell.

[0015] Furthermore, the first connection layer is a first metal layer, and the second connection layer is a second metal layer.

[0016] Further, the first shell includes a first annular plate and a first outer convex plate arranged on the first annular plate, and the first connecting layer is arranged on a side of the first outer convex plate facing the second shell to connect the first outer convex plate to the second shell.

[0017] Furthermore, the second shell includes a second annular plate and a second convex plate arranged on the second annular plate, the second convex plate and the first convex plate are arranged at intervals, and the second connecting layer is arranged on the side of the second convex plate facing the first shell to connect the second convex plate to the first shell.

[0018] Furthermore, the first shell is located inside the second shell, and an annular accommodating cavity is provided between the chip and the first shell.

[0019] Furthermore, a through hole is provided on the tube shell, the through hole connects the annular accommodating cavity and the outside of the tube shell, and in the stacking direction of the first electrode structure and the second electrode structure, the minimum distance between the through hole and the cavity is between 0.5 mm and 3 mm.

[0020] Furthermore, the power semiconductor device further comprises a buffer structure, the buffer structure is located between the chip and the tube shell, and the surface of the buffer structure away from the tube shell has a plurality of protrusions.

[0021] According to another aspect of the present invention, a method for processing a power semiconductor device is provided, which is used to process the above-mentioned power semiconductor device, and the processing method comprises:

[0022] Obtaining a first electrode structure and a second electrode structure, wherein the electrode body and the first connecting structure are connected to form the second electrode structure;

[0023] Obtaining a tube shell and a second connecting structure, and connecting the tube shell and the second connecting structure to obtain a housing assembly;

[0024] connecting the tube shell to the first electrode structure;

[0025] electrically connecting the chip to the first electrode structure and positioning the chip in the housing assembly;

[0026] The electrode body is electrically connected to the chip, and the chip is located between the first electrode structure and the electrode body;

[0027] An energy release channel is provided on the first connection structure and / or the second connection structure, and the first connection structure is connected to the second connection structure; or the first connection structure is connected to the second connection structure, and an energy release channel is provided between the first connection structure and the second connection structure.

[0028] By applying the technical solution of the present invention, the power semiconductor device includes a first electrode structure, a second electrode structure spaced apart from the first electrode structure, a chip, a housing component and an energy release channel. The second electrode structure includes an electrode body and a first connecting structure, the first connecting structure is connected to the electrode body, and the chip is electrically connected to the electrode body. The chip is arranged between the first electrode structure and the electrode body. The housing component includes a tube shell and a second connecting structure, the tube shell is arranged around the periphery of the chip, the second connecting structure is arranged on the tube shell, the tube shell is connected to the first electrode structure, and the second connecting structure is connected to the first connecting structure. The energy release channel is arranged between the first connecting structure and the second connecting structure. Through the above-mentioned arrangement, current can flow between the first electrode structure, the chip and the electrode body. The tube shell, the second connecting structure, the first connecting structure, the electrode body and the first electrode structure can protect the chip. When the power semiconductor device is short-circuited, the energy generated can be discharged through the energy release channel, which reduces the probability that the energy breaks through the tube shell structure and causes damage to the tube shell structure when the energy is large, thereby reducing the probability that the damaged tube shell structure will damage the equipment around the power semiconductor device. That is, by setting up the energy release channel, a path for energy release is provided for the power semiconductor device when it fails, avoiding the accumulation of energy inside the power semiconductor device, thereby reducing the risk of explosion of the power semiconductor device, and can effectively reduce the probability of device explosion caused by short circuit, ensuring the safe operation of the equipment. Therefore, the technical solution of the present application effectively solves the problem in the related art that when the power semiconductor device is short-circuited, the energy released will cause a high probability of damage to the tube shell structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The drawings constituting a part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0030] Figure 1 A schematic diagram of the three-dimensional structure of an embodiment of a power semiconductor device according to the present invention is shown;

[0031] Figure 2 Shows Figure 1 A schematic cross-sectional view of a power semiconductor device;

[0032] Figure 3 Shows Figure 2 A local enlarged schematic diagram of a power semiconductor device at point A;

[0033] Figure 4 Shows Figure 1 A schematic cross-sectional view of a tube shell of a power semiconductor device;

[0034] Figure 5 Shows Figure 1A schematic diagram of the exploded structure of a tube shell of a power semiconductor device;

[0035] Figure 6 Shows Figure 1 A cross-sectional schematic diagram of the connection between a first connection structure and a second connection structure of a power semiconductor device;

[0036] Figure 7 Shows Figure 1 A schematic top view of a third connection structure of a power semiconductor device;

[0037] Figure 8 Shows Figure 1 A schematic cross-sectional view of a third connection structure when the power semiconductor device has only one sub-channel;

[0038] Fig. 9 Shows Figure 1 A schematic cross-sectional view of the three-dimensional structure of a tube shell of a power semiconductor device;

[0039] Fig.10 Shows Figure 1 A schematic cross-sectional view of a buffer structure of a power semiconductor device;

[0040] Fig.11 Shows Figure 1 A schematic cross-sectional view of a three-dimensional structure of a buffer structure of a power semiconductor device;

[0041] Fig.12 A schematic structural diagram showing the connection between a first housing and a housing according to another embodiment of a power semiconductor device of the present invention is shown;

[0042] Fig.13 A schematic flow chart of a method for processing a power semiconductor device according to the present invention is shown.

[0043] The above drawings include the following reference numerals:

[0044] 10. First electrode structure; 20. Second electrode structure; 21. Electrode body; 22. First connection structure; 30. Chip; 40. Shell assembly; 41. Tube shell; 411. Cavity; 412. First shell; 4121. First annular plate; 4122. First outer convex plate; 4123. Third outer convex plate; 413. Second shell; 4131. Second annular plate; 4132. Second outer convex plate; 4133. Fourth outer convex plate; 414. First connection layer; 415. Second connection layer; 416. Through hole; 42. Second connection structure; 50. Energy release channel; 51. Sub-channel; 60. Third connection structure; 61. Connection part; 70. Closing structure; 71. Closing ring; 711. Mounting plate; 712. First extension plate; 713. Second extension plate; 72. Accommodation groove; 80. Annular accommodation cavity; 90. Buffer structure; 91. Protrusion. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is by no means intended to limit the present invention and its application or use. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0046] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0047] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present invention. Meanwhile, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, and therefore, once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0048] As the core component of power transmission equipment, high-power semiconductor devices need to withstand high voltage and high current working environments in practical applications. The shell of existing crimping devices is usually composed of metal electrodes and ceramic shells. Due to the stress and brittleness of ceramic materials, when the chip fails due to a short circuit, a large amount of energy is released instantly, which may cause explosive damage to the inside of the device and the shell. On the one hand, the shell explosion will cause damage to the device body and cause failure of the series components. On the other hand, the residues produced by the shell explosion may also impact nearby equipment, interfere with the operation of the equipment, reduce the reliability of the equipment operation, and even cause personal injury.

[0049] The DC capacitor of the UHV converter submodule has a capacitance of about 24mF. When the power device-capacitor direct short-circuit extreme condition occurs, the short-circuit current exceeds 1000kA. As the energy increases further, the ceramic tube shell and metal electrodes of the device may be impacted and fail by the huge energy. In this case, the explosion-proof failure of the tube shell is very likely to cause serious accidents and bring hidden dangers.

[0050] In the prior art, the shell material of the in-service press-fit high-power semiconductor device is ceramic, the sealing form is cold-pressed welding, and the insulation form is gas insulation. The explosion-proof ability of this package structure device is reflected in the strength of the ceramic shell and the cold-pressed welding joint itself, and because the device size is limited by the equipment application and the internal space of the package and the thickness of the ceramic shell, when the device failure energy exceeds the load of the ceramic shell and the cold-pressed welding joint, it will not have explosion-proof ability.

[0051] like Figures 1 to 3 as well as Figure 6As shown, in this embodiment, the power semiconductor device includes: a first electrode structure 10, a second electrode structure 20, a chip 30, a housing component 40 and an energy release channel 50. The first electrode structure 10 and the second electrode structure 20 are arranged at intervals, and the second electrode structure 20 includes an electrode body 21 and a first connection structure 22 connected to the electrode body 21. The chip 30 is arranged between the first electrode structure 10 and the electrode body 21, and is electrically connected to both the first electrode structure 10 and the electrode body 21. The housing component 40 includes a tube shell 41 and a second connection structure 42 arranged on the tube shell 41, the tube shell 41 is arranged around the periphery of the chip 30, the tube shell 41 is connected to the first electrode structure 10, and the second connection structure 42 is connected to the first connection structure 22. The energy release channel 50 is arranged between the first connection structure 22 and the second connection structure 42.

[0052] Applying the technical solution of this embodiment, the power semiconductor device includes a first electrode structure 10, a second electrode structure 20 spaced apart from the first electrode structure 10, a chip 30, a housing component 40, and an energy release channel 50. The second electrode structure 20 includes an electrode body 21 and a first connection structure 22, the first connection structure 22 is connected to the electrode body 21, and the chip 30 is electrically connected to the electrode body 21. The chip 30 is arranged between the first electrode structure 10 and the electrode body 21. The housing component 40 includes a tube shell 41 and a second connection structure 42, the tube shell 41 is arranged around the periphery of the chip 30, the second connection structure 42 is arranged on the tube shell 41, the tube shell 41 is connected to the first electrode structure 10, and the second connection structure 42 is connected to the first connection structure 22. The energy release channel 50 is arranged between the first connection structure 22 and the second connection structure 42. Through the above arrangement, current can flow between the first electrode structure 10, the chip 30 and the electrode body 21. The tube shell 41, the second connection structure 42, the first connection structure 22, the electrode body 21 and the first electrode structure 10 can protect the chip 30. When the power semiconductor device is short-circuited, the energy generated can be discharged through the energy release channel 50, which reduces the probability that the energy breaks through the tube shell structure and causes damage to the tube shell structure when the energy is large, thereby reducing the probability that the damaged tube shell structure causes damage to the equipment around the power semiconductor device, that is, by setting the energy release channel 50, a path for energy release is provided for the power semiconductor device when it fails, avoiding the accumulation of energy inside the power semiconductor device, thereby reducing the risk of explosion of the power semiconductor device, and can effectively reduce the probability of device explosion caused by short circuit, ensuring the safe operation of the equipment. Therefore, the technical solution of this embodiment effectively solves the problem in the related art that when the power semiconductor device is short-circuited, the energy released will cause a high probability of damage to the tube shell structure.

[0053] The first connection structure 22 includes a first annular flange, and the second connection structure 42 includes a second annular flange.

[0054] The first electrode structure 10 is a cathode, and the electrode body 21 is an anode.

[0055] The housing assembly 40 further includes a cathode ceramic ring, and a gate lead flange is provided between the cathode ceramic ring and the tube shell 41. The tube shell 41 is connected to the first electrode structure 10, which means that the tube shell is connected to the first electrode structure through the gate lead flange and the cathode ceramic ring.

[0056] The power semiconductor device of this embodiment is an integrated gate-commutated thyristor.

[0057] like Figure 7 and Figure 8 As shown, in this embodiment, the power semiconductor device further includes a third connection structure 60, which is disposed between the first connection structure 22 and the second connection structure 42. By providing the third connection structure 60, the first connection structure 22 and the second connection structure 42 can be connected, so that the connection between the first connection structure 22 and the second connection structure 42 is more stable.

[0058] The third connection structure 60 is formed by argon arc welding.

[0059] like Figure 7 and Figure 8 As shown, in this embodiment, the energy release channel 50 is arranged between the first connection structure 22 and the second connection structure 42, the third connection structure 60 includes at least one connection portion 61, and the energy release channel 50 includes at least one sub-channel 51. By providing the connection portion, the connection between the first connection structure 22 and the second connection structure 42 can be made more stable. By providing the sub-channel 51, the release of energy is facilitated.

[0060] The energy release channel 50 refers to the gap between the first connection structure 22 and the second connection structure 42. After the power semiconductor device is manufactured, the first connection structure 22 and the second connection structure 42 are tightly fitted, and the gap between the first connection structure 22 and the second connection structure 42 is 0. However, when the energy is released, Figure 6 As shown, the energy shock wave can stretch the first connection structure 22 and the second connection structure 42 apart, so that the gap between the first connection structure 22 and the second connection structure 42 is greater than 0, which facilitates energy release.

[0061] In this embodiment, when the third connection structure 60 includes a plurality of connection parts 61 and the energy release channel 50 includes a plurality of sub-channels 51, the plurality of connection parts 61 are arranged at intervals along the circumference of the first connection structure 22, and a sub-channel 51 is formed between any two adjacent connection parts 61 and between the first connection structure 22 and the second connection structure 42. The arrangement of the plurality of connection parts 61 makes the connection between the first connection structure 22 and the second connection structure 42 more stable. A sub-channel 51 is formed between any two adjacent connection parts 61 and between the first connection structure 22 and the second connection structure 42, so that when the connection between the first connection structure 22 and the second connection structure 42 is more stable, more sub-channels 51 can be formed, which facilitates the rapid release of energy. By arranging a plurality of sub-channels 51, it is possible to realize multi-path release of energy, effectively disperse and reduce the bearing pressure of a single channel, further improve the anti-explosion performance of the power semiconductor device, and significantly reduce the explosion risk of the power semiconductor device caused by energy accumulation.

[0062] In this embodiment, the number of connection parts is 6, and the 6 connection parts are evenly distributed at 60° in the circumferential direction of the first connection structure 22. The sum of the arc lengths of the 6 connection parts 61 is 5% to 10% of the circumference of the first connection structure 22. Except for the 6 connection parts, the remaining circumferential positions of the first connection structure 22 and the second connection structure 42 are not welded.

[0063] like Figure 8 As shown, when the third connection structure 60 includes a connection portion 61 and the energy release channel 50 includes a sub-channel 51, a sub-channel 51 is formed between two ends of the connection portion 61 and between the first connection structure 22 and the second connection structure 42. The connection portion 61 is an arc-shaped weld.

[0064] In other embodiments, the energy release channel 50 is provided on the first connection structure 22 and / or the second connection structure 42. In this case, the subchannel of the energy release channel 50 is a hole structure. The hole structure may be provided on the first connection structure 22, or on the second connection structure 42, or both of the first connection structure 22 and the second connection structure 42.

[0065] like Figures 1 to 3As shown, in this embodiment, the power semiconductor device further includes a closed structure 70, which is arranged on the periphery of the first connection structure 22 and the second connection structure 42 and closes the energy release channel 50. The closed structure 70 can close the energy release channel 50, so that the energy release channel 50 can be separated from the outside of the power semiconductor device, thereby preventing water vapor in the external environment from entering the power semiconductor device and corroding the chip 30, the first electrode structure 10 and the second electrode structure 20, and maintaining the sealing of the power semiconductor device. The setting of the closed structure 70 ensures the sealing and insulation of the device under normal working conditions, and can be destroyed in time when the device fails, providing a channel for the release of energy and reducing the risk of explosion.

[0066] The closing structure 70 is obtained by injection molding.

[0067] like Figures 1 to 3 As shown, in this embodiment, the closed structure 70 includes a closed ring 71, and a receiving groove 72 is provided on the inner wall of the closed ring 71. The first connection structure 22 and the second connection structure 42 are inserted into the receiving groove 72 and are arranged in close contact with the groove wall of the receiving groove 72. By providing the closed ring 71 with the receiving groove 72, the closed ring 71 and the first connection structure 22 and the second connection structure 42 are closely fitted, which not only enhances the sealing performance of the closed structure 70, but also makes the connection between the first connection structure 22 and the second connection structure 42 tighter, and also can close the energy release channel 50, avoiding the energy release channel 50 from being connected to the outside of the device. When the device fails, it can respond quickly, and the energy release is realized by controlling the opening of the closed ring 71, which further improves the safety and reliability of the device.

[0068] During injection molding, the device is in a press-fit state, that is, the device is subjected to pressure, which makes the first connection structure 22 and the second connection structure 42 contact more closely, thereby avoiding the probability of the molding compound entering the sub-channel 51 when the closed ring 71 is formed by injection molding.

[0069] Under the action of the injection mold, the molding compound can be limited, and under the cooperation of the first connecting structure 22 and the second connecting structure 42, a closed ring 71 with a receiving groove 72 can be formed.

[0070] like Figures 1 to 3As shown, in this embodiment, the closed ring 71 includes a mounting plate 711, a first extension plate 712 disposed at a first end of the mounting plate 711, and a second extension plate 713 disposed at a second end of the mounting plate 711, the first extension plate 712 and the second extension plate 713 both extend toward the electrode body 21, and a receiving groove 72 is formed between the mounting plate 711, the first extension plate 712, and the second extension plate 713. The first extension plate 712 and the second extension plate 713 can clamp the first connection structure 22 and the second connection structure 42, and the mounting plate 711 can connect the first extension plate 712 and the second extension plate 713, so that the connection between the first connection structure 22 and the second connection structure 42 is more stable, and the energy release channel 50 can be closed.

[0071] The first extension plate 712 and the second extension plate 713 both extend in the radial direction of the electrode body 21 .

[0072] like Figures 1 to 3 As shown, in this embodiment, the material of the closed ring 71 is non-metallic. Such a configuration not only reduces the weight of the closed ring 71, but also improves the corrosion resistance and insulation of the power semiconductor device.

[0073] like Figure 2 , Figure 4 as well as Fig. 9 As shown, in this embodiment, a cavity 411 is provided in the tube shell 41. When energy is released, the cavity 411 can absorb part of the energy, provide additional buffer space for the energy, further improve the anti-explosion performance of the power semiconductor device, absorb and disperse the explosion energy when the device fails, effectively reduce the stress concentration of the tube shell 41, improve the anti-explosion performance of the device, and significantly reduce the explosion risk of the device caused by internal energy accumulation.

[0074] The width of the cavity 411 is between 3 mm and 6 mm, and may be 3 mm, 3.5 mm, 4 mm, 4.5 mm, 5 mm or 6 mm.

[0075] like Figure 2 , Figure 4 , Figure 5 , Fig. 9 as well as Fig.12 As shown, in this embodiment, the tube shell 41 includes a first shell 412 and a second shell 413 connected to the first shell 412, and a cavity 411 is formed between the first shell 412 and the second shell 413. By providing the first shell 412 and the second shell 413 and connecting the first shell 412 and the second shell 413 by docking, the tube shell 41 with the cavity 411 is easier to process.

[0076] The material of the tube shell 41 is ceramic, that is, the material of the first shell 412 is ceramic, and the material of the second shell 413 is ceramic.

[0077] like Figure 2 , Figure 4 as well as Fig. 9 As shown, in this embodiment, the tube shell 41 further includes a first connection layer 414 and a second connection layer 415, the first connection layer 414 is arranged on the first shell 412, the second connection layer 415 is arranged on the second shell 413, and the first connection layer 414 and the second connection layer 415 are connected to connect the first shell 412 and the second shell 413. By providing the first connection layer 414 and the second connection layer 415, and connecting the first connection layer 414 and the second connection layer 415, it is possible to make the connection between the first shell 412 and the second shell 413 easier.

[0078] like Figure 4 As shown, in this embodiment, the first connection layer 414 is a first metal layer, and the second connection layer 415 is a second metal layer. The first metal layer and the second metal layer are easily connected, and thus the first shell 412 and the second shell 413 are easily connected.

[0079] The first metal layer can be connected to the first shell 412 , and the second metal layer can be connected to the second shell 413 .

[0080] like Figures 2 to 4 As shown, in this embodiment, the first housing 412 includes a first annular plate 4121 and a first outer convex plate 4122 disposed on the first annular plate 4121, and a first connecting layer 414 is disposed on the side of the first outer convex plate 4122 facing the second housing 413, so that the first outer convex plate 4122 is connected to the second housing 413. By providing the first outer convex plate 4122, a gap can be provided between the first annular plate 4121 and the second housing 413, which facilitates the formation of the cavity 411. The first connecting layer 414 is disposed on the first outer convex plate 4122, which facilitates the connection between the first outer convex plate 4122 and the second housing 413.

[0081] like Figures 2 to 4As shown, in this embodiment, the second housing 413 includes a second annular plate 4131 and a second outer convex plate 4132 disposed on the second annular plate 4131, the second outer convex plate 4132 and the first outer convex plate 4122 are spaced apart, and the second connecting layer 415 is disposed on the side of the second outer convex plate 4132 facing the first housing 412, so that the second outer convex plate 4132 is connected to the first housing 412. By providing the second outer convex plate 4132, a gap can be provided between the second annular plate 4131 and the second housing 413, which further facilitates the formation of the cavity 411. The second connecting layer 415 is disposed on the second outer convex plate 4132, which facilitates the connection between the second outer convex plate 4132 and the first housing 412, and then under the action of the first outer convex plate 4122 and the second outer convex plate 4132, a cavity is formed between the first housing 412 and the second housing 413.

[0082] The first housing 412 further includes a third outer convex plate 4123 disposed on the first annular plate 4121 , and the third outer convex plate 4123 is connected to the second outer convex plate 4132 .

[0083] The first housing 412 further includes a third connection layer, which is disposed on a side of the third outer convex plate 4123 facing the second housing 413. The third connection layer is a third metal layer. The third connection layer is connected to the second connection layer so that the second outer convex plate 4132 is connected to the third outer convex plate 4123, thereby making the connection between the first housing 412 and the second housing 413 more stable.

[0084] The second housing 413 further includes a fourth outer convex plate 4133 disposed on the second annular plate 4131 , and the fourth outer convex plate 4133 is connected to the first outer convex plate 4122 .

[0085] The second housing 413 further includes a fourth connection layer, which is disposed on the side of the fourth outer convex plate 4133 facing the first housing 412. The fourth connection layer is a fourth metal layer. The fourth connection layer is connected to the first connection layer to connect the fourth outer convex plate 4133 to the first outer convex plate 4122, thereby making the connection between the first housing 412 and the second housing 413 more stable.

[0086] It should be noted that, in this embodiment, the thickness of the second outer convex plate 4132 and the third outer convex plate 4123 is between 1 mm and 1.5 mm, specifically, 1 mm, 1.2 mm, 1.3 mm or 1.5 mm.

[0087] It should be noted that, in this embodiment, the wall thickness of the first annular plate 4121 is between 1 mm and 1.5 mm, specifically, 1 mm, 1.2 mm, 1.3 mm or 1.5 mm.

[0088] like Fig.12As shown in FIG. 1 , in other embodiments, different from this embodiment, the first housing 412 only includes the first annular plate 4121, and the first outer convex plate 4122 and the third outer convex plate 4123 are not provided, and the second outer convex plate 4132 and the fourth outer convex plate 4133 are provided on the second housing 413. The two ends of the first annular plate 4121 are respectively connected to the second outer convex plate 4132 and the fourth outer convex plate 4133 of the second housing 413. The first connecting layer 414 and the second connecting layer 415 are respectively provided at the two ends of the first annular plate 4121.

[0089] like Fig.12 As shown in FIG. 2 , in other embodiments, the difference from this embodiment is that: the first housing 412 includes a first annular plate 4121 and a third outer convex plate 4123, the first outer convex plate 4122 is not provided, and the second outer convex plate 4132 and the fourth outer convex plate 4133 are both provided on the second housing 413. The first connecting layer 414 is provided at one end of the first annular plate 4121 close to the fourth outer convex plate 4133, and the fourth connecting layer is correspondingly provided on the fourth outer convex plate 4133.

[0090] like Fig.12 c, in other embodiments, different from this embodiment, the first housing 412 includes a first annular plate 4121 and a first outer convex plate 4122, and the third outer convex plate 4123 is not provided, and the second outer convex plate 4132 and the fourth outer convex plate 4133 are both provided on the second housing 413. The third connection layer is provided at one end of the first annular plate 4121 close to the second outer convex plate 4132, and the second connection layer 415 is correspondingly provided on the second outer convex plate 4132.

[0091] like Fig.12 d, in other embodiments, different from this embodiment, the first housing 412 includes a first annular plate 4121 and a third outer convex plate 4123, and the first outer convex plate 4122 is not provided, and the second housing 413 includes a second annular plate 4131 and a fourth outer convex plate 4133, and the second outer convex plate 4132 is not provided. The first connecting layer 414 is provided at one end of the first annular plate 4121 close to the fourth outer convex plate 4133, and the fourth connecting layer is correspondingly provided on the fourth outer convex plate 4133. The second connecting layer 415 is provided at one side of the second annular plate 4131 close to the first annular plate 4121, and is provided correspondingly to the third connecting layer.

[0092] like Fig.12 As shown in FIG. 4 , in other embodiments, different from this embodiment, the first housing 412 includes a first annular plate 4121, a first outer convex plate 4122 and a third outer convex plate 4123, the second housing 413 includes a second annular plate 4131 and a fourth outer convex plate 4133, and the second outer convex plate 4132 is not provided. The second connecting layer 415 is provided on a side of the second annular plate 4131 close to the first annular plate 4121, and is provided corresponding to the third connecting layer.

[0093] like Fig.12 f, in other embodiments, different from this embodiment, the first housing 412 includes a first annular plate 4121 and a first outer convex plate 4122, and the third outer convex plate 4123 is not provided, and the second housing 413 includes a second annular plate 4131 and a second outer convex plate 4132, and the fourth outer convex plate 4133 is not provided. The fourth connection layer is provided on a side of the second annular plate 4131 close to the first annular plate 4121, and is provided correspondingly to the first connection layer 414. The third connection layer is provided on one end of the first annular plate 4121 close to the second outer convex plate 4132, and the second connection layer 415 is provided correspondingly on the second outer convex plate 4132.

[0094] like Fig.12 As shown in FIG. 5 , in other embodiments, different from this embodiment, the first housing 412 includes a first annular plate 4121, a first outer convex plate 4122 and a third outer convex plate 4123, the second housing 413 includes a second annular plate 4131 and a second outer convex plate 4132, and the fourth outer convex plate 4133 is not provided. The fourth connection layer is provided on a side of the second annular plate 4131 close to the first annular plate 4121, and is provided corresponding to the first connection layer 414.

[0095] like Fig.12 As shown in FIG. 1 , in other embodiments, different from this embodiment, the first housing 412 includes a first annular plate 4121, a first outer convex plate 4122 and a third outer convex plate 4123, and the second housing 413 includes only a second annular plate 4131. The second connection layer 415 and the fourth connection layer are arranged at intervals on a side of the second annular plate 4131 close to the first annular plate 4121, the first connection layer 414 is arranged corresponding to the fourth connection layer, and the second connection layer 415 is arranged corresponding to the third connection layer.

[0096] like Fig.12 As shown in FIG. 1 , in other embodiments, different from this embodiment, the first housing 412 includes a first annular plate 4121 and a first outer convex plate 4122, and the third outer convex plate 4123 is not provided, and the second housing 413 includes a second annular plate 4131, a second outer convex plate 4132, and a fourth outer convex plate 4133. The third connection layer is provided on a side of the first annular plate 4121 close to the second annular plate 4131, and is provided corresponding to the second connection layer 415.

[0097] like Fig.12As shown in FIG. 1 , in other embodiments, the difference from this embodiment is that: the first housing 412 includes a first annular plate 4121 and a third outer convex plate 4123, and the first outer convex plate 4122 is not provided; the second housing 413 includes a second annular plate 4131 and a fourth outer convex plate 4133, and the second outer convex plate 4132 is not provided. The first connecting layer 414 is provided on a side of the first annular plate 4121 close to the second annular plate 4131, and is provided correspondingly to the fourth connecting layer. The second connecting layer 415 is provided on a side of the second annular plate 4131 close to the first annular plate 4121, and is provided correspondingly to the first connecting layer 414.

[0098] like Fig.12 As shown in FIG. 1 , in other embodiments, different from this embodiment, the first housing 412 includes a first annular plate 4121 and a third outer convex plate 4123, the first outer convex plate 4122 is not provided, and the second housing 413 includes a second annular plate 4131, a second outer convex plate 4132 and a fourth outer convex plate 4133. The first connecting layer 414 is provided on one side of the first annular plate 4121 close to the second annular plate 4131, and is provided corresponding to the fourth connecting layer.

[0099] like Figure 2 As shown, in this embodiment, the first shell 412 is located inside the second shell 413, and an annular accommodating cavity 80 is provided between the chip 30 and the first shell 412. By providing the annular accommodating cavity 80, a gap is provided between the chip 30 and the first shell 412, thereby extending the energy transmission path to consume part of the energy, and avoiding that when the chip 30 and the first shell 412 are fitted together, the released energy directly impacts the first shell 412, causing damage to the first shell 412.

[0100] The annular accommodation cavity 80 of the power semiconductor device is formed by the first electrode structure 10 , the second electrode structure 20 , the chip 30 and the inner wall of the tube shell 41 .

[0101] like Fig. 9 As shown, in this embodiment, a through hole 416 is provided on the tube shell 41, and the through hole 416 communicates the annular accommodation cavity 80 and the outside of the tube shell 41. In the stacking direction of the first electrode structure 10 and the second electrode structure 20, the minimum distance between the through hole 416 and the cavity 411 is between 0.5 mm and 3 mm. Through the through hole 416, the insulating gas can be input into the annular accommodation cavity 80, thereby protecting the chip 30, the first electrode structure 10 and the second electrode structure 20. By limiting the minimum distance between the through hole 416 and the cavity 411, the through hole 416 and the cavity 411 can have a sufficient distance, thereby making the part of the tube shell 41 between the through hole 416 and the cavity 411 have sufficient structural strength, thereby preventing the part of the tube shell 41 between the through hole 416 and the cavity 411 from being broken.

[0102] like Figure 4 As shown, the minimum distance between the through hole 416 and the cavity 411 is L, and L can be 0.5 mm, 1 mm, 1.5 mm, 2 mm, 2.5 mm or 3 mm. Such a setting can ensure the structural strength of the tube shell 41.

[0103] Preferably, the minimum distance between the through hole 416 and the cavity 411 is between 1 mm and 2 mm.

[0104] The minimum distance between the through hole 416 and the cavity 411 is the minimum distance between the hole wall of the through hole 416 and the side wall of the cavity 411 close to the second connection structure 42 .

[0105] The diameter of the through hole 416 is between 1 mm and 3 mm, specifically, it can be 1 mm, 1.5 mm, 2 mm, 2.5 mm or 3 mm. Preferably, the diameter of the through hole is between 1.5 mm and 2.5 mm.

[0106] In this embodiment, the through hole 416 includes a first sub-hole and a second sub-hole. The first sub-hole and the second sub-hole are connected.

[0107] The first sub-hole is provided on the first outer convex plate 4122 of the first housing 412, and the first sub-hole extends radially of the first housing 412. The second sub-hole is provided on the fourth outer convex plate 4133 of the second housing 413, and the second sub-hole extends radially of the second housing 413. After the insulating gas is filled, the through hole 416 is sealed.

[0108] The minimum distance between the hole wall of the through hole 416 and the end of the tube shell 41 close to the second connection structure 42 is also L. In this way, the structural strength of the tube shell 41 can be ensured.

[0109] In other embodiments, the first sub-hole is disposed on the third outer convex plate 4123 of the first shell 412 , and the second sub-hole is disposed on the second outer convex plate 4132 of the second shell 413 .

[0110] like Fig.10 and Fig.11 As shown, in this embodiment, the power semiconductor device further includes a buffer structure 90, which is located between the chip 30 and the tube shell 41, and the surface of the buffer structure 90 away from the first shell 412 has a plurality of protrusions 91. By providing the buffer structure 90, the energy released by the power semiconductor device when the chip 30 is short-circuited can be absorbed. The provision of the plurality of protrusions 91 enables the buffer structure 90 to absorb more energy.

[0111] The buffer structure 90 is located on a side of the first housing 412 away from the second housing 413 .

[0112] The buffer structure 90 is disposed in the annular accommodating cavity 80 .

[0113] In the stacking direction of the first electrode structure 10 and the second electrode structure 20 , the buffer structure 90 and the through hole 416 are spaced apart to prevent the buffer structure 90 from interfering with the through hole 416 and affecting the entry of the insulating gas.

[0114] In other embodiments, the buffer structure 90 may also be spaced apart from the first shell 412 and located on a side of the first shell 412 away from the second shell 413 .

[0115] It should be noted that the power semiconductor device also includes an energy absorbing structure, which includes an energy absorbing ring, which is arranged in the cavity 411. The energy absorbing ring is provided with a plurality of through holes, which penetrate the thickness direction of the energy absorbing ring. Such a setting enables the energy absorbing ring to absorb the energy transmitted to the cavity 411 in the cavity 411.

[0116] The material of the energy absorbing ring is the same as that of the buffer structure 90. The cross section of the through hole can be circular, hexagonal or other polygonal.

[0117] The energy absorbing structure further includes a plurality of elastic columns, which are arranged in one-to-one correspondence with the plurality of through holes and are located in the through holes, so that the energy absorbing effect of the energy absorbing structure can be further improved.

[0118] There is a gap between the outer periphery of the elastic column and the inner wall of the through hole, which facilitates the deformation of the structure of the energy absorbing ring and squeezes the elastic column, so that the energy absorbing effect of the energy absorbing structure is better.

[0119] When manufacturing the semiconductor device, firstly, a plurality of elastic columns are placed in the plurality of through holes respectively, then the energy absorbing structure is placed in the second shell 413 , and then the first shell 412 and the second shell 413 are connected.

[0120] The structure and technical effects of the preferred embodiment of the power semiconductor device of the present application are as follows:

[0121] The power semiconductor device of this embodiment proposes a packaging solution for the power semiconductor device, which improves the explosion resistance of the device while ensuring the packaging requirements such as tube shell insulation and sealing by providing an explosion relief buffer layer (i.e., buffer structure 90), an explosion relief cavity (i.e., cavity 411), and improving the tube shell sealing form to an umbrella skirt plastic seal (i.e., closed ring 71).

[0122] The power semiconductor device of this embodiment has a first explosion relief structure, a second explosion relief structure and a third explosion relief structure, specifically:

[0123] (1) The first explosion relief structure: The space between the inner wall of the tube shell 41 of the power semiconductor device of this embodiment and the chip 30 is filled with a buffer structure 90 with a non-smooth surface. The material of the buffer structure 90 is an energy-absorbing material, including but not limited to porous materials such as polyurethane, porous silicon, etc. The inner wall surface of the material has a convex structure (i.e., a convex portion 91), including but not limited to a pyramid, a sphere, etc. The corresponding mechanism is to regulate the direction of the energy shock wave, realize the regulation of the direction of the energy shock wave, and realize energy neutralization inside the buffer structure 90 to the greatest extent. At the same time, the outer surface of the tube shell 41 is provided with an explosion-proof coating, such as a polyurea coating, which is coated on the outer surface of the tube shell by spraying.

[0124] (2) Second explosion relief structure: The tube shell 41 of the power semiconductor device of this embodiment is different from the traditional one-piece ceramic ring, and is composed of an outer ring (i.e., the second shell 413) and an inner ring (i.e., the first shell 412). Among them, after the inner ring and the outer ring are combined and connected, there is an explosion relief cavity (i.e., the cavity 411) in the middle. The width of the explosion relief cavity (i.e., the distance between the two surfaces of the cavity 411 in the direction from the inner ring to the outer ring) is between 3mm and 6mm, and the distance between the explosion relief cavity and the inner surface of the ceramic ring (i.e., the wall thickness of the first annular plate 4121) and the lower surface of the ceramic ring is between 1mm and 1.5mm (i.e., the thickness of the second outer convex plate 4132). Among them, the contact surfaces of the inner ring and the outer ring are metallized (i.e., the first connection layer 414, the second connection layer 415, the third connection layer and the fourth connection layer). The metallization material is generally nickel, copper, tin and other metals. The purpose is to achieve high-temperature vacuum brazing connection; the welding process parameters are silver-copper-titanium active brazing alloy (AgCuTi 4.5 ), the brazing temperature range is 830 to 930 ° C. After brazing, the inner ring and outer ring replace the ceramic ring in the traditional packaging solution as an integral component and complete the remaining tube shell assembly.

[0125] (3) The third explosion relief structure: The tube shell sealing of the power semiconductor device of this embodiment is different from the traditional cold pressure welding process, and the tube shell sealing is achieved by the plastic sealing process. Among them, the tube shell sealing process is carried out in three steps: argon arc welding fixation, plastic sealing and filling with insulating gas. The side wall of the tube shell needs to reserve an air filling hole (i.e., through hole 416). Argon arc welding fixation requires a specific press-fitting fixture to make the device in the fixing process in a press-fit state, and the pressure is between 10% and 20% of the device installation pressure; and the welding position is at 60° intervals, the welding length is 5% to 10% of the circumference of the umbrella skirt (i.e., the first connecting structure 22), and the remaining area is not welded. Among them, the device is still in a press-fitting state during the injection molding process, and the pressure is 10% to 20% of the device installation pressure. The melted plastic sealing filler is injected into the connection of the tube shell umbrella skirt (i.e., the connection between the first connecting structure 22 and the second connecting structure 42) through the plastic sealing mold, and degassed and cured at high temperature to form a closed ring 71. The plastic sealing filler is epoxy plastic sealing material, such as bisphenol F epichlorohydrin epoxy resin. The plastic sealing temperature is 175℃, the pressure is 7MPa, and the plastic sealing time is 90s. The insulating gas is filled through the reserved air holes, and the sealing is completed by argon arc welding process. The insulating gas type is: nitrogen or sulfur hexafluoride, and the filling pressure is: 75 to 85kPa. The overall sealing of the device must meet 1E -7 Pa·m 3 / s.

[0126] The existing technology uses a ceramic tube shell sealing structure to seal the explosion energy inside the tube shell by "blocking". As the power level of the device increases, the failure energy increases exponentially with the operating voltage. The explosion power will only become greater and greater, and it cannot play an effective anti-explosion role.

[0127] This solution, by adopting a "venting" approach, releases the explosion energy in three stages (i.e., the first explosion-venting structure, the second explosion-venting structure, and the third explosion-venting structure), which greatly reduces the negative impact caused by the explosion of the device and solves the problem that the existing packaging structure does not have explosion-proof performance from a packaging perspective.

[0128] The present invention provides an explosion-proof packaging scheme for power devices and a tube shell structure design method; a three-stage explosion relief scheme combining a buffer layer, a cavity and a plastic seal (i.e., a first explosion relief structure, a second explosion relief structure and a third explosion relief structure) is proposed, which improves the explosion relief capability of the device and enhances the application reliability of the device without changing the insulation and sealing performance of the tube shell.

[0129] like Fig.13 As shown, the processing method of the power semiconductor device of this embodiment is used to process the above-mentioned power semiconductor device, and the processing method includes:

[0130] Step S10: obtaining the first electrode structure 10 and the second electrode structure 20, wherein the electrode body 21 and the first connection structure 22 are connected to form the second electrode structure 20;

[0131] Step S20: obtaining a tube shell 41 and a second connection structure 42, and connecting the tube shell 41 and the second connection structure 42 to obtain a housing assembly 40;

[0132] Step S30: connecting the tube shell 41 to the first electrode structure 10;

[0133] Step S40: electrically connecting the chip 30 to the first electrode structure 10, and placing the chip 30 in the housing assembly 40;

[0134] Step S50: electrically connecting the electrode body 21 to the chip 30, and locating the chip 30 between the first electrode structure 10 and the electrode body 21;

[0135] Step S60 : connecting the first connection structure 22 and the second connection structure 42 , and setting an energy release channel 50 between the first connection structure 22 and the second connection structure 42 .

[0136] Through the above arrangement, the first electrode structure 10, the second electrode structure 20 and the tube shell 41 can be obtained. The tube shell 41 is connected to the first electrode structure 10, the chip 30 is electrically connected to the first electrode structure 10, and the chip 30 is connected to the electrode body 21. An energy release channel 50 is set between the first connection structure 22 and the second connection structure 42 to facilitate the release of energy.

[0137] In other embodiments, an energy release channel 50 is provided on the first connection structure 22 and / or the second connection structure 42 , and the first connection structure 22 and the second connection structure 42 are connected.

[0138] The step of providing an energy release channel on the first connection structure 22 includes:

[0139] A plurality of hole structures are made on the first connection structure 22 .

[0140] Through the above arrangement, an energy release channel can be formed on the first connecting structure 22 .

[0141] The step of providing an energy release channel on the second connection structure 42 includes:

[0142] A plurality of hole structures are made on the second connection structure 42 .

[0143] Through the above arrangement, an energy release channel can be formed on the second connection structure 42 .

[0144] In this embodiment, step S20: the step of obtaining the tube shell 41 includes:

[0145] The first shell 412 and the second shell 413 are obtained respectively;

[0146] The first shell 412 and the second shell 413 are butt-connected.

[0147] Through the above arrangement, the first shell 412 and the second shell 413 can be obtained, and the first shell 412 and the second shell 413 can be connected to obtain the tube shell 41.

[0148] In this embodiment, the steps before docking the first shell 412 and the second shell 413 include:

[0149] forming a first connection layer 414 on the first outer convex plate 4122;

[0150] A second connection layer 415 is formed on the second outer convex plate 4132 .

[0151] Through the above arrangement, a first connection layer 414 can be formed on the first outer convex plate 4122 , and a second connection layer 415 can be formed on the second outer convex plate 4132 , so as to facilitate the docking connection between the first shell 412 and the second shell 413 .

[0152] In this embodiment, the step of docking the first shell 412 and the second shell 413 includes:

[0153] The first connection layer 414 and the second connection layer 415 are connected to connect the first shell 412 and the second shell 413.

[0154] Through the above arrangement, the first shell 412 and the second shell 413 can be connected to obtain the tube shell 41.

[0155] In this embodiment, the step of connecting the first connection layer 414 and the second connection layer 415 includes:

[0156] Under the first preset process conditions, the first connection layer 414 and the second connection layer 415 are connected.

[0157] Through the above configuration, the first connection layer 414 and the second connection layer 415 can be connected.

[0158] The first preset process condition is: brazing under vacuum conditions using silver-copper-titanium active brazing filler metal at a temperature range of 830 to 930°C.

[0159] In this embodiment, the steps before step S30: connecting the tube shell 41 to the first electrode structure 10 include:

[0160] Obtaining a buffer structure 90;

[0161] The buffer structure 90 is connected to the tube case 41 .

[0162] Through the above configuration, the buffer structure 90 can be connected to the inner wall of the tube shell 41 .

[0163] In this embodiment, step S60: the step of connecting the first connection structure 22 and the second connection structure 42 includes:

[0164] The third connection structure 60 is disposed between the first connection structure 22 and the second connection structure 42 , and forms an energy release channel 50 .

[0165] Through the above arrangement, the third connection structure 60 can connect the first connection structure 22 and the second connection structure 42 while forming the energy release channel 50 .

[0166] In this embodiment, the step of providing the third connection structure 60 between the first connection structure 22 and the second connection structure 42 includes:

[0167] The first connection structure 22 and the second connection structure 42 are connected under a second preset process condition to obtain a plurality of connection portions 61 .

[0168] Through the above arrangement, a plurality of connection portions 61 can be obtained to obtain the third connection structure 60 and form the sub-channel 51 at the same time.

[0169] The second preset process condition is: use a press-fit fixture to put the fixing process device in a press-fit state, the pressure is between 10% and 20% of the device installation pressure, and use argon arc welding process for welding.

[0170] In this embodiment, step S60: the steps after connecting the first connection structure 22 and the second connection structure 42 include:

[0171] Under the third preset process condition, a closed structure 70 is obtained.

[0172] Through the above arrangement, a closed structure 70 can be obtained to close the energy release channel 50 .

[0173] The third preset process condition is: using a molding mold to inject melted molding filler into the connection between the first connection structure 22 and the second connection structure 42, and degassing and curing at high temperature. The molding filler is an epoxy molding material such as bisphenol F epichlorohydrin epoxy resin. The molding temperature is 175°C, the pressure is 7MPa, and the molding time is 90s.

[0174] In the description of the present invention, it is necessary to understand that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the devices or elements referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention. The directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0175] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used herein are interpreted accordingly.

[0176] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the present invention.

[0177] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A power semiconductor device, characterized in that: include: A first electrode structure (10) and a second electrode structure (20), wherein the first electrode structure (10) and the second electrode structure (20) are arranged at an interval, and the second electrode structure (20) comprises an electrode body (21) and a first connection structure (22) connected to the electrode body (21); a chip (30) disposed between the first electrode structure (10) and the electrode body (21), and electrically connected to both the first electrode structure (10) and the electrode body (21); A housing component (40), the housing component (40) comprising a tube shell (41) and a second connection structure (42) arranged on the tube shell (41), the tube shell (41) being arranged around the periphery of the chip (30), the tube shell (41) being connected to the first electrode structure (10), and the second connection structure (42) being connected to the first connection structure (22); The energy release channel (50) is arranged on the first connection structure (22) and / or the second connection structure (42), or is arranged between the first connection structure (22) and the second connection structure (42).

2. The power semiconductor device according to claim 1, characterized in that: The power semiconductor device further comprises a third connection structure (60), wherein the third connection structure (60) is arranged between the first connection structure (22) and the second connection structure (42).

3. The power semiconductor device according to claim 2, characterized in that: The energy release channel (50) is arranged between the first connection structure (22) and the second connection structure (42), the third connection structure (60) comprises at least one connection portion (61), and the energy release channel (50) comprises at least one sub-channel (51); Wherein, when the third connection structure (60) includes a connection portion (61) and the energy release channel (50) includes a sub-channel (51), the sub-channel (51) is formed between two ends of the connection portion (61) and between the first connection structure (22) and the second connection structure (42); When the third connection structure (60) includes a plurality of connection portions (61) and the energy release channel (50) includes a plurality of sub-channels (51), the plurality of connection portions (61) are arranged at intervals along the circumference of the first connection structure (22), and one sub-channel (51) is formed between any two adjacent connection portions (61) and between the first connection structure (22) and the second connection structure (42).

4. The power semiconductor device according to claim 1, characterized in that: The power semiconductor device further comprises a closed structure (70), wherein the closed structure (70) is arranged on the periphery of the first connection structure (22) and the second connection structure (42) and closes the energy release channel (50).

5. The power semiconductor device according to claim 4, characterized in that: The closed structure (70) comprises a closed ring (71), an inner wall of the closed ring (71) being provided with a receiving groove (72), the first connecting structure (22) and the second connecting structure (42) being inserted into the receiving groove (72) and being arranged in close contact with the groove wall of the receiving groove (72).

6. The power semiconductor device according to claim 5, characterized in that: The closed ring (71) comprises a mounting plate (711), a first extension plate (712) arranged at a first end of the mounting plate (711), and a second extension plate (713) arranged at a second end of the mounting plate (711), the first extension plate (712) and the second extension plate (713) both extending toward the electrode body (21), and the accommodating groove (72) is formed between the mounting plate (711), the first extension plate (712), and the second extension plate (713).

7. The power semiconductor device according to claim 5, characterized in that: The material of the closed ring (71) is non-metal.

8. The power semiconductor device according to any one of claims 1 to 7, characterized in that: A cavity (411) is provided in the tube shell (41).

9. The power semiconductor device according to claim 8, characterized in that: The tube shell (41) comprises a first shell (412) and a second shell (413) butt-connected to the first shell (412), and the cavity (411) is formed between the first shell (412) and the second shell (413).

10. The power semiconductor device according to claim 9, characterized in that: The tube shell (41) further comprises a first connection layer (414) and a second connection layer (415); the first connection layer (414) is arranged on the first shell (412); the second connection layer (415) is arranged on the second shell (413); the first connection layer (414) and the second connection layer (415) are connected to connect the first shell (412) and the second shell (413).

11. The power semiconductor device according to claim 10, characterized in that: The first connection layer (414) is a first metal layer, and the second connection layer (415) is a second metal layer.

12. The power semiconductor device according to claim 10, characterized in that: The first shell (412) includes a first annular plate (4121) and a first outer convex plate (4122) arranged on the first annular plate (4121), and the first connecting layer (414) is arranged on a side of the first outer convex plate (4122) facing the second shell (413) so as to connect the first outer convex plate (4122) to the second shell (413).

13. The power semiconductor device according to claim 12, characterized in that: The second shell (413) includes a second annular plate (4131) and a second outer convex plate (4132) arranged on the second annular plate (4131), the second outer convex plate (4132) and the first outer convex plate (4122) are arranged at intervals, and the second connecting layer (415) is arranged on the side of the second outer convex plate (4132) facing the first shell (412) so as to connect the second outer convex plate (4132) to the first shell (412).

14. The power semiconductor device according to claim 9, characterized in that: The first shell (412) is located on the inner side of the second shell (413), and an annular accommodating cavity (80) is provided between the chip (30) and the first shell (412).

15. The power semiconductor device according to claim 14, characterized in that: A through hole (416) is provided on the tube shell (41), the through hole (416) communicating with the annular accommodating cavity (80) and the outside of the tube shell (41), and in the stacking direction of the first electrode structure (10) and the second electrode structure (20), the minimum distance between the through hole (416) and the cavity (411) is between 0.5 mm and 3 mm.

16. The power semiconductor device according to claim 9, characterized in that: The power semiconductor device further comprises a buffer structure (90) located on a side of the first shell (412) away from the second shell (413); a surface of the buffer structure (90) away from the first shell (412) comprises a plurality of protrusions (91).

17. A method for processing a power semiconductor device, characterized in that: Used for processing a power semiconductor device according to any one of claims 1 to 16, the processing method comprising: Obtaining a first electrode structure (10) and a second electrode structure (20), wherein the electrode body (21) and the first connecting structure (22) are connected to form the second electrode structure (20); Connecting the tube shell (41) and the second connection structure (42) to obtain a housing assembly (40); connecting the tube shell (41) to the first electrode structure (10); electrically connecting the chip (30) to the first electrode structure (10), and positioning the chip (30) within the housing component (40); The electrode body (21) is electrically connected to the chip (30), and the chip (30) is located between the first electrode structure (10) and the electrode body (21); An energy release channel (50) is provided on the first connection structure (22) and / or the second connection structure (42), and the first connection structure (22) and the second connection structure (42) are connected; or the first connection structure (22) and the second connection structure (42) are connected, and an energy release channel (50) is provided between the first connection structure (22) and the second connection structure (42).

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