Temperature control device and temperature control system for atom magnetometer

Abstract

The invention relates to the field of electronic power, and discloses a temperature control device and a temperature control system for an atom magnetometer, and the device comprises a target current output module, a thick film resistance wire module, a heat preservation outer housing and a heat preservation inner housing. The target current output module is arranged outside the heat preservation outer shell; a thermal insulation material is filled between the thermal insulation outer shell and the thermal insulation inner shell; the thick-film resistance wire module is positioned at the end part of the probe; a signal output positive end and a signal output negative end of the target current output module are respectively connected with a first end and a second end of the thick-film resistance wire module; the thick-film resistance wire module is provided with a substrate, a first-layer resistance wire structure and a second-layer resistance wire structure, wherein the first-layer resistance wire structure and the second-layer resistance wire structure are sequentially stacked on the substrate, and the projection of the first-layer resistance wire structure and the projection of the second-layer resistance wire structure on the substrate coincide with each other. Therefore, the effects of high efficiency and miniaturization are achieved through the compact structural design, the temperature control device is convenient to carry and install, and the flexibility and convenience of the temperature control device are improved.

Description

Technical Field

[0001] The present application relates to the field of electronic power, and in particular to a temperature control device and a temperature control system for an atomic magnetometer. Background Art

[0002] In quantum precision measurement technologies such as alkali metal atomic magnetometers or inertial measurement devices, it is necessary to detect magnetic fields or inertial signals with high sensitivity. Alkali metal atomic gas chambers are the core components of these devices. In order to achieve high-precision measurements, the density of alkali metal atoms in the gas chamber needs to reach a certain level, which is usually achieved by heating the gas chamber at high temperature.

[0003] However, the temperature control method for heating the gas chamber of the atomic magnetometer in the related art still has limitations, and its flexibility and convenience need to be further improved. Summary of the invention

[0004] The present application aims to solve at least one of the technical problems in the related art to a certain extent. To this end, the present application proposes a temperature control device and a temperature control system for an atomic magnetometer. The main technical solutions adopted in the present application include: In a first aspect, an embodiment of the present application provides a temperature control device for an atomic magnetometer, the device comprising: a target current output module, a thick film resistance wire module, a heat-insulating outer shell and a heat-insulating inner shell; the target current output module is arranged outside the heat-insulating outer shell; the heat-insulating inner shell is arranged inside the heat-insulating outer shell, and a heat-insulating material is filled between the heat-insulating outer shell and the heat-insulating inner shell; the thick film resistance wire module is arranged inside the heat-insulating inner shell, and when the probe of the atomic magnetometer is extended into the heat-insulating inner shell, the thick film resistance wire module is located at the end of the probe; wherein: the signal output positive end of the target current output module is connected to the thick film resistance wire module; The first end of the resistance wire module is connected, and the signal output negative end of the target current output module is connected to the second end of the thick film resistance wire module; the thick film resistance wire module comprises a substrate, a first layer resistance wire structure and a second layer resistance wire structure stacked in sequence on the substrate, the first end of the first layer resistance wire structure is connected to the first end of the thick film resistance wire module, the second end of the first layer resistance wire structure is connected to the first end of the second layer resistance wire structure, and the second end of the second layer resistance wire structure is connected to the second end of the thick film resistance wire module; the projections of the first layer resistance wire structure and the second layer resistance wire structure on the substrate overlap with each other.

[0005] In one of the embodiments, the temperature control device further includes a temperature sensor, which is disposed in the heat-insulating inner shell and is close to a side surface of the probe.

[0006] In one embodiment, the substrate is divided into a middle area and a peripheral area; the first layer of the resistance wire structure covers the middle area and the peripheral area of ​​the substrate; and the second layer of the resistance wire structure covers the middle area and the peripheral area of ​​the substrate.

[0007] In one of the embodiments, a first pad and a second pad stacked in sequence are provided on the substrate; the projections of the first pad and the second pad on the substrate do not overlap with each other; the first pad is connected to the first end of the first layer of resistance wire structure; and the second pad is connected to the second end of the second layer of resistance wire structure.

[0008] In one embodiment, the target current output module includes a main control unit and an inverter circuit; the output end of the main control unit is connected to the input end of the inverter circuit, and the output end of the inverter circuit is connected to the thick film resistor module; the main control unit is configured to provide a DC voltage signal to the inverter circuit to control the output of the inverter circuit; the inverter circuit is configured to generate a target AC signal that meets preset conditions based on the DC voltage signal.

[0009] In one embodiment, the inverter circuit includes a pulse signal generating circuit, a signal isolation and shifting circuit and an H-bridge circuit; the input end of the pulse signal generating circuit is connected to the output end of the main control unit, and the output end of the pulse signal generating circuit is connected to the input end of the signal isolation and shifting circuit; the output end of the signal isolation and shifting circuit is connected to the H-bridge circuit; the input end of the H-bridge circuit is also connected to the output end of the main control unit, and the signal output positive end of the H-bridge circuit serves as the signal output positive end of the target current output module, and the signal output negative end of the H-bridge circuit serves as the signal output negative end of the target current output module; the pulse signal generating circuit is configured to receive a DC voltage signal provided by the main control unit and generate a pulse width modulation signal based on the DC voltage signal; the signal isolation and shifting circuit is configured to perform signal isolation and level shifting on the pulse width modulation signal to generate a target pulse width modulation signal; the H-bridge circuit is configured to convert the DC voltage signal into a target AC signal under the control of the target pulse width modulation signal.

[0010] In one of the embodiments, the pulse width modulation signal includes a first pulse width modulation signal and a second pulse width modulation signal; the pulse signal generating circuit includes a dead time control unit, and the dead time control unit is configured to insert a dead time period that meets a preset time condition between the first pulse width modulation signal and the second pulse width modulation signal.

[0011] In one embodiment, the H-bridge circuit includes an upper bridge arm and a lower bridge arm; the signal isolation and shifting circuit includes a bootstrap unit, and the bootstrap unit is configured to provide a driving signal to the upper bridge arm.

[0012] In a second aspect, an embodiment of the present application provides a temperature control system for an atomic magnetometer, and the temperature control system for an atomic magnetometer includes the contents of any of the temperature control devices described above.

[0013] In one embodiment, the temperature control system also includes a host computer that is communicatively connected to the temperature control device; the host computer is used to send a start instruction to the temperature control device when the atomic magnetometer is in an environment below a preset temperature, so as to pre-start the temperature control device and put the temperature control device into a working state.

[0014] In the above embodiment, a temperature control device for an atomic magnetometer is proposed, wherein the target current output module can provide a stable current for the thick film resistance wire module, and the thick film resistance wire module can achieve a uniform and efficient heating effect at the end of the atomic magnetometer probe through its unique double-layer resistance wire structure design. In addition, the temperature control device highly integrates the target current output module, the thick film resistance wire module and the insulation structure, and does not take up too much space while realizing the integration of heating and insulation functions, thus meeting the requirements of miniaturization of precision measuring equipment such as atomic magnetometers. Thus, miniaturization is achieved through a compact structural design, thereby making the temperature control device for an atomic magnetometer more portable, easy to carry and install, and further improving its flexibility and convenience in practical applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0016] Figure 1 A structural block diagram of a temperature control device for an atomic magnetometer provided according to an embodiment of the present application; Figure 2a A structural block diagram of a temperature control device for an atomic magnetometer provided according to another embodiment of the present application; Figure 2b This is a schematic structural diagram of a temperature control device for an atomic magnetometer provided according to another embodiment of the present application; Figure 3 A schematic top view of the structure of a thick film resistance wire module provided according to an embodiment of the present application; Figure 4 A structural block diagram of a temperature control device for an atomic magnetometer provided according to another embodiment of the present application; Figure 5 is a structural block diagram of a target current output module provided according to an embodiment of the present application; Figure 6 It is a structural block diagram of a target current output module provided according to another embodiment of the present application. DETAILED DESCRIPTION

[0017] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0018] Quantum precision measurement technologies such as alkali metal atomic magnetometers and inertial measurement devices require the detection of magnetic fields or inertial signals at high sensitivity, and alkali metal atomic gas chambers are the core components of these devices. In order to achieve high-precision measurements and improve the detection signal-to-noise ratio of the atomic magnetometer, the density of alkali metal atoms in the gas chamber needs to reach a certain level, so the temperature needs to be increased, which usually requires high-temperature heating of the gas chamber to achieve. Traditional heating methods include hot air heating, optical heating, and electric heating, among which electric heating has become the mainstream method due to its simple structure and easy control. However, the magnetic field generated by the current during electric heating will interfere with the measurement results and become an important factor limiting the measurement sensitivity.

[0019] In order to suppress the magnetic field interference generated by the heating current, related technologies often use technologies such as symmetrical winding and high-frequency modulation of the drive current. For example, by modulating the heating current to the radio frequency band through high-frequency electric heating, the frequency band in which the measuring device is sensitive to low-frequency magnetic fields can be effectively avoided. However, although the high-frequency sinusoidal driver with a power amplifier as the core has low noise, it has low energy utilization and requires additional heat dissipation; the traditional discrete temperature control system is large in size and has poor mobility, making it difficult to meet the needs of high integration.

[0020] Therefore, in order to better meet the requirements of gas chamber heating and avoid the interference of magnetic field noise on precision measurement, there is an urgent need for a high thermal efficiency and miniaturized temperature-controlled heating device that can improve the performance and sensitivity of the atomic magnetometer, thereby providing a better solution for quantum precision measurement technology.

[0021] Based on this, according to an embodiment of the present application, a temperature control device embodiment for an atomic magnetometer is provided, such as Figure 1 As shown, the temperature control device 100 for an atomic magnetometer includes: a target current output module 110 , a thick film resistance wire module 120 , a heat-insulating outer shell 140 and a heat-insulating inner shell 130 .

[0022] It is understandable that in order to effectively insulate the probe of the atomic magnetometer and reduce heat loss and interference caused by external temperature fluctuations, a double-layer insulation structure can be designed. Specifically, the insulation inner shell 130 is arranged in the insulation outer shell 140, and the insulation outer shell 140 and the insulation inner shell 130 are filled with insulation material 150. Among them, the insulation inner shell 130 is mainly used to provide a relatively stable environment for key components that affect the sensitivity of the atomic magnetometer, such as the thick film resistance wire module 120 and the probe 160 of the atomic magnetometer, to reduce the impact of external temperature fluctuations on them. In addition to having the same insulation effect as the insulation inner shell 130, the insulation outer shell 140 can also serve as an external protective layer of the entire temperature control device, providing mechanical protection and reducing the impact of external temperature fluctuations. Further, in terms of material selection, the insulation outer shell 140 and the insulation inner shell 130 can be made of materials with good thermal insulation properties at the same time. For example, the heat-insulating outer shell 140 and the heat-insulating inner shell 130 can be made of resin material based on 3D printing technology according to the required thickness of the heat-insulating layer and the size of the probe. At the same time, considering the good barrier properties, extremely low thermal conductivity and high adsorption capacity of aerogel materials, micro-nano porous materials composed of colloidal particles or polymer molecules, i.e., aerogel materials, can also be used as heat-insulating materials 150, which are filled between the heat-insulating outer shell 140 and the heat-insulating inner shell 130. In addition, in order to further improve the heat-insulating effect, the gap inside the heat-insulating inner shell 130 can also be filled with aerogel to better achieve heat insulation.

[0023] Furthermore, the target current output module 110 is arranged outside the thermal insulation outer shell 140, and the thick film resistance wire module 120 is arranged inside the thermal insulation inner shell 130. When the probe 160 of the atomic magnetometer extends into the thermal insulation inner shell 130, the thick film resistance wire module 120 is located at the end of the probe 160.

[0024] The target current output module 110 may refer to a component for providing a stable current to the thick film resistance wire module 120, and may be used to output a specific current signal to drive the thick film resistance wire module 120 to perform a heating operation. Specifically, through the target current output module 110, the heating method of the thick film resistance wire module 120 may be controlled and adjusted based on the real-time heating temperature of the temperature control device 100 and the pre-set target temperature that meets the working environment of the atomic magnetometer.

[0025] It should be understood that, based on the Biot-Savart law, after the target current output module 110 is powered on and starts working, current will flow through its circuit, thereby generating a magnetic effect that affects the detection accuracy of the atomic magnetometer. Therefore, the target current output module 110 is arranged independently of the entire double-layer insulation layer to reduce magnetic field interference.

[0026] The thick film resistance wire module 120 may refer to a key component for realizing a heating function, which can generate heat when powered on to realize a heating function. Specifically, the signal output positive terminal of the target current output module 110 is connected to a first terminal of the thick film resistance wire module 120, and the signal output negative terminal of the target current output module 110 is connected to a second terminal of the thick film resistance wire module 120.

[0027] Furthermore, the thick film resistance wire module 120 also includes a substrate 122, a first layer resistance wire structure 124 and a second layer resistance wire structure 126 stacked sequentially on the substrate 122, a first end of the first layer resistance wire structure 124 is connected to a first end of the thick film resistance wire module 120, a second end of the first layer resistance wire structure 124 is connected to a first end of the second layer resistance wire structure 126, and a second end of the second layer resistance wire structure 126 is connected to a second end of the thick film resistance wire module 120. The projections of the first layer resistance wire structure 124 and the second layer resistance wire structure 126 on the substrate 122 overlap with each other.

[0028] Exemplarily, the thick film resistance wire module 120 can be a double-layer single-sided heating plate, or a single-layer double-sided heating plate. Taking the single-layer double-sided as an example, the resistance wire structure arranged on the upper side can be regarded as the first layer resistance wire structure 124, and the resistance wire structure arranged on the lower side can be regarded as the second layer resistance wire structure 126. A hole structure is provided at the second end of the first layer resistance wire structure 124, so that the target current can start from the signal output positive end of the target current output module 110, and after traversing the first layer resistance wire structure 124, pass through the second end of the first layer resistance wire structure 124, and enter the other side through the in-situ via hole. That is, the target current enters the first end of the second layer resistance wire structure 126 through the hole structure, and traverses the second layer resistance wire structure 126 in the opposite direction again according to the same trajectory, and finally returns to the signal output negative end of the target current output module 110. This double-sided wiring design and connection method makes the upper and lower heating wires in series, that is, when the first layer resistance wire structure 124 and the second layer resistance wire structure 126 are working, the current flowing through them is the same, so as to achieve uniform heating of the atomic magnetometer probe. In addition, since the projections of the first layer resistance wire structure 124 and the second layer resistance wire structure 126 on the substrate 122 are overlapped, that is, the wiring tracks of the upper and lower surfaces are exactly the same, the currents flowing through the first layer resistance wire structure 124 and the second layer resistance wire structure 126 are opposite in direction when they are working, thereby reducing magnetic field interference and improving the measurement accuracy of the atomic magnetometer.

[0029] Optionally, thermal conductive silicone grease may be applied between the thick film resistance wire module 120 and the probe 160 of the atomic magnetometer. Based on Joule's law of energy conversion when current passes through a conductor, after current is passed through the resistance wire, heat will be generated when current flows through the resistance wire because the resistance wire material has a certain resistance value. The heat is transmitted to the atomic gas chamber through the thermal conductive silicone grease to increase the atomic density, thereby improving the detection signal-to-noise ratio of the atomic magnetometer, and ultimately making the detection accuracy of the atomic magnetometer higher.

[0030] It is understandable that, if applied to the scene of precision measuring equipment such as atomic magnetometer, it is necessary to effectively reduce the volume of the temperature control device while satisfying the heating effect, and achieve the goal of miniaturization, so as to facilitate installation and use. Exemplarily, based on the design method of the double-layer resistance wire structure of the thick film resistance wire module 120, the overall thickness of the thick film resistance wire module 120 can be designed to be 0.5mm according to the air chamber size, the light-through position or the probe size of the atomic magnetometer. Similarly, based on the Biot-Safar law, when the current passes through the resistance wire to generate heat, a magnetic effect will also be generated. As a sensor for magnetic field measurement, the atomic magnetometer is sensitive to the magnetic field, so for the magnetometer, heating will generate magnetic field interference. Therefore, out of the requirement for non-magnetism, to ensure that the temperature control device will not interfere with the measurement accuracy of the atomic magnetometer during operation, the substrate 122 can be made of 0.25mm thick aluminum oxide, the material of the pad can be selected from silver foil thick film, and the first layer of resistance wire structure 124 and the second layer of resistance wire structure 126 can be made of thick film resistance material. Finally, in order to meet the requirements of heating efficiency and miniaturization, before the temperature control device works, the rated power of the thick-film resistance wire module can be determined by estimating the heating power consumption according to the heat flow calculation formula, and the resistance of the thick-film resistance wire module can be estimated according to the resistance law and the wiring length and thickness of the heating wire. For example, the thick-film resistance wire module can be designed with a working rated power of 10W and a resistance of 60Ω.

[0031] Optionally, the thick film resistance wire module and the target current output module both have a connection point, which is detachably connected to the thermal insulation inner shell through a plug-in interface.

[0032] The connection point may refer to a connection position for realizing a detachable connection, such as an elastic buckle, a standard interface or a PCB slot, etc. Specifically, the thick film resistance wire module and the target current output module are both independently detachable plug-in modules, and a guide rail and a limit structure are arranged inside the thermal insulation inner shell, so that the thick film resistance wire module and the target current output module can be accurately aligned and connected when plugged in, so that the user can replace the module in time when a module fails, thereby reducing the downtime and maintenance costs caused by the failure.

[0033] In the above embodiment, a temperature control device for an atomic magnetometer is proposed, wherein the target current output module can provide a stable current for the thick film resistance wire module, and the thick film resistance wire module can achieve a uniform and efficient heating effect at the end of the atomic magnetometer probe through its unique double-layer resistance wire structure design. In addition, the temperature control device highly integrates the target current output module, the thick film resistance wire module and the insulation structure, realizing the integration of heating and insulation functions without taking up too much space, and meeting the requirements of miniaturization of precision measuring equipment such as atomic magnetometers. Thus, miniaturization is achieved through a compact structural design, making the temperature control device for an atomic magnetometer more portable, easy to carry and install, and further improving its flexibility and convenience in practical applications.

[0034] In some embodiments, see Figure 2a The temperature control device 100 also includes a temperature sensor 210 .

[0035] For example, the temperature sensor 210 can be a thermistor with a resistance of 10 kΩ and a model of B3950. Specifically, in order to improve the reliability and accuracy of the temperature control device, the temperature sensor 210 is disposed in the heat-insulating inner shell 130, and the temperature sensor 210 is close to the side surface of the probe 160. Please refer to Figure 2b A temperature sensor 210 is placed at the atomic magnetometer probe 160, and the temperature sensor 210 is used to detect the real-time temperature at the atomic magnetometer probe 160. Similarly, due to the requirement of non-magnetism, the probe part of the temperature sensor 210 can be made of epoxy resin material to avoid interference from additional magnetic materials.

[0036] Optionally, the temperature sensor can also be designed to be redundant, that is, multiple temperature sensors can be arranged at the probe. The target current output module can fuse the data of multiple temperature sensors through a redundant algorithm. When one of the temperature sensors fails, it can be processed immediately and switched to other sensors to ensure that accurate temperature data can still be provided, thereby improving the reliability and safety of the temperature control device.

[0037] In the above embodiment, by setting the temperature sensor 210 in the heat-insulating inner shell 130 close to the side surface of the probe 160, accurate real-time monitoring of the temperature at the atomic magnetometer probe is achieved. In addition, the probe part of the temperature sensor 210 can also be made of epoxy resin material to avoid interference from additional magnetic materials, thereby effectively improving the reliability and accuracy of the temperature control device and ensuring the stable performance of its temperature control function under specific environments.

[0038] In some embodiments, see Figure 3 , the substrate 122 is divided into a middle area 310 and a peripheral area 320 .

[0039] The middle region 310 may refer to the central portion of the substrate 122, and the peripheral region 320 may refer to the edge portion of the substrate 122. Specifically, the substrate 122 may be divided into the middle region 310 and the peripheral region 320 in a centrally symmetrical manner. For example, the size of the substrate 122 may be determined first according to the gas chamber size, the light transmission position, or the probe size of the atomic magnetometer, and then the central portion of the substrate 122 may be further designed as the middle region 310, and the edge portion of the substrate may be designed as the peripheral region 320.

[0040] It should be understood that, since the thick film resistance wire module 120 of the temperature control device is located at the bottom of the magnetometer probe, its structural design is not strictly limited by the light-through position, that is, it is not necessary to reserve a light-through hole in the place where the substrate 122 is divided into the middle area 310. Therefore, the first layer of resistance wire structure 124 can cover the middle area and the peripheral area of ​​the substrate 122 at the same time, and the second layer of resistance wire structure 126 can also cover the middle area and the peripheral area of ​​the substrate 122 to ensure the heating efficiency and heating uniformity of the entire thick film resistance wire module 120. Furthermore, the wiring tracks of the first layer of resistance wire structure 124 and the second layer of resistance wire structure 126 can also be serpentine or maze-shaped to increase the length of the resistance wire and improve the heating efficiency.

[0041] It is understandable that, since the design method of the double-layer wiring structure of the thick film resistance wire module 120 can ensure heating efficiency and miniaturization at the same time, the overall size of the temperature control device does not exceed 6cm*6cm*5cm, which means that the temperature control device can be applied to a variety of high-precision measurement scenarios, with good scalability, flexibility and versatility. At the same time, since the thick film resistance wire module 120 is small in size, it can also be designed to be redundant without affecting the overall size of the temperature control device. Exemplarily, a dual-heating redundant module can be designed, and the main thick film resistance wire module and the spare thick film resistance wire module are connected to the target current output module through a switching switch. When the main thick film resistance wire module fails, the target current output module can automatically switch to the spare thick film resistance wire module to ensure the continuity of temperature control, thereby significantly improving the reliability and safety of the temperature control device.

[0042] In the above embodiment, most of the surface of the substrate 122 is covered by the resistance wire structure, ensuring that the heat can be evenly distributed over the entire surface, thereby avoiding the occurrence of local overheating or cold areas. At the same time, the full coverage design can also improve the heating efficiency, because the heat can be evenly transferred over the entire surface, making the heating process more efficient. In addition, this double-layer wiring design has a simple structure and a small heat capacity, so that it can quickly respond to various complex working environments including low-temperature environments, improving overall performance.

[0043] In some embodiments, a first resistance wire loop is arranged in the middle area 310 of the thick film resistance wire module 120, and a second resistance wire loop is arranged in the peripheral area 320. A first temperature sensor close to the first resistance wire loop and a second temperature sensor close to the second resistance wire loop are arranged in the heat-insulating inner shell 130.

[0044] Specifically, in order to further ensure the uniformity of heating, the thick film resistance wire module 120 can be zoned for temperature control. Exemplarily, the middle area 310 and the peripheral area 320 of the thick film resistance wire module 120 can be divided into independent temperature control areas, such as the middle area 310 corresponds to the first resistance wire loop, and the peripheral area 320 corresponds to the second resistance wire loop. The target current output module can have multiple output terminals, which are respectively connected to the first resistance wire loop corresponding to the middle area 310 and the second resistance wire loop corresponding to the peripheral area 320, providing different working currents for the two, and based on the first temperature sensor and the second temperature sensor, real-time acquisition of temperature data of the resistance wire corresponding to different areas, accurate temperature control adjustment is performed to form a zoned closed-loop temperature control system.

[0045] In the above embodiment, the thick film resistance wire module is divided into a middle area and a peripheral area with different resistance wire loops, and temperature sensors are respectively arranged near these two loops in the thermal insulation inner shell, and then the multiple output ends of the target current output module are used to provide corresponding working currents for different loops, thereby realizing differentiated temperature control, effectively ensuring heating uniformity, and significantly improving the measurement accuracy of the atomic magnetometer.

[0046] In some implementations, please continue to refer to 3, a first pad 302 and a second pad 304 which are stacked in sequence are disposed on the substrate 122.

[0047] The first pad 302 and the second pad 304 may both refer to conductive connection points disposed on the substrate 122 .

[0048] Specifically, the projections of the first pad 302 and the second pad 304 on the substrate 122 do not overlap each other, and the first pad 302 is connected to the first end of the first layer resistance wire structure 124, which can ensure that the target current can be smoothly transferred from the signal output positive end of the target current output module to the first layer resistance wire structure 124. Similarly, the second pad 304 is connected to the second end of the second layer resistance wire structure 126, which can ensure that the target current can flow back from the second layer resistance wire structure 126 to the signal output negative end of the target current output module.

[0049] It can be understood that since the projections of the first layer resistance wire structure 124 and the second layer resistance wire structure 126 on the substrate 122 overlap each other, during the operation of the temperature control device 100, the thick film resistance wire module 120 can be regarded as an external load with a heating function, connected to the signal output end of the target current output module, so that the target current can start from the signal output positive end of the target current output module, pass to the first end of the first layer resistance wire structure 124 through the first pad 302, and follow the serpentine wiring track to go through the first layer resistance wire structure 124 to the second end of the first layer resistance wire structure 124, pass through the in-situ via at the second end of the first layer resistance wire structure 124, pass through the first end of the second layer resistance wire structure 126, traverse the second layer resistance wire structure 126 in the opposite direction according to the same track, and finally return to the signal output negative end of the target current output module through the second pad 304.

[0050] In the above embodiment, the temperature control device 100 realizes effective connection and current transmission of the thick film resistance wire module 120 by arranging the first and second pads 302 and 304 stacked in sequence on the substrate 122. This not only helps to optimize the current distribution and reduce electromagnetic interference, but also ensures that the target current can flow through the first layer resistance wire structure 124 and the second layer resistance wire structure 126 in sequence, so that during operation, the atomic magnetometer probe can be uniformly heated, the heating efficiency is improved, and the measurement accuracy of such high-precision equipment is improved.

[0051] In some embodiments, see Figure 4 , the target current output module 110 includes a main control unit 410 and an inverter circuit 420 .

[0052] Among them, the main control unit 410 can refer to the core control part of the target current output module 110, which can generate and output control signals to adjust the output of the inverter circuit 420. Specifically, the output end of the main control unit 410 is connected to the input end of the inverter circuit 420, and the output end of the inverter circuit 420 is connected to the thick film resistor module 120. Further, the main control unit 410 is configured to provide a DC voltage signal to the inverter circuit 420 to control the output of the inverter circuit 420. Exemplarily, the main control unit can include a microcontroller, such as an STM32 series single-chip chip, or a chip-level temperature controller TEC103 supporting a thermistor temperature sensor can be directly used as the main control unit, which has a built-in control chip and a PID module, and can support the screen display control module (computer) communication setting parameters, that is, it can be connected to the host computer in real time through the TX and RX serial ports to display the real-time collected temperature value, and allow the user to adjust the setting value of the main control unit.

[0053] The inverter circuit 420 may refer to a circuit in the target current output module 110 that converts direct current into alternating current, and the direct current may be segmented and converted into an alternating voltage waveform by the on-off operation of the switch element. The frequency and amplitude of the output waveform are then controlled by modulation to be close to a sine wave or other target waveform. Specifically, the inverter circuit 420 is configured to generate a target AC signal that meets a preset condition based on a DC voltage signal. Exemplarily, the inverter circuit 420 may adopt a full-bridge inverter topology structure, and realize the conversion of DC to AC by controlling the on and off of a power switch device (such as a MOSFET or an IGBT). That is, the inverter circuit 420 may accurately control the drive circuit to send a corresponding control signal based on the DC voltage signal output by the main control unit 410, and enable the corresponding power switch device to be turned on and off, thereby generating a three-phase AC or a single-phase AC with a phase difference of 120° at the signal output end.

[0054] For example, TEC103 is used as the main control unit for explanation. First, based on the heating requirements, the target temperature is set for the temperature control device. That is, TEC103 communicates with the screen display control module through the TX and RX serial ports, and sets the target temperature of the atomic magnetometer according to the upper computer software or program; then based on the temperature sensor 210 (which can be a thermistor) placed at the atomic magnetometer probe 160, the current ambient temperature is collected in real time. Further, the main control unit 410 collects the current ambient temperature according to the temperature sensor 210 and compares it with the preset target temperature. If the target temperature is higher than the current ambient temperature, the main control unit 410 will output a DC voltage signal (also known as a feedback voltage value), thereby controlling the inverter circuit 420 to generate a target AC signal to drive the thick film resistance wire module 120 to generate corresponding heat, so that the gas chamber temperature of the atomic magnetometer reaches the target temperature that meets the heating requirements. It should be understood that the magnitude of the output feedback voltage value is determined by the parameters set by the PID and the difference between the current ambient temperature and the target temperature. Finally, the DC voltage signal (feedback voltage value) will be used as the input of the inverter circuit 420 to control the output of the inverter circuit 420 .

[0055] Optionally, the main control unit 410 may also include a fault detection module for real-time monitoring of the working status of the entire temperature control device. When a fault is detected in one of the modules, an alarm signal can be immediately sent to the host computer, and protective measures can be taken in real time, such as switching the main and standby modules, or stopping heating, etc., to ensure the reliability and safety of the temperature control device and meet the needs of more application scenarios.

[0056] In the above embodiment, the main control unit 410 and the inverter circuit 420 work together to achieve precise control and efficient heating of the thick film resistance wire module 120. The main control unit 410 can generate a control signal to adjust the output of the inverter circuit 420, and the inverter circuit 420 can adopt a full-bridge inverter topology structure, based on the DC voltage signal output by the main control unit 410, to accurately control the on and off of the power switch device, and generate a target AC signal that meets the preset conditions to drive the thick film resistance wire module 120 to generate corresponding heat, meet the heating requirements of the atomic magnetometer, and make the gas chamber temperature reach the target temperature, thereby effectively ensuring the accuracy, stability and intelligence level of the temperature control device for the temperature control of the atomic magnetometer, and improving the performance and reliability of the overall system.

[0057] In some embodiments, see Figure 5 The inverter circuit 420 includes a pulse signal generating circuit 510 , a signal isolation and shifting circuit 520 and an H-bridge circuit 530 .

[0058] Specifically, the input end of the pulse signal generating circuit 510 is connected to the output end of the main control unit 410, and the output end of the pulse signal generating circuit 510 is connected to the input end of the signal isolation and displacement circuit 520, and the output end 520 of the signal isolation and displacement circuit is connected to the H-bridge circuit 530. The input end of the H-bridge circuit 530 is also connected to the output end of the main control unit 410, and the signal output positive end of the H-bridge circuit 530 serves as the signal output positive end of the target current output module 110, and the signal output negative end of the H-bridge circuit 530 serves as the signal output negative end of the target current output module 110.

[0059] The pulse signal generating circuit 510 may refer to a circuit component that converts a DC voltage signal into a series of pulse width modulation (PWM) signals. Specifically, the pulse signal generating circuit 510 is configured to receive a DC voltage signal provided by the main control unit 410, and generate a pulse width modulation signal based on the DC voltage signal. The width and frequency of these PWM signals can be adjusted based on different application environments, thereby achieving precise control of the output of the inverter circuit 420.

[0060] Optionally, the pulse signal generating circuit 510 can also generate a pulse width modulation signal based on the oscillator and comparator contained therein. Exemplarily, the main chip of the pulse signal generating circuit 510 can adopt a pulse width modulation (PWM) control chip SG3525, which has oscillation, PWM generation and drive output functions. Its built-in internal oscillator and comparator can set the oscillator frequency through external resistors and capacitors, generate a sawtooth wave signal, and compare the sawtooth wave signal with the output signal of the error amplifier in the comparator. Finally, the two output terminals OUTA and OUTB of the pulse width modulation control chip SG3525 can respectively output two complementary PWM signals to drive the conduction and shutdown of the two groups of bridge arms in the H-bridge circuit 530. Among them, the internal oscillator of the pulse signal generating circuit 510 generates a reference frequency, which can be connected through an external oscillation resistor R T and external oscillation capacitor The working frequency can be calculated as follows: In the formula, Represents the external oscillation capacitor, whose capacitance range is 0.001-0.1μF; R T Represents the external oscillation resistor, whose resistance range is 2-150kΩ; R D Indicates the external discharge resistor, whose resistance range is 0-500Ω.

[0061] Finally, after calculation using the above formula, the oscillator can output a sawtooth wave signal of 0.6V-3.5V, which is used as a reference signal for PWM modulation to generate the final pulse width modulation signal.

[0062] Optionally, undervoltage lockout and overload protection functions may also be provided in the pulse signal generating circuit 510, that is, when the output is compared with a set protection voltage, the high-level output PWM signal function is disabled to implement fault protection and ensure safe operation of the system.

[0063] The signal isolation and level shifting circuit 520 is configured to perform signal isolation and level shifting on the PWM signal to generate a target PWM signal.

[0064] It should be understood that since the H-bridge circuit 530 has a low-end switch (lower bridge arm) that can be driven by only a low voltage and a high-end switch (upper bridge arm) that can be driven by a high voltage, and the source voltage of the high-end switch is close to the power supply voltage when it is turned on, in actual application, the pulse width modulation signal output by the pulse signal generating circuit 510 may not be able to directly drive the H-bridge circuit 530 to work normally. Therefore, it is necessary to perform secondary processing on the pulse width modulation signal through the signal isolation and displacement circuit 520 to meet the driving requirements of the H-bridge circuit.

[0065] Specifically, the signal isolation and displacement circuit 520 can isolate and level-shift the PWM signal to ensure the stability and compatibility of the signal. Among them, signal isolation ensures the electrical safety between the control signal and the power circuit, effectively preventing the potential interference and damage of high voltage or strong current to the control circuit, while level shifting adjusts the voltage level of the signal to an appropriate range to ensure that the signal can accurately drive the power switch device in the H-bridge circuit. Exemplarily, the main chip of the signal isolation and displacement circuit 520 can adopt a high-low side MOSFET driver chip EG2132, which can amplify the input pulse width modulation signal and drive the high and low bridge switch devices of the H-bridge circuit.

[0066] The H-bridge circuit 530 may refer to a topological structure in an electronic circuit, which is composed of four power switching devices. Through the four power switching devices, the H-bridge circuit 530 can convert a DC voltage signal into a target AC signal under the control of a target pulse width modulation signal. That is, based on the DC voltage signal output by the main control unit 410, the H-bridge circuit 530 can convert the DC voltage signal into a target AC signal under the control of four target pulse width modulation signals modulated by the signal isolation and displacement circuit 520, so that the load (thick film resistor wire module 120) at the signal output end of the target current output module 110 obtains an alternating voltage at both ends, and finally forms an AC output.

[0067] Exemplarily, the power switch devices constituting the H-bridge circuit may be MOSFET (field effect transistor) or IGBT (insulated gate bipolar transistor). Taking N-channel field effect transistor (MOSFET) as an example, if the four MOSFETs are marked as Q1, Q2, Q3 and Q4 in the order of upper left, lower left, upper right and lower right, two pairs of bridge arms can be formed, upper bridge arms Q1 and Q3, and lower bridge arms Q2 and Q4. And the four MOSFETs are connected in a bridge manner, that is, the positive pole of the power supply is connected to the source of Q1 and Q3, the negative pole of the power supply is connected to the source of Q2 and Q4, the node between Q1 and Q2 is used as the positive terminal of the signal output, and the node signal between Q3 and Q4 is used as the negative terminal of the output. When working, Q1 and Q4, Q2 and Q3 form diagonal lines respectively. By controlling the conduction and shutdown of the switch devices on these diagonal lines, the purpose of controlling the alternating positive and negative changes of the voltage at both ends of the load can be achieved.

[0068] Specifically, it can be divided into two states: State 1 is that Q1 and Q4 are turned on, and Q2 and Q3 are turned off. The current flows from the positive pole of the power supply through Q1, and is output to the load (thick film resistance wire module 120) through the positive end of the signal output. Then it flows back to Q4 through the negative end of the signal output and finally flows into the negative pole of the power supply. At this time, the voltage across the load is positive, forming a positive half-wave. State 2 is that Q2 and Q3 are turned on, and Q1 and Q4 are turned off. The current flows from the positive pole of the power supply through Q3, and is output to the load (thick film resistance wire module 120) through the negative end of the signal output. Then it flows back to Q2 through the positive end of the signal output and finally flows into the negative pole of the power supply. At this time, the voltage across the load is negative, forming a negative half-wave. Finally, the H-bridge circuit 530 can quickly switch the above two states, efficiently and stably converting direct current into high-quality alternating current.

[0069] In the above embodiment, the inverter circuit 420 realizes the function of accurately converting the DC voltage signal into the target AC signal through the coordinated work of the pulse signal generating circuit 510, the signal isolation and displacement circuit 520 and the H-bridge circuit 530. Specifically, the pulse signal generating circuit 510 generates a PWM signal with adjustable width and frequency to meet the needs of different application environments, and ensures the stability and compatibility of the signal through the signal isolation and displacement circuit 520, thereby driving the H-bridge circuit 530 to convert the DC voltage into an AC signal, and finally the load of the target current output module 110 obtains an alternating voltage to form an AC output. This design not only improves the flexibility and adaptability of the system, ensures the reliability of signal transmission and the high efficiency of power conversion, but can also be applied to fields such as uninterruptible power supply (UPS) or new energy inverter.

[0070] In some embodiments, the pulse width modulation signal includes a first pulse width modulation signal and a second pulse width modulation signal. Figure 6 , the pulse signal generating circuit 510 includes a dead time control unit 610 .

[0071] It should be understood that in an H-bridge circuit, the high-side switch (upper bridge arm) and the low-side switch (lower bridge arm) cannot be turned on at the same time, otherwise it will cause a short circuit in the power supply. Therefore, it is necessary to insert a short time interval in the switching process, which is called the dead time. During this period of time, the switch devices of the upper bridge arm and the lower bridge arm will not be turned on to prevent the direct conduction (simultaneous turning on of the high-side and low-side switches) caused by the delay of the switch devices during the switching process, thereby causing a short circuit or electrical failure. The dead time control unit 610 may refer to a circuit or functional module for inserting a dead time in the process of generating a pulse width modulation (PWM) signal, which can ensure that after one switch device is turned off, another switch device starts to turn on.

[0072] Exemplarily, if the first pulse width modulation signal in the pulse width modulation signal is a control signal for turning on the switching device of the upper bridge arm in the H-bridge circuit, and the second pulse width modulation signal is a control signal for turning on the switching device of the lower bridge arm in the H-bridge circuit, then specifically, the dead time control unit 610 is configured to insert a dead time period that satisfies a preset time condition between the first pulse width modulation signal and the second pulse width modulation signal.

[0073] Furthermore, the dead time control unit 610 may include a discharge resistor potentiometer, that is, an external discharge resistor potentiometer, forming a discharge loop, and the discharge time of the potentiometer can be regarded as the dead time. Specifically, the dead time can be calculated by the following formula: In the formula, Represents the dead time, which is the time interval set between the conduction of the two sets of switching devices of the upper bridge arm and the lower bridge arm; is the resistance of the discharge resistor potentiometer; Is the discharge resistor potentiometer The capacitance of the capacitors that together form the discharge circuit.

[0074] It can be seen from the above formula that by adjusting the discharge resistor potentiometer The resistance value of the potentiometer can control the dead time of the output pulse width modulation signal. Specifically, when the resistance value of the potentiometer increases, the discharge time becomes longer and the dead time increases; when the resistance value of the potentiometer decreases, the discharge time becomes shorter and the dead time decreases.

[0075] In the above implementation, by inserting the dead time in the pulse width modulation signal, it is ensured that the upper bridge arm and the lower bridge arm in the H-bridge circuit will not be turned on at the same time, thereby effectively preventing power short circuit and electrical failure. In addition, by adjusting the resistance value of the discharge resistor potentiometer, the length of the dead time can also be flexibly controlled to adapt to different application requirements and switch device characteristics. This design not only improves the safety and reliability of the system, but also optimizes the performance and efficiency of the circuit.

[0076] In some implementations, the H-bridge circuit 530 includes an upper bridge arm and a lower bridge arm. The signal isolation and shifting circuit 520 includes a bootstrap unit 620 .

[0077] Similarly, the power switching device used in the H-bridge circuit 530 is an N-channel field effect transistor (MOSFET) as an example for explanation. When driving the lower bridge arm to turn on, the signal isolation and displacement circuit 520 can directly convert the pulse width modulation signal into a target pulse width modulation signal that can drive the gate of the MOSFET without additional level boosting. However, when driving the upper bridge arm to turn on, since the source voltage of the upper bridge arm MOSFET will be close to the power supply voltage when it is turned on, the low level signal level of the pulse width modulation signal cannot directly drive the upper bridge arm MOSFET to turn on, so the bootstrap unit 620 in the signal isolation and displacement circuit 520 is required to perform bootstrap boost processing on it.

[0078] The bootstrap unit 620 is configured to provide a driving signal to the upper bridge arm. Specifically, the bootstrap unit 620 may include a bootstrap diode and a bootstrap capacitor. When the lower bridge arm switch device is turned on, the power supply voltage (VCC) is charged to the bootstrap capacitor through the bootstrap diode. When the upper bridge arm switch device needs to be turned on, the voltage on the bootstrap capacitor can be used as the power supply of the internal driver to provide the necessary driving voltage to ensure that the upper bridge arm switch device can be turned on normally.

[0079] In the above implementation, the bootstrap unit provides the necessary driving voltage for the upper bridge arm in the H-bridge circuit, effectively avoiding the influence of power supply voltage fluctuations and ensuring that the upper bridge arm can be normally turned on. At the same time, with the simplified circuit design of capacitors and diodes, the bootstrap unit can achieve fast response, thereby improving circuit efficiency, thereby achieving stable operation and high-efficiency performance of the H-bridge circuit.

[0080] In some implementations, the target current output module includes a constant current unit and a resistance detection unit.

[0081] Among them, the constant current unit may refer to an electronic circuit module that provides a stable constant current output. Specifically, the positive end of the constant current source output is used as the signal output positive end of the target current output module, and the negative end of the constant current source output is used as the signal output negative end of the target current output module, which can reduce power supply noise and high-frequency noise, and further improve the stability of the output current. The resistance detection unit may refer to an electronic circuit module for detecting the impedance change of the resistance element in the device. Specifically, the resistance detection unit is connected to the two ends of the thick film resistance wire module, and based on Ohm's law, a known voltage is applied to the two ends of the thick film resistance wire module to measure the voltage drop, and finally the voltage signal is converted into a digital signal to calculate the resistance value.

[0082] Exemplarily, the constant current unit may include high-precision operational amplifiers, field effect transistors (MOSFETs), voltage regulator diodes, resistors and other components to achieve precise control of the output current through a negative feedback mechanism. Specifically, a low-noise linear regulator (LDO) is provided at the power pin of the operational amplifier to reduce the influence of power supply noise on the constant current source. A low-noise capacitor is connected in parallel in the feedback loop of the operational amplifier to suppress high-frequency noise. A low-pass filter capacitor is also connected in parallel at both ends of the sampling resistor to further filter out the noise in the current sampling signal. Optionally, a π-type filter circuit is also included between the output end of the constant current source and the thick film resistor module, which is composed of a two-stage filter capacitor and a first-stage filter inductor to further filter out high-frequency noise and current ripples, ensure the stability of the output current, and ultimately provide a high-precision, high-stability constant current output for the thick film resistor module. The resistance detection unit connected at both ends of the thick film resistor module can monitor the change of the resistance value in real time, and promptly detect faults or abnormal conditions in the circuit, such as aging, breakage or poor contact of the resistor wire. Furthermore, the resistance detection unit can monitor the resistance value changes of the thick film resistance wire module in real time. The main control unit can adjust the output current of the constant current unit according to the resistance value data provided by the resistance detection unit, so that its output is a stable current with reduced power supply noise and high-frequency noise, and ultimately achieve precise control of the thick film resistance wire module.

[0083] In the above implementation, in the target current output module, the close cooperation between the constant current unit and the resistance detection unit realizes the precise control and real-time monitoring of the thick film resistance wire module. This cooperation not only improves the stability and reliability of the system, but also improves the measurement accuracy. At the same time, both the constant current unit and the resistance detection unit can adopt high-precision, highly integrated components and processors, which ensures the miniaturization and high integration of the temperature control device on the basis of ensuring the working performance of the temperature control device.

[0084] It should be understood that a temperature control device for an atomic magnetometer in the present embodiment is presented in the form of a functional unit, where the unit refers to an ASIC (Application Specific Integrated Circuit) circuit, a processor and memory that executes one or more software or fixed programs, and / or other devices that can provide the above functions. Each module in the above-mentioned temperature control device for an atomic magnetometer can be implemented in whole or in part through software, hardware, and a combination thereof. The above-mentioned modules can be embedded in or independent of a processor in a computer device in the form of hardware, or can be stored in a memory in a computer device in the form of software, so that the processor can call and execute operations corresponding to the above-mentioned modules.

[0085] This embodiment also provides a temperature control system for an atomic magnetometer, and the temperature control system for an atomic magnetometer includes the contents of any of the above-mentioned temperature control devices.

[0086] For the specific definition of a temperature control system method for an atomic magnetometer, please refer to the definition of a temperature control device for an atomic magnetometer mentioned above, which will not be repeated here. It should be understood that although the various steps in the above flowchart are displayed in sequence as indicated by the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise clearly stated in this article, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, at least part of the steps in the above flowchart may include multiple steps or multiple stages, and these steps or stages are not necessarily executed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be executed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0087] In some embodiments, the temperature control system further includes a host computer communicatively connected to the temperature control device.

[0088] Specifically, the host computer can be used to send a startup instruction to the temperature control device when the atomic magnetometer is in an environment below a preset temperature, so as to pre-start the temperature control device and put the temperature control device into a working state. For example, at minus 30 degrees Celsius, the atomic magnetometer may not work properly due to the low temperature. At this time, the temperature control module can be pre-started, and the temperature control device can be further controlled by the host computer to increase the ambient temperature of the atomic magnetometer to a temperature range in which it can work, so as to achieve thermal balance with the ambient temperature, thereby ensuring that the atomic magnetometer can still operate normally in a low temperature environment.

[0089] Optionally, a control method based on fuzzy logic can also be used on the host computer side to adaptively adjust the heating power of the temperature control device according to the temperature deviation and the rate of change of the deviation to achieve precise control of the temperature. Specifically, the temperature deviation (e) and the rate of change of the deviation (Δe) can be converted into fuzzy sets, such as "negative large", "negative small", "zero", "positive small" or "positive large". Then a fuzzy rule base is established, which can be "if e is positive and large and Δe is positive and large, the heating power is reduced". Further, reasoning is performed based on the fuzzy rule base to obtain the adjustment amount of the heating power. Finally, the result of the fuzzy reasoning is converted into a specific heating power value and sent to the main control unit of the temperature control device through the serial port to control the output of the inverter circuit.

[0090] In the above implementation, the host computer that is connected to the temperature control device in communication achieves effective protection and precise control of the atomic magnetometer in a low temperature environment. When the ambient temperature is lower than the preset value, the host computer can send a start instruction in time to start the temperature control device in advance, thereby raising the ambient temperature around the atomic magnetometer to a suitable working range, effectively avoiding the impact of temperature fluctuations on the atomic magnetometer, and ensuring its stable operation and high efficiency in a low temperature environment. At the same time, a variety of control methods can be used to achieve precise control of temperature, thereby improving the response speed and control accuracy of the system.

[0091] The temperature control device and temperature control system for an atomic magnetometer described in the above embodiments can be implemented by a computer chip or entity, or by a product with a certain function. A typical implementation device is a computer. Specifically, the computer can be, for example, a personal computer, a laptop computer, a cellular phone, a camera phone, a smart phone, a personal digital assistant, a media player, a navigation device, an email device, a game console, a tablet computer, a wearable device, or a combination of any of these devices.

[0092] For the convenience of description, the above device is described in various units according to their functions. Of course, when implementing the present application, the functions of each unit can be implemented in the same or multiple software and / or hardware.

[0093] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0094] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1These computer program instructions can also be stored in a computer-readable memory that can guide a computer or other programmable data processing device to work in a specific way, so that the instructions stored in the computer-readable memory produce a product including an instruction device, which implements the functions specified in the process. Figure 1 A process or multiple processes and / or boxes Figure 1 These computer program instructions can also be loaded onto a computer or other programmable data processing device, so that a series of operation steps are executed on the computer or other programmable device to produce a computer-implemented process, so that the instructions executed on the computer or other programmable device provide for implementing the process in the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0095] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0096] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0097] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0098] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. Since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0099] The above is only an embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

[0100] Although the embodiments of the present application are described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present application, and such modifications and variations are all within the scope defined by the appended claims.

Claims

1. A temperature control device for an atomic magnetometer, characterized in that: The temperature control device comprises a target current output module, a thick film resistance wire module, a heat-insulating outer shell and a heat-insulating inner shell; the target current output module is arranged outside the heat-insulating outer shell; the heat-insulating inner shell is arranged inside the heat-insulating outer shell, and a heat-insulating material is filled between the heat-insulating outer shell and the heat-insulating inner shell; the thick film resistance wire module is arranged inside the heat-insulating inner shell, and when the probe of the atomic magnetometer is extended into the heat-insulating inner shell, the thick film resistance wire module is located at the end of the probe; wherein: The signal output positive terminal of the target current output module is connected to the first terminal of the thick film resistance wire module, and the signal output negative terminal of the target current output module is connected to the second terminal of the thick film resistance wire module; The thick film resistance wire module comprises a substrate, a first layer resistance wire structure and a second layer resistance wire structure sequentially stacked on the substrate, a first end of the first layer resistance wire structure is connected to a first end of the thick film resistance wire module, a second end of the first layer resistance wire structure is connected to a first end of the second layer resistance wire structure, and a second end of the second layer resistance wire structure is connected to a second end of the thick film resistance wire module; The projections of the first layer of resistance wire structure and the second layer of resistance wire structure on the substrate overlap with each other.

2. The temperature control device according to claim 1, characterized in that: The temperature control device further comprises a temperature sensor, which is arranged in the heat-insulating inner shell and is close to the side surface of the probe.

3. The temperature control device according to claim 1, characterized in that: The substrate is divided into a middle area and a peripheral area; The first layer of resistance wire structure covers the middle area and the peripheral area of ​​the substrate; The second layer of resistance wire structure covers the middle area and the peripheral area of ​​the substrate.

4. The temperature control device according to claim 1, characterized in that: The substrate is provided with a first pad and a second pad stacked in sequence; the projections of the first pad and the second pad on the substrate do not overlap each other; The first pad is connected to the first end of the first layer of resistance wire structure; The second pad is connected to the second end of the second layer resistance wire structure.

5. The temperature control device according to any one of claims 1 to 4, characterized in that: The target current output module includes a main control unit and an inverter circuit; The output end of the main control unit is connected to the input end of the inverter circuit, and the output end of the inverter circuit is connected to the thick film resistance wire module; The main control unit is configured to provide a DC voltage signal to the inverter circuit to control the output of the inverter circuit; The inverter circuit is configured to generate a target AC signal that meets a preset condition based on the DC voltage signal.

6. The temperature control device according to claim 5, characterized in that: The inverter circuit includes a pulse signal generating circuit, a signal isolation and displacement circuit and an H-bridge circuit; The input end of the pulse signal generating circuit is connected to the output end of the main control unit, and the output end of the pulse signal generating circuit is connected to the input end of the signal isolation and shifting circuit; The output end of the signal isolation and shift circuit is connected to the H-bridge circuit; The input end of the H-bridge circuit is also connected to the output end of the main control unit, and the signal output positive end of the H-bridge circuit serves as the signal output positive end of the target current output module, and the signal output negative end of the H-bridge circuit serves as the signal output negative end of the target current output module; The pulse signal generating circuit is configured to receive a DC voltage signal provided by the main control unit and generate a pulse width modulation signal based on the DC voltage signal; The signal isolation and shifting circuit is configured to perform signal isolation and level shifting on the pulse width modulation signal to generate a target pulse width modulation signal; The H-bridge circuit is configured to convert the DC voltage signal into the target AC signal under the control of the target pulse width modulation signal.

7. The temperature control device according to claim 6, characterized in that: The pulse width modulation signal includes a first pulse width modulation signal and a second pulse width modulation signal; the pulse signal generating circuit includes a dead time control unit; The dead time control unit is configured to insert a dead time period satisfying a preset time condition between the first pulse width modulation signal and the second pulse width modulation signal.

8. The temperature control device according to claim 6, characterized in that: The H-bridge circuit includes an upper bridge arm and a lower bridge arm; the signal isolation and displacement circuit includes a bootstrap unit; The bootstrap unit is configured to provide a driving signal to the upper bridge arm.

9. A temperature control system for an atomic magnetometer, characterized in that: The temperature control device comprises any one of claims 1 to 8.

10. The temperature control system according to claim 9, characterized in that: The temperature control system includes a host computer that is communicatively connected to the temperature control device; The host computer is used to send a start instruction to the temperature control device when the atomic magnetometer is in an environment lower than a preset temperature, so as to start the temperature control device in advance and put the temperature control device into a working state.

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