Method for prolonging service life of machine table

Abstract

The invention provides a method for prolonging the service life of a machine, and the method comprises the steps: providing a semiconductor structure which is provided with a through hole, and the bottom and side walls of the through hole are provided with a barrier layer which comprises a titanium nitride layer; the semiconductor structure is placed in a machine table tungsten deposition chamber and located below a spraying head of the chamber, the through hole is filled with metal tungsten, and at the moment, a by-product is formed on the spraying head; and hydrogen-containing plasma is introduced into the chamber to remove by-products on the spray header. The problem that the service life of an existing spray head is short due to the fact that organic by-products are prone to being deposited on the surface of the existing spray head is solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a method for increasing the service life of a machine. Background Art

[0002] In the middle process of chip manufacturing, a combination layer of Ti and TiN is generally used as a barrier layer for CVD tungsten through-holes. However, in actual applications, it is found that the life of the showerhead of the tungsten deposition machine is much shorter than the service life of other parts, and when the showerhead is replaced, an erasable white film is found on the showerhead. By scanning the defects of the product, it is found that there are defective particles of components C, O and Ti in the white film. After querying the data and analyzing it, it is known that TiN and WF6 have a self-limiting reaction (W+2NF3→WF6+N2, TiN+WF6→TiFx+WNx), and the by-product TiFx and organic by-products such as C and O in the TiN film layer are volatilized and condensed onto the showerhead (the temperature on the showerhead is 25°C). Summary of the invention

[0003] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method for prolonging the service life of a machine, so as to solve the problem that the surface of the existing shower head is prone to deposition of organic byproducts, resulting in a short service life.

[0004] To achieve the above objectives and other related objectives, the present invention provides a method for increasing the service life of a machine, the method comprising:

[0005] A semiconductor structure is provided, wherein a through hole is formed, and a barrier layer is formed on the bottom and sidewall of the through hole, wherein the barrier layer includes a titanium nitride layer;

[0006] Placing the semiconductor structure in a tungsten deposition chamber of a machine and below a shower head of the chamber, and forming metal tungsten in the through hole, wherein byproducts are formed on the shower head;

[0007] A hydrogen-containing plasma is introduced into the chamber to remove byproducts on the shower head.

[0008] Optionally, when the by-products on the shower head are cleared, the by-products are pumped out of the chamber by a pump.

[0009] Optionally, the barrier layer further includes a titanium layer, and in this case, the titanium nitride layer is formed on the surface of the titanium layer.

[0010] Optionally, the semiconductor structure is placed on a base, and the base is located below the shower head, wherein a heating device is provided in the base.

[0011] Optionally, when forming the through hole, the temperature of the base is maintained at 300°C.

[0012] Optionally, the temperature of the shower head is less than 300°C.

[0013] Optionally, the temperature of the shower head is 25°C.

[0014] Optionally, the hydrogen-containing gas required to form the hydrogen-containing plasma includes hydrogen and / or hydrogen chloride.

[0015] Optionally, when the by-products are purged, the pressure of the chamber is 3 torr to 60 torr.

[0016] As described above, the method for increasing the service life of the machine of the present invention removes organic byproducts such as C and O deposited on the shower head by adding hydrogen-containing plasma into the tungsten deposition machine, and a better removal effect can be achieved by increasing the temperature of the shower head. The service life of the shower head can be increased by the above method, thereby increasing the service life of the entire machine, and reducing defects in the product sheets; moreover, the cleaning of metal tungsten and the cleaning of C / O can be integrated into the same recipe, which can increase the uptime of the machine. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a flow chart of the method for increasing the service life of a machine according to the present invention. DETAILED DESCRIPTION

[0018] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0019] See also Figure 1 It should be noted that the illustrations provided in this embodiment are only schematic illustrations of the basic concept of the present invention. Although the illustrations only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation, the form, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated.

[0020] like Figure 1 As shown, this embodiment provides a method for increasing the service life of a machine, the method comprising:

[0021] A semiconductor structure is provided, wherein a through hole is formed, and a barrier layer is formed on the bottom and sidewall of the through hole, wherein the barrier layer includes a titanium nitride layer;

[0022] The semiconductor structure is placed in a tungsten deposition chamber of a machine and below a shower head of the chamber, and metal tungsten is filled in the through hole, and byproducts are formed on the shower head;

[0023] A hydrogen-containing plasma is introduced into the chamber to remove byproducts on the shower head.

[0024] In this embodiment, since W+2NF3→WF6+N2, C / O+H2→H2O+CO2 / CO, CO2 and CO can be generated by using hydrogen-containing plasma to react with C and O, thereby avoiding the deposition of C and O organic byproducts on the surface of the shower head.

[0025] Specifically, when the by-products on the shower head are removed, the by-products are pumped out of the chamber by a pump.

[0026] Specifically, the hydrogen-containing gas required to form the hydrogen-containing plasma includes hydrogen and / or hydrogen chloride.

[0027] Specifically, when the by-products are removed, the pressure of the chamber is 3 torr to 60 torr.

[0028] Specifically, the barrier layer further includes a titanium layer, and in this case, the titanium nitride layer is formed on the surface of the titanium layer.

[0029] Specifically, the semiconductor structure is placed on a base, and the base is located below the shower head, wherein a heating device is provided in the base.

[0030] Specifically, when forming the through hole, the temperature of the base is maintained at 300°C.

[0031] Specifically, the temperature of the shower head is less than 300°C.

[0032] More specifically, the temperature of the shower head is 25°C.

[0033] In summary, the method for increasing the service life of the machine of the present invention removes organic byproducts such as C and O deposited on the shower head by adding hydrogen-containing plasma into the tungsten deposition machine, and a better removal effect can be achieved by increasing the temperature of the shower head. The above method can increase the service life of the shower head, thereby increasing the service life of the entire machine, and can also reduce defects in the operating product sheets; moreover, the cleaning of metal tungsten and the cleaning of C / O can be integrated into the same recipe, which can increase the uptime of the machine. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0034] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A method for increasing the service life of a machine, characterized in that: The method comprises: A semiconductor structure is provided, wherein a through hole is formed, and a barrier layer is formed on the bottom and sidewall of the through hole, wherein the barrier layer includes a titanium nitride layer; The semiconductor structure is placed in a tungsten deposition chamber of a machine and below a shower head of the chamber, and metal tungsten is filled in the through hole, and byproducts are formed on the shower head; A hydrogen-containing plasma is introduced into the chamber to remove byproducts on the shower head.

2. The method for increasing the service life of a machine according to claim 1, characterized in that: When the by-products on the shower head are cleaned, the by-products are pumped out of the chamber by a pump.

3. The method for increasing the service life of a machine according to claim 1, characterized in that: The barrier layer further includes a titanium layer, and in this case, the titanium nitride layer is formed on the surface of the titanium layer.

4. The method for increasing the service life of a machine according to claim 1, characterized in that: The semiconductor structure is placed on a base, and the base is located below the shower head, wherein a heating device is provided in the base.

5. The method for increasing the service life of a machine according to claim 4, characterized in that: While forming the through hole, the temperature of the susceptor was maintained at 300°C.

6. The method for increasing the service life of a machine according to claim 1, characterized in that: The temperature of the shower head is less than 300°C.

7. The method for increasing the service life of a machine according to claim 6, characterized in that: The temperature of the shower head is 25°C.

8. The method for increasing the service life of a machine according to claim 1, characterized in that: The hydrogen-containing gas required to form the hydrogen-containing plasma includes hydrogen and / or hydrogen chloride.

9. The method for increasing the service life of a machine according to claim 1, characterized in that: When the by-products are removed, the pressure of the chamber is between 3 torr and 60 torr.

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