Acrylate photoresist with low refractive index and preparation method thereof

Abstract

The invention discloses a low-refractive-index acrylate photoresist and a preparation method thereof, and belongs to the technical field of photoresists. The acrylate photoresist comprises the following raw materials in parts by mass: 10-50 parts of a fluorine-containing acrylate polymer, 1-20 parts of a photosensitizer, 10-90 parts of an organic solvent and 0.001-1 part of a surfactant, wherein the raw materials of the fluorine-containing acrylate polymer comprise a fluorine-containing acrylic monomer, an alkali-soluble terminal acrylic monomer and an alkali-insoluble acrylic monomer. Due to the introduction of the fluorine-containing acrylic monomer, the obtained acrylate photoresist has excellent chemical resistance and hydrophobicity; due to the addition of fluorine atoms, the refractive index of the acrylate photoresist is greatly reduced; the obtained fluorine-containing acrylate polymer can significantly improve the sensitivity of an acrylate photoresist, can form a high-resolution pattern of only 10 [mu] m in a short time, and can be used as an excellent optical path medium in a micro-lens structure.

Description

Technical Field

[0001] The invention belongs to the technical field of photoresists, and in particular relates to a low-refractive-index acrylate photoresist and a preparation method thereof. Background Art

[0002] In recent years, new display technologies such as AMOLED (active matrix organic light-emitting diode) have developed rapidly, and high-performance materials with low power consumption, high brightness, bendability, and high resolution have been continuously developed. At the same time, the device structure of new displays has become more and more highly integrated. As one of the important components of new displays, the performance of microlenses has also received widespread attention. The structural material of the microlens needs to meet the requirements of low refractive index, high resolution, and good Taper angle, which is conducive to controlling defects such as broken wires.

[0003] Therefore, in order to obtain the microlenses with the above-mentioned properties, a photolithography process is often used in the preparation process of the microlenses. By selecting a suitable photoresist material and optimizing the process parameters, a microlens array with excellent optical properties can be prepared.

[0004] Photoresist is a light-sensitive mixed liquid composed of three main components: photosensitive resin, sensitizer and solvent. After being exposed to light, the photosensitive resin can quickly undergo a photocuring reaction in the exposed area, causing a significant change in the physical properties of the material. After appropriate solvent treatment, the desired image can be obtained. Due to these characteristics of photoresist, photoresist is also widely used in the manufacture of printed circuits and integrated circuits, as well as printing plate making processes.

[0005] Acrylate photoresist is a common type of photoresist. It has a simple process and easy to obtain raw materials, which can greatly save manufacturing costs. However, the refractive index of acrylate photoresist is mostly greater than 1.5. Its refractive index is too high to form a microlens structure. It can only be used as an ordinary graphic photoresist and cannot meet some new applications of photoresist.

[0006] In addition, in the preparation process of acrylate photoresist, due to the high alkaline solubility of acrylate precursors, the dissolution effect of common naphthoquinone diazide photosensitizers is low, so a complex pre-treatment process is required to solve this problem. At the same time, the overly hard skeleton structure of acrylate photoresist will cause residues in the development process and other difficult problems in adjusting the development characteristics.

[0007] Therefore, it is of great significance to prepare an acrylate photoresist with excellent performance, low refractive index, strong alkaline solution development characteristics, high resolution and high sensitivity. Summary of the invention

[0008] The object of the present invention is to provide a low-refractive-index acrylate photoresist and a preparation method thereof, so as to solve the problems of high refractive index, poor developing performance and low sensitivity of the acrylate photoresist.

[0009] The purpose of the present invention can be achieved through the following technical solutions:

[0010] In a first aspect, the present invention provides a low refractive index acrylate photoresist, comprising the following raw materials in parts by weight:

[0011] 10-50 parts of fluorine-containing acrylate polymer;

[0012] 1 to 20 parts of photosensitizer;

[0013] 10 to 90 parts of organic solvent;

[0014] Surfactant 0.001-1 part;

[0015] The raw materials of the fluorine-containing acrylic ester polymer include fluorine-containing acrylic monomers, alkali-soluble terminal acrylic monomers and alkali-insoluble acrylic monomers.

[0016] Preferably, the photosensitizer includes a combination of one or more of benzoin derivatives, benzil ketal derivatives, dialkoxyacetophenones, α-hydroxyalkyl phenones, α-aminoalkyl phenones, acylphosphine oxides, esterified oxime ketone compounds, aromatic peroxyester compounds, halogenated methyl aromatic ketones, organic sulfur-containing compounds and benzoylformate.

[0017] Preferably, the organic solvent includes one or more combinations of methyl methoxypropionate, methyl isobutyl ketone, methyl cellosolve, ethyl acetate, butyl acetate, ethyl cellosolve, diethylene glycol dimethyl ethyl ether, ethyl ethoxypropionate, ethyl lactate, propylene glycol methyl ether acetate, propylene glycol methyl ether, propylene glycol propyl ether, acetone, diethylene glycol ethyl acetate, diethylene glycol methyl acetate, diethylene glycol methyl ether, diethylene glycol ethyl ether, dipropylene glycol methyl ether, cyclohexanone, N-methyl-2-pyrrolidone, glycol dimethyl ether, tetrahydrofuran, toluene and xylene.

[0018] More preferably, the organic solvent includes one or more combinations of propylene glycol methyl ether acetate, propylene glycol methyl ether, propylene glycol propyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether, dipropylene glycol methyl ether and glyme.

[0019] Preferably, the surfactant is a nonionic surfactant and an organosilicon surfactant, or a combination of both.

[0020] Preferably, the nonionic surfactant includes a combination of one or more of polyoxyethylene lauryl ether, polyoxyethylene oleyl ether, polyoxyethylene cetyl ether, polyoxyethylene fatty acid diester, polyoxyethylene fatty acid monoester, 3-methyl-1-butyn-3-ol, polyethylene glycol phenyl octyl ether and nonylphenyl polyethylene glycol ether.

[0021] Preferably, the organosilicon surfactant includes a combination of one or more of hexamethyldisilazane, polydimethylsiloxane, BYK-348 surfactant and BYK-349 surfactant.

[0022] Preferably, the mass ratio of the fluorine-containing acrylic monomer, the alkali-soluble terminal acrylic monomer and the alkali-insoluble acrylic monomer is 1:(1.4-1.5):(1.1-1.2).

[0023] Preferably, the chemical formula of the fluorine-containing acrylic monomer is R1-CH=CH2, wherein R1 includes a combination of one or more of trifluoromethyl, difluoromethylene, fluoroalcohol, 2,2,3,3,4,4,5,5-octafluoropentyl, 2,2,3,3,4,4-hexafluorobutyl, 2,2,2-trifluoroethyl and a linear perfluoropolyether group having 1 to 10 carbon atoms.

[0024] Preferably, the chemical formula of the alkali-soluble terminal acrylic monomer is R2-CH=CH2, wherein R2 comprises a combination of one or more of free carboxylic acid, maleic anhydride, itaconic anhydride, succinic anhydride, phthalic anhydride, salicylic acid, phenol, thiol, hydroxyl, sulfonic acid group and protective alkali-soluble group.

[0025] More preferably, the protected alkali-soluble group includes a combination of one or more of a tert-butyloxycarbonyl group, a p-phenylene vinyl group and a p-acetoxyphenylene vinyl group protected by a carboxyl group or a phenol group.

[0026] Preferably, the chemical formula of the alkali-insoluble acrylic monomer is R3-CH=CH2, wherein R3 includes a combination of one or more of free hydrogen, a straight-chain alkyl group having 1 to 10 carbon atoms, a branched alkyl group having 1 to 10 carbon atoms, a phenyl group, a biphenyl group, a cyclohexyl group, a cyclohexylene group, oxyglycidol, an epoxycyclohexyl group, an oxetane group, an acryloxy group, a methacryloyloxy group, a vinyl group, and an alkoxy group having 1 to 10 carbon atoms.

[0027] Preferably, the weight average molecular weight of the fluorine-containing acrylate polymer is 1,000 to 100,000, the dispersity is 1.2 to 10, and the acid value is 10 to 500 KOHmg / g.

[0028] Preferably, the fluorinated acrylate polymer is prepared according to the following method:

[0029] Add fluorinated acrylic monomer, alkali-soluble terminal acrylic monomer, alkali-insoluble acrylic monomer and initiator to the solvent, mix well, adjust the solution temperature to 70-90°C, add a mixed solution of hydrochloric acid aqueous solution and ultrapure water dropwise, increase the temperature to 85-95°C, stir and react for 20-24 hours, and finally obtain a fluorinated acrylate polymer through phase separation and drying.

[0030] More preferably, the solvent includes a combination of one or more of propylene glycol methyl ether acetate, butyl acetate, toluene, xylene, acetone, cyclohexanone, isopropanol, butanol and ethyl acetate.

[0031] More preferably, the initiator includes a combination of one or more of dibenzoyl peroxide, tert-butyl perbenzoate and azobisisobutyronitrile.

[0032] In a second aspect, the present invention provides a method for preparing a low refractive index acrylate photoresist, which is prepared according to the following process steps:

[0033] In a yellow light dust-free environment, fluorine-containing acrylate polymer, photosensitizer and surfactant are weighed according to corresponding mass fractions and added to an organic solvent, mixed and dissolved, and filtered to obtain a low-refractive-index acrylate photoresist.

[0034] Preferably, a filter element with a pore size of 0.1 μm is used for filtration.

[0035] Beneficial effects of the present invention:

[0036] 1. The present invention newly synthesizes a fluorine-containing acrylate polymer, which is obtained by polymerizing three different acrylic monomers through a sol-gel method. The fluorine-containing acrylic monomer brings excellent chemical resistance and hydrophobicity to the acrylic photoresist. After the pattern is formed, the volume change in a 0.04% KOH alkaline solution at 40°C is less than 5%, and the volume change after immersion in pure water at room temperature for 72 hours is less than 2%. These properties enable the obtained fluorine-containing acrylate photoresist to have better pattern performance and adapt to different environmental requirements. In addition, since the fluorine atom has a large electronegativity, it can attract electron clouds, so that the electron density between molecules is reduced, resulting in a decrease in the refractive index of the obtained material. In addition, since the radius of the fluorine atom is small, it can be arranged more closely in the molecule, further reducing the scattering of light in the material. After the pattern is formed in the photolithography process, the average refractive index of the film layer is ≤1.45 in the wavelength range of 200 to 1000nm, which can be used as an excellent optical path medium in the microlens structure.

[0037] 2. The newly synthesized fluorinated acrylate polymer of the present invention also contains alkali-soluble terminal acrylic monomers and alkali-insoluble acrylic monomers, which are mainly used to achieve the photoresist development effect, and can improve the sensitivity of the acrylic ester photoresist, and can form a high-resolution pattern of only 10 μm in a short time. In addition, the alkali-soluble terminal acrylic monomer of the present invention can also select an acrylic monomer with a protective alkali-soluble group. Compared with the general alkali-soluble group, the protective alkali-soluble group has better chemical stability, can better withstand various chemical treatment conditions in the photolithography process, and helps to maintain the pattern quality. It can also improve the overall thermal stability of the material, improve the resolution and sensitivity of the photoresist, and have better performance.

[0038] 3. The photosensitizer with a non-naphthoquinonediazide compound microstructure used in the present invention can adapt to the photosensitization principle of the photoresist of the present invention on the one hand, and on the other hand, the photosensitizer provided by the present invention has a faster reaction speed, better absorption capacity for ultraviolet light with a longer wavelength, can work under a wider light source, and has better solubility, and can better adapt to the photoresist component of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The present invention will be further described below in conjunction with the accompanying drawings.

[0040] Figure 1 is a structural diagram of an organic electroluminescent display device applied to Embodiment 1 of the present invention;

[0041] Figure 2 is a scanning electron microscope photograph of the film pattern formed in Example 1 of the present invention;

[0042] Figure 3 It is a refractive index curve diagram of the film layer formed in Example 1 of the present invention within the wavelength range of 200 to 1000 nm.

[0043] Figure 1 In: 1. High refractive index filling glue; 2. Low refractive index acrylate photoresist; 3. Pattern definition photoresist; 4. Organic light-emitting material; 5. Packaging material; 6. Array substrate. DETAILED DESCRIPTION

[0044] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] Preparation Example

[0046] Preparation Example 1: A fluorinated acrylate polymer is prepared according to the following method:

[0047] Take 1 mol of p-styrene acrylate and dissolve it in toluene, add 1.05 mol of maleic anhydride, stir and mix evenly, raise the temperature to 60°C, stir and react for 4 hours, and then filter, concentrate and recrystallize to obtain carboxyl-protected p-styrene acrylate.

[0048] 25 g of trifluoroethyl acrylate, 36.25 g of carboxyl-protected styrene acrylate, 28.75 g of methacryloyloxyacrylate and 5 g of dibenzoyl peroxide were added to 300 g of propylene glycol methyl ether acetate, and the solution temperature was adjusted to 80° C. after mixing evenly, 100 g of a mixed solution of 40% by mass aqueous hydrochloric acid solution and ultrapure water (the mass ratio of the hydrochloric acid solution to the ultrapure water solution was 1:1) was added dropwise, the temperature was raised to 90° C., the reaction was stirred for 24 h, and finally a fluorinated acrylate polymer was obtained by phase separation and drying.

[0049] Preparation Example 2, a fluorine-containing acrylate polymer, is different from Preparation Example 1 only in that the carboxyl-protected p-styrene acrylate is replaced by an equal amount of maleic anhydride acrylate.

[0050] Preparation Example 3, a fluorine-containing acrylate polymer, is different from Preparation Example 1 only in that an equal amount of n-butyl acrylate is used to replace methacryloyloxy acrylate; and an equal amount of phenol-protected p-styrene acrylate is used to replace carboxyl-protected p-styrene acrylate.

[0051] Preparation Example 4, a fluorine-containing acrylate polymer, is different from Preparation Example 1 only in that the added amount of carboxyl-protected p-styrene acrylate is 35 g; the added amount of methacryloyloxyacrylate is 30 g.

[0052] Preparation Example 5, a fluorine-containing acrylate polymer, is different from Preparation Example 1 only in that the added amount of carboxyl-protected p-styrene acrylate is 37.5 g; the added amount of methacryloyloxyacrylate is 27.5 g.

[0053] Preparation Example 6, a fluorine-containing acrylate polymer, is different from Preparation Example 1 only in that the amount of trifluoroethyl acrylate added is 20 g.

[0054] Preparation Example 7, a fluorine-containing acrylate polymer, is different from Preparation Example 1 only in that the added amount of trifluoroethyl acrylate is 30 g.

[0055] Preparation Example 8, a fluorine-containing acrylate polymer, is different from Preparation Example 1 only in that the carboxyl-protected p-styrene acrylate is replaced by an equal amount of p-styrene acrylate.

[0056] Preparation Example 9, a fluorine-containing acrylate polymer, is different from Preparation Example 1 only in that trifluoroethyl acrylate is not added.

[0057] Example

[0058] Example 1, a low refractive index acrylate photoresist, is prepared according to the following method:

[0059] In a yellow light and dust-free environment, 100 g of the fluorinated acrylate polymer prepared in Preparation Example 1, 25 g of α-hydroxyalkyl phenone and 0.5 g of polyoxyethylene lauryl ether were weighed and added to 200 g of propylene glycol methyl ether acetate. After mixed and dissolved, the mixture was filtered through a filter element with a pore size of 0.1 μm to obtain a low refractive index acrylate photoresist.

[0060] Example 2, a low refractive index acrylate photoresist, is different from Example 1 only in that the added amount of the fluorine-containing acrylate polymer prepared in Preparation Example 1 is 50g; the added amount of α-hydroxyalkyl phenone is 10g; the added amount of propylene glycol methyl ether acetate is 150g; and the added amount of polyoxyethylene lauryl ether is 0.1g.

[0061] Example 3, a low refractive index acrylate photoresist, is different from Example 1 only in that the added amount of the fluorine-containing acrylate polymer prepared in Preparation Example 1 is 250 g; the added amount of α-hydroxyalkyl phenone is 100 g; the added amount of propylene glycol methyl ether acetate is 400 g; and the added amount of polyoxyethylene lauryl ether is 5 g.

[0062] Example 4 is a low refractive index acrylate photoresist, which is different from Example 1 only in that the fluorine-containing acrylate polymer prepared in Preparation Example 1 is replaced by an equal amount of the fluorine-containing acrylate polymer prepared in Preparation Example 2.

[0063] Example 5, a low refractive index acrylate photoresist, is different from Example 1 only in that the fluorine-containing acrylate polymer prepared in Preparation Example 1 is replaced by an equal amount of the fluorine-containing acrylate polymer prepared in Preparation Example 3.

[0064] Example 6, a low refractive index acrylate photoresist, is different from Example 1 only in that the fluorine-containing acrylate polymer prepared in Preparation Example 1 is replaced by an equal amount of the fluorine-containing acrylate polymer prepared in Preparation Example 4.

[0065] Example 7, a low refractive index acrylate photoresist, is different from Example 1 only in that the fluorine-containing acrylate polymer prepared in Preparation Example 1 is replaced by an equal amount of the fluorine-containing acrylate polymer prepared in Preparation Example 5.

[0066] Example 8, a low refractive index acrylate photoresist, is different from Example 1 only in that the fluorine-containing acrylate polymer prepared in Preparation Example 1 is replaced by an equal amount of the fluorine-containing acrylate polymer prepared in Preparation Example 6.

[0067] Example 9, a low refractive index acrylate photoresist, is different from Example 1 only in that the fluorine-containing acrylate polymer prepared in Preparation Example 1 is replaced by an equal amount of the fluorine-containing acrylate polymer prepared in Preparation Example 7.

[0068] Example 10 is a low refractive index acrylate photoresist, which is different from Example 1 only in that an equal amount of naphthoquinone diazide-5-sulfonyl nitride is used to replace α-hydroxyalkyl phenone.

[0069] Comparative Example

[0070] Comparative Example 1 is a low refractive index acrylate photoresist, which is different from Example 1 only in that the fluorine-containing acrylate polymer prepared in Preparation Example 1 is replaced by an equal amount of the fluorine-containing acrylate polymer prepared in Preparation Example 8.

[0071] Comparative Example 2 is a low refractive index acrylate photoresist, which is different from Example 1 only in that the fluorine-containing acrylate polymer prepared in Preparation Example 1 is replaced by an equal amount of the fluorine-containing acrylate polymer prepared in Preparation Example 9.

[0072] Comparative Example 3, a low refractive index acrylate photoresist, is different from Example 1 only in that the added amount of the fluorine-containing acrylate polymer prepared in Preparation Example 1 is 25 g.

[0073] Comparative Example 4 is a low refractive index acrylate photoresist, which is different from Example 1 only in that the amount of the fluorine-containing acrylate polymer prepared in Preparation Example 1 added is 300 g; the amount of propylene glycol methyl ether acetate added is 450 g.

[0074] Comparative Example 5 is a low refractive index acrylate photoresist, which is different from Example 1 only in that the added amount of α-hydroxyalkyl phenone is 2.5 g.

[0075] Comparative Example 6 is a low refractive index acrylate photoresist, which is different from Example 1 only in that the added amount of α-hydroxyalkyl phenone is 100 g; the added amount of propylene glycol methyl ether acetate is 250 g.

[0076] Comparative Example 7 is a low refractive index acrylate photoresist, which is different from Example 1 only in that the fluorine-containing acrylate polymer prepared in Preparation Example 1 is replaced by an equal amount of phenylsiloxane resin.

[0077] Comparative Example 8 is a low refractive index acrylate photoresist, which is different from Example 1 only in that the fluorine-containing acrylate polymer prepared in Preparation Example 1 is replaced by an equal amount of tert-butyl acrylate.

[0078] Performance testing:

[0079] Sample preparation:

[0080] (1) On a silicon wafer, the low-refractive-index acrylate photoresist obtained in the embodiment and the comparative example was spin-coated at a speed of 800 rpm to form a film, and then vacuum-dried at 200 Pa, followed by a pre-baking process, baking on a hot plate at 85° C. for 120 seconds, and measuring the film thickness using an ellipsometer;

[0081] (2) Using a 10μm line width mask, irradiate with 90mJ / cm2 on a proximity exposure machine 2 After the UV lamp source was applied, the substrate was developed in an organic base solution of 2.38% tetramethylammonium hydroxide (TMAH) for 75 seconds and washed with ultrapure water. The post-baking process was then performed, and the obtained pattern substrate was baked in an oven at 85°C for 30 minutes, and the film thickness was measured using an ellipsometer.

[0082] Performance Testing:

[0083] (1) Pattern performance: The silicon wafer with the pattern formed is observed by scanning electron microscope. If there is no abnormality such as residue in the 10μm pattern, the pattern is judged to be excellent; otherwise, it is judged to be poor.

[0084] (2) Residual film rate performance: calculated according to the following formula:

[0085]

[0086] (3) Refractive index performance: The refractive index of the film layer after the post-baking process (200-1000 nm band) was measured using an ellipsometer, and the average value was recorded.

[0087] (4) Chemical resistance evaluation: After the post-baking process, the pattern substrate was immersed in 0.045% KOH at 40°C for 10 minutes, and the film thickness expansion change rate was calculated. If the change rate was less than 5%, it was judged as excellent, otherwise it was judged as poor.

[0088] (5) Hydrophobicity evaluation: After the post-baking process, the pattern substrate was immersed in distilled water at 23°C for 72 hours, and the film thickness expansion change rate was calculated. If the change rate was less than 2%, it was judged as excellent, otherwise it was judged as poor.

[0089] The above test results are shown in Table 1:

[0090] Table 1 Performance test results

[0091]

[0092]

[0093] According to Table 1, in combination with Example 1 and Comparative Example 2, it can be seen that various properties of Comparative Example 2 have decreased, especially the refractive index has been significantly improved, indicating that the lack of fluorine segments in the acrylate will lead to a significant decrease in the refractive index of the obtained photoresist, and will also affect the chemical resistance and hydrophobicity of the material, which is not conducive to new applications of photoresists.

[0094] In combination with Example 1, Comparative Example 3 and Comparative Example 4, it can be seen that the addition amount of the fluorinated acrylate polymer also has a significant effect on the performance of the material. When the addition amount of the acrylate polymer is reduced, it is difficult to coat the film, and the pattern performance of the photoresist is significantly reduced. In addition, the reduction of the fluorinated polymer will also lead to a decrease in the chemical resistance and hydrophobicity of the material. When the addition amount of the fluorinated acrylate polymer is too much, good sensitivity cannot be obtained, the pattern performance will decrease, and the refractive index of the material will also be affected.

[0095] In combination with Example 1, Comparative Example 5 and Comparative Example 6, it can be seen that the amount of photosensitizer added will also seriously affect the performance of the material. When the amount of photosensitizer added is reduced, the sensitivity of the photoresist will be significantly reduced, and the pattern performance will be reduced; when the amount of photosensitizer added is increased, phase separation will occur and the pattern contrast will deteriorate, and the pattern performance will decrease accordingly.

[0096] Combining Example 1, Comparative Example 7 and Comparative Example 8, it can be seen that the refractive index of Comparative Example 7 and Comparative Example 8 is significantly increased, and the chemical resistance and hydrophobicity are significantly reduced, indicating that the conventional silicone resin and acrylate resin, compared with the fluorine-containing acrylate polymer, the refractive index of the obtained photoresist does not meet the microlens standard, and the chemical resistance and hydrophobicity are also significantly reduced.

[0097] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device.

[0098] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A low refractive index acrylate photoresist, characterized in that: Including the following raw materials by mass: 10-50 parts of fluorine-containing acrylate polymer; 1 to 20 parts of photosensitizer; 10 to 90 parts of organic solvent; Surfactant 0.001-1 part; The raw materials of the fluorine-containing acrylate polymer include fluorine-containing acrylic monomers, alkali-soluble terminal acrylic monomers and alkali-insoluble acrylic monomers.

2. The low refractive index acrylate photoresist according to claim 1, characterized in that: The mass ratio of the fluorine-containing acrylic monomer, the alkali-soluble terminal acrylic monomer and the alkali-insoluble acrylic monomer is 1:(1.4-1.5):(1.1-1.2).

3. The low refractive index acrylate photoresist according to claim 1, characterized in that: The chemical formula of the fluorine-containing acrylic monomer is R1-CH=CH2, wherein R1 includes a combination of one or more of trifluoromethyl, difluoromethylene, fluoroalcohol, 2,2,3,3,4,4,5,5-octafluoropentyl, 2,2,3,3,4,4-hexafluorobutyl, 2,2,2-trifluoroethyl and a linear perfluoropolyether group having 1 to 10 carbon atoms.

4. The low refractive index acrylate photoresist according to claim 1, characterized in that: The chemical formula of the alkali-soluble terminal acrylic monomer is R2-CH=CH2, wherein R2 comprises a combination of one or more of free carboxylic acid, maleic anhydride, itaconic anhydride, succinic anhydride, phthalic anhydride, salicylic acid, phenol, thiol, hydroxyl, sulfonic acid group and protective alkali-soluble group.

5. The low refractive index acrylate photoresist according to claim 4, characterized in that: The protected alkali-soluble group includes a combination of one or more of a tert-butyloxycarbonyl group, a p-phenylene vinyl group and a p-acetoxyphenylene vinyl group protected by a carboxyl group or a phenol group.

6. The low refractive index acrylate photoresist according to claim 1, characterized in that: The chemical formula of the alkali-insoluble acrylic monomer is R3-CH=CH2, wherein R3 includes a combination of one or more of free hydrogen, a straight-chain alkyl group having 1 to 10 carbon atoms, a branched alkyl group having 1 to 10 carbon atoms, a phenyl group, a biphenyl group, a cyclohexyl group, a cyclohexylene group, oxyglycidol, an epoxycyclohexyl group, an oxetane group, an acryloxy group, a methacryloyloxy group, a vinyl group, and an alkoxy group having 1 to 10 carbon atoms.

7. The low refractive index acrylate photoresist according to claim 1, characterized in that: The fluorine-containing acrylic ester polymer has a weight average molecular weight of 1,000 to 100,000, a dispersity of 1.2 to 10, and an acid value of 10 to 500 KOHmg / g.

8. The low refractive index acrylate photoresist according to claim 1, characterized in that: The fluorine-containing acrylate polymer is prepared according to the following method: Add fluorinated acrylic monomer, alkali-soluble terminal acrylic monomer, alkali-insoluble acrylic monomer and initiator to the solvent, mix well, adjust the solution temperature to 70-90°C, add a mixed solution of hydrochloric acid aqueous solution and ultrapure water dropwise, increase the temperature to 85-95°C, stir and react for 20-24 hours, and finally obtain a fluorinated acrylate polymer through phase separation and drying.

9. The low refractive index acrylate photoresist according to claim 1, characterized in that: The photosensitizer includes one or more combinations of benzoin derivatives, benzil ketal derivatives, dialkoxyacetophenones, α-hydroxyalkyl phenones, α-aminoalkyl phenones, acylphosphine oxides, esterified oxime ketone compounds, aromatic peroxyester compounds, halogenated methyl aromatic ketones, organic sulfur-containing compounds and benzoylformate.

10. The method for preparing a low-refractive-index acrylate photoresist according to any one of claims 1 to 9, characterized in that: Prepared according to the following process steps: In a yellow light dust-free environment, fluorine-containing acrylate polymer, photosensitizer and surfactant are weighed according to corresponding mass fractions and added to an organic solvent, mixed and dissolved, and filtered to obtain a low-refractive-index acrylate photoresist.

Images