Semiconductor laser light beam collimation quality detection device and detection method

Abstract

The invention discloses a semiconductor laser light beam collimation quality detection device and detection method, and relates to the technical field of laser detection. The device comprises a loading subassembly, a near-field detection subassembly and a far-field detection subassembly. The object carrying subassembly comprises an object carrying table used for bearing the laser chip to be detected. The near-field detection subassembly comprises a near-field industrial camera located on the light emitting side of the laser chip, and a beam splitter prism is arranged on the side, facing the laser chip, of the near-field industrial camera. The far-field detection subassembly comprises a far-field industrial camera. A near-field industrial camera and a far-field industrial camera are used for receiving a near-field light spot and a far-field light spot of a light beam respectively, centroid coordinates (Xa, Za) and (Xb, Zb) of the near-field light spot and the far-field light spot are calculated, if Xa-Xb is smaller than delta x, slow collimation of the light beam is qualified, and if Za-Zb is smaller than delta z, fast axis collimation of the light beam is qualified. The device and the detection method are simple in operation and high in efficiency, and can ensure the measurement precision of the mass center position of the light spot.

Description

Technical Field

[0001] The invention relates to the technical field of laser detection, in particular to a semiconductor laser beam collimation quality detection device and a detection method. Background Art

[0002] The steps of semiconductor laser beam collimation include fast axis collimation and slow axis collimation, which respectively determine the vertical and horizontal positions of the beam center of mass. It is necessary to evaluate the effect of beam collimation, and it is particularly important to determine the rationality of the method for determining the quality of beam collimation.

[0003] The existing method for determining the effect of beam collimation is to use a light screen to obtain the near-field light spot and the far-field light spot respectively, and use a ruler to measure whether their centroid positions are within the allowable range. This method is difficult to operate, inefficient, and has poor accuracy in measuring the centroid position of the light spot. It is only suitable for situations where the beam collimation quality requirements are not high. It is not applicable to high-integration semiconductor laser packaging with high beam collimation quality. Summary of the invention

[0004] In response to the above problems, the present application provides a semiconductor laser beam collimation quality detection device and detection method which are simple to operate, highly efficient, and can ensure the measurement accuracy of the spot centroid position, and are suitable for situations where high beam collimation quality requirements are required.

[0005] The technical solution adopted by the present invention to solve the technical problem is:

[0006] A semiconductor laser beam collimation quality detection device comprises a workbench, wherein the workbench is provided with a loading assembly, a near-field detection assembly and a far-field detection assembly;

[0007] The object carrier assembly includes an object carrier for supporting the laser chip to be tested;

[0008] The near-field detection device comprises a near-field industrial camera located on the light-emitting side of the laser chip, and a beam splitter prism is provided on the side of the near-field industrial camera facing the laser chip;

[0009] The far-field detection assembly includes a far-field industrial camera;

[0010] After the beam emitted by the laser chip passes through the beam splitter prism, a part of it passes through the beam splitter prism to form a near-field light spot on the target surface of the near-field industrial camera; the other part is reflected by the beam splitter prism to form a far-field light spot on the target surface of the far-field industrial camera.

[0011] Furthermore, the loading device also includes a driving unit, the driving unit includes a longitudinal driving component extending in the front-to-back direction, a vertical driving component is arranged on the moving end of the longitudinal driving component, and the vertical driving component can move in the front-to-back direction under the drive of the longitudinal driving component, and the loading platform is arranged at the moving end of the vertical driving component, and the loading platform can move in the vertical direction under the drive of the vertical driving component.

[0012] Furthermore, the near-field detection device further comprises a first mounting seat, a first slide and a first mounting frame, the first slide is connected to the first mounting seat via a first linear slide, the first mounting frame is slidably connected to the first slide via a second linear slide, and the near-field industrial camera is arranged on the first mounting frame;

[0013] The far-field detection component also includes a second mounting seat, a second slide and a second mounting frame. The second slide is slidably connected to the second mounting seat via a third linear slide. The second mounting frame is slidably connected to the second slide via a fourth linear slide. The far-field industrial camera is fixedly mounted on the second mounting frame in a detachable manner.

[0014] Furthermore, it also includes a power-on component, which includes a third mounting seat, a third slide is arranged on the third mounting seat, a driving member for driving the third slide to move up and down is arranged between the third slide and the third mounting seat, and a power-on probe is arranged on the third slide.

[0015] Furthermore, the third mounting seat is connected to the workbench via a fifth linear slide, and the sliding direction of the third mounting seat is parallel to the light emitting direction of the laser chip.

[0016] Furthermore, it also includes a periscope, which is used to change the propagation path of the beam emitted by the laser chip, so that the beam emitted by the laser chip can pass through the top of the laser housing.

[0017] Furthermore, the periscope is mounted on the third slide frame via a third mounting frame.

[0018] Further, the third mounting frame includes a first adjustment component arranged on the third slide frame, the first adjustment component includes a first fixed block and a first movable block slidably arranged on the first fixed block, the sliding direction of the first movable block is parallel to the light emitting direction of the laser chip, the first fixed block is provided with a first adjustment rod for adjusting the position of the first movable block, the first movable block is provided with a first connecting frame, the first connecting frame is provided with a second adjustment component, the second adjustment component includes a second fixed block and a second movable block slidably arranged on the second fixed block, the sliding direction of the second movable block is a vertical direction, the second fixed block is provided with a second adjustment rod for adjusting the position of the second movable block, the second movable block is provided with a second connecting frame, and the second connecting frame is provided with a periscope.

[0019] Furthermore, the reflection and transmission ratio of the beam splitter prism is 1:1, and the optical path ratio of the near-field industrial camera and the far-field industrial camera is 1:3.

[0020] A method for detecting the alignment quality of a semiconductor laser beam comprises the following steps:

[0021] S1, optical path calibration;

[0022] 1.1 Place the laser on the stage;

[0023] 1.2 Adjust the position of the stage and the powered probe, and align the positive and negative poles of the powered probe with the positive and negative poles of the laser chip of the first channel of the laser;

[0024] 1.3 Adjust the height of the periscope so that the center of the incident surface of the periscope is on the same axis as the center of the light-emitting surface of the laser chip of the first channel of the laser. Adjust the position of the light-incoming surface of the periscope so that the periscope is on the side of the slow-axis collimator that faces away from the fast-axis collimator.

[0025] 1.4 Adjust the position of the near-field industrial camera so that the center of the target surface of the near-field industrial camera and the center of the periscope light-emitting surface are on the same axis;

[0026] 1.5 Adjust the position of the far-field industrial camera so that the center of the target surface of the far-field industrial camera and the center of the reflected light output surface of the beam splitter prism are on the same axis;

[0027] S2, set the number of laser chips of the laser to N (N≥1), set the channel number n=1 (1≤n≤N), the slow axis collimation error to δx, and the fast axis collimation error to δz;

[0028] S3, the powered probe is lifted and aligned with the laser chip of the current channel;

[0029] S3, the powered probe falls and the power is turned on;

[0030] S4, the near-field industrial camera obtains the coordinates of the center of mass of the light beam (Xan, Zan), and the far-field industrial camera obtains the coordinates of the center of mass of the light beam (Xbn, Zbn);

[0031] If |Xan-Xbn|<δx, it means that the slow axis collimation of the beam is qualified, otherwise it is judged as unqualified;

[0032] If |Zan-Zbn|<δz, it means that the fast axis collimation of the beam is qualified, otherwise it is judged as unqualified;

[0033] S4, rewrite the current channel number to n=n+1, and determine whether n is equal to the number of laser chips N;

[0034] If n=N, all channels are tested, the powered probe is lifted, and the test ends;

[0035] If n≠N, return to step S3 to perform next channel detection.

[0036] The beneficial effects of the present invention are:

[0037] The semiconductor laser beam collimation quality detection device and detection method provided in the embodiment of the present application respectively receive the near-field spot and the far-field spot of the light beam through a near-field industrial camera and a far-field industrial camera, and calculate the centroid coordinates (Xa, Za) of the near-field spot and the centroid coordinates (Xb, Zb) of the far-field spot, where X represents the slow axis direction coordinate of the spot, and Z represents the fast axis direction coordinate. If |Xa-Xb|<δx, it means that the slow collimation of the light beam is qualified, and if |Za-Zb|<δz, it means that the fast axis collimation of the light beam is qualified. This method can detect the collimation effect of the semiconductor laser beam, which is used to evaluate its collimation quality and provide a basis for subsequent optimization and improvement. In addition, the detection by a semiconductor laser beam collimation quality detection device provided in the embodiment of the present application is not only simple to operate, but also can effectively improve the detection efficiency, and can ensure the measurement accuracy of the centroid position of the light spot, which is suitable for situations where the beam collimation quality requirements are high. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 A schematic diagram of the three-dimensional structure of a semiconductor laser beam collimation quality detection device provided in an embodiment of the present application;

[0039] Figure 2 for Figure 1 A schematic diagram of the enlarged structure of part A;

[0040] Figure 3 A top view of a semiconductor laser beam collimation quality detection device provided in an embodiment of the present application;

[0041] Figure 4 It is a schematic diagram of the three-dimensional structure of the cargo-carrying part;

[0042] Figure 5 This is a top view of the cargo-carrying part;

[0043] Figure 6 for Figure 5 AA section view in;

[0044] Figure 7 Schematic diagram of the three-dimensional structure of the vertical drive component Figure 1 ;

[0045] Figure 8 Schematic diagram of the three-dimensional structure of the vertical drive component Figure 2 ;

[0046] Fig. 9 This is a schematic diagram of the three-dimensional structure of the far-field detection unit;

[0047] Fig.10 It is a schematic diagram of the three-dimensional structure of the near-field detection device;

[0048] Fig.11 This is a schematic diagram of the three-dimensional structure of the power-on unit;

[0049] Fig.12 This is a partial cross-sectional view of the upper power supply unit;

[0050] Fig.13 This is a schematic diagram of the installation structure of the periscope;

[0051] Fig.14 Schematic diagram of the internal structure of the laser;

[0052] Fig.15 This is a schematic diagram of optical path calibration;

[0053] Fig.16 This is the optical path relationship diagram of the near-field industrial camera and the far-field industrial camera;

[0054] Fig.17 A detection flow chart of a semiconductor laser beam collimation quality detection method provided in an embodiment of the present application.

[0055] In the figure: 1. Workbench;

[0056] 2. Loading assembly; 21. Loading platform; 211. Fins; 221. First chassis; 222. Driving block; 223. First lead screw; 224. Longitudinal drive motor; 225. Connecting plate; 23. Vertical drive component; 2311. Bottom plate; 2312. Vertical plate; 2313. Connecting block; 2321. Top plate; 2322. First vertical plate; 2323. Second vertical plate; 2331. Guide rail; 2332. Sliding block; 2341. Second lead screw; 2342. Screw nut; 2343. Vertical drive motor; 2344. Transmission mechanism;

[0057] 3. Near-field detection assembly; 31. Near-field industrial camera; 32. First mounting seat; 33. First slide; 34. First linear slide; 35. First mounting frame; 36. Second linear slide; 37. Beam splitter; 38. Bracket;

[0058] 4. Far-field detection assembly; 41. Far-field industrial camera; 42. Second mounting seat; 43. Second slide; 44. Third linear slide; 45. Second mounting frame; 46. Fourth linear slide;

[0059] 5. Install the power part; 51. The third mounting seat; 52. The third slide; 521. The power probe; 53. The cylinder; 54. The periscope; 55. The third mounting frame; 551. The first adjustment assembly; 5511. The first fixed block; 5512. The first moving block; 5513. The first adjustment rod; 5514. The first tightening screw; 552. The first connecting frame; 553. The second adjustment assembly; 5531. The second fixed block; 5532. The second moving block; 5533. The second adjustment rod; 5534. The second tightening screw; 554. The second connecting frame; 555. The mirror frame; 5551. The plug-in block; 5552. The splint; 5553. The connecting rib plate; 56. The fifth linear slide; 561. The electric push rod; 6. The laser; 61. The laser chip; 62. The fast-axis collimator; 63. The slow-axis collimator. DETAILED DESCRIPTION

[0060] In order to enable those skilled in the art to better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be described in detail below in conjunction with the drawings in the embodiments of the present application, and the described embodiments are only part of the embodiments of the present application, not all of the embodiments. All other embodiments obtained by those skilled in the art without creative work on the basis of the embodiments of the present application shall belong to the protection scope of the present application.

[0061] For the convenience of description, the coordinate system is defined as Figure 1 As shown, the left-right direction is the horizontal direction, the front-back direction is the longitudinal direction, and the up-down direction is the vertical direction.

[0062] like Figure 1 and Figure 3 As shown, a semiconductor laser beam alignment quality detection device comprises a workbench 1, on which a loading component 2, a near-field detection component 3, a far-field detection component 4 and a power-on component 5 are arranged.

[0063] The object carrier assembly 2 includes an object carrier 21 for supporting the laser chip 61 to be detected and a driving unit for driving the object carrier 21 to move in a vertical plane.

[0064] As a specific implementation, the stage 21 described in this embodiment can move in a vertical plane extending in the longitudinal direction. The driving unit includes a longitudinal driving component extending in the front-to-back direction, and a vertical driving component 23 is provided on the moving end of the longitudinal driving component. The vertical driving component 23 can move in the front-to-back direction driven by the longitudinal driving component. The stage 21 is horizontally arranged and fixedly connected to the moving end of the vertical driving component 23 in a detachable manner. The stage 21 can move in the vertical direction driven by the vertical driving component 23.

[0065] For example, Figure 4 , Figure 5 and Figure 6 As shown, the longitudinal drive component adopts a linear module. The longitudinal drive component includes a first chassis 221 extending in the longitudinal direction, the first chassis 221 is fixedly connected to the workbench 1 in a detachable manner, and a driving block 222 that can move forward and backward relative to the first chassis 221 is slidably arranged on the first chassis 221. A first lead screw 223 is arranged on the driving block 222, and the first lead screw 223 is threadedly connected to the driving block 222, and the two ends of the first lead screw 223 are rotatably connected to the first chassis 221 through bearing assemblies. A longitudinal drive motor 224 is arranged at one end of the first chassis 221, and the power output shaft of the longitudinal drive motor 224 is connected to the first lead screw 223.

[0066] For example, Figure 6 , Figure 7 and Figure 8As shown, the vertical driving component 23 includes a second base frame and a lifting frame that can move up and down relative to the second base frame, and the loading platform 21 is fixedly arranged on the top plate 2321 of the lifting frame in a detachable manner. The second base frame includes a bottom plate 2311 and a vertical plate 2312 arranged on the bottom plate 2311, and the bottom plate 2311 is fixedly connected to the connecting plate 225 arranged on the driving block 222 in a detachable manner. The lifting frame includes a top plate 2321 located above the vertical plate 2312, a first vertical plate 2322 extending downward perpendicularly to the top plate 2321 is provided on the lower side of the top plate 2321 and located on one side of the vertical plate 2312, and the first vertical plate 2322 is slidably connected to the vertical plate 2312 through a guide rail 2331 and a slider 2332, and a second vertical plate 2323 extending downward perpendicularly to the top plate 2321 is provided on the lower side of the top plate 2321 and located on the other side of the vertical plate 2312. A second lead screw 2341 extending in the vertical direction is provided on one side of the vertical plate 2312 facing the second vertical plate 2323, and the second lead screw 2341 is rotatably connected to the connecting block 2313 provided on the vertical plate 2312 through a bearing assembly, and a screw nut 2342 matching the second lead screw 2341 is provided on the second vertical plate 2323. A vertical drive motor 2343 is provided on the bottom plate 2311 on the side of the second vertical plate 2323 facing away from the vertical plate 2312. The power output shaft of the vertical drive motor 2343 faces downward and is connected to the lower end of the second screw 2341 through a transmission mechanism 2344. An avoidance slot hole for accommodating the transmission mechanism 2344 is provided on the bottom plate 2311.

[0067] Exemplarily, the transmission mechanism 2344 adopts synchronous belt drive, including a driving pulley arranged on the power output shaft of the vertical drive motor 2343, a driven pulley arranged on the lower end of the second screw 2341 and a synchronous belt for connecting the driving pulley and the driven pulley.

[0068] Furthermore, if Figure 8 As shown, the second vertical plate 2323 includes a belly and wings located at both ends of the belly, and the belly and wings together form a U-shaped structure with an opening toward the side of the vertical plate 2312. Two protrusions are arranged on the side of the vertical plate 2312 facing the second vertical plate 2323, and the two protrusions are located between the two wings of the second vertical plate 2323, and the second vertical plate 2323 and the vertical plate 2312 form a plug-in structure.

[0069] Furthermore, the loading platform 21 is made of a material with good thermal conductivity, and fins 211 are respectively provided on the lower side of the loading platform 21 on both sides of the lifting frame.

[0070] The near-field detection assembly 3 includes a near-field industrial camera 31, which is located on the light-emitting side of the laser chip 61, and the lens of the near-field industrial camera 31 faces the laser chip 61. A beam splitter prism 37 is provided on the side of the lens of the near-field industrial camera 31 facing the laser chip 61, and the light-incoming surface of the beam splitter prism 37 is parallel to the target surface of the near-field industrial camera 31, and the centers of the two are on the same axis.

[0071] The far-field detection assembly 4 includes a far-field industrial camera 41 , which is located on the light-emitting side of the beam splitter prism 37 , and a lens of the far-field industrial camera 41 faces the light-emitting side of the beam splitter prism 37 .

[0072] like Fig.16 As shown, after the beam beam emitted by the laser chip 61 passes through the beam splitter prism 37, a part of it passes through the beam splitter prism 37 and enters the near-field industrial camera 31, and forms a near-field light spot on the target surface of the near-field industrial camera 31; the other part is reflected by the beam splitter prism 37, emitted from the reflected light output surface of the beam splitter prism 37 and enters the far-field industrial camera 41, and forms a far-field light spot on the target surface of the far-field industrial camera 41.

[0073] As a specific implementation, in this embodiment, the reflection and transmission ratio of the beam splitter prism 37 is 1:1, and the optical path ratio of the near-field industrial camera 31 and the far-field industrial camera 41 is 1:3.

[0074] As a specific implementation manner, the light-incoming surface of the beam splitter prism 37 and the reflected light-emitting surface are perpendicular to each other, and the beam direction can be changed by 90° through the beam splitter prism 37 .

[0075] Furthermore, in order to facilitate adjustment, Fig.10 As shown, the near-field detection unit 3 also includes a first mounting seat 32, and the first mounting seat 32 is fixedly connected to the workbench 1 in a detachable manner. A first slide 33 is arranged on the first mounting seat 32, and the first slide 33 is connected to the first mounting seat 32 through a first linear slide 34. The first linear slide 34 can move the first slide 33 in a horizontal direction perpendicular to the light emitting direction of the laser chip 61, and adjust the position of the first slide 33. A first mounting frame 35 is arranged on the first slide 33, and the first mounting frame 35 is slidably connected to the first slide 33 through a second linear slide 36. The height position of the first mounting frame 35 can be adjusted through the second linear slide 36. The near-field industrial camera 31 is fixedly arranged on the first mounting frame 35 in a detachable manner.

[0076] As a specific implementation, in this embodiment, a bracket 38 is fixedly provided on the side of the near-field industrial camera 31 facing away from the far-field industrial camera 41 in a detachable manner, one end of the bracket 38 is fixedly connected to the housing of the near-field industrial camera 31 by a screw, and the other end of the bracket 38 extends to the side of the lens of the near-field industrial camera 31 facing the laser chip 61, and the dichroic prism 37 is fixedly provided on the bracket 38 in a detachable manner.

[0077] Furthermore, in order to facilitate adjustment, Fig. 9 As shown, the far-field detection unit 4 also includes a second mounting seat 42, and the second mounting seat 42 is fixedly connected to the workbench 1 in a detachable manner. A second slide 43 is provided on the second mounting seat 42, and the second slide 43 is slidably connected to the second mounting seat 42 through a third linear slide 44. The third linear slide 44 can move the second slide 43 in a horizontal direction perpendicular to the light emitting direction of the reflected light from the beam splitter prism 37, and adjust the position of the second slide 43. A second mounting frame 45 is provided on the second slide 43, and the second mounting frame 45 is slidably connected to the second slide 43 through a fourth linear slide 46. The height position of the second mounting frame 45 can be adjusted through the fourth linear slide 46. The far-field industrial camera 41 is fixedly provided on the second mounting frame 45 in a detachable manner.

[0078] like Fig.11 As shown, the power-on device 5 comprises a third mounting seat 51, on which a third slide 52 capable of sliding up and down relative to the third mounting seat 51 is disposed, and between the third slide 52 and the third mounting seat 51 is a driving member for driving the third slide 52 to move up and down. A power-on probe 521 is disposed on the third slide 52, and when the third slide 52 moves downward driven by the driving member and contacts the laser chip 61, the laser chip 61 is powered to emit a beam.

[0079] As a specific implementation, the third slide 52 described in this embodiment includes a vertical portion and a horizontal portion, the driving member is a cylinder 53 with a guide rod, the cylinder body of the cylinder 53 is detachably fixedly connected to the third mounting seat 51, and the rod end of the piston rod of the cylinder 53 is detachably fixedly connected to the vertical portion of the third slide 52. The horizontal portion of the third slide 52 extends perpendicularly to the vertical portion toward a side close to the laser chip 61, and the powered probe 521 is disposed at the suspended end of the horizontal portion and faces downward.

[0080] Furthermore, if Fig.11 , Fig.12 and Fig.15 As shown, a semiconductor laser beam collimation quality detection device also includes a periscope 54, which is used to change the propagation path of the beam emitted by the laser chip 61, so that the light beam emitted by the laser chip 61 after fast and slow axis collimation can pass completely from the top of the laser 6 shell through the periscope 54, avoiding the laser 6 shell from blocking the light beam.

[0081] By providing the periscope 54 , the laser 6 can be directly placed on the stage 21 , so that the laser chip 61 in the laser 6 can be detected.

[0082] As a specific implementation method, Fig.11 As shown, the periscope 54 described in this embodiment is installed on the third slide 52 of the upper electrical device 5 through the third mounting frame 55.

[0083] Furthermore, if Fig.11 and Fig.12 As shown, the third mounting frame 55 includes a first adjustment assembly 551 disposed on the horizontal portion of the third slide 52. The first adjustment assembly 551 includes a first fixed block 5511, on which a first moving block 5512 is slidably disposed, and the sliding direction of the first moving block 5512 is parallel to the light emitting direction of the laser chip 61. The first fixed block 5511 is provided with a first adjustment rod 5513, which is threadedly connected to the first moving block 5512 and rotatably connected to the first fixed block 5511, and the first fixed block 5511 is provided with a first tightening screw 5514 for tightening the first adjustment rod 5513. The first moving block 5512 is provided with a first connecting frame 552, and the first connecting frame 552 is provided with a second adjustment assembly 553. The second adjustment assembly 553 includes a second fixed block 5531, on which a second moving block 5532 is slidably arranged, and the sliding direction of the second moving block 5532 is the vertical direction. The second fixed block 5531 is provided with a second adjustment rod 5533, which is threadedly connected to the second moving block 5532 and rotatably connected to the second fixed block 5531, and the second fixed block 5531 is provided with a second tightening screw 5534 for tightening the second adjustment rod 5533. The second moving block 5532 is provided with a second connecting frame 554, and a periscope 54 is provided on the second connecting frame 554 on the side of the powered probe 521 facing away from the third mounting seat 51.

[0084] As a specific implementation, the periscope 54 in this embodiment is arranged on the second connecting frame 554 through a frame 555. Fig.13As shown, the mirror frame 555 includes a plug-in block 5551, and the second connecting frame 554 is provided with a plug-in hole for accommodating the plug-in block 5551. The plug-in block 5551 is inserted into the plug-in hole and fixedly connected to the second connecting frame 554 by a third tightening screw (not shown in the figure). Two clamping plates 5552 are provided at the lower end of the plug-in block 5551, and the periscope 54 is located between the two clamping plates 5552. A connecting rib plate 5553 is provided on one side of the periscope 54 between the two clamping plates 5552, and the connecting rib plate avoids the light inlet end and the light outlet end of the periscope 54. A fourth tightening screw (not shown in the figure) for tightening the periscope 54 is provided on one of the clamping plates 5552.

[0085] Furthermore, since some lasers 6 are provided with multiple rows of laser chips 61, in order to realize automatic and continuous detection, such as Figure 1 and Fig.11 As shown, a fifth linear slide 56 is provided between the third mounting seat 51 and the workbench 1, and the power member of the fifth linear slide 56 is an electric push rod 561. Driven by the fifth linear slide 56, the third mounting seat 51 can approach or move away from the laser chip 61 along the light emitting direction of the laser chip 61.

[0086] If the arrangement of the laser chip 61 in the laser 6 is as follows Fig.14 As shown, in the actual detection process, after the detection of one row of laser chips 61 is completed, the laser 6 needs to be turned 180°, and the positions of the upper power assembly 5 and the periscope 54 need to be adjusted again, and then another row of laser chips 61 can be detected. If multiple rows of laser chips 61 are arranged in the same direction, the upper power assembly 5 can be controlled by electric control to approach or move away from the laser chip 61 along the light emitting direction of the laser chip 61, and then the longitudinal driving component and the vertical driving component 23 are cooperated to perform automatic and continuous detection of the laser chips 61 of the entire laser 6.

[0087] A method for detecting the alignment quality of a semiconductor laser beam comprises the following steps:

[0088] S1, optical path calibration.

[0089] 1.1 Place the laser 6 on the stage 21.

[0090] 1.2 Position calibration of the powered probe 521. The cylinder 53 slowly drops down, and the position of the stage 21 is adjusted by the fifth linear slide 56, the longitudinal drive component and the vertical drive component 23, so that the positive and negative electrodes of the powered probe 521 are aligned with the positive and negative electrodes of the laser chip 61 of the first channel of the laser 6.

[0091] 1.3 Calibrate the position of the periscope 54. Turn the second adjustment rod 5533 to adjust the height of the periscope 54 so that the center of the incident surface of the periscope 54 and the center of the light-emitting surface of the laser chip 61 of the first channel of the laser 6 are on the same axis. Turn the first adjustment rod 5513 to adjust the position of the light-incoming surface of the periscope 54 so that it is on the side of the slow-axis collimator 63 that faces away from the fast-axis collimator 62. Ensure that the light beam after fast-slow axis collimation can pass completely over the laser 6 housing through the periscope 54.

[0092] 1.4 Calibration of the position of the near-field industrial camera 31. Turn the knobs of the first linear slide 34 and the second linear slide 36 respectively to make the center of the target surface of the near-field industrial camera 31 and the center of the light-emitting surface of the periscope 54 on the same axis.

[0093] 1.5 Calibration of the position of the far-field industrial camera 41. Turn the knobs of the third linear slide 44 and the fourth linear slide 46 respectively to make the center of the target surface of the far-field industrial camera 41 and the center of the reflected light exit surface of the beam splitter prism 37 on the same axis.

[0094] S2, setting the number of laser chips 61 of the laser 6 to N (N≥1), setting the channel number n=1 (1≤n≤N), setting the slow axis collimation error to δx, and setting the fast axis collimation error to δz.

[0095] S3 , the powered probe 521 is lifted, and through the fifth linear slide 56 , the longitudinal driving component and the vertical driving component 23 , the powered probe 521 is aligned with the laser chip 61 of the current channel.

[0096] S3, the power probe 521 falls and the power is turned on.

[0097] S4, the near-field industrial camera 31 obtains the coordinates of the center of mass of the light beam (Xan, Zan), and the far-field industrial camera 41 obtains the coordinates of the center of mass of the light beam (Xbn, Zbn).

[0098] If |Xan-Xbn|<δx, it means that the slow axis collimation of the light beam is qualified, otherwise it is judged as unqualified.

[0099] If |Zan-Zbn|<δz, it means that the fast axis collimation of the light beam is qualified, otherwise it is judged as unqualified.

[0100] S4, rewrite the current channel number to n=n+1, and determine whether n is equal to the number N of laser chips 61.

[0101] If n=N, all channels are tested, the power-on probe 521 is lifted, the stage 21 and the power-on device 5 return to their original positions, and the test is finished.

[0102] If n≠N, return to step S3 and perform next channel detection.

[0103] Other embodiments obtained by those skilled in the art by combining, splitting, reorganizing, etc. the embodiments of the present application on the basis of the embodiments provided in the present application do not exceed the protection scope of the present application.

[0104] The above specific implementation methods have detailed the purpose, technical solutions and beneficial effects of the embodiments of the present application. The above are only specific implementation methods of the embodiments of the present application and are not used to limit the protection scope of the embodiments of the present application. That is, any modifications, equivalent substitutions, improvements, etc. made on the basis of the embodiments of the present application should be included in the protection scope of the embodiments of the present application.

Claims

1. A semiconductor laser beam collimation quality detection device, characterized in that: It comprises a workbench (1), on which is arranged a loading unit (2), a near-field detection unit (3) and a far-field detection unit (4); The object carrier assembly (2) comprises an object carrier (21) for supporting the laser chip (61) to be detected; The near-field detection device (3) comprises a near-field industrial camera (31) located on the light-emitting side of the laser chip (61), and a beam splitting prism (37) is provided on the side of the near-field industrial camera (31) facing the laser chip (61); The far-field detection assembly (4) comprises a far-field industrial camera (41); After the beam beam emitted by the laser chip (61) passes through the beam splitter prism (37), a portion of the beam beam passes through the beam splitter prism (37) to form a near-field light spot on the target surface of the near-field industrial camera (31); the other portion of the beam beam passes through the beam splitter prism (37) to form a far-field light spot on the target surface of the far-field industrial camera (41).

2. A semiconductor laser beam collimation quality detection device according to claim 1, characterized in that: The object-carrying device (2) further comprises a driving unit, wherein the driving unit comprises a longitudinal driving component extending in the front-to-back direction, a vertical driving component (23) is arranged on the movable end of the longitudinal driving component, and the vertical driving component (23) can move in the front-to-back direction under the drive of the longitudinal driving component, and the object-carrying platform (21) is arranged at the movable end of the vertical driving component (23), and the object-carrying platform (21) can move in the vertical direction under the drive of the vertical driving component (23).

3. The semiconductor laser beam collimation quality detection device according to claim 1, characterized in that: The near-field detection device (3) further comprises a first mounting seat (32), a first slide (33) and a first mounting frame (35), wherein the first slide (33) is connected to the first mounting seat (32) via a first linear slide (34), and the first mounting frame (35) is slidably connected to the first slide (33) via a second linear slide (36), and the near-field industrial camera (31) is arranged on the first mounting frame (35); The far-field detection device (4) also includes a second mounting seat (42), a second slide (43) and a second mounting frame (45), wherein the second slide (43) is slidably connected to the second mounting seat (42) via a third linear slide (44), and the second mounting frame (45) is slidably connected to the second slide (43) via a fourth linear slide (46), and the far-field industrial camera (41) is fixedly arranged on the second mounting frame (45) in a detachable manner.

4. The semiconductor laser beam collimation quality detection device according to claim 1, characterized in that: The invention also comprises an electric component device (5), wherein the electric component device (5) comprises a third mounting seat (51), a third slide (52) is arranged on the third mounting seat (51), a driving member for driving the third slide (52) to move up and down is arranged between the third slide (52) and the third mounting seat (51), and a power-on probe (521) is arranged on the third slide (52).

5. The semiconductor laser beam alignment quality detection device according to claim 4, characterized in that: The third mounting seat (51) is connected to the workbench (1) via a fifth linear slide (56), and the sliding direction of the third mounting seat (51) is parallel to the light emitting direction of the laser chip (61).

6. The semiconductor laser beam alignment quality detection device according to claim 4, characterized in that: It also includes a periscope (54), which is used to change the propagation path of the beam emitted by the laser chip (61), so that the beam emitted by the laser chip (61) can pass from above the laser (6) housing.

7. A semiconductor laser beam collimation quality detection device according to claim 6, characterized in that: The periscope (54) is mounted on the third slide frame (52) via a third mounting frame (55).

8. The semiconductor laser beam collimation quality detection device according to claim 7, characterized in that: The third mounting frame (55) comprises a first adjusting component (551) arranged on the third sliding frame (52), the first adjusting component (551) comprises a first fixed block (5511) and a first moving block (5512) slidably arranged on the first fixed block (5511), the sliding direction of the first moving block (5512) is parallel to the light emitting direction of the laser chip (61), the first fixed block (5511) is provided with a first adjusting rod (5513) for adjusting the position of the first moving block (5512), the first moving block (5512) is provided with a first connecting frame (552), The first connecting frame (552) is provided with a second adjustment component (553), and the second adjustment component (553) includes a second fixed block (5531) and a second movable block (5532) slidably arranged on the second fixed block (5531), and the sliding direction of the second movable block (5532) is a vertical direction. The second fixed block (5531) is provided with a second adjustment rod (5533) for adjusting the position of the second movable block (5532), and the second movable block (5532) is provided with a second connecting frame (554), and the second connecting frame (554) is provided with a periscope (54).

9. The semiconductor laser beam collimation quality detection device according to claim 1, characterized in that: The reflection and transmission ratio of the beam splitter prism (37) is 1:1, and the optical path ratio of the near-field industrial camera (31) and the far-field industrial camera (41) is 1:

3.

10. A detection method for detecting the collimation quality of a semiconductor laser beam according to any one of claims 6 to 9, characterized in that: The following steps are included: S1, optical path calibration; 1.1 Place the laser (6) on the stage (21); 1.2 Adjust the positions of the stage (21) and the powered probe (521) so that the positive and negative electrodes of the powered probe (521) are aligned with the positive and negative electrodes of the laser chip (61) of the first channel of the laser (6); 1.3 Adjust the height of the periscope (54) so ​​that the center of the incident surface of the periscope (54) and the center of the light-emitting surface of the laser chip (61) of the first channel of the laser (6) are on the same axis, and adjust the position of the light-incoming surface of the periscope (54) so ​​that the periscope (54) is on the side of the slow-axis collimator (63) facing away from the fast-axis collimator (62); 1.4 Adjust the position of the near-field industrial camera (31) so that the center of the target surface of the near-field industrial camera (31) and the center of the light-emitting surface of the periscope (54) are on the same axis; 1.5 Adjust the position of the far-field industrial camera (41) so that the center of the target surface of the far-field industrial camera (41) and the center of the reflected light emitting surface of the beam splitter prism (37) are on the same axis; S2, setting the number of laser chips (61) of the laser (6) to N (N≥1), setting the channel number n=1 (1≤n≤N), the slow axis collimation error to δx, and the fast axis collimation error to δz; S3, the powered probe (521) is lifted and aligned with the laser chip (61) of the current channel; S3, the power probe (521) falls down and the power is turned on; S4, the near-field industrial camera (31) obtains the coordinates of the center of mass of the light beam (Xan, Zan), and the far-field industrial camera (41) obtains the coordinates of the center of mass of the light beam (Xbn, Zbn); If |Xan-Xbn|<δx, it means that the slow axis collimation of the beam is qualified, otherwise it is judged as unqualified; If |Zan-Zbn|<δz, it means that the fast axis collimation of the beam is qualified, otherwise it is judged as unqualified; S4, rewrite the current channel number to n=n+1, and determine whether n is equal to the number N of laser chips (61); If n=N, all channels are tested, the power probe (521) is lifted, and the test is finished; If n≠N, return to step S3 to perform next channel detection.

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