Wafer bearing mother disc, wafer bearing device and MOCVD (Metal Organic Chemical Vapor Deposition) equipment

Abstract

The invention provides a wafer bearing mother disc, a wafer bearing device and MOCVD equipment, the wafer bearing mother disc is provided with a shaft hole, accommodating grooves and a through hole which are arranged at intervals, the shaft hole is arranged in the middle of the wafer bearing mother disc and is suitable for a driving shaft to penetrate through, and the accommodating grooves are arranged at intervals along the circumferential direction of the shaft hole and are suitable for accommodating wafer bearing son discs; the wafer bearing mother disc is provided with a through hole, the through hole penetrates through the wafer bearing mother disc, the through hole is formed between the containing groove and the shaft hole, and / or the through hole is formed between the shaft hole and the periphery of the wafer bearing mother disc and is close to one side of the shaft hole, the driving shaft can drive the wafer bearing mother disc to rotate around the shaft hole, and the wafer bearing mother disc further comprises a covering part arranged on the upper side surface of the wafer bearing mother disc. The wafer bearing mother disc is provided with the through hole, and the central area of the wafer bearing mother disc can release the temperature stress to the position of the through hole, so that the wafer bearing mother disc can be prevented from being damaged, the service life of the wafer bearing mother disc can be prolonged, the heating area can be reduced, and the energy loss can be reduced.

Description

[0001] This application is a divisional application. The application number of the original application is 202411227401.0, the original application date is September 3, 2024, and the invention name of the original application is wafer-carrying mother disk, wafer-carrying device and MOCVD equipment. The entire contents of the original application are incorporated into this application by reference. Technical Field

[0002] The invention relates to the technical field of MOCVD equipment manufacturing, and in particular to a wafer carrying mother plate, a wafer carrying device having the same, and MOCVD equipment. Background Art

[0003] MOCVD is a new type of vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxy (VPE). In metal organic chemical vapor deposition (MOCVD) technology, the reaction gases are combined in the reactor at elevated temperatures to cause chemical interactions to deposit materials on the substrate. In MOCVD, ultrapure gases are injected into the reactor and finely metered to deposit very thin atomic layers onto semiconductor wafers. The surface reaction of organic compounds or metal organics and hydrides containing the required chemical elements creates conditions for crystal growth, forming the epitaxy of materials and compound semiconductors. Unlike traditional silicon semiconductors, these semiconductors can contain combinations of elements of Group III and Group V, Group II and Group VI, Group IV or Group IV, Group V and Group VI. In the field of modern semiconductor technology, MOCVD technology is known for its excellent thin film growth capabilities. This technology uses organic metal compounds and gas reaction sources to form thin films on substrates, and is widely used in the manufacture of high-performance semiconductor devices such as LEDs, lasers, solar cells, new energy vehicles, rail transportation, etc. The development of MOCVD technology has not only promoted a significant improvement in the performance of optoelectronic devices, but also provided key support for the miniaturization and functionalization of integrated circuits.

[0004] When using a wafer carrier to grow a thin film, the existing MOCVD solution needs to heat the wafer carrier disc. At present, the mainstream MOCVD in the market generally adopts two heating methods: induction heating and resistance heating. Compared with resistance heating, induction heating has the advantages of high heating efficiency, fast heating speed, low maintenance cost, and long service life. It is widely used in large-scale MOCVD heating. Induction heating MOCVD generally uses an induction coil to heat the wafer carrier disc through an alternating magnetic field generated by a large alternating current. The heat is transferred from the wafer carrier disc to the surface of the wafer through heat transfer to achieve thin film growth. In order to ensure heating efficiency and reduce energy loss, the induction coil heating magnetic field is generally concentrated at the wafer carrier disc position, so that it is quickly heated to the set temperature (generally 1000-1600℃), and the magnetic field density at the non-wafer position in the center of the wafer carrier disc is as small as possible. However, this design will still result in some magnetic field loss due to heating at non-wafer positions, increasing power loss. Since the temperature at the center of the wafer-carrying mother disk is higher than that at the edge, a temperature gradient will be generated on the wafer-carrying mother disk. The temperature gradient will generate temperature stress on the wafer-carrying mother disk, which will cause the wafer-carrying mother disk to deform and crack, especially in the central area of ​​the wafer-carrying mother disk, thereby reducing the service life of the wafer-carrying mother disk. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention is to provide a wafer-carrying master disk, wherein the wafer-carrying master disk can increase the service life.

[0006] The present invention also provides a wafer carrying device having the wafer carrying mother plate.

[0007] The present invention also provides an MOCVD device having the wafer carrying device.

[0008] According to the wafer-carrying mother disk of the first aspect embodiment of the present invention, the wafer-carrying mother disk is provided with an axial hole, a receiving groove and a through hole arranged at intervals, the axial hole is arranged in the middle of the wafer-carrying mother disk and is suitable for passing a driving shaft, the receiving grooves are arranged at intervals along the circumference of the axial hole and are suitable for receiving a wafer-carrying sub-disk, the through hole penetrates the wafer-carrying mother disk along the thickness direction of the wafer-carrying mother disk, the through hole is arranged between the receiving groove and the axial hole, and / or the through hole is arranged between the axial hole and the peripheral edge of the wafer-carrying mother disk and close to one side of the axial hole, the driving shaft can drive the wafer-carrying mother disk to rotate around the axial hole, and the wafer-carrying mother disk also includes a cover, and the cover is arranged on the upper surface of the wafer-carrying mother disk.

[0009] According to the wafer-carrying master disk of the present invention, a through hole is provided, and the wafer-carrying master disk can release temperature stress to the position of the through hole, thereby preventing the wafer-carrying master disk from being damaged, thereby increasing the service life of the wafer-carrying master disk and reducing production costs. At the same time, it can also reduce the heating area and reduce energy loss.

[0010] According to some embodiments of the present invention, there are multiple through holes, and the multiple through holes are arranged at intervals along the circumference of the axial hole.

[0011] According to some optional embodiments of the present invention, the through hole extends between two adjacent accommodating grooves.

[0012] According to some optional embodiments of the present invention, the through hole is arranged between the accommodating groove and the axial hole, and in the radial direction from inside to outside of the axial hole, the width of the through hole in the circumferential direction of the axial hole first gradually increases and then gradually decreases.

[0013] According to some embodiments of the present invention, the wafer carrying mother plate is a graphite piece, a ceramic material piece or a carbon fiber material piece.

[0014] According to an embodiment of the second aspect of the present invention, a wafer carrying device comprises: a wafer carrying mother plate according to the first aspect of the present invention; and a sub-plate, the sub-plate being arranged in the receiving groove and being used for carrying the wafer.

[0015] According to the wafer carrying device of the present invention, by setting the wafer carrying mother disk of the above-mentioned first aspect embodiment and setting a through hole, the central area of ​​the wafer carrying mother disk can release temperature stress to the position of the through hole, thereby preventing the wafer carrying mother disk from being damaged, and further increasing the service life of the wafer carrying mother disk, reducing production costs, and at the same time, reducing the heating area and reducing energy loss.

[0016] According to some embodiments of the present invention, the wafer carrying device includes: a covering member, the covering member is laid on a side surface of the wafer carrying mother plate where the receiving groove is formed, the covering member is provided with a through hole, and the receiving groove is suitable for being exposed from the through hole.

[0017] According to some embodiments of the present invention, the wafer carrying device includes: a heat insulating member, wherein the heat insulating member is disposed in the axial hole, and the heat insulating member is formed in a ring shape along the circumference of the axial hole.

[0018] According to the third aspect of the present invention, the MOCVD equipment comprises: a cavity, in which a receiving cavity is formed; according to the second aspect of the present invention, the wafer carrying device, wherein the wafer carrying mother plate (10) is rotatably arranged in the receiving cavity.

[0019] According to the MOCVD equipment of the present invention, by setting the wafer carrying device of the above-mentioned second aspect embodiment, a through hole is set on the wafer carrying mother disk, and the central area of ​​the wafer carrying mother disk can release temperature stress to the position of the through hole, thereby preventing the wafer carrying mother disk from being damaged, and further increasing the service life of the wafer carrying mother disk, reducing production costs, and at the same time, reducing the heating area and reducing energy loss.

[0020] According to some embodiments of the present invention, the method comprises: an induction coil, which is arranged at the lower side of the wafer carrying mother disk and is used to heat the wafer carrying mother disk.

[0021] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a cross-sectional view of a wafer carrier according to an embodiment of the present invention;

[0023] Figure 2 yes Figure 1 Schematic diagram of the wafer carrying mother plate, daughter plate and cover shown in;

[0024] Figure 3 yes Figure 2 An exploded view of the wafer carrying mother tray, daughter tray and cover shown in FIG.

[0025] Figure 4 yes Figure 3 Schematic diagram of a wafer carrying master disc shown in FIG.

[0026] Reference numerals:

[0027] 100. Wafer carrying device;

[0028] 10. Wafer carrying mother plate; 11. Axis hole; 12. Accommodating groove; 13. Through hole; 14. Connecting column;

[0029] 20. Sub-disk;

[0030] 30. Covering parts;

[0031] 200, cavity; 210, insulation barrel; 220, insulation felt; 230, top plate;

[0032] 300, induction coil;

[0033] 400, sprinkler head;

[0034] 1000. MOCVD equipment. DETAILED DESCRIPTION

[0035] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.

[0036] Please refer to the following Figure 1-4 A wafer carrying master tray 10 according to an embodiment of the present invention is described.

[0037] Reference Figure 1 , Figure 2 , Figure 3 and Figure 4 According to the wafer-carrying mother plate 10 of the first embodiment of the present invention, the wafer-carrying mother plate 10 is provided with an axial hole 11, a receiving groove 12 and a through hole 13 arranged at intervals. The axial hole 11 is arranged in the middle of the wafer-carrying mother plate 10 and is suitable for passing the driving shaft. The receiving groove 12 is arranged at intervals along the circumference of the axial hole 11 and is suitable for accommodating the wafer-carrying sub-plate 20. The through hole 13 is arranged along the thickness direction of the wafer-carrying mother plate 10 (such as Figure 3 The upper and lower directions (as shown) penetrate the wafer carrying master plate 10.

[0038] For example, Figure 1 , Figure 2 , Figure 3 and Figure 4 As shown, the axial hole 11 is arranged in the middle of the wafer carrying mother disk 10, and the driving shaft passes through the axial hole 11 to drive the wafer carrying mother disk 10 to rotate. There are multiple accommodating grooves 12, and the multiple accommodating grooves 12 are arranged at intervals along the circumference of the axial hole 11, and the wafer carrying sub-disk 20 is arranged in the accommodating grooves 12.

[0039] When using the wafer-carrying mother plate 10 to grow a thin film on a wafer, first place the wafer on the wafer-carrying sub-plate 20, then drive the wafer-carrying mother plate 10 to rotate around the axis hole 11, and the wafer-carrying sub-plate 20 rotates on its own, then heat the wafer-carrying mother plate 10 and the wafer-carrying sub-plate 20, and then the thin film can be grown on the wafer.

[0040] The wafer-carrying mother disk 10 of the present invention is provided with a through hole 13. When the wafer-carrying mother disk 10 is inductively heated, even if the wafer-carrying mother disk 10 generates temperature stress in the radial direction due to the temperature gradient, the wafer-carrying mother disk 10 can also release the temperature stress to the position of the through hole 13. Compared with the prior art in which the wafer-carrying mother disk 10 cannot release the temperature stress, resulting in the wafer-carrying mother disk 10 being warped, deformed or cracked, the wafer-carrying mother disk 10 of the present application can prevent the wafer-carrying mother disk 10 from being damaged by cracking or deformation by releasing the temperature stress to the through hole 13, thereby improving the service life of the wafer-carrying mother disk 10 and reducing the production cost. At the same time, the through hole 13 can reduce the area of ​​the wafer-carrying mother disk 10. When the wafer-carrying mother disk 10 is heated, the heating area of ​​the wafer-carrying mother disk 10 can be reduced, thereby reducing energy loss and improving energy utilization efficiency.

[0041] According to the wafer-carrying mother disk 10 of an embodiment of the present invention, a through hole 13 is provided, and the wafer-carrying mother disk 10 can release temperature stress to the position of the through hole 13, thereby preventing the wafer-carrying mother disk 10 from being damaged, thereby increasing the service life of the wafer-carrying mother disk 10 and reducing production costs. At the same time, it can also reduce the heating area and reduce energy loss.

[0042] According to some embodiments of the present invention, referring to Figure 3 and Figure 4 The through hole 13 is arranged between the receiving groove 12 and the shaft hole 11. Therefore, the through hole 13 is arranged at a reasonable position, so that the wafer carrying mother plate 10 can be deformed normally, and at the same time, the daughter plate 20 can be guaranteed to grow a thin film normally.

[0043] Further, refer to Figure 3 and Figure 4 The through hole 13 is arranged between the shaft hole 11 and the periphery of the wafer-carrying mother plate 10 and close to one side of the shaft hole 11. Thus, the through hole 13 is arranged at a reasonable position, so that the center of the wafer-carrying mother plate 10 can deform normally, and at the same time, it can also ensure that the daughter plate 20 can grow a thin film normally. For example, Figure 3 and Figure 4 As shown, the through hole 13 is arranged between the shaft hole 11 and the periphery of the wafer carrying master plate 10 and close to one side of the shaft hole 11 .

[0044] According to some embodiments of the present invention, referring to Figure 3 and Figure 4, the number of through holes 13 is multiple, that is, the number of through holes 13 can be two, three or four or more, and the multiple through holes 13 are arranged at intervals along the circumference of the shaft hole 11. Therefore, the multiple through holes 13 can facilitate the central area of ​​the wafer-carrying mother disc 10 to release the temperature stress to the multiple through holes 13, so as to minimize the influence of the temperature stress on the wafer-carrying mother disc 10, and further ensure the service life of the wafer-carrying mother disc 10. At the same time, the arrangement form of the multiple through holes 13 is reasonable, so that the wafer-carrying mother disc 10 can release the temperature stress to the corresponding through holes 13 uniformly in the circumferential direction, and further ensure the service life of the wafer-carrying mother disc 10.

[0045] For example, Figure 3 and Figure 4 As shown, six receiving grooves 12 are arranged, and the six receiving grooves 12 are arranged at intervals along the circumference of the wafer carrying mother plate 10. The through holes 13 are arranged between the receiving grooves 12 and the axial hole 11. The number of the through holes 13 is six, and the six through holes 13 are arranged at intervals along the circumference of the axial hole 11.

[0046] According to some optional embodiments of the present invention, referring to Figure 3 and Figure 4 , the through hole 13 extends between two adjacent receiving grooves 12. Thus, the space of the wafer-carrying master disc 10 can be fully utilized, thereby ensuring the rationality of the setting of the through hole 13, and at the same time, it is convenient for the adjacent receiving grooves 12 to release the temperature stress to the through hole 13 in the middle position, thereby preventing the wafer-carrying master disc 10 from being damaged.

[0047] According to some optional embodiments of the present invention, referring to Figure 3 and Figure 4 The through hole 13 is arranged between the receiving groove 12 and the shaft hole 11. In the radial direction from the inside to the outside of the shaft hole 11, the width of the through hole 13 in the circumferential direction of the shaft hole 11 gradually increases and then gradually decreases. Therefore, limited by the setting position of the through hole 13, the through hole 13 is set in this way to ensure the area of ​​the through hole 13, thereby ensuring the space for the wafer-carrying mother plate 10 to release stress, and at the same time, the heating area can be minimized to the greatest extent, thereby reducing the heating power and reducing energy loss.

[0048] According to some optional embodiments of the present invention, referring to Figure 4, a connecting column 14 is provided radially outwardly along the shaft hole 11, and the connecting column 14 separates the through hole 13 arranged between the receiving groove 12 and the shaft hole 11. On the one hand, the connecting column 14 plays a connecting role, fixing the central area of ​​the wafer-carrying mother disk 10 around the shaft hole 11 with the edge of the wafer-carrying mother disk 10, and on the other hand, the temperature of the central area of ​​the wafer-carrying mother disk 10 is high, and the temperature of the edge of the wafer-carrying mother disk 10 is low. After the connecting column 14 is provided, the temperature can be conducted along the connecting column 14, so as to prevent the local temperature accumulation of the wafer-carrying mother disk 10 from causing excessive temperature damage to the wafer-carrying mother disk 10.

[0049] According to some embodiments of the present invention, referring to Figure 3 and Figure 4 The wafer carrier master plate 10 is one of graphite, ceramic or carbon fiber. Thus, the heat absorption rate of the wafer carrier master plate 10 can be guaranteed, and then the growth speed of the film can be guaranteed, and at the same time, the heating power can be reduced.

[0050] According to the second aspect of the present invention, the wafer carrier 100 is Figure 1 , Figure 2 and Figure 3 , including: the wafer carrying mother plate 10 and the daughter plate 20 of the first aspect of this embodiment, the daughter plate 20 is arranged in the receiving groove 12, and the daughter plate 20 is used to carry the wafer.

[0051] According to the wafer carrying device 100 of an embodiment of the present invention, the wafer carrying mother disk 10 of the first aspect of the above-mentioned embodiment is provided, and a through hole 13 is provided. The central area of ​​the wafer carrying mother disk 10 can release temperature stress toward the position of the through hole 13, thereby preventing the wafer carrying mother disk 10 from being damaged, thereby improving the service life of the wafer carrying mother disk 10 and reducing the production cost. At the same time, it can also reduce the heating area and reduce the energy loss.

[0052] According to some embodiments of the present invention, referring to Figure 3 and Figure 4 The wafer carrier 100 includes a cover 30, which is laid on a side surface (such as Figure 4 The cover 30 is provided with a through hole, and the receiving groove 12 is suitable for being exposed from the through hole. Therefore, the cover 30 can prevent dust, particles and other pollutants in the air from entering the interior of the wafer carrying master plate 10, ensuring the cleanliness of the wafer surface, and at the same time, it can prevent a film from falling on the wafer carrying master plate 10, thereby protecting the wafer carrying master plate 10.

[0053] For example, Figure 3 and Figure 4As shown, the cover 30 is disposed on the upper surface of the wafer carrier mother plate 10, and a through hole corresponding to the receiving groove 12 in the up-down direction is disposed on the cover 30, and the receiving groove 12 is exposed from the through hole. Preferably, the cover 30 is a special ceramic cover 30, and the special ceramic can withstand high temperatures above 1700°C and has low thermal conductivity, thereby reducing the temperature transfer at the wafer position and ensuring that the temperature is concentrated on the wafer to the maximum extent.

[0054] According to some embodiments of the present invention, referring to Figure 1 The wafer carrying device 100 includes: a heat insulating member, which is arranged in the shaft hole 11 and is formed in a ring shape along the circumference of the shaft hole 11. Thus, the heat insulating member can isolate the driving shaft from the wafer carrying master plate 10, thereby preventing heat from being transferred from the driving shaft to the wafer carrying master plate 10, causing the wafer carrying master plate 10 to be damaged by temperature stress, thereby protecting the wafer carrying master plate 10.

[0055] According to the MOCVD device 1000 of the third aspect of the present invention, Figure 1 , Figure 2 and Figure 3 , comprising: a cavity 200 and a wafer carrying device 100 of the second aspect of this embodiment. A receiving cavity is formed in the cavity 200; and the wafer carrying mother plate 10 is rotatably disposed in the receiving cavity.

[0056] According to the MOCVD device 1000 of the embodiment of the present invention, a wafer-carrying mother disk 10 of the first aspect of the above-mentioned embodiment is provided, and a through hole 13 is provided on the wafer-carrying mother disk 10. The central area of ​​the wafer-carrying mother disk 10 can release temperature stress toward the position of the through hole 13, thereby preventing the wafer-carrying mother disk 10 from being damaged, thereby improving the service life of the wafer-carrying mother disk 10 and reducing the production cost. At the same time, it can also reduce the heating area and reduce the energy loss.

[0057] Furthermore, if Figure 1 As shown, the chamber 200 includes: a heat preservation barrel 210, a heat preservation felt 220 and a top plate 230. The top plate 230 is arranged on the upper side of the wafer-carrying mother plate 10. The heat preservation barrel 210 is formed into a ring along the circumference of the top plate 230. The upper end of the heat preservation barrel 210 is connected to the top plate 230. The heat preservation felt 220 is laid on the lower side of the wafer-carrying mother plate 10 and the outer wall of the heat preservation barrel 210. In this way, the temperature in the accommodating cavity of the chamber 200 can be guaranteed, so that the film can be grown at a suitable temperature, and then the yield rate can be guaranteed.

[0058] Preferably, the thermal insulation felt 220 is a graphite thermal insulation felt 220, which can ensure a better thermal insulation effect in the cavity 200, thereby ensuring that the film can grow normally.

[0059] Furthermore, if Figure 1As shown, the MOCVD device 1000 also includes: an induction coil 300 and a shower head 400 . The induction coil 300 is arranged on the lower side of the wafer-carrying mother disk 10 and is used to heat the wafer-carrying mother disk 10 . The shower head 400 is arranged on the upper side of the wafer-carrying mother disk 10 and is fixed on the top plate 230 .

[0060] When using the MOCVD device 1000 to grow a thin film on a wafer, the sub-disk 20 is first placed in the receiving slot 12, and then the wafer is loaded on the sub-disk 20. Thereafter, the wafer-carrying mother disk 10 is driven to rotate by the driving shaft, and the sub-disk 20 rotates relative to the wafer-carrying mother disk 10. At this time, the induction coil 300 is energized, and the induction coil 300 generates eddy currents through electromagnetic induction. The eddy currents generate heat in the wafer-carrying mother disk 10, and then the spray head 400 sprays the thin film raw material onto the wafer, thereby achieving the growth of a thin film on the wafer.

[0061] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0062] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0063] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0064] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0065] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A wafer-carrying master disc (10), characterized in that: The wafer-carrying mother disk (10) is provided with an axial hole (11), a receiving groove (12) and a through hole (13) arranged at intervals, wherein the axial hole (11) is arranged in the middle of the wafer-carrying mother disk (10) and is suitable for passing a driving shaft, the receiving groove (12) is arranged at intervals along the circumference of the axial hole (11) and is suitable for receiving a wafer-carrying sub-disk (20), the through hole (13) penetrates the wafer-carrying mother disk (10) along the thickness direction of the wafer-carrying mother disk (10), and the through hole (13) 13) is arranged between the accommodating groove (12) and the axial hole (11), and / or the through hole (13) is arranged between the axial hole (11) and the peripheral edge of the wafer-carrying mother disk (10) and close to one side of the axial hole (11), the driving shaft can drive the wafer-carrying mother disk (30) to rotate around the axial hole (11), and the wafer-carrying mother disk (10) further includes a covering member (30), and the covering member (30) is arranged on the upper surface of the wafer-carrying mother disk (30).

2. The wafer carrying master disc (10) according to claim 1, characterized in that: The number of the through holes (13) is multiple, and the multiple through holes (13) are arranged at intervals along the circumference of the shaft hole (11).

3. The wafer carrying master disc (10) according to claim 2, characterized in that: The through hole (13) extends between two adjacent accommodating grooves (12).

4. The wafer carrying master disc (10) according to claim 3, characterized in that: The through hole (13) is arranged between the accommodating groove (12) and the axial hole (11), and in the radial direction from inside to outside of the axial hole (11), the width of the through hole (13) in the circumferential direction of the axial hole (11) first gradually increases and then gradually decreases.

5. The wafer carrying master disc (10) according to any one of claims 1 to 4, characterized in that: The wafer-carrying mother plate (10) is a graphite piece, a ceramic material piece or a carbon fiber material piece.

6. A wafer carrying device (100), characterized in that: include: The wafer carrying master disc (10) according to any one of claims 1 to 5; A sub-plate (20), the sub-plate (20) being arranged in the receiving groove (12), and the sub-plate (20) being used for carrying a wafer.

7. The wafer carrying device (100) according to claim 6, characterized in that: include: A covering member (30) is laid on a side surface of the wafer-carrying mother plate (10) where a receiving groove (12) is formed, and a through hole is provided on the covering member (30), and the receiving groove (12) is suitable for being exposed from the through hole.

8. The wafer carrying device (100) according to claim 6, characterized in that: include: A heat insulating member is arranged in the shaft hole (11), and the heat insulating member is formed into a ring shape along the circumference of the shaft hole (11).

9. A MOCVD device (1000), characterized in that: include: A cavity (200), wherein a receiving cavity is formed in the cavity (200); In the wafer carrying device (100) described in any one of claims 6 to 8, the wafer carrying mother plate (10) is rotatably arranged in the accommodating cavity.

10. The MOCVD device (1000) according to claim 9, characterized in that: The invention comprises: an induction coil (300), wherein the induction coil (300) is arranged on the lower side of the wafer-carrying mother disk (10) and is used for heating the wafer-carrying mother disk (10).

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