Etching equipment
By setting a baffle in the etching device, the etching liquid bypasses the baffle and reaches the top of the part to be etched, the problem of uneven distribution of perforation diameters after etching is solved, and a more uniform etching effect is achieved.
Patent Information
- Application Number
- CN202510160579.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-13
- Publication Date
- 2025-05-06
AI Technical Summary
After etching, the perforation diameter of the existing etching equipment is unevenly distributed, and the etching effect is poor.
An etching device is designed, by setting a baffle between the liquid outlet and the area of the support layer, so that the etching liquid bypasses the baffle to reach above the etching member to be etched, thereby reducing the pressure of the etching liquid, reducing the flow rate difference, and improving the uniformity of the perforation diameter distribution.
By reducing the flow rate difference of the etching liquid and reducing the difference in the etching amount of the hole damage layer, the uniformity of the perforation diameter distribution of the etched parts to be etched is significantly improved, and the etching effect is improved.
Smart Images
Figure CN119943723A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular, to etching equipment. Background Art
[0002] After a semiconductor material, such as an electrode, is punched, a hole damage layer is generated at the perforation. Generally, wet etching can be used to remove the hole damage layer with the help of an etching solution.
[0003] In the etching process, the workpiece to be etched with a perforation is placed at the separation position of the upper tank body and the lower tank body of the etching equipment to seal and separate the upper tank body from the lower tank body. The etching liquid is transported to the upper tank body through the liquid outlet of the liquid outlet pipe, and flows from the upper tank body to the lower tank body through the perforation of the workpiece to be etched, thereby the hole damage layer of the perforation is etched by the etching liquid and removed.
[0004] However, after etching in this manner, the diameters of the holes in the workpiece to be etched are usually unevenly distributed, resulting in poor etching effects. Summary of the invention
[0005] This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.
[0006] The purpose of the present disclosure is to provide an etching device capable of improving the distribution uniformity of the diameter of the holes of the etched workpiece.
[0007] In order to achieve the above object, an etching device is provided, which is used to perform hole etching in a workpiece to be etched using an etching liquid, and the etching device comprises: Tank body; A support layer is arranged in the tank body to separate the tank body into an upper tank body and a lower tank body, the support layer has a hole connecting the upper tank body and the lower tank body, and is used to support the workpiece to be etched above the hole; a liquid outlet pipe, comprising a liquid outlet, the liquid outlet being located in the upper tank body and radially outside a region of the support layer for supporting the workpiece to be etched, so as to provide etching liquid to the upper tank body; and The baffle is arranged between the liquid outlet and the area, and is arranged to allow the etching liquid to bypass the baffle and reach above the supported workpiece to be etched.
[0008] In some embodiments, the liquid outlet may be facing away from the baffle and toward the side wall of the upper tank body.
[0009] In some embodiments, the baffle may enclose the entire region from the radially outer side of the region.
[0010] In some embodiments, the bottom surface of the baffle can be spaced apart from the upper surface of the support layer.
[0011] In some embodiments, the bottom surface of the baffle may be spaced apart from the upper surface of the support layer by a distance less than or equal to 11 mm.
[0012] In some embodiments, the height of the top surface of the baffle may be greater than the height of the liquid outlet pipe.
[0013] In some embodiments, the liquid outlet conduit may include a plurality of liquid outlets, which are disposed at a circumferential wall of the liquid outlet conduit and distributed along the axial direction of the liquid outlet conduit.
[0014] In some embodiments, the baffle may extend to cover the plurality of liquid outlets.
[0015] In some embodiments, the top of the baffle may have a sawtooth structure, wherein the sawtooth structure includes a plurality of teeth disposed on the top surface of the baffle and distributed in a direction parallel to the axial direction.
[0016] In some embodiments, the distribution density of the plurality of teeth may gradually decrease along the flow direction of the etching liquid in the liquid outlet pipe.
[0017] According to the above technical solution, by arranging the baffle between the liquid outlet and the area of the support layer for supporting the workpiece to be etched, and allowing the baffle to allow the etching liquid to bypass the baffle and reach the top of the supported workpiece to be etched, the etching liquid sprayed from the liquid outlet can be blocked before reaching the workpiece to be etched, so as to reduce the pressure of the etching liquid sprayed from the liquid outlet. In this way, the difference in the flow rate of the etching liquid immersing the workpiece to be etched can be reduced, thereby reducing the difference in the etching amount of the hole damage layer of each perforation by the etching liquid, and thus improving the distribution uniformity of the diameter size of each perforation of the etched workpiece to be etched. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The features and advantages of the embodiments of the present disclosure will become more easily understood through the following description with reference to the accompanying drawings. The drawings are not drawn to scale and some features may be enlarged or reduced to show details of specific parts. In the drawings: Figure 1 The structure of an etching apparatus according to the related art is schematically shown in a front view.
[0019] Figure 2 for Figure 1 A top view of the etching apparatus shown in FIG.
[0020] Figure 3 The diagram shows the distribution of diameters of holes in a workpiece after the workpiece is etched using an etching device of the related art.
[0021] Figure 4The structure of an etching device according to an embodiment of the present disclosure is schematically shown in a front view.
[0022] Figure 5 for Figure 4 A top view of the etching apparatus shown in FIG.
[0023] Figure 6 The diameter distribution of the through holes of the workpiece to be etched after the workpiece to be etched is etched using the etching device according to the embodiment of the present disclosure.
[0024] Figure 7 is a schematic front view of an etching device according to another embodiment of the present disclosure.
[0025] Figure 8 is a schematic top view of an etching device according to yet another embodiment of the present disclosure.
[0026] Fig. 9 It is a schematic front view of an etching device according to still another embodiment of the present disclosure.
[0027] Fig.10 is a schematic side view of a baffle according to an embodiment of the present disclosure.
[0028] Fig.11 is a schematic side view of a baffle according to another embodiment of the present disclosure.
[0029] In the drawings, the same or corresponding technical features, parts or components are represented by the same or corresponding reference numerals. DETAILED DESCRIPTION
[0030] The present disclosure is described in detail below with reference to the accompanying drawings by means of exemplary embodiments. It should be noted that the following detailed description of the present disclosure is only for illustrative purposes and is by no means a limitation of the present disclosure.
[0031] It should be noted that, for the sake of clarity, not all features of a specific implementation are described and illustrated in the specification and drawings. Furthermore, in order to avoid unnecessary details that obscure the technical solution focused on by the present disclosure, only the device structures and parts closely related to the technical solution of the present disclosure are described and illustrated in the specification and drawings, while other details that are not closely related to the technical content of the present disclosure and are known to those skilled in the art are omitted.
[0032] First, refer to Figures 1 to 3 , an etching device 1 ′ for hole etching according to the related art is described in detail.
[0033] like Figure 1 As shown in FIG. 1 , the etching device 1 ′ comprises a tank body 10 ′, a supporting layer 20 ′ and two liquid outlet pipes 30 ′.
[0034] The support layer 20' is disposed in the tank body 10' to separate the tank body 10' into an upper tank body 110' and a lower tank body 120'. The support layer 20' has a hole 210' connecting the upper tank body 110' and the lower tank body 120' and is used to support the workpiece 2' to be etched above the hole 210'.
[0035] The object to be etched 2' may be a semiconductor material such as an electrode. When the object to be etched 2' is supported above the hole 210', the upper tank body 110' and the lower tank body 120' can be sealed and separated by the object to be etched 2' closing the hole 210'.
[0036] The two liquid outlet pipes 30' are both arranged in the upper tank body 110' and are located radially outside the region 201'a of the support layer 20' for supporting the workpiece 2' to be etched and are opposite in the radial direction of the workpiece 2' to be etched. The liquid outlet pipe 30' includes a liquid outlet 310' to provide etching liquid 3' to the upper tank body 110' toward the workpiece 2' to be etched supported on the support layer 20'.
[0037] For example, Figure 1 and Figure 2 As shown in FIG. 1 , two liquid outlet pipes 30 ′ are respectively arranged on two supporting platforms 20 ′ a of the supporting layer 20 ′, so as to provide etching liquid 3 ′ to the workpiece 2 ′ to be etched from a relatively higher position.
[0038] Since the upper tank body 110' and the lower tank body 120' are sealed and separated, the etching liquid 3' provided by the liquid outlet 310' of the liquid outlet pipe 30' will accumulate in the upper tank body 110' so that the workpiece 2' to be etched is immersed therein. At this time, the etching liquid 3' located on the surface of the workpiece 2' to be etched will flow from the upper tank body 110' to the lower tank body 120' through the through hole 2'a of the workpiece 2' to be etched (such as Figure 1 2'a).
[0039] The etching liquid 3' can be an acidic liquid such as hydrofluoric acid, so that when it flows through the through hole 2'a, it contacts the hole damage layer of the through hole 2'a and removes the hole damage layer by etching. The diameter of the through hole 2'a will also increase due to the removal of the hole damage layer.
[0040] The inventors found that the etching liquid 3' has a certain pressure when spraying out from the liquid outlet 310' of the liquid outlet pipe 30', which will affect the flow direction of the etching liquid 3' on the surface of the immersed etched object 2', thereby affecting the etching of the hole damage layer.
[0041] Specifically, if Figure 1 and Figure 2As shown in the figure, the etching liquid 3' will fall on the etching liquid surface corresponding to the edge of the circular etched object 2' when it is sprayed out from the liquid outlet 310'. Therefore, for the through hole 2'a of the etched object 2' close to the liquid outlet 310', the flow rate of the etching liquid 3' flowing through will be relatively small; while for the through hole 2'a of the etched object 2' far from the liquid outlet 310', the flow rate of the etching liquid 3' flowing through will be relatively large.
[0042] The inventors have found that different flow rates of the etching solution 3' will lead to different etching amounts, and thus different diameters of the perforations 2'a after etching. The smaller the flow rate, the smaller the etching amount, and thus the diameter of the perforations 2'a is relatively small; conversely, the greater the flow rate, the greater the etching amount, and thus the diameter of the perforations 2'a is relatively large.
[0043] In this regard, the inventors analyzed the diameters of the through holes 2'a of the workpiece 2' to be etched after etching. Figure 3 As shown in the figure, the right strip indicates the diameter of the perforation 2'a with grayscale depth, and the darker the grayscale, the larger the diameter of the perforation 2'a. The left dot matrix diagram indicates each perforation 2'a distributed on the circular piece 2' to be etched with grayscale dots.
[0044] It can be clearly observed that for the perforation 2'a close to the liquid outlet 310', that is, for Figure 3 For the through holes 2'a located at the left and right edges of the workpiece 2' to be etched, the grayscale of the dots is lighter, which means that the diameter of the through hole 2'a is smaller and the etching amount is smaller; while for the through hole 2'a far away from the liquid outlet 310', that is, Figure 3 For the through hole 2'a located in the middle of the workpiece 2' to be etched, the grayscale of the point is darker, which means that the diameter of the through hole 2'a is larger and the etching amount is larger. As a result, the etching eddy current phenomenon occurs, which is manifested as uneven distribution of the diameter of the through hole 2'a and poor etching effect.
[0045] Based on the above findings and analysis of the inventors, according to the embodiments of the present disclosure, an etching device for etching holes in a workpiece using an etching liquid is provided. Figures 4 to 11 , the etching device 1 is described in detail.
[0046] First, refer to Figure 4 and Figure 5 The etching device 1 includes a tank body 10 , a supporting layer 20 and a liquid outlet pipe 30 .
[0047] The tank 10 is Figure 4 and Figure 5 It is shown as a hollow cuboid, however, it may be in any other suitable shape.
[0048] The support layer 20 is disposed in the tank body 10 to separate the tank body 10 into an upper tank body 110 and a lower tank body 120. The support layer 20 has a hole 210 that connects the upper tank body 110 and the lower tank body 120 to each other, and is used to support the workpiece 2 to be etched above the hole 210. Figure 4 and Figure 5 In the figure, the hole 210 is exemplarily shown to be located at the center of the support layer 20 , however, the hole 210 may also be located at any other suitable position of the support layer 20 .
[0049] Similar to the above discussion, the upper tank body 110 and the lower tank body 120 are sealed and separated by the closing of the hole 210 by the workpiece 2 to be etched. Here, the sealing refers to the sealing of the supporting contact portion (i.e., the area 201a described below) between the workpiece 2 to be etched and the supporting layer 20. At this time, the upper tank body 110 and the lower tank body 120 can still communicate with each other through the through hole 2a of the workpiece 2 to be etched.
[0050] The liquid outlet pipe 30 includes a liquid outlet 310, which is located in the upper tank body 110 and radially outside the region 201a of the support layer 20 for supporting the workpiece 2 to be etched (that is, radially outside the workpiece 2 to be etched supported on the support layer 20), so as to supply the etching liquid 3 to the upper tank body 110. Figure 1 Similar, in Figure 4 In the embodiment, two liquid outlet pipes 30 are respectively arranged on two supporting platforms 20a of the supporting layer 20 to provide etching liquid 3 to the workpiece 2 to be etched from a relatively higher position.
[0051] The etching liquid 3 can be pumped from a sump tank into the liquid outlet pipe 30, for example, and sprayed out from the liquid outlet 310 of the liquid outlet pipe 30. The etching liquid 3 provided by the liquid outlet 310 will accumulate in the upper tank body 110 so that the workpiece 2 to be etched is immersed therein. Since the upper tank body 110 and the lower tank body 120 are connected to each other via the through hole 2a of the workpiece 2 to be etched, the etching liquid 3 on the surface of the workpiece 2 to be etched will flow from the upper tank body 110 to the lower tank body 120 via the through hole 2a of the workpiece 2 to be etched, so as to etch the hole damage layer of the through hole 2a.
[0052] According to an embodiment of the present disclosure, the etching device 1 further comprises a baffle 40. The baffle 40 is disposed between the liquid outlet 310 and the region 201a, and is configured to allow the etching liquid 3 to bypass the baffle 40 and reach above the supported workpiece 2 to be etched.
[0053] Here, between the liquid outlet 310 and the region 201a refers to the position between the liquid outlet 310 and the region 201a, and has nothing to do with the orientation of the liquid outlet 310. By arranging the baffle 40 between the liquid outlet 310 and the region 201a, it means that the baffle 40 is arranged between the liquid outlet 310 and the supported workpiece 2 to be etched. The baffle 40 can block the etching liquid 3 sprayed from the liquid outlet 310 before it reaches the workpiece 2 to be etched. For example, Figure 4 and Figure 5 As shown in , when the liquid outlet 310 sprays toward the side of the workpiece to be etched, the baffle 40 can directly block the ejected etching liquid 3. Thus, the pressure of the etching liquid 3 ejected from the liquid outlet 310 can be reduced. Moreover, the baffle 40 does not completely block the flow of the etching liquid 3 toward the workpiece to be etched 2, but allows the etching liquid 3 to bypass the baffle 40 to reach the top of the workpiece to be etched 2, for example, bypass the baffle 40 from the bottom, top or side of the baffle 40 to reach the top of the workpiece to be etched 2.
[0054] In this way, the difference in the flow rate of the etching liquid 3 that immerses the workpiece 2 to be etched can be reduced, and because the liquid pressure above the workpiece 2 to be etched is constant, the difference in the etching amount of the hole damage layer of each through-hole 2a by the etching liquid 3 can be reduced, so that the diameter size distribution of each through-hole 2a of the etched workpiece 2 is uniform.
[0055] Reference Figure 6 , shows the distribution of diameters of the through holes 2a of the workpiece 2 to be etched after the workpiece 2 to be etched is etched by the etching device 1. Figure 3 Similarly, the strip on the right indicates the diameter of the through-hole 2a with the depth of gray, and the dot matrix on the left represents each through-hole 2a distributed on the circular workpiece 2 to be etched with gray dots.
[0056] It can be clearly observed that for all the through holes 2a on the workpiece 2 to be etched, including the through hole 2a close to the liquid outlet 310 (ie, Figure 6 The through holes 2a located at the left and right edges of the workpiece 2 to be etched and the through holes 2a far from the liquid outlet 310 (ie, Figure 6 The grayscale of the points of the through holes 2a located in the middle of the workpiece 2 to be etched is basically the same, which means that the diameters of the through holes 2a are basically the same and the etching amounts are basically the same. As a result, the uniformity of the diameter distribution of the through holes 2a is improved, and thus the etching effect is improved, and the etching eddy current phenomenon is reduced or even eliminated.
[0057] In some embodiments, reference Figure 7 The liquid outlet 310 may face away from the baffle 40 and toward the side wall 1101 of the upper tank body 110 .
[0058] In this way, the etching liquid 3 sprayed from the liquid outlet 310 will not directly fall onto the etching liquid surface above the workpiece 2 to be etched, but will first contact the side wall 1101 of the upper tank body 110, and then flow toward the side of the workpiece to be etched. At this time, the impact force of the etching liquid 3 has been reduced. When the etching liquid 3 flowing toward the side of the workpiece to be etched contacts the baffle 40 again, the baffle 40 will further reduce the impact force of the etching liquid 3 through its blocking effect on the etching liquid 3, so that the etching liquid 3 reaches the top of the workpiece 2 to be etched by normal flow and immerses the surface of the workpiece 2 to be etched.
[0059] In this way, the difference in the flow rate of the etching liquid 3 that immerses the workpiece 2 to be etched can be further reduced, thereby further reducing the difference in the etching amount of the hole damage layer of each through-hole 2a by the etching liquid 3, so that the diameter size distribution of each through-hole 2a of the etched workpiece 2 is more uniform.
[0060] In some embodiments, the baffle 40 may enclose the entire region 201 a from the radially outer side of the region 201 a .
[0061] This means that if Figure 8 As shown in FIG. 4 , the baffle 40 can enclose the entire workpiece 2 from the radial outer side of the supported workpiece 2. That is, the baffle 40 can block the etching liquid 3 flowing from all directions outside the workpiece 2 to the workpiece 2.
[0062] In this way, the impact force of the etching liquid 3 flowing from various directions on the outside of the workpiece 2 to be etched can be reduced, so that the difference in the flow rate of the etching liquid 3 flowing from various directions on the outside of the workpiece 2 to the top of the workpiece 2 to be etched is reduced, thereby further reducing the difference in the etching amount of the hole damage layer of each through-hole 2a by the etching liquid 3, and thereby further improving the distribution uniformity of the diameter size of each through-hole 2a of the etched workpiece 2.
[0063] In some embodiments, Figure 4 As shown in FIG. 4 , the bottom surface 401 of the baffle 40 may be spaced apart from the upper surface 201 of the support layer 20 to allow the etching liquid 3 to bypass the gap G between the bottom surface 401 and the upper surface 201 and flow toward the workpiece 2 to be etched.
[0064] In this case, first, when the etching liquid 3 encounters the baffle plate 40, it will be blocked by the baffle plate 40, so that the impact force of the etching liquid 3 is reduced, thereby reducing the flow rate; secondly, when the etching liquid 3 passes through the gap G, it will be affected by the wall adhesion of the baffle plate 40, so that the flow rate of the etching liquid 3 is further reduced.
[0065] In this way, the difference in the flow rate of the etching liquid 3 that immerses the workpiece 2 to be etched can be further reduced, thereby further reducing the difference in the etching amount of the hole damage layer of each through-hole 2a by the etching liquid 3, and thus further improving the distribution uniformity of the diameter size of each through-hole 2a of the etched workpiece 2 to be etched.
[0066] It is conceivable that the spacing distance between the bottom surface 401 of the baffle 40 and the upper surface 201 of the support layer 20 (ie, the length of the gap G in the vertical direction) may be less than or equal to 11 mm.
[0067] When the spacing distance is less than or equal to 11 mm, the height of the bottom surface 401 of the baffle 40 can be made lower than the height of the upper surface 2b of the etched object 2 (e.g., electrode) to be etched. In this case, the etching liquid 3 flowing through the gap G will first flow to the side of the etched object 2, and then slowly immerse the upper surface 2b of the etched object 2.
[0068] In this way, it is possible to prevent the etching liquid 3 flowing from the gap G to the workpiece 2 to be etched from flowing directly to the upper surface 2b of the workpiece 2 to be etched with a certain impact force, thereby causing the flow rate difference of the etching liquid 3 that immerses the workpiece 2 to be etched to be too large, and ultimately affecting the distribution uniformity of the diameters of the perforations 2a of the etched workpiece 2 to be etched.
[0069] In some embodiments, Figure 4 As shown in FIG. 4 , the height of the top surface 402 of the baffle 40 may be greater than the height of the liquid outlet pipe 30 .
[0070] In this way, when the position of the liquid outlet 310 is too high, or when the etching liquid 3 sprayed from the liquid outlet 310 splashes due to hitting the baffle 40 or the side wall 1101 of the upper trough body 110, the baffle 40 can better block the etching liquid 3 to prevent it from crossing the top surface 402 of the baffle 40 and falling onto the etching liquid surface above the workpiece 2 to be etched, thereby affecting the flow rate of the etching liquid 3 that immerses the workpiece 2 to be etched, and thus affecting the distribution uniformity of the diameter size of each through hole 2a of the workpiece 2 to be etched after etching.
[0071] In some embodiments, Figure 4 and Figure 5 As shown in , the liquid outlet conduit 30 may include a plurality of liquid outlets 310 , which are disposed at a circumferential wall of the liquid outlet conduit 30 and distributed along an axial direction L of the liquid outlet conduit 30 .
[0072] By distributing the plurality of liquid outlets 310 along the axial direction L of the liquid outlet pipe 30, the etching liquid 3 can be provided to the workpiece 2 to be etched in a more dispersed manner. In this way, the uniformity of providing the etching liquid 3 to the workpiece 2 to be etched can be improved, so that the etching liquid 3 provided from the liquid outlet 310 can have a more uniform effect on the flow rate of the etching liquid 3 that immerses the workpiece 2 to be etched, and thus the distribution uniformity of the diameter size of each through hole 2a of the workpiece 2 to be etched can be improved.
[0073] It is conceivable that the liquid outlet pipe 30 may be provided with a plurality of liquid outlets 310 distributed along the axial direction L of the liquid outlet pipe 30 , for example, two liquid outlets 310 . Moreover, the liquid outlets 310 may be evenly distributed along the axial direction L.
[0074] It is also conceivable that the baffle 40 may extend to cover the plurality of liquid outlets 310 .
[0075] That is, the baffle 40 can extend to cover all the liquid outlets 310 of the liquid outlet pipe 30. In this way, even the etching liquid 3 sprayed from the liquid outlets 310 at both ends of the liquid outlet pipe 30 which are relatively far from the workpiece 2 to be etched can be effectively blocked.
[0076] In some embodiments, reference Figures 9 to 11 The top of the baffle 40 may have a sawtooth structure 410 , and the sawtooth structure 410 includes a plurality of teeth 4101 , which are disposed on the top surface 402 of the baffle 40 and distributed along a direction parallel to the axial direction L.
[0077] As the surface of the etching liquid 3 in the upper tank 110 continues to rise, the etching liquid 3 will overflow the top surface 402 of the baffle 40 and reach above the workpiece 2 to be etched, thereby affecting the flow rate of the etching liquid 3 above the workpiece 2 to be etched.
[0078] By arranging a plurality of teeth 4101 on the top surface 402 of the baffle 40, the flow rate of the etching liquid 3 flowing toward the top of the workpiece 2 to be etched can be reduced, thereby further reducing the difference in the flow rate of the etching liquid 3 that immerses the workpiece 2 to be etched, thereby further improving the distribution uniformity of the diameter size of each perforation 2a of the etched workpiece 2 to be etched.
[0079] In some embodiments, Fig.11 As shown in FIG. 1 , the distribution density of the plurality of teeth 4101 can be along the flow direction S of the etching liquid 3 in the liquid outlet pipe 30 (see FIG. Figure 5 , Fig.10 and Fig.11 ) gradually decreases.
[0080] For the etching liquid 3 in the liquid outlet pipe 30, the closer the distance to the liquid supply source, such as the liquid supply pump, the greater the pressure. In other words, the pressure of the etching liquid 3 in the liquid outlet pipe 30 gradually decreases along the flow direction S of the etching liquid 3. Accordingly, along the flow direction S of the etching liquid 3 in the liquid outlet pipe 30, the impact force of the etching liquid 3 sprayed from each liquid outlet 310 will also gradually decrease.
[0081] This will cause the flow rate of the etching liquid 3 sprayed out of the liquid outlet 310 closer to the liquid supply pump to be relatively large, while the flow rate of the etching liquid 3 sprayed out of the liquid outlet 310 farther from the liquid supply pump to be relatively small, resulting in a larger difference in the flow rate of the etching liquid 3 that immerses the workpiece 2 to be etched, thereby increasing the difference in the amount of etching of the hole damage layer of each through-hole 2a by the etching liquid 3, and thereby reducing the distribution uniformity of the diameter size of each through-hole 2a of the etched workpiece 2 to be etched.
[0082] By gradually reducing the distribution density of the plurality of teeth 4101 along the flow direction S of the etching liquid 3 in the liquid outlet pipe 30, that is, making the teeth 4101 more densely distributed at a position closer to the liquid supply pump and more sparsely distributed at a position farther from the liquid supply pump, the difference between the flow rate of the etching liquid 3 sprayed from the liquid outlet 310 closer to the liquid supply pump and the flow rate of the etching liquid 3 sprayed from the liquid outlet 310 farther from the liquid supply pump is reduced. Thus, the difference in the flow rate of the etching liquid 3 above the workpiece 2 to be etched can be reduced, thereby improving the distribution uniformity of the diameter size of each through hole 2a of the workpiece 2 to be etched after etching.
[0083] In the present disclosure, although the present disclosure has been described with reference to exemplary embodiments, it should be understood that the present disclosure is not limited to the specific embodiments described and shown in detail herein. Those skilled in the art may make various changes to the exemplary embodiments without departing from the scope defined by the claims of the present disclosure.
[0084] The features mentioned and / or shown in the above description of the exemplary embodiments of the present disclosure may be combined in the same or similar manner into one or more other embodiments, combined with the features in other embodiments or substituted for the corresponding features in other embodiments. The technical solutions obtained by these combinations or substitutions shall also be deemed to be included in the protection scope of the present disclosure.
Claims
1. An etching device for etching holes in a workpiece using an etching liquid, characterized in that: include: Tank body; A support layer is arranged in the tank body to separate the tank body into an upper tank body and a lower tank body, the support layer has a hole connecting the upper tank body and the lower tank body, and is used to support the workpiece to be etched above the hole; A liquid outlet pipeline, comprising a liquid outlet, wherein the liquid outlet is located in the upper tank body and radially outside a region of the support layer for supporting the workpiece to be etched, so as to provide the etching liquid to the upper tank body; as well as The baffle is arranged between the liquid outlet and the area, and is arranged to allow the etching liquid to bypass the baffle and reach above the supported workpiece to be etched.
2. The etching device according to claim 1, characterized in that: The liquid outlet faces away from the baffle and toward the side wall of the upper tank body.
3. The etching device according to claim 1 or 2, characterized in that: The baffle encloses the entire region from the radially outer side of the region.
4. The etching device according to claim 1 or 2, characterized in that: A bottom surface of the baffle is spaced apart from an upper surface of the support layer.
5. The etching device according to claim 4, characterized in that: The bottom surface of the baffle is spaced from the upper surface of the support layer by a distance less than or equal to 11 mm.
6. The etching device according to claim 1 or 2, characterized in that: The height of the top surface of the baffle is greater than the height of the liquid outlet pipe.
7. The etching device according to claim 1 or 2, characterized in that: The liquid outlet pipe comprises a plurality of liquid outlets, and the plurality of liquid outlets are arranged on the circumferential wall of the liquid outlet pipe and distributed along the axial direction of the liquid outlet pipe.
8. The etching device according to claim 7, characterized in that: The baffle extends to cover the plurality of liquid outlets.
9. The etching device according to claim 7, characterized in that: The top of the baffle has a sawtooth structure, and the sawtooth structure includes a plurality of teeth, and the plurality of teeth are arranged on the top surface of the baffle and distributed along a direction parallel to the axial direction.
10. The etching device according to claim 9, characterized in that: The distribution density of the plurality of teeth gradually decreases along the flow direction of the etching liquid in the liquid outlet pipe.