Simple splitting device and method for separating crystal grains after SiC laser implicit cutting

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a simple splitting device and method for separating crystal grains after SiC laser implicit cutting. Comprising a machine body, a visual positioning mechanism used for observation and microscopic amplification is arranged at the upper end of the machine body, a double-chopper alignment mechanism is longitudinally and slidably arranged on the machine body, a single-chopper alignment mechanism is arranged on the machine body, and the double-chopper alignment mechanism performs grain separation on SiC subjected to laser implicit cutting on the single-chopper alignment mechanism; the device has the beneficial effects that the problems that when SiC is broken by hands generally, the distances between stress points acting on the two sides of the SiC and the laser scribing modified position are different, and personnel exert non-uniform force sometimes, so that a product does not crack along the laser scribing modified position, the edge breakage of a sample is serious, even the sample is broken, and the production yield is greatly influenced are solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and more particularly to a simple splitting device and method for separating crystal grains after laser hidden cutting of SiC. Background Art

[0002] As a typical third-generation semiconductor material, SiC has the characteristics of wide band gap, high carrier mobility, high thermal conductivity, and large critical breakdown voltage. Therefore, it is widely used in power devices, radio frequency devices, aerospace, intelligent manufacturing, nuclear energy and other fields. However, SiC wafers always need to be cut into different sizes to meet actual use requirements. At present, the main method of cutting SiC wafers in industry is diamond wheel cutting. Cutting SiC samples with diamond wheels can achieve zero taper and smooth cutting sections, but SiC is a typical hard and brittle material with a Mohs hardness of up to 9 and a low fracture toughness of 1.4-1.8Mpa.m1 / 2;

[0003] Therefore, there are still some disadvantages when cutting SiC with a diamond wheel, such as low feed speed, diamond tool wear, large edge damage, and a relatively large incision width of 50um; similarly, the patent with publication number CN111438442A discloses a method of processing the SiC surface using a nanosecond ultraviolet laser with a wavelength of 355nm and combining it with subsequent splitting knife three-point bending for splitting. The SiC surface has a strong absorption characteristic for this laser light source, and its surface is grooved by laser scanning, and the SiC is separated into small grains along the grooves using a sharp splitting knife. Although this method can separate SiC wafers into small grains, the splashing processing chips during the laser grooving process will contaminate the sample surface. In addition, the sharp splitting knife may also damage the sample surface during the splitting process;

[0004] Invisible laser cutting is a cutting technology that does not damage the upper and lower surfaces of the sample. By focusing the laser beam inside the sample, a photochemical reaction occurs inside the sample under the high temperature of the laser to form a modified layer, and microcracks are formed in the longitudinal direction of the modified layer, which solves the problems of thermal damage to the material, wide cutting seams, and surface contamination during the cutting process. However, the modified SiC still has a strong bonding force inside, and external force is needed to accurately separate it along the laser scanning path.

[0005] At present, the main source of external force is manual bending. When people bend SiC with both hands, the force points on both sides of SiC are sometimes at different distances from the laser-marked modified area, and people sometimes apply uneven force, resulting in the product not cracking along the laser-marked modified area, causing serious edge collapse or even breakage of the sample, which greatly affects the production yield. Summary of the invention

[0006] Therefore, the technical problem to be solved by the present invention is to overcome the existing technology of laser cutting SiC wafers, using a slicing device and method for separating grains, replacing manual slicing, and improving the yield of SiC grain separation.

[0007] To this end, the technical solution adopted is a simple splitting device and method for separating grains after laser hidden cutting of SiC of the present invention, including a visual positioning mechanism for observation and microscopic magnification arranged at the upper end of the fuselage, a double-chopping knife alignment mechanism longitudinally slidingly arranged on the fuselage, and a single-chopping knife alignment mechanism arranged on the fuselage, and the double-chopping knife alignment mechanism separates grains of SiC after laser hidden cutting on the single-chopping knife alignment mechanism.

[0008] Preferably, the visual positioning mechanism includes a display, a longitudinal displacement guide rail, a movable slider, an elastic assembly, a driving gear, a restraining ring structure and a high-definition lens. The longitudinal displacement guide rail is fixed to the fuselage, a movable slider is longitudinally slidably arranged on the longitudinal displacement guide rail, an elastic assembly is provided on the movable slider via a threaded connection, a driving gear for driving the movable slider to move along the longitudinal displacement guide rail is provided on the movable slider, a restraining ring structure is fixed on the movable slider, a high-definition lens is fixed to the restraining ring structure via a base, the upper end of the high-definition lens is electrically connected to the display, and the display is fixed on the movable slider.

[0009] Preferably, the fuselage includes an arm and a base, the arm is fixed on the base, a plurality of supporting bases are fixed to the lower end of the base, and a longitudinal displacement guide rail is fixed to the upper end of the arm.

[0010] Preferably, the double-chopping knife alignment mechanism includes a dovetail groove displacement slide, a sheet metal structure and a double-chopping knife structure. The dovetail groove displacement slide is fixed on the machine arm, and a sheet metal structure is provided on the dovetail groove displacement slide for longitudinal sliding. The sheet metal structure is driven and adjusted by a side gear rod to slide longitudinally on the dovetail groove displacement slide, and a double-chopping knife structure is fixed at the lower end of the sheet metal structure.

[0011] Preferably, a hollow rectangle one is provided on the sheet metal structure, and a hollow rectangle two is provided on the double-chopping knife structure. Both hollow rectangle one and hollow rectangle two are provided at the junction of the sheet metal structure and the double-chopping knife structure. The lower end of the double-chopping knife structure is provided with a contact end arc outer contour, and the contact end arc outer contour is in an arc shape.

[0012] Preferably, the single-chopping knife alignment mechanism comprises a stage, a support assembly, a single-chopping knife structure, a support frame, a sheet metal structure and an XY-axis cross roller guide, the XY-axis cross roller guide and the support frame are both fixed on a base, an X-axis drive adjustment device and a Y-axis drive adjustment device are arranged in the XY-axis cross roller guide; a sheet metal structure is arranged at the upper end of the XY-axis cross roller guide, four support assemblies are plugged and fixed on the sheet metal structure, and a stage is fixed at the upper ends of the four support assemblies; a support frame is gap-fitted between the four support assemblies, a single-chopping knife structure is fixed at the middle end of the support frame, a contact end profile is arranged at the upper end of the single-chopping knife structure, a high-strength adhesive film is arranged at the upper end of the stage, a hollow rectangular area is arranged in the center of the stage and the high-strength adhesive film for plugging through the contact end profile of the single-chopping knife structure, and the contact end profile is in the shape of an arc.

[0013] Preferably, a SiC sample is arranged on the described eutectic film, and there are traces of laser modification of the SiC sample after laser hidden cutting inside the SiC sample, and there are marks indicating corresponding traces on the surface.

[0014] Preferably, the support assembly includes a linear buffer shaft and a spring seat, the spring seat is plugged and fixed on the sheet metal structure, a linear buffer shaft is plugged in the spring seat, the linear buffer shaft is wrapped by an elastic assembly inside the spring seat, and four linear buffer shafts are fixed on the loading platform.

[0015] Preferably, an elastic pocket is laid between the described PU film and the loading platform, finger grooves are arranged on all sides of the loading platform, and the elastic pocket is clamped between the elastic clamp and the finger grooves of the loading platform. The elastic clamp includes a fixed shaft seat, a clamping plate and a torsion spring. The fixed shaft seat is fixed to the lower end of the loading platform, and a rotating shaft is fixed in the fixed shaft seat. The clamping plate rotates on the rotating shaft through a torsion spring, one end of the torsion spring is fixed to the lower end of the clamping plate, and the other end of the torsion spring is fixed in the fixed shaft seat.

[0016] A simple splitting method for separating crystal grains after laser hidden cutting of SiC, comprising the following steps:

[0017] S1: Place the sample: Place the SiC sample cut by invisible laser on the PU on the stage, and align the laser modified trace of the SiC sample with the hollow rectangular area of ​​the stage;

[0018] S2: Sample visual imaging: adjust the drive gear until the display shows a clearly focused SiC sample and fix it;

[0019] S3: Adjust the single cleaver alignment system: observe the microscopic image on the monitor and further control the movement of the SiC sample to facilitate the single cleaver structure to align with the laser modification traces inside the SiC sample;

[0020] S4: Adjust the double cleaver alignment system: Regulate the downward pressure applied to the SiC sample by the double cleaver structure, and apply an upward supporting force to the laser modified trace of the SiC sample through the single cleaver structure. When the external force reaches the fracture threshold of the laser modified trace of the SiC sample, the two sides of the rubber bend downward and receive the split SiC grains to complete the grain separation.

[0021] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures specifically pointed out in this application document.

[0022] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0024] Figure 1 It is a schematic diagram of the overall structure of the present invention in the first direction;

[0025] Figure 2 It is a structural schematic diagram of the visual positioning mechanism of the present invention;

[0026] Figure 3 It is a structural schematic diagram of the fuselage of the present invention;

[0027] Figure 4 It is a structural schematic diagram of the double-riving knife alignment mechanism of the present invention;

[0028] Figure 5 It is a structural schematic diagram of the double-wedge structure of the present invention;

[0029] Figure 6 It is a structural schematic diagram of the single-riving knife alignment mechanism of the present invention;

[0030] Figure 7 is a schematic structural diagram of a support assembly of the present invention;

[0031] Figure 8 It is a schematic structural diagram of the stage of the present invention;

[0032] Fig. 9 It is a structural schematic diagram of a single cleaver structure of the present invention;

[0033] Fig.10 It is a structural schematic diagram of the elastic pocket of the present invention;

[0034] Fig.11It is a structural schematic diagram of the elastic clip of the present invention.

[0035] In the figure: visual positioning mechanism 1; display 11; longitudinal displacement guide rail 12; moving slider 13; tension assembly 14; driving gear 15; restraint ring structure 16; high-definition lens 17;

[0036] Body 2; Arm 21; Base 22;

[0037] Double-chopping knife alignment mechanism 3; dovetail groove displacement slide 31; sheet metal structure 32; double-chopping knife structure 33; hollow rectangle 1 321; hollow rectangle 2 331; contact end arc outer contour 332;

[0038] Single-chopping knife alignment mechanism 4; SiC sample 41; SiC internal laser modification traces 411; Ulticollar film 42; stage 43; support assembly 44; linear buffer shaft 441; spring seat 442; single-chopping knife structure 45; contact end profile 451; support frame 46; sheet metal structure 47; XY-axis cross roller guide 48; hollow rectangular area 49.

[0039] Elastic pocket 5; elastic clip 6; fixed shaft seat 61; clamping plate 62; torsion spring 63. DETAILED DESCRIPTION

[0040] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0041] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "middle", "top", "bottom", "inside", "outside", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. The terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0042] In addition, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0043] In the present application, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature. Specific implementation method one:

[0045] like Figure 1 — Fig.11 As shown, a simple splitting device and method for separating grains after laser hidden cutting of SiC includes a visual positioning mechanism 1 for observation and microscopic magnification provided at the upper end of a body 2, a double-chopping knife alignment mechanism 3 is longitudinally slidably provided on the body 2, and a single-chopping knife alignment mechanism 4 is provided on the body 2. The double-chopping knife alignment mechanism 3 separates grains of SiC after laser hidden cutting on the single-chopping knife alignment mechanism 4.

[0046] The working principle and beneficial effects of this embodiment are as follows: by placing the SiC sample 41 cut by invisible laser on the urethane foam 42 of the single cleaving knife alignment mechanism 4, the laser modification trace 411 inside the SiC sample on the SiC sample 41 is easily observed and aligned by adjusting the visual positioning mechanism 1, and the lateral and longitudinal positions of the SiC sample 41 are adjusted by adjusting the single cleaving knife alignment mechanism 4; the high-definition camera 17 of the visual positioning mechanism 1 is fixed for real-time observation, and the double cleaving knife alignment mechanism 3 is adjusted to slowly move downward to further control the double cleaving knife structure 33 of the double cleaving knife alignment mechanism 3 Move downward until the double cleaving knife structure 33 contacts the surface of the left and right sides of the laser modified trace 411 of the SiC sample. The double cleaving knife structure 33 applies downward pressure to the SiC sample 41. The stage 43 on the single cleaving knife alignment mechanism 4 slowly moves downward under the buffering effect. The single cleaving knife structure 45 on the single cleaving knife alignment mechanism 4 applies an upward supporting force at the SiC laser modified trace 411. When the mechanical external force applied by the cleaving knife reaches the fracture threshold of 10-20N at the SiC laser scribing point 441, the two sides of the urea 42 bend downward and receive the split SiC grains to complete the grain separation. Specific implementation method 2:

[0048] like Figure 1 — Fig.11 As shown, a simple splitting device and method for separating grains after laser hidden cutting of SiC, the visual positioning mechanism 1 includes a display 11, a longitudinal displacement guide 12, a movable slider 13, an elastic component 14, a driving gear 15, a restraining ring structure 16 and a high-definition lens 17, the longitudinal displacement guide 12 is fixed on the fuselage 2, a movable slider 13 is longitudinally slidably arranged on the longitudinal displacement guide 12, the movable slider 13 is threadedly connected with the elastic component 14, the movable slider 13 is provided with a driving gear 15 for driving the movable slider 13 to move on the longitudinal displacement guide 12, a restraining ring structure 16 is fixed on the movable slider 13, a high-definition lens 17 is fixed on the restraining ring structure 16 through a base, the upper end of the high-definition lens 17 is electrically connected to the display 11, and the display 11 is fixed on the movable slider 13.

[0049] The working principle and beneficial effects of this embodiment are as follows: after placing the SiC sample 41 that has undergone invisible laser cutting on the urethane foam 42 of the single splitting knife alignment mechanism 4, the driving gear 15 of the movable slider 13 is rotated on the longitudinal displacement guide rail 12, and then the longitudinal height position of the movable slider 13 on the longitudinal displacement guide rail 12 is adjusted through meshing transmission, and then the restraining ring structure 16 and the high-definition lens 17 are locked and fixed by rotating the tensioning component 14, and then the height of the high-definition lens 17 is used to adjust the display 11 in real time for observation of splitting control. Specific implementation method three:

[0051] like Figure 1 — Fig.11 As shown, a simple splitting device and method for separating grains after laser hidden cutting of SiC, the body 2 includes an arm 21 and a base 22, the arm 21 is fixed on the base 22, a plurality of supporting bases are fixed at the lower end of the base 22, and a longitudinal displacement guide rail 12 is fixed at the upper end of the arm 21.

[0052] The working principle and beneficial effects of this embodiment are as follows: a plurality of supporting bases are fixed at the lower end of the base 22 to facilitate the balanced observation support device for splitting, and the setting of the arm 21 facilitates the support and adjustment of the double-chopping knife alignment mechanism 3 and the visual positioning mechanism 1. Specific implementation method four:

[0054] like Figure 1 — Fig.11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC, the double-chopping knife alignment mechanism 3 includes a dovetail groove displacement slide 31, a sheet metal structure 32 and a double-chopping knife structure 33, the dovetail groove displacement slide 31 is fixed on the machine arm 21, a sheet metal structure 32 is longitudinally slidably arranged on the dovetail groove displacement slide 31, the sheet metal structure 32 is driven and adjusted by a side gear rod to longitudinally slide on the dovetail groove displacement slide 31, and a double-chopping knife structure 33 is fixed to the lower end of the sheet metal structure 32.

[0055] The working principle and beneficial effects of this embodiment are as follows: the sheet metal structure 32 and the double-chopping knife structure 33 are supported by fixing the dovetail groove displacement slide 31 on the machine arm 21, and the gear rod on the rotating side of the sheet metal structure 32 drives the adjustment, and then the gear rack meshes and slides longitudinally on the dovetail groove displacement slide 31, thereby realizing the adjustment of the longitudinal sliding of the sheet metal structure 32 and the double-chopping knife structure 33, and then realizing the extrusion and splitting of the laser invisible cut SiC sample 41 placed on the urethane foam 42 of the single-chopping knife alignment mechanism 4. Specific implementation method five:

[0057] like Figure 1 — Fig.11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC, a hollow rectangle 1 321 is provided on the sheet metal structure 32, a hollow rectangle 2 331 is provided on the double cleaver structure 33, the hollow rectangle 1 321 and the hollow rectangle 2 331 are both provided at the junction of the sheet metal structure 32 and the double cleaver structure 33, a contact end arc outer contour 332 is provided at the lower end of the double cleaver structure 33, and the contact end arc outer contour 332 is in an arc shape.

[0058] The working principle and beneficial effects of this embodiment are as follows: a hollow rectangle 1 321 and a hollow rectangle 2 331 are present at the connection between the double cleaving knife structure 33 and the sheet metal structure 32 to ensure that the camera 17 can successfully shoot the sample surface through the hollow rectangle 1 321 and the hollow rectangle 2 331. In addition, in the subsequent splitting process, the double cleaving knife structure 33 will make the contact end arc outer contour 332 that contacts the upper surface of the SiC sample 41 into an arc shape to avoid damage to the SiC sample surface when the tip with excessive curvature presses down; the corresponding contact end arc outer contour 332 at the lower end of the double cleaving knife structure 33 can be formed by splitting, and the distance between the contact end arc outer contours 332 can be symmetrically adjusted through the forward and reverse screw adjustment cooperation, thereby realizing the adjustment of the extrusion symmetrical position to adapt to the use of SiC samples 41 of different sizes. Specific implementation method six:

[0060] like Figure 1 — Fig.11 As shown, a simple splitting device and method for separating grains after laser hidden cutting of SiC is shown, the single splitting knife alignment mechanism 4 includes a stage 43, a support assembly 44, a single splitting knife structure 45, a support frame 46, a sheet metal structure 47 and an XY axis cross roller guide 48, the XY axis cross roller guide 48 and the support frame 46 are both fixed on the base 22, and an X-axis drive adjustment device and a Y-axis drive adjustment device are arranged in the XY axis cross roller guide 48; the upper end of the XY axis cross roller guide 48 is provided with a sheet metal structure 47, and the sheet metal structure Four support components 44 are plugged and fixed on the component 47, and a loading platform 43 is fixed to the upper ends of the four support components 44; a support frame 46 is gap-fitted between the four support components 44, a single cleaving knife structure 45 is fixed to the middle end of the support frame 46, and a contact end profile 451 is provided at the upper end of the single cleaving knife structure 45, and a high-strength adhesive film 42 is provided at the upper end of the loading platform 43, and a hollow rectangular area 49 is provided in the center of the loading platform 43 and the high-strength adhesive film 42 for plugging through the contact end profile 451 of the single cleaving knife structure 45, and the contact end profile 451 is in the shape of an arc.

[0061] The working principle and beneficial effects of this embodiment are as follows: the movement of the stage 43 is controlled by an XY-axis cross roller guide 48 fixed on the base 22, a sheet metal structure 47 is provided on the XY-axis cross roller guide 48 and used to receive the stage 43, and an X-axis drive adjustment device and a Y-axis drive adjustment device are provided in the XY-axis cross roller guide 48 on the XY-axis cross roller guide 48, thereby facilitating the adjustment of the XY-axis on the plane, and then adjusting the XY-axis of the stage 43, and then adjusting the alignment position of the SiC sample 41 on the stage 43;

[0062] The four support components 44 embedded in the sheet metal structure 47 and supporting the stage 43 include a linear buffer shaft 441 and a spring seat 442. The spring seat 442 is plugged and fixed on the sheet metal structure 47. The spring seat 442 is plugged with a linear buffer shaft 441. The linear buffer shaft 441 is wrapped by an elastic component inside the spring seat 442. The four linear buffer shafts 441 are fixed on the stage 43. The SiC sample 41 is pressed under the double wedge structure to cause the stage 43 to It plays a buffering role when the stage moves downward; there is a hollow rectangular area 49 in the center of the stage 43 and the adhesive film 42 structure to ensure that the single cleaving knife structure 45 under the stage can successfully contact the lower surface of the SiC sample 41 through the hollow area to provide an upward support force for the sample; in addition, in the subsequent splitting process, the contact end contour 451 of the single cleaving knife structure 45 in contact with the lower surface of the SiC sample 41 is in an arc shape to avoid damage to the surface of the SiC sample 41 when the tip with excessive curvature presses down. Specific implementation method seven:

[0064] like Figure 1 — Fig.11 As shown, a simple splitting device and method for separating grains after laser hidden cutting of SiC is provided, wherein a SiC sample 41 is arranged on the described PU film 42, and the surface of the SiC sample 41 has internal laser modification marks 411 of the SiC after laser hidden cutting.

[0065] The working principle and beneficial effects of this embodiment are as follows: by placing the SiC sample 41 on the PU film 42 for easy extrusion and collection, the two sides of the PU film 42 are bent downward to receive the split SiC grains; the SiC sample 41 that has been laser cut is marked with the laser modification marks 411 inside the SiC, thereby facilitating the force application at the corresponding position for splitting. Specific implementation eight:

[0067] like Figure 1 — Fig.11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC is shown, the support component 44 includes a linear buffer shaft 441 and a spring seat 442, the spring seat 442 is plugged and fixed on the sheet metal structure 47, a linear buffer shaft 441 is plugged in the spring seat 442, the linear buffer shaft 441 is wrapped by an elastic component inside the spring seat 442, and four linear buffer shafts 441 are fixed on the stage 43.

[0068] The working principle and beneficial effects of this embodiment are as follows: by arranging a linear buffer shaft 441 and a spring seat 442 in the support assembly 44, the linear buffer shaft 441 in the spring seat 442 is provided with an upward buffering force in the downward process, so that the stage 43 is plugged and fixed on the sheet metal structure 47, and a linear buffer shaft 441 is inserted and arranged in the spring seat 442. The linear buffer shaft 441 is wrapped by an elastic assembly inside the spring seat 442, and four linear buffer shafts 441 are all fixed on the stage 43, so as to realize an upward buffering force on the stage 43 in the downward process, which is used for resetting and buffering the downward force and is convenient for splitting the extended upward position of the single chopping knife structure 45. Specific implementation method nine:

[0070] like Figure 1 — Fig.11 As shown, a simple splitting device and method for separating grains after laser stealth cutting of SiC, an elastic pocket 5 is laid between the PU film 42 and the stage 43, finger grooves are arranged on all sides of the stage 43, the elastic pocket 5 is clamped between the elastic clamp 6 and the finger grooves of the stage 43, the elastic clamp 6 includes a fixed shaft seat 61, a clamping plate 62 and a torsion spring 63, the fixed shaft seat 61 is fixed to the lower end of the stage 43, a rotating shaft is fixed in the fixed shaft seat 61, the clamping plate 62 is rotated on the rotating shaft through the torsion spring 63, one end of the torsion spring 63 is fixed to the lower end of the clamping plate 62, and the other end of the torsion spring 63 is fixed in the fixed shaft seat 61.

[0071] The working principle and beneficial effects of this embodiment are as follows: when the grains of the SiC sample 41 to be split are too small and inconvenient to be recycled and collected, an elastic pocket 5 is laid between the polyurethane film 42 and the stage 43, and the sealing and elastic setting of the elastic pocket 5 facilitates the collection of grains with too small grains. At the same time, by using the elastic clip 6 that is evenly and symmetrically arranged, the lower end of the clamping plate 62 is squeezed on the finger groove, the upper end of the clamping plate 62 is opened, and the elastic pocket 5 is clamped between the open clamping plate 62 and the finger groove of the stage 43. By setting the torsion spring 63 in the fixed shaft seat 61, a clamping force is provided, thereby achieving the effect of clamping and fixing the elastic pocket 5. In the process of splitting the grains, the elastic pocket 5 in the center is used in the splitting process by its elastic characteristics. After the splitting is completed, the open clamping plate 62 is loosened, and the elastic pockets 5 around it are loosened to collect the split grains and the polyurethane film 42, so as to prevent the grains with too small volume from leaking or being lost. Specific implementation method ten:

[0073] like Figure 1 — Fig.11 As shown in the figure, a simple splitting method for separating grains after laser cutting of SiC is shown in the figure:

[0074] S1: Place the sample: Place the SiC sample 41 to be cut by invisible laser on the PU 42 on the stage, and align the laser cutting track with the rectangular hollow area of ​​the stage to prevent the subsequent single cleaver structure from being able to contact the laser modified trace 411 inside the SiC through the hollow area;

[0075] S2: Sample visual imaging: Regulate the driving gear 15 to control the movable slide 13 to move up and down along the longitudinal displacement guide rail 12. The high-definition camera 17 moves up and down along the movable slide 13 until the display 11 displays a clearly focused SiC sample, and tighten the elastic assembly 14 to fix the high-definition camera 17;

[0076] S3: Adjust the single cleaver alignment system: observe the microscopic image on the display 11, and further control the movement of the SiC sample 41 on the stage by controlling the XY-axis cross roller guide 48, so that the subsequent single cleaver structure 45 passes through the hollow rectangular area and aligns with the laser modification trace 411 inside the SiC sample;

[0077] S4: Adjust the double-chopping knife alignment system: regulate the dovetail slide 31 to move slowly downward and further control the double-chopping knife structure 33 to move downward until the double-chopping knife structure 33 contacts the surface of the left and right sides of the laser modified trace 411 of the SiC sample. The double-chopping knife structure 33 applies downward pressure to the SiC sample 41, and the stage 43 moves slowly downward under the buffering action of the linear bearing 441 and the spring 442 surrounding the linear bearing. The single-chopping knife structure 45 applies an upward supporting force at the SiC laser modified trace 411. When the mechanical external force applied by the chopping knife reaches the fracture threshold of 10-20N at the SiC laser scribing 441, the two sides of the urethane foam 42 bend downward and receive the split SiC grains to complete the grain separation.

[0078] The above description is not a limitation of the present invention, and the present invention is not limited to the above examples. Changes, modifications, additions or substitutions made by ordinary technicians in this technical field within the essential scope of the present invention also fall within the protection scope of the present invention.

Claims

1. A simple splitting device for separating crystal grains after laser cutting of SiC, characterized in that: The invention comprises a visual positioning mechanism (1) for observation and microscopic magnification arranged at the upper end of a machine body (2), a double-wedge alignment mechanism (3) arranged on the machine body (2) for longitudinal sliding, a single-wedge alignment mechanism (4) arranged on the machine body (2), and the double-wedge alignment mechanism (3) performs grain separation on the SiC after laser hidden cutting on the single-wedge alignment mechanism (4).

2. A simple splitting device for separating grains after laser hidden cutting of SiC according to claim 1, characterized in that: The visual positioning mechanism (1) comprises a display (11), a longitudinal displacement guide rail (12), a movable slider (13), an elastic component (14), a driving gear (15), a restraining ring structure (16) and a high-definition lens (17); the longitudinal displacement guide rail (12) is fixed on the body (2); a movable slider (13) is longitudinally slidably arranged on the longitudinal displacement guide rail (12); a tightening component (14) is provided on the movable slider (13) through a threaded connection; a driving gear (15) is provided on the movable slider (13) for driving the movable slider (13) to move on the longitudinal displacement guide rail (12); a restraining ring structure (16) is fixed on the movable slider (13); a high-definition lens (17) is fixed on the restraining ring structure (16) through a base; the upper end of the high-definition lens (17) is electrically connected to the display (11); and the display (11) is fixed on the movable slider (13).

3. A simple splitting device for separating crystal grains after laser hidden cutting of SiC according to claim 2, characterized in that: The fuselage (2) comprises an arm (21) and a base (22), the arm (21) is fixed on the base (22), a plurality of supporting bases are fixed at the lower end of the base (22), and a longitudinal displacement guide rail (12) is fixed at the upper end of the arm (21).

4. A simple splitting device for separating grains after laser hidden cutting of SiC according to claim 3, characterized in that: The double-chopping knife alignment mechanism (3) comprises a dovetail groove displacement slide (31), a sheet metal structure (32) and a double-chopping knife structure (33); the dovetail groove displacement slide (31) is fixed on the machine arm (21); a sheet metal structure (32) is longitudinally slidably arranged on the dovetail groove displacement slide (31); the sheet metal structure (32) is driven and adjusted to longitudinally slide on the dovetail groove displacement slide (31) by a side gear rod; and the double-chopping knife structure (33) is fixed at the lower end of the sheet metal structure (32).

5. A simple splitting device for separating crystal grains after laser cutting of SiC according to claim 4, characterized in that: The sheet metal structure (32) is provided with a hollow rectangle one (321), and the double-chopping knife structure (33) is provided with a hollow rectangle two (331). The hollow rectangle one (321) and the hollow rectangle two (331) are both provided at the junction of the sheet metal structure (32) and the double-chopping knife structure (33). The lower end of the double-chopping knife structure (33) is provided with a contact end circular arc outer contour (332), and the contact end circular arc outer contour (332) is in the shape of a circular arc.

6. The simple splitting device for separating crystal grains after laser hidden cutting of SiC according to claim 4, characterized in that: The single-chopping knife alignment mechanism (4) comprises a stage (43), a support assembly (44), a single-chopping knife structure (45), a support frame (46), a sheet metal structure (47) and an XY-axis cross roller guide (48). The XY-axis cross roller guide (48) and the support frame (46) are both fixed on a base (22). An X-axis drive adjustment device and a Y-axis drive adjustment device are arranged in the XY-axis cross roller guide (48). A sheet metal structure (47) is arranged at the upper end of the XY-axis cross roller guide (48). Four support assemblies (44) are plugged and fixed on the sheet metal structure (47). ), a loading platform (43) is fixed at the upper ends of the four supporting components (44); a support frame (46) is gap-fitted between the four supporting components (44); a single cleaver structure (45) is fixed at the middle end of the support frame (46); a contact end profile (451) is arranged at the upper end of the single cleaver structure (45); a high-strength adhesive film (42) is arranged at the upper end of the loading platform (43); a hollow rectangular area (49) is arranged in the center of the loading platform (43) and the high-strength adhesive film (42) for plugging through the contact end profile (451) of the single cleaver structure (45); the contact end profile (451) is in the shape of an arc.

7. A simple splitting device for separating crystal grains after laser hidden cutting of SiC according to claim 6, characterized in that: A SiC sample (41) is arranged on the eutectic film (42), and the SiC sample (41) has internal laser modification marks (411) of SiC that have been laser cut.

8. The simple splitting device for separating crystal grains after laser hidden cutting of SiC according to claim 6, characterized in that: The support assembly (44) includes a linear buffer shaft (441) and a spring seat (442). The spring seat (442) is plugged and fixed on the sheet metal structure (47). A linear buffer shaft (441) is plugged into the spring seat (442). The linear buffer shaft (441) is wrapped by an elastic assembly inside the spring seat (442). The four linear buffer shafts (441) are all fixed on the stage (43).

9. The simple splitting device for separating crystal grains after laser hidden cutting of SiC according to claim 7, characterized in that: An elastic pocket (5) is laid between the described high-strength rubber film (42) and the loading platform (43), and finger grooves are arranged on all sides of the loading platform (43). The elastic pocket (5) is clamped between the elastic clamp (6) and the finger grooves of the loading platform (43). The elastic clamp (6) includes a fixed shaft seat (61), a clamping plate (62) and a torsion spring (63). The fixed shaft seat (61) is fixed to the lower end of the loading platform (43), and a rotating shaft is fixed in the fixed shaft seat (61). The clamping plate (62) rotates on the rotating shaft through the torsion spring (63), one end of the torsion spring (63) is fixed to the lower end of the clamping plate (62), and the other end of the torsion spring (63) is fixed in the fixed shaft seat (61).

10. A simple splitting method for separating grains after laser hidden cutting of SiC, applicable to a simple splitting device for separating grains after laser hidden cutting of SiC as claimed in any one of claims 1 to 9, characterized in that: The following steps are involved: S1: Place the sample: Place the SiC sample (41) cut by invisible laser on the PU resin (42) on the stage, and align the laser modified trace (411) of the SiC sample with the hollow rectangular area (49) of the stage; S2: Sample visual imaging: adjusting the driving gear (15) until the display (11) shows a clearly focused SiC sample (41) and fixing it; S3: Adjusting the single wedge alignment system: observing the microscopic image on the display (11), further controlling the movement of the SiC sample (41), and facilitating the single wedge structure (45) to align with the laser modification trace (411) inside the SiC sample; S4: Adjusting the double cleaver alignment system: regulating the double cleaver structure (33) to apply downward pressure to the SiC sample (41), and applying an upward supporting force at the laser modified trace (411) of the SiC sample through the single cleaver structure (45). When the external force reaches the fracture threshold of the laser modified trace (411) of the SiC sample, the two sides of the polyurethane (42) bend downward and receive the split SiC grains, thereby completing the grain separation.

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