Beam Glitch recovery method and system of ion implanter

Abstract

The invention discloses a beam Glitch recovery method and system of an ion implanter. The method comprises the following steps: monitoring a beam Glitch in real time; when a beam Glitch occurs, the beam is cut off immediately, a wafer injection interruption position is recorded as a first interruption position, and the wafer moves to a safe position; after monitoring that the stability and the uniformity of the beam reach indexes, immediately starting one-time reverse supplementary bonding of the Glitch, and carrying out one-time reverse supplementary bonding of the Glitch on the wafer; and when primary Glitch reverse refilling of the wafer is carried out, refilling of the wafer is carried out from a non-injection region, and when the wafer moves to the injection first interruption position, the beam is cut off, so that primary Glitch refilling injection is finished. According to the invention, not only can one-time beam Glitch refilling be completed, but also multiple times of Glitch refilling can be realized, and the method is an important remedy method for the safety of an ion implanter product.

Description

Technical Field

[0001] The present invention mainly relates to the technical field of semiconductor equipment manufacturing, and in particular to a beam glitch recovery method and system for an ion implanter. Background Art

[0002] With the rapid development of integrated circuit manufacturing technology, higher and higher requirements are put forward for semiconductor process technology. Among them, semiconductor ion implantation is an important link in the production process of semiconductor chips, and the stability of the implantation beam is one of the key factors that determine the quality of ion implantation.

[0003] During the implantation process, the ion implanter will experience a sudden change in beam current, that is, a sudden drop or disappearance of the ion beam current, which is called beam current glitch. In the ion implanter system, beam current glitch may occur due to different conditions such as high-voltage power supply ignition, low-voltage power supply load short circuit, motor enable failure, etc. Beam current glitch causes the wafer implantation to be interrupted, resulting in insufficient implantation dose in some areas of the wafer, which directly affects the uniformity of wafer doping. Specifically, as mentioned above, there are many factors that affect the instability of the terminal beam. First, in the ion source part, the change of low-voltage power supply load, such as filament short circuit or open circuit, arc current reduction and gas flow change, will cause abnormal ion beam; second, the abnormality of the magnet coil causes the magnetic field to change, making the horizontal and vertical directions of the ion beam abnormal, and the required ions or ion intensity cannot be obtained; secondly, in terms of target disk control, during ion implantation, the linear motor drives the target disk to perform mechanical scanning movement in the vertical direction. A slight tilt or loss of control of the target disk will cause irreversible effects on the product; finally, the sparking phenomenon of the high-voltage power supply will cause the high voltage to be instantly unstable and affect the stability of the beam, resulting in uneven ion implantation, and then affecting the quality of the process product. Therefore, it is very necessary to adopt means to compensate for the influence of the above factors. Summary of the invention

[0004] In view of the technical problems existing in the prior art, the present invention provides a beam glitch recovery method and system for an ion implanter which is easy to operate.

[0005] In order to solve the above technical problems, the technical solution proposed by the present invention is:

[0006] A beam glitch recovery method for an ion implanter comprises the following steps:

[0007] Real-time monitoring of beam glitch;

[0008] When beam glitch occurs, the beam is immediately turned off, and the wafer injection interruption position is recorded as the first interruption position. At the same time, the wafer moves to a safe position.

[0009] After monitoring the beam stability and uniformity to reach the target, immediately start the reverse glitch re-hit, and the wafer will be re-hit with the reverse glitch;

[0010] When performing a glitch reverse injection on the wafer, the wafer starts from the non-injected area, and the beam is turned off when the wafer moves to the first injection interruption position. At this point, a glitch injection injection is completed.

[0011] Preferably, when the wafer is subjected to a reverse glitch, beam glitch occurs again, i.e., a secondary glitch is generated, the ion beam is turned off, and at the same time, the wafer injection interruption position is recorded as the second interruption position. At this time, the wafer moves to a safe position;

[0012] After monitoring the beam stability and uniformity to meet the indicators, the reverse re-shooting of the secondary glitch is started again, and the re-shooting area is located between the first interruption position and the second interruption position;

[0013] The wafer moves to the second interruption position for injection, and the initial value of the extracted ion beam is immediately restored so that the ion beam is injected into the wafer along the normal transmission path. When the voltage of the extracted ion beam is restored to the initial value, the ion beam is immediately injected into the wafer along the normal transmission path. The movement of the wafer causes the ion beam to be injected into the un-implanted area. When the re-injection of the un-injected area is completed, the wafer moves to the first interruption position, and the ion beam is immediately turned off. At this point, the secondary Glitch re-injection is completed.

[0014] Preferably, the specific process of moving the wafer to the second interruption position for implantation is as follows:

[0015] The voltage value of the extracted ion beam is changed to achieve the purpose of beam deflection. The beam is deflected to the wall of the analyzer magnet coil and cannot be injected into the wafer via the normal transmission path. While waiting for the wafer to move to the second injection interruption position, the initial value of the extracted ion beam is immediately restored so that the ion beam can be injected into the wafer via the normal transmission path.

[0016] Preferably, if the N+1th Glitch occurs during the Nth Glitch re-hit, the arc voltage power supply is immediately turned off, and the wafer injection interruption position is recorded at the same time, recorded as the N+1th interruption position, and the un-re-hit area is replaced with the area between the N+1th wafer injection interruption position and the first wafer injection interruption position; then the N+1th Glitch re-hit is performed, and the voltage value of the extracted ion beam is first changed to achieve the purpose of beam deflection, and the wafer is waited for to move to the N+1th injection interruption position, and the initial value of the extracted ion beam is immediately restored so that the ion beam is injected into the wafer with a normal transmission path, and the wafer moves in the vertical direction so that the ion beam is injected into the un-implanted area. When the re-hit of the un-implanted area is completed, that is, the wafer moves to the first injection interruption position 1, the beam is immediately turned off, and the N+1th Glitch re-hit injection is completed.

[0017] Preferably, the ion implanter glitch monitoring system is used to monitor in real time whether the beam has glitch.

[0018] Preferably, the beam current is turned off by turning off the arc voltage power supply.

[0019] Preferably, whether beam glitch occurs is determined by monitoring a sudden change in voltage of the high voltage power supply and / or a sudden change in current of the low voltage power supply.

[0020] The present invention also discloses a computer program product, comprising a computer program, wherein the computer program executes the steps of the method described above when executed by a processor.

[0021] The present invention further discloses a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the steps of the method described above are executed.

[0022] The present invention also discloses a beam glitch recovery system for an ion implanter, comprising a memory and a processor connected to each other, wherein a computer program is stored in the memory, and when the computer program is run by the processor, the steps of the method described above are executed.

[0023] Compared with the prior art, the advantages of the present invention are:

[0024] The ion implanter beam glitch recovery method of the present invention can realize a beam glitch re-hitting method, which can not only complete the beam glitch re-hitting once, but also realize multiple beam glitch re-hitting, and is an important remedial method for the safety of ion implanter products. The above method is simple to operate and easy to implement. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a flow chart of an embodiment of the ion implanter beam glitch recovery method of the present invention.

[0026] Figure 2 It is a relationship diagram between wafer position and dose of the present invention.

[0027] Figure 3 It is a schematic diagram of the secondary glitch repair of the wafer of the present invention.

[0028] Figure 4 It is a transmission deflection path diagram of the beam of the present invention inside the analyzer magnet.

[0029] Figure 5 It is a diagram of the normal transmission path of the beam of the present invention inside the analyzer magnet. DETAILED DESCRIPTION

[0030] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments.

[0031] like Figure 1 As shown, the ion implanter beam glitch recovery method provided by the embodiment of the present invention comprises the steps of:

[0032] The ion implanter glitch monitoring system monitors in real time whether the beam has glitch, including beam glitch caused by sudden change of high voltage power supply voltage and low voltage power supply current.

[0033] When the glitch monitoring system detects the first glitch, the beam monitoring controller immediately shuts off the arc voltage power supply and records the wafer implantation interruption position 1#;

[0034] That is, reverse re-irradiation is performed on the un-implanted area of ​​the wafer. When the wafer is injected from top to bottom, the first glitch occurs, and the glitch recovery method is to re-irradiate the wafer with ion beam from bottom to top; when the wafer is injected from bottom to top, the first glitch occurs, and the glitch recovery method is to re-irradiate the wafer with ion beam from top to bottom. No matter how many beam glitch occurs, the direction of wafer movement at the first beam glitch is used as the basis. The direction of wafer movement during subsequent glitch re-irradiation is opposite to the direction of wafer movement when the first glitch occurs.

[0035] If the glitch monitoring system detects beam glitch again when the wafer is undergoing the first glitch re-injection, the beam monitoring controller will immediately shut down the arc voltage power supply and record the wafer injection interruption position 2#;

[0036] When the wafer is subjected to secondary glitch re-hit, the voltage value of the extracted ion beam is first changed to achieve the purpose of beam deflection, and the wafer is waited for to move to the injection interruption position 2#, and the initial value of the extracted ion beam is immediately restored so that the ion beam is injected into the wafer along the normal transmission path. The wafer moves in the vertical direction so that the ion beam is injected into the non-implanted area. When the re-hit of the non-implanted area is completed, that is, the wafer moves to the injection interruption position 1#, the beam monitoring controller immediately turns off the arc voltage power supply, and the secondary glitch re-hit injection is completed.

[0037] The wafer can be re-glazed an unlimited number of times. For example, when performing the Nth glitch re-glazing, the N+1th glitch occurs, and the beam monitoring controller immediately turns off the arc voltage power supply, and records the wafer injection interruption position N+1# at the same time, and the un-re-glazed area is replaced with the area between the wafer injection interruption position N+1# and the wafer injection interruption position 1#. When performing the N+1th glitch re-glazing, first change the voltage value of the extracted ion beam to achieve the purpose of beam deflection, wait for the wafer to move to the injection interruption position N+1#, and immediately restore the initial value of the extracted ion beam so that the ion beam is injected into the wafer in a normal transmission path. The wafer moves vertically so that the ion beam is injected into the un-implanted area. When the un-implanted area is re-glazed, that is, the wafer moves to the injection interruption position 1#, the beam monitoring controller immediately turns off the arc voltage power supply, and the N+1th glitch re-glazing injection is completed.

[0038] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0039] Under normal beam conditions, the beam mechanically scans the wafer along a normal transmission path. The normal beam path is determined by the operating parameters of the optical path components. For example, a high-voltage power supply provides a specific voltage to the graphite electrode, which generates a corresponding electric field. A low-voltage power supply provides a specific current to the magnet coil, which generates a specific magnetic field. Only then can the ion beam be injected into the wafer along the normal transmission path.

[0040] like Figure 2 The figure shows the relationship between wafer position and dose in the beam glitch recovery method of the ion implanter. Every time the wafer moves through a pass, the same ion dose will be uniformly injected into the wafer.

[0041] If the wafer has the first beam glitch during the current pass (from top to bottom) of injection, the beam monitoring controller will immediately shut down the arc voltage power supply and record the wafer injection interruption position 1#. The wafer moves to a safe position. After the beam monitoring controller monitors that the beam stability and uniformity meet the indicators, it immediately starts a reverse glitch (from bottom to top) and the wafer performs a reverse glitch. During the reverse glitch of the wafer, if the beam does not glitch again, the injection of the un-glitched area is completed, that is, the wafer moves to the injection interruption position 1#, the beam monitoring controller immediately shuts down the arc voltage power supply, and the beam is also shut down accordingly within 10ms. At this point, a glitch injection is completed.

[0042] If a beam glitch occurs again during the first glitch re-hit, that is, a secondary glitch is generated, the beam monitoring controller immediately shuts off the arc voltage power supply, and the ion beam is also shut down accordingly. At the same time, the wafer injection interruption position 2# is recorded. At this time, the wafer moves to a safe position. After the beam monitoring controller monitors that the beam stability and uniformity meet the indicators, the reverse re-hit of the secondary glitch is started again (from bottom to top). Figure 3 As shown, the supplementary area is located between the injection interruption position 2# and the injection interruption position 1#. First, the voltage value of the extracted ion beam is changed to achieve the purpose of beam deflection, such as Figure 4 As shown, the beam is deflected to the wall of the analyzer magnet coil and cannot be injected into the wafer via the normal transmission path. Wait for the wafer to move to the injection interruption position 2#, and immediately restore the initial value of the extracted ion beam so that the ion beam can be injected into the wafer via the normal transmission path, as shown in FIG. Figure 5 As shown, when the voltage of the extracted ion beam returns to the initial value, the ion beam is immediately injected into the wafer along the normal transmission path. The wafer moves from bottom to top to allow the ion beam to be injected into the un-implanted area. When the un-implanted area is completed, that is, the wafer moves to the injection interruption position 1#, the beam monitoring controller immediately turns off the arc voltage power supply, and the ion beam is also turned off immediately. At this point, the secondary Glitch injection is completed.

[0043] Taking the secondary glitch reapply as an example, multiple beam glitch reapply can be achieved through the same glitch recovery method.

[0044] The ion implanter beam glitch recovery method of the present invention can realize a method for re-hitting after beam glitch, and can not only complete the re-hitting of beam glitch once, but also realize the re-hitting of beam glitch multiple times, which is an important remedial method for ion implanter product safety.

[0045] The present invention also discloses a computer program product, including a computer program, which executes the steps of the above method when executed by a processor. The present invention further discloses a computer-readable storage medium, on which a computer program is stored, which executes the steps of the above method when executed by a processor. The present invention also discloses a beam glitch recovery system for an ion implanter, including a memory and a processor connected to each other, on which a computer program is stored, which executes the steps of the above method when executed by a processor. The medium, product and system of the present invention all correspond to the above method and also have the advantages described in the above method.

[0046] The present invention implements all or part of the processes in the above-mentioned embodiment method, and can also be completed by hardware related to computer program instructions. The computer program can be stored in a computer-readable storage medium. When the computer program is executed by the processor, the steps of the above-mentioned method embodiment can be implemented. Among them, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form. Computer-readable storage media include: any entity or device that can carry computer program code, recording medium, U disk, mobile hard disk, disk, optical disk, computer memory, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), electric carrier signal, telecommunication signal and software distribution medium. The memory is used to store computer programs and / or modules. The processor implements various functions by running or executing computer programs and / or modules stored in the memory, and calling data stored in the memory. The memory may include high-speed random access memory and may also include non-volatile memory, such as a hard disk, an internal memory, a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card (Flash Card), at least one disk storage device, a flash memory device, or other volatile solid-state storage devices.

[0047] The above are only preferred embodiments of the present invention. The protection scope of the present invention is not limited to the above embodiments. All technical solutions under the concept of the present invention belong to the protection scope of the present invention. It should be pointed out that for ordinary technicians in this technical field, some improvements and modifications without departing from the principle of the present invention should be regarded as the protection scope of the present invention.

Claims

1. A beam glitch recovery method for an ion implanter, characterized in that: Includes steps: Real-time monitoring of beam glitch; When beam glitch occurs, the beam is immediately turned off, and the wafer injection interruption position is recorded as the first interruption position. At the same time, the wafer moves to a safe position. After monitoring the beam stability and uniformity to reach the target, immediately start the reverse glitch re-hit, and the wafer will be re-hit with the reverse glitch; When performing a glitch reverse injection on the wafer, the wafer starts from the non-injected area, and the beam is turned off when the wafer moves to the first injection interruption position. At this point, a glitch injection injection is completed.

2. The beam glitch recovery method of the ion implanter according to claim 1, characterized in that: When the wafer is reversely glitched once, beam glitch occurs again, that is, secondary glitch is generated, the ion beam is turned off, and at the same time, the wafer injection interruption position is recorded as the second interruption position. At this time, the wafer moves to a safe position; After monitoring the beam stability and uniformity to meet the indicators, the reverse re-shooting of the secondary glitch is started again, and the re-shooting area is located between the first interruption position and the second interruption position; The wafer moves to the second interruption position for injection, and the initial value of the extracted ion beam is immediately restored so that the ion beam is injected into the wafer along the normal transmission path. When the voltage of the extracted ion beam is restored to the initial value, the ion beam is immediately injected into the wafer along the normal transmission path. The movement of the wafer causes the ion beam to be injected into the un-implanted area. When the re-injection of the un-injected area is completed, the wafer moves to the first interruption position, and the ion beam is immediately turned off. At this point, the secondary Glitch re-injection is completed.

3. The beam glitch recovery method of the ion implanter according to claim 2, characterized in that: The specific process of the wafer moving to the second interruption position of the implantation is as follows: The voltage value of the extracted ion beam is changed to achieve the purpose of beam deflection. The beam is deflected to the wall of the analyzer magnet coil and cannot be injected into the wafer via the normal transmission path. While waiting for the wafer to move to the second injection interruption position, the initial value of the extracted ion beam is immediately restored so that the ion beam can be injected into the wafer via the normal transmission path.

4. The beam glitch recovery method of an ion implanter according to claim 2 or 3, characterized in that: If the N+1th Glitch occurs during the Nth Glitch re-injection, the arc voltage power supply is immediately turned off, and the wafer injection interruption position is recorded as the N+1th interruption position. The un-re-injection area is replaced with the area between the N+1th interruption position of wafer injection and the first interruption position of wafer injection; Then perform the N+1th Glitch re-hit. First, change the voltage value of the extracted ion beam to achieve the purpose of beam deflection, wait for the wafer to move to the N+1 interruption position of injection, immediately restore the initial value of the extracted ion beam so that the ion beam is injected into the wafer along the normal transmission path, and move the wafer in the vertical direction to inject the ion beam into the non-implanted area. When the re-hit of the non-implanted area is completed, that is, the wafer moves to the first interruption position 1 of injection, and immediately turn off the beam. At this point, the N+1th Glitch re-hit injection is completed.

5. The beam glitch recovery method of an ion implanter according to claim 1, 2 or 3, characterized in that: The ion implanter glitch monitoring system is used to monitor in real time whether the beam has glitch.

6. The beam glitch recovery method of the ion implanter according to claim 5, characterized in that: The beam is shut off by turning off the arc voltage power supply.

7. The beam glitch recovery method of an ion implanter according to claim 1, 2 or 3, characterized in that: Whether beam glitch occurs is determined by monitoring the voltage mutation of the high voltage power supply and / or the current mutation of the low voltage power supply.

8. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the steps of the method according to any one of claims 1 to 7 are performed.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the computer program performs the steps of the method according to any one of claims 1 to 7.

10. A beam glitch recovery system for an ion implanter, comprising a memory and a processor connected to each other, wherein a computer program is stored in the memory, characterized in that: When the computer program is executed by a processor, the computer program performs the steps of the method according to any one of claims 1 to 7.

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