Integrated power semiconductor device and electronic apparatus

Abstract

The invention provides an integrated power semiconductor device and electronic equipment, and the device comprises a first power semiconductor chip which comprises a first thyristor; the conductive layer is located on one side of the first power semiconductor chip, and the conductive layer serves as a cathode of the first power semiconductor chip; the second power semiconductor chip is located on the side, away from the first power semiconductor chip, of the conducting layer, and the first power semiconductor chip and the second power semiconductor chip are connected in series through the conducting layer. According to the invention, the problem of poor performance of the power semiconductor device caused by low space utilization rate due to the fact that the cathode electrode mainly plays a conductive role in the packaging of the existing power semiconductor device is solved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to an integrated power semiconductor device and an electronic device. Background Art

[0002] In the prior art, a power semiconductor device package has only one power semiconductor chip located near the longitudinal center of the package to achieve uniform double-sided heat dissipation. For the existing offset package, the thickness of the anode electrode is reduced and the thickness of the cathode electrode is increased. At the same time, new materials are used to improve the thermal conductivity of the anode electrode. The thermal resistance of the anode electrode is much lower than that of the cathode electrode. The total thermal resistance after parallel connection is determined by the anode electrode. The power semiconductor chip mainly dissipates heat through the anode electrode. The cathode electrode is a solid copper block and only serves as a conductor.

[0003] In traditional power semiconductor device packaging, the cathode electrode mainly plays a conductive role, its space utilization is not high, and the performance of the power semiconductor device is poor. Summary of the invention

[0004] The main purpose of the present application is to provide an integrated power semiconductor device and an electronic device to solve the problem that in the existing power semiconductor device packaging, the cathode electrode mainly plays a conductive role and its space utilization rate is not high, resulting in poor performance of the power semiconductor device.

[0005] In order to achieve the above-mentioned purpose, according to one aspect of the present application, an integrated power semiconductor device is provided, comprising: a first power semiconductor chip, the first power semiconductor chip comprising a first thyristor; a conductive layer, located on one side of the first power semiconductor chip, the conductive layer serving as a cathode of the first power semiconductor chip; a second power semiconductor chip, located on a side of the conductive layer away from the first power semiconductor chip, the first power semiconductor chip and the second power semiconductor chip being connected in series through the conductive layer.

[0006] Optionally, the integrated power semiconductor device further includes: a first electrode located on a side of the first power semiconductor chip away from the conductive layer, the first electrode serving as an anode of the first power semiconductor chip; and a second electrode located on a side of the second power semiconductor chip away from the conductive layer.

[0007] Optionally, the first thyristor is an asymmetric turn-off thyristor, the second power semiconductor chip includes a diode, the conductive layer serves as an anode of the second power semiconductor chip, and the second electrode serves as a cathode of the second power semiconductor chip.

[0008] Optionally, the first thyristor is an asymmetric turn-off thyristor, the second power semiconductor chip includes a second thyristor, the second thyristor is an asymmetric turn-off thyristor, the conductive layer serves as the cathode of the second power semiconductor chip, and the second electrode serves as the anode of the second power semiconductor chip.

[0009] Optionally, the first thyristor is a reverse conducting turn-off thyristor, the second power semiconductor chip includes a second thyristor, the second thyristor is a reverse conducting turn-off thyristor, and the first power semiconductor chip and the second power semiconductor chip are connected in reverse series.

[0010] Optionally, the integrated power semiconductor device also includes: a first molybdenum sheet located between the first electrode and the first power semiconductor chip; a second molybdenum sheet located between the first power semiconductor chip and the conductive layer; a third molybdenum sheet located between the second power semiconductor chip and the conductive layer; and a fourth molybdenum sheet located between the second power semiconductor chip and the second electrode.

[0011] Optionally, the integrated power semiconductor device also includes: a first control component, which is in contact with the first power semiconductor chip, the first control component includes a first gate component, a first gate spoke and a first gate molybdenum sheet, and the first gate spoke is in contact with the first gate molybdenum sheet under the elastic pressure of the first gate component.

[0012] Optionally, the integrated power semiconductor device also includes: a second control component, which is in contact with the second power semiconductor chip, the second control component includes a second gate component, a second gate spoke and a second gate molybdenum sheet, and the second gate spoke is in contact with the second gate molybdenum sheet under the elastic pressure of the second gate component.

[0013] Optionally, the thickness of the conductive layer is greater than the thickness of the first electrode and the thickness of the second electrode.

[0014] According to another aspect of the present application, an electronic device is provided, comprising any one of the integrated power semiconductor devices described above.

[0015] By applying the technical solution of the present application, the integrated power semiconductor device includes a stacked second power semiconductor chip, a conductive layer and a first power semiconductor chip, the first power semiconductor chip and the second power semiconductor chip are connected in series through the conductive layer, and the first power semiconductor chip includes a first thyristor. Compared with the problem that the cathode electrode in the existing power semiconductor device packaging mainly plays a conductive role and its space utilization rate is not high, resulting in poor performance of the power semiconductor device, the present application increases the space utilization rate of the cathode electrode of the first power semiconductor chip by adding a second power semiconductor chip (the first power semiconductor chip and the second power semiconductor chip share the conductive layer) in the position of the cathode electrode of the first power semiconductor chip, that is, the first power semiconductor chip and the second power semiconductor chip are packaged in the same device, so as to more effectively utilize the packaging space, improve the power density and integration of the device, and connect the first power semiconductor chip and the second power semiconductor chip in series through the conductive layer, thereby ensuring good performance of the integrated power semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings constituting part of the present application are used to provide a further understanding of the present application. The exemplary embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0017] Figure 1 A schematic diagram of a package cross-sectional structure of an integrated power semiconductor device provided according to an embodiment of the present application is shown;

[0018] Figure 2 A method according to an embodiment of the present application is shown. Figure 1 The corresponding equivalent circuit diagram of the integrated power semiconductor device;

[0019] Figure 3 A schematic diagram of a cross-sectional structure of another integrated power semiconductor device package provided according to an embodiment of the present application is shown;

[0020] Figure 4 A method according to an embodiment of the present application is shown. Figure 3 The corresponding equivalent circuit diagram of the integrated power semiconductor device;

[0021] Figure 5 Another embodiment of the present application is shown. Figure 3 The corresponding equivalent circuit diagram of the integrated power semiconductor device;

[0022] Figure 6 A schematic diagram of a chip of a reverse conducting turn-off thyristor provided according to an embodiment of the present application is shown;

[0023] Figure 7A schematic diagram of a chip of another reverse conducting turn-off thyristor provided according to an embodiment of the present application is shown.

[0024] The above drawings include the following reference numerals:

[0025] 10. first power semiconductor chip; 101. first thyristor; 11. conductive layer; 12. second power semiconductor chip; 13. first electrode; 14. second electrode; 121. diode; 122. second thyristor; 1011. first asymmetric turn-off thyristor; 1012. first diode; 1221. second asymmetric turn-off thyristor; 1222. second diode; 15. first molybdenum sheet; 16. second molybdenum sheet; 17. third molybdenum sheet; 18. fourth molybdenum sheet; 1 9. First control component; 191. First gate component; 192. First gate spoke; 193. First gate molybdenum sheet; 20. First flange; 21. First ceramic tube shell; 22. Second flange; 23. First ceramic ring; 24. Second ceramic tube shell; 25. First gate connecting ring; 26. Third flange; 27. Second control component; 271. Second gate component; 272. Second gate spoke; 273. Second gate molybdenum sheet; 28. Second ceramic ring; 29. ​​Second gate connecting ring. DETAILED DESCRIPTION

[0026] It should be noted that the following detailed descriptions are illustrative and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.

[0027] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0028] It should be understood that when an element (such as a layer, film, region, or substrate) is described as being "on" another element, the element may be directly on the other element, or there may be intermediate elements. Moreover, in the specification and claims, when it is described that an element is "connected" to another element, the element may be "directly connected" to the other element, or "connected" to the other element through a third element.

[0029] As introduced in the background technology, in the existing power semiconductor device packaging, the cathode electrode mainly plays a conductive role, and its space utilization is not high, resulting in poor performance of the power semiconductor device. To solve the above problems, the embodiments of the present application provide an integrated power semiconductor device and electronic device.

[0030] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0031] The present application embodiment provides an integrated power semiconductor device, such as Figure 1 and Figure 3 As shown, including:

[0032] A first power semiconductor chip 10 , wherein the first power semiconductor chip 10 includes a first thyristor (not shown);

[0033] A conductive layer 11 is located on one side of the first power semiconductor chip 10, and the conductive layer 11 serves as a cathode of the first power semiconductor chip 10;

[0034] The second power semiconductor chip 12 is located on a side of the conductive layer 11 away from the first power semiconductor chip 10 , and the first power semiconductor chip 10 and the second power semiconductor chip 12 are connected in series through the conductive layer 11 .

[0035] In the above embodiment, the integrated power semiconductor device includes a stacked second power semiconductor chip, a conductive layer and a first power semiconductor chip, the first power semiconductor chip and the second power semiconductor chip are connected in series through the conductive layer, and the first power semiconductor chip includes a first thyristor. Compared with the problem that the cathode electrode in the existing power semiconductor device packaging mainly plays a conductive role and its space utilization rate is not high, resulting in poor performance of the power semiconductor device, the present application increases the space utilization rate of the cathode electrode of the first power semiconductor chip by adding a second power semiconductor chip (the first power semiconductor chip and the second power semiconductor chip share the conductive layer) in the position of the cathode electrode of the first power semiconductor chip, that is, the first power semiconductor chip and the second power semiconductor chip are packaged in the same device, so as to more effectively utilize the packaging space, improve the power density and integration of the device, and connect the first power semiconductor chip and the second power semiconductor chip in series through the conductive layer, thereby ensuring good performance of the integrated power semiconductor device.

[0036] Specifically, the first power semiconductor chip in the present application actually refers to the active region of the first power semiconductor chip, and the second power semiconductor chip actually refers to the active region of the second power semiconductor chip.

[0037] In one alternative, Figure 1 and Figure 3 As shown, the integrated power semiconductor device further includes: a first electrode 13, located on a side of the first power semiconductor chip 10 away from the conductive layer 11, and the first electrode 13 serves as an anode of the first power semiconductor chip 10; and a second electrode 14, located on a side of the second power semiconductor chip 12 away from the conductive layer 11. In this embodiment, by providing the first electrode and the second electrode, a clear electrode allocation is provided for the first power semiconductor chip and the second power semiconductor chip, so that the device can form a complete current loop.

[0038] Specifically, a micro temperature sensor, such as a thermistor or a temperature sensor based on semiconductor materials, can be embedded in the conductive layer. These sensors can be connected to an external monitoring circuit to provide real-time feedback of the chip temperature. The external monitoring circuit can be a thermistor-based temperature monitoring circuit capable of temperature monitoring in the prior art.

[0039] Specifically, the thickness of the integrated power semiconductor device of the present application is 20 mm to 50 mm.

[0040] According to some exemplary embodiments of the present application, Figure 1 and Figure 2 As shown, the first thyristor 101 is an asymmetric turn-off thyristor, the second power semiconductor chip 12 includes a diode 121, the conductive layer 11 serves as the anode of the second power semiconductor chip 12, and the second electrode 14 serves as the cathode of the second power semiconductor chip 12. In this embodiment, a reverse-resistance turn-off thyristor is formed by stacking the asymmetric turn-off thyristor and the diode in the vertical direction and connecting them in series through the conductive layer. This structure allows the device to withstand a forward voltage and conduct under gate control. At the same time, due to the presence of the built-in diode, the device can also withstand a reverse voltage without being broken down, thereby improving the voltage compatibility and reliability of the device. In addition, the asymmetric turn-off thyristor has low turn-off loss and can be switched at a high frequency for a long time, thereby improving the switching frequency of the reverse-resistance turn-off thyristor.

[0041] Specifically, an asymmetric turn-off thyristor and a diode are integrated in series in a power semiconductor device. The function of the integrated device is the same as that of a reverse-resistance turn-off thyristor. The asymmetric turn-off thyristor can withstand a forward voltage between the anode and cathode, and the gate can control the forward current conduction state between the anode and cathode. The reverse voltage between the anode and cathode will cause an avalanche breakdown; the reverse-resistance power semiconductor device can withstand forward and reverse voltages between the anode and cathode, but the gate can only control the forward current conduction state between the anode and cathode. The asymmetric turn-off thyristor has low turn-off loss and can be switched at high frequency for a long time. The integrated reverse-resistance power semiconductor device composed of the asymmetric turn-off thyristor and the diode is suitable for use in current source converters with active commutation or mixed commutation.

[0042] In other embodiments, Figure 3 and Figure 4 As shown, the first thyristor 101 is an asymmetric turn-off thyristor, the second power semiconductor chip 12 includes a second thyristor 122, the second thyristor 122 is an asymmetric turn-off thyristor, the conductive layer 11 serves as the cathode of the second power semiconductor chip 12, and the second electrode 14 serves as the anode of the second power semiconductor chip 12. In this embodiment, a power semiconductor device with bidirectional control capability is formed by reversely connecting two asymmetric turn-off thyristors in series, which means that the device can withstand forward and reverse voltages, and the conduction and shutoff of the current can be controlled by gate signals in both directions. The solution of integrating two asymmetric turn-off thyristors reduces the demand for external thyristors, simplifies the design of external circuits, reduces costs, and improves the integration of the device and the compactness of the system.

[0043] Specifically, the first thyristor (i.e., an asymmetric turn-off thyristor) and the second thyristor (i.e., an asymmetric turn-off thyristor) are integrated in a power semiconductor device connected in reverse series, and the function is the same as that of a semi-integrated bidirectional turn-off thyristor. The integrated device can withstand forward and reverse voltages, and the two gates can respectively control the current conduction state in two directions. It is suitable for converters such as matrix converters that use semi-integrated bidirectional turn-off thyristors.

[0044] According to other exemplary embodiments of the present application, Figure 3 and Figure 5 As shown, the first thyristor 101 is a reverse conducting turn-off thyristor, the second power semiconductor chip 12 includes a second thyristor 122, the second thyristor 122 is a reverse conducting turn-off thyristor, and the first power semiconductor chip 10 is reversely connected in series with the second power semiconductor chip 12. In this embodiment, a significant feature of the reverse conducting turn-off thyristors is that they can not only be turned on and off by gate control under forward voltage, but also withstand reverse voltage in the off state and work in reverse conduction mode. When two reverse conducting turn-off thyristors are stacked in reverse series, this structure can achieve bidirectional power control and voltage tolerance, which enables the entire device to work in the forward and reverse modes of the circuit, simplifies circuit design, and improves system integration.

[0045] Specifically, a power semiconductor device consisting of a first thyristor (reverse conducting turn-off thyristor) and a second thyristor (reverse conducting turn-off thyristor) integrated in reverse series has the same function as a fully integrated bidirectional turn-off thyristor. The integrated device can withstand forward and reverse voltages, and the two gates can respectively control the current conduction state in two directions. It is suitable for converters using bidirectional power semiconductor devices such as matrix converters.

[0046] Specifically, Figure 5 As shown, the first thyristor 101 (i.e., reverse conducting turn-off thyristor) is composed of a first asymmetric turn-off thyristor 1011 and a first diode 1012 connected in reverse parallel, and the second thyristor 122 (i.e., reverse conducting turn-off thyristor) is composed of a second asymmetric turn-off thyristor 1221 and a second diode 1222 connected in reverse parallel. In other words, the power semiconductor device composed of the first asymmetric turn-off thyristor and the second asymmetric turn-off thyristor integrated in reverse series, after each of them is connected in reverse parallel with a diode externally, has the same function as a fully integrated bidirectional turn-off thyristor.

[0047] Specifically, the chip schematic diagram of the reverse conducting turn-off thyristor is as follows: Figure 6 As shown, an asymmetric turn-off thyristor (a first asymmetric turn-off thyristor 1011 or a second asymmetric turn-off thyristor 1221) and an anti-parallel diode (a first diode 1012 or a second diode 1222) are integrated on the same chip. A schematic diagram of a chip of a reverse-conducting turn-off thyristor can also be shown as Figure 7 As shown, also known as BGCT (Bi-mode GCT), the cells of the asymmetric turn-off thyristor device (the first asymmetric turn-off thyristor 1011 or the second asymmetric turn-off thyristor 1221) and the cells of the anti-parallel diode (the first diode 1012 or the second diode 1222) are arranged at intervals.

[0048] Specifically, the integrated power semiconductor device (fully integrated bidirectional turn-off thyristor) of the present application is relatively simple to implement.

[0049] In some other optional schemes of this application, such as Figure 1 and Figure 3 As shown, the integrated power semiconductor device further includes: a first molybdenum sheet 15, located between the first electrode 13 and the first power semiconductor chip 10; a second molybdenum sheet 16, located between the first power semiconductor chip 10 and the conductive layer 11; a third molybdenum sheet 17, located between the second power semiconductor chip 12 and the conductive layer 11; and a fourth molybdenum sheet 18, located between the second power semiconductor chip 12 and the second electrode 14. In this embodiment, the molybdenum sheet has good thermal conductivity and thermal expansion coefficient matching characteristics. Especially at high temperatures, placing the molybdenum sheet between the first electrode and the first power semiconductor chip, the first power semiconductor chip and the conductive layer, the second power semiconductor chip and the conductive layer, and the second power semiconductor chip and the second electrode can significantly improve the heat conduction efficiency, thereby reducing the thermal resistance of the device, ensuring effective heat dissipation in high-power and high-frequency applications, and helping to improve the thermal stability and reliability of the device.

[0050] Specifically, Figure 1As shown, the first molybdenum sheet 15 serves as the anode molybdenum sheet of the first power semiconductor chip 10 , the second molybdenum sheet 16 serves as the cathode molybdenum sheet of the first power semiconductor chip 10 , the third molybdenum sheet 17 serves as the anode molybdenum sheet of the second power semiconductor chip 12 , and the fourth molybdenum sheet 18 serves as the cathode molybdenum sheet of the second power semiconductor chip 12 .

[0051] In some other optional schemes of this application, such as Figure 1 and Figure 3 As shown, the integrated power semiconductor device further includes: a first control component 19, which contacts the first power semiconductor chip 10. The first control component 19 includes a first gate component 191, a first gate spoke 192 and a first gate molybdenum sheet 193. The first gate spoke 192 contacts the first gate molybdenum sheet 193 under the elastic pressure of the first gate component 191. In this embodiment, the first gate component and the first gate spoke are designed to provide a reliable gate signal transmission path. The first gate component can effectively transmit the gate drive signal from the external drive circuit to the gate region of the first power semiconductor chip. The high conductivity and good thermal stability of the first gate molybdenum sheet can reduce the resistance loss in the gate drive process, improve the drive efficiency, and thus reduce the switching loss and improve the switching speed and frequency of the device.

[0052] Specifically, the first gate spoke serves as the gate of the first power semiconductor chip.

[0053] Specifically, the package cross-sectional structure of the integrated power semiconductor device (i.e., the reverse resistance turn-off thyristor) is as follows: Figure 1 As shown, the stacked structure is, from top to bottom, the first electrode 13, the first molybdenum sheet 15, the first power semiconductor chip 10, the second molybdenum sheet 16, the conductive layer 11, the third molybdenum sheet 17, the second power semiconductor chip 12, the fourth molybdenum sheet 18, and the second electrode 14. The first gate spoke 192 is in contact with the first gate molybdenum sheet 193 under the elastic pressure of the first gate component 191. The first molybdenum sheet 15, the second molybdenum sheet 16 and the first gate molybdenum sheet 193 are in contact with the anode region, the cathode region and the gate region of the first power semiconductor chip 10 respectively under the action of external pressure. The first flange 20 connects the first ceramic tube shell 21 and the first electrode 13. The second flange 22 connects the first ceramic ring 23, the conductive layer 11 and the second ceramic tube shell 24. The first gate connecting ring 25 leads out the first gate spoke 192 and connects the first ceramic tube shell 21 and the first ceramic ring 23. The third flange 26 connects the second ceramic tube shell 24 and the second electrode 14.

[0054] Specifically, Figure 1As shown, the first flange 20 serves as the anode flange of the first power semiconductor chip 10 , the second flange 22 serves as the cathode flange of the first power semiconductor chip 10 , the second flange 22 serves as the anode flange of the second power semiconductor chip 12 , and the third flange 26 serves as the cathode flange of the second power semiconductor chip 12 .

[0055] Specifically, Figure 2 For Figure 1 Schematic diagram of the equivalent circuit of the corresponding integrated power semiconductor device.

[0056] According to other exemplary embodiments of the present application, Figure 3 As shown, the integrated power semiconductor device further includes: a second control component 27, which contacts the second power semiconductor chip 12, and the second control component 27 includes a second gate component 271, a second gate spoke 272, and a second gate molybdenum sheet 273. The second gate spoke 272 contacts the second gate molybdenum sheet 273 under the elastic pressure of the second gate component 271. In this embodiment, the design of the second gate component and the second gate spoke ensures the accurate transmission of the gate signal.

[0057] Specifically, the second gate spoke serves as the gate of the second power semiconductor chip.

[0058] Specifically, the package cross-sectional structure of the integrated power semiconductor device (i.e., semi-integrated bidirectional turn-off thyristor or bidirectional turn-off thyristor) is as follows: Figure 3As shown, the stacked structure is, from top to bottom, the first electrode 13, the first molybdenum sheet 15, the first power semiconductor chip 10, the second molybdenum sheet 16, the conductive layer 11, the third molybdenum sheet 17, the second power semiconductor chip 12, the fourth molybdenum sheet 18, and the second electrode 14. The first gate spoke 192 contacts the first gate molybdenum sheet 193 under the elastic pressure of the first gate component 191, and the second gate spoke 272 contacts the second gate molybdenum sheet 273 under the elastic pressure of the second gate component 271. The first molybdenum sheet 15, the second molybdenum sheet 16 and the first gate molybdenum sheet 193 are respectively in contact with the anode region, the cathode region and the gate region of the first power semiconductor chip 10 under the action of external pressure. The third molybdenum sheet 17, the fourth molybdenum sheet 18, and the second electrode 14 are respectively in contact with the anode region, the cathode region and the gate region of the first power semiconductor chip 10 under the action of external pressure. The four molybdenum sheets 18 and the second gate molybdenum sheet 273 are respectively in contact with the anode region, cathode region and gate region of the second power semiconductor chip 12 under the action of external pressure. The first flange 20 connects the first ceramic tube shell 21 and the first electrode 13. The first gate connecting ring 25 leads out the first gate spoke 192 and connects the first ceramic tube shell 21 and the first ceramic ring 23. The second flange 22 connects the first ceramic ring 23, the second ceramic ring 28, and the conductive layer 11. The second flange 22 connects the first ceramic tube shell 21 and the first electrode 13. The second gate connecting ring 29 leads out the second gate spoke 272 and connects the second ceramic tube shell 24 and the second ceramic ring 28. The third flange 26 connects the second ceramic tube shell 24 and the second electrode 14.

[0059] Specifically, Figure 3 As shown, the first flange 20 serves as the anode flange of the first power semiconductor chip 10 , the second flange 22 serves as the cathode flange of the first power semiconductor chip 10 , the second flange 22 serves as the cathode flange of the second power semiconductor chip 12 , and the third flange 26 serves as the anode flange of the second power semiconductor chip 12 .

[0060] Specifically, Figure 4 For Figure 3 A schematic diagram of an equivalent circuit of a corresponding integrated power semiconductor device (i.e., a semi-integrated bidirectional turn-off thyristor); Figure 5 For Figure 3 Corresponding equivalent circuit diagram of another integrated power semiconductor device (i.e., bidirectional turn-off thyristor).

[0061] According to some other exemplary embodiments of the present application, the thickness of the conductive layer is greater than the thickness of the first electrode and the thickness of the second electrode. In this embodiment, the thickness of the conductive layer is relatively large, which can significantly optimize heat dissipation performance, improve current distribution, and increase voltage tolerance.

[0062] An embodiment of the present application also provides an electronic device, comprising any one of the above-mentioned integrated power semiconductor devices.

[0063] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0064] In the integrated power semiconductor device of the present application, the integrated power semiconductor device includes a stacked second power semiconductor chip, a conductive layer and a first power semiconductor chip, the first power semiconductor chip and the second power semiconductor chip are connected in series through the conductive layer, and the first power semiconductor chip includes a first thyristor. Compared with the problem that the cathode electrode in the existing power semiconductor device packaging mainly plays a conductive role and its space utilization rate is not high, resulting in poor performance of the power semiconductor device, the present application increases the space utilization rate of the cathode electrode of the first power semiconductor chip by adding a second power semiconductor chip (the first power semiconductor chip and the second power semiconductor chip share the conductive layer) in the position of the cathode electrode of the first power semiconductor chip, that is, the first power semiconductor chip and the second power semiconductor chip are packaged in the same device, so as to more effectively utilize the packaging space, improve the power density and integration of the device, and connect the first power semiconductor chip and the second power semiconductor chip in series through the conductive layer, so as to ensure good performance of the integrated power semiconductor device.

[0065] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. An integrated power semiconductor device, characterized in that: include: a first power semiconductor chip, the first power semiconductor chip comprising a first thyristor; A conductive layer, located on one side of the first power semiconductor chip, the conductive layer serving as a cathode of the first power semiconductor chip; The second power semiconductor chip is located at a side of the conductive layer away from the first power semiconductor chip, and the first power semiconductor chip and the second power semiconductor chip are connected in series through the conductive layer.

2. The integrated power semiconductor device according to claim 1, characterized in that: The integrated power semiconductor device further comprises: A first electrode, located at a side of the first power semiconductor chip away from the conductive layer, the first electrode serving as an anode of the first power semiconductor chip; The second electrode is located on a side of the second power semiconductor chip away from the conductive layer.

3. The integrated power semiconductor device according to claim 2, characterized in that: The first thyristor is an asymmetric turn-off thyristor, the second power semiconductor chip includes a diode, the conductive layer serves as an anode of the second power semiconductor chip, and the second electrode serves as a cathode of the second power semiconductor chip.

4. The integrated power semiconductor device according to claim 2, characterized in that: The first thyristor is an asymmetric turn-off thyristor, the second power semiconductor chip includes a second thyristor, the second thyristor is an asymmetric turn-off thyristor, the conductive layer serves as the cathode of the second power semiconductor chip, and the second electrode serves as the anode of the second power semiconductor chip.

5. The integrated power semiconductor device according to claim 2, characterized in that: The first thyristor is a reverse conducting turn-off thyristor, the second power semiconductor chip includes a second thyristor, the second thyristor is a reverse conducting turn-off thyristor, and the first power semiconductor chip and the second power semiconductor chip are connected in reverse series.

6. The integrated power semiconductor device according to claim 2, characterized in that: The integrated power semiconductor device further comprises: A first molybdenum sheet, located between the first electrode and the first power semiconductor chip; A second molybdenum sheet, located between the first power semiconductor chip and the conductive layer; a third molybdenum sheet, located between the second power semiconductor chip and the conductive layer; The fourth molybdenum sheet is located between the second power semiconductor chip and the second electrode.

7. The integrated power semiconductor device according to claim 1, characterized in that: The integrated power semiconductor device further comprises: The first control component is in contact with the first power semiconductor chip. The first control component includes a first gate component, a first gate spoke and a first gate molybdenum sheet. The first gate spoke is in contact with the first gate molybdenum sheet under the elastic pressure of the first gate component.

8. The integrated power semiconductor device according to claim 4 or 5, characterized in that: The integrated power semiconductor device further comprises: The second control component is in contact with the second power semiconductor chip. The second control component includes a second gate component, a second gate spoke and a second gate molybdenum sheet. The second gate spoke is in contact with the second gate molybdenum sheet under the elastic pressure of the second gate component.

9. The integrated power semiconductor device according to claim 2, characterized in that: The thickness of the conductive layer is greater than the thickness of the first electrode and the thickness of the second electrode.

10. An electronic device, characterized in that: An integrated power semiconductor device comprising any one of claims 1 to 9.

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