Manufacturing method of weakening structure, weakening structure and mass transfer method

Abstract

The invention relates to the technical field of display, in particular to a manufacturing method of a weakening structure, the weakening structure and a mass transfer method, the weakening structure is manufactured through the manufacturing method of the weakening structure, and the mass transfer method is achieved through the weakening structure. The manufacturing method of the weakening structure comprises the steps that a substrate loaded with a plurality of light-emitting chips is provided, a sacrificial layer is formed on the face, loaded with the light-emitting chips, of the substrate, and the thickness of the sacrificial layer is larger than the height of any light-emitting chip; the sacrificial layer is etched to form a plurality of first channels so as to expose part of the surface of each light-emitting chip, then a supporting layer is continuously formed, and the supporting layer covers the whole sacrificial layer and is filled in the plurality of first channels; and finally, stripping the substrate, removing the sacrificial layer, and filling the supporting layer in the plurality of first channels to form a supporting arm to suspend each light-emitting chip below the supporting layer so as to form a weakening structure convenient to transfer.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a method for manufacturing a weakened structure, a weakened structure and a mass transfer method. Background Art

[0002] With the development of optoelectronic display technology and semiconductor manufacturing technology, display technology has evolved from liquid crystal display technology to organic light-emitting diode display technology and micro light-emitting diode chip (Micro Light Emitting Diode, Micro LED) display technology. Among them, micro light-emitting diode chips have the characteristics of small size, high integration and self-luminescence. Compared with liquid crystal display technology and organic light-emitting diode display technology, they have greater advantages in brightness, resolution, contrast, energy consumption, service life, response speed and thermal stability.

[0003] In the process of preparing Micro LED display devices, it is necessary to transfer millions or even tens of millions of Micro LED chips from the growth substrate to the driving backplane. In order to facilitate the transfer and improve the transfer efficiency, it is necessary to provide a chip structure that is easy to transfer. Summary of the invention

[0004] The object of the present invention is to provide a method for manufacturing a weakened structure to form a weakened structure of a light-emitting chip, so as to facilitate transfer and improve transfer efficiency.

[0005] Another object of the present invention is to provide a weakening structure, so that the light-emitting chip can be picked up more easily by means of the weakening structure, thereby improving the transfer efficiency.

[0006] Another object of the present invention is to provide a mass transfer method to transfer light-emitting chips through a weakened structure to improve transfer efficiency.

[0007] In order to achieve the above purpose, the technical solution adopted by the embodiment of the present invention is as follows:

[0008] In a first aspect, a method for manufacturing a weakened structure comprises: providing a substrate carrying a plurality of light-emitting chips; forming a sacrificial layer on a side of the substrate carrying the plurality of light-emitting chips, wherein the thickness of the sacrificial layer is greater than the height of any one of the light-emitting chips; etching the sacrificial layer to form a plurality of first grooves to expose a portion of the surface of each of the light-emitting chips; forming a supporting layer on the sacrificial layer, wherein the supporting layer covers the entire sacrificial layer and fills the plurality of first grooves; peeling off the substrate; and removing the sacrificial layer to form a weakened structure.

[0009] A sacrificial layer is first formed on one side of a substrate carrying multiple light-emitting chips, and then a support layer is formed after etching multiple first grooves on the sacrificial layer. After the sacrificial layer is removed, the support layer integrated into the multiple first grooves forms a support arm to suspend the multiple light-emitting chips, thereby forming a weakened structure that is easy to transfer.

[0010] Furthermore, after forming a supporting layer on the sacrificial layer, the supporting layer covers the entire sacrificial layer and is filled into the multiple first channels, the method further includes the steps of: etching a side of the supporting layer away from the sacrificial layer to form a multiple second channels; and forming a flexible substrate layer on the supporting layer, the flexible substrate layer covers the entire supporting layer and is filled into the multiple second channels.

[0011] By etching a plurality of second channels on the other side of the support layer, the flexible substrate layer formed on the support layer can be more firmly grasped; at the same time, the provision of the flexible substrate layer can better alleviate the stress on the support layer during the transfer process, thereby preventing the light-emitting chip from being damaged by stress.

[0012] Furthermore, after forming a flexible substrate layer on the support layer, the method further comprises the step of: polishing a side of the flexible substrate layer away from the support layer, so that the side of the flexible substrate layer away from the support layer becomes flat.

[0013] By polishing and flattening the other side of the flexible substrate layer, it is easier to transfer the light-emitting chip corresponding to the weakened structure, avoiding the influence of height difference and reducing the transfer yield.

[0014] In a second aspect, a weakened structure is provided, which is manufactured by any one of the manufacturing methods of the weakened structure, and the weakened structure comprises: a plurality of light-emitting chips; a support layer, which is arranged above the plurality of light-emitting chips; a plurality of support arms, which are formed by solidifying the plurality of first grooves in the sacrificial layer after the support layer is filled with the support layer, and after the sacrificial layer is removed, the plurality of support arms are respectively connected to a portion of the surface of each of the light-emitting chips to be suspended below the support layer.

[0015] The light emitting chip is suspended under the supporting layer by supporting the supporting arm, which greatly reduces the contact area between the light emitting chip and the supporting layer, making it easier to transfer the light emitting chip.

[0016] Furthermore, the weakening structure further comprises a flexible substrate layer, a surface of the support layer away from the light emitting chip is further provided with a plurality of second trenches, and the entire flexible substrate layer is provided on the support layer and filled into the second trenches.

[0017] By setting up a flexible substrate layer, the stress effect on the light-emitting chip during the mass transfer process can be alleviated. By first setting up multiple second channels on the support layer and then forming the flexible substrate layer, the purpose is to facilitate a more firm contact between the flexible substrate layer and the support layer.

[0018] In a third aspect, a mass transfer method is provided, the method comprising: providing a transfer carrier provided with an adhesive layer; aligning and fitting a side of the transfer carrier provided with the adhesive layer with any one of the weakened structures, and under the action of force, the support arm of the weakened structure breaks to transfer the light-emitting chip to the transfer carrier.

[0019] During the transfer process, the transfer carrier provided with the adhesive layer is directly aligned and fitted with the weakened structure, so that the support arm connecting the light-emitting chip and the support layer can be broken, and the transfer is completed, thereby improving the transfer efficiency.

[0020] The embodiments of the present invention provide a method for manufacturing a weakened structure, a weakened structure and a mass transfer method. The weakened structure is manufactured by the method for manufacturing the weakened structure, and the mass transfer method is realized by the weakened structure. The method for manufacturing the weakened structure includes: providing a substrate carrying multiple light-emitting chips, forming a sacrificial layer on one side of the substrate carrying the multiple light-emitting chips, and the thickness of the sacrificial layer is greater than the height of any light-emitting chip; then etching the sacrificial layer to form multiple first grooves to expose a portion of the surface of each light-emitting chip, and then continuing to form a supporting layer, which covers the entire sacrificial layer and fills the multiple first grooves; finally, peeling off the substrate, removing the sacrificial layer, and the supporting layer filled in the multiple first grooves forms a supporting arm to suspend each light-emitting chip below the supporting layer to form a weakened structure that is easy to transfer.

[0021] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0023] Figure 1 A schematic flow chart of a method for manufacturing a weakened structure provided by an embodiment of the present invention is shown.

[0024] Figure 2 A schematic structural diagram of a substrate provided by an embodiment of the present invention is shown.

[0025] Figure 3 A schematic diagram of forming a sacrificial layer provided by an embodiment of the present invention is shown.

[0026] Figure 4 A schematic diagram showing the state of processing a sacrificial layer provided by an embodiment of the present invention is shown.

[0027] Figure 5 A schematic diagram showing the formation state of the support layer provided by an embodiment of the present invention is shown.

[0028] Figure 6 A schematic diagram of a substrate after peeling off provided by an embodiment of the present invention is shown.

[0029] Figure 7 A schematic diagram of a state of removing a sacrificial layer provided by an embodiment of the present invention is shown.

[0030] Figure 8 A schematic flow chart of another method for manufacturing a weakening structure provided by an embodiment of the present invention is shown.

[0031] Fig. 9 A schematic diagram of forming a second channel provided by an embodiment of the present invention is shown.

[0032] Fig.10 A schematic diagram of forming a flexible substrate layer provided by an embodiment of the present invention is shown.

[0033] Fig.11 A schematic diagram of processing a flexible substrate layer provided by an embodiment of the present invention is shown.

[0034] Fig.12 A schematic diagram after peeling off a substrate provided by an embodiment of the present invention is shown.

[0035] Fig.13 A schematic diagram of a state of removing a sacrificial layer provided by an embodiment of the present invention is shown.

[0036] Fig.14 A schematic flow chart of a mass transfer method provided by an embodiment of the present invention is shown.

[0037] Fig.15 A schematic structural diagram of a transfer carrier provided in an embodiment of the present invention is shown.

[0038] Fig.16 A schematic diagram of the transfer process provided by an embodiment of the present invention is shown.

[0039] Diagram:

[0040] 100 - substrate; 110 - light-emitting chip; 120 - sacrificial layer; 121 - first channel; 130 - supporting layer; 131 - supporting arm; 132 - second channel; 140 - flexible substrate layer; 150 - transfer carrier; 151 - adhesive layer. DETAILED DESCRIPTION

[0041] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. The components of the embodiments of the present invention generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents the selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present invention.

[0042] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. At the same time, in the description of the present invention, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0043] Please refer to Figure 1 , is a schematic flow chart of a method for manufacturing a weakened structure provided by an embodiment of the present invention, the method comprising:

[0044] S110, providing a substrate carrying a plurality of light-emitting chips.

[0045] For details, please refer to Figure 2 , is a schematic diagram of the structure of a substrate 100 provided in an embodiment of the present invention, on which a plurality of light-emitting chips 110 are carried, and the plurality of light-emitting chips 110 can emit one or more light rays such as red light, green light, and blue light. The substrate 100 can be a growth substrate (such as a sapphire substrate), on which an epitaxial layer is formed, and then the epitaxial layer is cut to form a plurality of light-emitting chips 110 (in this case, the plurality of light-emitting chips 110 emit light rays of a single color); the substrate 100 can also be a temporary substrate, that is, after the light-emitting chips 110 are transferred and picked up from the growth substrate, they are placed on the temporary substrate, and in this case, the plurality of light-emitting chips 110 carried on the temporary substrate may emit light rays of a single color or may emit light rays of multiple colors.

[0046] S120, forming a sacrificial layer on a side of the substrate carrying the plurality of light-emitting chips, wherein a thickness of the sacrificial layer is greater than a height of any one of the light-emitting chips.

[0047] like Figure 3 As shown, it is a schematic diagram of the formation of the sacrificial layer 120 provided in an embodiment of the present invention. Specifically, a sacrificial layer 120 is evaporated on one side of the substrate 100 carrying multiple light-emitting chips 110. The thickness of the sacrificial layer 120 is greater than the height of any light-emitting chip 110. The reason why the thickness of the sacrificial layer 120 needs to be greater than the height of the light-emitting chip 110 is that after the subsequent removal of the sacrificial layer 120, the light-emitting chip 110 and the subsequent support layer 130 can have a smaller contact area. The smaller the contact area, the more conducive to peeling and mass transfer. Further, the material of the sacrificial layer 120 includes metal aluminum. In other words, the sacrificial layer 120 can be a single metal aluminum material or a mixture of metal aluminum and other materials. Furthermore, if the sacrificial layer 120 is a single metal aluminum, its preferred thickness is 2um-6um.

[0048] S130, etching the sacrificial layer to form a plurality of first trenches to expose a portion of the surface of each of the light-emitting chips.

[0049] like Figure 4 , is a schematic diagram of the state of processing the sacrificial layer 120 provided by an embodiment of the present invention, specifically, etching the sacrificial layer 120 to form a plurality of first trenches 121 to expose a portion of the surface of each light-emitting chip 110. That is, a plurality of first trenches 121 are etched on the sacrificial layer 120 on each light-emitting chip 110, and the first trenches 121 are not located at the electrode position of the light-emitting chip 110, but are located in other areas except the electrode position; the first trenches 121 are used to form a supporting structure later, so as to facilitate the peeling and transfer of the light-emitting chip 110.

[0050] S140, forming a supporting layer on the sacrificial layer, wherein the supporting layer covers the entire sacrificial layer and fills the plurality of first trenches.

[0051] like Figure 5, which is a schematic diagram of the formation state of the support layer 130 provided in an embodiment of the present invention. Specifically, a support layer 130 is deposited on the sacrificial layer 120, and the support layer 130 covers the entire sacrificial layer 120 and is filled into a plurality of first trenches 121. After the support layer 130 filled into the plurality of first trenches 121 is solidified, a support arm 131 is formed, and the support arm 131 is a "bridge" connecting the light-emitting chip 110 and the support layer 130, that is, one end of the support arm 131 is fixedly connected to the light-emitting chip 110, and the other end is fixedly connected to the support layer 130. Further, the material of the support layer 130 includes silicon oxide, that is, the material of the support layer 130 can be a single silicon oxide, or a mixture of silicon oxide and other materials, such as a mixture of silicon oxide and silicon nitride. If the material of the support layer 130 is a single silicon oxide, the thickness of the silicon oxide is preferably 3um-10um. Preferably, the thickness of the support layer 130 needs to be greater than the thickness of the sacrificial layer 120 . The reason for this setting is that after the sacrificial layer 120 is removed, the support layer 130 can better support and stabilize the light emitting chip 110 .

[0052] S150, peeling off the substrate.

[0053] like Figure 6 FIG. 1 is a schematic diagram of a substrate 100 after being peeled off according to an embodiment of the present invention. Specifically, the substrate 100 is removed by laser peeling.

[0054] S160, removing the sacrificial layer to form a weakened structure.

[0055] like Figure 7 As shown, it is a schematic diagram of a state of removing the sacrificial layer 120 provided by an embodiment of the present invention. Specifically, dilute hydrochloric acid is used to remove the metal Ga remaining on the substrate 100 after stripping, and the sacrificial layer 120 is removed simultaneously. Since the material of the sacrificial layer 120 is metal aluminum, it will react with the dilute hydrochloric acid to be removed, but the metal electrode of the light-emitting chip 110 uses a precious metal such as platinum or gold, which will not react with the dilute hydrochloric acid. Therefore, in the process of removing the sacrificial layer 120, there will be no adverse effect on the light-emitting chip 110 itself. After the sacrificial layer 120 is removed, only the support layer 130 is left to suspend the light-emitting chip 110 through the support arm 131, that is, a weakened structure is formed. Since in the weakened structure, the light-emitting chip 110 is connected to the support layer 130 only through a plurality of support arms 131, and its contact area with the support layer 130 is small, it is easy to peel off in the subsequent transfer process, and the transfer efficiency is higher.

[0056] As another embodiment, after forming a supporting layer on the sacrificial layer in step S140, wherein the supporting layer covers the entire sacrificial layer and fills the plurality of first trenches, and before peeling off the substrate in step S150, Figure 8As shown, the following steps are also included:

[0057] S210, etching a side of the support layer away from the sacrificial layer to form a plurality of second channels.

[0058] like Fig. 9 , which is a schematic diagram of forming the second channel 132 provided by an embodiment of the present invention. Specifically, after forming the support layer 130, a side of the support layer 130 away from the sacrificial layer 120 is etched to form a plurality of second channels 132, and the number, depth and width of the second channels 132 are not limited.

[0059] S220, forming a flexible substrate layer on the support layer, wherein the flexible substrate layer covers the entire support layer and fills the plurality of second channels.

[0060] like Fig.10 , which is a schematic diagram of the formation of the flexible substrate layer 140 provided in an embodiment of the present invention. Specifically, a flexible substrate layer 140 is formed on the support layer 130, and the flexible substrate layer 140 covers the entire support layer 130 and is filled with a plurality of second trenches 132. Since a plurality of second trenches 132 are formed by etching on one side of the support layer 130 in S210, when the flexible substrate layer 140 is formed, the flexible substrate layer 140 will be filled with a plurality of second trenches 132, so that the connection between the flexible substrate layer 140 and the support layer 130 is more firmly established. Furthermore, the material of the flexible substrate layer 140 includes metallic copper, that is, the flexible substrate layer 140 can be selected from a single metallic copper, or a mixture containing copper and other materials, but the property of acid corrosion resistance must be met. If the flexible substrate layer 140 is a single metallic copper, the thickness of the metallic copper is preferably 30um-150um. The reason why a flexible substrate layer 140 is further provided on one side of the support layer 130 is that the flexible substrate layer 140 is flexible and can provide a certain buffer during the weakened structure transfer process to reduce the influence of stress on the light emitting chip 110 .

[0061] S230, polishing a side of the flexible substrate layer away from the support layer, so that the side of the flexible substrate layer away from the support layer becomes flat.

[0062] like Fig.11 , which is a schematic diagram of processing the flexible substrate layer 140 provided by an embodiment of the present invention. Specifically, since the surface of the flexible substrate layer 140 is uneven when it is formed by evaporation, when the weakened structure is transferred, the height difference will affect the transfer yield of the light emitting chip 110 to a certain extent. Therefore, polishing is required to grind the uneven part of the flexible substrate layer 140 flat.

[0063] Afterwards, if Fig.12 As shown, the substrate 100 is then peeled off. Fig.13 As shown, the sacrificial layer 120 is removed to form a weakened structure. Fig.13 The weakened structure shown is similar to Figure 7 The weakened structure shown is different only in that Fig.13 The weakened structure shown is provided with an additional flexible substrate layer 140. By providing the flexible substrate layer 140, the flexible substrate layer 140 can relieve the stress on some light-emitting chips 110 during the subsequent mass transfer pressing and picking process of the light-emitting chips 110, thereby improving the transfer yield.

[0064] Please refer to Figure 7 or Fig.13 , is a schematic diagram of a weakening structure provided by an embodiment of the present invention, the weakening structure comprising:

[0065] A plurality of light emitting chips 110;

[0066] The support layer 130 is disposed above the plurality of light emitting chips 110;

[0067] A plurality of support arms 131 are formed by filling a support layer 130 into a plurality of first channels 121 in a sacrificial layer 120 and solidifying the support arms 131. After the sacrificial layer 120 is removed, the plurality of support arms 131 are respectively connected to a portion of the surface of each light-emitting chip 110 and are suspended below the support layer 130 at a certain distance.

[0068] The weakened structure also includes:

[0069] The flexible substrate layer 140 is provided with a plurality of second trenches 132 on one side of the support layer 130 away from the light emitting chip 110. The flexible substrate layer 140 is provided on the support layer 130 and filled into the second trenches 132. Since the flexible substrate layer 140 has a certain flexibility, the force applied when pressing and picking up the light emitting chip 110 can be reduced to a certain extent during the mass transfer process, thereby improving the transfer yield.

[0070] Furthermore, in the weakened structure, the material of the flexible substrate layer 140 can be selected as metal copper, and the material of the support layer 130 can be selected as silicon oxide.

[0071] Please refer to Fig.14 , is a flow chart of a mass transfer method provided by an embodiment of the present invention. The method includes:

[0072] S310, providing a transfer carrier having an adhesive layer.

[0073] like Fig.15 , which is a schematic structural diagram of a transfer carrier 150 provided in an embodiment of the present invention, wherein an adhesive layer 151 is coated on the transfer carrier 150 .

[0074] S320, aligning and fitting the side of the transfer carrier provided with the adhesive layer with any one of the weakened structures, and under the action of force, the support arm of the weakened structure breaks to transfer the light-emitting chip to the transfer carrier.

[0075] like Fig.16 , which is a schematic diagram of the transfer process provided by an embodiment of the present invention. Specifically, the side of the transfer carrier 150 provided with the adhesive layer 151 is aligned and fitted with the weakened structure, and under the bonding force, the support arm 131 of the weakened structure is broken, and the flexible substrate layer 140 and the support layer 130 are torn off, and the light emitting chip 110 is successfully transferred to the transfer carrier 150.

[0076] Furthermore, in order to be processed into a display terminal, the light-emitting chip 110 needs to be transferred to the final driving backplane through van der Waals force or laser transfer, and then go through processes such as die bonding, reflow soldering, and packaging to form the final display panel. This solution does not limit the subsequent processing flow.

[0077] In summary, the embodiments of the present invention provide a method for manufacturing a weakened structure, a weakened structure and a mass transfer method, and the method for manufacturing the weakened structure includes: providing a substrate carrying multiple light-emitting chips, forming a sacrificial layer on one side of the substrate carrying multiple light-emitting chips, and the thickness of the sacrificial layer is greater than the height of any light-emitting chip; then etching the sacrificial layer to form multiple first grooves to expose a portion of the surface of each light-emitting chip, and then continuing to form a support layer, the support layer covers the entire sacrificial layer and fills the multiple first grooves; finally, peeling off the substrate, and then removing the sacrificial layer, and the support layer filled in the multiple first grooves forms a support arm to suspend each light-emitting chip under the support layer to form a weakened structure that is easy to transfer. Alternatively, after forming the support layer, the side of the support layer away from the sacrificial layer is further etched to form multiple second grooves, and then a flexible substrate layer is further formed, the flexible substrate layer covers the entire support layer and fills the multiple second grooves, and then the substrate peeling and sacrificial layer removal operations are performed to obtain another weakened structure. Due to the setting of the flexible substrate layer, this weakened structure can better alleviate the stress on the light-emitting chip caused by the force during the mass transfer process, and can better improve the mass transfer yield.

[0078] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0079] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention. It should be noted that similar numbers and letters represent similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.

[0080] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A method for manufacturing a weakened structure, characterized in that: The method comprises: Providing a substrate carrying a plurality of light-emitting chips; forming a sacrificial layer on one side of the substrate carrying the plurality of light-emitting chips, wherein the thickness of the sacrificial layer is greater than the height of any one of the light-emitting chips; Etching the sacrificial layer to form a plurality of first trenches to expose a portion of the surface of each of the light-emitting chips; forming a supporting layer on the sacrificial layer, wherein the supporting layer covers the entire sacrificial layer and fills the plurality of first trenches; peeling off the substrate; The sacrificial layer is removed to form a weakened structure.

2. The method for manufacturing a weakened structure according to claim 1, characterized in that: After forming a supporting layer on the sacrificial layer, the supporting layer covers the entire sacrificial layer and is filled into the plurality of first trenches, the method further comprises the following steps: Etching a side of the support layer away from the sacrificial layer to form a plurality of second channels; A flexible substrate layer is formed on the support layer, wherein the flexible substrate layer covers the entire support layer and fills the plurality of second channels.

3. The method for manufacturing a weakened structure according to claim 2, characterized in that: After forming a flexible substrate layer on the support layer, the method further comprises the steps of: The side of the flexible substrate layer away from the support layer is polished so that the side of the flexible substrate layer away from the support layer becomes flat.

4. The method for manufacturing a weakened structure according to any one of claims 1 to 3, characterized in that: The material of the sacrificial layer includes metal aluminum, and the material of the supporting layer includes silicon oxide.

5. The method for manufacturing a weakened structure according to any one of claims 2 or 3, characterized in that: The material of the flexible substrate layer includes metal copper.

6. A weakening structure, characterized in that: The weakening structure is manufactured by the manufacturing method of the weakening structure according to any one of claims 1 to 5, and the weakening structure comprises: Multiple light-emitting chips; A supporting layer, disposed above the plurality of light-emitting chips; A plurality of support arms are formed by solidifying the support layer after the support layer is filled into the plurality of first grooves in the sacrificial layer, and after the sacrificial layer is removed, the plurality of support arms are respectively connected to a portion of the surface of each of the light-emitting chips to be suspended below the support layer.

7. The weakening structure according to claim 6, characterized in that: The weakening structure further comprises a flexible substrate layer. A plurality of second trenches are arranged on a side of the support layer away from the light-emitting chip. The flexible substrate layer is entirely arranged on the support layer and filled into the second trenches.

8. The weakening structure according to claim 7, characterized in that: The material of the flexible substrate layer includes metal copper.

9. The weakening structure according to any one of claims 6 to 8, characterized in that: The material of the sacrificial layer includes metal aluminum, and the material of the supporting layer includes silicon oxide.

10. A method for mass transfer, characterized in that: The method comprises: Providing a transfer carrier plate provided with an adhesive layer; The side of the transfer carrier provided with the adhesive layer is aligned and fitted with the weakened structure as described in any one of claims 6 to 9. Under the action of force, the support arm of the weakened structure breaks to transfer the light-emitting chip to the transfer carrier.

Images