Bilateral bidirectional solid-state circuit breaker circuit

Abstract

The invention discloses a bilateral bidirectional solid-state circuit breaker circuit, which comprises a main switch device, the main switch device is connected into a main loop and is controlled by a driving circuit, and the driving circuit receives a control signal and controls the on-off of the main switch device; the power side of the main switching device is provided with a power side voltage clamping circuit, and the driving side of the main switching device is provided with a driving side voltage clamping circuit; the power side voltage clamping circuit and the driving side voltage clamping circuit cooperate with each other and clamp overvoltage in the turn-off process of the main switching device so as to protect the main switching device. According to the solid-state circuit breaker, the mode that the bidirectional silicon controlled rectifier and the piezoresistor are connected in series is adopted on the power side of the main switching device, so that the voltage use level of the solid-state circuit breaker is greatly improved; the defect that in the prior art, only the voltage level of a power device can be increased in order to increase the fault current turn-off capacity is overcome, and therefore the cost and the size are greatly reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of circuit breaker circuits, and in particular to a double-sided bidirectional solid-state circuit breaker circuit. Background Art

[0002] The solid-state circuit breaker is a new type of DC microgrid protection device. It uses digital sensors to monitor fault current and quickly cut off the fault current through power semiconductors. It has the advantages of high speed (microsecond level shutdown), no arc, and long service life. In order to protect the solid-state circuit breaker from overvoltage and excessive power loss during the shutdown process, it is generally necessary to add an overvoltage protection circuit. The traditional solution generally uses the method of connecting a varistor and an RCD circuit in parallel on the power side to clamp and protect the power semiconductor to prevent overvoltage breakdown. The RCD circuit is used to clamp the overvoltage rising slope, and the varistor is used to clamp the overvoltage and absorb the energy generated during the shutdown process.

[0003] However, the traditional design has the following problems: 1) The varistor itself has parasitic inductance. When the fault current is commutated into the varistor energy absorption circuit during the shutdown process, an overvoltage spike will be generated, and this overvoltage spike will continue to increase with the increase of current. This will inevitably result in the design of solid-state circuit breakers. In order to increase the ability to shut off the fault current, the voltage level of the power device can only be increased. As the voltage level of the power device increases, its manufacturing and use costs are greatly increased; 2) When used in high-power occasions, various devices in the clamping energy absorption circuit are expensive and large in size. Summary of the invention

[0004] The purpose of the present invention is to solve the deficiencies in the prior art and provide a double-sided bidirectional solid-state circuit breaker circuit.

[0005] The objective of the present invention is achieved through the following technical solutions: a double-sided bidirectional solid-state circuit breaker circuit, comprising a main switch device, the main switch device is connected to a main circuit and is controlled by a drive circuit, the drive circuit receives a control signal and controls the on and off of the main switch device; a power side voltage clamping circuit is provided on the power side of the main switch device, and a drive side voltage clamping circuit is provided on the drive side of the main switch device; the power side voltage clamping circuit and the drive side voltage clamping circuit cooperate with each other and clamp overvoltage during the shutdown process of the main switch device to protect the main switch device.

[0006] Preferably, the power side voltage clamping circuit consists of a bidirectional thyristor T1, a varistor MOV, a capacitor C1, a bidirectional transient suppression diode D1, a resistor R1, a resistor R2, a resistor R3, and a capacitor C2. The resistors R1, R2, and R3 are connected in series in sequence. The first anode of the bidirectional thyristor T1 is connected to one end of the resistor R1 and connected to the main circuit. The second anode of the bidirectional thyristor T1 is connected to one end of the varistor MOV. The gate of the bidirectional thyristor T1 is connected to the other end of the resistor R1. The varistor MOV and the capacitor C1 are simultaneously connected in parallel with the resistor R3. One end of the resistor R3 is connected to the main circuit. The capacitor C2 is connected in parallel with the resistor R2. The capacitor C2 and the resistor R2 form a buffer circuit. The bidirectional transient suppression diode D1 is connected in parallel with the resistor R1.

[0007] Preferably, the resistance values ​​of the resistor R1 and the resistor R3 satisfy the following formula:

[0008] Among them, V DC is the static bus voltage; V RDM It is the maximum withstand voltage of the bidirectional thyristor.

[0009] Preferably, the bidirectional transient suppression diode D1 satisfies the following formula: ; Among them, V R1 is the voltage divided by resistor R1; V BR is the breakdown voltage of the bidirectional transient suppression diode D1.

[0010] Preferably, the selection of the varistor MOV should satisfy the following requirements: when the overvoltage is at the maximum value, the maximum current flowing through it is greater than the bus current; when the varistor MOV is at the bus voltage, the current value thereof is less than the holding current of the bidirectional thyristor T1.

[0011] Preferably, when working in static state, the resistors R1, R2 and R3 divide the voltage, and the divided voltage of the resistor R1 is less than the breakdown voltage of the bidirectional transient suppression diode D1, so that the current does not flow into the bidirectional thyristor T1, thereby turning on the bidirectional thyristor T1 and the varistor MOV does not absorb energy; When dynamically turned off, the voltage on both sides of the main switch device rises rapidly, and the voltage applied to the bidirectional transient suppression diode D1 reaches the breakdown voltage of the bidirectional transient suppression diode D1, causing the bidirectional transient suppression diode D1 to break down. At this time, the current flows through the gate of the bidirectional thyristor T1 and turns on the bidirectional thyristor T1. The fault current flows into the capacitor C through the bidirectional thyristor T1. 1， The varistor MOV starts to clamp and absorb the fault current.

[0012] Preferably, the main switch device is composed of two insulated gate bipolar transistors connected in series, namely a first insulated gate bipolar transistor and a second insulated gate bipolar transistor; the emitter of the first insulated gate bipolar transistor is connected to the emitter of the second insulated gate bipolar transistor, and the collector of the first insulated gate bipolar transistor is connected to the collector of the second insulated gate bipolar transistor and connected to the main circuit; The driving circuit includes a first driving module and a second driving module, and the driving side voltage clamping circuit includes a capacitor C3, a capacitor C4, a bidirectional transient suppression diode D2, a bidirectional transient suppression diode D3, a bidirectional transient suppression diode D4, and a bidirectional transient suppression diode D5; The positive electrode of the first driving module is connected to one end of the bidirectional transient suppression diode D3 and the gate of the first insulated gate bipolar transistor at the same time, and the negative electrode of the first driving module is connected to the emitter of an insulated gate bipolar transistor; the other end of the silicon-controlled driver D3 is connected to one end of the silicon-controlled driver D2, and the other end of the silicon-controlled driver D2 is connected to the collector of the first insulated gate bipolar transistor; the capacitor C3 is connected in parallel with the silicon-controlled driver D3; The positive electrode of the second driving module is connected to one end of the bidirectional transient suppression diode D5 and the gate of the second insulated gate bipolar transistor at the same time, and the negative electrode of the second driving module is connected to the emitter of the second insulated gate bipolar transistor; the other end of the thyristor driver D5 is connected to one end of the thyristor driver D4, and the other end of the thyristor driver D4 is connected to the collector of the second insulated gate bipolar transistor; the capacitor C4 is connected in parallel with the thyristor driver D4.

[0013] Preferably, the level selection of the transient suppression diode voltage D2, the transient suppression diode voltage D3, the transient suppression diode voltage D4, and the transient suppression diode voltage D5 should meet the following conditions: The maximum clamping voltage after the bidirectional transient suppression diode D2 and the bidirectional transient suppression diode D2 are connected in series is less than the residual voltage of the varistor MOV; After the bidirectional transient suppression diode D4 and the bidirectional transient suppression diode D5 are connected in series, the maximum clamping voltage is less than the residual voltage of the varistor MOV.

[0014] The beneficial effects of the present invention are: 1. The present invention uses a bidirectional thyristor in series with a varistor on the power side of the main switch device to greatly improve the voltage usage level of the solid-state circuit breaker, and triggers the bidirectional thyristor T1 through a bidirectional transient suppression diode, thereby solving the deficiency of the traditional technology that the voltage level of the power device can only be increased to increase the ability to shut off the fault current, thereby greatly reducing its cost and volume.

[0015] 2. The driving side of the main switch device uses a transient suppression diode to actively clamp the overvoltage of the solid-state circuit breaker. This effectively prevents the overvoltage from breaking down the power device when the fault current is too large, with almost no additional cost, thereby ensuring the safety of the power device. Through the coordination between the power-side voltage clamping circuit and the driving-side voltage clamping circuit, the shortcomings of the traditional design are effectively overcome, further avoiding the risk of the main switch device (IGBT) being broken down. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is an overall schematic diagram of the double-sided bidirectional solid-state circuit breaker circuit of the present invention.

[0017] Figure 2 Schematic diagram of the power side voltage clamping circuit.

[0018] Figure 3 Schematic diagram of the voltage clamping circuit on the driving side.

[0019] Figure 4 This is a schematic diagram of a double-sided bidirectional solid-state circuit breaker circuit connected to a management power grid.

[0020] Figure 5 This is the current and voltage waveform when the double-sided voltage clamp circuit is turned off. DETAILED DESCRIPTION

[0021] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.

[0022] Those skilled in the art should understand that, in the disclosure of the present invention, the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, the above terms should not be understood as limiting the present invention.

[0023] It is to be understood that the term "one" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element may be one, while in another embodiment, the number of the element may be multiple, and the term "one" should not be understood as a limitation on the quantity.

[0024] like Figures 1 to 5As shown, a double-sided bidirectional solid-state circuit breaker circuit includes a main switch device, which is connected to a main circuit and controlled by a drive circuit. The drive circuit receives a control signal and controls the on and off of the main switch device; a power side voltage clamping circuit is provided on the power side of the main switch device, and a drive side voltage clamping circuit is provided on the drive side of the main switch device; the power side voltage clamping circuit and the drive side voltage clamping circuit cooperate with each other and clamp overvoltage during the shutdown process of the main switch device to protect the main switch device.

[0025] Specifically, the power side voltage clamp circuit is as follows: Figure 2 As shown, the power side voltage clamping circuit consists of a bidirectional thyristor T1, a varistor MOV, a capacitor C1, a bidirectional transient suppression diode D1, a resistor R1, a resistor R2, a resistor R3, and a capacitor C2. The resistors R1, R2, and R3 are connected in series in sequence. The first anode of the bidirectional thyristor T1 is connected to one end of the resistor R1 and connected to the main circuit. The second anode of the bidirectional thyristor T1 is connected to one end of the varistor MOV. The gate of the bidirectional thyristor T1 is connected to the other end of the resistor R1. The varistor MOV and the capacitor C1 are simultaneously connected in parallel with the resistor R3. One end of the resistor R3 is connected to the main circuit. The capacitor C2 is connected in parallel with the resistor R2. The capacitor C2 and the resistor R2 form a buffer circuit. The bidirectional transient suppression diode D1 is connected in parallel with the resistor R1.

[0026] The resistance values ​​of resistors R1 and R3 satisfy the following formula:

[0027] Among them, V DC is the static bus voltage; V RDM is the maximum withstand voltage of the bidirectional thyristor. 1、 R 2、 R3 represents the resistance values ​​of the resistors R1 , R2 and R3 respectively.

[0028] The selection of the varistor MOV used for energy absorption clamping in the present invention should meet the following requirements: when the overvoltage is at the maximum value, the maximum current flowing through it is greater than the bus current; when the varistor MOV is at the bus voltage, the current value thereof is less than the holding current of the bidirectional thyristor T1.

[0029] The bidirectional transient suppression diode D1 satisfies the following formula: ; Among them, V R1 is the voltage divided by resistor R1; V BR is the breakdown voltage of the bidirectional transient suppression diode D1.

[0030] When the power side voltage clamp circuit is in static operation, the resistors R1, R2 and R3 divide the voltage. At this time, the divided voltage of the resistor R1 is less than the breakdown voltage of the bidirectional transient suppression diode D1, so that the current does not flow into the bidirectional thyristor T1, thereby turning on the bidirectional thyristor T1 and the varistor MOV does not absorb energy. When dynamically turned off, the voltage on both sides of the main switch device rises rapidly, and the capacitor C1 is close to a short-circuit state when the voltage changes rapidly, so the voltage is almost entirely borne by the bidirectional transient suppression diode D1. At this time, the voltage applied to the bidirectional transient suppression diode D1 reaches the breakdown voltage of the bidirectional transient suppression diode D1, causing the bidirectional transient suppression diode D1 to be broken down. At this time, the current flows through the gate of the bidirectional thyristor T1 and turns on the bidirectional thyristor T1. The fault current flows into the capacitor C1 through the bidirectional thyristor T1. At this time, the bidirectional transient suppression diode D1 is short-circuited and no longer bears the voltage. The varistor MOV starts to clamp and absorb the fault current.

[0031] Assuming the current is from Figure 2 The forward direction from end ① to end ② is positive. The forward current flows from end ① through bidirectional transient suppression diode D1, bidirectional thyristor T1, capacitor C1 and reaches end ②. When it flows through the gate of bidirectional thyristor T1, due to the unique characteristics of bidirectional thyristor T1, any direction of current flowing through its gate can turn it on. Therefore, bidirectional thyristor T1 is turned on at this time. On the contrary, if the current flows from Figure 2 If the direction from end ② to end ① is positive, the current will flow from end ② through capacitor C in sequence. 1、 The current reaches the ① end after the bidirectional thyristor T1 and the bidirectional transient suppression diode D1. When the current flows through the gate of the bidirectional thyristor T1, the bidirectional thyristor T1 is turned on.

[0032] like Figure 3 As shown, the main switch device is composed of two insulated gate bipolar transistors (IGBT) connected in series, namely a first insulated gate bipolar transistor and a second insulated gate bipolar transistor; the emitter of the first insulated gate bipolar transistor is connected to the emitter of the second insulated gate bipolar transistor, and the collector of the first insulated gate bipolar transistor is connected to the collector of the second insulated gate bipolar transistor and connected to the main circuit.

[0033] The driving circuit includes a first driving module and a second driving module (corresponding to Figure 3 U Driver1 and U Driver2 ).

[0034] The driving side voltage clamping circuit includes a capacitor C3, a capacitor C4, a bidirectional transient suppression diode D2, a bidirectional transient suppression diode D3, a bidirectional transient suppression diode D4, and a bidirectional transient suppression diode D5; the positive electrode of the first driving module is simultaneously connected to one end of the bidirectional transient suppression diode D3 and the gate of the first insulated gate bipolar transistor, and the negative electrode of the first driving module is connected to the emitter of an insulated gate bipolar transistor; the other end of the silicon-controlled driver D3 is connected to one end of the silicon-controlled driver D2, and the other end of the silicon-controlled driver D2 is connected to the gate of the first insulated gate bipolar transistor. The capacitor C3 is connected to the collector of the first insulated gate bipolar transistor; the capacitor C3 is connected to the thyristor driver D3 in parallel; the positive electrode of the second driving module is simultaneously connected to one end of the bidirectional transient suppression diode D5 and the gate of the second insulated gate bipolar transistor, and the negative electrode of the second driving module is connected to the emitter of the second insulated gate bipolar transistor; the other end of the thyristor driver D5 is connected to one end of the thyristor driver D4, and the other end of the thyristor driver D4 is connected to the collector of the second insulated gate bipolar transistor; the capacitor C4 is connected to the thyristor driver D4 in parallel.

[0035] Among them, the level selection of TVS diode voltage D2, TVS diode voltage D3, TVS diode voltage D4, and TVS diode voltage D5 should meet the following conditions: the maximum clamping voltage after the bidirectional TVS diode D2 and the bidirectional TVS diode D2 are connected in series is less than the residual voltage of the varistor MOV; the maximum clamping voltage after the bidirectional TVS diode D4 and the bidirectional TVS diode D5 are connected in series is less than the residual voltage of the varistor MOV.

[0036] When dynamically shutting down, the voltage rises rapidly. Although the varistor MOV will clamp the voltage after starting and bear all fault currents; however, due to the process of current switching from the main switch device to the varistor loop, the parasitic inductance of the varistor makes this process not instantaneous. If the fault current is too large at this time, it will break down the main switch device. Therefore, when the voltage rises to the starting point of the varistor MOV, the bidirectional transient suppression diode D2 begins to break down, and the current flows from the capacitor C3 and the bidirectional transient suppression diode D2 into the gate of the insulated gate bipolar transistor (IGBT), clamping the turn-off voltage slope of the IGBT. Since the turn-off voltage slope is limited, the voltage gradually rises at this time, but The rising process is relatively slow until the voltage is much larger than the residual voltage of the varistor MOV and the voltage is close to the rated voltage of the main switch device, then the bidirectional transient suppression diode D3 is broken down, and the current flows into the gate of the insulated gate bipolar transistor (IGBT) through the bidirectional transient suppression diode D1 and the bidirectional transient suppression diode D3, and the turn-off voltage slope no longer changes; at this time, the commutation process is not completely completed, so part of the current will be in the insulated gate bipolar transistor and the other part will be in the varistor, but the current in the insulated gate bipolar transistor (IGBT) is small and will not be over-powered to burn the insulated gate bipolar transistor, thereby protecting the insulated gate bipolar transistor.

[0037] like Figure 5 As stated, Figure 5 This is the current and voltage waveform when the double-sided voltage clamp circuit is turned off.

[0038] At time t0, the fault current begins to generate and rises rapidly; At time t1, the fault current is detected, the drive signal is sent, and the IGBT begins to receive the signal and shut off the fault current. At this time, due to the shutdown delay, the current will still increase for a period of time, but due to the characteristic voltage of the IGBT device itself, the increase will be ahead of the current drop.

[0039] At t2, the current begins to decrease, and the IGBT device enters the late Miller platform. At this time, the voltage rises to the breakdown voltage of the bidirectional transient suppression diode D1. The bidirectional transient suppression diode D1 is broken down and the pulse current flows into the gate of the bidirectional thyristor T1. The bidirectional thyristor T1 is turned on, and the voltage of the varistor MOV soon becomes the same as the main circuit voltage. At this time, the current starts to flow from the bidirectional thyristor T1 to the gate of the bidirectional thyristor T1. l Flows into capacitor C1, and the voltage rising slope begins to be clamped.

[0040] At time t3, the voltage reaches the primary clamping voltage value on the driver side, the bidirectional transient suppression diode D2 is broken down, and the current begins to flow into the gate of the IGBT through the bidirectional transient suppression diode D2 and the capacitor C3; at this time, the current rising slope is quickly clamped, and the current flowing into the capacitor C2 begins to drop rapidly.

[0041] At time t4, the voltage reaches the secondary clamping voltage value on the driver side, the bidirectional transient suppression diode D3 is broken down, and the current flows into the gate of the IGBT through the bidirectional transient suppression diode D2 and the bidirectional transient suppression diode D3. At this time, the loop voltage will be clamped quickly and the voltage will no longer change. Since the clamping voltage value is greater than the residual voltage value of the varistor MOV, the current begins to gradually commutate into the varistor MOV and the voltage no longer changes, resulting in no current flowing into the capacitor C1.

[0042] At time t5, the current has been completely commutated into the varistor, and there is no current in the main circuit. The current energy will be quickly consumed by the varistor MOV, and the voltage begins to drop.

[0043] At time t6, the current has basically dropped to about 100mA, which is less than the holding current of the bidirectional thyristor T1. Therefore, the bidirectional thyristor T1 will be turned off, and the capacitor C1 starts to discharge the varistor MOV. The voltage on the varistor MOV continues to drop, and the shutdown process is basically completed.

[0044] At time t7, the voltage on capacitor C1 is consistent with the voltage after voltage division by resistor R3, and the shutdown process is completely completed.

[0045] The present invention has the following advantages: 1. The present invention uses a bidirectional thyristor in series with a varistor on the power side of the main switch device to greatly improve the voltage usage level of the solid-state circuit breaker, and triggers the bidirectional thyristor T1 through a bidirectional transient suppression diode, thereby solving the deficiency of the traditional technology that the voltage level of the power device can only be increased to increase the ability to shut off the fault current, thereby greatly reducing its cost and volume.

[0046] 2. The driving side of the main switch device uses a transient suppression diode to actively clamp the overvoltage of the solid-state circuit breaker. This effectively prevents the overvoltage from breaking down the power device when the fault current is too large, with almost no additional cost, thereby ensuring the safety of the power device. Through the coordination between the power-side voltage clamping circuit and the driving-side voltage clamping circuit, the shortcomings of the traditional design are effectively overcome, further avoiding the risk of the main switch device (IGBT) being broken down.

[0047] The present invention is not limited to the above-mentioned optimal implementation mode. Anyone can derive other various forms of products under the inspiration of the present invention. However, no matter what changes are made in the shape or structure, all technical solutions that are the same or similar to those of the present application fall within the protection scope of the present invention.

Claims

1. A double-sided bidirectional solid-state circuit breaker circuit, characterized in that: It includes a main switch device, which is connected to the main circuit and controlled by a drive circuit. The drive circuit receives a control signal and controls the on and off of the main switch device. A power side voltage clamping circuit is provided on the power side of the main switch device, and a drive side voltage clamping circuit is provided on the drive side of the main switch device. The power side voltage clamping circuit and the drive side voltage clamping circuit cooperate with each other and clamp overvoltage during the shutdown process of the main switch device to protect the main switch device.

2. A double-sided bidirectional solid-state circuit breaker circuit according to claim 1, characterized in that: The power side voltage clamping circuit consists of a bidirectional thyristor T1, a varistor MOV, a capacitor C1, a bidirectional transient suppression diode D1, a resistor R1, a resistor R2, a resistor R3, and a capacitor C2. The resistors R1, R2, and R3 are connected in series in sequence. The first anode of the bidirectional thyristor T1 is connected to one end of the resistor R1 and connected to the main circuit. The second anode of the bidirectional thyristor T1 is connected to one end of the varistor MOV. The gate of the bidirectional thyristor T1 is connected to the other end of the resistor R1. The varistor MOV and the capacitor C1 are simultaneously connected in parallel with the resistor R3. One end of the resistor R3 is connected to the main circuit. The capacitor C2 is connected in parallel with the resistor R2. The capacitor C2 and the resistor R2 form a buffer circuit. The bidirectional transient suppression diode D1 is connected in parallel with the resistor R1.

3. A double-sided bidirectional solid-state circuit breaker circuit according to claim 2, characterized in that: The resistance values ​​of resistors R1 and R3 satisfy the following formula: ； Among them, V DC is the static bus voltage; V RDM It is the maximum withstand voltage of the bidirectional thyristor.

4. A double-sided bidirectional solid-state circuit breaker circuit according to claim 2, characterized in that: The bidirectional transient suppression diode D1 satisfies the following formula: ； Among them, V R1 is the voltage divided by resistor R1; V BR is the breakdown voltage of the bidirectional transient suppression diode D1.

5. A double-sided bidirectional solid-state circuit breaker circuit according to claim 2, characterized in that: The selection of the varistor MOV should meet the following requirements: when the overvoltage is at its maximum value, the maximum current flowing through it is greater than the bus current; when the varistor MOV is at the bus voltage, its current value is less than the holding current of the bidirectional thyristor T1.

6. A double-sided bidirectional solid-state circuit breaker circuit according to claim 2, characterized in that: When working statically, the resistors R1, R2 and R3 divide the voltage. At this time, the divided voltage of the resistor R1 is less than the breakdown voltage of the bidirectional transient suppression diode D1, so that the current does not flow into the bidirectional thyristor T1, thereby turning on the bidirectional thyristor T1 and the varistor MOV does not absorb energy. When dynamically turned off, the voltage on both sides of the main switch device rises rapidly, and the voltage applied to the bidirectional transient suppression diode D1 reaches the breakdown voltage of the bidirectional transient suppression diode D1, causing the bidirectional transient suppression diode D1 to break down. At this time, the current flows through the gate of the bidirectional thyristor T1 and turns on the bidirectional thyristor T1. The fault current flows into the capacitor C through the bidirectional thyristor T1. 1， The varistor MOV starts to clamp and absorb the fault current.

7. A double-sided bidirectional solid-state circuit breaker circuit according to claim 2, characterized in that: The main switch device is composed of two insulated gate bipolar transistors connected in series, namely a first insulated gate bipolar transistor and a second insulated gate bipolar transistor; the emitter of the first insulated gate bipolar transistor is connected to the emitter of the second insulated gate bipolar transistor, and the collector of the first insulated gate bipolar transistor is connected to the collector of the second insulated gate bipolar transistor and connected to the main circuit; The driving circuit includes a first driving module and a second driving module, and the driving side voltage clamping circuit includes a capacitor C3, a capacitor C4, a bidirectional transient suppression diode D2, a bidirectional transient suppression diode D3, a bidirectional transient suppression diode D4, and a bidirectional transient suppression diode D5; The positive electrode of the first driving module is connected to one end of the bidirectional transient suppression diode D3 and the gate of the first insulated gate bipolar transistor at the same time, and the negative electrode of the first driving module is connected to the emitter of an insulated gate bipolar transistor; the other end of the silicon-controlled driver D3 is connected to one end of the silicon-controlled driver D2, and the other end of the silicon-controlled driver D2 is connected to the collector of the first insulated gate bipolar transistor; the capacitor C3 is connected in parallel with the silicon-controlled driver D3; The positive electrode of the second driving module is connected to one end of the bidirectional transient suppression diode D5 and the gate of the second insulated gate bipolar transistor at the same time, and the negative electrode of the second driving module is connected to the emitter of the second insulated gate bipolar transistor; the other end of the thyristor driver D5 is connected to one end of the thyristor driver D4, and the other end of the thyristor driver D4 is connected to the collector of the second insulated gate bipolar transistor; the capacitor C4 is connected in parallel with the thyristor driver D4.

8. A double-sided bidirectional solid-state circuit breaker circuit according to claim 7, characterized in that: The level selection of transient suppression diode voltage D2, transient suppression diode voltage D3, transient suppression diode voltage D4, transient suppression diode voltage D5 should meet the following conditions: The maximum clamping voltage after the bidirectional transient suppression diode D2 and the bidirectional transient suppression diode D2 are connected in series is less than the residual voltage of the varistor MOV; After the bidirectional transient suppression diode D4 and the bidirectional transient suppression diode D5 are connected in series, the maximum clamping voltage is less than the residual voltage of the varistor MOV.

Images