Display device

Abstract

The display device includes: a substrate; the first group of assembly lines and the second group of assembly lines are arranged on the substrate; the insulating layer is arranged on the first assembly line and the second assembly line and is provided with a groove; the partition walls are arranged on the first assembly line and the second assembly line and provided with assembly holes connected with the grooves; a semiconductor light emitting device disposed in the assembly hole; the fixing component is arranged in the groove; and a connection electrode disposed between an outer side surface of the semiconductor light emitting device and an inner side surface of the assembly hole, the fixing member and the connection electrode include an aggregate of an adhesion block in which a plurality of conductive nanoparticles are adhered to each other.

Description

Technical Field

[0001] Embodiments relate to a display device. Background Art

[0002] Large-screen displays include liquid crystal displays (LCD), OLED displays, and micro-LED displays (Micro-LEDdisplay).

[0003] The micro LED display is a display using a micro LED, which is a semiconductor light emitting device having a diameter or a cross-sectional area of ​​100 μm or less, as a display device.

[0004] Micro LED displays use micro LEDs, which are semiconductor light-emitting devices, as display devices, so they have excellent performance in many characteristics such as light-to-dark ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency or brightness.

[0005] In particular, the micro-LED display can separate and combine screens in a modular manner, thereby having the advantages of free adjustment of size or resolution and the ability to achieve a flexible display.

[0006] However, a large-scale micro-LED display requires more than several million micro-LEDs, so there is a technical problem that it is difficult to quickly and accurately transfer the micro-LEDs to the display panel.

[0007] Recently developed transfer technologies include pick and place process, laser lift-off method or self-assembly method.

[0008] Among them, the self-assembly method, as a method for semiconductor light-emitting devices to find assembly positions in a fluid by themselves, is a method that is conducive to realizing large-screen display devices.

[0009] However, research on the technology of manufacturing displays through self-assembly of micro-LEDs is still incomplete.

[0010] In particular, in the prior art, when millions of semiconductor light-emitting devices are quickly transferred to a large display, although the transfer speed can be increased, the transfer error rate may increase, thereby causing a technical problem of reduced transfer yield.

[0011] In the related art, although a transfer process using a self-assembly method of dielectrophoresis (DEP) has been attempted, there is a problem of low self-assembly rate due to the non-uniformity of the dielectrophoresis force.

[0012] On the other hand, Figure 1 and Figure 2 As shown, an assembly hole 7 is formed on the substrate 1 for self-assembly, and a semiconductor light emitting device 8 is assembled in the assembly hole 7. Afterwards, in order to form a side electrode, a metal film 9 is deposited on the substrate 1 using a deposition process.

[0013] However, since the gap between the outer side of the semiconductor light emitting device 8 and the inner side of the assembly hole 7 is very narrow, it is difficult for the metal substance to pass through the gap to the first assembly line 2 and the second assembly line 3. Even if the metal substance is transferred to the first assembly line 2 and the second assembly line 3, the thickness of the deposited film is limited, so there is a problem of electrical disconnection or degradation of the film quality. This problem may continue to the subsequent process, causing the problem of poor lighting when realizing the display device.

[0014] Unexplained reference numeral 6 is a partition wall for forming an assembly hole 7. Unexplained reference numeral 4 is an insulating layer that protects the first and second assembly wires 2 and 3.

[0015] Based on non-public internal technology, such as Figure 2 As shown, instead of forming the metal film 9 after assembling the semiconductor light emitting device 8 to the assembly hole 7, the partition wall 6 can be removed. By removing the partition wall 6, there is no physical obstacle in the lateral direction of the semiconductor light emitting device 8. Therefore, without any physical hindrance in the lateral direction of the semiconductor light emitting device 8, the metal film 9 is deposited not only on the semiconductor light emitting device 8 but also on the substrate 1, and the side of the semiconductor light emitting device 8 and the first group of assembly lines 2 can be electrically connected by patterning the metal film 9.

[0016] However, in the case where the partition wall 6 is removed by an etching process, as shown in FIG. Figure 3 As shown in (a), an oxidized organic residual film 11 is formed on the substrate 1 in the area corresponding to the partition wall 6. That is, as an etching process, dry etching using O2 plasma is used to remove the partition wall 6. In this case, oxygen (O2) and the partition wall 6 are not removed, but the partition wall 6 is oxidized, thereby forming the oxidized organic residual film 11 on the surface of the substrate 1.

[0017] like Figure 3As shown in (b), when a metal film is deposited and patterned to form a side electrode 12 in a state where the oxidized organic residual film 11 is formed, there is a problem that the side electrode 12 is broken due to the oxidized organic residual film 11 or the roughness of the side electrode 12 is increased, resulting in increased resistance.

[0018] Furthermore, since the thickness of the partition wall 6 is thick, a large amount of time is required to completely remove the partition wall 6 by an etching process, so there is a problem that the process time increases.

[0019] On the other hand, Figure 1 and Figure 2 As shown, during the process of forming the metal film 9 after assembling the semiconductor light-emitting device 8 or forming the metal film 9 after removing the partition wall 6, it is necessary to add a process of fixing the semiconductor light-emitting device 8 to the insulating layer 4 so that the semiconductor light-emitting device 8 does not fall out of the assembly hole 7. Therefore, there is a problem that the process time is long and becomes complicated. Summary of the invention

[0020] Problem to be solved

[0021] Embodiments are directed to solving the above-referenced problems and other problems.

[0022] Another object of the embodiment is to provide a display device capable of simultaneously achieving fixation and electrical connection of a semiconductor light emitting device.

[0023] Another object of the embodiment is to provide a display device in which a connection electrode (side electrode) can be easily formed without disconnection.

[0024] In addition, an object of the embodiment is to provide a display device capable of enhancing the fixation of a semiconductor light emitting device.

[0025] In addition, an object of the embodiment is to provide a display device capable of improving heat dissipation characteristics.

[0026] In addition, an object of the embodiment is to provide a display device capable of improving brightness.

[0027] In addition, an object of the embodiment is to provide a display device capable of achieving high resolution or ultra-high resolution.

[0028] In addition, an object of the embodiment is to provide a display device capable of significantly shortening the process time without removing the partition wall.

[0029] The objects of the embodiments are not limited to the above contents, and include objects that can be grasped through the detailed description of the present invention.

[0030] Technical solutions to the problem

[0031] In order to achieve the above or other purposes, according to one aspect of the embodiment, a display device includes: a substrate; a first group of assembly lines and a second group of assembly lines, which are arranged on the substrate; an insulating layer, which is arranged on the first group of assembly lines and the second group of assembly lines and has a groove; a partition wall, which is arranged on the first group of assembly lines and the second group of assembly lines and has an assembly hole connected to the groove; a semiconductor light-emitting device, which is arranged in the assembly hole; a fixing member, which is arranged in the groove; and a connecting electrode, which is arranged between the outer side surface of the semiconductor light-emitting device and the inner side surface of the assembly hole; the fixing member and the connecting electrode include a collection of adhesion blocks in which a plurality of conductive nanoparticles are adhered to each other.

[0032] The plurality of conductive nanoparticles may include at least one of electrode particles, magnetization particles, and reflection particles.

[0033] The density of the magnetizing particles may increase from the top surface of the connection electrode toward the bottom.

[0034] Adjacent electrode particles may be adhered via the magnetizing particles.

[0035] A portion of the connection electrode may extend between the semiconductor light emitting device and the insulating layer.

[0036] The top surface of the connection electrode may have a non-uniform surface.

[0037] The top surface of the connecting electrode may have a curved surface.

[0038] The display device may include: a second insulating layer, arranged on the partition wall, the semiconductor light-emitting device and the connecting electrode; and an electrode wiring, arranged on the second insulating layer; the connecting electrode can connect the side of the semiconductor light-emitting device to at least one of the first group of assembly lines and the second group of assembly lines, and the electrode wiring can be connected to the upper part of the semiconductor light-emitting device.

[0039] The display device may include a third insulating layer between the connection electrode and the second insulating layer in the assembling hole.

[0040] The connection electrode may include a plurality of blocks, and a material of the blocks may be the same as a material of the third insulating layer.

[0041] The connection electrode may include a plurality of strips, and a material of the strips may be the same as a material of the third insulating layer.

[0042] A portion of the plurality of strips may be connected to the third insulating layer.

[0043] The connection electrode may include a plurality of pores, and the pores may contain air.

[0044] The fixing member may be disposed between the first group of assembly lines and the second group of assembly lines and between a bottom surface of the semiconductor light emitting device and a top surface of the insulating layer.

[0045] The fixing member may be connected to the connection electrode.

[0046] The connection electrode and the fixing member may include a reflective layer.

[0047] The connection electrode may be disposed in the assembly hole along a periphery of the semiconductor light emitting device.

[0048] A gap between an outer side surface of the semiconductor light emitting device and an inner side surface of the assembly hole may be less than 1.5 micrometers.

[0049] Effects of the Invention

[0050] The embodiment can simultaneously achieve fixation and electrical connection of a semiconductor light emitting device using solution coating and melting processes.

[0051] In particular, by forming the connection electrode (side electrode) by using solution coating and melting process, even if the gap between the outer side of the semiconductor light-emitting device and the inner side of the assembly hole is narrow, the connection electrode will not be disconnected, thereby preventing poor lighting. As a result, the gap can be further reduced, and high resolution or ultra-high resolution can be achieved.

[0052] In addition, since the connection electrode without disconnection can be formed without removing the partition wall, it is possible to prevent the increase in process time due to the removal of the partition wall.

[0053] like Fig.24 As shown, since the fixing member 380 is formed simultaneously with the connection electrode 370 - 1 , there is no need to additionally form the fixing member, thereby being able to simplify the process and shorten the process time.

[0054] like Fig.32 As shown, by solution coating and melting process, not only the connection electrode 370-1 and the fixing member 380 can be formed, but also the third insulating layer 390 can be formed. Thus, the semiconductor light emitting device 150-1 is fixed to the substrate 310 not only by the fixing member 380 but also by the third insulating layer 390, so that the fixation of the semiconductor light emitting device 150-1 can be enhanced.

[0055] By performing a melting process, a portion of the third insulating layer 390 may be formed as a plurality of blocks ( Fig.35 380a) or multiple articles ( Fig.36 Since the plurality of blocks 380a or the plurality of strips 380b allow the heat generated by the semiconductor light emitting device 170-1 to be discharged through the connection electrode 370-1, the heat dissipation characteristics can be improved. The blocks may be referred to as dots or patterns.

[0056] like Fig.37 As shown, the connection electrode 370-1 and the fixing member 380 are disposed on the side and lower side of the semiconductor light emitting device 150-1, and thus can be used as a reflective layer by distributing the reflective particles 403 in each of the connection electrode 370-1 and the fixing member 380. Therefore, it is possible to improve light efficiency and brightness by reflecting light generated by the semiconductor light emitting device 150-1 forward.

[0057] The applicable additional scope of the embodiment can become more clear through the following detailed description. However, those skilled in the art can clearly understand the various changes and modifications within the thought and scope of the embodiment, so it should be understood that the detailed description and specific embodiments such as the preferred embodiment are only exemplary. BRIEF DESCRIPTION OF THE DRAWINGS

[0058] Figure 1 It is a top view showing a state where the semiconductor light emitting device is assembled in the assembly hole by an assembly method.

[0059] Figure 2 This is a cross-sectional view showing a state where a wire break occurs during metal deposition.

[0060] Figure 3 (a) is a plan view showing a state where an oxidized organic residual film is generated when the partition wall is removed.

[0061] Figure 3 (b) means Figure 3 (a) is a cross-sectional view showing a defect in a side electrode caused by an oxidized organic residual film.

[0062] Figure 4 The living room of a house in which the display device according to the embodiment is installed is shown.

[0063] Figure 5 is a block diagram schematically showing a display device according to an embodiment.

[0064] Figure 6 It is shown Figure 5 A circuit diagram of an example of a pixel.

[0065] Figure 7 yes Figure 4 An enlarged view of a first panel area in a display device.

[0066] Figure 8 yes Figure 7Magnified view of the A2 area.

[0067] Fig. 9 FIG. 1 is a diagram showing an example in which the light emitting device according to the embodiment is assembled onto a substrate by a self-assembly method.

[0068] Fig.10 It is a top view showing the display device of the embodiment.

[0069] Fig.11 is a cross-sectional view showing the first sub-pixel of the first embodiment.

[0070] Fig.12 It is a diagram showing blocks constituting a connection electrode and a fixing member.

[0071] Fig.13 Is to show plural Fig.12 A collection of blocks combined.

[0072] Fig.14 It is a graph showing the density of magnetizing particles in the connection electrode.

[0073] Fig.15 This is a diagram showing a state in which adjacent electrode particles adhere to each other via magnetizing particles.

[0074] Fig.16 FIG. 1 is an example diagram of the top surface of the connection electrode.

[0075] Fig.17 FIG. 4 is another example diagram of the top surface of the connection electrode.

[0076] Fig.18 It is a diagram showing the manufacture of a display device using a backplane substrate.

[0077] Figures 19 to 26 1 is a diagram showing a manufacturing process of the first sub-pixel according to the first embodiment.

[0078] Fig. 27 is a cross-sectional view showing a first sub-pixel according to the second embodiment.

[0079] Figures 28 to 34 1 is a diagram showing a manufacturing process of the first sub-pixel according to the second embodiment.

[0080] Fig.35 is a cross-sectional view showing a first sub-pixel according to the third embodiment.

[0081] Fig.36 is a cross-sectional view showing a first sub-pixel according to the fourth embodiment.

[0082] Fig.37 is a cross-sectional view showing a first sub-pixel according to the fifth embodiment.

[0083] The sizes, shapes, values, etc. of the plurality of components shown in the drawings may be different from the actual ones. In addition, even if the same component is shown in different sizes, shapes, values, etc. in each drawing, this is only an example in the drawing, and the same component may have the same size, shape, value, etc. in each drawing. DETAILED DESCRIPTION

[0084] Hereinafter, the embodiments disclosed in this specification are described in detail with reference to the accompanying drawings, and the same or similar constituent elements are given the same figure numbers regardless of the figure numbers, and repeated descriptions thereof are omitted. The suffixes "module" and "unit" of the constituent elements used in the following description are given or mixed for the sake of easy writing of the specification, and they themselves do not have meanings or functions that distinguish each other. In addition, the accompanying drawings are used to make the embodiments disclosed in this specification easy to understand, and the technical ideas disclosed in this specification are not limited by the accompanying drawings. In addition, when it is mentioned that an element such as a layer, a region or a substrate exists "on" another constituent element, it should be understood that it can exist directly on another element, or there can be other intermediate elements between them.

[0085] The display device described in this specification may include a TV, a sign, a mobile terminal such as a mobile phone or a smart phone, a computer display such as a laptop or a desktop computer, a head-up display for a car, a backlight unit for a display, a display for VR, AR or MR (mixed reality), a light source, etc. However, even if it is a new product developed later, the configuration of the embodiments described in this specification can also be applied to a display device in the same manner.

[0086] Hereinafter, a display device according to an embodiment will be described.

[0087] Figure 4 The living room of a house in which the display device according to the embodiment is installed is shown.

[0088] Reference Figure 4 The display device 100 of the embodiment can display the status of various electronic products such as a washing machine 101, a sweeping robot 102, and an air purifier 103, can communicate with each electronic product based on IOT, and can also control each electronic product based on user setting data.

[0089] The display device 100 of the embodiment may include a flexible display manufactured on a thin and flexible substrate. The flexible display can not only maintain the characteristics of an existing flat panel display, but also be able to be bent or rolled like paper.

[0090] In a flexible display, visual information can be realized by individually controlling the light emission of unit pixels (unitpixel) configured in a matrix form. Unit pixel refers to the smallest unit for realizing a color. The unit pixel of the flexible display can be realized by a light-emitting device. In an embodiment, the light-emitting device can be a Micro-LED (micrometer-level light-emitting diode) or a Nano-LED (nano-level light-emitting diode), but is not limited thereto.

[0091] Figure 5 is a block diagram schematically showing a display device of an embodiment, Figure 6 It is shown Figure 5 A circuit diagram of an example of a pixel.

[0092] Reference Figure 5 and Figure 6 The display device of the embodiment may include a display panel 10 , a driving circuit 20 , a scan driving unit 30 , and a power supply circuit 50 .

[0093] The display device 100 of the embodiment may drive the light emitting devices in an active matrix (AM) mode or a passive matrix (PM) mode.

[0094] The driving circuit 20 may include a data driving section 21 and a timing control section 22 .

[0095] The display panel 10 may be formed in a rectangular shape, but is not limited thereto. That is, the display panel 10 may be formed in a circular shape or an elliptical shape. At least one side of the display panel 10 may be formed to be curved with a prescribed curvature.

[0096] The display panel may include a display area DA. The display area DA is a region where pixels PX are formed to display an image. The display panel may include a non-display area NDA. The non-display area DNA may be a region other than the display area DA.

[0097] As an example, the display area DA and the non-display area NDA may be defined on the same plane. For example, the non-display area DNA may be on the same plane as the display area DA and surround the display area DA, but is not limited thereto.

[0098] As another example, although not shown in the figure, the display area DA and the non-display area NDA may be defined on different surfaces. For example, the display area DA may be defined on the top surface of the substrate, and the non-display area NDA may be defined on the bottom surface of the substrate. For example, the non-display area NDA may also be defined on the entire area or a portion of the bottom surface of the substrate.

[0099] On the other hand, although the drawings show a case where the substrate is divided into a display area DA and a non-display area NDA, it is not necessary to divide the substrate into the display area DA and the non-display area NDA. That is, only the display area DA may be provided on the top surface of the substrate, and the non-display area NDA may not exist. In other words, the entire area of ​​the top surface of the substrate is the display area DA for displaying an image, and the frame area serving as the non-display area NDA may not exist.

[0100] The display panel 10 may include a plurality of data lines D1~Dm (m is an integer greater than 2), a plurality of scan lines S1~Sn (n is an integer greater than 2) intersecting the plurality of data lines D1~Dm, a high potential voltage line VDDL provided with a high potential voltage, a low potential voltage line VSSL provided with a low potential voltage VSS, and a plurality of pixels PX connected to the plurality of data lines D1~Dm and the plurality of scan lines S1~Sn.

[0101] Each of the plurality of pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit a first color light of a first main wavelength, the second sub-pixel PX2 may emit a second color light of a second main wavelength, and the third sub-pixel PX3 may emit a third color light of a third main wavelength. The first color light may be red light, the second color light may be green light, and the third color light may be blue light, but are not limited thereto. In addition, Figure 5 The case where each of the plurality of pixels PX includes three sub-pixels is exemplified, but is not limited thereto. That is, each of the plurality of pixels PX may include more than four sub-pixels.

[0102] Each of the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may be connected to at least one of the plurality of data lines D1-Dm, at least one of the plurality of scan lines S1-Sn, and a high potential voltage line VDDL. Figure 6 As shown, the first subpixel PX1 may include a plurality of light emitting devices LD, a plurality of transistors for supplying current to the plurality of light emitting devices LD, and at least one capacitor Cst.

[0103] Although not shown, each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may also include only one light emitting device LD and at least one capacitor Cst.

[0104] Each of the plurality of light emitting devices LD may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers and a second electrode. Here, the first electrode may be an anode electrode, and the second electrode may be a cathode electrode, but is not limited thereto.

[0105] The light emitting device LD may be one of a horizontal type light emitting device, a flip chip type light emitting device, and a vertical type light emitting device.

[0106] like Figure 6 As shown, the plurality of transistors may include: a driving transistor DT, supplying current to the plurality of light emitting devices LD; and a scanning transistor ST, supplying a data voltage to the gate electrode of the driving transistor DT. The driving transistor DT may include: a gate electrode connected to the source electrode of the scanning transistor ST; a source electrode connected to a high potential voltage line VDDL to which a high potential voltage (VDD) is applied; and a drain electrode connected to the plurality of first electrodes of the plurality of light emitting devices LD. The scanning transistor ST may include: a gate electrode connected to a scanning line Sk (k is an integer satisfying 1≤k≤n); a source electrode connected to the gate electrode of the driving transistor DT; and a drain electrode connected to a data line Dj (j is an integer satisfying 1≤j≤m).

[0107] The capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT. The storage capacitor Cst charges a difference between the gate voltage and the source voltage of the driving transistor DT.

[0108] The driving transistor DT and the scanning transistor ST may be formed by thin film transistors. Figure 7 In the embodiment, the driving transistor DT and the scanning transistor ST are described with the focus on being formed by a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but the present invention is not limited thereto. The driving transistor DT and the scanning transistor ST may also be formed by an N-type MOSFET. In this case, the positions of the source electrode and the drain electrode of the driving transistor DT and the scanning transistor ST may be changed.

[0109] In addition, Figure 6 In the embodiment, each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 is illustrated as including a 2T1C (2Transistor-1capacitor, two transistors and one capacitor) having a driving transistor DT, a scanning transistor ST, and a capacitor Cst, but the present invention is not limited thereto. Each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may include a plurality of scanning transistors ST and a plurality of capacitors Cst.

[0110] The second subpixel PX2 and the third subpixel PX3 may be represented by substantially the same circuit diagram as the first subpixel PX1 , and thus a detailed description thereof is omitted.

[0111] The driving circuit 20 outputs a plurality of signals and a plurality of voltages for driving the display panel 10. To this end, the driving circuit 20 may include a data driving part 21 and a timing control part 22.

[0112] The data driving section 21 receives the digital video data DATA and the source control signal DCS from the timing control section 22. The data driving section 21 converts the digital video data DATA into a plurality of analog data voltages according to the source control signal DCS and supplies the analog data voltages to the plurality of data lines D1 to Dm of the display panel 10.

[0113] The timing control unit 22 receives digital video data DATA and a plurality of timing signals from a host system, which may be an application processor of a smartphone or a tablet PC, a display, a system-on-chip of a TV, or the like.

[0114] The timing control unit 22 generates control signals for controlling the operation timing of the data driving unit 21 and the scan driving unit 30. The plurality of control signals may include a source control signal DCS for controlling the operation timing of the data driving unit 21 and a scan control signal SCS for controlling the operation timing of the scan driving unit 30.

[0115] The driving circuit 20 may be disposed in a non-display area NDA provided on one side of the display panel 10. The driving circuit 20 is formed by an integrated circuit (IC) and may be mounted on the display panel 10 in a COG (chip on glass) manner, a COP (chip on plastic) manner, or an ultrasonic bonding manner, but the present invention is not limited thereto. For example, the driving circuit 20 may be mounted on a circuit board (not shown) instead of the display panel 10.

[0116] The data driving unit 21 can be mounted on the display panel 10 by means of COG, COP or ultrasonic bonding, and the timing control unit 22 can be mounted on a circuit board.

[0117] The scan driving unit 30 receives a scan control signal SCS from the timing control unit 22. The scan driving unit 30 generates a plurality of scan signals according to the scan control signal SCS and supplies the scan signals to the plurality of scan lines S1 to Sn of the display panel 10. The scan driving unit 30 includes a plurality of transistors and may be formed in the non-display area NDA of the display panel 10. Alternatively, the scan driving unit 30 may be formed by an integrated circuit, in which case, it may be mounted on a gate flexible film attached to the other side of the display panel 10.

[0118] The power supply circuit 50 can generate a plurality of voltages required for driving the display panel 10 from the main power applied from the system board and supply them to the display panel 10. For example, the power supply circuit 50 can generate a high potential voltage VDD and a low potential voltage VSS for driving a plurality of light emitting devices LD of the display panel 10 from the main power, and supply them to a high potential voltage line VDDL and a low potential voltage line VSSL of the display panel 10. In addition, the power supply circuit 50 can generate and supply a driving voltage for driving the driving circuit 20 and the scanning driving section 30 from the main power.

[0119] Figure 7 yes Figure 3 An enlarged view of the first panel area in the display device.

[0120] Reference Figure 7 The display device 100 of the embodiment can be manufactured by mechanically and electrically connecting a plurality of panel areas such as the first panel area A1 through tiling.

[0121] The first panel area A1 may include a unit pixel ( Figure 5 A plurality of semiconductor light emitting devices 150 configured with PX).

[0122] Figure 8 yes Figure 7 Magnified view of the A2 area.

[0123] Reference Figure 8 The display device 100 of the embodiment may include a substrate 200, assembly lines 201 and 202, an insulating layer 206, and a plurality of semiconductor light emitting devices 150. More components may be included.

[0124] The group assembly line may include a first group assembly line 201 and a second group assembly line 202 that are separated from each other. The first group assembly line 201 and the second group assembly line 202 may generate a dielectrophoretic force (DEP force) for assembling the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 may be one of a horizontal type semiconductor light emitting device, a flip chip type semiconductor light emitting device, and a vertical type semiconductor light emitting device.

[0125] In order to realize each unit pixel (sub-pixel), the semiconductor light emitting device 150 may include a red semiconductor light emitting device 150, a green semiconductor light emitting device 150G and a blue semiconductor light emitting device 150B, but is not limited thereto and may also have a red phosphor and a green phosphor to realize red and green respectively.

[0126] The substrate 200 may be a supporting member that supports a plurality of components disposed on the substrate 200 , or a protecting member that protects a plurality of components.

[0127] The substrate 200 may be a rigid substrate or a flexible substrate. The substrate 200 may be formed of sapphire, glass, silicon or polyimide. In addition, the substrate 200 may include a flexible material such as PEN (Polyethylene Naphthalate) and PET (Polyethylene Terephthalate). In addition, the substrate 200 may be a transparent material, but is not limited thereto. The substrate 200 may function as a supporting substrate in the display panel, and may also function as an assembly substrate when the light-emitting device is self-assembled.

[0128] The substrate 200 may be provided with Figure 5 and Figure 6 The circuits in the sub-pixels PX1 , PX2 , and PX3 are shown as backplanes such as transistors ST, DT, capacitors Cst, and signal wirings, but are not limited thereto.

[0129] The insulating layer 206 may include an organic material having insulation and flexibility such as polyimide, PAC, PEN, PET, polymer, or an inorganic material such as silicon oxide (SiO2) or silicon nitride (SiNx), and may also be formed integrally with the substrate 200 to form a single substrate.

[0130] The insulating layer 206 may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer is flexible, thereby realizing the flexible function of the display device. For example, the insulating layer 206 may be a conductive adhesive layer such as an anisotropic conductive film (ACF) or an anisotropic conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer having conductivity in a direction perpendicular to the thickness and electrical insulation in a direction horizontal to the thickness.

[0131] The insulating layer 206 may include an assembly hole 203 for inserting the semiconductor light emitting device 150. Therefore, during self-assembly, the semiconductor light emitting device 150 may be easily inserted into the assembly hole 203 of the insulating layer 206. The assembly hole 203 may be referred to as an insertion hole, a fixing hole, an alignment hole, etc. The assembly hole 203 may also be referred to as a hole.

[0132] The assembly hole 203 may be referred to as a hole, a slot, a groove, a recess, a pocket, or the like.

[0133] The assembly hole 203 may be different according to the shape of the semiconductor light emitting device 150. For example, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may each have a different shape, and the assembly hole 203 may have a shape corresponding to the shape of each of these semiconductor light emitting devices. For example, the assembly hole 203 may include a first assembly hole for assembling a red semiconductor light emitting device, a second assembly hole for assembling a green semiconductor light emitting device, and a third assembly hole for assembling a blue semiconductor light emitting device. For example, the red semiconductor light emitting device may have a circular shape, the green semiconductor light emitting device may have a first elliptical shape including a first short axis and a second long axis, and the blue semiconductor light emitting device may have a second elliptical shape including a second short axis and a second long axis, but is not limited thereto. The second long axis of the ellipse of the blue semiconductor light emitting device may be greater than the second long axis of the ellipse of the green semiconductor light emitting device, and the second short axis of the ellipse of the blue semiconductor light emitting device may be smaller than the first short axis of the ellipse of the green semiconductor light emitting device.

[0134] On the other hand, the semiconductor light emitting device 150 can be mounted on the substrate 200 by, for example, a self-assembly method ( Fig. 9 ) and transfer methods, etc.

[0135] Fig. 9 FIG. 1 is a diagram showing an example in which the light emitting device according to the embodiment is assembled onto a substrate by a self-assembly method.

[0136] based on Fig. 9 An example in which the semiconductor light emitting device of the embodiment is assembled to a display panel by a self-assembly method using an electromagnetic field is described.

[0137] The assembly substrate 200 described later may function as a panel substrate 200 a in a display device after the light emitting device is assembled, but the embodiment is not limited thereto.

[0138] Reference Fig. 9 , the semiconductor light emitting device 150 can be put into the chamber 1300 filled with the fluid 1200, and the semiconductor light emitting device 150 can be moved to the assembly substrate 200 by the magnetic field generated by the assembly device 1100. At this time, the light emitting device 150 close to the assembly hole 207H of the assembly substrate 200 can be assembled to the assembly hole 207H by the dielectrophoretic force generated by the electric field of the assembly line. The fluid 1200 can be water, such as ultrapure water, etc., but is not limited thereto. The chamber can be called a sink, a vessel, a container, etc.

[0139] After the semiconductor light emitting device 150 is introduced into the chamber 1300, the assembly substrate 200 may be disposed on the chamber 1300. According to an embodiment, the assembly substrate 200 may also be introduced into the chamber 1300.

[0140] As shown in the figure, the semiconductor light emitting device 150 may be implemented as a vertical type semiconductor light emitting device, but is not limited thereto, and a horizontal type light emitting device may be employed.

[0141] The semiconductor light emitting device 150 may include a magnetic layer (not shown) having a magnetic body. The magnetic layer may include a magnetic metal such as nickel (Ni). Since the semiconductor light emitting device 150 put into the fluid includes a magnetic layer, it can be moved to the assembly substrate 200 by the magnetic field generated by the assembly device 1100. The magnetic layer may be arranged on the upper side, the lower side, or both sides of the light emitting device.

[0142] On the other hand, the first assembly line 201 and the second assembly line 202 may form an electric field as an AC voltage is applied, and the inserted semiconductor light emitting device 150 may be fixed to the assembly hole 207H by the dielectrophoretic force generated by the electric field. The interval between the first assembly line 201 and the second assembly line 202 may be smaller than the width of the semiconductor light emitting device 150 and the width of the assembly hole 207H, so that the assembly position of the semiconductor light emitting device 150 using the electric field can be fixed more accurately.

[0143] An insulating layer 215 is formed on the first assembly line 201 and the second assembly line 202, which can protect the first assembly line 201 and the second assembly line 202 from the influence of the fluid 1200 and prevent the leakage of the current flowing in the first assembly line 201 and the second assembly line 202. For example, the insulating layer 215 can be formed of an inorganic insulator such as silicon dioxide, aluminum oxide, or an organic insulator as a single layer or multiple layers. The insulating layer 215 can have a minimum thickness for preventing the first assembly line 201 and the second assembly line 202 from being damaged when assembling the semiconductor light-emitting device 150, and can have a maximum thickness for stably assembling the semiconductor light-emitting device 150.

[0144] A partition wall 207 may be formed on the upper portion of the insulating layer 215 . A portion of the partition wall 207 may be located above the first and second assembly lines 201 and 202 , and the remaining portion may be located above the assembly substrate 200 .

[0145] On the other hand, when manufacturing the assembly substrate 200 , by removing a portion of the partition wall formed on the upper portion of the insulating layer 215 , an assembly hole 207H for each semiconductor light emitting device 150 to be coupled and assembled to the assembly substrate 200 may be formed.

[0146] The assembly substrate 200 is formed with assembly holes 207H for combining the plurality of semiconductor light emitting devices 150, and the surface formed with the assembly holes 207H can be in contact with the fluid 1200. The assembly holes 207H can guide the accurate assembly position of the semiconductor light emitting device 150.

[0147] On the other hand, the assembly hole 207H may have a shape and size corresponding to the shape of the semiconductor light emitting device 150 to be assembled to the corresponding position, thereby preventing other semiconductor light emitting devices from being assembled to the assembly hole 207H or plural semiconductor light emitting devices from being assembled to the assembly hole 207H.

[0148] Refer again Fig. 9 After the assembly substrate 200 is disposed in the chamber, the assembly device 1100 applying a magnetic field may move along the assembly substrate 200. The assembly device 1100 may be a permanent magnet or an electromagnet.

[0149] In order to maximize the area affected by the magnetic field within the fluid 1200, the assembly device 1100 may move in contact with the assembly substrate 200. According to an embodiment, the assembly device 1100 may include a plurality of magnetic bodies, or may also include a magnetic body having a size corresponding to the assembly substrate 200. In this case, the moving distance of the assembly device 1100 may also be limited within a specified range.

[0150] Under the effect of the magnetic field generated by the assembly apparatus 1100 , the semiconductor light emitting device 150 within the chamber 1300 may move toward the assembly apparatus 1100 and the assembly substrate 200 .

[0151] When the semiconductor light emitting device 150 moves toward the assembly device 1100 , it can enter the assembly hole 207H and be fixed under the action of the dielectrophoretic force formed by the electric field between the assembly lines 201 and 202 .

[0152] Specifically, the first assembly line 201 and the second assembly line 202 can use an AC power supply to form an electric field, and the electric field can be used to form a dielectrophoretic force between the assembly lines 201 and 202. The semiconductor light emitting device 150 can be fixed to the assembly hole 207H on the assembly substrate 200 by using the dielectrophoretic force.

[0153] At this time, a predetermined solder layer (not shown) is formed between the light emitting device 150 mounted on the mounting hole 207H of the mounting substrate 200 and the assembly wires 201 and 202 , and the bonding strength of the light emitting device 150 can be improved.

[0154] In addition, after assembly, a mold layer (not shown) may be formed in the assembly hole 207H of the assembly substrate 200. The mold layer may be a transparent resin or a resin containing a reflective material or a scattering material.

[0155] By using the above-mentioned self-assembly method using an electromagnetic field, the time required to assemble each semiconductor light-emitting device to a substrate can be greatly shortened, thereby enabling a large-area high-pixel display to be realized more quickly and economically.

[0156] Below, refer to Figures 10 to 37 , various embodiments for solving the above problems are described. The following omitted description can be seen by Figures 1 to 9 It can be easily understood by referring to the above description related to the accompanying drawings.

[0157] Fig.10 It is a top view showing the display device of the embodiment.

[0158] Reference Fig.10 In the display device 300 according to the embodiment, on the substrate ( Fig.11 A plurality of sub-pixels PX1, PX2, and PX3 may be defined on the substrate 310. The plurality of sub-pixels PX1, PX2, and PX3 are used to constitute a unit pixel PX, and a plurality of pixels PX may be arranged on the substrate 310. The plurality of pixels PX may be arranged in a matrix, but is not limited thereto.

[0159] The first sub-pixel PX1 may output a first color light, the second sub-pixel PX2 may output a second color light, and the third sub-pixel PX3 may output a third color light. The first color light, the second color light, and the third color light may have wavelength bands different from each other. For example, the first color light may include red light, the second color light may include green light, and the third color light may include blue light. Thus, a full-color image may be displayed by red light, green light, and blue light. Although not shown in the figure, the unit pixel PX may also have an additional sub-pixel that outputs white light. By adding sub-pixels, the brightness of the unit pixel PX may be increased to improve the contrast.

[0160] A plurality of assembly holes 340H1, 340H2, and 340H3 may be provided on the substrate 310. The plurality of assembly holes 340H1, 340H2, and 340H3 are grooves or recesses that are recessed inward and may be formed on the partition wall ( Fig.11 of 340).

[0161] The plurality of assembly holes 340H1, 340H2, 340H3 may be respectively provided in the plurality of sub-pixels PX1, PX2, PX3. As an example, the first assembly hole 340H1 may be provided in the first sub-pixel PX1, the second assembly hole 340H2 may be provided in the second sub-pixel PX2, and the third assembly hole 340H3 may be provided in the third sub-pixel PX3. As another example, at least two first assembly holes 340H1 may be provided in the first sub-pixel PX1, more than two second assembly holes 340H2 may be provided in the second sub-pixel PX2, and more than two third assembly holes 340H3 may be provided in the third sub-pixel PX3.

[0162] A plurality of semiconductor light emitting devices 150-1, 150-2, and 150-3 may be disposed on the substrate 310. As an example, the first semiconductor light emitting device 150-1 may be disposed in the first sub-pixel PX1, the second semiconductor light emitting device 150-2 may be disposed in the second sub-pixel PX2, and the third semiconductor light emitting device 150-3 may be disposed in the third sub-pixel PX3. As another example, at least two first semiconductor light emitting devices 150-1 may be disposed in the first sub-pixel PX1, more than two second semiconductor light emitting devices 150-2 may be disposed in the second sub-pixel PX2, and more than two third semiconductor light emitting devices 150-3 may be disposed in the third sub-pixel PX3.

[0163] For example, the first semiconductor light emitting device 150-1 can be configured in the first assembly hole 340H1 on the first subpixel PX1, the second semiconductor light emitting device 150-2 can be configured in the second assembly hole 340H2 on the second subpixel PX2, and the third semiconductor light emitting device 150-3 can be configured in the third assembly hole 340H3 on the third subpixel PX3.

[0164] The first, second and third semiconductor light emitting devices 150-1, 150-2 and 150-3 disposed in the first, second and third subpixels PX1, PX2 and PX3 need to be fixed and electrically connected to the first, second and third subpixels PX1, PX2 and PX3.

[0165] In an embodiment, the first semiconductor light emitting device 150 - 1 , the second semiconductor light emitting device 150 - 2 , and the third semiconductor light emitting device 150 - 3 may be fixed and electrically connected to each other at the same time using the same process.

[0166] Through each of the plurality of connection electrodes 370-1, 370-2, 370-3, the sides of the plurality of semiconductor light emitting devices 150-1, 150-2, 150-3 and the substrate 310 can be electrically connected. Specifically, the first assembly line ( Fig.11 The drawings show that the sides of the plurality of semiconductor light emitting devices 150-1, 150-2, and 150-3 are connected to the first assembly line 321 and the second assembly line 322, but they can also be connected to the first assembly line 321 or the second assembly line 322.

[0167] For example, in the case where the sides of the plurality of semiconductor light emitting devices 150-1, 150-2, and 150-3 are connected to the first assembly line 321 and the second assembly line 322, as shown in FIG. Fig.10As shown, each of the plurality of connection electrodes 370-1, 370-2, 370-3 can be arranged along the periphery of each of the plurality of semiconductor light emitting devices 150-1, 150-2, 150-3, thereby forming a closed loop. When connected to the first assembly line 321 or the second assembly line 322, each of the plurality of connection electrodes 370-1, 370-2, 370-3 can be arranged along the periphery of each of the plurality of semiconductor light emitting devices 150-1, 150-2, 150-3 on the first assembly line 321 or the second assembly line 322, thereby forming an open loop in a hemispherical shape.

[0168] The first connection electrode 370-1 may electrically connect the side of the first semiconductor light emitting device 150-1 and the first and second assembly lines 321 and 322 on the first sub-pixel PX1. The second connection electrode 370-2 may electrically connect the side of the second semiconductor light emitting device 150-2 and the first and second assembly lines 321 and 322 on the second sub-pixel PX2. The third connection electrode 370-3 may electrically connect the side of the third semiconductor light emitting device 150-3 and the first and second assembly lines 321 and 322 on the third sub-pixel PX3.

[0169] Although not shown, each of the plurality of semiconductor light emitting devices 150-1, 150-2, and 150-3 may be fixed by a fixing member ( Fig.11 380) is fixed to the substrate 310, specifically the insulating layer 330.

[0170] In this case, the plurality of connection electrodes 370-1, 370-2, 370-3 and the fixing member 380 can be simultaneously formed using the same metal powder through a series of processes, namely, a coating process and a melting process. For example, the plurality of connection electrodes 370-1, 370-2, 370-3 and the fixing member 380 can be formed of at least one metal substance.

[0171] By using a series of processes, namely a coating process and a melting process, with the same metal powder, even if the gap G between the outer side surface of the semiconductor light emitting device 150-1 and the inner side surface of the assembly hole 340H1 is very narrow after the semiconductor light emitting device 150-1 is assembled in the assembly hole 340H1, the connecting electrodes 370-1, 370-2, and 370-3 can be formed without disconnection, and the semiconductor light emitting device 150-1 is firmly fixed to the insulating layer 330 by the fixing member 380 formed below the lower side of the semiconductor light emitting device 150-1.

[0172] Although detailed description will be given later, by applying a solution containing at least one metal particle (powder), the solution flows downward through the gap G by gravity and fills the assembly hole 340H1, and the metal particles can be melted by a melting process and simultaneously form the connection electrodes 370-1, 370-2, 370-3 and the fixing member 380 in the assembly hole 340H1. When the gap G between the outer side surface of the semiconductor light emitting device 150-1 and the inner side surface of the assembly hole 340H1 is 1.5 microns or less, the connection electrodes 370-1, 370-2, 370-3 can also be formed without disconnection, thereby achieving high resolution or ultra-high resolution and improving product reliability.

[0173] On the first subpixel PX1, the first connection electrode 370-1 may be spaced apart from the fixing member 380, but may also be in contact with each other. On the second subpixel PX2, the second connection electrode 370-2 may be spaced apart from the fixing member 380, but may also be in contact with each other. On the third subpixel PX3, the third connection electrode 370-3 may be spaced apart from the fixing member 380, but may also be in contact with each other.

[0174] Hereinafter, a method and structure for simultaneously forming a plurality of connection electrodes 370 - 1 , 370 - 2 , 370 - 3 and a fixing member 380 will be described through various embodiments.

[0175] Fig.11 is a cross-sectional view showing the first sub-pixel of the first embodiment.

[0176] The second subpixel PX2 and the third subpixel PX3 each have the same structure as the first subpixel PX1 except for the first semiconductor light emitting device 150-1 and the second semiconductor light emitting device 150-2 as the light emitting source. Therefore, the structures of the second subpixel PX2 and the third subpixel PX3 can be easily understood from the structure of the first subpixel PX1.

[0177] Hereinafter, the first insulating layer 330 may be mixed with an insulating layer, the first semiconductor light emitting device 150 - 1 may be mixed with a semiconductor light emitting device, and the first assembly hole 340H1 may be mixed with an assembly hole.

[0178] Reference Fig.11 , the first subpixel PX1 of the first embodiment may include a substrate 310, a first group assembly line 321, a second group assembly line 322, an insulating layer 330, a partition wall 340, a semiconductor light emitting device 150-1, a fixing member 380, and a connection electrode 370-1.

[0179] The substrate 310 may be a supporting member that supports components on the substrate 310 or a protective member that protects the components.

[0180] The first group of assembly lines 321 and the second group of assembly lines 322 can be arranged on the substrate 310. For example, the first group of assembly lines 321 and the second group of assembly lines 322 can be arranged on the same layer. For example, the first group of assembly lines 321 and the second group of assembly lines 322 can be in contact with the top surface of the substrate 310, but are not limited to this. For example, the first group of assembly lines 321 and the second group of assembly lines 322 can be arranged side by side with each other. The first group of assembly lines 321 and the second group of assembly lines 322 can play a role in assembling the semiconductor light emitting device 150-1 into the assembly hole 340H1 in a self-assembly manner. That is, during self-assembly, an electric field is generated between the first group of assembly lines 321 and the second group of assembly lines 322 by supplying a voltage to the first group of assembly lines 321 and the second group of assembly lines 322, and the moving semiconductor light emitting device 150-1 can be assembled with the aid of the assembly device ( Fig. 9 1100) is assembled into the assembly hole 340H1.

[0181] The insulating layer 330 may be disposed on the substrate 310. For example, the insulating layer 330 may be composed of an inorganic substance or an organic substance. For example, the insulating layer 330 may be composed of a substance having a dielectric constant related to the dielectrophoretic force, thereby contributing to the magnitude of the dielectrophoretic force formed between the first group of assembly lines 321 and the second group of assembly lines 322. The insulating layer 330 may protect the first group of assembly lines 321 and the second group of assembly lines 322.

[0182] The partition wall 340 may be disposed on the first assembly line 321 and the second assembly line 322. The partition wall 340 may have an assembly hole 340H1 for assembling the semiconductor light emitting device 150-1. For example, the insulating layer 330 may be exposed in the assembly hole 340H1. For example, the bottom surface of the assembly hole 340H1 may be the top surface of the insulating layer 330.

[0183] The thickness of the partition wall 340 may be determined in consideration of the thickness of the semiconductor light emitting device 150-1. For example, the thickness of the partition wall 340 may be less than the thickness of the semiconductor light emitting device 150-1. Therefore, the upper side of the semiconductor light emitting device 150-1 may be located at a higher position than the top surface of the partition wall 340. That is, the upper side of the semiconductor light emitting device 150-1 may protrude from the top surface of the partition wall 340 toward the upper direction. As another example, the thickness of the partition wall 340 may also be similar to or the same as the thickness of the semiconductor light emitting device 150-1.

[0184] The size of the assembly hole 340H1 may be determined in consideration of a tolerance margin for forming the assembly hole 340H1 and a margin for making it easy for the semiconductor light emitting device 150-1 to be assembled into the assembly hole 340H1. For example, the size of the assembly hole 340H1 may be larger than the size of the semiconductor light emitting device 150-1. If the size of the assembly hole 340H1 is too large, the size of the sub-pixel PX1 is increased, which may hinder the realization of high resolution. Therefore, for example, when the semiconductor light emitting device 150-1 is assembled to the center of the assembly hole 340H1, the distance between the outer side surface of the semiconductor light emitting device 150-1 and the inner side surface of the assembly hole 340H1 may be 1.5 μm or less, but is not limited thereto. Thus, high resolution or ultra-high resolution can be achieved.

[0185] For example, the assembly hole 340H1 may have a shape corresponding to the shape of the semiconductor light emitting device 150-1. For example, when the semiconductor light emitting device 150-1 is circular, the assembly hole 340H1 may also be circular. For example, when the semiconductor light emitting device 150-1 is rectangular, the assembly hole 340H1 may also be rectangular.

[0186] On the other hand, the semiconductor light emitting device 150 - 1 may be disposed in the assembly hole 340H1 .

[0187] As described above, the semiconductor light emitting device 150-1 can emit the first color light, that is, red light. In this case, the second semiconductor light emitting device 150-2 on the second subpixel PX2 can emit green light, and the third semiconductor light emitting device 150-3 on the third subpixel PX3 can emit blue light, but is not limited thereto.

[0188] For example, during self-assembly, Fig. 9 The first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 of the embodiment 1300 can be simultaneously moved by the same assembling device 1100 and assembled into the corresponding sub-pixel ( Fig.10 The respective assembly holes 340H1, 340H2, 340H3 of PX1, PX2, PX3).

[0189] When the sizes of the assembly holes 340H1, 340H2, 340H3 of the sub-pixels PX1, PX2, and PX3 are the same, the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 may not be assembled to the assembly holes 340H1, 340H2, and 340H3 to which they should be assembled, but may be assembled to other assembly holes. In order to eliminate this problem, the shapes of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 may be changed, and the assembly holes 340H1, 340H2, and 340H3 may be formed corresponding to the shapes of the different first semiconductor light emitting devices 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3. Therefore, the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 having different shapes are respectively assembled into the assembly holes 340H1, 340H2 and 340H3 corresponding to their own shapes, thereby preventing assembly defects.

[0190] The semiconductor light emitting device 150 - 1 of the embodiment may be a vertical type semiconductor light emitting device.

[0191] like Fig.11 As shown, the semiconductor light emitting device 150-1 may include light emitting portions 151, 152, 153, an electrode 154, and a passivation layer 157. The semiconductor light emitting device 150-1 may also include more components.

[0192] The light emitting portions 151, 152, and 153 may include a first conductive semiconductor layer 151, an active layer 152, and a second conductive semiconductor layer 153, but may also include more components. The first conductive semiconductor layer 151 may include a first conductive dopant, and the second conductive semiconductor layer 153 may include a second conductive dopant. For example, the first conductive dopant may be an n-type dopant such as silicon (Si), and the second conductive dopant may be a p-type dopant such as boron (B).

[0193] The electrode 154 may be disposed at a lower side of the first conductive type semiconductor layer 151. The electrode 154 may include at least one layer.

[0194] In an embodiment, the electrode 154 may be disposed on a side portion of the first conductive semiconductor layer 151 to connect with the connection electrode 370 - 1 . In addition, the electrode 154 may be disposed on a lower side of the first conductive semiconductor layer 151 .

[0195] Although not shown, another electrode may be disposed on an upper side of the second conductive type semiconductor layer 153. The other electrode may include a transparent conductive layer such as ITO.

[0196] The passivation layer 157 can protect the light-emitting parts 151, 152, and 153. For example, the passivation layer 157 can surround the light-emitting parts 151, 152, and 153. The passivation layer 157 has a dielectric constant, so that the magnitude of the dielectrophoretic force formed between the first group of assembly lines 321 and the second group of assembly lines 322 during self-assembly. For example, by configuring the electrode 154 on the lower side of the light-emitting parts 151, 152, and 153, and the remaining side portions of the light-emitting parts 151, 152, and 153 are surrounded by the passivation layer 157, the dielectrophoretic force formed in the assembly hole 340H1 can be adjusted so that the first conductive semiconductor layer 151 faces the assembly hole 340H1 and the second conductive semiconductor layer 153 faces the front. As a result, the semiconductor light-emitting device 150-1 is accurately assembled to the assembly hole 340H1 without flipping.

[0197] On the other hand, although described later, the connection electrode 370-1 and the fixing member 380 are formed of the same metal and by the same deposition process, whereby the fixing and electrical connection of the semiconductor light emitting device 150-1 can be achieved simultaneously. For example, the connection electrode 370-1 and the fixing member 380 can be formed of the same metal. The connection electrode 370-1 and the fixing member 380 can be formed of at least one metal. The fixing member can be referred to as a fixing pattern or a fixing layer.

[0198] The connection electrode 370-1 may be disposed between the outer side surface of the semiconductor light emitting device 150-1 and the inner side surface of the assembly hole 340H1. The connection electrode 370-1 may be disposed along the periphery of the semiconductor light emitting device 150-1 in the assembly hole 340H1. The side of the connection electrode 370-1 may contact the side of the semiconductor light emitting device 150-1, that is, the side of the electrode 154, and the lower side of the connection electrode 370-1 may penetrate the insulating layer 330 and contact the top surface of each of the first group assembly line 321 and / or the second group assembly line 322.

[0199] On the other hand, a portion 370-1a of the connection electrode 370-1 may extend between the semiconductor light emitting device 150-1 and the insulating layer 330. By extending a portion 370-1a of the connection electrode 370-1 between the bottom surface of the semiconductor light emitting device 150-1 and the top surface of the insulating layer 330, fixation of the semiconductor light emitting device 150-1 may be enhanced by the connection electrode 370-1.

[0200] The fixing member 380 may be disposed in the groove 331. The groove 331 may be formed in the insulating layer 330. The groove 331 may be connected to the assembly hole 340H1.

[0201] The fixing member 380 may be disposed between the first group of assembly lines 321 and the second group of assembly lines 322. The fixing member 380 may be disposed between the bottom surface of the semiconductor light emitting device 150-1 and the top surface of the insulating layer 330. The fixing member 380 may be disposed between the first group of assembly lines 321 and the second group of assembly lines 322 and between the bottom surface of the semiconductor light emitting device 150-1 and the top surface of the insulating layer 330.

[0202] As an example, the groove 331 may be formed on the insulating layer 330 between the first assembly line 321 and the second assembly line 322. The depth of the groove 331 may be determined according to the separation distance between the first assembly line 321 and the second assembly line 322, the thickness of the insulating layer 330, the thickness of the first assembly line 321, and / or the thickness of the second assembly line 322. The thickness of the insulating layer 330 may be less than the thickness of the first assembly line 321 or the thickness of the second assembly line 322.

[0203] As another example, although not shown, the groove 331 may be formed by etching the top surface of the insulating layer 330. In the case where the thickness of the insulating layer 330 is greater than the thickness of the first assembly line 321 or the thickness of the second assembly line 322, the groove 331 may be formed by etching a portion of the top surface of the insulating layer 330 corresponding to the first assembly line 321 and the second assembly line 322.

[0204] As another example, although not shown, a portion of the top / bottom surface of the insulating layer 330 corresponding to the first and second assembly lines 321 and 322 may be etched through to expose the top surface of the substrate 310 , thereby forming the groove 331 .

[0205] On the other hand, the connection electrode 370-1 and the fixing member 380 may include Fig.12 and Fig.13 The illustrated assembly 410 is a block 400 in which a plurality of conductive nanoparticles 401, 402, 403 adhere to each other.

[0206] For example, the conductive nanoparticles may include electrode particles 401 , magnetization particles 402 , reflection particles 403 , etc., but are not limited thereto.

[0207] The electrode particles 401 may be a metal with excellent electrical conductivity, such as copper (Cu). The electrode particles 401 may serve as an electrode for smooth current flow between the semiconductor light emitting device 150-1 and the first assembly line 321 or the second assembly line 322. The magnetizing particles 402 may be a metal with excellent magnetization properties, such as nickel (Ni). The magnetizing particles 402 may be easily magnetized by a magnet during self-assembly so that the semiconductor light emitting device 150-1 can be quickly and accurately moved to the assembly hole 340H1 of the corresponding sub-pixel PX1 on the substrate 310. The reflective particles 403 may be a metal with excellent reflective properties, such as aluminum (Al). The reflective particles 403 may reflect the light generated in the semiconductor light emitting device 150-1 forward, thereby improving the light efficiency and brightness of the semiconductor light emitting device 150-1.

[0208] By the melting process, the electrode powder containing the electrode particles 401, the magnetizing powder containing the magnetizing particles 402, and the magnetizing powder containing the reflection particles 403 dispersed in the solution can be melted, and Fig.12 As shown, the electrode particles 401, the magnetizing particles 402, and the reflection particles 403 adhere to each other. The surface shapes of the electrode particles 401, the magnetizing particles 402, and the reflection particles 403 melted by the melting process can be various, such as a prescribed arc surface or a random arc surface, a concave and convex surface, etc. The solution can contain an organic solvent or a solvent such as water and various additives. The additives can include a dispersant, an organic binder, a surfactant, etc.

[0209] The electrode particles 401, magnetizing particles 402, and reflection particles 403 may be adhered in one dimension, two dimensions, or three dimensions. A plurality of electrode particles 401, magnetizing particles 402, or reflection particles 403 may be adhered in a row. One electrode particle 401, magnetizing particles 402, and reflection particles 403 may be adhered to each other. A plurality of magnetizing particles 402 may be adhered to each other between adjacent electrode particles 401. A plurality of magnetizing particles 402 may be adhered to each other between adjacent magnetizing particles 402. A plurality of electrode particles 401 may be adhered to each other between adjacent reflection particles 403. The electrode particles 401, magnetizing particles 402, and reflection particles 403 may be adhered to each other in various combinations.

[0210] The electrode particles 401, the magnetizing particles 402, and the reflecting particles 403 may be attached to each other in various combinations to form a Fig.12 Block 400 is shown. A large number of blocks 400 can be combined to form Fig.13Although not shown, the electrode particles 401, the magnetizing particles 402, and the reflecting particles 403 may be attached to each other in various combinations, so that the block 400 may be skipped to form the aggregate 410.

[0211] By forming such an assembly 410 with a predetermined thickness, it can become the connection electrode 370-1 or the fixing member 380. The predetermined thickness can be a thickness set for the connection electrode 370-1 or the fixing member 380.

[0212] On the other hand, Fig.14 As shown, the density of the magnetizing particles 402 may increase from the top surface 370B of the connection electrode 370 - 1 toward the bottom surface 370A of the connection electrode 370 - 1 or away from the top surface 370B of the connection electrode 370 - 1 .

[0213] In order to facilitate the flow of current, preferably, the electrode particles adhere to each other so as to be in electrical contact. However, even if there are a large number of electrode particles 401 in the connection electrode 370-1, there will still be a large number of electrode particles 401 that are not adhered to each other in the connection electrode 370-1. In this case, the flow of current is difficult to be smooth, which may directly cause the brightness of the semiconductor light emitting device 150-1 to decrease.

[0214] In order to solve this problem, a solution in which electrode powder, magnetizing powder and reflective powder are dispersed may be applied to the substrate 310, and then a magnet may be placed below the substrate 310. The magnet allows the electrode powder, magnetizing powder and reflective powder dispersed in the applied solution to quickly drop toward the substrate 310.

[0215] Afterwards, the electrode particles 401, magnetizing particles 402, and reflecting particles 403 of the electrode powder, magnetizing powder, and reflecting powder can be melted by a melting process to form the connecting electrode 370-1 and the fixing member 380. Since the magnetizing powder is dispersed in large quantities in the area adjacent to the substrate 310 due to the magnet, Fig.15 As shown, during the melting process, the electrode particles 401 are electrically connected via the magnetizing particles 402 contained in the magnetizing powder, thereby enabling smooth current flow.

[0216] Compared with the upper region or the middle region of the connection electrode 370-1, the lower region of the connection electrode 370-1 contains more magnetizing particles 402, so that the electrode particles 401 can be electrically connected through these magnetizing particles 402. Therefore, in the connection electrode 370-1, the resistance of the lower region is lower than that of the upper region or the middle region, and the lower region of the connection electrode 370-1 can be connected to the first group of assembly lines 321 and / or the second group of assembly lines 322. Therefore, through the lower region of the connection electrode 370-1, a smoother current flow can be achieved between the semiconductor light emitting device 150-1 and the first group of assembly lines 321 and / or the second group of assembly lines 322, which can help improve the brightness of the semiconductor light emitting device 150-1.

[0217] On the other hand, as described above, the connection electrode 370-1 of the embodiment is formed by melting various powders contained in the solution through a melting process, so the top surface of the connection electrode 370-1 can have various shapes. For example, the top surface of the connection electrode 370-1 can have an uneven surface ( Fig.16 420) or curved surface ( Fig.17 430) and other shapes.

[0218] Refer again Fig.11 , the first subpixel PX1 of the first embodiment may include a second insulating layer 350 and an electrode wiring 360 .

[0219] The second insulating layer 350 may protect the semiconductor light emitting device 150-1. The second insulating layer 350 may be a planarization layer for preventing the electrode wiring 360 from being electrically disconnected. That is, the top surface of the second insulating layer 350 may have a flat straight surface. The second insulating layer 350 may be formed of an organic material, but is not limited thereto.

[0220] The second insulating layer 350 may be disposed on the partition wall 340. The second insulating layer 350 may be disposed on the semiconductor light emitting device 150-1. The second insulating layer 350 may be disposed between the outer side surface of the semiconductor light emitting device 150-1 and the inner side surface of the assembly hole 340H1.

[0221] The electrode wiring 360 may be disposed on the second insulating layer 350 and electrically connected to the semiconductor light emitting device 150 - 1 through the second insulating layer 350 .

[0222] For example, the electrode wiring 360 may be electrically connected to the second conductive semiconductor layer 153 through the second insulating layer 350 and the passivation layer 157 of the semiconductor light emitting device 150-1. When a second electrode is disposed on the second conductive semiconductor layer 153, the electrode wiring 360 may be connected to the second electrode.

[0223] The first group assembly lines 321 and / or the second group assembly lines 322 may be named lower electrode wirings, and the electrode wirings 360 may be named upper electrode wirings.

[0224] In the first subpixel PX1 of the first embodiment thus constructed, first color light, for example, red light, can be emitted from the semiconductor light emitting device 150 - 1 by applying a positive polarity voltage to the electrode wiring 360 and a negative polarity voltage to the first group assembly line 321 and / or the second group assembly line 322 .

[0225] Although not shown, the second color light, such as green light, can be emitted from the second semiconductor light emitting device 150-2 of the second sub-pixel PX2, and the third color light, such as blue light, can be emitted from the third semiconductor light emitting device 150-3 of the third sub-pixel PX3. Thus, a full-color image can be displayed in the unit pixel PX composed of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel.

[0226] Hereinafter, the display manufacturing process of the embodiment will be described.

[0227] Fig.18 It is a diagram showing the manufacture of a display device using a backplane substrate.

[0228] like Fig.18 As shown in (a), a backplane substrate 300A may be prepared. The backplane substrate 300A may include a plurality of sub-pixels PX1, PX2, and PX3, and an assembly hole 340H1 may be formed in each of the plurality of sub-pixels PX1, PX2, and PX3. For example, the plurality of sub-pixels PX1, PX2, and PX3 may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3, but is not limited thereto. In this case, a unit pixel PX may be composed of a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. On the backplane substrate 300A, the plurality of pixels PX may be arranged in a matrix.

[0229] like Fig.18 As shown in (b), a plurality of semiconductor light emitting devices 150-1, 150-2, and 150-3 may be assembled on the backplane substrate 300A using a self-assembly process. The plurality of semiconductor light emitting devices may include a first semiconductor light emitting device 150-1, a second semiconductor light emitting device 150-2, and a third semiconductor light emitting device 150-3. The first semiconductor light emitting device 150-1 may be assembled in the first assembly hole 340H1 of the first sub-pixel PX1, the second semiconductor light emitting device 150-2 of the second sub-pixel PX2 may be assembled in the second assembly hole 340H2 of the second sub-pixel PX2, and the third semiconductor light emitting device 150-3 may be assembled in the third assembly hole 340H3 of the third sub-pixel PX3.

[0230] During self-assembly, the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 can be assembled on the backplane substrate 300A simultaneously or individually. By making the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 have different shapes, when the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 are assembled on the backplane substrate 300A at the same time, it is possible to prevent the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 from being mistakenly assembled to other assembly holes that are not their own assembly holes, but this is not limited to this.

[0231] like Fig.18 As shown in (c), a plurality of connection electrodes 370-1, 370-2, 370-3 may be formed in a plurality of assembly holes 340H1, 340H2, 340H3 by a coating process and a melting process of a solution containing metal powder. The first connection electrode 370-1 may be formed at the periphery of the first semiconductor light emitting device 150-1 in the first assembly hole 340H1 of the first sub-pixel PX1, the second connection electrode 370-2 may be formed at the periphery of the second semiconductor light emitting device 150-2 in the second assembly hole 340H2 of the second sub-pixel PX2, and the third connection electrode 370-3 may be formed at the periphery of the third semiconductor light emitting device 150-3 in the third assembly hole 340H3 of the third sub-pixel PX3.

[0232] Although not shown, a plurality of fixing members 380 may be formed in the plurality of sub-pixels PX1 , PX2 , and PX3 simultaneously with the plurality of connection electrodes 370 - 1 , 370 - 2 , and 370 - 3 .

[0233] Figures 19 to 26 1 is a diagram showing a manufacturing process of the first sub-pixel according to the first embodiment.

[0234] Although the first subpixel PX1 is limited for the sake of convenience, the manufacturing process of the second subpixel PX2 and the third subpixel PX3 is also the same as the manufacturing process of the first subpixel PX1, so the manufacturing process of the second subpixel PX2 and the third subpixel PX3 can be easily understood from the manufacturing process of the first subpixel PX1.

[0235] like Fig.19As shown, a backplane substrate 300A may be prepared. A first group of assembly lines 321, a second group of assembly lines 322, and an assembly hole 340H1 may be configured on the backplane substrate 300A. The assembly hole 340H1 may vertically overlap a portion of the first group of assembly lines 321 and a portion of the second group of assembly lines 322. Thus, a dielectrophoretic force formed by the first group of assembly lines 321 and the second group of assembly lines 322 may be formed within the assembly hole 340H1.

[0236] On the other hand, a groove 331 may be formed at the bottom of the assembly hole 340H1. That is, the groove 331 may be connected to the assembly hole 340H1. The groove 331 may be formed in the insulating layer 330. The groove 331 may be formed in the insulating layer 330 corresponding to between the first group of assembly lines 321 and the second group of assembly lines 322. The size and depth of the groove 331 may be determined according to the thickness of the insulating layer 330, the thickness of each of the first group of assembly lines 321 and / or the second group of assembly lines 322, and the spacing distance between the first group of assembly lines 321 and the second group of assembly lines 322.

[0237] like Fig. 20 As shown, by applying voltage to the first group of assembly lines 321 and the second group of assembly lines 322, a dielectrophoretic force can be formed in the assembly hole 340H1. Although not shown, by moving the magnet located under the backplane, the semiconductor light emitting device 150-1 in the fluid on the backplane substrate 300A can move to the position of the assembly hole 340H1. The semiconductor light emitting device 150-1 can be assembled to the assembly hole 340H1 by the dielectrophoretic force.

[0238] like Fig.21 As shown, the insulating layer 330 in the assembly hole 340H1 can be removed by performing an etching process, thereby exposing a portion of the top surface of each of the first assembly line 321 and / or the second assembly line 322. At this time, a voltage is continuously applied to the first assembly line 321 and / or the second assembly line 322, so that the semiconductor light emitting device 150-1 assembled to the assembly hole 340H1 will not be separated from the assembly hole 340H1 due to the dielectrophoretic force.

[0239] like Fig. 22 As shown, a solution 411 in which metal powder is dispersed can be applied on the substrate 310. The solution 411 can contain an organic solvent or a solvent 405 such as water and various additives. Thus, the solution 411 can be manufactured by mixing metal powder or additives in the solvent 405. At this time, the solution 411 can be a low viscosity solution of 1000Cp or less.

[0240] As an organic solvent, acetone, ethanol, IPA, MEK, PGMEA, toluene, EC, EMC, DMC, etc. may be included. Metal powder may include electrode powder, magnetization powder, reflection powder, etc. The metal powder may be a low melting point nano powder having a melting point of 300°C or less and a size of 1 micron or less. Since the electrode powder needs to have a melting point of 300°C or less, it may include Sn, In, SnAg, SnCu, SnAu, SnBi, SnPb, etc. As an additive, a dispersant, an organic binder, a surfactant, etc. may be included.

[0241] If a melting process to be described below is performed under a process condition exceeding 300° C., electrical / optical characteristics of the semiconductor light emitting device 150 - 1 may be degraded.

[0242] The coated solution 411 may be formed not only in the assembly hole 340H1 but also on the partition wall 340. In addition, the coated solution 411 may be filled in the groove 331 at the bottom of the assembly hole 340H1 through between the semiconductor light emitting device 150-1 and the bottom of the assembly hole 340H1.

[0243] like Fig.23 As shown, by performing a drying process, the solvent 405 is volatilized from the applied solution 411, and the metal powder is left.

[0244] like Fig.24 As shown, a melting process is performed to melt metal powder, thereby forming a metal film 450. The metal film 450 may be formed as a connection electrode 370-1 and a fixing member 380. The melting process may be a heat treatment process or a laser irradiation process, but is not limited thereto.

[0245] The connection electrode 370 - 1 may be formed on the partition wall 340 and the semiconductor light emitting device 150 - 1 . The connection electrode 370 - 1 may be formed at the periphery of the semiconductor light emitting device 150 - 1 within the assembly hole 340H1 . The fixing member 380 may be formed at the groove 331 .

[0246] like Fig.25 As shown, the partition wall 340 and the connection electrode 370 - 1 on the semiconductor light emitting device 150 - 1 may be removed by performing an etching process, whereby the connection electrode 370 - 1 may be disposed only within the assembly hole 340H1 .

[0247] like Fig.26 As shown, the second insulating layer 350 may be formed on the substrate 310 , and the electrode wiring 360 may be formed on the second insulating layer 350 .

[0248] The second insulating layer 350 may be formed by depositing an insulating film on the substrate 310. At this time, the top surface of the second insulating layer 350 may have a flat straight surface by increasing the thickness of the second insulating layer 350. The electrode wiring 360 may penetrate the second insulating layer 350 and be connected to the upper side of the semiconductor light emitting device 150-1.

[0249] Through the manufacturing process described above, the display device 300 may be manufactured.

[0250] Fig. 27 is a cross-sectional view showing a first sub-pixel according to the second embodiment.

[0251] The second embodiment is similar to the first embodiment except for the third insulating layer 390. In the second embodiment, components having the same shape, structure and / or function as those of the first embodiment are given the same reference numerals, and detailed descriptions thereof are omitted.

[0252] Reference Fig. 27 The first subpixel PX1 of the second embodiment may include a substrate 310, a first group of assembly lines 321, a second group of assembly lines 322, a first insulating layer 330, a partition wall 340, a semiconductor light emitting device 150-1, a fixing member 380, a third insulating layer 390, a connecting electrode 370-1, a second insulating layer 350 and an electrode wiring 360.

[0253] Since the remaining components except the third insulating layer 390, namely the substrate 310, the first group of assembly lines 321, the second group of assembly lines 322, the first insulating layer 330, the partition wall 340, the semiconductor light emitting device 150-1, the fixing member 380, the connecting electrode 370-1, the second insulating layer 350 and the electrode wiring 360 have been described previously, a detailed description is omitted.

[0254] In the second embodiment, the third insulating layer 390 may be formed simultaneously with the connection electrode 370 - 1 and the fixing member 380 through the same melting process.

[0255] Although it will be described later, the solution applied to the substrate 310 is not only dispersed with a solvent, a metal powder, and an additive, but also dispersed with an organic powder. The solvent in the solution applied to the substrate 310 can be volatilized through a drying process. Afterwards, the metal powder is melted through a melting process to form a metal film, thereby forming a connecting electrode 370-1 and a fixing member 380. As the metal powder forms a metal film, the organic powder is pushed to the upper direction and solidified, thereby forming a third insulating layer 390. Therefore, the third insulating layer 390 can be formed by organic particles 413.

[0256] At this time, the organic powder that has not been pushed upward and remains in the metal film can form a plurality of blocks ( Fig.35 380a) or multiple articles ( Fig.36 380b). The plurality of blocks 380a are fine blocks of organic powder agglomerated, and the plurality of strips 380b can be formed by connecting the organic powder in a long direction. Some of the plurality of strips 380b can be connected to the third insulating layer 390. In the drawings, the strips 380b have a straight line shape along one direction, but can also be curved or disconnected in the middle.

[0257] Although not shown, organic powder corresponding to the plurality of blocks 380a may be evaporated and become pores containing air.

[0258] Therefore, the material of the third insulating layer 390 and the material of the blocks 380a or the strips 380b may be the same.

[0259] The third insulating layer 390 may be disposed on the connection electrode 370-1. The third insulating layer 390 may be disposed along the periphery of the semiconductor light emitting device 150-1 in the assembly hole 340H1. The top surface of the third insulating layer 390 may be the same as the top surface of the partition wall 340, but this is not limited. Although the drawings show that the bottom surface of the third insulating layer 390 has a flat straight surface, it may also have a curved non-uniform surface or an arc surface or a concave-convex surface.

[0260] According to the second embodiment, by performing a drying process and a melting process on the metal powder and the organic powder dispersed in the solution applied on the substrate 310 to simultaneously form the connection electrode 370-1, the fixing member 380 and the third insulating layer 390, the process time can be shortened and the process can be simplified. In addition, in addition to the fixing member 380, the semiconductor light emitting device 150-1 is more firmly fixed to the substrate 310 through the third insulating layer 390, thereby strengthening the fixation of the semiconductor light emitting device 150-1. That is, the semiconductor light emitting device 150-1 is fixed to the first insulating layer 330 through the fixing member 380, and the semiconductor light emitting device 150-1 is fixed to the partition wall 340 through the third insulating layer 390, thereby significantly strengthening the fixation of the semiconductor light emitting device 150-1, thereby improving the product reliability.

[0261] On the other hand, unlike the first embodiment, in the second embodiment, the height (or thickness) of the partition wall 340 may be smaller than the height (or thickness) of the semiconductor light emitting device 150 - 1 , but this is not limited.

[0262] The second insulating layer 350 may be disposed on the semiconductor light emitting device 150-1 and the partition wall 340. The second insulating layer 350 may be disposed on the third insulating layer 390. The top surface of the third insulating layer 390 is the same as the top surface of the partition wall 340, so the second insulating layer 350 having a flat straight surface on the top surface may be easily formed with a thin thickness.

[0263] Figures 28 to 34 1 is a diagram showing a manufacturing process of the first sub-pixel according to the second embodiment.

[0264] Figures 28 to 30 and Figures 19 to 21 Similarly, since it has been explained before, the detailed description is omitted.

[0265] like Figures 28 to 30 As shown, after preparing the backplane substrate 300A, the semiconductor light emitting device 150-1 is assembled on the substrate 310 using a self-assembly process, and then the first insulating layer 330 can be removed by performing an etching process to expose the first group of assembly lines 321 and / or the second group of assembly lines 322.

[0266] like Fig.31 As shown, a solution 411 in which metal powder, organic powder, solvent 405, additives, etc. are dispersed can be applied to substrate 310. The metal powder can include electrode powder containing electrode particles 401, magnetizing powder containing magnetizing particles 402, and reflective powder containing reflective particles 403. The organic powder can include organic particles 413.

[0267] The solution 411 may be coated on the partition wall 340 and the semiconductor light emitting device 150 - 1 . The solution 411 may be filled in the assembly hole 340H1 to the periphery of the semiconductor light emitting device 150 - 1 , and may also be filled in the groove 331 connected to the assembly hole.

[0268] Thereafter, a drying process may be performed to volatilize the solvent 405 .

[0269] like Fig.32 As shown, by performing a melting process, the connection electrode 370-1, the fixing member 380, and the third insulating layer 390 may be formed. The third insulating layer 390 may be formed on the connection electrode 370-1. The melting process may be a heat treatment process or a laser irradiation process, but is not limited thereto.

[0270] Through the melting process, the metal powder in contact with the first assembly line 321 and / or the second assembly line 322 is melted to form a metal film, which can be formed as the connection electrode 370-1. The metal powder on the partition wall 340 or the semiconductor light emitting device 150-1 is also melted and descends along the periphery of the semiconductor light emitting device 150-1, so that the thickness of the metal film can gradually become thicker and form the connection electrode 370-1 of the desired thickness.

[0271] The target thickness of the metal film may be a height that overlaps a portion of the passivation layer 157 of the semiconductor light emitting device 150-1 in the horizontal direction. To this end, the connection electrode 370-1 may electrically connect the first group of assembly wires 321 and / or the second group of assembly wires 322 to the electrode 154 of the semiconductor light emitting device 150-1. The desired thickness of the metal film may be obtained by adjusting the amount or concentration of the metal powder dispersed in the solution 411.

[0272] The metal powder on the partition wall 340 or the semiconductor light emitting device 150-1 is melted and falls along the periphery of the semiconductor light emitting device 150-1, so that the thickness of the metal film can be increased, and the organic powder located at the lower side of the assembly hole 340H1 is pushed to the upper direction by the metal film, so that the thickness of the organic film 460 can be increased. Thus, in the assembly hole 340H1, the metal film can be positioned at the lower side along the periphery of the semiconductor light emitting device 150-1, so that the connection electrode 370-1 can be formed, and the organic film 460 can be located on the metal film to form the third insulating layer 390. Although the organic film 460 can be formed as the third insulating layer 390 through a curing process, this is not limited.

[0273] As another example, the organic powder can be solidified without being pushed upward from the metal film, so that a plurality of blocks ( Fig.35 380a) or multiple articles ( Fig.36 The organic powder of the block 380a or the strip 380b may also be evaporated to form pores.

[0274] The metal powder filled in the groove 331 may be melted to form a metal film, which may be formed into a fixing member 380. The groove 331 may be filled with the metal film, so that the top surface of the fixing member 380 may contact the bottom surface of the semiconductor light emitting device 150-1. As another example, the metal film may fill a portion of the lower side of the groove 331, and an organic film solidified by organic powder may be filled thereon, thereby forming a fixing member 380 composed of a metal film and an organic film. As another example, a metal film is filled in the groove 331, and a block 380a (or point or pore) solidified by organic powder is formed in the metal film, thereby forming the fixing member 380.

[0275] It is also possible to form the third insulating layer 390 only on the assembly hole 340H1 without forming the third insulating layer 390 on the partition wall 340 or the semiconductor light emitting device 150 - 1 by adjusting the amount or concentration of the organic powder.

[0276] like Fig.33 As shown, by removing a portion of the upper side of the partition wall 340 and a portion of the upper side of the third insulating layer 390, the top surface of the partition wall 340 and the top surface of the third insulating layer 390 are located on the same horizontal plane. This is to facilitate the flattening process of the second insulating layer 350 formed by a subsequent process and serving as a flattening layer, but this process can also be omitted. By removing a portion of the upper side of the partition wall 340d and a portion of the upper side of the third insulating layer 390, the height (or thickness) of the partition wall 340 can be smaller than the height (or thickness) of the semiconductor light emitting device 150-1.

[0277] like Fig.34 As shown, the second insulating layer 350 may be formed by forming an organic film over the substrate 310. The second insulating layer 350 may be formed on the semiconductor light emitting device 150-1 and the partition wall 340, and may be formed along the periphery of the semiconductor light emitting device 150-1 within the assembly hole 340H1.

[0278] Afterwards, a metal film may be formed on the substrate 310 and patterned so that the electrode wiring 360 may be connected to the upper side of the semiconductor light emitting device 150-1 through the second insulating layer 350. Before forming the metal film, the second conductive semiconductor layer 153 may be exposed by removing the passivation layer 157 on the upper side of the semiconductor light emitting device 150-1.

[0279] Fig.37 is a cross-sectional view showing a first sub-pixel according to the fifth embodiment.

[0280] The fifth embodiment is similar to the first embodiment except that the fixing member 380 is connected to the connection electrode 370-1. In the fifth embodiment, the same reference numerals are given to the components having similar shapes, structures and functions as those of the first embodiment, and detailed descriptions are omitted. The descriptions omitted in the fifth embodiment can be easily understood from the first embodiment.

[0281] Reference Fig.37 The first subpixel PX1 of the fifth embodiment may include a substrate 310, a first group of assembly lines 321, a second group of assembly lines 322, a first insulating layer 330, a partition wall 340, a semiconductor light emitting device 150-1, a fixing member 380, a connecting electrode 370-1, a second insulating layer 350 and an electrode wiring 360.

[0282] In the fifth embodiment, the connection electrode 370 - 1 and the fixing member 380 may be simultaneously formed through the same melting process.

[0283] Unlike the first embodiment, in the fifth embodiment, the fixing member 380 may be connected to the connection electrode 370-1. The fixing member 380 may be connected to the connection electrode 370-1 at the lower side of the semiconductor light emitting device 150-1. In the assembly hole 340H1, the fixing member 380 and the connection electrode 370-1 may be integrally formed at the side and lower side of the semiconductor light emitting device 150-1.

[0284] The connection electrode 370 - 1 may be disposed not only at the periphery of the semiconductor light emitting device 150 - 1 , but also at the lower side of the semiconductor light emitting device 150 - 1 and connected to the fixing member 380 disposed in the groove 331 .

[0285] In the case where the semiconductor light emitting device 150-1 is assembled to the assembly hole 340H1 by the self-assembly process, the lower side of the semiconductor light emitting device 150-1 may be spaced apart from the insulating layer 330. That is, the semiconductor light emitting device 150-1 may be spaced apart from the insulating layer 330 by a prescribed distance above the insulating layer 330 without contacting the insulating layer 330. Thereafter, in the case where a solution in which metal powder, additives, etc. are dispersed in a solvent is applied to the substrate 310, the solution may descend along the periphery of the semiconductor light emitting device 150-1 in the assembly hole 340H1 and flow through the lower side of the semiconductor light emitting device 150-1 and the insulating layer 330 to fill the groove 331. Thereafter, the metal powder may be melted by performing a drying process and a melting process, whereby the connection electrode 370-1 formed at the periphery of the semiconductor light emitting device 150-1 in the assembly hole 340H1 may be connected to the fixing member 380 formed in the groove 331 through the lower side of the semiconductor light emitting device 150-1 and the insulating layer 330.

[0286] The thickness of the connection electrode 370 - 1 formed between the lower side of the semiconductor light emitting device 150 - 1 and the insulating layer 330 may be smaller than the depth of the groove 331 , but is not limited thereto.

[0287] The metal powder may include an electrode powder including the electrode particles 401 , a magnetizing powder including the magnetizing particles 402 , and a reflection powder including the reflection particles 403 .

[0288] The connection electrode 370-1 and / or the fixing member 380 may include a reflective layer by using the reflective particles 403 of the reflective powder. Since the connection electrode 370-1 and the fixing member 380 are disposed on the side and lower side of the semiconductor light emitting device 150-1, the light efficiency and brightness of the semiconductor light emitting device 150-1 can be improved by reflecting the light generated by the semiconductor light emitting device 150-1 forward.

[0289] On the other hand, the fifth embodiment may also be combined with the second to fourth embodiments.

[0290] On the other hand, the above-mentioned display device may be a display panel. That is, in the embodiment, the display device and the display panel may be understood in the same meaning. In the embodiment, the display device in a practical sense may include a display panel and a controller (or processor) capable of controlling the display panel in order to display an image.

[0291] The detailed descriptions described above should not be interpreted as limiting in all aspects, but should be understood as exemplary. The scope of the embodiments should be determined by reasonable interpretation of the appended claims, and all changes within the equivalent scope of the embodiments are included in the scope of the embodiments.

[0292] Industrial Applicability

[0293] The embodiment can be applied to the display field of displaying images or information. The embodiment can be applied to the display field of displaying images or information using semiconductor light emitting devices. The semiconductor light emitting device can be a micron-scale semiconductor light emitting device or a nano-scale semiconductor light emitting device.

[0294] For example, the embodiments can be applied to TVs, signs, mobile terminals such as mobile phones or smart phones, computer displays such as laptops or desktop computers, head-up displays for cars, backlight units for displays, displays for VR, AR or MR (mixed reality), light sources, etc.

Claims

1. A display device, wherein: include: substrate; A first group of assembly lines and a second group of assembly lines are arranged on the substrate; An insulating layer, disposed on the first assembly line group and the second assembly line group, having a groove; A partition wall, disposed on the first assembly line and the second assembly line, having an assembly hole connected to the groove; A semiconductor light emitting device is arranged in the assembly hole; A fixing member, disposed in the groove; as well as A connecting electrode, disposed between the outer side surface of the semiconductor light emitting device and the inner side surface of the assembly hole; The fixing member and the connection electrode include an aggregate of adhered masses in which a plurality of conductive nanoparticles adhere to each other.

2. The display device according to claim 1, wherein: The plurality of conductive nanoparticles include at least one of electrode particles, magnetization particles, and reflection particles.

3. The display device according to claim 2, wherein: The density of the magnetizing particles increases from the top surface of the connection electrode toward the bottom.

4. The display device according to claim 2, wherein: Adjacent electrode particles are adhered via the magnetizing particles.

5. The display device according to claim 1, wherein: A portion of the connection electrode extends between the semiconductor light emitting device and the insulating layer.

6. The display device according to claim 1, wherein: The top surface of the connecting electrode has a non-uniform surface.

7. The display device according to claim 1, wherein: The top surface of the connecting electrode has a curved surface.

8. The display device according to claim 1, wherein: include: A second insulating layer is disposed on the partition wall, the semiconductor light emitting device and the connecting electrode; as well as Electrode wiring, arranged on the second insulating layer; The connecting electrode connects the side of the semiconductor light emitting device to at least one of the first group of assembly lines and the second group of assembly lines; The electrode wiring is connected to an upper portion of the semiconductor light emitting device.

9. The display device according to claim 8, wherein: In the assembly hole, a third insulating layer is included between the connection electrode and the second insulating layer.

10. The display device according to claim 9, wherein: The connecting electrode includes a plurality of blocks; The material of the block is the same as that of the third insulating layer.

11. The display device according to claim 9, wherein: The connecting electrode comprises a plurality of strips; The material of the strip is the same as that of the third insulating layer.

12. The display device according to claim 11, wherein: A portion of the plurality of strips is connected to the third insulating layer.

13. The display device according to claim 9, wherein: The connecting electrode includes a plurality of pores, and the pores contain air.

14. The display device according to claim 1, wherein: The fixing member is disposed between the first group of assembly lines and the second group of assembly lines and between a bottom surface of the semiconductor light emitting device and a top surface of the insulating layer.

15. The display device according to claim 14, wherein: The fixing member is connected to the connecting electrode.

16. The display device according to claim 14, wherein: The connection electrode and the fixing member include a reflective layer.

17. The display device according to claim 1, wherein: The connection electrode is arranged in the assembly hole along the periphery of the semiconductor light emitting device.

18. The display device according to claim 1, wherein: The gap between the outer side surface of the semiconductor light emitting device and the inner side surface of the assembly hole is less than 1.5 micrometers.

Images