Driving substrate, light-emitting device and its fabrication method

Abstract

A driving substrate, a light-emitting device, and a method for fabricating the same are disclosed. The driving substrate includes a substrate, comprising a first surface, a second surface, and a plurality of side surfaces, at least one of which is a selected side surface; a flexible film disposed on the first surface, the selected side surface, and a portion of the second surface near the selected side surface; the flexible film includes a first region on the first surface, a second region on the second surface, and a bending region between the first and second regions, the bending region including a first corner region, a second corner region, and a side surface region; a wiring layer, an electrode layer, and a connection lead layer are sequentially disposed on the side of the flexible film away from the substrate; the wiring layer is located in the first region, the second region, and the side surface region; the electrode layer includes a plurality of first electrodes, a plurality of second electrodes, a plurality of third electrodes, and a plurality of fourth electrodes, each third electrode being electrically connected to a fourth electrode through the wiring layer; the connection lead layer includes a plurality of first connection leads and a plurality of second connection leads.

Description

Technical Field

[0001] This disclosure relates to the field of display technology, and in particular to a driving substrate, a light-emitting device, and a method for preparing the same. Background Technology

[0002] Mini LED (Mini Light-Emitting Diode) / Micro LED (Micro Light-Emitting Diode) display devices have advantages such as high brightness, clear display images, and low power consumption, and have good application prospects. They can be used in large-scale splicing display devices. In splicing display devices, the size of the splicing seam is an important factor affecting its display effect. Therefore, narrow-bezel display devices have become one of the development trends. Summary of the Invention

[0003] On one hand, a driving substrate is provided. The driving substrate includes a substrate, comprising a first surface, a second surface, and a plurality of side surfaces, at least one of which is a selected side surface; a flexible film disposed on the first surface, the selected side surface, and a portion of the second surface near the selected side surface; wherein the flexible film includes a first region located on the first surface, a second region located on the second surface, and a bending region located between the first and second regions, the bending region including a first corner region, a second corner region, and a side surface region connecting the first and second corner regions; a wiring layer, an electrode layer, and a connecting lead layer sequentially disposed on the side of the flexible film away from the substrate; wherein the wiring layer is located in the first region, the second region, and the side surface region; The electrode layer includes a plurality of first electrodes located in the first region, a plurality of second electrodes located in the second region, a plurality of third electrodes located in the side region and near the first corner region, and a plurality of fourth electrodes located in the side region and near the second corner region. Each third electrode is electrically connected to a fourth electrode through the wiring layer. The connection lead layer includes a plurality of first connection leads and a plurality of second connection leads. The plurality of first connection leads are located in the first corner region and extend to the first region and the side region at both ends. Each first connection lead connects to a first electrode and a third electrode. The plurality of second connection leads are located in the second corner region and extend to the second region and the side region at both ends. Each second connection lead connects to a second electrode and a fourth electrode.

[0004] In some embodiments, the driving substrate further includes at least one inorganic layer and / or at least one organic layer disposed on the side of the flexible film away from the substrate, wherein the inorganic layer is located in the first region, the second region and the side region, and the organic layer is located in the first region and the second region; the connecting lead layer is in contact with the flexible film.

[0005] In some embodiments, the thickness of the connecting lead layer is 2 μm to 5 μm.

[0006] In some embodiments, the widths of the plurality of first connecting leads are substantially equal, and the widths of the plurality of second connecting leads are substantially equal.

[0007] In some embodiments, the driving substrate includes an organic layer disposed on the side of the electrode layer away from the substrate.

[0008] In some embodiments, the driving substrate further includes the at least one inorganic layer, the at least one inorganic layer comprising: a buffer layer disposed between the flexible film and the wiring layer, the buffer layer being located in the first region, the side region, and the second region; a first insulating layer disposed between the wiring layer and the electrode layer, the first insulating layer being located in the first region, the side region, and the second region; a first electrode electrically connected to a portion of the wiring layer located in the first region via a first via penetrating the first insulating layer, a second electrode electrically connected to a portion of the wiring layer located in the second region via a second via penetrating the first insulating layer, a third electrode and a fourth electrode electrically connected to portions of the wiring layer located in the side region via third and fourth vias penetrating the first insulating layer, respectively; and a second insulating layer disposed on the side of the organic layer away from the substrate, the second insulating layer being located in the first region and the second region.

[0009] In some embodiments, the wiring layer includes a plurality of first wirings disposed in the first region, a plurality of second wirings disposed in the second region, and a plurality of third wirings disposed in the side region, each of the third wirings being electrically connected to one of the plurality of third electrodes and one of the plurality of fourth electrodes.

[0010] In some embodiments, the size of the first electrode along its extension direction ranges from 50 μm to 100 μm.

[0011] In some embodiments, the dimensions of the third electrode and the fourth electrode along their respective extension directions are both in the range of 30 μm to 50 μm.

[0012] In some embodiments, the distance between the boundary line of the first region and the first corner region and the selected side surface is 15 μm to 25 μm; and / or, the distance between the boundary line of the second region and the second corner region and the selected side surface is 15 μm to 25 μm.

[0013] In some embodiments, the driving substrate further includes a protective layer located in the bending region, a portion of the first region near the bending region, and a portion of the second region near the bending region, the protective layer covering the connection lead layer, the wiring layer, and the electrode layer.

[0014] On the other hand, a light-emitting device is provided, comprising a driving substrate as described in any one of the preceding aspects; a plurality of light-emitting devices located on a first surface, the plurality of light-emitting devices being electrically connected to the plurality of first electrodes; and a driving circuit board located on a second surface, the driving circuit board being electrically connected to the plurality of second electrodes.

[0015] In another aspect, a method for fabricating a light-emitting device is provided. The light-emitting device includes providing an initial substrate, the initial substrate including opposing initial first surfaces and initial second surfaces; the initial substrate including a retention area and a removal area; forming a flexible film on the initial first surface of the initial substrate; wherein the flexible film includes a first region, a second region, and a bending region located between the first region and the second region, the bending region including a first corner region, a second corner region, and a side surface region located between the first corner region and the second corner region; forming a wiring layer on the side of the flexible film away from the initial substrate, the wiring layer being located in the first region, the second region, and the side surface region; forming an electrode layer on the side of the wiring layer away from the initial substrate, the electrode layer including a plurality of first electrodes located in the first region, a plurality of second electrodes located in the second region, a plurality of third electrodes located in the side surface region and near the first corner region, and a plurality of fourth electrodes located in the side surface region and near the second corner region, each third electrode being electrically connected to a fourth electrode through the wiring layer.

[0016] The flexible film is peeled away from its bending region and second region to remove a portion of the initial substrate to be removed, forming a substrate. The substrate includes a first surface and a second surface opposite to each other, and a plurality of side surfaces connecting the first surface and the second surface, at least one of the plurality of side surfaces being a selected side surface. The flexible film is bent so that the portion of the flexible film located in the bending region and the second region is attached to the selected side surface and the second surface of the substrate. A connection lead layer is formed on the side of the flexible film away from the substrate. The connection lead layer includes a plurality of first connection leads and a plurality of second connection leads, each of the first connection leads and each of the second connection leads being located in the first corner region and the second corner region, respectively, and both ends of each of the first connection leads extending to the first region and the side region, and both ends of each of the second connection leads extending to the second region and the side region. Each of the first connection leads is electrically connected to one of the plurality of first electrodes and one of the plurality of third electrodes. Each of the second connection leads is electrically connected to one of the plurality of second electrodes and one of the plurality of fourth electrodes.

[0017] In some embodiments, the method for fabricating the light-emitting device further includes: after forming a flexible film on the first surface of the initial substrate, and before forming a wiring layer on the side of the flexible film away from the initial substrate, the method includes: forming a buffer layer on the side of the flexible film away from the initial substrate, the buffer layer being located in the first region, the side region, and the second region; after forming a wiring layer on the side of the flexible film away from the initial substrate, the method includes: forming a first insulating layer on the side of the wiring layer away from the flexible film, the first insulating layer being located in the first region, the side region, and the second region, the first insulating layer including a plurality of first vias, a plurality of second vias, a plurality of third vias, and a plurality of fourth vias; and forming an electrode layer on the side of the wiring layer away from the initial substrate, the method includes: forming an electrode layer on the side of the first insulating layer away from the initial substrate. A plurality of first electrodes, a plurality of second electrodes, a plurality of third electrodes, and a plurality of fourth electrodes are formed on one side of the initial substrate. The first electrodes are electrically connected to the portion of the wiring layer located in the first region through a through-hole. The second electrodes are electrically connected to the portion of the wiring layer located in the second region through a through-hole. The third electrodes and fourth electrodes are electrically connected to the portions of the wiring layer located in the side region through third and fourth through-holes, respectively, through the first insulating layer. After forming the electrode layer on the side of the wiring layer away from the initial substrate, the method further includes: forming an organic layer on the side of the electrode layer away from the initial substrate, the organic layer being located in the first region and the second region; and forming a second insulating layer on the side of the organic layer away from the initial substrate, the second insulating layer being located in the first region and the second region.

[0018] In some embodiments, forming a connection lead layer on the side of the flexible film away from the substrate includes: printing the plurality of first connection leads and the plurality of second connection leads respectively using a stereolithography process.

[0019] In some embodiments, the method for fabricating the light-emitting device further includes: after forming the connection lead layer, forming a protective layer on the connection lead layer, the wiring layer and the electrode layer. Attached Figure Description

[0020] To more clearly illustrate the technical solutions in this disclosure, the accompanying drawings used in some embodiments of this disclosure will be briefly described below. Obviously, the drawings described below are only drawings of some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams and are not intended to limit the actual size of the product, the actual flow of the method, the actual timing of the signals, etc. involved in the embodiments of this disclosure.

[0021] Figure 1 This is a planar structural diagram of a driving substrate according to some embodiments of the present disclosure;

[0022] Figure 2 According to Figure 1 A magnified view of the area at point M;

[0023] Figure 3 For the driving substrate provided according to some embodiments of this disclosure in a bent state along Figure 1 The cross-sectional structure diagram obtained by cutting the section line EE' shown;

[0024] Figure 4 For the driving substrate provided according to some embodiments of this disclosure in a non-bending state along the edge Figure 1 The cross-sectional structure diagram obtained by cutting the section line EE' shown;

[0025] Figure 5 For the driving substrate provided according to some embodiments of this disclosure in a non-bending state along the edge Figure 1 The cross-sectional structure diagram obtained by cutting along the section line CC' shown;

[0026] Figure 6 For the driving substrate provided according to some embodiments of this disclosure in a non-bending state along the edge Figure 1 The cross-sectional structure diagram obtained by cutting along the cutting line DD' shown;

[0027] Figure 7 For the driving substrate provided according to some embodiments of this disclosure in a bent state along Figure 1 Another cross-sectional structure diagram obtained by using the cutting line EE' as the cross section shown;

[0028] Figure 8 For the driving substrate provided according to some embodiments of this disclosure in a bent state along Figure 1 The cross-sectional structure diagram shown is based on the cutting line EE'.

[0029] Figure 9 This is a structural diagram of a light-emitting device provided according to some embodiments of the present disclosure;

[0030] Figure 10A This is a step diagram of step S1 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0031] Figure 10B This is a step diagram of step S2 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0032] Figure 10C This is a step diagram of step S3 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0033] Figure 10D This is a step diagram of S4 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0034] Figure 10E This is a step diagram of S5 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0035] Figure 10F This is a step diagram of S6 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0036] Figure 10G This is a step diagram of step S7 in the method for fabricating a light-emitting device according to some embodiments of the present disclosure;

[0037] Figure 10H This is a step diagram of S8 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0038] Figure 10I This is a step diagram of S9 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0039] Figure 10J This is a step diagram of S10 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0040] Figure 10K This is a step diagram of step S11 in the method for preparing a light-emitting device according to some embodiments of the present disclosure;

[0041] Figure 10L This is a step diagram of step S12 in the method for preparing a light-emitting device according to some embodiments of the present disclosure. Detailed Implementation

[0042] The technical solutions in some embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this disclosure, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments provided in this disclosure are within the scope of protection of this disclosure.

[0043] Unless the context otherwise requires, throughout the specification and claims, the term "comprise" and its other forms, such as the third-person singular "comprises" and the present participle "comprising," are interpreted as open-ended and encompassing, meaning "including, but not limited to." In the description of the specification, terms such as "one embodiment," "some embodiments," "exemplary embodiments," "example," "specific example," or "some examples," etc., are intended to indicate that a particular feature, structure, material, or characteristic associated with that embodiment or example is included in at least one embodiment or example of this disclosure. The illustrative representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics mentioned may be included in any suitable manner in any one or more embodiments or examples.

[0044] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of embodiments of this disclosure, unless otherwise stated, "a plurality of" means two or more.

[0045] In describing some embodiments, the terms "coupled" and "connected," and their derivative expressions, may be used. The term "connected" should be interpreted broadly; for example, a "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection via an intermediate medium. The term "coupled," for example, indicates that two or more components have direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that do not have direct contact with each other but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the content of this document.

[0046] "At least one of A, B and C" has the same meaning as "at least one of A, B or C", both including the following combinations of A, B and C: only A, only B, only C, combinations of A and B, combinations of A and C, combinations of B and C, and combinations of A, B and C.

[0047] "A and / or B" includes the following three combinations: A only, B only, and a combination of A and B.

[0048] The use of “applies to” or “configured to” in this article implies an open and inclusive language that does not preclude applicability to or configuration to devices that perform additional tasks or steps.

[0049] As used herein, “about,” “approximately,” or “approximately” includes the stated value and the average value within an acceptable range of deviation from the given value, wherein the acceptable range of deviation is determined by a person skilled in the art taking into account the measurement under discussion and the error associated with the measurement of the given quantity (i.e., the limitations of the measurement system).

[0050] As used herein, “parallel,” “perpendicular,” and “equal” include the described situation and situations that are similar to the described situation, within an acceptable range of deviation, which is determined by those skilled in the art taking into account the measurement under discussion and the error associated with the measurement of a particular quantity (i.e., the limitations of the measurement system). For example, “parallel” includes absolute parallelism and approximate parallelism, where an acceptable range of deviation for approximate parallelism may be, for example, within 5°; “perpendicular” includes absolute perpendicularity and approximate perpendicularity, where an acceptable range of deviation for approximate perpendicularity may also be, for example, within 5°; “equal” includes absolute equality and approximate equality, where an acceptable range of deviation for approximate equality may be, for example, a difference between the two equals being less than or equal to 5% of either one.

[0051] It should be understood that when a layer or element is referred to as being on another layer or substrate, it can mean that the layer or element is directly on the other layer or substrate, or that there is an intermediate layer between the layer or element and the other layer or substrate.

[0052] This document describes exemplary embodiments with reference to cross-sectional views and / or plan views, which are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are enlarged for clarity. Therefore, variations in shape relative to the drawings are contemplated due to, for example, manufacturing techniques and / or tolerances. Thus, exemplary embodiments should not be construed as being limited to the shapes of the regions shown herein, but rather include shape deviations due to, for example, manufacturing processes. For example, etched areas shown as rectangular would typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to show the actual shapes of the areas of the device, nor are they intended to limit the scope of the exemplary embodiments.

[0053] Currently, narrow bezels are a development trend in display panels. By placing the bonding terminals that need to be connected to the circuit board on the back of the display panel, the effective area of ​​the display area can be increased, thereby achieving a narrower bezel. The inventors have discovered that in some embodiments, the traces and bonding terminals of the display area of ​​the display panel are located on opposite sides of the display panel substrate, and the traces are electrically connected to the bonding terminals through side traces. However, the side trace method requires chamfering the edges of the substrate (made of silicon oxide or quartz, etc.) to reduce stress and prevent the side leads from breaking. Since the substrate material is relatively brittle, and the chamfering process is difficult, the chamfer size is difficult to control, and edge chipping is likely to occur. In other embodiments, a PI (polyimide) layer can be formed on the substrate. Front bonding terminals, back bonding terminals, and connecting leads connecting the front bonding terminals and the back bonding terminals are first formed on the surface of the same side of the PI layer. Then, the back bonding terminals are bent to the back side of the substrate by bending the PI layer. However, in order to ensure the flatness of the display panel, the PI needs to be as completely attached to the surface and edges of the substrate as possible during the bending process. That is, there is a 90-degree bending area in the PI layer, and this area mainly includes the connecting leads. Therefore, it will cause the local stress of the connecting leads to increase, resulting in breakage and reducing the reliability of the display panel.

[0054] Based on this, some embodiments of the present disclosure provide a driving substrate, a light-emitting device, and a method for manufacturing the same, so as to achieve thinner and narrower bezels in display products, and to ensure or even improve the reliability of display products.

[0055] The driving substrate, light-emitting device, and their fabrication method provided in this disclosure are described below.

[0056] Figure 1 A planar schematic diagram of a flexible film in a driving substrate in a non-bending state, according to an embodiment of the present invention, is provided. Figure 2 for Figure 1 A magnified view at point M, in Figure 1 There are three cutting lines CC', DD', and EE' in the diagram to clearly illustrate the position of each film layer in the driving substrate. Figures 3 to 10 Cross-sectional views of the driving substrate along the three cutting lines CC', DD' and EE' are given at different steps. The upper left corner of each figure clearly indicates which cutting line corresponds to which cross-sectional structure. Figure 3 To drive the substrate in a bent state, along Figure 1 The cross-sectional view obtained by the cutting line EE'. Figure 4 To drive the substrate along the curve before bending Figure 1 The cross-sectional view obtained by the cutting line EE' in the diagram.

[0057] Some embodiments of the present invention provide a driving substrate 100, such as Figure 3 As shown, the driving substrate 100 includes a substrate 1, a flexible film 2, a wiring layer 4, an electrode layer 8, and a connecting lead layer 9, which are stacked sequentially. It should be noted that the fabrication order of each film layer stacked on the substrate is consistent with the stacking order.

[0058] The substrate 1 includes a first surface 1a, a second surface 1b and a plurality of side surfaces 1c, at least one of the plurality of side surfaces 1c being a selected side surface 1cc.

[0059] For example, the substrate 1 has a supporting and protective function, and its material can be a rigid material, specifically any one of quartz, glass, silicon dioxide, silicon, plastic, and polymethyl methacrylate, without limitation herein.

[0060] A flexible membrane 2 is disposed on a first surface 1a, a selected side surface 1cc, and a portion of a second surface 1b near the selected side surface 1cc. The flexible membrane 2 includes a first region A1 located on the first surface 1a, a second region A2 located on the second surface 1b, and a bending region A3 located between the first region A1 and the second region A2. The bending region A3 includes a first corner region A31, a second corner region A32, and a side region A33 connecting the first corner region A31 and the second corner region A32. Exemplarily, the flexible membrane 2 is made of a flexible material with strong bending properties; for example, the material of the flexible membrane 2 is polyimide (PI).

[0061] It should be noted that the first region A1 is configured to house light-emitting devices, control circuits, and other devices, while the second region A2 is configured to house electrodes and connecting lines for bonding the driving circuit board. The driving circuit board includes at least one of a flexible circuit board, a printed circuit board, a programmable logic array circuit board, or an integrated circuit. The bending region A3 is located between the first region A1 and the second region A2, and the flexible film 2 is bendable in the bending region A3, thereby bending the second region A2 of the flexible film 2 to the second surface 1b of the substrate 1. The bending region A3 includes a first corner region A31, a second corner region A32, and a side region A33. The side region A33 is located on a selected side surface 1cc, the first corner region A31 is located at the connection point between the first surface 1a and the selected side surface 1cc, and the second corner region is located at the connection point between the second surface 1b and the selected side surface 1cc.

[0062] The wiring layer 4, electrode layer 8, and connecting lead layer 9 are disposed on the side of the flexible film 2 away from the substrate 1. The wiring layer 4 is located in the first region A1, the second region A2, and the side region A33; in some embodiments, such as... Figure 3 As shown, the wiring layer 4 includes multiple first wirings 41 disposed in the first area A1, multiple second wirings 42 disposed in the second area A2, and multiple third wirings 43 disposed in the side area A33.

[0063] Electrode layer 8 includes a plurality of first electrodes 81 located in first region A1, a plurality of second electrodes 82 located in second region A2, a plurality of third electrodes 83 located in side region A33 and near first corner region A31, and a plurality of fourth electrodes 84 located in side region A33 and near second corner region A32. Each third electrode 83 is electrically connected to a fourth electrode 84 through wiring layer 4. Each third wiring 43 is electrically connected to one of the plurality of third electrodes 83 and one of the plurality of fourth electrodes 84. (Refer to...) Figure 2 As shown, the corresponding third and fourth electrodes 84 are connected via the third trace 43. (Refer to...) Figure 3 As shown, each first electrode is electrically connected to a first trace 41, and each second electrode is electrically connected to a second trace 42.

[0064] The connecting lead layer 9 includes multiple first connecting leads 91 and multiple second connecting leads 92; the multiple first connecting leads 91 are located in the first corner area A31 and extend to the first area A1 and the side area A33 at both ends, and each first connecting lead 91 connects to a first electrode 81 and a third electrode 83; the multiple second connecting leads 92 are located in the second corner area A32 and extend to the second area A2 and the side area A33 at both ends, and each second connecting lead 92 connects to a second electrode 82 and a fourth electrode 84.

[0065] Based on the above connection relationship, it can be seen that, Figure 3 As shown, the first trace 41, the first electrode 81, the first connecting lead 91, the third electrode 83, the third trace 43, the fourth electrode 84, the second connecting lead 92, the second electrode 82 and the first trace 41 are connected in sequence to realize signal transmission between the front and back sides of the driving substrate.

[0066] For example, the materials of the wiring layer 4, electrode layer 8, and connecting lead layer 9 are all metals. For instance, the materials of the wiring layer 4, electrode layer 8, and connecting lead layer 9 can be at least one of copper, molybdenum, titanium, or aluminum. For example, the connecting lead layer 9 can have a titanium / aluminum / titanium stacked structure. The "electrical connection" between the components of the aforementioned layers refers to the presence of contact between them, where the metal materials are conductive, thereby achieving an electrical connection.

[0067] The flexible film 2 and the portions of each film layer stacked on the flexible film 2 located in the bending region A3 and the second region A2 can all be bent to selected side surface 1cc and second surface 1b of the substrate 1. Figure 3As shown, the portion of the flexible film 2 located in the bending region A3 is attached to the edge of the first surface 1a of the substrate 1 near the selected side surface 1cc, the entire selected side surface 1cc, and the partial edge of the second surface 1b. The portion of the flexible film 2 located in the second region A2 is attached to the second surface 1b of the substrate 1.

[0068] The fabrication process of the driving substrate 100 is briefly described below: After the flexible film 2, the wiring layer 4 and the electrode layer 8 are formed in sequence, the flexible film 2 is first bent so that the second region of the flexible film, the second wiring and the second electrode are located on one side of the second surface of the substrate, and the side region of the flexible film, the third electrode, the third wiring and the fourth electrode are located on one side of the selected side surface of the substrate. The first corner region A31 of the bent flexible film is in contact with the selected side surface 1cc and the first surface 1a of the substrate 1, and the second corner region A32 of the bent flexible film is in contact with the selected side surface 1cc and the second surface 1b of the substrate 1. Then, a connecting lead layer 9 is formed on the side of the electrode layer 8 away from the substrate 1, so that the connecting lead layer 9 is electrically connected to the electrode layer 8.

[0069] In the aforementioned driving substrate 100, since the flexible film 2 is bent first, and then the connecting lead layer 9 is formed on the side of the electrode layer 8 away from the substrate 1, that is, before the flexible film 2 is bent, no connecting leads are provided in the first corner area A31 and the second corner area A32, and the connecting lead layer 9 is formed after bending, this can avoid the problem of stress increase and breakage of the connecting leads on the surface of the flexible film 2 (especially in the areas that need to be bent: the first corner area A31 and the second corner area A32) during the bending process of the flexible film 2 in related technologies. This ensures the connection stability of multiple first connecting leads 91 and multiple second connecting leads 92 to the electrode layer 8, and enhances the reliability of the driving substrate 100.

[0070] In some embodiments, the connecting leads connecting the front and back sides of the substrate are fabricated using a printing process. This typically requires printing the portion of the connecting leads on the front side, the portion on the side of the substrate, and the portion on the back of the substrate in three separate steps. This process has low printing efficiency and requires high-precision scanning of all positions on the side, making it difficult to implement.

[0071] In the driving substrate 100 provided in the above embodiments of this disclosure, the portion of the wiring layer 4 located in the side region A33 is electrically connected to the third electrode 83 and the fourth electrode 84 of the electrode layer 8. That is, the third electrode 83 and the fourth electrode 84 are already connected through the third wiring 43. Therefore, in the process of preparing the connection lead layer 9, it is only necessary to form the first connection lead 91 and the second connection lead 92. The first connection lead 91 is used to realize the electrical connection between the first electrode 81 and the third electrode 83, and the second connection lead 92 is used to realize the electrical connection between the fourth electrode 84 and the second electrode 82. This enables signal transmission between the first electrode 81 and the second electrode 82. Therefore, it is not necessary to form a connection lead layer in the side region A33. The portion of the wiring layer 4 located in the side region A33 is equivalent to the connection lead between the third electrode 83 and the fourth electrode 84. This reduces the difficulty of preparing the connection lead layer, simplifies the process of forming the connection lead layer 9, and improves the efficiency of preparing the driving substrate. For example, when using a printing process to prepare the connecting lead layer, multiple first connecting leads 91 and multiple second connecting leads 92 are printed in two separate processes, saving a step of printing the connecting lead layer in the side area, improving preparation efficiency, and improving the printing pin collision problem in the high-precision connecting lead preparation process.

[0072] In some embodiments, such as Figure 3 As shown, the thickness T of the connecting lead layer 9 is 2μm to 5μm.

[0073] For example, the thickness T of the connecting lead layer 9 can be 2 μm, 2.5 μm, or 5 μm. Figure 3 As shown, the thickness of the connecting lead layer 9 is not uniform everywhere. The connecting lead layer 9 is prepared, for example, by forming the first connecting lead 91 and the first connecting lead 92 by stereolithography after the flexible film 2 is bent. The first connecting lead 91 extends to the first region A1 and the side region A33 at both ends, and the second connecting lead 92 extends to the second region A2 and the side region A33 at both ends. The portion of the first connecting lead 91 located in the first corner region A31 and the portion of the second connecting lead 92 located in the second corner region A32 have a larger thickness, for example, the thickness T is 5 μm.

[0074] In some embodiments, the widths of the plurality of first connecting leads 91 are substantially equal, and the widths of the plurality of second connecting leads 92 are substantially equal.

[0075] For example, during the fabrication of the connection lead layer 9, multiple first connection leads 91 can be fabricated first, followed by multiple second connection leads 92; alternatively, multiple second connection leads 92 can be fabricated first, followed by multiple first connection leads 91. The order in which the multiple first connection leads 91 and the multiple second connection leads 92 are fabricated is not limited. It should be noted that, during the fabrication process, the multiple first connection leads 91 or multiple second connection leads 92 are formed, for example, in a single stereolithography step. Therefore, the widths of the formed multiple first connection leads 91 and multiple second connection leads 92 are approximately equal, and the multiple first connection leads 91 and multiple second connection leads 92 are evenly distributed. Under the same size conditions, a greater number of first and second connection leads can be formed, improving the wiring accuracy. This allows for the adaptation of smaller devices on the first surface of the driving substrate, resulting in a higher resolution display panel. Furthermore, in the process of preparing the connecting lead layer 9, only two printing processes are required using the stereolithography process. Compared with the existing printing process, which prints the front, side and back of the substrate separately, this reduces the step of printing the side lead and improves printing efficiency.

[0076] In some embodiments, such as Figure 3 and Figure 4 As shown, the driving substrate 100 further includes at least one inorganic layer 11 and / or at least one organic layer 6 disposed on the side of the flexible film 2 away from the substrate 1. The inorganic layer 11 is located in the first region A1, the second region A2 and the side region A33, and the organic layer 6 is located in the first region A1 and the second region A2. The connecting lead layer 9 and the flexible film 2 are in partial contact.

[0077] like Figure 4 As shown, in the state before the driving substrate 100 is bent, the inorganic layer 11 and / or the organic layer 6 are disposed on the side of the flexible film 2 away from the substrate 1, and both are hollowed out at the positions of the first corner region A31 and the second corner region A32. That is to say, the surface of the flexible film 2 is exposed in the first corner region A31 and the second corner region A32. Therefore, when the connecting lead layer 9 is subsequently prepared, there is partial contact between the connecting lead layer 9 and the surface of the flexible film 2.

[0078] It should be noted that, Figure 4 The driving substrate is placed in a non-bent state only to more clearly illustrate the position of each film layer in the driving substrate, so that the same film layer is located on the same plane. In the final display device, it does not actually exist. Figure 4 In the structure shown, in some embodiments provided in this disclosure, the driving substrate has been bent before the connection lead layer 9 and the protective layer 10 are formed, i.e. Figure 3 The state shown.

[0079] The inorganic and organic layers in the driving substrate 100 serve as insulation or protection. Removing the inorganic and organic layers in the first corner region A31 and the second corner region A32 prevents stress concentration-induced fractures in these layers during flexible film bending, which could allow water and oxygen to enter through cracks and compromise insulation and protection. Furthermore, since only the flexible film exists in the first and second corner regions A31 and A32, and the film is relatively thin, it is easier to bend, allowing for minimal-angle bending. The flexible film can adhere as closely as possible to the surface and edges of the substrate to achieve a near 90-degree bend, thus ensuring the flatness of the film layer on the driving substrate. Additionally, after bending the flexible film, a connecting lead layer is fabricated. The connecting lead layer partially contacts the flexible film, while the other part overlaps the electrode layer, resulting in good adhesion and improved reliability.

[0080] In some embodiments, refer to Figure 3 and Figure 4 As shown, the driving substrate 100 includes an organic layer 6, which is disposed on the side of the electrode layer 8 away from the substrate 1.

[0081] For example, the material of the organic layer 6 is a resin material.

[0082] For example, in the first region A1 and the second region A2, the organic layer 6 is disposed on the side of the electrode layer 8 away from the substrate 1. Without the connection lead layer 9 being prepared, the organic layer 6 exposes the surfaces of the first electrode 81 electrically connected to the first connection lead 91 and the second electrode 82 electrically connected to the second connection lead 92 away from the substrate 1. When the connection lead layer 9 is subsequently prepared, the connection lead layer 9 can contact the surfaces of the first electrode 81 and the second electrode 82.

[0083] It should be noted that, referring to Figure 3 The distance L1 between the surface of the organic layer 6 furthest from the substrate and the substrate is greater than the distance L2 between the surface of the connecting lead layer furthest from the substrate and the substrate. The surface of the connecting lead layer 9 is not flush with the surface of the organic layer 6, and there is a thickness difference between the organic layer 6 and the connecting lead layer 9. In this way, after the connecting lead layer 9 is formed, it can prevent scratches on the circuit during subsequent processes and assembly, thereby improving the reliability of the drive substrate 100.

[0084] In some embodiments, refer to Figure 4 The driving substrate 100 also includes the at least one inorganic layer 11, which includes a buffer layer 3 disposed between the flexible film 2 and the wiring layer 4, and the buffer layer 3 is located in the first region A1, the side region A33 and the second region A2.

[0085] For example, the material of the buffer layer 3 is silicon nitride, silicon oxide, or silicon oxynitride, and the thickness of the buffer layer 3 is 0.2 μm to 0.6 μm, for example, 0.2 μm, 0.4 μm, or 0.6 μm. The buffer layer 3 is configured to prevent moisture from entering the interior of the drive substrate 100. (Refer to...) Figure 5 As shown, Figure 5 The buffer layer 3 shown has a uniform thickness at all locations, and its placement corresponds to that of the trace layer 4. Along the direction of the cross-section line CC', there is a gap between adjacent segments of the third trace 43, thus presenting the following appearance: Figure 5 The arrangement is shown in the diagram with intervals.

[0086] Continue to refer to Figure 4 The inorganic layer 11 also includes a first insulating layer 5 disposed between the wiring layer 4 and the electrode layer 8. The first insulating layer 5 is located in the first region A1, the side region A33, and the second region A2. The first electrode 81 is electrically connected to the portion of the wiring layer 4 located in the first region A1 (first wiring 41) through a first via penetrating the first insulating layer 5. The second electrode 82 is electrically connected to the portion of the wiring layer 4 located in the second region A2 (second wiring 42) through a second via 52 penetrating the first insulating layer 5. The third electrode 83 and the fourth electrode 84 are electrically connected to the portion of the wiring layer 4 located in the side region A33 (third wiring 43) through the third and fourth vias penetrating the first insulating layer 5, respectively.

[0087] For example, the material of the first insulating layer 5 is silicon nitride, silicon oxide, or silicon oxynitride. The first insulating layer 5 has the same pattern as the wiring layer 4 and covers the wiring layer 4, thereby protecting the wiring layer 4 from water and oxygen corrosion of the metal of the wiring layer 4.

[0088] The inorganic layer 11 further includes a second insulating layer 7 disposed on the side of the organic layer 6 away from the substrate 1. The second insulating layer 7 is located in the first region A1 and the second region A2. Exemplarily, the material of the second insulating layer 7 is silicon nitride, silicon oxide, or silicon oxynitride. The second insulating layer has the same pattern as the organic layer 6 and covers the organic layer 6, thereby protecting the organic layer 6 from water and oxygen corrosion.

[0089] Since the materials of buffer layer 3, first insulating layer 5, and second insulating layer 7 are all inorganic materials, their bending performance is poor and they are prone to breakage during bending. Therefore, the portions of the initially formed buffer layer 3, first insulating layer 5, and second insulating layer 7 located in the first corner region A31 and the second corner region A32 are completely removed, as per [reference]. Figure 6 As shown, the first corner region A31 and the second corner region A32 consist only of the flexible membrane 2, so that the flexible membrane 2 is easier to bend during subsequent bending processes and there will be no problems such as inorganic layer breakage.

[0090] In some embodiments, such as Figure 3 As shown, the wiring layer 4 includes multiple first wirings 41 disposed in the first area A1, multiple second wirings 42 disposed in the second area A2, and multiple third wirings 43 disposed in the side area A33. Each third wiring 43 is electrically connected to one of the multiple third electrodes 83 and one of the multiple fourth electrodes 84.

[0091] For example, the first insulating layer 5 includes a plurality of first vias, a plurality of second vias, a plurality of third vias and a plurality of fourth vias. The first electrode 81 is electrically connected to the first trace 41 of the trace layer 4 located in the first region A1 through the first vias penetrating the first insulating layer 5. The second electrode 82 is electrically connected to the second trace 42 of the trace layer 4 located in the second region A2 through the second vias penetrating the first insulating layer 5. The third electrode 83 and the fourth electrode 84 are electrically connected to the third trace 43 of the trace layer 4 located in the side region A33 through the third vias and the fourth vias penetrating the first insulating layer 5, respectively.

[0092] In some embodiments, such as Figure 7 As shown, the dimension D1 of the first electrode 81 along its extension direction ranges from 50 μm to 100 μm.

[0093] For example, refer to Figure 7 , Figure 7 The extension direction of the first electrode 81 is defined as the first direction X, and the dimension D1 of the first electrode 81 in the first direction X can be 50μm, 70μm, 90μm or 100μm.

[0094] In some embodiments, such as Figure 4 As shown, the dimensions D2 of the third electrode 83 and the fourth electrode 84 along their respective extension directions are both in the range of 30 μm to 50 μm.

[0095] For example, refer to Figure 7 , Figure 7 The extension direction of the third electrode 83 and the fourth electrode 84 is taken as the second direction Y, and the dimension D2 of the third electrode 83 and the fourth electrode 84 in the second direction Y can be 30μm, 40μm or 50μm.

[0096] In some examples, such as Figure 8 As shown, one end of the first connecting lead 91 contacts a portion of the upper surface of the first electrode 81, the other end of the first connecting lead contacts the entire upper surface of the third electrode 83, one end of the second connecting lead 92 contacts a portion of the upper surface of the second electrode 82, and the other end of the second connecting lead 92 contacts the entire upper surface of the fourth electrode 84, thereby ensuring full overlap between the connecting lead layer and the electrode layer, reducing contact resistance, and improving signal transmission performance.

[0097] like Figure 4 As shown, when the flexible membrane 2 is not bent, the dimension D5 of the first corner region A31 along the first direction X is 30μm to 50μm, and the dimension D6 of the second corner region A32 along the first direction X is 30μm to 50μm.

[0098] In some embodiments, such as Figure 7 As shown, the distance D3 between the boundary line Q1 of the first region A1 and the first corner region A31 and the selected side surface 1cc is 15μm to 25μm.

[0099] It is understandable that, since a portion of the first corner region A31 extends along the first direction X and another portion extends along the second direction Y, the distance D3 between the boundary line Q1 of the first region A1 and the first corner region A31 and the selected side surface 1cc is the size of the first corner region A31 in the first direction X. The distance D3 between the boundary line Q1 of the first region A1 and the first corner region A31 and the selected side surface 1cc can be 15μm, 20μm or 25μm.

[0100] In some embodiments, such as Figure 7 As shown, the distance D4 between the boundary line Q2 of the second region A2 and the second corner region A32 and the selected side surface 1cc is 15μm to 25μm.

[0101] Referring to the above description of D3, a portion of the second corner region A32 extends along the first direction X, and another portion extends along the second direction Y. Therefore, the distance D4 between the boundary line Q2 of the second region A2 and the second corner region A32 and the selected side surface 1cc is the dimension of the second corner region A32 in the first direction X. The distance D4 between the boundary line Q2 of the second region A2 and the second corner region A32 and the selected side surface 1cc can be 15μm, 20μm, or 25μm.

[0102] In some embodiments, such as Figure 7 As shown, the distance D3 between the boundary line Q1 of the first region A1 and the first corner region A31 and the selected side surface 1cc is 15μm to 25μm, and the distance D4 between the boundary line Q2 of the second region A2 and the second corner region A32 and the selected side surface 1cc is 15μm to 25μm.

[0103] For example, the specific description of the distance D3 between the boundary line Q1 of the first region A1 and the first corner region A31 and the selected side surface 1cc, and the distance D4 between the boundary line Q2 of the second region A2 and the second corner region A32 and the selected side surface 1cc, refer to the above description. Here, the dimensions of the first corner region A31 and the second corner region A32 are not limited in the second direction Y. For example, the dimensions of the first corner region A31 and the second corner region A32 in the second direction Y are both in the range of 15μm to 25μm, specifically 15μm, 20μm or 25μm.

[0104] The dimensions D3 to D6 mentioned above need to ensure that the first corner area of ​​the flexible film wraps around the boundary edge between the first surface of the substrate and the selected side surface, and that the second corner area of ​​the flexible film wraps around the boundary edge between the second surface of the substrate and the selected side surface. Furthermore, the dimensions D3 to D6 are also related to the cutting precision of the substrate. During the fabrication of the driving substrate, the flexible film is laid entirely on the initial substrate, which provides support to facilitate the fabrication of metal, organic, and inorganic layers on the flexible film. Before bending the flexible film, a portion of the initial substrate needs to be cut off, so that the bending area and the second area of ​​the flexible film are suspended. For example, the cutting precision of the substrate is ±15μm, and the dimensions D3 to D6 mentioned above are adapted to the cutting precision of ±15μm.

[0105] In some embodiments, such as Figure 8 As shown, the driving substrate 100 also includes a protective layer 10 located in the bending region A3, the portion of the first region A1 near the bending region A3, and the portion of the second region A2 near the bending region A3. The protective layer 10 covers the connecting lead layer 9, the wiring layer 4, and the electrode layer 8.

[0106] For example, the material of the protective layer 10 is an inorganic material, such as silicon nitride or silicon oxide. Figure 5 As shown, the protective layer 10 covers the connecting lead layer 9, the wiring layer 4 and the electrode layer 8, and has a certain insulating effect. It can protect multiple connecting leads 91 as well as the wiring layer 4 and the electrode layer 8, block water and oxygen, prevent the wiring layer 4 and the electrode layer 8 from water and oxygen corrosion, and extend their service life.

[0107] like Figure 9 As shown, some embodiments of this disclosure also provide a light-emitting device 1000, including the driving substrate 100 provided in any of the above embodiments. The light-emitting device 1000 includes the driving substrate 100, a plurality of light-emitting devices 20 and a driving circuit board 200.

[0108] Multiple light-emitting devices 20 are located on the first surface 1a and are electrically connected to multiple first electrodes 81. A driving circuit board 200 is located on the second surface 1b and is electrically connected to multiple second electrodes 82. Exemplarily, the driving circuit board 200 can be directly electrically connected to the multiple second electrodes 82 to be bonded to the driving substrate 100. Alternatively, as... Figure 9 As shown, the drive circuit board 200 is electrically connected to multiple second electrodes 82 via multiple bonding electrodes 85 and multiple second traces 42.

[0109] like Figure 1 As shown, the driving substrate 100 also includes a plurality of bonding electrodes 85 disposed on the side of the flexible film 2 away from the substrate 1. The plurality of bonding electrodes 85 are electrically connected to a plurality of second electrodes 82, and both the plurality of bonding electrodes 85 and the plurality of second electrodes 82 are located in the electrode layer 8. The total area occupied by the plurality of bonding electrodes 85 is smaller than that occupied by the plurality of second electrodes 82, and the size of each of the plurality of bonding electrodes 85 is smaller than the size of each of the plurality of second electrodes 82, and / or the spacing between two adjacent bonding electrodes 85 is smaller than the spacing between two adjacent second electrodes 82. Therefore, the display panel can be adapted and connected to the driving circuit board 200, which has a higher integration and smaller size, thereby further reducing the size of the display device. It is understood that the driving circuit board 200 has a gold finger structure, and each gold finger structure and its corresponding bonding electrode 85 or second electrode 82 are firmly electrically connected by a conductive adhesive or other material.

[0110] In some examples, for instance, the connection relationship between multiple light-emitting devices 20 and the wiring layer 4 is as follows: the portion of the wiring layer 4 located in the first region A1 includes a first wiring layer 4” and a second wiring layer 4’. The second wiring layer 4’ is electrically connected to the first wiring layer 4” through an opening penetrating the second insulating layer 7, the organic layer 6, and the first insulating layer 5. The light-emitting devices 20 are in direct contact with and electrically connected to the second wiring layer 4’. In other examples, the portion of the wiring layer 4 located in the first region A1 may also include only one layer structure.

[0111] In some embodiments, such as Figure 9As shown, the light-emitting device 1000 further includes a first adhesive layer 12B disposed on the side of the light-emitting device 20 away from the substrate 1, and a second adhesive layer 12A disposed between adjacent light-emitting devices 20. The first adhesive layer 12B can be black, gray, etc., and is used to protect the light-emitting device 20 while improving the display contrast of the light-emitting device 20 in scenes with strong ambient light. However, it is understood that the thickness of the first adhesive layer 12B should not be too large, ensuring that the light-emitting device 20 emits normal display brightness. The second adhesive layer 12A can be black, gray, green, or brown, and is used to prevent interference between the light emitted by the various light-emitting devices 20, thereby improving the display effect. In some embodiments, the first adhesive layer 12B and the second adhesive layer 12A can be made of the same material, and the first adhesive layer 12B and the second adhesive layer 12A can be disposed on the side of the light-emitting device 20 away from the substrate 1 by a rolling process.

[0112] like Figure 9 As shown, the first region A1 of the driving substrate 100 includes a display region AA and a peripheral region BB located on at least one side of the display region AA. For example, the peripheral region BB is at least close to the bending region A3. In some embodiments, the size L3 of the peripheral region BB can be less than 30 μm along the direction of the side surface 1c of the substrate 1. As can be seen from the foregoing, when the driving substrate 100 is in a bent state, the distance between the peripheral region BB and the outermost edge of the driving substrate 100 along the direction perpendicular to the side surface 1c of the substrate 1 is between 15 μm and 25 μm. It can be seen that the driving substrate 100 has a narrow bezel, which can meet the narrow bezel development requirements of display devices.

[0113] For example, the light-emitting device 1000 is a display device, such as a Mini LED (Mini Light Emitting Diode) display device or a Micro LED (Micro Light-Emitting Diode) display device.

[0114] In some examples, miniature LEDs or micro LEDs are used as light-emitting devices. Compared with traditional LEDs, they occupy a smaller volume and have smaller particles. Within the same screen size, the light source density per unit area is higher and the light source unit size is smaller. Therefore, more precise local control of the light-emitting device can be achieved, which can ensure the uniformity of display brightness and thus ensure the display quality of the display device.

[0115] The display device can be any device that displays images, whether moving (e.g., video) or stationary (e.g., still images), and whether it contains text or images. More specifically, the embodiments described are contemplated to be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal digital assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, camcorders, game consoles, watches, clocks, calculators, television monitors, flat panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigators, cockpit controllers and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0116] For example, the light-emitting device 1000 described above can also be used as a direct-lit backlight in a liquid crystal display device to provide light to the display panel on its light-emitting side.

[0117] The present disclosure does not impose any special restrictions on the specific form of the light-emitting device 1000. The light-emitting device 1000 adopts the driving substrate 100 provided in the above embodiments. Therefore, the light-emitting device 1000 provided in this disclosure has all the beneficial effects of the driving substrate 100 provided in any of the above embodiments, which will not be elaborated here.

[0118] Some embodiments of this disclosure also provide a method for fabricating a light-emitting device, the method comprising:

[0119] S1, such as Figure 10A As shown, an initial substrate 1' is provided, the initial substrate 1' including an initial first surface 1a' and an initial second surface 1b' opposite each other; the initial substrate 1' includes a retention area A4 and a removal area A5.

[0120] For example, the initial substrate 1' is a glass substrate or a silicon substrate.

[0121] S2, such as Figure 10B As shown, a flexible film 2 is formed on the initial first surface 1a' of the initial substrate 1'; wherein, the flexible film 2 includes a first region A1, a second region A2 and a bending region A3 located between the first region A1 and the second region A2, the bending region including a first corner region A31, a second corner region A32 and a side region A33 located between the first corner region A31 and the second corner region A32.

[0122] For example, the flexible film 2 is made of polyimide, and the material of the flexible film 2 is coated on the initial first surface 1a' of the initial substrate 1' using a coating process to form the flexible film 2.

[0123] S3, such as Figure 10C As shown, a buffer layer 3 is formed on the side of the flexible film 2 away from the initial substrate 1'. The buffer layer 3 is located in the first region A1, the second region A2 and the side region A33.

[0124] For example, the material of the buffer layer 3 can be silicon nitride, silicon oxide, or silicon oxynitride. The above steps can be, for example, as follows: S31, forming an initial buffer layer on the side of the flexible film 2 away from the initial substrate 1', for example, by depositing the material of the buffer layer 3 using a deposition process, wherein the initial buffer layer is located in the first region A1, the second region A2, and the bending region A3. S32, removing the portions of the initial buffer layer located in the first corner region A31 and the second corner region A32 to form the buffer layer 3. For example, by using an etching process to remove the portions of the initial buffer layer located in the first corner region A31 and the second corner region A32.

[0125] S4, such as Figure 10D As shown, a wiring layer 4 is formed on the side of the buffer layer 3 away from the initial substrate 1'. The wiring layer 4 is located in the first region A1, the second region A2 and the side region A33.

[0126] For example, the material of the wiring layer 4 can be at least one of copper, molybdenum, titanium or aluminum. The material of the wiring layer 4 is deposited in the first region A1, the second region A2 and the side region A33, and a set pattern is formed by a patterning process. The wiring layer 4 includes a plurality of first wirings 41 disposed in the first region A1, a plurality of second wirings 42 disposed in the second region A2, and a plurality of third wirings 43 disposed in the side region A33.

[0127] It should be noted that the patterning process in the embodiments of this disclosure includes thin film deposition, photoresist coating, exposure using a mask, development, etching, and photoresist removal processes.

[0128] S5, such as Figure 10E As shown, a first insulating layer 5 is formed on the side of the wiring layer 4 away from the flexible film 2. The first insulating layer 5 is located in the first region A1, the side region A33, and the second region A2. The first insulating layer 5 includes a plurality of first vias, a plurality of second vias, a plurality of third vias, and a plurality of fourth vias.

[0129] For example, the material of the first insulating layer 5 can be silicon nitride, silicon oxide, or silicon oxynitride. For example, the material of the first insulating layer 5 is deposited in the first region A1, the side region A33, and the second region A2 using a deposition process, and a plurality of first vias, a plurality of second vias, a plurality of third vias, and a plurality of fourth vias are formed in the first insulating layer 5 by an etching process. Each first via exposes the surface of a first trace 41, each second via exposes the surface of a second trace 42, and each third via and each fourth via exposes the surface of a third trace 43.

[0130] S6, such as Figure 10F As shown, an electrode layer 8 is formed on the side of the first insulating layer 5 away from the initial substrate 1'. The electrode layer 8 includes a plurality of first electrodes 81 located in the first region A1, a plurality of second electrodes 82 located in the second region A2, a plurality of third electrodes 83 located in the side region A33 and close to the first corner region A31, and a plurality of fourth electrodes 83 located in the side region A33 and close to the second corner region A32. Each third electrode 83 is electrically connected to a fourth electrode 84 through a wiring layer 4.

[0131] For example, the material of the electrode layer 8 can be at least one of copper, molybdenum, titanium or aluminum. The material of the electrode layer 8 is sputtered onto the surface of the first insulating layer 5 using a sputtering process, and a plurality of first electrodes 81, a plurality of second electrodes 82, a plurality of third electrodes 83 and a plurality of fourth electrodes are formed using a patterning process. The first electrode 81 is electrically connected to the portion of the wiring layer 4 located in the first region A1 (first wiring 41) through a first via penetrating the first insulating layer 5. The second electrode 82 is electrically connected to the portion of the wiring layer 4 located in the second region A2 (second wiring 42) through a second via penetrating the first insulating layer 5. The third electrode 83 and the fourth electrode 84 are electrically connected to the portion of the wiring layer 4 located in the side region A33 (third wiring 43) through the third via and the fourth via penetrating the first insulating layer 5, respectively.

[0132] S7, such as Figure 10G As shown, an organic layer 6 is formed on the side of the electrode layer 8 away from the initial substrate 1', and the organic layer 6 is located in the first region A1 and the second region A2.

[0133] For example, the organic layer 6 is made of resin material and is formed on the side of the electrode layer 8 away from the initial substrate 1' using a coating process.

[0134] In some embodiments, the first region A1 of the driving substrate 100 includes a display region AA and a peripheral region BB, and an organic layer 6 is disposed in the display region AA.

[0135] S8, such as Figure 10HAs shown, a second insulating layer 7 is formed on the side of the organic layer 6 away from the initial substrate 1', and the second insulating layer 7 is located in the first region A1 and the second region A2.

[0136] For example, the material of the second insulating layer 7 can be silicon nitride, silicon oxide, or silicon oxynitride. For example, the material of the first insulating layer 5 can be deposited in the first region A1 and the second region A2 using a deposition process to form the second insulating layer 7.

[0137] S9, such as Figure 10I As shown, the bending area A3 and the second area A2 of the flexible film 2 are peeled off, and part of the area A5 to be removed from the initial substrate 1' is removed to form the substrate 1; the substrate 1 includes a first surface 1a and a second surface 1b opposite to each other, and a plurality of side surfaces 1c connecting the first surface 1a and the second surface 1b, at least one side of the plurality of side surfaces 1c being a selected side surface 1cc.

[0138] For example, a portion of the region A5 to be removed from the initial substrate 1' is removed, and a portion of the retained region A4 serves as the substrate 1. For example, the boundary line between the retained region A4 and the region A5 to be cut is located in the bending region A3 near the first region A1. Thus, in subsequent steps, after the flexible film 2 is bent, the portion of the flexible film 2 located in the bending region A3 and the second region A2 is attached to the selected side surface 1cc and the second surface 1b of the substrate 1.

[0139] In some examples, S9 includes:

[0140] S91. At least a portion of the area to be removed from the corresponding initial substrate 1' of the flexible film 2 is peeled off.

[0141] S92. Using a cutting process, a portion of the area to be removed from the initial substrate 1' is removed.

[0142] like Figure 10I As shown, the boundary line between the peeled and unpeeled areas of the flexible film 2 is closer to the display area AA than the boundary line between the retained area A4 and the area to be cut A5 of the initial substrate 1'. Exemplarily, there is a first distance d1 between the boundary line between the peeled and unpeeled areas of the flexible film 2 and the display area AA, and a second distance d2 between the boundary line between the retained area A4 and the area to be cut A5 of the initial substrate 1' and the boundary line between the peeled and unpeeled areas of the flexible film 2. The values ​​of the first distance d1 and the second distance d2 depend on the precision of the peeling and cutting processes. For example, both the first distance d1 and the second distance d2 are 30 μm, which ensures the smooth peeling of the flexible film 2 and the cutting of the initial substrate 1'.

[0143] S10, such as Figure 10JAs shown, the flexible film 2 is bent so that the portion of the flexible film 2 located in the bending region A3 and the second region A2 is attached to the selected side surface 1cc and the second surface 1b of the substrate 1.

[0144] Specifically, with the two edges of the substrate 1 as the center, the flexible film 2 is bent twice at 90°, so that the portions of the flexible film 2 located in the bending region A3 and the second region A2 are attached to the selected side surface 1cc and the second surface 1b of the substrate 1. The layers of film stacked on the flexible film 2 also change accordingly with the bending position of the flexible film 2.

[0145] At this time, the portion of the driving substrate 100 located in the bending region A3 only includes the flexible film 2 with high bending performance, and does not form an electrical connection between the first region A1 and the second region A2. This ensures the bending effect during the bending process and prevents film breakage or cracking. The first electrode 81 and the second electrode 82 are located on the first surface 1a and the second surface 1b of the substrate 1, respectively.

[0146] S11, such as Figure 10K As shown, a connection lead layer 9 is formed on the side of the flexible film 2 away from the substrate 1. The connection lead layer 9 includes multiple first connection leads 91 and multiple second connection leads 92. Each first connection lead 91 and each second connection lead 92 is located in a first corner region A31 and a second corner region A32, respectively. The two ends of each first connection lead 91 extend to a first region A1 and a side region A33, and the two ends of each second connection lead 92 extend to a second region A2 and a side region A33. Each first connection lead 91 is electrically connected to one of the multiple first electrodes 81 and one of the multiple third electrodes 83. Each second connection lead 92 is electrically connected to one of the multiple second electrodes 82 and one of the multiple fourth electrodes 84.

[0147] For example, the connection lead layer 9 can be formed by using a stereolithography process to print multiple first connection leads 91 and multiple second connection leads 92. The connection lead layer 9 can be formed by using only two printing processes to achieve the transmission of electrical signals between the first area A1 and the second area A2. Compared with the existing printing connection lead method, it can reduce one printing process and improve printing efficiency.

[0148] S12, such as Figure 10L As shown, a protective layer 10 is formed, which covers the connecting lead layer 9, the wiring layer 4 and the electrode layer 8.

[0149] like Figure 10LAs shown, the protective layer 10 is disposed on the side of the connecting lead layer 9 away from the substrate 1. The protective layer 10 covers multiple first connecting leads 91 and multiple second connecting leads 92, which can play a certain protective role for the multiple first connecting leads 91 and multiple second connecting leads 92, block water and oxygen, prevent the multiple first connecting leads 91 and multiple second connecting leads 92 from being corroded by water and oxygen, and extend their service life.

[0150] It should be noted that the multiple first connecting leads 91 at least partially overlap with the first electrode 81 and the third electrode 83 of the electrode layer 8. In other words, the multiple first connecting leads 91 are sufficient to ensure conductivity between the first electrode 81 and the third electrode 83. (Continue referring to...) Figure 10L Multiple first connecting leads 91 partially overlap with the first electrode 81 and the third electrode 83 of the electrode layer 8. That is, before the formation of the protective layer 10, the surfaces of the first electrode 81 and the third electrode 83 on the side away from the substrate 1 are exposed. Similarly, the surfaces of the second electrode 82 and the fourth electrode 84 on the side away from the substrate 1 are also exposed. Therefore, by providing the protective layer 10 to cover the electrode layer 8, the first electrode 81, the second electrode 82, the third electrode 83 and the fourth electrode 84 can be protected to a certain extent, avoiding water and oxygen corrosion and extending their service life.

[0151] Continue to refer to Figure 10L The wiring layer 4 includes a first wiring 41 located in the first region A1, a second wiring 42 located in the second region A2, and a third wiring 43 located in the side region A33. Before the protective layer 10 is formed, the third wiring 43 of the wiring layer 4 is used to realize the electrical signal transmission between the third electrode 83 and the third electrode 84. Similarly, the third wiring 43 is exposed. Therefore, after the protective layer 10 is set, it can be covered to avoid water and oxygen corrosion, extend its service life, and thus improve the overall performance of the drive substrate 100.

[0152] For example, a protective layer material can be applied using printing, pad printing, deposition, or other processes to form a protective layer 10 on the side of the connecting lead layer 9, wiring layer 4, and electrode layer 8 away from the substrate 1.

[0153] In some embodiments, refer to Figure 9 The method for preparing the light-emitting device also includes:

[0154] S13. Multiple light-emitting devices 20 are disposed in the first region A1 of the driving substrate.

[0155] For example, the light-emitting device 20 is electrically connected to a portion (multiple first traces 41) of the wiring layer 4 located in the first region A1. For example, as Figure 9As shown, the portion of the wiring layer 4 located in the first region A1 includes a first wiring layer 4” and a second wiring layer 4’. The second wiring layer 4’ is electrically connected to the first wiring layer 4” through an opening that penetrates the second insulating layer 7, the organic layer 6, and the first insulating layer 5. The light-emitting device 20 is in direct contact with and electrically connected to the second wiring layer 4’.

[0156] S14. A first adhesive layer 12B is formed on the side of the light-emitting device 20 away from the substrate 1, and a second adhesive layer 12A is formed on the sidewall of the light-emitting device 20.

[0157] For example, a coating process is used to coat a second adhesive layer 12A between two adjacent light-emitting devices 20, and a first adhesive layer 12B is coated on the side of the light-emitting device 20 away from the substrate 1.

[0158] S15, in the second zone A2, the driver circuit board 200 is bonded.

[0159] For example, the drive circuit board 200 is electrically connected to a plurality of bonding electrodes 85, and then the portion of the trace layer 4 (first trace layer 4”) located in the second area A2 (a plurality of second traces 42) is electrically connected to a plurality of second electrodes 82 to achieve bonding of the drive circuit board 200.

[0160] It should be noted that S13, S14 and S15 above do not necessarily represent a successor relationship with steps S1 to S12. The following provides the overall preparation process of two examples of light-emitting devices.

[0161] In some embodiments, the entire fabrication process of the light-emitting device is as follows: after S8 and before S9, steps S13 and S14 are performed, followed by steps S9 to S12, and finally S15 is completed. That is, after forming a flexible film 2, a buffer layer 3, a wiring layer 4, a first insulating layer 5, an organic layer 6, and a second insulating layer 7 on the initial substrate 1', multiple light-emitting devices 20 are transferred to the side of the second insulating layer 7 away from the initial substrate 1', and the light-emitting devices 20 are electrically connected to the portion of the wiring layer 4 located in the first region A1, and a first adhesive layer 12B and a second adhesive layer 12A are formed. All of the above steps are performed in the non-bent state of the driving substrate. Next, the initial substrate 1' is cut to obtain the substrate 1, the flexible film 2 is bent to form a connecting lead layer 9 and a protective layer 10, and finally the bonding of the driving circuit board 200 is completed.

[0162] In other embodiments, the entire fabrication process of the light-emitting device is as follows: S1 to S15, that is, after forming a flexible film 2, a buffer layer 3, a wiring layer 4, a first insulating layer 5, an organic layer 6 and a second insulating layer 7 on the initial substrate 1', the initial substrate 1' is cut to obtain the substrate 1, the flexible film 2 is bent so that the driving substrate is in a bent state, a connecting lead layer 9 and a protective layer 10 are formed, multiple light-emitting devices 20 are transferred to the side of the second insulating layer 7 away from the initial substrate 1', the light-emitting devices 20 are electrically connected to the portion of the wiring layer 4 located in the first region A1, and a first adhesive layer 12B and a second adhesive layer 12A are formed, and finally the bonding of the driving circuit board 200 is completed.

[0163] In the method for fabricating the light-emitting device provided in this disclosure, the flexible film 2 is first bent, and then a connecting lead layer 9 is formed on the side of the electrode layer 8 away from the substrate 1. That is, no metal traces are set in the first corner region A31 and the second corner region A32 before the flexible film 2 is bent, and the connecting lead layer 9 is formed after bending. This avoids the problem of stress increase and breakage of the connecting leads on the surface of the flexible film 2 during the bending process of the flexible film 2 in related technologies. Without increasing the process difficulty, the connection stability of multiple connecting leads is guaranteed. In addition, before bending, a third electrode 83 and a fourth electrode 84 are set in the electrode layer 8, and a third trace 43 is set in the side region A33 to electrically connect the third electrode 83 and the fourth electrode 84. In the subsequent fabrication of the connecting lead layer 9, the process can be further simplified, the stability of signal transmission can be guaranteed, and the reliability of the driving substrate 100 can be enhanced.

[0164] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A driving substrate, comprising: a substrate, comprising a first surface, a second surface, and a plurality of side surfaces, at least one of the plurality of side surfaces being a selected side surface; a flexible film disposed on the first surface, the selected side surface, and a portion of the second surface proximate to the selected side surface, wherein the flexible film comprises a first region on the first surface, a second region on the second surface, and a bending region between the first region and the second region, the bending region comprising a first corner region, a second corner region, and a side region connecting the first corner region and the second corner region; a trace layer, an electrode layer, and a connecting lead layer disposed in sequence on a side of the flexible film distal to the substrate; wherein the trace layer is located on the first region, the second region, and the side region, the electrode layer comprises a plurality of first electrodes on the first region, a plurality of second electrodes on the second region, a plurality of third electrodes on the side region proximate to the first corner region, and a plurality of fourth electrodes on the side region proximate to the second corner region, each third electrode being electrically connected to one fourth electrode through the trace layer; the connecting lead layer comprises a plurality of first connecting leads and a plurality of second connecting leads, the plurality of first connecting leads are located on the first corner region and extend to the first region and the side region at both ends, each first connecting lead connects one first electrode and one third electrode, the plurality of second connecting leads are located on the second corner region and extend to the second region and the side region at both ends, each second connecting lead connects one second electrode and one fourth electrode.

2. The drive substrate according to claim 1, wherein the driving substrate further comprises at least one inorganic layer and / or at least one organic layer disposed on a side of the flexible film distal to the substrate, the inorganic layer is located on the first region, the second region, and the side region, and the organic layer is located on the first region and the second region; the connecting lead layer is in contact with the flexible film.

3. The drive substrate according to claim 1, wherein the thickness of the connecting lead layer is 2 μm ~ 5 μm.

4. The drive substrate according to claim 1, wherein the plurality of first connecting leads have substantially equal widths, and the plurality of second connecting leads have substantially equal widths.

5. The drive substrate according to any one of claims 2 to 4, wherein the driving substrate comprises an organic layer disposed on a side of the electrode layer distal to the substrate.

6. The drive substrate according to claim 5, wherein the driving substrate further comprises the at least one inorganic layer, the at least one inorganic layer comprises: a buffer layer disposed between the flexible film and the trace layer, the buffer layer is located on the first region, the side region, and the second region; a first insulating layer disposed between the trace layer and the electrode layer, the first insulating layer is located on the first region, the side region, and the second region, the first electrodes are electrically connected to the portion of the trace layer on the first region through first vias penetrating the first insulating layer, the second electrodes are electrically connected to the portion of the trace layer on the second region through second vias penetrating the first insulating layer, and the third electrodes and the fourth electrodes are electrically connected to the portion of the trace layer on the side region through third vias and fourth vias penetrating the first insulating layer, respectively; a second insulating layer disposed on a side of the organic layer distal to the substrate, the second insulating layer being located in the first region and the second region.

7. The drive substrate according to claim 1, wherein The wiring layer includes a plurality of first wires disposed in the first region, a plurality of second wires disposed in the second region, and a plurality of third wires disposed in the side region, each of the third wires being electrically connected to one of the third electrodes and one of the fourth electrodes.

8. The drive substrate according to claim 1, wherein The first electrode has a dimension in the direction of its extension ranging from 50 μm to 100 μm.

9. The drive substrate according to claim 1, wherein The third electrodes and the fourth electrodes each have a dimension in the direction of their respective extensions ranging from 30 μm to 50 μm.

10. The drive substrate according to claim 1, wherein The distance between the junction line of the first region and the first corner region and the selected side surface ranges from 15 μm to 25 μm. The distance between the junction line of the second region and the second corner region and the selected side surface ranges from 15 μm to 25 μm.

11. The drive substrate according to claim 1, wherein A protective layer is further included, located on the bending region, the portion of the first region proximal to the bending region, and the portion of the second region proximal to the bending region, the protective layer covering the connecting lead layer, the wiring layer, and the electrode layer.

12. A light emitting device, comprising: the driving substrate according to any one of claims 1-11; a plurality of light emitting devices located on the first surface, the plurality of light emitting devices being electrically connected to the plurality of first electrodes; a driving circuit board located on the second surface, the driving circuit board being electrically connected to the plurality of second electrodes.

13. A method for manufacturing a light emitting device, comprising: providing an initial substrate, the initial substrate including opposite initial first and second surfaces; the initial substrate including a reserved region and a region to be removed; forming a flexible film on the initial first surface of the initial substrate, wherein the flexible film includes a first region, a second region, and a bending region located between the first region and the second region, the bending region including a first corner region, a second corner region, and a side region located between the first corner region and the second corner region; forming a wiring layer on a side of the flexible film distal to the initial substrate, the wiring layer being located in the first region, the second region, and the side region; forming an electrode layer on a side of the wiring layer distal to the initial substrate, the electrode layer including a plurality of first electrodes located in the first region, a plurality of second electrodes located in the second region, a plurality of third electrodes located in the side region proximal to the first corner region, and a plurality of fourth electrodes located in the side region proximal to the second corner region, each of the third electrodes being electrically connected to one of the fourth electrodes through the wiring layer; peeling off the bending region and the second region of the flexible film, removing a portion of the initial substrate in the region to be removed, and forming a substrate, the substrate including opposite first and second surfaces, and a plurality of side surfaces connecting the first and second surfaces, at least one of the plurality of side surfaces being a selected side surface; bending the flexible film so that the part of the flexible film located at the bending region and the second region is attached to the selected side surface and the second surface of the substrate base plate; forming a connecting lead layer on the side of the flexible film away from the substrate base plate; the connecting lead layer comprises a plurality of first connecting leads and a plurality of second connecting leads, each of the first connecting leads and each of the second connecting leads is located at the first corner region and the second corner region respectively, and both ends of each of the first connecting leads extend to the first region and the side region, both ends of each of the second connecting leads extend to the second region and the side region; each of the first connecting leads is electrically connected with one of the plurality of first electrodes and one of the plurality of third electrodes; each of the second connecting leads is electrically connected with one of the plurality of second electrodes and one of the plurality of fourth electrodes.

14. The method of producing a light emitting device according to Claim 13, wherein The preparation method of the light-emitting device further comprises: After forming the flexible film on the first surface of the initial substrate base plate, before forming the wiring layer on the side of the flexible film away from the initial substrate base plate, it comprises: forming a buffer layer on the side of the flexible film away from the initial substrate base plate, the buffer layer is located at the first region, the side region and the second region; After forming the wiring layer on the side of the flexible film away from the initial substrate base plate, it comprises: forming a first insulating layer on the side of the wiring layer away from the flexible film, the first insulating layer is located at the first region, the side region and the second region, and the first insulating layer comprises a plurality of first vias, a plurality of second vias, a plurality of third vias and a plurality of fourth vias; The forming of the electrode layer on the side of the wiring layer away from the initial substrate base plate comprises: forming a plurality of first electrodes, a plurality of second electrodes, a plurality of third electrodes and a plurality of fourth electrodes on the side of the first insulating layer away from the initial substrate base plate, so that the first electrodes are electrically connected with the part of the wiring layer located at the first region through the first vias, the second electrodes are electrically connected with the part of the wiring layer located at the second region through the second vias, and the third electrodes and the fourth electrodes are electrically connected with the part of the wiring layer located at the side region through the third vias and the fourth vias of the first insulating layer respectively; After forming the electrode layer on the side of the wiring layer away from the initial substrate base plate, it further comprises: forming an organic layer on the side of the electrode layer away from the initial substrate base plate, the organic layer is located at the first region and the second region; forming a second insulating layer on the side of the organic layer away from the initial substrate base plate, the second insulating layer is located at the first region and the second region.

15. The method of producing a light emitting device according to Claim 13, wherein The forming of the connecting lead layer on the side of the flexible film away from the substrate base plate comprises: printing the plurality of first connecting leads and the plurality of second connecting leads respectively by using a stereoscopic printing process.

16. The method according to any one of claims 13 to 15, wherein It further comprises: forming a protective layer on the connecting lead layer, the wiring layer and the electrode layer after forming the connecting lead layer.

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