Semiconductor process chamber and drainage method

Abstract

The invention provides a semiconductor process chamber and a liquid discharge method. The semiconductor process chamber comprises a first temperature control main body arranged on the outer wall of a chamber main body; the first temperature control body is internally provided with a temperature control channel used for heat exchange liquid to flow, the temperature control channel is provided with a plurality of first pipe sections and second pipe sections, the two ends of each first pipe section are connected with the pipe sections higher than the ends of the first pipe section respectively, and the second pipe section is located at the bottommost end of the temperature control channel and extends horizontally. The first temperature control main body is also internally provided with an auxiliary liquid discharge channel which is communicated with the plurality of first pipe sections and the second pipe sections; the semiconductor process chamber further comprises a switch assembly arranged in the auxiliary liquid discharge channel. The switch assembly is used for blocking liquid from flowing in the auxiliary liquid drainage channel in a first state; the switch assembly is used for enabling liquid in the multiple first pipe sections to flow into the second pipe section through the auxiliary liquid drainage channel in the second state, and therefore the situation that accumulated liquid is solidified in the low-temperature environment, and consequently the multiple first pipe sections are damaged is avoided.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular relates to a semiconductor process chamber and a liquid discharge method. Background Art

[0002] Since the etching speed and depth of the etching process are extremely sensitive to the process temperature, when the process is performed inside the process chamber, it is usually necessary to set up a process chamber outside the process chamber to adjust the process temperature in real time. Existing process chambers usually use liquids such as deionized water for temperature control. Specifically, deionized water flow channels of various shapes are set outside the process chamber to use deionized water to adjust the process chamber temperature.

[0003] However, in order to ensure the uniform distribution of the deionized water flow channel, the deionized water flow channel is often designed to have multiple bends such as a spiral or S shape, which makes it difficult to drain the accumulated water inside the flow channel. Furthermore, in cold weather, if the machine needs to be shut down for maintenance, the accumulated liquid in the flow channel will freeze, and the expansion caused by the freezing of the accumulated liquid and the low local temperature may damage the structure of the process chamber, thereby reducing the service life of the process chamber. Summary of the invention

[0004] The present invention at least partially solves the problem that heat exchange fluid in the existing temperature control flow channel is difficult to drain completely, and provides a semiconductor process chamber and a liquid drainage method.

[0005] An embodiment of the present invention provides a semiconductor process chamber; the chamber comprises:

[0006] Chamber body;

[0007] A temperature control assembly, comprising a first temperature control body disposed on the outer wall of the chamber body; the first temperature control body has a temperature control channel for the flow of heat exchange fluid, and the temperature control channel has a plurality of first pipe segments and a second pipe segment, both ends of the first pipe segment are respectively connected to pipe segments higher than the end thereof, and the second pipe segment is located at the bottom end of the temperature control channel and extends horizontally; the first temperature control body also has an auxiliary drainage channel, and the auxiliary drainage channel is connected to the plurality of first pipe segments and the second pipe segments;

[0008] A switch assembly is arranged in the auxiliary drainage channel; the switch assembly has a first state and a second state; in the first state, the switch assembly is used to block the liquid from flowing in the auxiliary drainage channel; in the second state, the switch assembly is used to allow the liquid in the plurality of first pipe segments to flow into the second pipe segment through the auxiliary drainage channel.

[0009] Optionally, the auxiliary drainage channel is located on the side of the plurality of first pipe segments and the second pipe segments; the auxiliary drainage channel includes a plurality of connecting segments and a plurality of closed segments arranged alternately; the plurality of connecting segments are connected to the plurality of first pipe segments and the second pipe segments in a one-to-one correspondence; the plurality of closed segments are located between two adjacent first pipe segments and between the second pipe segment and the first pipe segment adjacent thereto;

[0010] When the switch assembly is in the first state, the switch assembly is blocked in each of the closed sections; when the switch assembly is in the second state, the switch assembly connects all of the communicating sections with the corresponding closed sections to connect the auxiliary drainage channels.

[0011] Optionally, the switch assembly includes a switch rod; the switch rod is arranged inside the auxiliary liquid discharge channel and extends along the auxiliary liquid discharge channel;

[0012] The switch rod has at least one convex portion and at least one concave portion, and the convex portions and the concave portions are alternately arranged along the length direction of the switch rod; the convex portions are arranged in one-to-one correspondence with the connecting sections, and the length of the convex portions is less than the length of the corresponding connecting sections;

[0013] The outer peripheral surface of the convex portion can be sealed with the inner wall of the closed section; the outer peripheral surface of the concave portion is spaced apart from the inner wall of the closed section;

[0014] When the switch assembly is in the first state, each of the protrusions is sealed and matched with the inner wall of the corresponding closed section to prevent the liquid in the corresponding first pipe section from flowing into the connecting section;

[0015] When the switch assembly is in the second state, the convex portion is located in the corresponding connecting section, and the concave portion is located in the closed section, so that the liquid in the first pipe section flows into the connecting section.

[0016] Optionally, the first pipe segment extends along a first direction; the temperature control channel further comprises a plurality of third pipe segments extending along a second direction and a plurality of fourth pipe segments extending along the first direction;

[0017] A plurality of the third pipe segments and a plurality of the fourth pipe segments can be connected with a plurality of the first pipe segments and the second pipe segments to form one temperature control channel;

[0018] A plurality of the first pipe sections are distributed at intervals along the second direction, and each of the first pipe sections is connected to two third pipe sections higher than both ends thereof;

[0019] The plurality of fourth pipe segments are spaced apart along the second direction, and the fourth pipe segment is connected with two third pipe segments lower than both ends thereof, or is respectively connected with a third pipe segment higher than one end thereof and a fourth pipe segment lower than one end thereof.

[0020] Optionally, the first direction is a horizontal direction; the second direction is a vertical direction;

[0021] The auxiliary liquid discharge pipe extends in a vertical direction.

[0022] Optionally, a mounting through hole communicating with the auxiliary drainage channel is further provided on the bottom surface of the first temperature control body, the mounting through hole is coaxially arranged with the auxiliary drainage channel, and the hole wall of the mounting through hole is sealed with the outer periphery of the switch rod; the switch rod extends to the outside of the first temperature control body through the mounting through hole;

[0023] The semiconductor process chamber further comprises a driving assembly; the driving assembly is connected to the end of the switch rod and is used for driving the switch rod to slide inside the auxiliary drainage channel.

[0024] Optionally, the temperature control channel has a first port and a second port, and the first port and the second port are both connected to an external liquid source; the first port is arranged at the end of the second pipe section;

[0025] The semiconductor process chamber also includes a control component; wherein the control component is used to control the first port to allow the heat exchange liquid to enter during the temperature control stage and to stop allowing the heat exchange liquid to enter during the first and second drainage stages, and to control the second port to discharge the heat exchange liquid during the temperature control stage and the first drainage stage; the control component is also used to control the drive component to drive the switch rod to slide to the first state during the first drainage stage, and to control the drive component to drive the switch rod to slide to the second state during the second drainage stage.

[0026] Optionally, the first port is connected to the external liquid source and the external gas source respectively through a first three-way valve, and the second port is connected to the external liquid source and the external gas source respectively through a second three-way valve;

[0027] The control component is also used to control the first three-way valve to connect the first port with the external gas source in the first liquid discharge stage, and control the second three-way valve to connect the second port with the external liquid source, so as to use gas to push the liquid inside the temperature control channel to be discharged; and is also used to control the second three-way valve to connect the second port with the external gas source in the second liquid discharge stage, so as to use gas to push the liquid inside the second pipe section to be discharged.

[0028] Optionally, a detection component is further included; the detection component includes two flow detectors connected to the first port and the second port respectively; the two flow detectors are used to detect the liquid flow at the first port and the second port respectively, and send the detection results to the control component;

[0029] The control component is also used to continuously determine whether the liquid flow rate of the second port is less than or equal to a first preset flow rate value during the first liquid discharge stage; if so, it is determined that the first liquid discharge stage is completed;

[0030] The control component is also used to continuously determine whether the liquid flow rate of the first port is less than or equal to a second preset flow rate value during the second liquid discharge stage; if so, it is determined that the second liquid discharge stage is completed.

[0031] Optionally, the detection component further includes two humidity detectors respectively arranged at the first port and the second port of the temperature control channel; the two humidity detectors are used to detect the humidity at the first port and the second port respectively, and send the detection results to the control component;

[0032] The control component is also used to control the second three-way valve to connect the second port with the external air source after the second drainage stage is completed, so as to dry the temperature control channel by conveying gas inside the temperature control channel; and calculate the humidity difference between the first port and the second port, and continuously determine whether the humidity difference is less than or equal to a preset humidity difference; if so, control the second three-way valve to disconnect the second port from the external air source.

[0033] Optionally, it further comprises a heating component, wherein the heating component is connected to the external gas source and is used to heat the gas output by the external gas source;

[0034] The control component is also used to control the heating component to turn on when the temperature control channel is connected to the external air source; and to control the heating component to turn on and off after the temperature control channel is disconnected from the external air source.

[0035] Optionally, the number of the first temperature control bodies is two; the two first temperature control bodies are respectively located on two opposite sides of the chamber body;

[0036] The temperature control assembly further includes a second temperature control body, which is disposed on the outer wall of the chamber body and is adjacent to the two first temperature control bodies; the second temperature control body has an auxiliary temperature control channel;

[0037] The auxiliary temperature control channel includes a fifth pipe segment, a sixth pipe segment and a seventh pipe segment; one end of the fifth pipe segment and the sixth pipe segment are respectively connected to the second ports of the two temperature control channels, and the other ends are connected to one end of the seventh pipe segment; the other end of the seventh pipe segment is connected to the external liquid source.

[0038] As another technical solution, an embodiment of the present invention further provides a liquid discharge method, which is applied to the semiconductor process chamber as described above; the method comprises:

[0039] In the first liquid discharge stage, the switch assembly of the semiconductor process chamber is controlled to be in a first state; the heat exchange liquid is controlled to be discharged in a preset circulation direction in the temperature control channel;

[0040] In the second drainage stage, the switch assembly is controlled to be in the second state; and the remaining heat exchange fluid is controlled to be drained in the temperature control channel in a direction opposite to the preset circulation direction.

[0041] Optionally, controlling the heat exchange fluid to be normally discharged in the temperature control channel in a circulation direction includes: controlling the first port of the temperature control channel to be connected only to an external gas source, and controlling the second port of the temperature control channel to be connected only to an external liquid source, so as to use gas to push the liquid in the temperature control channel to be discharged through the second port;

[0042] Controlling the heat exchange liquid to discharge in the temperature control channel in a direction opposite to the circulation direction includes: controlling the first port to be connected only to the external liquid source, and controlling the second port to be connected only to the external gas source, so as to use gas to push the liquid inside the second pipe section to discharge.

[0043] Optionally, after the second drainage stage is completed, a drying stage is further included, and the drying stage includes:

[0044] Controlling the second port to communicate with the external gas source so as to dry the temperature control channel by delivering gas inside the temperature control channel;

[0045] Continuously detect the humidity at the first port and the second port, calculate the humidity difference at the first port and the second port, and continuously determine whether the humidity difference is less than or equal to a preset humidity difference value; if so, control the second port to be disconnected from the external air source.

[0046] The present invention has the following beneficial effects:

[0047] The semiconductor process chamber provided by the embodiment of the present invention is provided with a temperature control channel and an auxiliary drainage channel in the first temperature control body, and the auxiliary drainage channel is connected with a plurality of first pipe sections in the temperature control channel where liquid is easily accumulated, and the two ends of the first pipe section are respectively connected with pipe sections higher than the ends thereof; moreover, the auxiliary drainage channel is also connected with the second pipe section at the bottom end of the temperature control channel, so that the liquid accumulated in the plurality of first pipe sections can flow downward to the second pipe section through the auxiliary drainage channel. Moreover, the process chamber is also provided with a switch assembly, which has a first state and a second state; in the first state, the switch assembly is used to block the liquid from flowing in the auxiliary drainage channel, so that the heat exchange liquid can flow normally inside the temperature control channel during the temperature control stage; in the second state, the switch assembly is used to allow the liquid in the plurality of first pipe sections to flow into the second pipe section through the auxiliary drainage channel, so as to avoid the solidification of the accumulated liquid in a low temperature environment and damage to the plurality of first pipe sections. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Figure 1 It is a simplified structural diagram of an existing semiconductor process chamber;

[0049] Figure 2 A schematic diagram of the structure of a semiconductor process chamber proposed in an embodiment of the present invention (with the chamber body hidden);

[0050] Figure 3 A partial cross-sectional schematic diagram of a first temperature control body provided in an embodiment of the present invention;

[0051] Figure 4 This is a schematic structural diagram of a first temperature control body proposed in an embodiment of the present invention;

[0052] Figure 5 for Figure 3 A schematic partial cross-sectional view in the AA direction;

[0053] Figure 6 A partial cross-sectional schematic diagram of a first temperature control body and a switch assembly provided in an embodiment of the present invention;

[0054] Figure 7 A schematic diagram of the structure of a switch rod provided in an embodiment of the present invention;

[0055] Figure 8 This is a schematic diagram of the structure of the second temperature control body proposed in an embodiment of the present invention;

[0056] Fig. 9 A schematic diagram of the control principle of a control component of a semiconductor process chamber is provided for an embodiment of the present invention. DETAILED DESCRIPTION

[0057] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0058] It should be understood that the specific embodiments and drawings described herein are only used to explain the present invention rather than to limit the present invention.

[0059] It can be understood that, in the absence of conflict, the various embodiments of the present invention and the various features therein can be combined with each other.

[0060] It can be understood that, for the convenience of description, the drawings of the present invention only show the parts related to the embodiments of the present invention, while the parts unrelated to the embodiments of the present invention are not shown in the drawings.

[0061] It can be understood that, in the absence of conflict, the functions and steps marked in the flowcharts and block diagrams of the embodiments of the present invention may occur in an order different from that marked in the drawings.

[0062] In the prior art, a temperature control channel 01 for deionized water to flow is usually provided outside the chamber of a semiconductor process chamber, so as to realize temperature control of the process chamber by using deionized water. Figure 1 As an example, it shows a common specific setting method of the temperature control channel 01. Specifically, the temperature control channel 01 includes a flow balancing groove 011 arranged at the upper part of the cavity, at least two serpentine flow channels 012 arranged on the side wall of the cavity, and a confluence cavity at the bottom of the cavity (not shown in the figure). Figure 1 As shown, the serpentine flow channel 012 is generally in an "S" shape, and each serpentine flow channel 012 allows water to flow in through the water inlet 012a and discharges water through the water outlet 012b. The parallel extending pipe section 012c in the serpentine flow channel 012, that is, the low-lying area in the serpentine flow channel 012, is often difficult to drain by pumping due to the gravity of the deionized water itself and the obstruction of the pipe sections on both sides, resulting in the accumulation of deionized water in the low-lying area of ​​the serpentine flow channel 012. When the ambient temperature is low, the accumulated deionized water is easy to freeze, which in turn causes damage to the equipment.

[0063] In order to solve the above technical problems, a semiconductor process chamber is provided, which is applied to etching equipment, for example. The semiconductor process chamber includes a chamber body, a temperature control component and a switch component.

[0064] The chamber body mainly includes an outer wall and an inner cavity, wherein the inner cavity is used for performing semiconductor processes.

[0065] like Figure 2 and Figure 3As shown, the temperature control assembly includes a first temperature control body 1 arranged on the outer wall of the chamber body. The first temperature control body 1 has a temperature control channel 11 for the flow of heat exchange fluid. Specifically, the heat exchange fluid is a liquid medium such as deionized water or perfluoropolyether. The temperature control channel 11 has a plurality of first pipe segments 111 and a second pipe segment 112; wherein, the two ends of the first pipe segment 111 are respectively connected to the pipe segments higher than its ends, which causes the first pipe segment 111 to be a low-lying area where liquid accumulation is prone to occur. The second pipe segment 112 is located at the bottom end of the temperature control channel 11 and extends in a horizontal direction. The first temperature control body 1 also has an auxiliary drainage channel 12, which is connected to the second pipe segment 112 and the plurality of first pipe segments 111, that is, it is connected to the bottommost horizontal pipe segment and the pipe segment where liquid accumulation is prone to occur.

[0066] like Figure 4 As shown, the switch assembly 2 is arranged in the auxiliary drainage channel 12, and it has a first state and a second state; specifically, when the switch assembly 2 is in the first state, the switch assembly 2 is used to block the liquid from flowing in the auxiliary drainage channel 12, so that the heat exchange liquid can flow normally inside the temperature control channel 11 during the temperature control stage; when the switch assembly 2 is in the second state, the switch assembly 2 is used to allow the liquid in the multiple first pipe segments 111 to flow into the second pipe segment 112 through the auxiliary drainage channel, so that the liquid that is difficult to be discharged from the first pipe segment 111 is discharged to the second pipe segment 112 via the auxiliary drainage channel 12, thereby avoiding the solidification of the accumulated liquid in a low temperature environment and causing damage to the first pipe segment.

[0067] In some embodiments, the auxiliary drainage channel 12 is located on the side of the first pipe section 111 and the second pipe section 112; specifically, Figure 5 As shown, the auxiliary drainage channel 12 is, for example, located between the temperature control channel 11 and the outer wall of the chamber body. The auxiliary drainage channel 12 includes a plurality of connecting sections 121 and a plurality of closed sections 122 arranged alternately; the plurality of connecting sections 121 are connected to a plurality of first pipe sections 111 and second pipe sections 112 in one-to-one correspondence; the plurality of closed sections 122 are located between two adjacent first pipe sections 111 and between a second pipe section 112 and a first pipe section 111 adjacent thereto. When the switch assembly 2 is in the first state, the switch assembly 2 is used to block in each closed section 122 to prevent the liquid in the corresponding first pipe section 111 from flowing into the closed section 122, so that the heat exchange liquid can flow normally in the temperature control channel 11 to achieve temperature control of the chamber body; when the switch assembly 2 is in the second state, the switch assembly 2 connects all the connecting sections 121 with the corresponding closed sections 122 to connect the auxiliary drainage channel, so that the multiple first pipe sections 111 and the second pipe sections 112 are connected to the auxiliary drainage channel 12, so that the liquid accumulated in the multiple first pipe sections 111 flows downward along the auxiliary drainage channel 12 to the second pipe section 112.

[0068] In some embodiments, Figure 7 As shown, the switch assembly 2 includes a switch rod 21. The switch rod 21 is disposed inside the auxiliary liquid discharge channel 12 and extends along the auxiliary liquid discharge channel 12. The switch rod 21 has at least one convex portion 211 and at least one concave portion 212, and the convex portions 211 and the concave portions 212 are alternately arranged along the length direction of the switch rod 21.

[0069] like Figure 5 and Figure 6 As shown, the convex portion 211 is arranged in one-to-one correspondence with the connecting section 121, and the length of the convex portion 211 is less than the length of the corresponding connecting section 121. The outer peripheral surface of the convex portion 211 can be sealed with the inner wall of the closed section 122. Specifically, the cross section of the convex portion 211 is the same as the cross section of the closed section 122. The outer peripheral surface of the concave portion 212 is arranged at intervals with the inner wall of the closed section 122, so that when the concave portion 212 moves into the closed section 122, a gap can be formed between it and the inner wall of the closed section 122.

[0070] When the switch assembly 2 is in the first state, each convex portion 211 is sealed with the inner wall of the corresponding closed section 122 to block the corresponding closed section 122, thereby preventing the liquid in the corresponding first pipe section 111 from flowing into the connecting section 121, ensuring that the heat exchange liquid does not flow into the second pipe section 112 through the auxiliary drainage channel 12. When the switch assembly 2 is in the second state, the convex portion 211 is located in the corresponding connecting section 121, and the concave portion 212 is located in the closed section 122. Since the length of the convex portion 211 is less than the length of the connecting section 121, Figure 6 As shown, the upper and lower ends of the connecting section 121 will not be blocked, and the connecting section 121 can be connected with the gap formed between the recess 212 and the inner wall of the closed section 122, so as to utilize the gap to connect all adjacent connecting sections 121 in sequence, and then connect all the first pipe sections 111 with the second pipe section 112, so that the liquid stored in all the first pipe sections 111 can flow out from the corresponding connecting section 121 and flow into the second pipe section 112 through the gap between the recess 212 and the inner wall of the auxiliary drainage channel 12.

[0071] It should be noted that although Figure 3 Only one auxiliary drainage channel 12 is shown, but the number of auxiliary drainage channels 12 in this embodiment is not limited to one, and accordingly, the number of switch rods 21 is not limited to one. For example, there are multiple auxiliary drainage channels 12, and each auxiliary drainage channel 12 is connected to a section of the first pipe segment 111; or, a part of the auxiliary drainage channels 12 is connected to a part of the first pipe segment 111, and another part of the auxiliary drainage channels 12 is connected to the remaining first pipe segment 111.

[0072] In some embodiments, Figure 2 and Figure 4As shown, the first pipe segment 111 extends along the first direction; the temperature control channel also has a plurality of third pipe segments 113 extending along the second direction and a plurality of fourth pipe segments 114 extending along the first direction. The plurality of third pipe segments 113 and the plurality of fourth pipe segments 114 can be connected with the plurality of first pipe segments 111 and the second pipe segments 112 to form a temperature control channel. In some specific embodiments, the first direction is a horizontal direction; the second direction is a vertical direction; accordingly, the auxiliary drainage pipe 12 extends along the vertical direction so that the accumulated liquid can flow to the second pipe segment 112 at the bottom under the action of gravity.

[0073] The plurality of first pipe segments 111 are spaced apart along the second direction, and each first pipe segment 111 is connected to two third pipe segments 113 higher than both ends thereof. The plurality of fourth pipe segments 114 are spaced apart along the second direction, and the fourth pipe segments 114 are connected to two third pipe segments 113 lower than both ends thereof, or are respectively connected to a third pipe segment 113 higher than one end thereof and a fourth pipe segment 114 lower than one end thereof. In this way, the plurality of first pipe segments 111, the second pipe segment 112, the plurality of third pipe segments 113, and the plurality of fourth pipe segments 114 can be connected as follows: Figure 2 and Figure 4 A spiral temperature control channel 11 is shown.

[0074] In some embodiments, a mounting through hole 13 connected to the auxiliary drainage channel 12 is further provided on the bottom surface of the first temperature control body 1. The mounting through hole 13 is coaxially arranged with the auxiliary drainage channel 12, and the hole wall of the mounting through hole 13 is sealed with the outer periphery of the switch rod 21, so that the switch rod 21 can extend from the mounting through hole 13 to the outside of the first temperature control body 1. The semiconductor process chamber also includes a driving component 6; the driving component 6 is connected to one end of the switch rod 21 extending to the outside of the first temperature control body 1, and is used to drive the switch rod 21 to slide inside the auxiliary drainage channel 12, so as to control the switch rod 21 to switch between the first state and the second state.

[0075] In some specific embodiments, the driving assembly 6 is, for example, an electric cylinder, which includes a driving rod and a motor; wherein the driving rod is connected to the bottom end of the switch rod 21; the motor is used to provide a linear lifting driving force for the driving rod to drive the driving rod to move up and down, thereby driving the switch rod 21 to move up and down inside the auxiliary drainage channel 12, so as to drive the switch rod 21 to switch between the first state and the second state. Figure 2 As shown, the motor is installed below the first temperature control body 1 through a fixing bracket, for example.

[0076] In other embodiments, the operator may manually drive the switch rod 21 to move up and down in the auxiliary liquid discharge pipe to control the switch rod 21 to switch between the first state and the second state.

[0077] In some embodiments, Fig. 9As shown, the temperature control channel 11 has a first port 11A and a second port 11B, and the first port 11A and the second port 11B are both connected to an external liquid source to form a circulation passage between the temperature control channel and the external liquid source, so as to circulate the heat exchange liquid to control the temperature of the chamber body. The first port 11A is set at the end of the second pipe section 112, that is, the first port 11A is located at the bottom side of the temperature control channel 11. Moreover, the second port 11B can be set in a pipe section at the top, that is, the second port 11B is located at the top side of the temperature control channel 11; Figure 2 Taking the temperature control channel 11 as an example, the second port 11B is, for example, disposed at the top end of a third pipe section 113 .

[0078] The semiconductor process chamber also includes a control component 4. The control component 4 is used to control the first port 11A to pass the heat exchange liquid in the temperature control stage, and control the second port 11B to discharge the heat exchange liquid in the temperature control stage; the control component 4 is also used to control the first port 11A to stop passing the heat exchange liquid in the first liquid discharge stage, and control the second port 11B to discharge the heat exchange liquid in the first liquid discharge stage, and control the drive component 6 to drive the switch rod 21 to slide to the first state to ensure that the various pipe sections of the temperature control channel 11 are normally connected, so that most of the heat exchange liquid in the temperature control channel 11 is discharged; the control component is also used to control the first port 11A to stop passing the heat exchange liquid in the second liquid discharge stage, and control the drive component 6 to drive the switch rod 21 to slide to the second state in the second liquid discharge stage, so that the accumulated liquid in the multiple first pipe sections 111 flows into the second pipe section 112 through the auxiliary liquid discharge channel 12.

[0079] In some embodiments, the first port 11A of the temperature control channel 11 is connected to the external liquid source 7 and the external gas source 8 respectively through the first three-way valve 13, and the second port 11B is connected to the external liquid source 7 and the external gas source 8 respectively through the second three-way valve 14. The control component 4 is also used to control the first three-way valve 13 to connect the first port 11A with the external gas source 8 in the first liquid discharge stage, and control the second three-way valve 14 to connect the second port 11B with the external liquid source 7, so that the gas flows into the temperature control channel 11 from the first port 11A, so that the gas is used to push the liquid inside the temperature control channel 11 to be discharged from the second port 11B. The control component 4 is also used to control the second three-way valve 14 to connect the second port 11B with the external gas source 8 in the second liquid discharge stage, so that the gas is used to push the liquid inside the second pipe section 112 to be discharged, so as to discharge the accumulated liquid in the temperature control channel 11.

[0080] Alternatively, as a simplified drainage method, a through hole connected to the second pipe segment 112 can be opened on the bottom surface of the first temperature control body 1 as a drainage port of the second pipe segment 112, and a sealing plug can be installed in the through hole to control the opening and closing of the drainage port of the second pipe segment 112 by plugging and unplugging the sealing plug, so that the accumulated liquid in the temperature control channel 11 can be manually discharged. However, it should be noted that if the heat exchange liquid uses a volatile or toxic liquid such as perfluoropolyether, the aforementioned simplified drainage method cannot be used, because the temperature control channel 11 cannot be isolated from the external environment during the plugging and unplugging of the sealing plug, which easily leads to the escape of volatile gases.

[0081] Furthermore, in some embodiments, the semiconductor process chamber further includes a detection component. The detection component includes two flow detectors 5 connected to the first port 11A and the second port 11B respectively; the two flow detectors 5 are used to detect the liquid flow at the first port 11A and the second port 11B respectively, and send the detection results to the control component 4.

[0082] The control component 4 is used to continuously determine whether the liquid flow rate of the second port 11B is less than or equal to the first preset flow rate value in the first liquid discharge stage, that is, to determine whether the real-time liquid discharge flow rate is less than or equal to the first preset flow rate value; if so, it is determined that the first liquid discharge stage is completed; if not, the liquid discharge is continued. The control component 4 is also used to continuously determine whether the liquid flow rate of the first port 11A is less than or equal to the second preset flow rate value in the second liquid discharge stage, that is, to determine whether the real-time liquid discharge flow rate is less than or equal to the second preset flow rate value; if so, it is determined that the second liquid discharge stage is completed; if not, the liquid discharge is continued.

[0083] Further, in some embodiments, the detection component includes two humidity detectors (not shown in the figure) respectively arranged at the first port 11A and the second port 11B of the temperature control channel 11. The two humidity detectors are used to detect the humidity at the first port 11A and the second port 11B of the temperature control channel 11, respectively, and send the detection results to the control component 4.

[0084] The control component 4 is also used to control the first three-way valve 13 to connect the temperature control channel 11 with the external gas source 8 after the second liquid discharge stage is completed, so as to dry the temperature control channel 11 by conveying gas inside the temperature control channel 11, thereby further removing the liquid remaining in the temperature control channel 11. The control component 4 is also used to calculate the humidity difference between the humidity at the first port 11A and the humidity at the second port 11B, and continuously determine whether the humidity difference is less than or equal to a preset humidity difference; if so, it indicates that the liquid remaining in the temperature control channel 11 has reached a preset value, so the second three-way valve 14 is controlled to disconnect the second port 11B from the external gas source 8, so as to disconnect the temperature control channel 11 from the external gas source 8.

[0085] In some embodiments, the semiconductor process chamber further includes a heating component, which is connected to the external gas source 8 and is used to heat the gas output by the external gas source 8 to improve the drying effect of the gas on the liquid inside the temperature control channel 11. The control component 4 is also used to control the heating component to turn on after the temperature control channel 11 is connected to the external gas source 8; and to control the heating component to turn on and off after the temperature control channel 11 is disconnected from the external gas source 8.

[0086] In some embodiments, Figure 2 As shown, there are two first temperature control bodies 1; the two first temperature control bodies 1 are respectively located on opposite sides of the chamber body. The temperature control assembly also includes a second temperature control body 3, which is arranged on the outer wall of the chamber body and adjacent to the two first temperature control bodies 1; the second temperature control body 3 has an auxiliary temperature control channel 31.

[0087] like Figure 7 As shown, the auxiliary temperature control channel 31 includes a fifth pipe segment 311, a sixth pipe segment 312 and a seventh pipe segment 313. Among them, one end of the fifth pipe segment 311 and the sixth pipe segment 312 are respectively connected to the second ports 11B of the two temperature control channels 11, and the other ends are both connected to one end of the seventh pipe segment 313, that is, the fifth pipe segment 311, the sixth pipe segment 312 and the seventh pipe segment 313 can form a substantially "Y"-shaped pipeline. The seventh pipe segment 313 is connected to the external liquid source 7 so that the liquid in the fifth pipe segment 311 and the sixth pipe segment 312 are combined into one path.

[0088] Furthermore, in some embodiments, the auxiliary temperature control channel 31 further includes an eighth pipe section 314 and a ninth pipe section 315. Figure 8 As shown, one end of the eighth pipe segment 314 and the ninth pipe segment 315 are both connected to the external liquid source 7 , and the other end is respectively connected to the first port 11A of the temperature control channel 11 in the two first temperature control bodies 1 to transport heat exchange liquid to the two temperature control channels 11 .

[0089] In some specific embodiments, Figure 2 and Figure 8 As shown, the fifth pipe segment 311 and the sixth pipe segment 312 are located at the upper half of the second temperature control body 3, and the seventh pipe segment 313 is located at the lower half of the second temperature control body 3; the eighth pipe segment 314 and the ninth pipe segment 315 are located at the bottom end of the second temperature control body 3; accordingly, the positions of the first port 11A and the second port 11B of the two first temperature control bodies 1 also correspond to the positions of the fifth pipe segment 311 and the sixth pipe segment 312, the eighth pipe segment 314 and the ninth pipe segment 315.

[0090] In some specific embodiments, Figure 2As shown, the two first temperature control bodies 1 and the second temperature control body 3 are formed as one body and enclose a generally hollow cube, and the hollow part of the hollow cube is cylindrical to match the outer wall of the cylindrical chamber body. Moreover, the side of the hollow cube opposite to the second temperature control body 3 also has a hollow structure, which can be used to observe the chamber body process or to communicate with the film transmission port of the chamber body.

[0091] In some specific embodiments, Fig. 9 As shown, the external liquid source 7 includes a liquid reservoir 71, a two-way pump 72, a first liquid infusion pipeline 73, and a second liquid infusion pipeline 74. The liquid reservoir 71 is used to store heat exchange liquid; one end of the first liquid infusion pipeline 73 is connected to the liquid reservoir 71, and the other end is connected to the eighth pipe segment 314 and the ninth pipe segment 315 through a three-way joint, so as to be connected to the first ports 11A of the two temperature control channels 11 at the same time; one end of the second liquid infusion pipeline 74 is connected to the seventh pipe segment 313, and the other end is connected to the liquid reservoir 71, so that the second ports 11B of the two temperature control channels 11 are connected to the liquid reservoir 71; in this way, the first liquid infusion pipeline 73, the second liquid infusion pipeline 74, the two temperature control channels 11, and the liquid reservoir 71 can constitute a liquid circulation path, so as to realize the recycling of the heat exchange liquid.

[0092] The bidirectional pump 72 is disposed in the first infusion pipeline 73 to drive the heat exchange liquid to flow in the liquid circulation passage. Moreover, the controller can be used to control the opening and closing of the bidirectional pump 72, the pumping direction and the output pressure.

[0093] In some specific embodiments, the external gas source 8 includes a compressed air tank and a gas pipeline, wherein the output end of the compressed air tank is connected to one end of the gas pipeline, and the other end of the gas pipeline is connected to the first three-way valve 13 and the second three-way valve 14. Alternatively, the external gas source 8 may also be a factory gas supply pipeline.

[0094] Correspondingly, the above-mentioned heating component, for example, includes a heating belt, which is wound around the outer circumference of the gas pipeline or the factory gas supply pipeline to heat the gas transported to the inside of the temperature control channel 11, thereby improving the effect of drying the temperature control channel 11.

[0095] Based on the semiconductor process chamber described above, this embodiment further provides a liquid discharge method, which includes the following steps:

[0096] In the first liquid discharge stage, the switch assembly 2 is controlled to be in the first state; the heat exchange liquid is controlled to be discharged in the temperature control channel 1 in a preset circulation direction to discharge most of the heat exchange liquid;

[0097] In the second drainage stage, the switch assembly 2 is controlled to be in the second state; the remaining heat exchange fluid is controlled to be discharged in the temperature control channel 1 in a direction opposite to the preset circulation direction, so that the small amount of accumulated heat exchange fluid flows in the reverse direction and flows into the second pipe section 112.

[0098] Specifically, the preset circulation direction is the flow direction of the heat exchange fluid in the temperature control stage, for example, from the first port 11A to the second port 11B of the temperature control channel 1. Based on this, in some specific embodiments, the above-mentioned control of the heat exchange fluid to be normally discharged in the circulation direction in the temperature control channel includes the following steps:

[0099] The first port 11A of the temperature control channel is controlled to be connected only to an external gas source, and the second port 11B of the temperature control channel is controlled to be connected only to an external liquid source, so that the gas is used to push the liquid inside the temperature control channel to be discharged through the second port 11B.

[0100] Moreover, after the switch assembly 2 is controlled to be in the first state, the accumulated liquid in the plurality of first pipe sections 111 will flow downward into the second pipe section 112 through the auxiliary drainage pipe 12; therefore, the above-mentioned control of the heat exchange liquid to be discharged in the temperature control channel in a direction opposite to the circulation direction includes the following steps:

[0101] The first port 11A is controlled to be connected only to an external liquid source, and the second port 11B is controlled to be connected only to an external gas source, so that the gas is used to push the liquid inside the second pipe section 112 to be discharged, thereby discharging the accumulated liquid in the auxiliary drainage pipe 12 .

[0102] Furthermore, in some embodiments, the liquid discharge method further comprises:

[0103] In the first liquid discharge stage, the liquid flow rate at the second port 11B is continuously detected, and it is continuously determined whether the liquid flow rate at the first port 11A is less than or equal to the first preset flow rate value; if so, it is determined that the first liquid discharge stage is completed and the second liquid discharge stage begins;

[0104] In the second liquid discharge stage, the liquid flow rate at the first port 11A is continuously detected, and it is continuously determined whether the liquid flow rate at the second port 11B is less than or equal to a second preset flow rate value; if so, it is determined that the second liquid discharge stage is completed.

[0105] It is easy to understand that since the first drainage stage is used to discharge most of the heat exchange liquid, and the second drainage stage is used to discharge the remaining liquid that cannot be discharged in the first drainage stage, the second preset flow value is smaller than the first preset flow value, and the second preset flow value can be close to 0.

[0106] In some embodiments, after the second drainage stage is completed, the drainage method further comprises a drying stage, the drying stage comprising:

[0107] Control the second port 11B to communicate with an external gas source so as to dry the temperature control channel 11 by delivering gas inside the temperature control channel;

[0108] The humidity at the first port 11A and the second port 11B is continuously detected, and the humidity difference at the first port 11A and the second port 11B is calculated, and it is continuously determined whether the humidity difference is less than or equal to the preset humidity difference value; if so, the second port 11B is controlled to be disconnected from the external gas source. Specifically, since the gas flows into the temperature control channel 11 from the second port 11B, the humidity at the second port 11B will be lower than the humidity at the first port 11A, and as the drying proceeds, the humidity inside the temperature control channel 11 will continue to decrease, and then the humidity difference at the first port 11A and the second port 11B will gradually decrease. Therefore, the humidity difference at the first port 11A and the second port 11B can represent the drying condition of the temperature control channel 11.

[0109] It should be noted that the above control step and calculation step can be executed by the control component 4, and the connection object of the first port 11A and the second port 11B can be switched by sending corresponding control signals to the first three-way valve 13 and the second three-way valve 14. The above detection step can be executed by the detection component.

[0110] Specifically, based on Fig. 9 The semiconductor process chamber shown in the figure, this embodiment also provides a specific execution process of the above-mentioned liquid discharge method, which includes:

[0111] S1, temperature control stage:

[0112] S11, sending a temperature control instruction to the control component 4; specifically, the drainage instruction can be issued by an operator controlling the master control machine;

[0113] S12, the control component 4 controls the bidirectional pump 72 to rotate forwardly, so as to drive the heat exchange liquid in the liquid storage tank 71 to be input from the first port 11A of the temperature control channel 11 and return to the liquid storage tank 71 from the second port 11B, thereby controlling the temperature of the chamber body by using the circulating heat exchange liquid flow;

[0114] S2, the first drainage stage:

[0115] S21, sending a drain instruction to the control component 4; specifically, the drain instruction may be issued by an operator controlling the master control machine;

[0116] S22, the control component 4 controls the forward-rotating bidirectional pump 72 to turn off to stop driving the heat exchange fluid to flow; and controls the electric cylinder to push the switch rod 21 to remain in the first state to ensure that the heat exchange fluid flows normally in the temperature control pipe 11;

[0117] S23, the control component 4 controls the second three-way valve 14 to connect the second port 11B with the liquid storage tank 71, and controls the first three-way valve 13 to connect the first port 11A with the external gas source 8, so as to use the gas to push the liquid in the temperature control channel 11 to flow to the liquid storage tank 71;

[0118] S24, the flow detector 5 detects the liquid outflow at the second port 11B, and the control component 4 continuously determines whether the liquid outflow at the second port 11B is less than or equal to the first preset flow value; if not, continue to determine: if yes, it is determined that the first liquid discharge stage is completed;

[0119] S3, the second drainage stage

[0120] S31, the control component 4 controls the electric cylinder to push the switch rod 21 upward until it switches to the second state, so that the accumulated liquid in the plurality of first pipe sections 111 flows downward into the second pipe section 112 through the auxiliary drainage pipe 12;

[0121] S32, the control component 4 controls the first three-way valve 13 to connect the first port 11A with the liquid storage tank 71, and controls the second three-way valve 14 to connect the second port 11B with the external gas source 8, so as to use the gas to push the liquid in the second pipe section 112 to flow back into the liquid storage tank 71;

[0122] S33, the control component 4 controls the bidirectional pump 72 to rotate in the opposite direction to speed up the flow of the liquid discharged from the first port 11A into the liquid storage tank 71;

[0123] S34, the flow detector 5 detects the liquid outflow at the first port 11A, and the control component 4 continuously determines whether the liquid outflow at the first port 11A is less than or equal to the second preset flow value; if not, continue to determine: if yes, determine that the second liquid discharge stage is completed;

[0124] S4, Drying stage:

[0125] S41, the control component 4 controls the heating belt to turn on to heat the gas output from the external gas source 8;

[0126] S42, the control component 4 controls the second three-way valve 14 to connect the second port 11B with the external gas source 8, so as to dry the temperature control channel 11 with the gas;

[0127] S43, the two humidity detectors detect the humidity at the first port 11A and the humidity at the second port 11B respectively, the control component 4 calculates the humidity difference between the humidity at the first port 11A and the humidity at the second port 11B of the temperature control channel 11, and continuously determines whether the humidity difference is less than or equal to the preset humidity difference value; if not, continue to determine: if yes, determine that the dryness inside the temperature control channel 11 meets the requirement;

[0128] S44, the control component 4 controls the heating belt and the two-way pump 72 to close, and controls the first three-way valve 13 and the second three-way valve 14 to connect the first port 11A and the second port 11B to the liquid storage tank 71 respectively, and controls the electric cylinder to reset so that the switch rod 21 returns to the first state.

[0129] As described above, the semiconductor process chamber and drainage method provided in this embodiment can utilize the auxiliary drainage channel to discharge the accumulated liquid inside the temperature control channel into the second pipe section, and can discharge the accumulated liquid by reverse drainage, thereby preventing the accumulated liquid from solidifying in a low temperature environment and causing damage to the temperature control channel.

[0130] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process chamber; characterized in that, include: Chamber body; A temperature control assembly, comprising a first temperature control body disposed on the outer wall of the chamber body; the first temperature control body has a temperature control channel for the flow of heat exchange fluid, and the temperature control channel has a plurality of first pipe segments and a second pipe segment, both ends of the first pipe segment are respectively connected to pipe segments higher than the end thereof, and the second pipe segment is located at the bottom end of the temperature control channel and extends horizontally; the first temperature control body also has an auxiliary drainage channel, and the auxiliary drainage channel is connected to the plurality of first pipe segments and the second pipe segments; A switch assembly is arranged in the auxiliary drainage channel; the switch assembly has a first state and a second state; in the first state, the switch assembly is used to block the liquid from flowing in the auxiliary drainage channel; in the second state, the switch assembly is used to allow the liquid in the plurality of first pipe segments to flow into the second pipe segment through the auxiliary drainage channel.

2. The semiconductor process chamber according to claim 1, characterized in that: The auxiliary drainage channel is located on the side of the plurality of first pipe segments and the second pipe segment; the auxiliary drainage channel includes a plurality of connecting segments and a plurality of closed segments arranged alternately; the plurality of connecting segments are connected to the plurality of first pipe segments and the second pipe segments in a one-to-one correspondence; the plurality of closed segments are located between two adjacent first pipe segments and between the second pipe segment and the first pipe segment adjacent thereto; When the switch assembly is in the first state, the switch assembly is blocked in each of the closed sections; when the switch assembly is in the second state, the switch assembly connects all of the communicating sections with the corresponding closed sections to connect the auxiliary drainage channels.

3. The semiconductor process chamber according to claim 2, characterized in that: The switch assembly includes a switch rod; the switch rod is arranged inside the auxiliary liquid discharge channel and extends along the auxiliary liquid discharge channel; The switch rod has at least one convex portion and at least one concave portion, and the convex portions and the concave portions are alternately arranged along the length direction of the switch rod; the convex portions are arranged in one-to-one correspondence with the connecting sections, and the length of the convex portions is less than the length of the corresponding connecting sections; The outer peripheral surface of the convex portion can be sealed with the inner wall of the closed section; the outer peripheral surface of the concave portion is spaced apart from the inner wall of the closed section; When the switch assembly is in the first state, each of the protrusions is sealed and matched with the inner wall of the corresponding closed section to prevent the liquid in the corresponding first pipe section from flowing into the connecting section; When the switch assembly is in the second state, the convex portion is located in the corresponding connecting section, and the concave portion is located in the closed section, so that the liquid in the first pipe section flows into the connecting section.

4. The semiconductor process chamber according to claim 1, wherein: The first pipe segment extends along a first direction; the temperature control channel further comprises a plurality of third pipe segments extending along a second direction and a plurality of fourth pipe segments extending along the first direction; A plurality of the third pipe segments and a plurality of the fourth pipe segments can be connected with a plurality of the first pipe segments and the second pipe segments to form one temperature control channel; A plurality of the first pipe sections are distributed at intervals along the second direction, and each of the first pipe sections is connected to two third pipe sections higher than both ends thereof; The plurality of fourth pipe segments are spaced apart along the second direction, and the fourth pipe segment is connected with two third pipe segments lower than both ends thereof, or is respectively connected with a third pipe segment higher than one end thereof and a fourth pipe segment lower than one end thereof.

5. The semiconductor process chamber according to claim 4, characterized in that: The first direction is a horizontal direction; the second direction is a vertical direction; The auxiliary liquid discharge pipe extends in a vertical direction.

6. The semiconductor process chamber according to claim 3, characterized in that: A mounting through hole communicating with the auxiliary drainage channel is also provided on the bottom surface of the first temperature control body. The mounting through hole is coaxially arranged with the auxiliary drainage channel, and the hole wall of the mounting through hole is sealed with the outer periphery of the switch rod; the switch rod extends to the outside of the first temperature control body through the mounting through hole; The semiconductor process chamber further comprises a driving assembly; the driving assembly is connected to the end of the switch rod and is used for driving the switch rod to slide inside the auxiliary drainage channel.

7. The semiconductor process chamber according to claim 6, characterized in that: The temperature control channel has a first port and a second port, both of which are connected to an external liquid source; the first port is arranged at the end of the second pipe section; The semiconductor process chamber also includes a control component; wherein the control component is used to control the first port to allow the heat exchange liquid to enter during the temperature control stage and to stop allowing the heat exchange liquid to enter during the first and second drainage stages, and to control the second port to discharge the heat exchange liquid during the temperature control stage and the first drainage stage; the control component is also used to control the drive component to drive the switch rod to slide to the first state during the first drainage stage, and to control the drive component to drive the switch rod to slide to the second state during the second drainage stage.

8. The semiconductor process chamber according to claim 7, characterized in that: The first port is connected to the external liquid source and the external gas source respectively through a first three-way valve, and the second port is connected to the external liquid source and the external gas source respectively through a second three-way valve; The control component is also used to control the first three-way valve to connect the first port with the external gas source in the first liquid discharge stage, and control the second three-way valve to connect the second port with the external liquid source, so as to use gas to push the liquid inside the temperature control channel to be discharged; and is also used to control the second three-way valve to connect the second port with the external gas source in the second liquid discharge stage, so as to use gas to push the liquid inside the second pipe section to be discharged.

9. The semiconductor process chamber according to claim 8, characterized in that: It also includes a detection component; the detection component includes two flow detectors connected to the first port and the second port respectively; the two flow detectors are used to detect the liquid flow at the first port and the second port respectively, and send the detection results to the control component; The control component is also used to continuously determine whether the liquid flow rate of the second port is less than or equal to a first preset flow rate value during the first liquid discharge stage; if so, it is determined that the first liquid discharge stage is completed; The control component is also used to continuously determine whether the liquid flow rate of the first port is less than or equal to a second preset flow rate value during the second liquid discharge stage; if so, it is determined that the second liquid discharge stage is completed.

10. The semiconductor process chamber according to claim 9, characterized in that: The detection component further includes two humidity detectors respectively arranged at the first port and the second port of the temperature control channel; the two humidity detectors are respectively used to detect the humidity at the first port and the second port, and send the detection results to the control component; The control component is also used to control the second three-way valve to connect the second port with the external gas source after the second liquid discharge stage is completed, so as to dry the temperature control channel by delivering gas inside the temperature control channel; and calculate the humidity difference between the first port and the second port, and continuously determine whether the humidity difference is less than or equal to a preset humidity difference value; If so, the second three-way valve is controlled to disconnect the second port from the external gas source.

11. The semiconductor process chamber according to claim 10, characterized in that: It also includes a heating component, which is connected to the external gas source and is used to heat the gas output by the external gas source; The control component is also used to control the heating component to turn on when the temperature control channel is connected to the external air source; and to control the heating component to turn on and off after the temperature control channel is disconnected from the external air source.

12. The semiconductor process chamber according to claim 7, wherein: The number of the first temperature control bodies is two; the two first temperature control bodies are respectively located on two opposite sides of the chamber body; The temperature control assembly further includes a second temperature control body, which is disposed on the outer wall of the chamber body and is adjacent to the two first temperature control bodies; the second temperature control body has an auxiliary temperature control channel; The auxiliary temperature control channel includes a fifth pipe segment, a sixth pipe segment and a seventh pipe segment; one end of the fifth pipe segment and the sixth pipe segment are respectively connected to the second ports of the two temperature control channels, and the other ends are connected to one end of the seventh pipe segment; the other end of the seventh pipe segment is connected to the external liquid source.

13. A liquid discharge method, applied to the semiconductor process chamber according to any one of claims 1 to 12; characterized in that: include: In the first liquid discharge stage, controlling the switch component of the semiconductor process chamber to be in a first state; Controlling the heat exchange fluid to be discharged in a preset circulation direction in the temperature control channel; In the second drainage stage, the switch assembly is controlled to be in the second state; and the remaining heat exchange fluid is controlled to be drained in the temperature control channel in a direction opposite to the preset circulation direction.

14. The liquid discharge method according to claim 13, characterized in that: Applicable to a semiconductor process chamber as claimed in any one of claims 8 to 12; The controlling of the normal discharge of the heat exchange liquid in the temperature control channel in a circulation direction includes: controlling the first port of the temperature control channel to be connected only to an external gas source, and controlling the second port of the temperature control channel to be connected only to an external liquid source, so as to use gas to push the liquid in the temperature control channel to be discharged through the second port; Controlling the heat exchange liquid to discharge in the temperature control channel in a direction opposite to the circulation direction includes: controlling the first port to be connected only to the external liquid source, and controlling the second port to be connected only to the external gas source, so as to use gas to push the liquid inside the second pipe section to discharge.

15. The liquid discharge method according to claim 13, characterized in that: After the second drainage stage is completed, a drying stage is also included, and the drying stage includes: Controlling the second port to communicate with the external gas source so as to dry the temperature control channel by delivering gas inside the temperature control channel; Continuously detect the humidity at the first port and the second port, calculate the humidity difference at the first port and the second port, and continuously determine whether the humidity difference is less than or equal to a preset humidity difference value; if so, control the second port to be disconnected from the external air source.

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