Low-dielectric resin composition based on organic silicon cross-linking agent and application of low-dielectric resin composition

Abstract

The invention discloses a low-dielectric resin composition based on an organosilicon cross-linking agent and application thereof, the low-dielectric resin composition comprises thermosetting resin, the organosilicon cross-linking agent and an initiator, the mass percentage of the organosilicon cross-linking agent in the low-dielectric resin composition based on the organosilicon cross-linking agent is less than 50%, and the mass percentage of the initiator in the low-dielectric resin composition based on the organosilicon cross-linking agent is less than 50%. The organic silicon cross-linking agent comprises at least two unsaturated double bonds, so that the organic silicon cross-linking agent and the thermosetting resin are ensured to be cross-linked through free radical polymerization. The organic silicon crosslinking agent is polymerized and crosslinked with the thermosetting resin free radicals, so that the water absorption of the material is reduced, the ultralow dielectric loss of the material is realized under the condition of ensuring enough high glass-transition temperature, and the thermo-oxidative aging resistance of the resin material is remarkably enhanced by utilizing the more stable structure of the organic silicon crosslinking agent. The finally obtained low-dielectric resin composition based on the organic silicon cross-linking agent is suitable for the field of high-frequency and high-speed materials, and can meet the requirements of high-speed information transmission on related materials of printed circuit boards.

Description

Technical Field

[0001] The present invention relates to the technical field of resin materials, and in particular to a low dielectric resin composition based on an organosilicon crosslinking agent and application thereof. Background Art

[0002] With the development of high-end communications, smart mobile terminals and high-performance cloud computing technologies, the problem of signal transmission loss has attracted increasing attention. Therefore, electronic and electrical materials, especially printed circuit board related materials, have higher requirements in terms of low dielectric properties, environmental reliability and resistance to thermal oxidation aging. In this case, ultra-low loss thermosetting materials cured by free radical polymerization have been widely used in high-frequency, high-speed circuit boards and electronic packaging substrates due to their excellent performance.

[0003] In the prior art, low-loss thermosetting materials are usually prepared based on free radical-initiated resin systems containing rich double bonds, such as hydrocarbon resins, acrylate-terminated polyphenylene ether (PPO), modified maleimide resins and / or cross-linkers containing rich C=C double bonds. However, in the prior art, when synthesizing thermosetting materials, there is a lack of cross-linking agents that can ensure that the resin materials have both low dielectric properties and high resistance to thermal oxidation aging. At present, the most widely used cross-linking agents are triallyl isocyanurate (TAIC) and hydrocarbon resin oligomers such as 1,2-polybutadiene (1,2-PBD). However, there are various problems with the resin compositions obtained based on the above two cross-linking agents. Taking polyphenylene ether (PPO) as an example, the dielectric loss of the resin composition composed of it and TAIC is relatively high, and the resistance to thermal oxidation aging of the resin composition composed of 1,2-PBD is poor, which cannot meet the needs of high-performance packaging substrates and printed circuit boards.

[0004] Therefore, the resin materials in the prior art still need to be further improved. Summary of the invention

[0005] In view of the defects in the prior art, the present invention proposes a low dielectric resin composition based on a silicone crosslinker and its application, which achieves ultra-low dielectric loss of the material under the premise of ensuring that the glass transition temperature is sufficiently high or even unchanged, thereby ensuring the low dielectric constant of the material while taking into account the material's resistance to thermal oxidative aging, solving the problem in the prior art that it is difficult for resin materials to have both low dielectric properties and high resistance to thermal oxidative aging.

[0006] The technical solution of the present invention is as follows:

[0007] The present invention provides a low dielectric resin composition based on an organosilicon crosslinker, wherein the low dielectric resin composition based on an organosilicon crosslinker comprises a thermosetting resin and an organosilicon crosslinker.

[0008] The mass percentage of the organosilicon crosslinker in the low dielectric resin composition based on the organosilicon crosslinker is less than 50%, and the organosilicon crosslinker contains at least two unsaturated double bonds to ensure that the organosilicon crosslinker and the thermosetting resin are crosslinked through free radical polymerization.

[0009] In one embodiment, the structure of the organosilicon crosslinking agent is n≥1, n is a positive integer,

[0010] Among them, R is

[0011] R1-R3 are each independently selected from The group is composed to ensure that each silicone crosslinking agent molecule includes at least two unsaturated double bonds.

[0012] In one embodiment, in the structure of the organosilicon crosslinking agent, 1≤n≤20, and n is a positive integer.

[0013] In one embodiment, in the structure of the organosilicon crosslinking agent, 1≤n≤4, and n is a positive integer.

[0014] In one embodiment, the molecular weight of the organosilicon crosslinking agent is 200-3000.

[0015] In one embodiment, the thermosetting resin is a prepolymer that can be cured by a free radical polymerization mechanism, including modified polyphenylene ether, modified maleimide resin, divinylbenzene copolymer and 1,2-polybutadiene.

[0016] In one embodiment, the low dielectric resin composition based on an organosilicon crosslinking agent further includes an initiator and an additive, and the additive includes at least one of a flame retardant and an inorganic filler.

[0017] In one embodiment, the low dielectric resin composition based on an organosilicon crosslinker further includes a second crosslinker, wherein the second crosslinker includes TAIC, TAC, DAP and divinylbenzene.

[0018] In one embodiment, the low dielectric resin composition based on silicone crosslinking agent includes, by mass, 50-90 parts of the thermosetting resin, 10-50 parts of the silicone crosslinking agent, 0-2 parts of the initiator and 30-40 parts of the additive.

[0019] On the other hand, the present invention also provides use of any of the above-mentioned low dielectric resin compositions based on an organosilicon crosslinking agent on a printed circuit board.

[0020] The present invention discloses a low dielectric resin composition based on an organosilicon crosslinker and its application, wherein the low dielectric resin composition based on an organosilicon crosslinker comprises a thermosetting resin, an organosilicon crosslinker and an initiator, the mass percentage of the organosilicon crosslinker in the low dielectric resin composition based on an organosilicon crosslinker is less than 50%, and the organosilicon crosslinker contains at least two unsaturated double bonds to ensure that the organosilicon crosslinker and the thermosetting resin are crosslinked by free radical polymerization. Through the free radical polymerization crosslinking of the organosilicon crosslinker and the thermosetting resin, the water absorption of the material is reduced, and the ultra-low dielectric loss of the material is achieved while ensuring that the glass transition temperature is sufficiently high; at the same time, the more stable structure of the organosilicon crosslinker is utilized to significantly enhance the resistance of the resin material to thermal oxidation aging, and the low dielectric resin composition based on the organosilicon crosslinker finally obtained is suitable for the field of high-frequency and high-speed materials, and can meet the requirements of high-speed information transmission for printed circuit board related materials. DETAILED DESCRIPTION

[0021] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] With the development of electronic communication equipment and smart mobile terminal equipment in the 5G era, the frequency of transmission signals in electronic products is getting higher and higher. Therefore, higher requirements are placed on electronic and electrical materials, especially materials related to printed circuit boards, in terms of low dielectric properties, high heat resistance, and environmental reliability.

[0023] Silicone-containing resin materials are generally considered to have the effects of reducing dielectric constant, reducing dielectric loss, assisting flame retardancy and enhancing thermal stability. Significant progress has been made in resin materials such as polyimide, epoxy resin and benzoxazine. At present, research on silicon-containing crosslinkers is mostly focused on the addition reaction of siloxane containing benzocyclobutene (BCB) structure, but the reaction temperature is usually over 260°C, which is much higher than the curing temperature of commonly used epoxy resins, and the preparation method is complicated, making its actual production challenging.

[0024] Therefore, the present invention discloses a low dielectric resin composition based on a silicone crosslinker and its application, and develops a resin composition that can be mass-produced and has both low dielectric loss and high resistance to thermal oxidation aging, meeting the needs of high-frequency, high-speed circuit boards and electronic packaging substrates.

[0025] Specifically, the low dielectric resin composition based on the organosilicon crosslinker of the present invention includes a thermosetting resin and an organosilicon crosslinker, and the low dielectric resin composition is obtained by free radical polymerization under high temperature thermal polymerization conditions. In one embodiment, the low dielectric resin composition based on the organosilicon crosslinker also includes an initiator, wherein the initiator is used to achieve a free radical polymerization reaction of the thermosetting resin and the organosilicon crosslinker.

[0026] Specifically, the thermosetting resin is a low-loss thermosetting resin that can be cross-linked by free radicals, that is, a prepolymer that can be cured by a free radical polymerization mechanism, including at least one of modified polyphenylene ether, modified maleimide resin, divinylbenzene copolymer and 1,2-polybutadiene. The organosilicon cross-linking agent is an organosilicon cross-linking agent that can be cross-linked by free radicals, so that after mixing the thermosetting resin and the organosilicon cross-linking agent, a free radical polymerization reaction is initiated by an initiator to form a thermosetting resin composition with low dielectric properties.

[0027] Specifically, the organosilicon crosslinker used in the low dielectric resin composition based on the organosilicon crosslinker of the present invention has a symmetrical structure and low polarity, and is a small molecule or oligomeric organosilicon crosslinker containing multiple unsaturated double bonds. The organosilicon crosslinker can reduce the water absorption of the entire resin composition, and achieve ultra-low dielectric loss of the resin composition (dielectric loss at 10 GHz is less than 0.0020) while ensuring that the glass transition temperature is sufficiently high or even unchanged, thereby ensuring the low dielectric constant of the material while taking into account the material's resistance to thermal oxidative aging. The low dielectric resin composition based on the organosilicon crosslinker has both low dielectric performance and high resistance to thermal oxidative aging, which is convenient for application in the field of high-frequency and high-speed materials.

[0028] Furthermore, the structural formula of the organosilicon crosslinker requires a low oxygen content and does not contain a strong polar group, which ensures the compatibility of the organosilicon crosslinker with the commonly used low-polarity resin component, avoids phase separation, and improves the solubility of the organosilicon crosslinker in a non-polar solution, further reducing the dielectric loss while ensuring the smooth progress of the reaction. Further, the organosilicon crosslinker includes a rigid structural skeleton, two or more unsaturated double bonds, and other low-polarity substituent groups. Through a rigid structural skeleton such as a benzene ring or biphenyl, the mechanical properties of the final resin composition are guaranteed, and through unsaturated double bonds, free radicals are provided to ensure that the crosslinking reaction reaches a high degree of crosslinking, and then through a low-polarity symmetrical structure, the ultra-low dielectric loss of the cured resin material is guaranteed, and high heat resistance and high resistance to thermal oxidation aging are provided by introducing highly stable silicon atoms.

[0029] Specifically, when the organosilicon crosslinking agent is a small molecule organosilicon crosslinking agent, its chemical formula is When the organosilicon crosslinking agent is an oligomeric organosilicon crosslinking agent, its chemical formula is Wherein n is a positive integer and n≥1, wherein each organosilicon crosslinking agent molecule includes at least two unsaturated double bonds and can be crosslinked by free radical polymerization to achieve a higher degree of crosslinking.

[0030] Further, for small molecule organosilicon crosslinkers, R is

[0031] Therefore, the low polarity is ensured while having strong rigidity, thereby ensuring the mechanical properties of the low dielectric resin composition based on the organosilicon crosslinking agent.

[0032] Furthermore, for the oligomeric silicone crosslinking agent, the number n of continuous siloxane main chain repeating units does not exceed 20, and optionally n=1-4, so as to ensure that the molecular weight of the silicone crosslinking agent is between 200 and 3000 and has good solubility, thereby ensuring smooth mixing and reaction of the silicone crosslinking agent with the thermosetting resin material.

[0033] Furthermore, the organosilicon crosslinking agent contains two or more unsaturated double bonds, and the unsaturated double bonds include vinyl, styrene, acrylate, methacrylate or maleimide. It is limited that each organosilicon crosslinking agent contains two or more unsaturated double bonds, so as to ensure that crosslinking can occur through free radical polymerization and achieve a high degree of crosslinking. Specifically, the unsaturated double bonds in R1-R3 come from the group The selection of R1-R3 is independent of each other to ensure that the organosilicon crosslinking agent contains at least two unsaturated double bonds, so that the organosilicon crosslinking agent has sufficient free radicals to crosslink with the thermosetting resin material through free radical polymerization reaction to achieve a higher degree of crosslinking.

[0034] Furthermore, the other substituents of the organosilicon crosslinking agent except the unsaturated double bonds are low polar groups, such as methyl -CH3, phenyl Benzyl Specifically, R1-R3 can further contain benzocyclobutene on the basis of ensuring that the organic silicon crosslinking agent has at least two unsaturated double bonds. In this way, the organosilicon crosslinking agent can be further cured at high temperature after being crosslinked with the thermosetting resin, and the dielectric loss of the low dielectric resin composition based on the organosilicon crosslinking agent can be further reduced.

[0035] Optionally, the low dielectric resin composition based on silicone crosslinker also includes additives. In parts by mass, the low dielectric resin composition based on silicone crosslinker includes 50-90 parts of the thermosetting resin, 10-50 parts of the silicone crosslinker, 0-2 parts of the initiator and 30-80 parts of the additives, thereby ensuring that the mass fraction of the silicone crosslinker in the low dielectric resin composition based on silicone crosslinker is less than 50%, so as to achieve a free radical polymerization reaction between the silicone crosslinker and the thermosetting resin and ensure the smooth progress of the crosslinking process.

[0036] Optionally, the additive includes a flame retardant or an inorganic filler, wherein the corresponding additive is added according to the performance requirements of the low dielectric resin composition based on the organosilicon crosslinker in actual application occasions. Optionally, when it is necessary to increase the flame retardant performance, a flame retardant is added to the low dielectric resin composition based on the organosilicon crosslinker; when it is necessary to change the particle size of the low dielectric resin composition based on the organosilicon crosslinker, the inorganic filler of the corresponding mesh size is increased accordingly.

[0037] Furthermore, under specific functional requirements, the low dielectric resin composition based on silicone crosslinker may also include a second crosslinker. For example, when the glass transition temperature of the low dielectric resin composition based on silicone crosslinker needs to be changed, a specific crosslinker such as TAIC (triallyl isocyanurate) is added accordingly.

[0038] It should be noted that the second cross-linking agent can be a cross-linking agent commonly used in the prior art, such as TAIC, TAC (triallyl cyanurate), DAP (diallyl phthalate) and divinylbenzene, or it can be other cross-linking agents added based on specific functional requirements. The selection of the second cross-linking agent can be added in combination with specific needs, which will not be repeated here. The present invention ensures that the low dielectric resin composition based on the silicone cross-linking agent is also compatible with various other types of additives by selecting a specific silicone cross-linking agent, especially other corresponding cross-linking agents can be selected for the corresponding enhanced performance, thereby further expanding the application of the low dielectric resin composition based on the silicone cross-linking agent in the field of high-frequency and high-speed materials, and meeting the requirements of high-speed information transmission for printed circuit board related materials.

[0039] The present invention prepares a thermosetting resin material with low dielectric loss by using a small molecule or oligomeric silicone crosslinking agent with a symmetrical structure, low polarity, and multiple unsaturated double bonds, thereby ensuring the low dielectric constant of the material while taking into account the material's resistance to thermal oxidative aging, thereby solving the problem in the prior art that it is difficult for resin materials to have both low dielectric properties and high resistance to thermal oxidative aging.

[0040] In one embodiment of the present invention, the low dielectric resin composition based on silicone crosslinking agent includes a thermosetting resin, an organosilicon crosslinking agent and an initiator, wherein the mass percentage of the organosilicon crosslinking agent in the low dielectric resin composition based on silicone crosslinking agent is less than 50%, and the organosilicon crosslinking agent contains at least two unsaturated double bonds to ensure that the organosilicon crosslinking agent and the thermosetting resin are crosslinked through free radical polymerization to achieve a higher degree of crosslinking.

[0041] In this embodiment, the structure of the organosilicon crosslinking agent is n≥1, n is a positive integer,

[0042] Among them, R is

[0043] R1-R3 are each independently selected from The group is composed to ensure that each silicone crosslinking agent molecule includes at least two unsaturated double bonds, thereby ensuring that crosslinking can occur through free radical polymerization to achieve a higher degree of crosslinking.

[0044] In this embodiment, further, in the structure of the organosilicon cross-linking agent, 1≤n≤20, and n is a positive integer.

[0045] In this embodiment, further, in the structure of the organosilicon cross-linking agent, 1≤n≤4, and n is a positive integer.

[0046] In this embodiment, the molecular weight of the organosilicon cross-linking agent is 200-3000.

[0047] In this embodiment, the thermosetting resin is a prepolymer that can be cured by a free radical polymerization mechanism, including modified polyphenylene ether, modified maleimide resin, divinylbenzene copolymer and 1,2-polybutadiene.

[0048] In this embodiment, further, the low dielectric resin composition based on the organosilicon crosslinking agent further includes an initiator and an additive, and the additive includes at least one of a flame retardant and an inorganic filler.

[0049] In this embodiment, the low dielectric resin composition based on an organosilicon cross-linking agent further includes a second cross-linking agent, and the second cross-linking agent includes TAIC, TAC, DAP and divinylbenzene.

[0050] In this embodiment, the low dielectric resin composition based on silicone crosslinking agent includes, by mass, 50-90 parts of the thermosetting resin, 10-50 parts of the silicone crosslinking agent, 0-2 parts of the initiator and 30-40 parts of the additive.

[0051] The technical solution of the present invention is further described as follows by setting up performance tests of specific embodiments and comparative examples.

[0052] Example 1

[0053] 75 parts of polyphenylene ether resin (SA9000), 25 parts of vinyl silicon crosslinker (1,4-bis(vinyldimethylsilyl)benzene) and 0.5 parts of initiator (BIPB, di-tert-butyl peroxide isopropylbenzene) were weighed by mass at 25°C and 1 atm, mixed and dissolved in toluene solvent, stirred continuously until uniformly mixed, and the mixed reaction solution was dried to obtain a resin composition. The resin composition was placed in a vacuum hot press, evacuated to a pressure below 5 mbar, heated to 210°C and then applied with a pressure of 1 MPa, kept warm for 90 minutes and then naturally cooled to room temperature to obtain the low dielectric resin composition based on silicone crosslinker according to the present invention.

[0054] Example 2

[0055] 75 parts of polyphenylene ether resin (SA9000), 25 parts of vinyl silicon crosslinker (1,1,3,3,3-tetraphenyl-1,3-divinyldisiloxane) and 1 part of initiator (BIPB) were weighed by mass at 25°C and 1 atm, mixed and dissolved in toluene solvent, stirred continuously until uniformly mixed, and the mixed reaction solution was dried to obtain a resin composition. The resin composition was placed in a vacuum hot press, evacuated to a pressure below 5 mbar, heated to 200°C and then applied with a pressure of 1 MPa, kept warm for 60 minutes and then naturally cooled to room temperature to obtain the low dielectric resin composition based on silicone crosslinker according to the present invention.

[0056] Example 3

[0057] 75 parts of polyphenylene ether resin (SA9000), 25 parts of vinyl silicon crosslinker (1,3-dimethyl-1,3-diphenyl-1,3-divinyldisiloxane) and 2 parts of initiator (BIPB) were weighed by mass at 25°C and 1 atm, dissolved in toluene solvent after mixing, and stirred continuously until uniformly mixed. The mixed reaction solution was dried to obtain a resin composition, and the resin composition was placed in a vacuum hot press, evacuated to a pressure below 5 mbar, heated to 200°C and then applied with a pressure of 1 MPa, kept warm for 100 minutes and then naturally cooled to room temperature to obtain the low dielectric resin composition based on silicone crosslinker of the present invention.

[0058] Example 4

[0059] 90 parts of polyphenylene ether resin (SA9000), 10 parts of vinyl silicon crosslinker (1,4-bis(vinyldimethylsilyl)benzene) and 0.5 parts of initiator (BIPB) were weighed by mass at 25°C and 1 atm, mixed and dissolved in toluene solvent, stirred continuously until uniformly mixed, and the mixed reaction solution was dried to obtain a resin composition. The resin composition was placed in a vacuum hot press, evacuated to a pressure below 5 mbar, heated to 190°C and then applied with a pressure of 1 MPa, kept warm for 150 minutes and then naturally cooled to room temperature to obtain the low dielectric resin composition based on silicone crosslinker according to the present invention.

[0060] Example 5

[0061] By mass, 60 parts of polyphenylene ether resin (SA9000), 40 parts of vinyl silicon crosslinker (1,4-bis(vinyldimethylsilyl)benzene) and 1 part of initiator (BIPB) were weighed at 25°C and 1 atm, mixed and dissolved in toluene solvent, stirred continuously until uniformly mixed, and the mixed reaction solution was dried to obtain a resin composition. The resin composition was placed in a vacuum hot press, evacuated to a pressure below 5 mbar, heated to 230°C and then applied with a pressure of 1 MPa, kept warm for 120 minutes and then naturally cooled to room temperature to obtain the low dielectric resin composition based on silicone crosslinker according to the present invention.

[0062] Example 6

[0063] By mass, 50 parts of polyphenylene ether resin (SA9000), 50 parts of vinyl silicon crosslinker (1,4-bis(vinyldimethylsilyl)benzene) and 1.5 parts of initiator (BIPB) were weighed at 25°C and 1atm, mixed and dissolved in toluene solvent, stirred continuously until uniformly mixed, and the mixed reaction solution was dried to obtain a resin composition. The resin composition was placed in a vacuum hot press, evacuated to a pressure below 5mbar, heated to 220°C and then applied with a pressure of 1MPa, kept warm for 75min and then naturally cooled to room temperature to obtain the low dielectric resin composition based on silicone crosslinker according to the present invention.

[0064] The present invention prepares a thermosetting resin material with low dielectric loss by using a small molecule or oligomeric organosilicon crosslinker with a symmetrical structure, low polarity, and multiple unsaturated double bonds. Each organosilicon crosslinker molecule contains two or more unsaturated double bonds, and the unsaturated double bonds include vinyl, styrene, acrylate, methacrylate or maleimide, which can be crosslinked by free radical polymerization to achieve a high degree of crosslinking. In this way, the smooth progress of the reaction is firstly ensured, while ensuring the low dielectric constant of the material and taking into account the material's resistance to thermal oxidation aging, solving the problem in the prior art that it is difficult for resin materials to take into account both low dielectric properties and high resistance to thermal oxidation aging, and effectively expanding the application of resin materials in the field of high-frequency and high-speed materials.

[0065] A conventional crosslinking agent is used to prepare a thermosetting resin material to compare and demonstrate the excellent performance of the low dielectric resin composition based on the organosilicon crosslinking agent of the present invention.

[0066] Comparative Example 1

[0067] By mass, 75 parts of polyphenylene ether resin (SA9000), 25 parts of triallyl isocyanurate and 0.5 parts of initiator (BIPB) were weighed at 25°C and 1 atm, mixed and dissolved in toluene solvent, stirred continuously until completely mixed, and cured by vacuum heating to obtain the resin composition of this comparative example 1.

[0068] Comparative Example 2

[0069] By mass, 75 parts of polyphenylene ether resin (SA9000), 25 parts of 1,2-polybutadiene block copolymer and 0.5 parts of initiator (BIPB) were weighed at 25°C and 1 atm, mixed and dissolved in toluene solvent, stirred continuously until completely mixed, and cured by vacuum heating to obtain the resin composition of this comparative example 2.

[0070] The dielectric properties and thermal oxidation aging resistance of the materials were tested using the resin compositions prepared in Examples 1-6 and Comparative Examples 1-2. The test data are shown in Table 1:

[0071] Table 1 Test results of resin composition performance

[0072]

[0073] It can be seen from the test results in Table 1 that the low dielectric resin composition based on the organosilicon crosslinker of the present invention forms a uniform product without phase separation. At the same time, on the basis of ensuring the stability of thermal oxidation aging resistance such as the glass transition temperature, it also shows excellent low dielectric loss performance. At the same time, combined with the performance changes of different materials, it can be seen that when the proportion of silicon-containing crosslinkers in the resin combination is close to or even exceeds 50 parts, the heat resistance of the resin composition will be poor. The organosilicon crosslinker in the present invention not only reduces the dielectric constant and dielectric loss of the resin material, but also makes the resin composition more thermally stable and more environmentally reliable. It can meet the requirements of electronic and electrical materials, especially printed circuit board materials, for low dielectric properties, high heat resistance and environmental reliability, and expands the application range of resin materials in printed circuit board related fields.

[0074] The present invention also discloses an application of a low dielectric resin composition based on a silicone crosslinker on a printed circuit board, wherein the low dielectric resin composition based on a silicone crosslinker is selected from a low dielectric resin composition based on a silicone crosslinker obtained in the above manner, and is used as a related material for a printed circuit board to meet the needs of high-performance packaging carriers and printed circuit boards.

[0075] In summary, the present invention discloses a low dielectric resin composition based on an organosilicon crosslinker and its application, wherein the low dielectric resin composition based on an organosilicon crosslinker includes a thermosetting resin, an organosilicon crosslinker and an initiator, the mass percentage of the organosilicon crosslinker in the low dielectric resin composition based on an organosilicon crosslinker is less than 50%, and the organosilicon crosslinker contains at least two unsaturated double bonds to ensure that the organosilicon crosslinker and the thermosetting resin are crosslinked by free radical polymerization. Through the free radical polymerization crosslinking of the organosilicon crosslinker and the thermosetting resin, the water absorption of the material is reduced, and the ultra-low dielectric loss of the material is achieved while ensuring that the glass transition temperature is sufficiently high; at the same time, the more stable structure of the organosilicon crosslinker is utilized to significantly enhance the resistance of the resin material to thermal oxidation aging, and the low dielectric resin composition based on the organosilicon crosslinker finally obtained is suitable for the field of high-frequency and high-speed materials, and can meet the requirements of high-speed information transmission for printed circuit board related materials.

[0076] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A low dielectric resin composition based on an organosilicon crosslinker, characterized in that: Including thermosetting resin and silicone crosslinker, The mass percentage of the organosilicon crosslinker in the low dielectric resin composition based on the organosilicon crosslinker is less than 50%, and the organosilicon crosslinker contains at least two unsaturated double bonds to ensure that the organosilicon crosslinker and the thermosetting resin are crosslinked through free radical polymerization.

2. The low dielectric resin composition based on an organosilicon crosslinker according to claim 1, characterized in that: The structure of the organosilicon crosslinking agent is n≥1, n is a positive integer, Among them, R is R1-R3 are each independently selected from The group is composed to ensure that each silicone crosslinking agent molecule includes at least two unsaturated double bonds.

3. The low dielectric resin composition based on an organosilicon crosslinker according to claim 2, characterized in that: In the structure of the organosilicon crosslinking agent, 1≤n≤20, and n is a positive integer.

4. The low dielectric resin composition based on an organosilicon crosslinker according to claim 3, characterized in that: In the structure of the organosilicon crosslinking agent, 1≤n≤4, and n is a positive integer.

5. The low dielectric resin composition based on an organosilicon crosslinker according to claim 2, characterized in that: The molecular weight of the organosilicon cross-linking agent is 200-3000.

6. The low dielectric resin composition based on an organosilicon crosslinker according to claim 1, characterized in that: The thermosetting resin is a prepolymer that can be cured by a free radical polymerization mechanism, including modified polyphenylene ether, modified maleimide resin, divinylbenzene copolymer and 1,2-polybutadiene.

7. The low dielectric resin composition based on an organosilicon crosslinker according to claim 1, characterized in that: The low dielectric resin composition based on an organic silicon crosslinking agent further includes an initiator and an additive, and the additive includes at least one of a flame retardant and an inorganic filler.

8. The low dielectric resin composition based on an organosilicon crosslinker according to claim 1, characterized in that: The low dielectric resin composition based on an organic silicon cross-linking agent further includes a second cross-linking agent, wherein the second cross-linking agent includes TAIC, TAC, DAP and divinylbenzene.

9. The low dielectric resin composition based on an organosilicon crosslinking agent according to claim 7, characterized in that: The low dielectric resin composition based on the organosilicon crosslinking agent comprises, by weight, 50-90 parts of the thermosetting resin, 10-50 parts of the organosilicon crosslinking agent, 0-2 parts of the initiator and 30-80 parts of the additive.

10. Use of the low dielectric resin composition based on an organosilicon crosslinking agent according to any one of claims 1 to 9 on a printed circuit board.

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