Multi-die wafer sawing method

Abstract

The wafer slicing method of the present application allows multiple wafers to be placed on the wafer support table at a time, and the direction of the first cutting path of each wafer is determined through visual recognition. The direction of the first cutting path of the wafer is adjusted to be parallel to the X-axis direction through rotation of the wafer support table. After the first cutting path of the wafer is parallel to the X-axis direction, the first center coordinates of the wafer are quickly determined by manually finding the coordinates of the endpoints of the diameter of the wafer in the X-axis direction. The starting point, ending point or cutting length of each first cutting path of the wafer is determined based on the first center coordinates, and the cutting mechanism is controlled to cut. After the first cutting path is cut, the second center coordinates of the wafer after rotation are determined based on the first center coordinates, the self-rotation angle of the wafer support table and the axis of the wafer support table. The starting point, ending point or cutting length of each second cutting path of the wafer is determined based on the second center coordinates, and the cutting mechanism is controlled to cut. The slicing of one of the multiple wafers on the wafer support table is effectively realized. By repeating the above steps, the slicing of the other wafers on the wafer support table can be performed in sequence. The frequency of movement of the wafer support table is reduced, the energy consumption is reduced, the slicing efficiency is improved, and the slicing requirements of multiple small wafers are effectively met.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor device processing, in particular to a multi-wafer dicing method. BACKGROUND

[0002] In wafer processing, a wafer is cut into small devices using a dicing machine.

[0003] The patent document with the application publication number CN115464791A discloses a commonly used dicing machine. When dicing, the conventional dicing machine places a wafer concentrically on a wafer support table, then determines whether the X-direction cutting path of the wafer on the wafer support table is parallel to the X-axis direction through a visual detection device. If not, the wafer support table is rotated to adjust the X-direction cutting path of the wafer to be parallel to the X-axis direction. According to the distance from the center of the wafer to each cutting path of the wafer, the X-direction cutting path is cut. After the X-direction cutting path is cut, the wafer support table rotates the wafer by 90°, and then the Y-direction cutting path is cut.

[0004] This method can only process one wafer at a time, the processing efficiency is low, and multiple wafers of small size cannot be processed. SUMMARY

[0005] The purpose of the present application is to solve the above-mentioned problems existing in the prior art, and to provide a multi-wafer dicing method.

[0006] The purpose of the present application is achieved by the following technical solutions:

[0007] The multi-wafer dicing method comprises the following steps:

[0008] S1, after a plurality of wafers are distributed around the axis of the wafer support table on the wafer support table, the wafer support table adsorbs and fixes the wafers through vacuum adsorption;

[0009] S2, after the wafer support table moves to a cutting path direction identification position, the visual identification device collects an image of a wafer on the wafer support table to determine whether a first cutting path on the wafer is parallel to the X-direction. If not, S3 is executed. If yes, S4 is executed.

[0010] S3, then according to the included angle between the first cutting path and the X-direction, the wafer support table is controlled to rotate to make the first cutting path on the wafer parallel to the X-direction, and then S4 is executed.

[0011] S4, the visual identification device is manually controlled to find one end of the diameter extending along the X-axis direction on the wafer and determine the coordinates of one end of the diameter extending along the X-axis direction on the wafer.

[0012] S5, according to the determined coordinates of one end of the diameter extending along the X-axis direction on the wafer, the first center coordinates of the wafer are determined.

[0013] S6, determining the start point and the length or end point of each first cutting path of the wafer according to the first center coordinate of the wafer and the radius of the wafer, and controlling the cutting mechanism and the driving mechanism driving the wafer carrier to cut each first cutting path in turn according to the determined start point and the length or end point of each first cutting path;

[0014] S7, after the cutting of all the first cutting paths of the wafer is completed, rotating the wafer carrier by 90° and then determining the second center coordinate of the wafer again;

[0015] S8, determining the start point and the length or end point of each second cutting path of the wafer according to the second center coordinate of the wafer and the radius of the wafer, and controlling the cutting mechanism and the driving mechanism driving the wafer carrier to cut each second cutting path in turn according to the determined start point and the length or end point of each second cutting path;

[0016] S9, after the cutting of one wafer is completed, repeating the steps S2-S8 to cut other wafers on the wafer carrier in turn.

[0017] Preferably, four wafers are placed on the wafer carrier in equal circumferential positions.

[0018] Preferably, the coordinates of two points on a first cutting path on the wafer are determined by a visual recognition device, and whether the first cutting path is parallel to the X-axis direction and the included angle between the first cutting path and the X-axis direction are determined according to the coordinates of the two points on the first cutting path.

[0019] Preferably, in the S3, the slope of the straight line equation corresponding to the first cutting path is determined according to the coordinates of the two points on the first cutting path, and the rotation direction of the wafer carrier is determined according to the slope of the straight line equation corresponding to the first cutting path.

[0020] Preferably, in the S4, the driving mechanism is manually controlled to drive the visual recognition device to move along the X-axis direction and the Y-axis direction so that the lens optical axis of the visual recognition device coincides with one end of the diameter of the wafer extending along the X-axis direction, and the coordinates of any point on the lens optical axis at this time are determined as the coordinates of the one end of the diameter of the wafer extending along the X-axis direction.

[0021] Preferably, in the S5, the first center coordinate of the wafer is determined according to the coordinates of the one end of the diameter of the wafer extending along the X-axis direction and the radius of the wafer.

[0022] Preferably, in the S6, the starting point and the ending point of a first cutting path are determined according to the following steps: a standard equation of the outer circumference of the wafer is determined according to the first center coordinates and the radius of the wafer, and two solutions obtained by substituting the Y coordinate of any point on the first cutting path into the standard equation are taken as the starting point and the ending point of the first cutting path.

[0023] Preferably, in the S6, the cutting length of a first cutting path is determined according to the following formula:

[0024]

[0025] wherein, L 切 is the cutting length of a first cutting path; r is the radius of the wafer, and y is the distance from the center of the wafer to the first cutting path.

[0026] Preferably, in the S7, the second center coordinates of the wafer are determined according to the following formula:

[0027]

[0028] wherein, X2 is the X coordinate of the second center coordinates; X1 is the X coordinate of the first center coordinates; a is the included angle between the first cutting path and the X direction; S is the distance between the center of the wafer and the axis of the wafer support; Y2 is the Y coordinate of the second center coordinates, and Y1 is the Y coordinate of the first center coordinates.

[0029] Preferably, after the cutting of a wafer is completed, the wafer support is reversely rotated to complete the included angle between the first cutting path of the wafer that has been cut and the X axis direction before the cutting of the next wafer is performed.

[0030] The advantages of the technical scheme of the present application mainly include:

[0031] The method of the present application places multiple wafers evenly distributed around the axis of the wafer supporting table on the wafer supporting table at one time, determines the direction of the first cutting path of each wafer through visual recognition, adjusts the direction of the first cutting path of the wafer to be parallel to the X-axis direction through rotation of the wafer supporting table, after the first cutting path of the wafer is parallel to the X-axis direction, the first center coordinates of the wafer can be quickly determined by manually finding the coordinates of the endpoints of the diameter of the X-axis direction of the wafer, and the starting point, ending point or cutting length of each first cutting path of the wafer is determined accordingly, so as to control the cutting mechanism to cut, after the first cutting path is cut, the second center coordinates of the wafer after rotation can be determined according to the first center coordinates, the self-rotation angle of the wafer supporting table and the axis of the wafer supporting table, and the starting point, ending point or cutting length of each second cutting path of the wafer is determined based on the second center coordinates, so as to control the cutting mechanism to cut, effectively realizing the cutting of one of the multiple wafers on the wafer supporting table, and repeating the above steps can sequentially cut the other wafers on the wafer supporting table, which can reduce the moving frequency of the wafer supporting table, is conducive to reducing energy consumption, improving cutting efficiency and effectively meeting the multiple cutting requirements of small wafers.

[0032] The present application places four wafers on the wafer supporting table in equal circumferential distribution, which can effectively rotate another wafer into the observation range of the visual recognition device after each 90° self-rotation of the wafer supporting table, thereby facilitating the adjustment of the wafer supporting table. BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1 is a schematic diagram of the cutting machine of the present application;

[0034] Figure 2 is a flowchart of the multiple wafer cutting method of the present application;

[0035] Figure 3 is a schematic diagram of the present application in which four wafers are placed on the wafer supporting table in equal circumferential distribution or approximately equal circumferential distribution, and two points on the first cutting path of the first wafer are identified by the visual recognition device;

[0036] Figure 4 is a schematic diagram of the present application in which the first cutting path of the first wafer is adjusted to be parallel to the X-axis direction;

[0037] Figure 5 is a schematic diagram of the present application in which the second center coordinates of the first wafer are determined, in which the left point-dashed circle represents the position of the first wafer before the self-rotation of the wafer supporting table, and the lower solid circle represents the position of the first wafer after the 90° counterclockwise self-rotation of the wafer supporting table. DETAILED DESCRIPTION

[0038] The objects, advantages and features of the present application will be illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are only typical examples of the application, and any technical solution formed by equivalent replacement or equivalent transformation falls within the scope of the present application.

[0039] In the description of the scheme, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "back", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of description and simplification of description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third" are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0040] Embodiment 1

[0041] The multi-wafer dicing method disclosed in the present application will be described below in conjunction with the drawings. The multi-wafer dicing method is based on a dicing machine, and like the existing dicing machine, as shown in the accompanying Figure 1 The dicing machine includes a wafer holding table 100, a driving mechanism 200 for driving the wafer holding table 100 to translate, and a wafer dicing mechanism 300. The driving mechanism 200 drives the wafer holding table 100 to move horizontally along the X-axis direction, and its specific structure is the same as that of the prior art, which will not be described here. The wafer dicing mechanism 300 includes a main shaft and a cutter driven to rotate by the main shaft driving assembly. The axis of the cutter is parallel to the axis of the rotating shaft, and the main shaft is driven by the main shaft driving assembly to translate along the axis of the main shaft. The axis of the main shaft is defined as the Y-axis direction, which is perpendicular to the X-axis direction. At the same time, the dicing machine also includes a visual recognition device 500 connected to a driving mechanism 600 for driving it to move along the X-axis and Y-axis directions. The visual recognition device 500 can be a known microscope camera, and the driving mechanism 600, for example, is two vertically connected servo modules. The specific structure is known technology, which will not be described here. In order to facilitate the determination of the position coordinates, a plane coordinate system can be constructed with the X-axis direction as the X-axis, the Y-axis direction as the Y-axis, and the center of the wafer holding table's table surface as the origin 0.

[0042] As shown in the accompanying Figure 2 The multi-wafer dicing method includes the following steps:

[0043] S1, when the wafer holding table 100 is located at the loading and unloading position, the multi-wafer 700 is distributed around the axis of the wafer holding table 100 on the wafer holding table 100, and then the wafer holding table 100 is fixed by vacuum suction; preferably, as shown in the accompanyingFigure 3 As shown, four wafers 700 are manually placed on the wafer stage 100 in a manner that is either evenly or approximately evenly divided around the circumference. When placing the wafers manually, the first dicing ridge of each wafer is made to be parallel to the X-axis direction as much as possible. When the wafer stage 100 is moved to the dicing ridge direction identification position, the first wafer 701 on it is within the observation range of the visual recognition device 500.

[0044] S2, after the wafer stage 100 moves to the dicing direction identification position, the visual recognition device 500 acquires an image of the first wafer 701 on the wafer stage 100 that is within its observation range (here, the observation range refers to the range that the visual recognition device can move to and acquire images) to determine whether the first dicing track 710 on the first wafer 701 is parallel to the X direction. If not, proceed to S3; if yes, proceed to S4.

[0045] For details, see attached. Figure 3 As shown, the visual recognition device 500 determines the coordinates of two points on a first dicing 710 on the first wafer 701. For example, the driving mechanism 600 can be manually controlled to move the visual recognition device 500 so that the intersection of the crosshairs in the viewfinder of the visual recognition device 500 is located at the first point on the first dicing 710. The X and Y coordinates of any point on the optical axis of the lens of the visual recognition device 500 at this time are recorded as the coordinates of the first point on the first dicing 710. Then, the driving mechanism 600 is controlled to move the visual recognition device 500 so that the intersection of the crosshairs in the viewfinder of the visual recognition device 500 is located at the second point on the first dicing 710, and any X and Y coordinates on the optical axis of the lens of the visual recognition device 500 at this time are recorded as the coordinates of the second point on the first dicing 710.

[0046] Next, the slope of the straight line equation corresponding to the first cutting track 710 can be determined based on the coordinates of two points on the first cutting track 710. Then, based on the slope of the straight line equation corresponding to the first cutting track 710 and the slope of the X-axis, it can be determined whether the first cutting track 710 is parallel to the X-direction. Specifically, if it is determined that the slope of the straight line equation corresponding to the first cutting track 710 is the same as or the difference is within a set range, it can be determined that the first cutting track 710 is parallel to the X-axis; conversely, if it is determined that the slope of the straight line equation corresponding to the first cutting track 710 is different from or the difference is not within a set range, it can be determined that the first cutting track 710 is not parallel to the X-axis.

[0047] Of course, it can also be determined whether the first cutting path 710 is parallel to the X axis according to the Y coordinates of two points on the first cutting path 710, for example, when it is determined that the Y coordinates of two points on the first cutting path 710 obtained are the same or the difference is within a set range, it can be determined that the first cutting path 710 is parallel to the X axis, on the contrary, when it is determined that the Y coordinates of two points on the first cutting path 710 obtained are different or the difference exceeds the set range, it can be determined that the first cutting path 710 is not parallel to the X axis.

[0048] Of course, when it is observed that the intersection of the cross lines in the viewfinder of the visual recognition device 500 is located on the first cutting path, the visual recognition device 500 can be translated by a certain distance and the intersection of the cross lines in the viewfinder is observed again to determine whether it is on the first cutting path, if yes, it is determined that the first cutting path is parallel to the X axis direction.

[0049] Of course, in another embodiment, the driving mechanism 600 can also be controlled by a program to automatically control the movement of the visual recognition device 500, and when determining the coordinates of the first point on a first cutting path 710, it is determined by image analysis whether the center of the image collected by the visual recognition device 500 at a position is on the first cutting path 710, if yes, the coordinates of any point on the lens optical axis of the visual recognition device 500 at this time can be recorded as the coordinates of the first point on the first cutting path 710, if not, the visual recognition device 500 can be adjusted to collect images again and determine whether the center of the collected image is on the first cutting path 710, repeat the above steps until the center of the image collected by the visual recognition device 500 at a position is on the first cutting path 710. Then, the visual recognition device 500 can be translated by a certain distance along the X axis direction and collect images again, if it is determined that the center of the image collected at this time is on the first cutting path 710, it can be determined that the first cutting path 710 is parallel to the X axis direction, on the contrary, if it is determined that the center of the image is not on the first cutting path, it can be determined that the first cutting path 710 is not parallel to the X axis. And at this time, the position of the visual recognition device 500 can be adjusted according to the image center and the position of the first cutting path on the image so that the center of the image collected by the visual recognition device 500 after adjusting the position is located on the first cutting path, thereby the coordinates of the second point on the first cutting path can be obtained.

[0050] S3, then the chuck table 100 is controlled to rotate according to the included angle between the first scribe line 710 and the X direction so that the first scribe line 710 on the first wafer 701 is parallel to the X direction, and then S4 is performed. Specifically, the included angle between the first scribe line 710 and the X direction can be determined according to the slope of the straight line equation corresponding to the first scribe line 710 and the slope of the X axis. For example, if the included angle a between the first scribe line 710 and the X direction is 5°, then the chuck table 100 is controlled to rotate 5°. The specific rotation direction of the chuck table 100 can be determined according to the slope of the straight line equation corresponding to the first scribe line 710. For example, as shown in FIG. 7B, if the slope of the straight line equation corresponding to the first scribe line 710 is positive, then the chuck table 100 is controlled to rotate clockwise along the rotation direction F so that the first scribe line 710 on the wafer on the chuck table is parallel to the X axis, as shown in FIG. 7C. When the slope of the straight line equation corresponding to the first scribe line 710 is negative, then the chuck table 100 is controlled to rotate counterclockwise. Figure 3 Figure 4

[0051] S4, the visual recognition device 500 is manually controlled to find one end of the diameter 730 extending along the X axis direction on the first wafer 701 and determine the coordinates of the one end of the diameter 730 extending along the X axis direction on the first wafer 701. Specifically, the driving mechanism 600 is manually controlled to drive the visual recognition device 500 to move along the X axis direction and the Y axis direction so that the lens optical axis of the visual recognition device 500 coincides with the one end of the diameter 730 extending along the X axis direction on the first wafer 701, and the coordinates of any point on the lens optical axis at this time are determined as the coordinates of the one end of the diameter 730 extending along the X axis direction on the first wafer 701. When determining whether the lens optical axis of the visual recognition device 500 coincides with the one end of the diameter 730 extending along the X axis direction on the first wafer 701, the observer observes whether the intersection of the cross lines in the viewfinder frame of the visual recognition device 500 coincides with the one end of the diameter 730 extending along the X axis direction on the first wafer 701. If so, it is determined that the lens optical axis of the visual recognition device 500 coincides with the one end of the diameter 730 extending along the X axis direction on the first wafer 701, as shown in FIG. 8B. Figure 4

[0052] ​​​S5, determining the first center coordinate of the first wafer 701 according to the coordinate of one end of the diameter 730 of the first wafer 701 extending along the X-axis direction; specifically, determining the first center coordinate of the first wafer 701 according to the coordinate of one end of the diameter 730 of the first wafer 701 extending along the X-axis direction and the radius of the first wafer 701. For example, the coordinate of one end of the diameter 730 of the first wafer 701 extending along the X-axis direction is the coordinate of the left end of the diameter 730 of the first wafer 701 extending along the X-axis direction (X 端 , Y 端 ), at this time, the first center coordinate (X 端 1, Y 端 ) of the first wafer 701 can be determined according to the radius r of the first wafer 701.

[0053] S6, determining the starting point and the length or the ending point of each first cutting path 710 of the first wafer 701 according to the first center coordinate of the first wafer 701 and the radius of the first wafer 701, and controlling the cutting mechanism to cut each first cutting path 710 in turn according to the determined starting point and the length or the ending point of each first cutting path 710.

[0054] The starting point and the ending point of a first cutting path 710 are determined as follows: the standard equation of the outer circumference of the first wafer 701 is determined according to the first center coordinate and the radius of the first wafer 701, two solutions obtained by substituting the Y coordinate of any point on the first cutting path 710 into the standard equation are taken as the starting point and the ending point of the first cutting path 710, and any one of the two solutions can be selected as the starting point.

[0055] When the length of each first cutting path 710 needs to be determined, as shown in FIG. 6, the length of a first cutting path 710 is determined according to the following formula: Figure 4

[0056]

[0057] wherein L 切 is the length of a first cutting path 710; r is the radius of the first wafer 701, and y is the distance between the center of the first wafer 701 and the first cutting path 710, the distance between the center of the first wafer 701 and each cutting path is a predetermined value, which can be determined in advance and stored in the memory, and can be directly called in subsequent calculation.

[0058] ​Furthermore, during the cutting of each first cutting track, the position of the cutting blade of the cutting mechanism is adjusted according to the Y coordinate of the starting point of each first cutting track 710, and the position of the receiving platform is adjusted according to the X coordinate of the starting point of each first cutting track so that the cutting point of the cutting blade is located at the starting point of the first cutting track. The receiving platform is then controlled to translate according to the ending point or cutting length of the first cutting track to achieve the cutting of the first cutting track.

[0059] S7, after completing the cutting of the first dicing track 710, the wafer stage 100 rotates 90° and then re-determines the second center coordinates of the first wafer 701; after the wafer stage 100 rotates 90°, the second dicing track 720 of the first wafer 701 rotates to extend along the X-axis direction, at which point the second dicing track 720 can be cut by the cutter of the cutting mechanism. Since the center position of the first wafer 701 changes after the wafer stage 100 rotates, it is necessary to determine the center coordinates of the first wafer 701 after rotation, i.e., the second center coordinates.

[0060] For details, see attached. Figure 5 As shown, the coordinates of the second center of the first wafer 701 are determined according to the following formula:

[0061]

[0062] Where X2 is the X-coordinate of the second center coordinate; X1 is the X-coordinate of the first center coordinate; a is the angle between the first dicing 710 and the X direction; S is the distance between the center of the first wafer 701 and the axis of the wafer support stage 100. When the wafer support stage 100 is positioned in the dicing direction, the X and Y coordinates of any point on its axis are known. Therefore, the distance between the center of the first wafer 701 and the axis of the wafer support stage 100 can be calculated based on the determined first center coordinate and the X and Y coordinates of any point on its axis when the wafer support stage 100 is positioned in the dicing direction. Y2 is the Y-coordinate of the second center coordinate, and Y1 is the Y-coordinate of the first center coordinate.

[0063] When determining X2 and Y2, whether to use a plus or minus sign depends on the wafer's position before and after the stage rotates 90°. For example, during the first dicing of the wafer, if the wafer is to the left of the stage, and after the stage rotates 90°, the wafer is to the right of the wafer before the stage rotates, then a plus sign can be used to calculate the second center coordinates. Conversely, if the wafer after the stage rotates is to the left of the wafer before the stage rotates, then a minus sign can be used to calculate the second center coordinates.

[0064] S8, according to the second center coordinates of the first wafer 701 and the radius of the first wafer 701, the start point and the length or end point of each second cutting path 720 of the first wafer 701 are determined, and the cutting mechanism is controlled to cooperate with the driving mechanism to cut each second cutting path 720 in sequence according to the determined start point and the length or end point of each second cutting path 720. The determination method of the start point and the length or end point of each second cutting path and the cutting method are the same as those of the first cutting path, which will not be repeated here.

[0065] S9, after the cutting of a first wafer 701 is completed, the steps of S2-S8 are repeated to sequentially complete the cutting of other wafers 700 on the wafer support table 100.

[0066] That is, in S7, after the wafer support table 100 is rotated by 90°, the second wafer 702 is rotated into the recognition range of the visual recognition device 500, so that the second wafer 702 is cut according to the steps of S2-S8. Then, the third wafer 703 is cut according to the steps of S2-S8. Finally, the fourth wafer 704 is cut according to the steps of S2-S8. After the cutting of the fourth wafer 704 is completed, the wafer support table 100 moves back to the loading and unloading position for unloading and reloading.

[0067] Further, after the cutting of a wafer is completed, the wafer support table is reversely rotated to complete the angle between the first cutting path 710 of the cut wafer and the X-axis direction before the next wafer is cut. For example, when the angle between the first cutting path 710 of the first wafer and the X-axis is determined to be 5° and the wafer is adjusted in a clockwise direction, the wafer support table is reversely rotated by 5° in a counterclockwise direction after the cutting of the first wafer is completed. This is because the first cutting path 710 of other wafers on the wafer support table may be parallel to the X-axis direction or the Y-axis direction at the beginning, and the wafer support table does not need to be rotated for direction adjustment. Therefore, after the cutting of a wafer is completed, the first cutting path 710 of the cut wafer is reversely rotated to complete the angle with the X-axis direction, so that the first cutting path 710 of the next wafer can be restored to a state parallel to the X-axis direction or the Y-axis direction.

[0068] The present application has various embodiments, and all technical solutions formed by equivalent transformation or equivalent transformation fall within the protection scope of the present application.

Claims

1. A method for dicing multiple wafers, characterized in that, Includes the following steps: S1, after multiple wafers are distributed on the wafer support platform around the axis of the wafer support platform, the wafer support platform adsorbs and fixes the wafers by vacuum adsorption. S2, after the wafer stage moves to the dicing direction identification position, an image of a wafer on the wafer stage is acquired by a vision recognition device to determine whether the first dicing track on the wafer is parallel to the X direction. If not, proceed to S3; if yes, proceed to S4. S3, then control the wafer support stage to rotate according to the angle between the first dicing track and the X direction so that the first dicing track on the wafer is parallel to the X direction, and then execute S4; S4, the visual recognition device is manually controlled to find one end of the diameter extending along the X-axis direction on the wafer and determine the coordinates of the one end of the diameter extending along the X-axis direction on the wafer; S5, determine the coordinates of the first center of the wafer based on the coordinates of one end of the diameter extending along the X-axis direction of the wafer; S6. Determine the starting point and length or end point of each first dicing track of the wafer based on the first center coordinates and the radius of the wafer, and control the cutting mechanism to cooperate with the driving mechanism that drives the wafer stage to translate according to the determined starting point and length or end point of each first dicing track to cut each first dicing track in sequence. S7, after all the first dicing channels of the wafer are cut, the wafer stage rotates 90° and then determines the second center coordinates of the wafer again; S8. Based on the second center coordinates of the wafer and the radius of the wafer, determine the starting point and length or end point of each second dicing track of the wafer, and control the cutting mechanism to cooperate with the driving mechanism that drives the wafer stage to translate according to the determined starting point and length or end point of each second dicing track to cut each second dicing track in sequence. S9. After completing the dicing of one wafer, repeat steps S2-S8 to dicing other wafers on the wafer carrier in sequence. In step S6, the starting point and ending point of a first dicing tract are determined according to the following steps: the standard equation of the outer circumference of the wafer is determined based on the coordinates of the first center and the radius of the wafer; and the two solutions obtained by substituting the Y coordinate of any point on the first dicing tract into the standard equation are used as the starting point and ending point of the first dicing tract. In step S7, the coordinates of the second center of the wafer are determined according to the following formula: Wherein, X2 is the X coordinate of the second center coordinate; X1 is the X coordinate of the first center coordinate; a is the angle between the first dicing ridge and the X direction; S is the distance between the center of the wafer and the axis of the wafer support stage; Y2 is the Y coordinate of the second center coordinate, and Y1 is the Y coordinate of the first center coordinate.

2. The multi-wafer dicing method according to claim 1, characterized in that: Four wafers are placed evenly in a circle on the wafer support platform.

3. The multi-wafer dicing method according to claim 1, characterized in that: The coordinates of two points on a first dicing track on the wafer are determined by a visual recognition device. Based on the coordinates of the two points on the first dicing track, it is determined whether the first dicing track is parallel to the X-axis direction and the angle between the first dicing track and the X-axis direction.

4. The multi-wafer dicing method according to claim 3, characterized in that: In step S3, the slope of the straight line equation corresponding to the first cutting track is determined based on the coordinates of two points on the first cutting track, and the rotation direction of the receiving stage is determined based on the slope of the straight line equation corresponding to the first cutting track.

5. The multi-wafer dicing method according to claim 1, characterized in that: In step S4, the manual control drive mechanism drives the visual recognition device to move along the X-axis and Y-axis directions so that the optical axis of the lens of the visual recognition device coincides with one end of the diameter of the wafer extending along the X-axis direction. The coordinates of any point on the optical axis of the lens at this time are determined as the coordinates of one end of the diameter of the wafer extending along the X-axis direction.

6. The multi-wafer dicing method according to claim 1, characterized in that: In step S5, the coordinates of the first center of the wafer are determined based on the coordinates of one end of the diameter extending along the X-axis and the radius of the wafer.

7. The multi-wafer dicing method according to claim 1, characterized in that: In step S6, the cutting length of a first cutting path is determined according to the following formula: Among them, L 切 y is the cutting length of the first kerf; r is the radius of the wafer; and y is the distance from the center of the wafer to the first kerf.

8. The multi-wafer dicing method according to any one of claims 1-7, characterized in that: After one wafer is cut, before the next wafer is cut, the wafer stage is rotated in the opposite direction to complete the angle between the first kerf and the X-axis of the wafer being cut.

Images