Semiconductor material bonding apparatus and method

Abstract

The present invention provides an apparatus and a method for bonding a semiconductor material, the apparatus may include: a stage device for supporting an object such that the semiconductor material is bonded to the object through a bonding head; and a bottom plate which is formed on the platform device and in which a vacuum flow path for transmitting vacuum pressure is formed. The vacuum flow path includes: a first vacuum flow path groove portion formed in a structure that transmits the vacuum pressure to the first main plate; and a second vacuum flow path groove part which is configured to transmit the vacuum pressure to the second main plate.

Description

Technical Field

[0001] The present invention relates to a semiconductor material bonding device and method, and more particularly to a semiconductor material bonding device and method that reduces the number of components and simplifies the device by matching a base plate and widely using it in various forms of frames produced by different manufacturers. Background Art

[0002] A semiconductor material bonding device such as a die bonding device that bonds a semiconductor chip to a substrate strip or another chip or another die is a device that bonds semiconductor materials of various shapes, sizes or specifications to various objects of various shapes, sizes or specifications.

[0003] Therefore, in order to process semiconductor materials such as semiconductor chips and various frames in square ring, circular, disk and other shapes prepared by various manufacturers, the existing semiconductor material bonding device needs to match various base plates of various specifications. Summary of the invention

[0004] Problem to be solved

[0005] However, this conventional semiconductor material bonding device has the following problems:

[0006] When the semiconductor material or object is different, for example, it is necessary to separate the existing base plate from the platform device and then fix the new base plate again, which is more complicated. In addition, the existing main board needs to be installed again as a new main board, which consumes more time and money and significantly reduces productivity.

[0007] The present invention is used to solve multiple problems including the above problems, and its purpose is to provide a semiconductor material bonding device and method that can reduce the number of parts and simplify the device by matching the base plate and widely using various forms of frames produced by different manufacturers. However, such problems are only illustrative, and the scope of the present invention is not limited by these problems.

[0008] Means of solving the problem

[0009] A semiconductor material joining device based on the concept of the present invention and used to solve the above-mentioned problems may include: a platform device for supporting an object so that the semiconductor material is bonded to the object through a bonding joint; and a base plate formed on the platform device, forming a vacuum flow path for transmitting vacuum pressure; the vacuum flow path includes: a first vacuum flow path groove portion, formed to transmit the vacuum pressure to a first main board structure capable of vacuum adsorbing a first frame; and a second vacuum flow path groove portion, formed to transmit the vacuum pressure to a second main board structure, and the second main board is capable of vacuum adsorbing a second frame having a shape different from the first frame.

[0010] In addition, according to the present invention, the first frame as a whole may be in the shape of a square ring; and the second frame as a whole may be in the shape of a circular ring.

[0011] In addition, according to the present invention, the multiple first adsorption holes of the first main board can be configured into a square ring shape to vacuum adsorb the first frame; the multiple second adsorption holes of the second main board can be configured into a circular ring shape to vacuum adsorb the second frame.

[0012] In addition, according to the present invention, the bottom plate may include: a plate-shaped base; the vacuum flow path, formed on the first surface of the base, connected to the first adsorption hole portion when the first frame is installed, and connected to the second adsorption hole portion when the second frame is installed, thereby forming a dual-use structure; a vacuum pipeline, formed on the second surface of the base; and a connecting hole portion, which passes through the base from the vacuum pipeline and is connected to the vacuum pipeline.

[0013] Furthermore, according to the present invention, the vacuum flow path may be a groove portion whose upper portion is open or a strip-shaped groove portion whose upper portion is open and extends long.

[0014] In addition, according to the present invention, the second vacuum flow path groove portion can be a circular corresponding groove portion formed in a circular arc shape or configured in a circular arc shape to correspond to the second frame; the first vacuum flow path groove portion is a square corresponding groove portion extending from the circular corresponding groove portion and formed in a square shape or configured in a square shape to correspond to the first frame.

[0015] In addition, according to the present invention, the vacuum flow path may include an arc-straight line connection type vacuum flow path, which starts from the circular corresponding groove portion in a partial arc shape and is connected to the straight square corresponding groove portion after passing through an extended groove portion extending to one side.

[0016] Furthermore, according to the present invention, the vacuum flow path may include a V-shaped vacuum flow path starting from the circular corresponding groove portion configured in a circular shape and connected to the square corresponding groove portion configured in a square shape through an extension groove portion extending in two directions.

[0017] Furthermore, according to the present invention, a tray-type placement table is placed on the base body.

[0018] In addition, according to the present invention, a clamping device may be further included, wherein the clamping device clamps the first main board or the second main board.

[0019] In addition, according to the present invention, it can also include: a vacuum pressure measuring device, formed on the bottom plate, measuring the vacuum pressure of the vacuum flow path to identify the vacuum adsorption state of the first frame or the second frame; and a control unit, receiving a vacuum pressure signal from the vacuum pressure measuring device and identifying the vacuum adsorption state, and applying a separate control signal to the vacuum pipeline to independently control the vacuum flow path where vacuum adsorption fails.

[0020] In addition, according to the present invention, it can also include: a weight sensor formed on the base plate or the platform device, which measures the bonding pressure of the bonding joint when bonding semiconductor materials; and a control unit, which receives the measured pressure signal from the weight sensor and determines the bonding pressure state of the bonding joint.

[0021] In addition, according to the present invention, a lifting device may be further included, formed on the base plate or the platform device, so that the base plate or the platform device can be lifted and lowered to adjust the height of the base plate or the platform device; when the bonding pressurization pressure of the bonding head exceeds the standard range, the control unit applies a height control signal to the lifting device.

[0022] In addition, according to the present invention, when the first frame or the second frame is loaded, the weight sensor can measure the weight of the loaded first frame or the second frame; the control unit receives the weight signal from the weight sensor and applies a bonding pressure control signal to each frame of the lifting device.

[0023] In addition, according to the present invention, it can also include: a camera for photographing the first frame or the second frame placed on the base plate; and a control unit for receiving the photographed image information from the camera and applying a pressure control signal for the bonding of each frame to a lifting device that lifts and lowers the base plate or the platform device.

[0024] In addition, according to the present invention, a heater device may be further included. The heater device is formed on the bottom plate and heats the first main board or the second main board to increase the adhesion of the semiconductor material or remove moisture.

[0025] In addition, according to the present invention, it can also include: a blowing device formed on the base plate to remove surrounding foreign matter when bonding semiconductor materials; and a pressure distribution measuring device formed on the base plate to measure the pressure distribution of the first frame or the second frame.

[0026] Furthermore, according to the present invention, a guide member may be further included, the guide member being formed at the bottom plate and guiding one side of the second frame.

[0027] In addition, a semiconductor material joining method based on the concept of the present invention and used to solve the above-mentioned problems may include: step (a), placing a first frame or a second frame on a first main board or a second main board arranged on a base plate, and performing vacuum adsorption; step (b), sensing characteristics such as weight or shape of the first frame or the second frame; and step (c), adjusting the height of the base plate or a platform device formed with the base plate according to a control signal of the bonding pressure of each frame matching the sensed characteristic signal.

[0028] In addition, a semiconductor material bonding device based on the concept of the present invention and used to solve the above-mentioned problems may include: a platform device for supporting an object so that the semiconductor material is bonded to the object through a bonding head; and a base plate formed on the platform device, formed with a vacuum flow path for transmitting vacuum pressure; the vacuum flow path includes: a first vacuum flow path groove portion, formed to transmit the vacuum pressure to a first main board capable of vacuum adsorbing a first frame; and a second vacuum flow path groove portion, formed to transmit the vacuum pressure to a second main board, the second main board being capable of vacuum adsorbing a second frame having a shape different from the first frame; the first frame is in the shape of a square ring as a whole; the second frame is in the shape of a circular ring as a whole; multiple The first adsorption hole portion is configured in the shape of a square ring to vacuum adsorb the first frame; the multiple second adsorption holes of the second main board are configured in the shape of a circular ring to vacuum adsorb the second frame; the bottom plate includes: a plate-shaped base; the vacuum flow path is formed on the first surface of the base, connected to the first adsorption hole portion when the first frame is installed, and connected to the second adsorption hole portion when the second frame is installed, thereby forming a dual-purpose structure; a vacuum pipeline is formed on the second surface of the base; and a connecting hole portion passes through the base from the vacuum pipeline and is connected to the vacuum pipeline; the vacuum flow path is a groove portion with an open upper portion or a strip groove portion with an open upper portion and extending longer; the second vacuum flow path The groove portion is a circular corresponding groove portion formed in a circular arc shape or configured in a circular arc shape to correspond to the second frame; the first vacuum flow path groove portion is a square corresponding groove portion extending from the circular corresponding groove portion and formed in a square shape or configured in a square shape to correspond to the first frame; the vacuum flow path includes a circular arc straight line connection type vacuum flow path, the circular arc straight line connection type vacuum flow path starts from the circular corresponding groove portion of a partial circular arc shape and is connected to the straight square corresponding groove portion after passing through an extended groove portion extending in one direction; the vacuum flow path includes a V-shaped vacuum flow path, the V-shaped vacuum flow path starts from the circular corresponding groove portion configured in a circular shape and is connected to the square corresponding groove portion configured in a square shape through extended groove portions extending in two directions. The groove portion may also include: a clamping device for clamping the first main board or the second main board; a vacuum pressure measuring device formed on the bottom plate, measuring the vacuum pressure of the vacuum flow path to distinguish the vacuum adsorption state of the first frame or the second frame; and a control unit, receiving a vacuum pressure signal from the vacuum pressure measuring device and distinguishing the vacuum adsorption state, and applying a separate control signal to the vacuum pipeline to independently control the vacuum flow path that fails in vacuum adsorption; may also include: a weight sensor formed on the bottom plate or the platform device, when bonding semiconductor materials, measuring the bonding pressurization pressure of the bonding head; and a control unit, receiving the measured pressurization pressure signal from the weight sensor and judging the bonding pressurization pressure state of the bonding head;It may also include a lifting device formed on the bottom plate or the platform device, so that the bottom plate or the platform device is lifted and lowered to adjust the height of the bottom plate or the platform device; when the bonding pressure of the bonding head exceeds the standard range, the control unit applies a height control signal to the lifting device. ;

[0029] Effects of the Invention

[0030] According to the embodiments of the present invention constructed as described above, the following effects are achieved:

[0031] By making the base plate widely and interchangeably match and use in various forms of frames produced by different manufacturers, the number of parts is reduced and the device is simplified. Even when facing different semiconductor materials or objects, there is no need to replace the base plate. The main board can be simply reinstalled to be applied to various frames or placement tables, which can greatly save time, cost and manpower for component replacement and improve productivity. In addition, the vacuum pressure can be measured to minimize the loss when the adsorption fails, and a clamping device can be used to achieve a more solid vacuum adsorption. When joining semiconductor materials, the height of the platform device can be adjusted by a weight sensor to precisely adjust the joining force. When loading the frame, the type of the frame can be identified by a weight sensor or a camera that measures the weight of the frame, so as to reset the joining pressure, and the bottom plate with a built-in heater can be used to remove moisture and improve the adhesive force, and the foreign matter can be removed by the blowing function, and the bonding pressure of each manufacturer can be provided by a pressure distribution measuring device. Of course, the scope of the present invention is not limited by these effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a perspective view showing a state where a first main board and a first frame are placed on a bottom plate of a semiconductor material bonding device according to some embodiments of the present invention;

[0033] Figure 2 It is shown installed in Figure 1 A top view of the bottom plate and the first main plate of the semiconductor material bonding device;

[0034] Figure 3 It is depicted Figure 1 An exploded perspective view of a bottom plate, a first main plate and a first frame of a bonding device for semiconductor materials;

[0035] Figure 4 It is depicted Figure 3 A perspective view of a bottom plate of a bonding device for semiconductor material;

[0036] Figure 5 Yes Figure 4 A partially enlarged perspective view showing a part of a bottom plate of a bonding device for semiconductor materials;

[0037] Figure 6 Yes Figure 4 A partially enlarged perspective view showing another part of the bottom plate of the bonding device for semiconductor material in FIG.

[0038] Figure 7 It is depicted Figure 3 A three-dimensional view of a first main board of a bonding device for semiconductor material;

[0039] Figure 8 It is depicted Figure 3 A perspective view of a first frame of a bonding device for semiconductor material;

[0040] Fig. 9 It is shown in Figure 1 A three-dimensional diagram of a state in which a second main board and a second frame are arranged on a bottom plate of a bonding device for semiconductor materials;

[0041] Fig.10 It is depicted Figure 1 A partially exploded perspective view of a bottom plate, a second main plate and a second frame of a bonding device for semiconductor materials;

[0042] Fig.11 It is depicted Fig.10 A three-dimensional view of a second main board of the semiconductor material bonding device;

[0043] Fig.12 It is depicted Fig.10 A perspective view of a second frame of a bonding device for semiconductor material;

[0044] Fig.13 Draw the current Figure 1 A three-dimensional diagram of a state in which a placement table is placed on a bottom plate of a bonding device for semiconductor materials;

[0045] Fig.14 is a sequence diagram illustrating a method for bonding semiconductor materials according to some embodiments of the present invention;

[0046] Description of reference numerals:

[0047] 1 Semiconductor material; 2 Bonding joint;

[0048] F1 first frame; F2 second frame;

[0049] F3 mounting table; 10 platform device;

[0050] 20 bottom board; P1 first main board;

[0051] P2 second main board; H1 first adsorption hole portion;

[0052] H2 second adsorption hole; P1a, P2a clamping groove;

[0053] 21 substrate; 22 vacuum flow path;

[0054] 22a Arc straight line connection type vacuum flow path; 22b V-shaped vacuum flow path;

[0055] V1 first vacuum flow path groove; V11 square corresponding groove;

[0056] V2: second vacuum flow path groove; V21: circular corresponding groove;

[0057] V31, V32 extension slot; 23 vacuum pipeline;

[0058] 24 connecting hole; 30 clamping device;

[0059] 40 vacuum pressure measuring device; 50 control unit;

[0060] 60 weight sensor; 70 lifting device;

[0061] 80 camera; 91 heater device;

[0062] 92 air blowing device; 93 pressure distribution measuring device;

[0063] 94 guiding member; 100 joining device of semiconductor material. DETAILED DESCRIPTION

[0064] Hereinafter, some preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0065] The embodiments of the present invention are intended to more completely describe the present invention to those skilled in the art. The following embodiments may be changed into several different forms, and the scope of the present invention is not limited to the following embodiments. On the contrary, these embodiments are intended to make the present disclosure more thorough and complete, and fully convey the spirit of the present invention to those skilled in the art. In addition, for the convenience and clarity of explanation, the thickness or size of each layer in the drawings is exaggerated.

[0066] The terms used in this specification are used to describe specific embodiments and are not intended to limit the present invention. As used in this specification, singular forms may include plural forms unless otherwise clearly indicated in the context. In addition, "comprising" used in this specification specifically specifies the existence of the shapes, numbers, steps, operations, components, elements and / or combinations thereof involved, and does not exclude the existence or addition of more than one other shapes, numbers, operations, components, elements and / or combinations.

[0067] Embodiments of the present invention are described below with reference to the accompanying drawings that schematically illustrate preferred embodiments of the present invention. In the accompanying drawings, variations of the shapes depicted may be expected, for example, based on manufacturing techniques and / or tolerances. Therefore, embodiments of the present invention should not be construed as being limited to the specific shapes depicted in this specification, but should include, for example, shape variations resulting from manufacturing.

[0068] Figure 1 is a perspective view showing a state where a first main board P1 and a first frame F1 are placed on a bottom plate 20 of a semiconductor material bonding device 100 according to some embodiments of the present invention; Figure 2 It is shown installed in Figure 1 A top view of the bottom plate 20 and the first main plate P1 of the semiconductor material bonding device 100; Figure 3 It is depicted Figure 1 An exploded perspective view of the bottom plate 20, the first main plate P1 and the first frame F1 of the semiconductor material bonding device 100; Figure 4 It is depicted Figure 3 3D view of the base plate 20 of the bonding apparatus 100 for bonding semiconductor materials.

[0069] First, if Figures 1 to 4 As shown, a semiconductor material bonding device 100 according to some embodiments of the present invention may generally include a platform device 10 and a base plate 20 .

[0070] The platform device 10 may be, for example, a table-shaped device that supports an object in order to bond the semiconductor material 1 to the object via the bonding joint 2 .

[0071] The platform device 10 may be, for example, a structure having sufficient strength and durability so as to support not only the base plate 20 but also the first main plate P1 and the first frame F1 mounted on the base plate 20 .

[0072] The platform device 10 can be used in a semiconductor material bonding device such as a grain bonding device, which bonds a semiconductor chip (grain) to a substrate strip or another chip or another grain. A lifting device 70 for lifting and lowering the base plate 20 can be provided in the platform device 10 to adjust the height of the base plate 20 to adjust the bonding pressure of the bonding head 2.

[0073] In addition to this, the platform device 10 may have various functions such as a turntable function of rotating the turntable to the left or right, or an advance and retreat function of moving from one side to the other side.

[0074] For example, Figures 1 to 4 As shown, the bottom plate 20 is formed on the platform device 10, and may be formed with a vacuum line 23 (see Figure 5) is transmitted to the vacuum flow path 22 of the first main board P1.

[0075] For example, Figure 4 As shown, the vacuum flow path 22 may include: a first vacuum flow path groove portion V1, formed to transfer vacuum pressure to a first main board P1 capable of vacuum adsorbing the first frame F1; and a second vacuum flow path groove portion V2, formed to transfer vacuum pressure to a second main board P2, and the second main board P2 is capable of vacuum adsorbing a second frame F2 having a shape different from the first frame F1.

[0076] The vacuum flow path 22 may be, for example, a groove portion whose upper portion is open or a strip-shaped groove portion whose upper portion is open and extends long.

[0077] For example, Figure 4 As shown, the second vacuum flow path groove portion V2 can be a circular corresponding groove portion V21 formed in an arc shape or configured in an arc shape to correspond to the second frame F2; the first vacuum flow path groove portion V1 can be a square corresponding groove portion V11 extending from the circular corresponding groove portion V21 and formed in a square shape or configured in a square shape to correspond to the first frame F1.

[0078] More specifically, for example Figure 4 As shown, the vacuum flow path 22 may include: an arc-straight-line connection type vacuum flow path 22a, which starts from a circular corresponding groove portion V21 in a partial arc shape and is connected to a straight square corresponding groove portion V11 through an extended groove portion V31 extending in one direction; and a V-shaped vacuum flow path 22b, which starts from a circular corresponding groove portion V21 configured in a circular shape and is connected to a square corresponding groove portion V11 configured in a square shape through an extended groove portion V32 extending in two directions.

[0079] Therefore, the bottom plate 20 of the present invention can not only place the first main plate P1 (refer to Figure 7 ), and a second motherboard P2 can also be installed (refer to Fig.11 ).

[0080] Figure 5 Yes Figure 4 A partially enlarged perspective view showing a portion of the bottom plate 20 of the bonding device 100 for semiconductor materials; Figure 6 Yes Figure 4 FIG. 2 is a partially enlarged perspective view showing another portion of the base plate 20 of the bonding device 100 for bonding semiconductor materials.

[0081] For example, Figure 5As shown, the bottom plate 20 may include: a plate-shaped base 21; a vacuum flow path 22 formed on the first surface of the base 21, connected to the first adsorption hole portion H1 when the first frame F1 is installed, and the second frame F2 is installed (refer to Fig.12 ) is connected to the second adsorption hole H2 (refer to Fig.11 ), thereby forming a dual-purpose structure; a vacuum line 23 formed on the second surface of the substrate 21; and a connecting hole portion 24, which passes through the substrate 21 from the vacuum line 23 and is connected to the vacuum line 23.

[0082] Therefore, the vacuum pressure of the vacuum pipeline 23 connected to the vacuum pump or the vacuum pressure cut-off valve is transmitted to the vacuum flow path 22 through the connecting hole portion 24, and the vacuum pressure is transmitted to the first frame F1 or the second frame F2 through the vacuum flow path 22, so that the first frame F1 or the second frame F2 is firmly vacuum-adsorbed to the platform device 10.

[0083] In addition, if Figure 1 and Figure 6 As shown, the semiconductor material bonding device 100 according to some embodiments of the present invention may also include, for example: a vacuum pressure measuring device 40, formed on the base plate 20, measuring the vacuum pressure of the vacuum flow path 22 to identify the vacuum adsorption state of the first frame F1 or the second frame F2; and a control unit 50, receiving the vacuum pressure signal from the vacuum pressure measuring device 40 and identifying the vacuum adsorption state, and applying a separate control signal to the vacuum pipeline 23 to independently control the vacuum flow path 22 where the vacuum adsorption fails.

[0084] Therefore, the control unit 50 receives the vacuum pressure signal from the vacuum pressure measuring device 40 and identifies the vacuum adsorption state. If it is identified as a vacuum adsorption failure, in order to avoid problems with the overall vacuum pressure forming function, a vacuum pressure closing control signal is applied to the vacuum pipeline 23 equipped with a vacuum pump or a vacuum valve, etc., thereby individually controlling the vacuum flow path 22.

[0085] Figure 7 It is depicted Figure 3 A three-dimensional view of a first main board P1 of a semiconductor material bonding device 100; Figure 8 It is depicted Figure 3 3D diagram of a first frame F1 of a semiconductor material bonding apparatus 100.

[0086] For example, Figure 7 As shown, the first main board P1 can be a square plate in shape as a whole to serve as a support platform, and a plurality of first adsorption holes H1 (or vacuum pressure forming nozzles) are arranged in a square ring form to vacuum adsorb the first frame F1, and a clamping groove P1a can be formed on one side.

[0087] For example, Figure 8As shown, the first frame F1 may be formed with a through hole F1a inside and may be in the shape of a square ring as a whole.

[0088] Although not shown in the drawings, a carrier tape may be attached to the first frame F1 to transport various objects such as substrates and dies.

[0089] Therefore, by using the base plate 20 of the present invention, the first main plate P1 and the first frame F1 can be vacuum-adsorbed on the base plate 20 disposed on the platform device 10, thereby firmly fixing the position of the object.

[0090] in addition, Fig. 9 It is shown in Figure 1 A three-dimensional diagram of a state in which a second main board P2 and a second frame F2 are placed on a bottom plate 20 of a semiconductor material bonding device 100; Fig.10 It is depicted Figure 1 A partially exploded perspective view of the bottom plate 20, the second main plate P2 and the second frame F2 of the semiconductor material bonding device 100;

[0091] Fig.11 It is depicted Fig.10 A perspective view of a second main board P2 of the semiconductor material bonding device 100; Fig.12 It is depicted Fig.10 3D diagram of a second frame F2 of the semiconductor material bonding apparatus 100.

[0092] like Figures 9 to 12 As shown, in Figure 1 The second main board P2 and the second frame F2 may be placed on the bottom plate 20 of the semiconductor material bonding apparatus 100 .

[0093] For example, Fig.11 As shown, the second main board P2 can be a square plate in shape as a whole to serve as a support platform, or a plurality of second adsorption hole portions H2 (or vacuum pressure forming nozzles) can be arranged in a circular ring form to vacuum adsorb the second frame F2, and a clamping groove P2a can be formed on one side.

[0094] For example, Fig.12 As shown, the second frame F2 may be formed with a through hole F2a inside and may be in the shape of a circular ring as a whole.

[0095] Here, although not shown in the figure, a carrier tape or the like may be affixed to the second frame F2 to transport various objects such as substrates or crystal chips. The second frame F2 may be a product of a different manufacturer from the first frame F1, or may transport objects different from those transported by the first frame F1.

[0096] Therefore, by using the bottom plate 20 of the present invention, the second main plate P2 and the second frame F2 can be vacuum-adsorbed on the bottom plate 20 disposed on the platform device 10, thereby firmly fixing the position of the object.

[0097] Fig.13 Draw the current Figure 1 A perspective view showing a state in which a mounting table F3 is mounted on a base plate 20 of a semiconductor material bonding apparatus 100.

[0098] like Fig.13 As shown, the base 21 of the bottom plate 20 of the semiconductor material bonding device 100 according to some embodiments of the present invention can not only accommodate the first frame F1 and the second frame F2, but also accommodate a tray-type placement table F3 with a self-clamping function.

[0099] Such a self-clamping function can utilize other fixing parts such as screws, bolts, pins, ropes, hook and loop straps, or engaging protrusions and grooves, or can utilize other fixing devices such as other clips or other clamping parts, or can utilize other magnets or magnetic bodies, etc., and a very variety of forms of self-clamping devices can be applicable.

[0100] Therefore, as described above, by using the base plate 20 of the present invention, for example, three types of frames and mounting tables manufactured by three manufacturers, such as the first frame F1 of the first manufacturer, the second frame F2 of the second manufacturer, and the mounting table F3 of the third manufacturer, can be used simultaneously.

[0101] like Figures 1 to 13 As shown, the semiconductor material bonding device 100 according to some embodiments of the present invention may further include a clamping device 30 for clamping the first main board P1 or the second main board P2 using a cylinder or a motor.

[0102] Therefore, in addition to the vacuum adsorption method, the platform device 10 can also use the clamping device 30 for clamping the first main board P1 or the second main board P2 to prevent the warping phenomenon between components, so that the first main board P1 or the second main board P2 can be fixed more firmly.

[0103] In addition, according to some embodiments of the present invention, the semiconductor material bonding device 100 may also include, for example: a weight sensor 60, formed on the base plate 20 or the platform device 10, which measures the bonding pressurization pressure of the bonding joint 2 when bonding the semiconductor material 1; a control unit 50, which receives the measured pressurization pressure signal from the weight sensor 60 and determines the bonding pressurization pressure state of the bonding joint 2; and a lifting device 70, formed on the base plate 20 or the platform device 10, which lifts and lowers the base plate 20 or the platform device 10 to adjust the height of the base plate 20 or the platform device 10.

[0104] Therefore, when the bonding pressure of the bonding head 2 exceeds the standard range, the control unit 50 may apply a height control signal to the lifting device 70 .

[0105] Therefore, for example, when bonding the semiconductor material 1, the weight sensor 60 measures the bonding pressurization pressure of the bonding joint 2 and applies the measured pressurization pressure signal to the control unit 50. The control unit 50 can determine the bonding pressurization pressure state of the bonding joint 2 and provide feedback. For example, when the bonding pressurization pressure of the bonding joint 2 is lower than the standard range, an ascending control signal is applied to the lifting device 70 to increase the height of the platform device 10, thereby relatively increasing the bonding pressurization pressure of the bonding joint 2. On the contrary, when the bonding pressurization pressure of the bonding joint 2 is higher than the standard range, a descending control signal is applied to the lifting device 70 to lower the height of the platform device 10, thereby relatively reducing the bonding pressurization pressure of the bonding joint 2.

[0106] In addition, when the first frame F1 or the second frame F2 is loaded, the weight sensor 60 may measure the weight of the loaded first frame F1 or the second frame F2.

[0107] Therefore, the control unit 50 receives the frame weight signal from the weight sensor 60 and applies the bonding pressure control signal of each frame to the lifting device 70. For example, when the first frame F1 is automatically loaded, the control unit 50 senses it and adjusts the height of the platform device 10 again through the lifting device 70, and applies the bonding pressure suitable for the first frame F1. When the second frame F2 is loaded, the control unit 50 senses it and adjusts the height of the platform device 10 again through the lifting device 70, and applies the bonding pressure suitable for the second frame F2. The placement table F3 described above also senses this when the placement table F3 is automatically loaded, and the height of the platform device 10 is adjusted again through the lifting device 70, so that the bonding pressure suitable for the placement table F3 can be applied.

[0108] In addition, if Figures 1 to 13 As shown, the semiconductor material bonding device 100 according to some embodiments of the present invention may further include a camera 80 , for example, and the camera 80 photographs the first frame F1 or the second frame F2 disposed on the base plate 20 .

[0109] Therefore, for example, after the control unit 50 receives image information of a specific part such as a square edge or a circular edge from the camera 80 and performs shape recognition and shape identification, it applies a pressure control signal for each frame bonding pressurization to the lifting device 70 that lifts and lowers the base plate 20 or the platform device 10.

[0110] That is, the control unit 50 receives image information from the camera 80 and applies the adhesive pressure control signal of each frame to the lifting device 70. For example, when the first frame F1 is automatically loaded, the control unit 70 senses this and adjusts the height of the platform device 10 again through the lifting device 70, thereby applying the adhesive pressure suitable for the first frame F1. When the second frame F2 is loaded, the control unit 70 senses this and adjusts the height of the platform device 10 again through the lifting device 70, thereby applying the adhesive pressure suitable for the second frame F2. The placement table F3 described above also senses this when the placement table F3 is automatically loaded, and the height of the platform device 10 is adjusted again through the lifting device 70, so that the adhesive pressure suitable for the placement table F3 can be applied.

[0111] In addition, if Figures 1 to 13 As shown, the semiconductor material joining device 100 according to some embodiments of the present invention may also include a heater device 91 such as a heating wire, an electrode rod, a cotton heating element, a box heater, etc. The heater device 91 is formed on the base plate 20 and heats the first main board P1 or the second main board P2 to increase the adhesion of the semiconductor material 1 or remove moisture.

[0112] Therefore, the base plate 20 can heat the first main board P1 or the second main board P2 by using the heater device 91, so as to improve the adhesion of the semiconductor material 1 or remove moisture.

[0113] In addition, if Figures 1 to 13 As shown, the semiconductor material bonding device 100 according to some embodiments of the present invention may further include, for example, an air blowing device 92, which is formed on the base plate 20 to remove surrounding foreign matter when bonding the semiconductor material 1. However, such an air blowing device 92 is not limited to the device shown in the drawings, and a variety of air blowing devices can be used in a wide variety of positions.

[0114] Therefore, when bonding the semiconductor material 1, the air blowing device 92 can be used to remove surrounding foreign matter, thereby preventing foreign matter contamination in advance.

[0115] In addition, if Figures 1 to 13 As shown, the semiconductor material bonding device 100 according to some embodiments of the present invention may also include various pressure distribution measuring devices 93 such as a level sensor formed on the base plate 20 and measuring the pressure distribution of the first frame F1 or the second frame F2, infrared or other non-destructive detection devices.

[0116] Therefore, the pressure distribution of the first frame F1 or the second frame F2 can be measured by the pressure distribution measuring device 93, thereby monitoring the pressure distribution state.

[0117] In addition, if Figures 1 to 13As shown, the semiconductor material bonding device 100 according to some embodiments of the present invention may further include a guide member 94, which is formed on the bottom plate 20 and guides a side surface P2b (refer to Fig.11 ) and one side of the placement table F3.

[0118] Therefore, the guide member 94 can be used to guide the side surface P2b (see Fig.11 ) and one side of the placement table F3 and align it to the accurate position.

[0119] Therefore, according to the present invention, by making the base plate 20 widely and interchangeably matched for use in various forms of frames produced by different manufacturers, the number of components is reduced and the device is simplified. Even when facing different semiconductor materials 1 or objects, there is no need to replace the base plate 20. The main boards P1 and P2 can be simply reinstalled to be applied to various frames F1, F2 or placement tables F3, which can greatly save component replacement time, cost and manpower, and improve productivity. In addition, the vacuum pressure can be measured to minimize the loss when the adsorption fails, and the clamping device 30 can be used to achieve a more secure vacuum adsorption. When joining the semiconductor material 1, the height of the platform device 10 can be adjusted by the weight sensor 60 to precisely adjust the joining force. When loading the frame, the type of frame is identified by the weight sensor 60 or the camera 80 that measures the weight of the frame, so as to reset the joining pressurization pressure, and the built-in heater base plate 20 is used to remove moisture and improve the adhesion, and the blowing function is used to remove foreign matter, and the pressure distribution measuring device 93 is used to provide the bonding pressurization pressure of each manufacturer.

[0120] Fig.14 FIG. 4 is a flowchart illustrating a method for bonding semiconductor materials according to some embodiments of the present invention.

[0121] like Figures 1 to 14 As shown, the semiconductor material bonding method according to some embodiments of the present invention may include: step (a), placing a first frame F1 or a second frame F2 on a first main board P1 or a second main board P2 arranged on a base plate 20, and performing vacuum adsorption; step (b), sensing characteristics such as weight or shape of the first frame F1 or the second frame F2; and step (c), adjusting the height of the base plate 20 or the platform device 10 formed with the base plate 20 according to a bonding pressure control signal of each frame matching the sensed characteristic signal.

[0122] In step (c), the type of the frame is identified by the weight sensor 60 or the camera 80 and the height of the stage device 10 is adjusted, thereby resetting the bonding press pressure.

[0123] The present invention describes the embodiment shown in the figure as a reference, but this is only an example. It is understood that those skilled in the art can make various changes and obtain other equivalent embodiments. Therefore, the true technical protection scope of the present invention should be determined according to the technical ideas of the attached claims.

Claims

1. A semiconductor material bonding device, characterized in that: include: a platform device for supporting an object so that the semiconductor material is bonded to the object through a bonding joint; as well as A bottom plate, formed on the platform device, formed with a vacuum flow path for transmitting vacuum pressure; The vacuum flow path comprises: A first vacuum flow channel portion is formed to transmit the vacuum pressure to the first main board capable of vacuum adsorbing the first frame; as well as The second vacuum flow channel groove portion is formed to transmit the vacuum pressure to the second main plate, and the second main plate can vacuum-absorb a second frame having a shape different from the first frame.

2. The semiconductor material bonding device according to claim 1, characterized in that: The first frame is in the shape of a square ring as a whole; The second frame is in the shape of a circular ring as a whole.

3. The semiconductor material bonding device according to claim 2, characterized in that: The plurality of first adsorption holes of the first main board are configured in a square ring shape to vacuum adsorb the first frame; The plurality of second adsorption holes of the second main board are arranged in a ring shape to vacuum adsorb the second frame.

4. The semiconductor material bonding device according to claim 3, characterized in that: The bottom plate comprises: Plate-like matrix; The vacuum flow path is formed on the first surface of the substrate, connected to the first adsorption hole portion when the first frame is installed, and connected to the second adsorption hole portion when the second frame is installed, thereby forming a dual-purpose structure; a vacuum line formed on the second surface of the substrate; and The connecting hole portion passes through the base body from the vacuum line and is connected to the vacuum line.

5. The semiconductor material bonding device according to claim 4, characterized in that: The vacuum flow path is a groove portion whose upper portion is open or a strip-shaped groove portion whose upper portion is open and extends long.

6. The semiconductor material bonding device according to claim 5, characterized in that: The second vacuum flow path groove is a circular corresponding groove formed in an arc shape or configured in an arc shape to correspond to the second frame; The first vacuum flow path groove portion is a square corresponding groove portion extending from the circular corresponding groove portion and formed into a square shape or configured into a square shape to correspond to the first frame.

7. The semiconductor material bonding device according to claim 6, characterized in that: The vacuum flow path includes an arc-straight-line connection type vacuum flow path, which starts from the circular corresponding groove portion in a partial arc shape and is connected to the linear square corresponding groove portion after passing through the extended groove portion extending in one direction.

8. The semiconductor material bonding device according to claim 6, characterized in that: The vacuum flow path includes a V-shaped vacuum flow path that starts from the circular corresponding groove portion configured in a circular shape and is connected to the square corresponding groove portion configured in a square shape through an extension groove portion extending in two directions.

9. The semiconductor material bonding device according to claim 4, characterized in that: A tray-type placement table is placed on the base.

10. The semiconductor material bonding device according to claim 1, characterized in that: It also includes a clamping device, which clamps the first main board or the second main board.

11. The semiconductor material bonding device according to claim 1, characterized in that: Also includes: a vacuum pressure measuring device formed on the bottom plate, measuring the vacuum pressure of the vacuum flow path to identify the vacuum adsorption state of the first frame or the second frame; and The control unit receives the vacuum pressure signal from the vacuum pressure measuring device, identifies the vacuum suction state, and applies an individual control signal to the vacuum line to independently control the vacuum flow path where the vacuum suction fails.

12. The semiconductor material bonding device according to claim 1, characterized in that: Also includes: A weight sensor formed on the base plate or the platform device, for measuring the bonding pressure of the bonding joint when bonding semiconductor materials; and The control unit receives the measured pressurization pressure signal from the weight sensor and determines the bonding pressurization pressure state of the bonding head.

13. The semiconductor material bonding device according to claim 12, characterized in that: It also includes a lifting device, formed on the bottom plate or the platform device, which enables the bottom plate or the platform device to be lifted and lowered to adjust the height of the bottom plate or the platform device; When the bonding pressurization pressure of the bonding head exceeds a standard range, the control unit applies a height control signal to the lifting device.

14. The semiconductor material bonding device according to claim 13, characterized in that: When the first frame or the second frame is loaded, the weight sensor measures the weight of the loaded first frame or the second frame; The control unit receives a weight signal from the weight sensor and applies a frame bonding pressure control signal to the lifting device.

15. The semiconductor material bonding device according to claim 1, characterized in that: Also includes: A camera, used for photographing the first frame or the second frame placed on the bottom plate; as well as The control unit receives the image information captured by the camera and applies a pressure control signal for bonding and pressing each frame to a lifting device for lifting and lowering the base plate or the platform device.

16. The semiconductor material bonding device according to claim 1, characterized in that: A heater device is also included. The heater device is formed on the bottom plate and heats the first main board or the second main board to increase the adhesion of the semiconductor material or remove moisture.

17. The semiconductor material bonding device according to claim 1, characterized in that: Also includes: An air blowing device, formed on the bottom plate, for removing surrounding foreign matter when bonding the semiconductor material; and The pressure distribution measuring device is formed on the bottom plate and measures the pressure distribution of the first frame or the second frame.

18. The semiconductor material bonding device according to claim 1, characterized in that: A guide member is further included, the guide member being formed at the bottom plate and guiding one side of the second frame.

19. A method for bonding semiconductor materials, characterized in that: include: Step (a), placing a first frame or a second frame on a first main board or a second main board disposed on a bottom board, and performing vacuum adsorption; Step (b), sensing characteristics such as weight or shape of the first frame or the second frame; as well as Step (c), adjusting the height of the base plate or the platform device formed with the base plate according to the frame bonding pressurization pressure control signal matching the sensed characteristic signal.

20. A semiconductor material bonding device, characterized in that: include: a platform device for supporting an object so that the semiconductor material is bonded to the object through a bonding joint; and A bottom plate, formed on the platform device, formed with a vacuum flow path for transmitting vacuum pressure; The vacuum flow path comprises: A first vacuum channel groove portion is formed to transmit the vacuum pressure to the first main board capable of vacuum adsorbing the first frame; and A second vacuum flow channel portion is formed to transmit the vacuum pressure to a second main board, and the second main board can vacuum absorb a second frame having a shape different from the first frame; The first frame is in the shape of a square ring as a whole; The second frame is in the shape of a circular ring as a whole; The plurality of first adsorption holes of the first main board are configured in a square ring shape to vacuum adsorb the first frame; The plurality of second adsorption holes of the second main board are arranged in a ring shape to vacuum adsorb the second frame; The bottom plate comprises: Plate-like matrix; The vacuum flow path is formed on the first surface of the substrate, connected to the first adsorption hole portion when the first frame is installed, and connected to the second adsorption hole portion when the second frame is installed, thereby forming a dual-purpose structure; a vacuum line formed on the second surface of the substrate; and A connecting hole portion, which passes through the base body from the vacuum line and is connected to the vacuum line; The vacuum flow path is a groove portion with an open top or a strip-shaped groove portion with an open top and extending relatively long; The second vacuum flow path groove is a circular corresponding groove formed in an arc shape or configured in an arc shape to correspond to the second frame; The first vacuum flow path groove portion is a square corresponding groove portion extending from the circular corresponding groove portion and formed into a square shape or configured into a square shape to correspond to the first frame; The vacuum flow path includes an arc-straight-line connection type vacuum flow path, which starts from the circular corresponding groove portion in a partial arc shape and is connected to the straight square corresponding groove portion after passing through the extended groove portion extending in one direction; The vacuum flow path includes a V-shaped vacuum flow path, the V-shaped vacuum flow path starts from the circular corresponding groove portion configured in a circular shape and is connected to the square corresponding groove portion configured in a square shape through an extended groove portion extending in two directions; Also includes: A clamping device, used for clamping the first main board or the second main board; a vacuum pressure measuring device formed on the bottom plate, measuring the vacuum pressure of the vacuum flow path to identify the vacuum adsorption state of the first frame or the second frame; and a control unit that receives a vacuum pressure signal from the vacuum pressure measuring device and identifies a vacuum adsorption state, and applies a separate control signal to the vacuum line to independently control the vacuum flow path that fails in vacuum adsorption; Also includes: A weight sensor formed on the base plate or the platform device, for measuring the bonding pressure of the bonding joint when bonding semiconductor materials; and a control unit, receiving the measured pressurization pressure signal from the weight sensor and determining the bonding pressurization pressure state of the bonding head; It also includes a lifting device, formed on the bottom plate or the platform device, which enables the bottom plate or the platform device to be lifted and lowered to adjust the height of the bottom plate or the platform device; When the bonding pressurization pressure of the bonding head exceeds a standard range, the control unit applies a height control signal to the lifting device.

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