Chip resistor

Abstract

A chip resistor includes a substrate, first to fourth electrodes, a resistive layer, a resin electrode layer, first and second insulating protective layers, and first and second external electrode layers. The front surface of the substrate includes opposite first and second edge regions. The first electrode and the second electrode are arranged on part of the first edge area and part of the second edge area respectively. The resistive layer extends from the first electrode to the second electrode. The first insulating protective layer completely covers the resistive layer. The resin electrode layer comprises a first portion, a second portion and a third portion which respectively cover the first electrode, the second electrode and the first insulation protection layer on the resistance layer. The second insulating protection layer completely covers the third part and partially covers the first part and the second part. The third electrode and the fourth electrode are arranged on the back surface of the substrate. The first and second external electrode layers are connected to the first and third electrodes, and the second and fourth electrodes, respectively. The resin electrode layer protects the first electrode and the second electrode from being influenced by environmental moisture and sulfur gas, can be used for electroplating connection of external electrodes, and is beneficial to heat dissipation and metallic water resistance of the chip resistor.

Description

Technical Field

[0001] The present disclosure relates to a passive component, and more particularly to a chip resistor. Background Art

[0002] Traditional chip resistors mainly include a pair of electrodes and a resistor layer spanning between the pair of electrodes. Traditional chip resistors use laser cutting or photolithography to change the current path of the resistor layer. According to Ohm's law of resistance, the longer the current path, the greater the resistance. At present, if the resistor material is the same, there are generally two ways to increase the resistance of the chip resistor. The first way is to reduce the thickness of the resistor layer, and the second way is to increase the number of laser cutting or use photolithography to increase the winding pattern of the resistor layer.

[0003] If the resistance value of the chip resistor is increased by reducing the thickness of the resistor layer, the resistor layer may be too thin, resulting in a decrease in the product's power tolerance and weather resistance. In this way, the chip resistor is prone to failure due to electrostatic discharge (ESD) or damage due to voltage surges.

[0004] If the winding pattern of the resistor layer is increased, the thickness of the resistor layer must be increased first, and then the winding pattern of the resistor layer must be made by laser or etching. In addition, increasing the number of cuts will make the spacing between the lines of the winding pattern of the resistor layer too close, for example, the line width is <7μm. At this time, the thermal effect of laser processing will affect the resistor layer itself, and then affect the stability of the chip resistor for electrical performance. If photolithography and etching processes are used, it is difficult to etch fine line widths, and the cost is much higher than laser.

[0005] In addition, the chip resistor has the specifications of rated power and maximum operating voltage in the specification sheet. This specification is that when the product resistance is greater than a certain resistance, the product specification only applies to the maximum operating voltage instead of the rated power. To increase the withstand voltage of the product under the same rated power, it is necessary to increase the current path of the resistor layer, that is, more resistor layers with curved circuit patterns are needed to reduce the potential on the resistor layer circuit, thereby reducing the voltage difference per unit length. However, according to Ohm's law, increasing the current path of the resistor layer will shorten the cross-sectional area of ​​the current path of the resistor layer, resulting in a decrease in the power stability of the product. Summary of the invention

[0006] Therefore, one object of the present disclosure is to provide a chip resistor, which reduces the first electrode and the second electrode on the front side of the substrate to increase the area of ​​the resistor layer covering the front side of the substrate. Thereby, the resistor layer has more space to design more bending curves, thereby increasing the resistance value of the resistor and reducing the voltage difference per unit length of the resistor.

[0007] Another object of the present disclosure is to provide a chip resistor, wherein the first and second portions of the resin electrode layer can protect the first and second electrodes inside from the influence of environmental moisture and sulfur gas, and can be used for external electrode electroplating connection. The third portion is arranged above the resistor layer to help the chip resistor dissipate heat and waterproof the metal.

[0008] According to the above-mentioned purpose of the present disclosure, a chip resistor is proposed, which includes a substrate, a first electrode, a second electrode, a resistor layer, a first insulating protective layer, a resin electrode layer, a second insulating protective layer, a third electrode, a fourth electrode, a first external electrode layer, and a second external electrode layer. The substrate includes a front side and a back side. The front side includes a first edge region and a second edge region opposite to each other. The first electrode and the second electrode are respectively arranged on a part of the first edge region and a part of the second edge region. The resistor layer is arranged on the front side and extends from the first electrode to the second electrode. The first insulating protective layer completely covers the resistor layer. The resin electrode layer includes a first part, a second part, and a third part. The first part covers the first electrode and a part of the first insulating protective layer adjacent to the first electrode. The second part covers the second electrode and a part of the first insulating protective layer adjacent to the second electrode. The third part covers a part of the first insulating protective layer on the resistor layer. The first part, the second part, and the third part are separated from each other. The second insulating protective layer completely covers the third part and partially covers the first part and the second part. The third electrode and the fourth electrode are arranged on the back side and are respectively opposite to the first electrode and the second electrode. The first external electrode layer extends from the first electrode through the first side of the substrate to the third electrode. The second external electrode layer extends from the second electrode to the fourth electrode through the second side surface of the substrate.

[0009] According to an embodiment of the present disclosure, the first electrode and the second electrode each include a first section, a second section, and a third section. The first section and the second section are respectively joined at opposite ends of the third section and protrude from the third section. The third section of the first electrode and the third section of the second electrode extend along one side of the first side and one side of the second side, respectively. The first electrode has a C-shaped structure, and the second electrode has an inverted C-shaped structure.

[0010] According to an embodiment of the present disclosure, the lengths of the first segment and the second segment are greater than about 50 μm and less than about 250 μm, and the length of the third segment is greater than about 50 μm and less than about 150 μm.

[0011] According to an embodiment of the present disclosure, the first electrode and the second electrode are both rectangular structures, and the first electrode and the second electrode extend toward the second edge region and the first edge region respectively. The length of the first electrode and the second electrode are both greater than about 50 μm and less than about 250 μm, and the width is both greater than about 50 μm and less than about 200 μm.

[0012] According to an embodiment of the present disclosure, the first electrode and the second electrode are respectively located at two diagonally opposite corners of the front surface. The resistor layer has a first U-shaped groove and a second U-shaped groove that expose a portion of the first electrode and a portion of the second electrode respectively. The front end of the first electrode is separated from the inner side surface of the first U-shaped groove, and the front end of the second electrode is separated from the inner side surface of the second U-shaped groove.

[0013] According to an embodiment of the present disclosure, the distances between the first electrode and the second electrode and the adjacent long sides of the front surface are both greater than or equal to 0 μm and less than about 250 μm.

[0014] According to an embodiment of the present disclosure, the materials of the first electrode and the second electrode are copper, copper-nickel alloy, nickel-phosphorus alloy, or sintered silver paste containing silver and glass, and the materials of the third electrode and the fourth electrode are epoxy resin and silver.

[0015] According to one embodiment of the present disclosure, the material of the above-mentioned resistance layer is nickel-chromium alloy, copper-nickel alloy, nickel-chromium-silicon alloy, nickel-chromium-aluminum alloy, nickel-chromium-aluminum-silicon alloy, nickel-chromium-aluminum-yttrium alloy, nickel-chromium-tantalum-molybdenum alloy, tantalum nitride, copper-manganese-tin alloy, or copper-manganese-nickel alloy.

[0016] According to an embodiment of the present disclosure, the material of the first insulating protection layer is silicon oxide, tantalum oxide, or silicon nitride, and the material of the second insulating protection layer is epoxy resin, polyimide (PI), or resin.

[0017] According to an embodiment of the present disclosure, the materials of the resin electrode layer are epoxy resin and silver. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The following detailed description in conjunction with the accompanying drawings will provide a better understanding of the aspects of the present disclosure. It should be noted that, in accordance with standard industry practice, the features are not drawn to scale. In fact, the size of each feature may be increased or decreased at will to make the discussion clearer.

[0019] FIG. 1A to FIG. 1I The figure is a schematic diagram showing a manufacturing process of a chip resistor according to an embodiment of the present disclosure.

[0020] Figure 2 The figure is a schematic diagram showing the configuration of a first electrode, a second electrode, and a resistance layer of a chip resistor according to another embodiment of the present disclosure. DETAILED DESCRIPTION

[0021] The following is a detailed discussion of the embodiments of the present disclosure. However, it is to be understood that the embodiments provide many applicable concepts that can be implemented in a variety of specific contexts. The embodiments discussed and disclosed are for illustration only and are not intended to limit the scope of the present disclosure. All embodiments of the present disclosure disclose a variety of different features, but these features can be implemented individually or in combination as needed.

[0022] In addition, the terms “first”, “second”, etc. used in this document do not particularly refer to an order or sequence, but are only used to distinguish elements or operations described with the same technical terminology.

[0023] The spatial relationship between two elements described in the present disclosure is applicable not only to the orientations shown in the drawings, but also to orientations not shown in the drawings, such as an inverted orientation. In addition, the term "connection", "electrical connection", or the like between two components in the present disclosure is not limited to direct connection or electrical connection between the two components, but may also include indirect connection or electrical connection as required.

[0024] Please refer to FIG. 1A to FIG. 1I , which is a schematic diagram illustrating a manufacturing process of a chip resistor 100 according to an embodiment of the present disclosure. Fig. 1I As shown, the chip resistor 100 may mainly include a substrate 110, a first electrode 120, a second electrode 130, a resistor layer 140, a first insulating protective layer 150, a resin electrode layer 160, a second insulating protective layer 170, a third electrode 180, a fourth electrode 190, a first external electrode layer 200, and a second external electrode layer 210.

[0025] When manufacturing the chip resistor 100, a substrate 110 may be provided first. The substrate 110 may be a flat plate structure. For example, Figure 1A As shown, the substrate 110 may be a rectangular flat plate structure having a length L and a width W. Fig. 1I As shown, the substrate 110 has a front side 112 and a back side 114 opposite to each other, and a first side 116 and a second side 118 opposite to each other, wherein the first side 116 and the second side 118 are joined between the front side 112 and the back side 114. The front side 112 and the back side 114 can both be planes. The front side 112 of the substrate 110 includes a first edge region 112a and a second edge region 112b opposite to each other. Specifically, the first edge region 112a and the second edge region 112b are located at opposite sides of the substrate 110 along the length L direction. The first edge region 112a and the second edge region 112b are both rectangular regions. The substrate 110 can be a ceramic substrate. For example, the material of the substrate 110 can be aluminum oxide, aluminum nitride, boron nitride, silicon carbide, or a glass-containing material.

[0026] Next, if Figure 1AAs shown, the first electrode 120 and the second electrode 130 can be formed on the first edge region 112a and the second edge region 112b of the front surface 112 of the substrate 110 by printing or sputtering. The first electrode 120 and the second electrode 130 are formed only on a portion of the first edge region 112a and a portion of the second edge region 112b, respectively. That is, the area occupied by the first electrode 120 and the second electrode 130 on the front surface 112 of the substrate 110 is reduced compared to the front electrode of the conventional resistor.

[0027] For example, please also refer to Figure 1A and Fig. 1I , the first electrode 120 may include a first segment 122, a second segment 124, and a third segment 126, and the second electrode 130 may include a first segment 132, a second segment 134, and a third segment 136. The third segment 126 of the first electrode 120 extends along a side 116a of the first side surface 116, and the third segment 136 of the second electrode 130 extends along a side 118a of the second side surface 118. The first segment 122 and the second segment 124 of the first electrode 120 are respectively joined at opposite ends of the third segment 126, and protrude from the third segment 126 toward the second edge region 112b. The first segment 132 and the second segment 134 of the second electrode 130 are respectively joined at opposite ends of the third segment 136, and protrude from the third segment 136 toward the first edge region 112a. The first electrode 120 may be mirror-symmetrical to the second electrode 130. For example, the first electrode 120 is in a C-shaped structure, and the second electrode 130 is in an inverted C-shaped structure.

[0028] like Figure 1A As shown, the first segment 122 and the second segment 124 of the first electrode 120, and the first segment 132 and the second segment 134 of the second electrode 130 have a length L1, and the third segment 126 of the first electrode 120 and the third segment 136 of the second electrode 130 have a length L2 and a width W1. In some embodiments, the length L1 is greater than about 50 μm and less than about 250 μm, and the length L2 is greater than about 50 μm and less than about 150 μm. In addition, the material of the first electrode 120 and the second electrode 130 can be a low resistance material, such as copper, copper-nickel alloy, nickel-phosphorus alloy, or sintered silver paste containing silver and glass. The first electrode 120 and the second electrode 130 can be an integrally formed structure.

[0029] Next, please refer to Figure 1B and Figure 1C , the resistor layer 140 can be manufactured. In some embodiments, a removable shielding layer 220 can be formed on the front surface 112 of the substrate 110 to shield the coating. The shielding layer 220 can shield the area of ​​the front surface 112 where the resistor layer 140 is not to be formed. The shielding layer 220 shields part of the first electrode 120 and part of the second electrode 130. Figure 1B As shown, for example, the shielding layer 220 can completely shield the first segment 122 and the second segment 124 of the first electrode 120, and the first segment 132 and the second segment 134 of the second electrode 130, and partially shield the third segments 126 and 136, while exposing parts of the third segments 126 and 136. For example, the material of the shielding layer 220 is a removable ink or photoresist. The shielding layer 220 can be formed by, for example, printing or photolithography.

[0030] Next, a layer of resistance material may be formed by, for example, sputtering to cover the front surface 112 of the substrate 110 and the shielding layer 220. Subsequently, the shielding layer 220 may be removed by solvent or water washing. Figure 1C As shown, when the shielding layer 220 is removed, the resistive material on the shielding layer 220 is also removed, and a resistive layer 140 having a preset pattern is formed on the front surface 112 of the substrate 110. The resistive layer 140 extends from the first electrode 120 to the second electrode 130, and contacts and electrically connects the first electrode 120 and the second electrode 130. For example, the material of the resistive layer 140 can be a metal alloy such as nickel-chromium alloy, copper-nickel alloy, nickel-chromium-silicon alloy, nickel-chromium-aluminum alloy, nickel-chromium-aluminum-silicon alloy, nickel-chromium-aluminum-yttrium alloy, nickel-chromium-tantalum-molybdenum alloy, tantalum nitride, copper-manganese-tin alloy, or copper-manganese-nickel alloy. The present disclosure can use other suitable resistive materials, but is not limited thereto.

[0031] By reducing the electrode space, the area covered by the resistor layer 140 on the front side 112 of the substrate 110 can be increased, so that the resistor layer 140 has more space to design more bending curves, thereby increasing the resistance value of the chip resistor 100 and reducing the voltage difference per unit length of the resistor layer 140. The electrode length of a traditional resistor is generally 1 / 6 to 1 / 4 of the length of the long side of the substrate, and the resistance zone length is generally 1 / 2 to 2 / 3 of the length of the long side of the substrate. The electrode length of the chip resistor 100 of this embodiment can be shortened by 50% relative to the electrode length of a traditional resistor, and the resistance zone length can be increased by 15%. According to the size design of 0402, that is, a length of 0.4mm and a width of 0.2mm, the basic operating voltage of a single resistor product can be increased from 50V to more than 60V.

[0032] Next, the resistance value can be selectively adjusted according to the product requirements of the chip resistor 100. In some embodiments, Figure 1D As shown, the resistor layer 140 is patterned by laser or physical processing to adjust the resistance value of the chip resistor 100 .

[0033] After the resistance adjustment operation of the chip resistor 100 is completed, Figure 1EAs shown, a first insulating protective layer 150 is formed on the front surface 112 of the substrate 110 by sputtering or chemical vapor deposition. The first insulating protective layer 150 completely covers the resistor layer 140, and covers a portion of the third segment 126 of the first electrode 120 and a portion of the third segment 136 of the second electrode 130. In some embodiments, the material of the first insulating protective layer 150 is silicon oxide, tantalum oxide, or silicon nitride.

[0034] Next, a conductive resin electrode layer 160 is formed by, for example, printing. Figure 1F As shown, the resin electrode layer 160 includes a first portion 162, a second portion 164, and a third portion 166, wherein the first portion 162, the second portion 164, and the third portion 166 are physically separated from each other. The first portion 162 covers the first electrode 120 and the portion of the first insulating protective layer 150 adjacent to the first electrode 120. The second portion 164 covers the second electrode 130 and the portion of the first insulating protective layer 150 adjacent to the second electrode 130. The first portion 162 and the second portion 164 can connect the first electrode 120 and the second electrode 130 respectively. By setting the first portion 162 and the second portion 164, the first electrode 120 and the second electrode 130 can be protected from the influence of environmental moisture and sulfur gas, and the external electrode electroplating connection can be achieved at the same time. The third portion 166 is located between the first portion 162 and the second portion 164, and covers the portion of the first insulating protective layer 150 on the resistor layer 140. The third portion 166 is disposed above the resistor layer 140 to improve the heat dissipation performance of the chip resistor 100 and provide metallic waterproofing. In some embodiments, the material of the resin electrode layer 160 is epoxy resin and silver.

[0035] Then, if Figure 1G As shown, a second insulating protective layer 170 is formed by, for example, printing. The second insulating protective layer 170 completely covers the third portion 166 of the resin electrode layer 160, and partially covers the first portion 162 and the second portion 164 of the resin electrode layer 160. For example, the material of the second insulating protective layer 170 may be epoxy resin, polyimide, or resin.

[0036] Next, if Figure 1H As shown, the third electrode 180 and the fourth electrode 190 can be formed on the back surface 114 of the substrate 110 by printing, for example. The third electrode 180 and the fourth electrode 190 are respectively opposite to the first electrode 120 and the second electrode 130. The shapes of the third electrode 180 and the fourth electrode 190 can be different from or the same as the shapes of the first electrode 120 and the second electrode 130. For example, the materials of the third electrode 180 and the fourth electrode 190 can be epoxy resin and silver.

[0037] Then, if Fig. 1I As shown, a first external electrode layer 200 and a second external electrode layer 210 of the chip resistor 100 can be manufactured. The first external electrode layer 200 extends from the first electrode 120 of the front surface 112 of the substrate 110 through the first side surface 116 of the substrate 110 to the third electrode 180 of the back surface 114. The second external electrode layer 210 extends from the second electrode 130 of the front surface 112 through the second side surface 118 of the substrate 110 to the fourth electrode 190 of the back surface 114. In some embodiments, the first external electrode layer 200 covers the first electrode 120 and the third electrode 180 to form a C-shaped structure; and the second external electrode layer 210 covers the second electrode 130 and the fourth electrode 190 to form an inverted C-shaped structure.

[0038] In some embodiments, a nickel-chromium layer is first formed on the first side 116 and the second side 118 of the substrate 110 by, for example, sputtering, and then a nickel layer and a tin layer are sequentially formed by, for example, electroplating, or a nickel layer, a copper layer, another nickel layer, and a tin layer are sequentially formed. Therefore, the first external electrode layer 200 and the second external electrode layer 210 may include a nickel-chromium layer, a nickel layer, and a tin layer stacked in sequence, or a nickel-chromium layer, a nickel layer, a copper layer, another nickel layer, and a tin layer stacked in sequence.

[0039] The electrodes and resistors of the chip resistor disclosed herein may be configured in different designs. Figure 2 , which is a schematic diagram showing the configuration of the first electrode 120a, the second electrode 130a, and the resistor layer 140a of a chip resistor 100a according to another embodiment of the present disclosure. In this embodiment, the first electrode 120a and the second electrode 130a are respectively disposed on a portion of the first edge region 112a and a portion of the second edge region 112b of the front surface 112 of the substrate 110. Therefore, the area occupied by the first electrode 120a and the second electrode 130a on the front surface 112 of the substrate 110 is reduced compared to the front electrode of a conventional resistor.

[0040] In some embodiments, the first electrode 120a and the second electrode 130a are respectively located at two diagonally opposite corners of the front surface 112 of the substrate 110. Both the first electrode 120a and the second electrode 130a are rectangular structures. The first electrode 120a extends in the direction of the second edge region 112b. The second electrode 130a extends in the direction of the first edge region 112a. The first electrode 120a and the second electrode 130a both have a length L3 and a width W2. In addition, there is a distance D between the first electrode 120a and the adjacent long side 112c of the front surface 112, and there is also a distance D between the second electrode 130a and the adjacent long side 112d of the front surface 112. In some embodiments, the length L3 is greater than about 50 μm and less than about 250 μm, the width W2 is greater than about 50 μm and less than about 200 μm, and the distance D is greater than or equal to 0 μm and less than about 250 μm.

[0041] like Figure 2 As shown, the resistor layer 140a has a first U-shaped groove CA1 and a second U-shaped groove CA2 respectively located at two diagonally opposite corners of the resistor layer 140a. The first U-shaped groove CA1 is located on the first electrode 120a, and exposes a portion of the first electrode 120a. The second U-shaped groove CA2 is located on the second electrode 130a, and exposes a portion of the second electrode 130a. The first U-shaped groove CA1 is spaced apart from the adjacent short side 112e of the front side 112 in the length direction of the first electrode 120a by a length L4, and has a length L5 in the length direction of the first electrode 120a. Similarly, the second U-shaped groove CA2 is spaced apart from the adjacent short side 112f of the front side 112 in the length direction of the second electrode 130a by a length L4, and has a length L5 in the length direction of the second electrode 130a. The length L5 is greater than the difference between the length L3 and the length L4. That is, the front end 120a' of the first electrode 120a is spaced apart from the inner side surface CA1' of the first U-shaped groove CA1, and the front end 130a' of the second electrode 130a is spaced apart from the inner side surface CA2' of the second U-shaped groove CA2.

[0042] From the above embodiments, it can be seen that one advantage of the present disclosure is that the chip resistor of the present disclosure reduces the first electrode and the second electrode on the front side of the substrate to increase the area of ​​the resistor layer covering the front side of the substrate. Thereby, the resistor layer has more space to design more bending curves, thereby increasing the resistance value of the resistor and reducing the voltage difference per unit length of the resistor.

[0043] Another advantage of the present disclosure is that the first and second portions of the resin electrode layer of the chip resistor of the present disclosure can protect the internal first and second electrodes from the influence of environmental moisture and sulfur gas, and can be used for external electrode electroplating connection. The third portion is arranged above the resistor layer to help the chip resistor dissipate heat and waterproof the metal.

[0044] Although the present disclosure has been disclosed as above by way of embodiments, it is not intended to limit the present disclosure. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be determined by the appended claims.

[0045]

Explanation of symbols

[0046] 100: Chip resistor

[0047] 100a: Chip resistor

[0048] 110:Substrate

[0049] 112: Front

[0050] 112a: First marginal area

[0051] 112b: Second marginal area

[0052] 112c: long side

[0053] 112d: long side

[0054] 112e: short side

[0055] 112f: short side

[0056] 114: Back

[0057] 116: First side

[0058] 116a: Edge

[0059] 118: Second side

[0060] 118a: Edge

[0061] 120: first electrode

[0062] 120a: first electrode

[0063] 120a': Front end

[0064] 122: First paragraph

[0065] 124: Second paragraph

[0066] 126: The third paragraph

[0067] 130: Second electrode

[0068] 130a: second electrode

[0069] 130a': Front end

[0070] 132: First paragraph

[0071] 134: Second paragraph

[0072] 136: The third paragraph

[0073] 140:Resistance layer

[0074] 140a: resistance layer

[0075] 150: first insulating protective layer

[0076] 160: Resin electrode layer

[0077] 162: Part 1

[0078] 164: Part 2

[0079] 166: Part 3

[0080] 170: Second insulating protective layer

[0081] 180: The third electrode

[0082] 190: Fourth electrode

[0083] 200: first external electrode layer

[0084] 210: Second external electrode layer

[0085] 220: Occlusion layer

[0086] CA1: First U-shaped groove

[0087] CA1': medial surface

[0088] CA2: Second U-shaped groove

[0089] CA2': medial surface

[0090] D: Distance

[0091] L: Length

[0092] L1: Length

[0093] L2: Length

[0094] L3: Length

[0095] L4: Length

[0096] L5: Length

[0097] W: Width

[0098] W1: Width

[0099] W2: width.

Claims

1. A chip resistor, characterized in that: The chip resistor contains: A substrate, comprising a front surface and a back surface, wherein the front surface comprises a first edge region and a second edge region opposite to each other; A first electrode and a second electrode are respectively disposed on a portion of the first edge region and a portion of the second edge region; A resistance layer is disposed on the front surface and extends from the first electrode to the second electrode; A first insulating protective layer completely covers the resistance layer; A resin electrode layer, wherein the resin electrode layer comprises: A first portion covering the first electrode and a portion of the first insulating protection layer adjacent to the first electrode; A second portion covering the second electrode and a portion of the first insulating protection layer adjacent to the second electrode; as well as A third portion covering a portion of the first insulating protection layer on the resistance layer, wherein the first portion, the second portion, and the third portion are separated from each other; A second insulating protective layer completely covers the third portion and partially covers the first portion and the second portion; A third electrode and a fourth electrode are disposed on the back surface and are respectively opposite to the first electrode and the second electrode; A first external electrode layer, extending from the first electrode through the first side of the substrate to the third electrode; as well as The second external electrode layer extends from the second electrode through the second side surface of the substrate to the fourth electrode.

2. The chip resistor according to claim 1, characterized in that: Each of the first electrode and the second electrode includes a first segment, a second segment, and a third segment. The first segment and the second segment are respectively joined to opposite ends of the third segment and protrude from the third segment. The third segment of the first electrode and the third segment of the second electrode extend along one side of the first side and one side of the second side, respectively. The first electrode has a C-shaped structure, and the second electrode has an inverted C-shaped structure.

3. The chip resistor according to claim 2, characterized in that: The length of each of the plurality of first segments and the plurality of second segments is greater than 50 μm and less than 250 μm, and the length of each of the plurality of third segments is greater than 50 μm and less than 150 μm.

4. The chip resistor according to claim 1, characterized in that: Each of the first electrode and the second electrode is a rectangular structure, and the first electrode and the second electrode extend toward the second edge region and the first edge region respectively, and each of the first electrode and the second electrode has a length greater than 50 μm and less than 250 μm and a width greater than 50 μm and less than 200 μm.

5. The chip resistor according to claim 4, characterized in that: The first electrode and the second electrode are respectively located at two diagonally opposite corners of the front surface, and the resistance layer has a first U-shaped groove and a second U-shaped groove respectively exposing part of the first electrode and part of the second electrode, the front end of the first electrode is separated from the inner side surface of the first U-shaped groove, and the front end of the second electrode is separated from the inner side surface of the second U-shaped groove.

6. The chip resistor according to claim 5, characterized in that: A distance between each of the first electrode and the second electrode and a long side of the adjacent front surface is greater than or equal to 0 μm and less than 250 μm.

7. The chip resistor according to claim 1, characterized in that: The materials of the first electrode and the second electrode are copper, copper-nickel alloy, nickel-phosphorus alloy, or sintered silver paste containing silver and glass, and the materials of the third electrode and the fourth electrode are epoxy resin and silver.

8. The chip resistor according to claim 1, characterized in that: The material of the resistance layer is nickel-chromium alloy, copper-nickel alloy, nickel-chromium-silicon alloy, nickel-chromium-aluminum alloy, nickel-chromium-aluminum-silicon alloy, nickel-chromium-aluminum-yttrium alloy, nickel-chromium-tantalum-molybdenum alloy, tantalum nitride, copper-manganese-tin alloy, or copper-manganese-nickel alloy.

9. The chip resistor according to claim 1, characterized in that: The material of the first insulating protection layer is silicon oxide, tantalum oxide, or silicon nitride, and the material of the second insulating protection layer is epoxy resin, polyimide, or resin.

10. The chip resistor according to claim 1, characterized in that: The materials of the resin electrode layer are epoxy resin and silver.

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