Wafer cleaning method

Abstract

The invention provides a wafer cleaning method, which provides a wafer cleaning device, and provides a cleaning liquid for a wafer to be cleaned through a liquid supply piece. A heat source can be effectively provided through the heating piece, and ammonium fluoride crystals are effectively prevented from being formed; the temperature can be automatically and conveniently controlled through the temperature detection piece and the controller; rapid cooling can be achieved through the cooling piece, and aging is improved; the reaction between ammonium fluoride crystals and metal materials can be avoided through the passivation layer, and the probability of generation of metal impurities is reduced; the liquid supply piece can be effectively protected through the liquid supply piece shell, and reaction between the liquid supply piece and ammonium fluoride crystals is avoided; the influence of heat on the cleaning liquid in the liquid supply piece can be avoided through the heat insulation piece, temperature regulation and control in the wafer cleaning process are achieved, and ammonium fluoride crystals are effectively prevented from being generated in time. Therefore, according to the wafer cleaning method, the time efficiency can be improved, and the product capacity and quality can be improved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductors and relates to a wafer cleaning method. Background Art

[0002] Wafer cleaning is one of the most important steps in the semiconductor manufacturing process. Its purpose is to remove various contaminants on the wafer surface to ensure that subsequent process steps can be carried out on a clean wafer surface, thereby improving the yield and reducing the risk of damage.

[0003] To effectively clean wafers, the industry generally uses the following cleaning steps:

[0004] Step 1: Clean with acetone and methanol solvents.

[0005] The second step: RCA cleaning, that is, using a mixed solution of ammonia, hydrogen peroxide and deionized water to clean the wafer, mainly to remove organic pollutants, particles and metal ions on the wafer surface.

[0006] The third step: HF cleaning, that is, using a diluted hydrofluoric acid solution to clean the wafer, mainly used to remove the oxide layer and some silicon surface contaminants.

[0007] Step 4: Rinse with high-purity deionized water and then dry by spin drying or other drying techniques to avoid the formation of water spots and spots.

[0008] During the wet cleaning process, ammonium fluoride is formed due to the volatilization reaction of ammonia water and hydrogen fluoride, and ammonium fluoride easily forms ammonium fluoride crystals on the surface of production equipment. Ammonium fluoride crystals are corrosive to metals, and long-term accumulation of ammonium fluoride crystals may fall off and contaminate wafers. The industry usually uses deionized water cleaning to remove ammonium fluoride crystals to avoid contamination of equipment and products by ammonium fluoride crystals.

[0009] However, the existing cleaning method for removing ammonium fluoride crystals requires frequent cleaning of the equipment, which will affect the wafer cleaning efficiency. At the same time, during the manual cleaning of the equipment, not only will there be a risk of contamination, but it will also increase the risk of exposure of operators in the production environment. In addition, manual cleaning will also bring in metal ions and cause equipment contamination.

[0010] Therefore, it is necessary to provide a wafer cleaning method. Summary of the invention

[0011] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a wafer cleaning method for solving the problem of ammonium fluoride crystallization in wafer cleaning in the prior art.

[0012] To achieve the above object and other related objects, the present invention provides a wafer cleaning method, comprising the following steps:

[0013] S-1: Provide a wafer cleaning device, the wafer cleaning device comprising a chamber, a carrier, a liquid supply component, a heating component, a temperature detection component and a controller; wherein the liquid supply component is arranged in the chamber and located above the carrier; the heating component is arranged outside the liquid supply component; the temperature detection component is arranged in the chamber; the controller communicates with the heating component and the temperature detection component;

[0014] S-2: placing the wafer to be cleaned on the carrier;

[0015] S-3: Start the wafer cleaning device, including starting the liquid supply component to provide cleaning liquid to the wafer to be cleaned; starting the heating component to provide a heat source to the liquid supply component; starting the temperature detection component to detect the temperature of the liquid supply component; starting the controller to obtain the detection information of the temperature detection component and regulate the heating component.

[0016] The present invention also provides a wafer cleaning method, comprising the following steps:

[0017] Sa: Provide a wafer cleaning device, the wafer cleaning device includes a cavity, a carrier, a liquid supply component, a liquid supply component shell, a heat insulating component, a heating component, a temperature detection component and a controller; wherein the liquid supply component is arranged in the cavity and is located above the carrier; the liquid supply component shell is arranged in the cavity and is located outside the liquid supply component, and there is a accommodating space between the outer wall of the liquid supply component and the inner wall of the liquid supply component shell; the heat insulating component is arranged in the accommodating space and covers the liquid supply component; the heating component is arranged in the accommodating space and is located between the heat insulating component and the liquid supply component shell; the temperature detection component is arranged in the cavity; the controller communicates with the heating component and the temperature detection component;

[0018] Sb: placing the wafer to be cleaned on the carrier;

[0019] Sc: starting the wafer cleaning device, including starting the liquid supply component to provide cleaning liquid to the wafer to be cleaned; starting the heating component to provide a heat source to the shell of the liquid supply component; starting the temperature detection component to detect the temperature of the shell of the liquid supply component;

[0020] The controller is started to obtain detection information of the temperature detection element and to regulate the heating element.

[0021] Optionally, in step Sc, while the liquid supply component provides cleaning liquid to the wafer to be cleaned, the heating component is started to provide a heat source to the housing of the liquid supply component.

[0022] Optionally, the temperature range of the heat source provided by the heating element is above 45°C.

[0023] Optionally, the wafer cleaning device also includes a cooling component, which is arranged in the cavity, provides a cold source through the cooling component, and communicates with the controller; the cooling component includes one or a combination of an air-cooled cooling component and a liquid-cooled cooling component, wherein the air-cooled cooling component includes a nitrogen cooling component or an inert gas cooling component.

[0024] Optionally, the heating element includes one or a combination of a heating coil, a heating wire and a heating film.

[0025] Optionally, the liquid supply component includes a liquid supply pipe and a liquid supply nozzle connected to the liquid supply pipe, and the heating component covers the liquid supply pipe and the liquid supply nozzle.

[0026] Optionally, the wafer cleaning device includes N>1 of the temperature detection components, and the N temperature detection components are arranged at equal intervals.

[0027] Optionally, the controller communicates by one or a combination of wired communication and wireless communication.

[0028] Optionally, a passivation layer is further disposed on the periphery of the liquid supply component, and the passivation layer includes a single layer or a combination of a PC material layer, a PP material layer, a PEEK material layer and a PFA material layer.

[0029] As described above, the wafer cleaning method of the present invention provides a wafer cleaning device, and provides cleaning liquid to the wafer to be cleaned through a liquid supply part; a heat source can be effectively provided through a heating part to effectively prevent the formation of ammonium fluoride crystals; an automatic and convenient temperature control can be achieved through a temperature detection part and a controller; rapid cooling can be achieved through a cooling part to improve the timeliness; the reaction of ammonium fluoride crystals with metal materials can be avoided through a passivation layer, and the probability of metal impurities being generated can be reduced; the liquid supply part can be effectively protected by a liquid supply part housing to avoid the reaction of the liquid supply part with ammonium fluoride crystals; the influence of heat on the cleaning liquid in the liquid supply part can be avoided through a heat insulation part, and the temperature can be regulated simultaneously during the wafer cleaning process, so as to timely and effectively avoid the generation of ammonium fluoride crystals. Therefore, the wafer cleaning method of the present invention can improve the timeliness, and can improve the product capacity and quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 Shown is a schematic diagram of the process flow of the wafer cleaning method in Embodiment 1 of the present invention.

[0031] Figure 2 Shown is a schematic structural diagram of a wafer cleaning device in Embodiment 1 of the present invention.

[0032] Figure 3 Display as Figure 2 Schematic diagram of the cross-sectional structure along AA.

[0033] Figure 4 Shown is a schematic diagram of the process flow of the wafer cleaning method in the second embodiment of the present invention.

[0034] Figure 5 Shown is a schematic structural diagram of a wafer cleaning device in Embodiment 2 of the present invention.

[0035] Figure 6 Display as Figure 5 Schematic diagram of the cross-sectional structure along BB.

[0036] Figure 7 Shown is a schematic diagram of the module distribution of the wafer cleaning device in the present invention.

[0037] Description of Reference Numerals

[0038] 110, 210 cavity

[0039] 120, 220 load platform

[0040] 130, 230 Liquid supply parts

[0041] 140, 240 Heating element

[0042] 150, 250 temperature detection parts

[0043] 160, 260 cooling parts

[0044] 170, 270 controller

[0045] 280 Liquid supply housing

[0046] 290 Insulation DETAILED DESCRIPTION

[0047] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0048] It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0049] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0050] Embodiment 1

[0051] See also Figure 1 , this embodiment provides a wafer cleaning method, comprising the following steps:

[0052] S-1: Provide a wafer cleaning device, the wafer cleaning device comprising a chamber, a carrier, a liquid supply component, a heating component, a temperature detection component and a controller; wherein the liquid supply component is arranged in the chamber and located above the carrier; the heating component is arranged outside the liquid supply component; the temperature detection component is arranged in the chamber; the controller communicates with the heating component and the temperature detection component;

[0053] S-2: placing the wafer to be cleaned on the carrier;

[0054] S-3: Start the wafer cleaning device, including starting the liquid supply component to provide cleaning liquid to the wafer to be cleaned; starting the heating component to provide a heat source to the liquid supply component; starting the temperature detection component to detect the temperature of the liquid supply component; starting the controller to obtain the detection information of the temperature detection component and regulate the heating component.

[0055] First, see Figure 2 and Figure 3 , execute step S-1, wherein, Figure 3 Display as Figure 2 The wafer cleaning device provided in this embodiment includes:

[0056] Cavity 110;

[0057] A carrier 120, wherein the carrier 120 is disposed in the chamber 110 and is used to carry the wafer to be cleaned;

[0058] A liquid supplying member 130, wherein the liquid supplying member 130 is disposed in the cavity 110 and located above the carrier 120, and is used for providing cleaning liquid to the wafer to be cleaned;

[0059] A heating element 140, wherein the heating element 140 is disposed outside the liquid supply element 130 and is used to provide a heat source to the liquid supply element 130;

[0060] A temperature detection member 150, wherein the temperature detection member 150 is disposed in the cavity 110 and is used to detect the temperature of the liquid supply member 130;

[0061] The controller 170 communicates with the heating element 140 and the temperature detecting element 150 .

[0062] Specifically, in the semiconductor process, in order to remove various pollutants on the surface of the wafer, most of them have an RCA cleaning step, that is, using a mixed solution containing ammonia, hydrogen peroxide and deionized water to clean the wafer, and an HF cleaning step, that is, using a diluted hydrofluoric acid solution to clean the wafer, which is mainly used to remove the oxide layer and some silicon surface pollutants. However, in the wet cleaning process, ammonium fluoride will be formed due to the volatilization reaction of ammonia and hydrogen fluoride, and ammonium fluoride is easy to form ammonium fluoride crystals on the surface of production equipment, such as liquid supply parts, and ammonium fluoride crystals are corrosive to metals, and long-term accumulated ammonium fluoride crystals are prone to falling, which will contaminate the wafer. The industry usually uses deionized water cleaning to remove ammonium fluoride crystals to avoid contamination of equipment and products by ammonium fluoride crystals.

[0063] Among them, in the process of wafer cleaning, the process that the wafer goes through mainly includes: cleaning-water washing-drying. However, the use of deionized water for cleaning will affect the efficiency of wafer cleaning. At the same time, the process of manual equipment cleaning will also bring in metal ions and pollute the equipment.

[0064] The inventors have found that temperature plays a crucial role in the formation of ammonium fluoride crystals. When the surface temperature of the liquid supply part 130 reaches above 45°C, such as 45°C, 50°C, 65°C, etc., no ammonium fluoride crystals will be generated on the surface of the liquid supply part 130, so there is no need to perform a deionized water cleaning operation on the surface of the liquid supply part 130. Therefore, manual cleaning due to ammonium fluoride crystals can be avoided, thereby improving the wafer cleaning efficiency, reducing the possibility of external contamination caused by manual intervention, reducing the probability of equipment contamination, and improving product quality.

[0065] The wafer cleaning device in this embodiment can effectively heat the liquid supply component 130 through the setting of the heating component 140, thereby effectively preventing the formation of ammonium fluoride crystals; and the setting of the temperature detection component 150 and the controller 170 can also realize automatic and convenient control of the temperature.

[0066] As an example, the liquid supply part 130 may include a metal liquid supply part or an organic liquid supply part, which can be selected according to needs. For example, the liquid supply part 130 may be a stainless steel liquid supply part that is corrosion-resistant and has relatively stable performance. Of course, the liquid supply part 130 may also be an organic liquid supply part that is corrosion-resistant and has relatively stable performance, such as a PC liquid supply part, a PP liquid supply part, a PEEK liquid supply part, and a PFA liquid supply part.

[0067] As an example, the outer wall of the heating element 140 may also be coated with a passivation layer (not shown), and the passivation layer may include a single layer or a combination of PC material layers, PP material layers, PEEK material layers and PFA material layers.

[0068] Specifically, when the outer wall of the heating element 140 has the corrosion-resistant and relatively stable passivation layer, the corrosion-resistant and relatively stable passivation layer can protect the heating element 140 and the liquid supply element 130 to prevent the crystallization of ammonium fluoride from reacting with it, thereby reducing the probability of metal contamination, further improving product quality, and extending the life of the equipment, especially when the liquid supply element 130 is a metal liquid supply element. The selection of the passivation layer can include a single layer or a combination of PC material layers, PP material layers, PEEK material layers, and PFA material layers that are corrosion-resistant and relatively stable, and can be selected according to needs.

[0069] As an example, the heating element 140 may include one or a combination of a heating coil, a heating wire, and a heating film, and the specific selection can be made according to needs.

[0070] As an example, the liquid supply member 130 may include a liquid supply pipe and a liquid supply nozzle connected to the liquid supply pipe, and the heating member 140 covers the liquid supply pipe and the liquid supply nozzle.

[0071] Specifically, the shape, quantity, distribution and material of the liquid supply member 130 can be selected according to needs.

[0072] Furthermore, it is preferred that the heating element 140 entirely covers the liquid supply pipe and the liquid supply nozzle to provide a uniform heat source for the liquid supply element 130, but this is not limited to this. The heating element 140 may also partially cover the liquid supply element 130 as needed. For example, the heating element 140 may be composed of a combination of multiple heating components arranged at equal intervals.

[0073] As an example, the wafer cleaning device may include N>1 of the temperature detection components 150, and the N temperature detection components 150 are preferably arranged at equal intervals.

[0074] Specifically, the temperature detection member 150 can be arranged to obtain the temperature of the liquid supply member 130 so as to timely adjust the temperature of the outer wall of the liquid supply member 130. Figure 2 The temperature detection component 150 can be arranged on the outside of the heating component 140. In order to obtain a more accurate temperature detection result, the probe of the temperature detection component 150 can contact the outer wall of the liquid supply component 130. Of course, the temperature detection component 150 can also be arranged on the inner wall of the cavity 110 as needed, such as an infrared thermometer. Regarding the specific type of the temperature detection component 150, no excessive restrictions are made here.

[0075] like Figure 2 In order to obtain a more accurate temperature detection result, in this embodiment, the wafer cleaning device includes 8 temperature detection components 150, that is, the value of N is 8, and preferably the N temperature detection components 150 are arranged at equal intervals, but the value and distribution of N are not limited to this. As needed, N can also be 1, 4, 6, etc.

[0076] Furthermore, the wafer cleaning device may further include a cooling element 160 , and the cooling element 160 is disposed in the cavity 110 to provide a cold source.

[0077] Specifically, when the cooling component 160 is provided, the cooling component 160 can be used to promptly and effectively cool the liquid supply component 130, thereby conveniently regulating the temperature of the liquid supply component 130, reducing the time required for cooling, and timely adjusting the process steps to avoid affecting the cleaning liquid in the liquid supply component 130.

[0078] Furthermore, the cooling element 160 may include one or a combination of an air-cooling cooling element and a liquid-cooling cooling element.

[0079] Specifically, the air-cooling cooling component 160 may include a nitrogen cooling component or an inert gas cooling component, so as to perform air cooling through nitrogen or helium, argon, etc., so as to avoid the influence of the cooling gas on the process. When the air-cooling cooling component is adopted, the operation can be realized by using the existing wafer cleaning device without introducing additional device components. Therefore, while achieving cooling, the cost of equipment modification can be reduced and the convenience of operation can be improved.

[0080] Of course, the cooling element 160 may also be a liquid cooling element as required, such as a water cooling tube disposed on the periphery of the liquid supply element 130 or a water cooling tube disposed on the inner wall of the cavity 110 .

[0081] In this embodiment, Figure 2Three nitrogen cooling components are arranged on the inner wall of the cavity 110 to quickly cool the liquid supply component 130 , wherein the specific type, quantity and distribution of the cooling components 160 can be selected according to needs.

[0082] As an example, the communication method between the controller 170 and the heating element 140 , the cooling element 160 , and the temperature detecting element 150 may include one or a combination of wired communication and wireless communication.

[0083] Specifically, the controller 170 can realize automatic detection and regulation of the heating element 140, the cooling element 160 and the temperature detection element 150, so as to improve timeliness and improve product production capacity and quality. The communication method between the controller 170 and the heating element 140, the cooling element 160 and the temperature detection element 150 may include one or a combination of wired communication and wireless communication, which can be selected according to needs.

[0084] Next, step S- 2 is performed to place the wafer to be cleaned on the carrier 120 .

[0085] Specifically, the size of the wafer to be cleaned may include, for example, 6 inches, 8 inches, 12 inches, etc., which are not limited here, and the type of the carrier 120 may include, for example, an electrostatic adsorption carrier or a vacuum adsorption carrier, which are not limited here. Next, step S-3 is performed to start the wafer cleaning device.

[0086] Wherein, when starting the wafer cleaning device, the following steps may be included:

[0087] S-3-1: Start the liquid supply part 130 to provide cleaning liquid to the wafer to be cleaned;

[0088] S-3-2: Start the heating element 140 to provide a heat source to the liquid supply element 130;

[0089] S-3-3: Start the temperature detection component 150 to detect the temperature of the liquid supply component 130;

[0090] S-3-4: Start the controller 170 to obtain the detection information of the temperature detection element 150 and regulate the heating element 140.

[0091] Among them, in order to reduce the impact on the cleaning liquid located in the liquid supply part 130, in this embodiment, it is preferred to start step S-3-2 to provide a heat source after performing step S-3-1, and step S-3-3 and step S-3-4 can be started at the same time as starting step S-3-2 to monitor and control the temperature as soon as possible. The specific operation and process of step S-3 are not limited to this.

[0092] Furthermore, when the wafer cleaning device is provided with the cooling component 160, it also includes a step S-3-5 of starting the cooling component 160 after the step S-3-4.

[0093] Furthermore, as required, the process may include repeating step S-2 and step S-3 to achieve continuous cleaning of multiple wafers.

[0094] like Figure 7 The schematic diagram of the module distribution of the wafer cleaning device in the present invention is illustrated. Among them, the controller 170 can conveniently start or shut down the heating element 140, and the temperature detection element 150 can timely obtain the temperature of the liquid supply element 130, and timely feed back the acquired information to the controller 170, and the controller 170 makes a judgment, and if cooling is required, the cooling element 160 is started to cool the liquid supply element 130 until the temperature feedback from the temperature detection element 150 meets the requirements. Therefore, the entire temperature adjustment, whether heating or cooling, can be automatically controlled, thereby avoiding the influence of human operation such as pollutants and accuracy.

[0095] Embodiment 2

[0096] See also Figure 4 , this embodiment provides a wafer cleaning method, comprising the following steps:

[0097] Sa: Provide a wafer cleaning device, the wafer cleaning device includes a cavity, a carrier, a liquid supply component, a liquid supply component shell, a heat insulating component, a heating component, a temperature detection component and a controller; wherein the liquid supply component is arranged in the cavity and is located above the carrier; the liquid supply component shell is arranged in the cavity and is located outside the liquid supply component, and there is a accommodating space between the outer wall of the liquid supply component and the inner wall of the liquid supply component shell; the heat insulating component is arranged in the accommodating space and covers the liquid supply component; the heating component is arranged in the accommodating space and is located between the heat insulating component and the liquid supply component shell; the temperature detection component is arranged in the cavity; the controller communicates with the heating component and the temperature detection component;

[0098] Sb: placing the wafer to be cleaned on the carrier;

[0099] Sc: Starting the wafer cleaning device, including starting the liquid supply component to provide cleaning liquid to the wafer to be cleaned; starting the heating component to provide a heat source to the liquid supply component shell; starting the temperature detection component to detect the temperature of the liquid supply component shell; starting the controller to obtain the detection information of the temperature detection component and regulate the heating component.

[0100] First, see Figure 5 and Figure 6 , execute step Sa, wherein, Figure 6 Display as Figure 5 This embodiment provides another wafer cleaning device, the wafer cleaning device comprising:

[0101] Cavity 210;

[0102] A carrying platform 220, wherein the carrying platform 220 is disposed in the cavity 210 and is used for carrying the wafer to be cleaned;

[0103] A liquid supplying member 230, wherein the liquid supplying member 230 is disposed in the cavity 210 and located above the carrier 220, and is used for providing cleaning liquid to the wafer to be cleaned;

[0104] A liquid supply member housing 280, wherein the liquid supply member housing 280 is disposed in the cavity 210 and is located outside the liquid supply member 230, and an accommodating space is provided between an outer wall of the liquid supply member 230 and an inner wall of the liquid supply member housing 280;

[0105] A heat insulating member 290, wherein the heat insulating member 290 is disposed in the accommodating space and covers the liquid supply member 230;

[0106] A heating element 240, wherein the heating element 240 is disposed in the accommodating space and between the heat insulating element 290 and the liquid supply element housing 280, and is used to provide a heat source to the liquid supply element housing 280;

[0107] A temperature detection member 250, wherein the temperature detection member 250 is disposed in the cavity 210 and is used to detect the temperature of the liquid supply member housing 280;

[0108] The controller 270 communicates with the heating element 240 and the temperature detection element 250 .

[0109] The wafer cleaning device of this embodiment can effectively heat the liquid supply component 230 through the setting of the heating component 240, thereby effectively preventing the formation of ammonium fluoride crystals; the setting of the temperature detection component 250 and the controller 270 can realize automatic and convenient temperature control; the setting of the liquid supply component housing 280 can effectively protect the liquid supply component 230, thereby avoiding the reaction between the liquid supply component 230 and ammonium fluoride crystals; the setting of the heat insulating component 290 can avoid the influence of heat on the cleaning liquid in the liquid supply component 230. For example, during the temperature control process, due to the setting of the heat insulating component 290, the temperature can be controlled simultaneously during the wafer cleaning process, thereby timely and effectively avoiding the formation of ammonium fluoride crystals.

[0110] Furthermore, the wafer cleaning device may further include a cooling element 260 , and the cooling element 260 is disposed in the cavity 110 to provide a cold source.

[0111] Specifically, when the cooling component 260 is provided, the cooling component 260 can be used to promptly and effectively cool the liquid supply component housing 280, thereby conveniently regulating the temperature of the liquid supply component housing 280, reducing the time required for cooling, and timely adjusting the process steps.

[0112] Among them, the difference between this embodiment and Embodiment 1 lies in: in the wafer cleaning device, the arrangement of the liquid supply part shell 280 and the heat insulation part 290, the specific structure and effect of the wafer cleaning device and the wafer cleaning method can all be referred to Embodiment 1, which will not be repeated here, and only the differences will be introduced below.

[0113] As an example, the liquid supply member housing 280 may include a metal housing, and the metal housing may include a stainless steel housing.

[0114] Specifically, when the liquid supply part housing 280 is made of a stainless steel housing, it is convenient for temperature conduction, so that the liquid supply part 230 is heated more evenly and cooled more quickly, and the stainless steel housing has good corrosion resistance, which can reduce the probability of metal pollutants. The specific type of the metal housing is not excessively limited here. Of course, according to needs, the liquid supply part housing 280 can also adopt an organic housing with good corrosion resistance, such as a PC housing, a PP housing, a PEEK housing, and a PFA housing.

[0115] As an example, when the liquid supply part shell 280 adopts the metal shell, the periphery of the metal shell may also be covered with a passivation layer (not shown), and the passivation layer may include a single layer or a combination of PC material layers, PP material layers, PEEK material layers and PFA material layers.

[0116] Specifically, when the periphery of the metal shell has the corrosion-resistant and relatively stable passivation layer, the corrosion-resistant and relatively stable passivation layer can protect the heating element 240 and the liquid supply element 230 to prevent the crystallization of ammonium fluoride from reacting with it, thereby reducing the probability of metal contamination, further improving product quality and extending the life of the equipment. Regarding the selection of the passivation layer, it can include a single layer or a combination of a PC material layer, a PP material layer, a PEEK material layer, and a PFA material layer that are corrosion-resistant and relatively stable, and can be selected according to needs.

[0117] Next, step Sb is performed to place the wafer to be cleaned on the carrier 220 .

[0118] Specifically, the size of the wafer to be cleaned may include 6 inches, 8 inches, 12 inches, etc., which are not limited here. The type of the carrier 220 may include an electrostatic adsorption carrier or a vacuum adsorption carrier, which are not limited here.

[0119] Next, execute step Sc to start the wafer cleaning device.

[0120] Wherein, when starting the wafer cleaning device, the following steps may be included:

[0121] Sc-1: Start the liquid supply part 230 to provide cleaning liquid to the wafer to be cleaned;

[0122] Sc-2: starting the heating element 240 to provide a heat source to the liquid supply element housing 280;

[0123] Sc-3: Start the temperature detection component 250 to detect the temperature of the liquid supply component housing 280;

[0124] Sc-4: Start the controller 270 to obtain the detection information of the temperature detection element 250 and regulate the heating element 240.

[0125] In this embodiment, due to the provision of the thermal insulation member 290, temperature control can be performed simultaneously during the wafer cleaning process, that is, step Sc-2 can be performed while step Sc-1 is performed, thereby timely and effectively avoiding the generation of ammonium fluoride crystals.

[0126] Among them, step Sc-3 and step Sc-4 can be started at the same time as step Sc-2, so as to monitor and control the temperature as soon as possible. The specific operation and process of step Sc are not limited thereto.

[0127] Furthermore, when the wafer cleaning device is provided with the cooling component 260, it also includes a step Sc-5 of starting the cooling component 260 after the step Sc-4.

[0128] Furthermore, as required, the method may include repeating step Sb and step Sc to achieve continuous cleaning of multiple wafers.

[0129] In summary, the wafer cleaning method of the present invention provides a wafer cleaning device, and provides cleaning liquid to the wafer to be cleaned through a liquid supply part; a heat source can be effectively provided through a heating part to effectively prevent the formation of ammonium fluoride crystals; an automatic and convenient temperature control can be achieved through a temperature detection part and a controller; rapid cooling can be achieved through a cooling part to improve the timeliness; the reaction of ammonium fluoride crystals with metal materials can also be avoided through a passivation layer, reducing the probability of metal impurities; the liquid supply part can be effectively protected by a liquid supply part housing to avoid the reaction of the liquid supply part with ammonium fluoride crystals; the influence of heat on the cleaning liquid in the liquid supply part can be avoided through a heat insulation part, and the temperature can be regulated simultaneously during the wafer cleaning process, so as to timely and effectively avoid the generation of ammonium fluoride crystals. Therefore, the wafer cleaning method of the present invention can improve the timeliness, and can improve the product capacity and quality.

[0130] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A wafer cleaning method, characterized in that: The following steps are involved: S-1: Provide a wafer cleaning device, the wafer cleaning device comprising a chamber, a carrier, a liquid supply component, a heating component, a temperature detection component and a controller; wherein the liquid supply component is arranged in the chamber and located above the carrier; the heating component is arranged outside the liquid supply component; the temperature detection component is arranged in the chamber; the controller communicates with the heating component and the temperature detection component; S-2: placing the wafer to be cleaned on the carrier; S-3: Start the wafer cleaning device, including starting the liquid supply component to provide cleaning liquid to the wafer to be cleaned; starting the heating component to provide a heat source to the liquid supply component; starting the temperature detection component to detect the temperature of the liquid supply component; starting the controller to obtain the detection information of the temperature detection component and regulate the heating component.

2. A wafer cleaning method, characterized in that: The following steps are involved: Sa: Provide a wafer cleaning device, the wafer cleaning device includes a cavity, a carrier, a liquid supply component, a liquid supply component shell, a heat insulating component, a heating component, a temperature detection component and a controller; wherein the liquid supply component is arranged in the cavity and is located above the carrier; the liquid supply component shell is arranged in the cavity and is located outside the liquid supply component, and there is a accommodating space between the outer wall of the liquid supply component and the inner wall of the liquid supply component shell; the heat insulating component is arranged in the accommodating space and covers the liquid supply component; the heating component is arranged in the accommodating space and is located between the heat insulating component and the liquid supply component shell; the temperature detection component is arranged in the cavity; the controller communicates with the heating component and the temperature detection component; Sb: placing the wafer to be cleaned on the carrier; Sc: Starting the wafer cleaning device, including starting the liquid supply component to provide cleaning liquid to the wafer to be cleaned; starting the heating component to provide a heat source to the liquid supply component shell; starting the temperature detection component to detect the temperature of the liquid supply component shell; starting the controller to obtain the detection information of the temperature detection component and regulate the heating component.

3. The wafer cleaning method according to claim 2, characterized in that: In step Sc, while the liquid supply component provides cleaning liquid to the wafer to be cleaned, the heating component is started to provide a heat source to the housing of the liquid supply component.

4. The wafer cleaning method according to claim 1 or 2, characterized in that: The temperature range of the heat source provided by the heating element is above 45°C.

5. The wafer cleaning method according to claim 1 or 2, characterized in that: The wafer cleaning device further comprises a cooling element, which is disposed in the cavity, provides a cold source through the cooling element, and communicates with the controller; The cooling element includes one or a combination of an air-cooling cooling element and a liquid-cooling cooling element, wherein the air-cooling cooling element includes a nitrogen cooling element or an inert gas cooling element.

6. The wafer cleaning method according to claim 1 or 2, characterized in that: The heating element includes one or a combination of a heating coil, a heating wire and a heating film.

7. The wafer cleaning method according to claim 1 or 2, characterized in that: The liquid supply component includes a liquid supply pipe and a liquid supply nozzle connected with the liquid supply pipe, and the heating component covers the liquid supply pipe and the liquid supply nozzle.

8. The wafer cleaning method according to claim 1 or 2, characterized in that: The wafer cleaning device includes N>1 temperature detection components, and the N temperature detection components are arranged at equal intervals.

9. The wafer cleaning method according to claim 1 or 2, characterized in that: The controller communicates by wired communication or wireless communication or a combination thereof.

10. The wafer cleaning method according to claim 1 or 2, characterized in that: A passivation layer is also arranged on the periphery of the liquid supply part, and the passivation layer includes a single layer or a combination of a PC material layer, a PP material layer, a PEEK material layer and a PFA material layer.

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