Single-pole single-throw switch circuit suitable for broadband application and electronic equipment

Abstract

The invention discloses a single-pole single-throw switch circuit suitable for broadband application and electronic equipment. The single-pole single-throw switch circuit comprises a first microstrip line, a first series-parallel connection combination module, a second microstrip line, a second series-parallel connection combination module, a third microstrip line, a third series-parallel connection combination module and a fourth microstrip line. The three series-parallel connection combination modules are adopted to form the single-pole single-throw switch circuit, the working state of the single-pole single-throw switch circuit is controlled by controlling voltage, and when the single-pole single-throw switch circuit is in a turn-off state, the parallel connection parts in the series-parallel connection combination modules lead leakage signals to the ground, so that optimization of isolation under high frequency is achieved, and the reliability of the switch is improved. The method is applicable to a broadband scene; the series-parallel connection width combined transistor in the active region in the series-parallel connection combined module is a combined device of an equivalent series connection transistor and an equivalent parallel connection transistor, the effect that one device serves as a circuit branch is achieved through the device, the circuit layout area is greatly saved, and cost is reduced.

Description

Technical Field

[0001] The invention belongs to the technical field of radio frequency circuits, and in particular relates to a single-pole single-throw switch circuit and electronic equipment suitable for wide-band applications. Background Art

[0002] In wireless communication transceiver systems, high-performance switches are key modules that control the system's transmit and receive signals. For switching devices, it is necessary to take into account indicators such as insertion loss, isolation, and power capacity. Currently, RF switching circuits designed using GaN HEMT (High electron mobility transistor) devices have been widely studied and applied. In 2022, the University of Electronic Science and Technology of China proposed a high-power, miniaturized, high-order switching topology using 100nm silicon-based GaN HEMT devices. In 2023, the University of Notre Dame used integrated Hf 0.5 Zr 0.5 GaN HEMT with O2 (HZO) ferroelectric gate stack is used to improve the performance of RF switches at millimeter wave frequencies. In 2024, Branden University of Technology in Germany designed and manufactured a power amplifier with a DC power switch and an RF SPST switch using 0.15μm silicon-based gallium nitride technology. With the continuous evolution of mobile communication technology, the RF front-end is facing more and more challenges. The widespread application of 5G technology requires the RF front-end to support higher frequency bands, larger bandwidths and more complex modulation methods. The RF switch is an important part of the RF front-end, and the improvement of the requirements for the RF front-end has also increased the performance requirements for the RF switch.

[0003] On the one hand, the existing RF circuit uses independent field-effect transistors as RF front-end selection switches, which seriously deteriorates the isolation at high frequencies and is not conducive to the broadband application of RF circuits; on the other hand, traditional monolithic microwave integrated circuit designs mostly use traveling wave transmission structures to expand the operating frequency band of RF switches, but the area of ​​microstrip lines introduced in this structure is large, and the layout is more complicated, which may increase the influence of electromagnetic effects between microstrips. Summary of the invention

[0004] In order to solve the above problems existing in the prior art, the present invention provides a single-pole single-throw switch circuit and electronic equipment suitable for wideband applications. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0005] In a first aspect, the present invention provides a single-pole single-throw switch circuit suitable for wideband applications, comprising:

[0006] A first microstrip line Z1, a first series-parallel combination module, a second microstrip line Z2, a second series-parallel combination module, a third microstrip line Z3, a third series-parallel combination module and a fourth microstrip line Z4; wherein,

[0007] The first end of the first microstrip line Z1 serves as the input end Port1 of the single-pole single-throw switch circuit, and the second end is connected to the input end of the first series-parallel combination module;

[0008] The first control voltage input terminal of the first series-parallel combination module is connected to the control voltage V CTL1 , the second control voltage input terminal is connected to the control voltage V CTL2 , the output end is connected to the first end of the second microstrip line Z2;

[0009] The second end of the second microstrip line Z2 is connected to the input end of the second series-parallel combination module;

[0010] The first control voltage input terminal of the second series-parallel combination module is connected to the control voltage V CTL1 , the second control voltage input terminal is connected to the control voltage V CTL2 , the output end is connected to the first end of the third microstrip line Z3;

[0011] The second end of the third microstrip line Z3 is connected to the input end of the third series-parallel combination module;

[0012] The first control voltage input terminal of the third series-parallel combination module is connected to the control voltage V CTL1 , the second control voltage input terminal is connected to the control voltage V CTL2 , the output end is connected to the first end of the fourth microstrip line Z4;

[0013] The second end of the fourth microstrip line Z4 serves as the output end Port2 of the single-pole single-throw switch circuit;

[0014] The first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module are connected under the control voltage V CTL1 and V CTL2 Under the control of, the working state of the single-pole single-throw switch circuit is controlled.

[0015] In one embodiment of the present invention, any one of the first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module includes:

[0016] Active area series-parallel width combination transistor, first bias resistor and second bias resistor; wherein,

[0017] The first end of the transistor of the active area series-parallel width combination is used as the input end of the series-parallel combination module, the second end is used as the output end of the series-parallel combination module, the series part control end is connected to the first end of the first bias resistor, and the parallel part control end is connected to the first end of the second bias resistor;

[0018] The second end of the first bias resistor serves as a first control voltage input end of the series-parallel combination module;

[0019] The second end of the second bias resistor serves as a second control voltage input end of the series-parallel combination module.

[0020] In one embodiment of the present invention, the transistor with active area series-parallel width combination includes:

[0021] Equivalent series transistors and equivalent parallel transistors; where,

[0022] The source of the equivalent series transistor is used as the first end of the transistor of the active area series-parallel width combination, the gate is used as the series part control end of the transistor of the active area series-parallel width combination, and the drain is used as the second end of the transistor of the active area series-parallel width combination;

[0023] The source of the equivalent parallel transistor is connected to the drain of the equivalent series transistor, the gate serves as the parallel part control terminal of the transistor of the active area series-parallel width combination, and the drain is grounded.

[0024] In one embodiment of the present invention, the first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module each include a series part and a parallel part.

[0025] In one embodiment of the present invention, the series connection part includes: the equivalent series transistor and the first bias resistor.

[0026] In one embodiment of the present invention, the parallel connection part includes: the equivalent parallel connection transistor and the second bias resistor.

[0027] In one embodiment of the present invention, the first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module are connected under the control voltage V CTL1 and V CTL2 Under the control of , controlling the working state of the single-pole single-throw switch circuit includes:

[0028] By inputting the first preset voltage as the control voltage V CTL1 , control the equivalent series transistors in all series-parallel combination modules to conduct, and input the second preset voltage as the control voltage V CTL2 , controlling the equivalent parallel transistors in all the series-parallel combination modules to turn off, so that the single-pole single-throw switch circuit is turned on;

[0029] By inputting the second preset voltage as the control voltage V CTL1 , control the equivalent series transistors in all series-parallel combination modules to turn off, and input the first preset voltage as the control voltage VCTL2 , controlling the equivalent parallel transistors in all series-parallel combination modules to turn on, so that the single-pole single-throw switch circuit is turned off.

[0030] In one embodiment of the present invention, the first preset voltage includes: a DC gate voltage of 0V.

[0031] In one embodiment of the present invention, the second preset voltage includes: a DC gate voltage of -28V.

[0032] In a second aspect, the present invention provides an electronic device, comprising the single-pole single-throw switch circuit suitable for wide-band applications as described in the first aspect.

[0033] Beneficial effects of the present invention:

[0034] In the solution provided by the present invention, three series-parallel combination modules are used to form a single-pole single-throw switch circuit, and the working state of the single-pole single-throw switch circuit is controlled by two control voltages. When the single-pole single-throw switch circuit is in the off state, the parallel part in the series-parallel combination module guides the leakage signal into the ground, thereby optimizing the isolation at high frequency and being suitable for application in wide-band scenarios; further, the transistor with a series-parallel width combination in the active area in the series-parallel combination module designed by the present invention is a combination device of an equivalent series transistor and an equivalent parallel transistor, and the device is used to realize the role of a device as a circuit branch, which greatly saves the circuit layout area and reduces the cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic diagram of a single-pole single-throw switch circuit suitable for wideband applications provided by an embodiment of the present invention;

[0036] Figure 2 A schematic diagram of the structure of a single-pole single-throw switch circuit suitable for wide-band applications provided by an embodiment of the present invention;

[0037] Figure 3 A three-dimensional diagram of the device structure of a transistor with a series-parallel width combination of active regions provided by an embodiment of the present invention;

[0038] Figure 4 A simulation result diagram of a single-pole single-throw switch circuit suitable for wide-band applications provided by an embodiment of the present invention;

[0039] Figure 5 A circuit plane layout of a single-pole single-throw switch circuit suitable for wide-band applications in an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0040] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0041] In order to solve the problem of reduced isolation of a radio frequency switch circuit at high frequencies, an embodiment of the present invention provides a single-pole single-throw switch circuit and an electronic device suitable for wide-band applications.

[0042] Below, firstly, a single-pole single-throw switch circuit suitable for wide-band application provided by an embodiment of the present invention is introduced.

[0043] like Figure 1 As shown, a single-pole single-throw switch circuit suitable for wideband applications provided by an embodiment of the present invention may include:

[0044] A first microstrip line Z1, a first series-parallel combination module, a second microstrip line Z2, a second series-parallel combination module, a third microstrip line Z3, a third series-parallel combination module and a fourth microstrip line Z4; wherein,

[0045] A first end of the first microstrip line Z1 is used as an input end Port1 of the single-pole single-throw switch circuit, and a second end is connected to an input end of the first series-parallel combination module;

[0046] The first control voltage input terminal of the first series-parallel combination module is connected to the control voltage V CTL1 , the second control voltage input terminal is connected to the control voltage V CTL2 , the output end is connected to the first end of the second microstrip line Z2;

[0047] The second end of the second microstrip line Z2 is connected to the input end of the second series-parallel combination module;

[0048] The first control voltage input terminal of the second series-parallel combination module is connected to the control voltage V CTL1 , the second control voltage input terminal is connected to the control voltage V CTL2 , the output end is connected to the first end of the third microstrip line Z3;

[0049] A second end of the third microstrip line Z3 is connected to an input end of the third series-parallel combination module;

[0050] The first control voltage input terminal of the third series-parallel combination module is connected to the control voltage V CTL1 , the second control voltage input terminal is connected to the control voltage V CTL2 , the output end is connected to the first end of the fourth microstrip line Z4;

[0051] The second end of the fourth microstrip line Z4 serves as the output end Port2 of the single-pole single-throw switch circuit;

[0052] The first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module are connected under the control voltage VCTL1 and V CTL2 Under the control of, the working state of the single-pole single-throw switch circuit is controlled.

[0053] The embodiment of the present invention adopts three series-parallel combination modules to form a single-pole single-throw switch circuit, and controls the working state of the single-pole single-throw switch circuit through two control voltages. When the single-pole single-throw switch circuit is in the off state, the parallel part in the series-parallel combination module conducts the leakage signal to the ground, thereby optimizing the isolation at high frequency and is suitable for application in wide-band scenarios.

[0054] For each series-parallel combination module proposed in the embodiment of the present invention, any one of the first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module, such as Figure 2 As shown, this may include:

[0055] Active area series-parallel width combination transistor, first bias resistor and second bias resistor; wherein,

[0056] The first end of the transistor of the active area series-parallel width combination is used as the input end of the series-parallel combination module, the second end is used as the output end of the series-parallel combination module, the series part control end is connected to the first end of the first bias resistor, and the parallel part control end is connected to the first end of the second bias resistor;

[0057] The second end of the first bias resistor serves as a first control voltage input end of the series-parallel combination module;

[0058] The second end of the second bias resistor serves as a second control voltage input end of the series-parallel combination module.

[0059] Understandable, such as Figure 2 As shown in FIG. 1 , for the first series-parallel combination module, the transistor of the active region series-parallel width combination is M1, and the first bias resistor is R g1 , the second bias resistor is R g2 For the second series-parallel combination module, the transistor of the active area series-parallel width combination is M2, and the first bias resistor is R g3 , the second bias resistor is R g4 For the third series-parallel combination module, the transistor of the active area series-parallel width combination is M3, and the first bias resistor is R g5 , the second bias resistor is R g6 .

[0060] Each series-parallel combination module includes transistors with the same structure and series-parallel width combination of active regions, such as Figure 2 As shown, it may include:

[0061] Equivalent series transistors and equivalent parallel transistors; where,

[0062] The source of the equivalent series transistor is used as the first end of the transistor of the active area series-parallel width combination, the gate is used as the series part control end of the transistor of the active area series-parallel width combination, and the drain is used as the second end of the transistor of the active area series-parallel width combination;

[0063] The source of the equivalent parallel transistor is connected to the drain of the equivalent series transistor, the gate serves as the parallel part control terminal of the transistor of the active area series-parallel width combination, and the drain is grounded.

[0064] In one embodiment of the present invention, the proposed transistor with active region series-parallel width combination is a gallium nitride high electron mobility field effect transistor (GaN HEMT) with active region series width and parallel width combination, and the device partial structure stereogram is shown in FIG. Figure 3 As shown. It can be understood that for the sake of convenience, Figure 3 Only the SiN passivation layer SiNpassivation of the device and the ohmic metal, gate metal and interconnect metal on the passivation layer are shown. The substrate Substrate Substrate, GaN buffer layer GaN buffer, GaN transmission layer GaN channel and AlGaN isolation layer AlGaN barrier obtained by epitaxial growth under the passivation layer are all conventional structures and are therefore not shown in the figure. Figure 3 As shown in . The embodiment of the present invention adopts the theory of traveling wave transmission, combines switches in series and parallel, adjusts the active area width Wseries of the series part and the active area width Wshunt of the parallel part to optimize the isolation performance of the switch at high frequency, and realizes high integration of series and parallel of a single device through discrete gate control; by combining electromagnetic simulation and epitaxial material design, the Wseries:Wshunt value can be adjusted with high freedom and high adaptability, so as to achieve the optimized design of the switch RF performance under wide bandwidth. It can be understood that the transistor with active area series-parallel width combination proposed in the embodiment of the present invention is realized by combining the active area series width and parallel width, and the method of discrete gate strip control. The embodiment of the present invention uses an equivalent series transistor and an equivalent parallel transistor to form a transistor with an active area series-parallel width combination. The use of the transistor with the active area series-parallel width combination replaces the traditional field effect transistor to make the circuit have better isolation at high frequency, and as Figure 2 As shown in the dotted line portion, the transistor is a gallium nitride radio frequency device having a series transistor and a parallel transistor. Therefore, one device used in the embodiment of the present invention replaces two devices in the traditional circuit, which greatly saves the circuit layout area and reduces the cost.

[0065] The first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module each include a series part and a parallel part.

[0066] Specifically, for each series-parallel combination module, its series part may include: a series transistor and a first bias resistor; and its parallel part may include: a parallel transistor and a second bias resistor.

[0067] The first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module are connected under the control voltage V CTL1 and V CTL2 Under the control of, controlling the working state of the single-pole single-throw switch circuit may include:

[0068] By inputting the first preset voltage as the control voltage V CTL1 , control the series transistors in all series-parallel combination modules to conduct, and input the second preset voltage as the control voltage V CTL2 , controlling the parallel transistors in all the series-parallel combination modules to turn off, so that the single-pole single-throw switch circuit is turned on;

[0069] By inputting the second preset voltage as the control voltage V CTL1 , control the series transistors in all series-parallel combination modules to turn off, and input the first preset voltage as the control voltage V CTL2 , controlling the parallel transistors in all series-parallel combination modules to turn on, so that the single-pole single-throw switch circuit is turned off.

[0070] Specifically, the first preset voltage may include: a DC gate voltage of 0V. The second preset voltage may include: a DC gate voltage of -28V. In order to adapt to other modules in the overall circuit, the first preset voltage may be set to 0V and the second preset voltage may be set to -28V; since generally speaking, the RF PA module in the overall circuit generally sets a drain bias of 28V, the second preset voltage is set to -28V, which is equivalent to setting a reverse signal to better adapt the DC distribution of the two modules.

[0071] It can be understood that when the single-pole single-throw switch circuit needs to be turned on, the first preset voltage is input as the control voltage V CTL1 , after passing through each first bias resistor, each equivalent series transistor is controlled to be turned on; a second preset voltage is input as a control voltage V CTL2 After passing through each second bias resistor, each equivalent parallel transistor is controlled to be turned off, so that the transistors M1, M2 and M3 of the active area series-parallel width combination are all turned on, thereby turning on the single-pole single-throw switch circuit.

[0072] When the single-pole single-throw switch circuit needs to be turned off, the second preset voltage is input as the control voltage V CTL1 , after passing through each first bias resistor, each equivalent series transistor is controlled to be turned off; a first preset voltage is input as a control voltage VCTL2 , after passing through each second bias resistor, each equivalent parallel transistor is controlled to be turned on, so that the transistors M1, M2 and M3 of the series-parallel width combination of the active area are all turned off, thereby turning off the single-pole single-throw switch circuit. When the single-pole single-throw switch circuit is turned off, the signal will not be output from the output terminal Port2 of the single-pole single-throw switch circuit, and most of the signal will be blocked by the series part, and a small amount of leakage signal will be introduced to the ground by the parallel part, thereby improving the isolation in the off state.

[0073] The simulation result diagram of the single-pole single-throw switch circuit suitable for wideband application provided by the embodiment of the present invention is shown in FIG. Figure 4 ,from Figure 4 It can be seen that the blue is the relationship between the frequency freq and the isolation ISO corresponding to the single-pole single-throw switch circuit of the embodiment of the present invention, and the red is the relationship between the frequency freq and the isolation ISO corresponding to the conventional circuit. It can be clearly seen that the single-pole single-throw switch circuit proposed in this application has better isolation than the conventional circuit, especially in a wide frequency band. It can be understood that for isolation, its value is negative and the larger the specific value, the higher the isolation.

[0074] In a second aspect, an embodiment of the present invention provides an electronic device, which may include the single-pole single-throw switch circuit suitable for wideband applications as provided in the first aspect. For a circuit plan layout of a single-pole single-throw switch circuit suitable for wideband applications provided by an embodiment of the present invention in an electronic device, see Figure 5 As shown, from Figure 5 It can be seen that the first microstrip line Z1, the first series-parallel combination module, the second microstrip line Z2, the second series-parallel combination module, the third microstrip line Z3, the third series-parallel combination module and the fourth microstrip line Z4 are sequentially arranged in the circuit of the electronic device, and the specific circuit structure is not repeated here.

[0075] The embodiment of the present invention adopts three series-parallel combination modules to form a single-pole single-throw switch circuit, and controls the working state of the single-pole single-throw switch circuit by two control voltages. When the single-pole single-throw switch circuit is in the off state, the parallel part in the series-parallel combination module introduces the leakage signal into the ground, thereby optimizing the isolation at high frequency and being suitable for application in wide-band scenarios; further, the transistor with a series-parallel width combination in the active area in the series-parallel combination module designed by the present invention is a combination device of an equivalent series transistor and an equivalent parallel transistor. The device is used to realize the role of a device as a circuit branch, greatly saving the circuit layout area and reducing the cost.

[0076] It should be noted that in the description of the present invention, it should be understood that the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0077] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention are included in the protection scope of the present invention.

Claims

1. A single-pole single-throw switch circuit suitable for broadband applications, characterized in that: include: A first microstrip line Z1, a first series-parallel combination module, a second microstrip line Z2, a second series-parallel combination module, a third microstrip line Z3, a third series-parallel combination module and a fourth microstrip line Z4; wherein, The first end of the first microstrip line Z1 serves as the input end Port1 of the single-pole single-throw switch circuit, and the second end is connected to the input end of the first series-parallel combination module; The first control voltage input terminal of the first series-parallel combination module is connected to the control voltage V CTL1 , the second control voltage input terminal is connected to the control voltage V CTL2 , the output end is connected to the first end of the second microstrip line Z2; The second end of the second microstrip line Z2 is connected to the input end of the second series-parallel combination module; The first control voltage input terminal of the second series-parallel combination module is connected to the control voltage V CTL1 , the second control voltage input terminal is connected to the control voltage V CTL2 , the output end is connected to the first end of the third microstrip line Z3; The second end of the third microstrip line Z3 is connected to the input end of the third series-parallel combination module; The first control voltage input terminal of the third series-parallel combination module is connected to the control voltage V CTL1 , the second control voltage input terminal is connected to the control voltage V CTL2 , the output end is connected to the first end of the fourth microstrip line Z4; The second end of the fourth microstrip line Z4 serves as the output end Port2 of the single-pole single-throw switch circuit; The first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module are connected under the control voltage V CTL1 and V CTL2 Under the control of, the working state of the single-pole single-throw switch circuit is controlled.

2. A single-pole single-throw switch circuit suitable for wideband applications according to claim 1, characterized in that: Any one of the first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module comprises: Active area series-parallel width combination transistor, first bias resistor and second bias resistor; wherein, The first end of the transistor of the active area series-parallel width combination is used as the input end of the series-parallel combination module, the second end is used as the output end of the series-parallel combination module, the series part control end is connected to the first end of the first bias resistor, and the parallel part control end is connected to the first end of the second bias resistor; The second end of the first bias resistor serves as a first control voltage input end of the series-parallel combination module; The second end of the second bias resistor serves as a second control voltage input end of the series-parallel combination module.

3. A single-pole single-throw switch circuit suitable for wideband applications according to claim 2, characterized in that: The transistor with active area series-parallel width combination includes: Equivalent series transistors and equivalent parallel transistors; where, The source of the equivalent series transistor is used as the first end of the transistor of the active area series-parallel width combination, the gate is used as the series part control end of the transistor of the active area series-parallel width combination, and the drain is used as the second end of the transistor of the active area series-parallel width combination; The source of the equivalent parallel transistor is connected to the drain of the equivalent series transistor, the gate serves as the parallel part control terminal of the transistor of the active area series-parallel width combination, and the drain is grounded.

4. A single-pole single-throw switch circuit suitable for wideband applications according to claim 3, characterized in that: The first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module each include a series part and a parallel part.

5. A single-pole single-throw switch circuit suitable for wideband applications according to claim 4, characterized in that: The series connection part includes: the equivalent series transistor and the first bias resistor.

6. A single-pole single-throw switch circuit suitable for wideband applications according to claim 4, characterized in that: The parallel connection part includes: the equivalent parallel connection transistor and the second bias resistor.

7. A single-pole single-throw switch circuit suitable for wideband applications according to claim 3, characterized in that: The first series-parallel combination module, the second series-parallel combination module and the third series-parallel combination module are connected under the control voltage V CTL1 and V CTL2 Under the control of , controlling the working state of the single-pole single-throw switch circuit includes: By inputting the first preset voltage as the control voltage V CTL1 , control the equivalent series transistors in all series-parallel combination modules to conduct, and input the second preset voltage as the control voltage V CTL2 , controlling the equivalent parallel transistors in all the series-parallel combination modules to turn off, so that the single-pole single-throw switch circuit is turned on; By inputting the second preset voltage as the control voltage V CTL1 , control the equivalent series transistors in all series-parallel combination modules to turn off, and input the first preset voltage as the control voltage V CTL2 , controlling the equivalent parallel transistors in all series-parallel combination modules to turn on, so that the single-pole single-throw switch circuit is turned off.

8. A single-pole single-throw switch circuit suitable for wideband applications according to claim 7, characterized in that: The first preset voltage includes: a DC gate voltage of 0V.

9. A single-pole single-throw switch circuit suitable for wideband applications according to claim 7, characterized in that: The second preset voltage includes: a DC gate voltage of -28V.

10. An electronic device, characterized in that: The invention comprises a single-pole single-throw switch circuit suitable for wide-band applications as described in any one of claims 1 to 9.

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