Control structure and method for optimizing surface defects of high-concentration boron doping process

Abstract

The invention relates to the field of integrated circuit manufacturing, and discloses a control structure and method for optimizing high-concentration boron-doped process surface defects, and the control structure comprises a gas shunting assembly and a boron-doped process slide placing assembly. A plurality of groups of boron-doped process slide glass units are placed on the boron-doped process slide glass placing assembly, the gas shunting assembly is located right above the plurality of groups of boron-doped process slide glass units, and a plurality of gas input ports and a plurality of gas output ports are formed in the gas shunting assembly; the plurality of gas input ports are used for introducing process nitrogen or compressed air; and the plurality of gas output ports are arranged towards the plurality of groups of boron-doped process slide glass units. According to the method, the ambient humidity around the high-concentration boron doping process is controlled through nitrogen or compressed air purging, so that the moisture absorption risk points of the high-concentration boron doping process are remarkably reduced, the surface defects possibly generated in the boron doping process of the wafer are reduced, and the surface quality and the overall performance of the wafer are improved.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit manufacturing, and in particular to a control structure and method for optimizing surface defects in a high-concentration boron-doped process. Background Art

[0002] Integrated circuits include transistors, resistors, capacitors and other components that are tightly arranged on a semiconductor silicon wafer. These components may interfere with each other due to electric field interactions, resulting in circuit performance degradation or failure. Therefore, isolation technology is required in integrated circuit manufacturing to ensure that each component works independently at a specific potential. Common isolation technologies in integrated circuits include PN junction isolation, LOCOS isolation and trench isolation. Bipolar integrated circuit isolation technology mostly uses PN junction isolation. To ensure that the device is fully isolated, the isolation wall is required to penetrate the epitaxial layer of more than ten microns. At the same time, in order to reduce the saturation voltage drop of the SPNP device, its series resistance also needs to be reduced. Therefore, the product must use a high-concentration boron doping process.

[0003] The high-concentration boron doping process mostly uses a boron source sheet or a chemical vapor deposition process. The process principle is to use a boron source sheet or a chemical vapor deposition method to deposit a high-doping concentration BSG. The high-concentration boron atoms in the BSG are used as a doping source to continuously diffuse into the silicon substrate to achieve substrate doping. This method is usually used in bipolar integrated circuit isolation processes.

[0004] When the concentration of concentrated boron doping reaches E20 / cm 3 When the product is used, corrosion pit defects are prone to appear on the surface. Microscopic examination shows bright spots in the dark field, and scanning electron microscopy analysis shows corrosion pits. Figure 1 The high concentration boron doping process usually uses a boron source or BSG diffusion process. When the concentration of the concentrated boron doping process reaches E20 / cm 3 When the doping area is high density, dark field bright spot defects will be formed on the surface of the doped area. In bipolar integrated circuit products, devices are generally not arranged in the high concentration doping area, which is only used as PN junction isolation. However, in some operational amplifiers, the input pair super BETA NPN devices are arranged in the isolation wall. These defects will directly affect the leakage and gain characteristics of the device, resulting in reduced circuit performance.

[0005] The mainstream view in the industry that high-concentration boron doping process introduces lattice defects is that high-concentration doping atoms are introduced into the substrate, and the stress mismatch between the doped area and the non-doped area induces defects on the surface. Therefore, it is generally believed that the presence of dark field bright spots in the high-concentration doping area is a normal phenomenon. In the long-term work in diffusion process, it is found that the correlation between the density of dark field bright spots in the doping area and the concentration of the doping area is not strong. The low-concentration doped products also have abnormal and serious dark field bright spots, and the high-concentration doped products have also appeared normal products. Therefore, the mechanism of stress adaptation in the high-concentration doping area to introduce defects is not completely correct, and there are other process influencing factors.

[0006] Due to the high concentration of boron in the high concentration boron doping area, the presence of boron atoms in the surface BSG film causes the Si-O bonds in the silicon oxide to break and form bonds with the boron atoms, forming a loose honeycomb film structure that easily absorbs moisture. In view of the apparent moisture absorption characteristics of the high concentration boron doping process, there is a possibility that the boron oxide in the film combines with water to generate metaboric acid to corrode the lattice structure and form defects.

[0007] In the prior art, the risk points of possible moisture absorption in the high-concentration doping process module are checked one by one, and the main risk point identified is the high-temperature furnace stage when the surface is coated with BSG film after the boron doping is completed; process experiments were carried out on the above risk points, and it was found that the risk point has an impact on the appearance of the product. Its impact shows that the surface of the product is easy to absorb moisture when the boron doping process in the high-concentration boron doping process module is out of the boat at high temperature, and dark field bright spot defects appear on the surface. When the ambient humidity of the boron doping process is controlled below 38% when the product is out of the boat, the dark field bright spot can be eliminated on the surface. The higher the humidity, the more serious the dark field bright spot. The detailed verification results are shown in Table 1.

[0008] Table 1 Verification of moisture absorption risk points in high concentration boron doping process

[0009] Therefore, how to eliminate product appearance defects by controlling the humidity of the surrounding environment is a technical problem that urgently needs to be solved in the prior art. Summary of the invention

[0010] In order to overcome the defects of the above-mentioned prior art, the purpose of the present invention is to provide a control structure and method for optimizing surface defects of high-concentration boron doping process, so as to solve the technical problem of how to eliminate product surface defects by controlling the humidity of the surrounding environment in the prior art.

[0011] The present invention is achieved through the following technical solutions: In a first aspect, the present invention provides a control structure for optimizing surface defects of a high-concentration boron-doped process, including a gas diversion component and a boron-doped process wafer placement component; A plurality of groups of boron-doped process wafer units are placed on the boron-doped process wafer placement assembly, and the gas diversion assembly is located directly above the plurality of groups of boron-doped process wafer units, wherein the gas diversion assembly is provided with a plurality of gas input ports and a plurality of gas output ports; the plurality of gas input ports are used to connect process nitrogen or compressed air; and the plurality of gas output ports are arranged toward the plurality of groups of boron-doped process wafer units.

[0012] Preferably, the gas flow splitter assembly comprises a baffle and a gas flow splitter; The baffle is located directly above a plurality of groups of boron-doped process wafer carrier units; The gas flow divider is arranged on one side of the baffle plate facing a plurality of groups of boron-doped process wafer carrier units; A plurality of gas input ports are arranged on one side of the gas splitter, and a plurality of gas output ports are arranged on a side of the gas splitter facing a plurality of groups of boron-doped process wafer carrier units.

[0013] Furthermore, the baffles and the gas splitter are arranged in parallel with a plurality of groups of boron-doped process wafer carrier units and a boron-doped process wafer carrier placement assembly.

[0014] Furthermore, the gas diverter is a rectangular box structure, wherein a plurality of gas input ports are arranged side by side on the side wall of the gas diverter; and a plurality of gas output ports are arranged side by side in pairs along the long side of the gas diverter at the bottom of the gas diverter.

[0015] Furthermore, the width of the plurality of groups of boron-doped process wafer carrier units is smaller than the spacing between two adjacent gas output ports along the wide side of the gas diverter at the bottom of the gas diverter.

[0016] Furthermore, the gas outlet is arranged obliquely from inside to outside along the opening of the gas diverter.

[0017] Preferably, the boron-doped process wafer placement assembly comprises a wafer slurry and a plurality of wafer supports; The wafer carrier slurry and the gas diversion component are arranged in parallel; a plurality of wafer carrier brackets are placed on the wafer carrier slurry, and a plurality of groups of boron-doped process wafer carrier units are correspondingly placed on a plurality of wafer carrier brackets.

[0018] Furthermore, a plurality of wafer carriers are placed at intervals on the wafer carrier slurry, and a group of boron-doped process wafer carrier units is placed on each wafer carrier.

[0019] Furthermore, the boron-doped process wafer unit includes a plurality of boron-doped process wafers; the plurality of boron-doped process wafers are sequentially arranged in parallel on a wafer support.

[0020] In a second aspect, the present invention further provides a control method for optimizing surface defects of a high-concentration boron-doped process. Based on the above-mentioned control structure for optimizing surface defects of a high-concentration boron-doped process, the specific steps of the control method are as follows: Place several groups of boron-doped process wafer units on the boron-doped process wafer placement component in a predetermined order; connect high-purity process nitrogen or compressed air to the gas diversion component through the gas inlet, and evenly distribute the process nitrogen or compressed air to each gas outlet inside the gas diversion component and spray it out from the gas outlet to directly blow onto the surface of the doped boron-doped process wafer unit. During the blowing process, the process nitrogen or compressed air will blow away the water vapor on the surface of the boron-doped process wafer unit, so as to control the environmental humidity around the high-concentration boron-doped process and complete the elimination of surface defects of the high-concentration boron-doped process.

[0021] Compared with the prior art, the present invention has the following beneficial technical effects: The present invention provides a control structure for optimizing surface defects of a high-concentration boron doping process. By arranging a gas diversion component directly above a boron doping process wafer placement component and using a plurality of gas output ports to evenly blow process nitrogen or compressed air onto the wafer surface, water vapor and other potential pollutants in the environment can be effectively isolated. By blowing nitrogen or compressed air, the ambient humidity around the high-concentration boron doping process is controlled, which significantly reduces the risk points of moisture absorption in the high-concentration boron doping process and reduces the surface defects that may be generated on the wafer during the boron doping process, thereby improving the surface quality and overall performance of the wafer.

[0022] Furthermore, the baffle is located directly above the boron-doped process wafer carrier unit, which plays a role in guiding and restricting the gas flow. It ensures that the gas entering from the gas inlet can flow along a predetermined path, avoiding disorderly diffusion of the gas in the process chamber, thereby improving the gas utilization efficiency and purging effect. The gas diverter is set on the side of the baffle facing the boron-doped process wafer carrier unit. It is designed to evenly distribute the input gas to each gas output port, ensuring that the wafer surface can be evenly purged with gas, improving the control of the ambient humidity around the high-concentration boron-doped process, and reducing local surface defects caused by uneven gas distribution.

[0023] Furthermore, the parallel arrangement design enables the gas splitter to distribute the gas more evenly to each boron-doped process wafer unit. Since the baffle and the gas splitter are parallel to the wafer unit, the gas can maintain a consistent flow direction when passing through the splitter, thereby avoiding turbulence and deviation of the gas during the distribution process. The parallel arrangement makes the entire gas splitter assembly more compact and effectively utilizes the space in the process chamber, which not only reduces the space occupied by the equipment, but also makes the entire boron-doped process system neater and more efficient.

[0024] Furthermore, the gas input ports are arranged side by side on the side walls, so that the gas can enter the gas diverter evenly and stably. This layout helps to reduce the eddy current and turbulence of the gas at the inlet, ensuring that the gas enters the diverter in a stable state. The gas output ports are arranged side by side along the long side, which can ensure that the gas flows out in a uniform and continuous manner after being fully mixed and distributed inside the diverter, which helps to achieve uniform purge of the wafer surface, improve the control of the ambient humidity around the high-concentration boron doping process, and reduce surface defects caused by uneven gas distribution.

[0025] Furthermore, since the width of the boron-doped process carrier unit is smaller than the spacing between the gas outlets, each carrier unit can be surrounded by a relatively independent gas flow field. This reduces the mutual interference of gases between different carrier units and reduces the risk of cross-contamination caused by uneven gas flow or eddy currents. The larger spacing allows the gas to expand and diffuse more fully after flowing out of the outlet, thereby forming a more uniform and stable gas layer above each carrier unit. This helps to improve the accuracy of gas distribution and ensure that each carrier unit can be purged with uniform and appropriate amounts of gas.

[0026] Furthermore, the inclined gas outlet can guide the gas to flow out at a certain angle. This flow direction is more in line with the requirement for uniform gas distribution in the boron doping process. Compared with vertically or horizontally set gas outlets, the inclined setting can reduce the collision and eddy current phenomenon of the gas after it flows out, allowing the gas to cover the boron doping process carrier unit more smoothly. The inclined gas outlet helps the gas form a more uniform airflow layer after it flows out. Since the gases flow out at an inclined angle, they can be evenly distributed over a wider area, thereby reducing local surface defects caused by uneven gas distribution.

[0027] Furthermore, the parallel arrangement of the wafer carrier slurry and the gas diversion assembly makes the entire boron doping process system more compact. This layout not only reduces the space occupied by the equipment, but also makes the relative positions of the various components more clear and stable, which helps to improve the overall efficiency and stability of the process. The wafer carrier is placed on the wafer carrier slurry, so that each boron doping process wafer carrier unit has a fixed support point; avoiding the movement or deformation of the wafer during the process, ensuring the accuracy and consistency of the process.

[0028] Furthermore, the spaced placement of the wafer carriers ensures space for gas to flow above the wafer slurry, avoiding obstruction of gas flow due to overly dense carriers, and helps to distribute the gas more evenly to each boron-doped process wafer unit, ensuring that each unit is fully and evenly purged with gas.

[0029] The present invention also provides a control method for optimizing the surface defects of the high-concentration boron-doping process, by evenly distributing high-purity process nitrogen or compressed air to each gas outlet and directly blowing it to the surface of the boron-doping process wafer unit after doping, the method effectively isolates water vapor and other potential pollutants from contacting the wafer surface. In this way, the environmental humidity around the high-concentration boron-doping process is controlled, the moisture absorption risk point of the high-concentration boron-doping process is significantly reduced, and the surface defects that may be generated by the wafer during the boron-doping process are reduced, thereby improving the surface quality and overall performance of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1This is a schematic diagram of surface defects in the high concentration boron doping process in the prior art; Figure 2 A schematic diagram of a control structure for optimizing surface defects in a high-concentration boron-doping process according to an embodiment of the present invention; Figure 3 A front view of a control structure for optimizing surface defects in a high-concentration boron-doping process according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the surface condition of the high-concentration boron-doping process with improved humidity less than 38% in the present invention; In the figure: 1. baffle; 2. gas diverter; 3. gas inlet; 4. gas outlet; 5. wafer carrier slurry; 6. wafer carrier bracket; 7. boron-doped wafer carrier. DETAILED DESCRIPTION

[0031] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0032] The purpose of the present invention is to provide a control structure and method for optimizing surface defects of high-concentration boron doping process, so as to solve the technical problem of how to isolate the high-concentration boron doping process and reduce the surface defects of the high-concentration boron doping process in the prior art.

[0033] The present invention is further described in detail below in conjunction with the accompanying drawings: Example 1 See also Figure 2 and Figure 3 , In one embodiment of the present invention, a control structure for optimizing surface defects of a high concentration boron doping process is provided, including a gas diversion component and a boron doping process wafer placement component; A plurality of groups of boron-doped process wafer units are placed on the boron-doped process wafer placement assembly, and the gas diversion assembly is located directly above the plurality of groups of boron-doped process wafer units, wherein the gas diversion assembly is provided with a plurality of gas input ports 3 and a plurality of gas output ports 4; the plurality of gas input ports 3 are used to connect process nitrogen or compressed air; and the plurality of gas output ports 4 are arranged toward the plurality of groups of boron-doped process wafer units.

[0034] Specifically, the gas flow splitter assembly includes a baffle 1 and a gas flow splitter 2; The baffle 1 is located directly above a plurality of groups of boron-doped process wafer carrier units; The gas diverter 2 is arranged on one side of the baffle 1 facing a plurality of groups of boron-doped process wafer carrier units; A plurality of gas input ports 3 are arranged on one side of the gas divider 2, and a plurality of gas output ports 4 are arranged on one side of the gas divider 2 facing a plurality of groups of boron-doped process wafer carrier units.

[0035] In this embodiment, the baffle 1 is located directly above a plurality of groups of boron-doped process wafer carrier units, and mainly plays the role of guiding and limiting the flow direction of the gas.

[0036] The gas splitter 2 is arranged on the side of the baffle 1 facing the plurality of groups of boron-doped process wafer carrier units, and is a core component of the gas splitter.

[0037] The gas input port 3 is arranged at one side of the gas splitter 2 for receiving high-purity process nitrogen or compressed air or other required gases.

[0038] The gas outlet 4 is arranged on one side of the gas distributor 2 facing the plurality of groups of boron-doped process wafer carrier units, and is used to output the evenly distributed gas and purge it onto the surface of the boron-doped process wafer carrier units.

[0039] In this embodiment, high-purity process nitrogen or compressed air is connected to the gas diverter 2 through the gas input port 3. The gas entering the gas diverter 2 passes through specific flow channels and structures inside and is evenly distributed to each gas output port 4. The design of the gas diverter 2 ensures that the gas can flow out evenly and stably to meet the requirements of the boron doping process for gas flow and pressure. The gas flowing out of the gas output port 4 is directly purged onto the surface of the doped boron-doped process wafer unit. During the purging process, the process nitrogen or compressed air isolates and carries away the water vapor and other potential contaminants on the surface of the boron-doped process wafer unit, thereby reducing or eliminating the occurrence of surface defects.

[0040] Among them, the baffle 1 and the gas diverter 2 are arranged in parallel with several groups of boron-doped process wafer units and boron-doped process wafer placement components, and mainly play the role of guiding and restricting gas flow to ensure that the gas can be accurately and evenly blown to the surface of each boron-doped process wafer unit.

[0041] The gas diverter 2 is a rectangular box structure, wherein a plurality of gas input ports 3 are arranged side by side on the side wall of the gas diverter 2 ; a plurality of gas output ports 4 are arranged side by side in pairs along the long side of the gas diverter 2 at the bottom of the gas diverter 2 .

[0042] The width of the plurality of groups of boron-doped process wafer carrier units is smaller than the spacing between two adjacent gas output ports 4 along the wide side of the gas diverter 2 at the bottom of the gas diverter 2 .

[0043] The gas outlet 4 is arranged along the opening of the gas diverter 2 in an inclined manner from the inside to the outside.

[0044] In this embodiment, the width of the boron-doped process wafer carrier unit is smaller than the spacing between two adjacent gas outlets 4 along the wide side of the gas diverter 2 at the bottom of the gas diverter 2. This means that each boron-doped process wafer carrier unit can be covered by an independent gas outlet 4, thereby achieving precise gas purging.

[0045] Inclined setting of the gas outlet 4: The gas outlet 4 is inclined from the inside to the outside along the opening of the gas diverter 2, which helps the gas to form a wider and more uniform coverage area when it flows out, thereby ensuring that each boron-doped process carrier unit can be fully and evenly purged with gas.

[0046] Specifically, the boron-doped process wafer placement assembly includes a wafer slurry 5 and a plurality of wafer supports 6; The wafer carrier slurry 5 and the gas diversion assembly are arranged in parallel; a plurality of wafer carrier brackets 6 are placed on the wafer carrier slurry 5 , and a plurality of groups of boron-doped process wafer carrier units are placed on the plurality of wafer carrier brackets 6 accordingly.

[0047] Among them, a plurality of wafer carriers 6 are placed at intervals on the wafer carrier slurry 5, and a group of boron-doped wafer carrier units is correspondingly placed on each wafer carrier 6.

[0048] The boron-doped process wafer unit includes a plurality of boron-doped process wafers 7 ; the plurality of boron-doped process wafers 7 are sequentially arranged in parallel on the wafer support 6 .

[0049] In this embodiment, the wafer slurry 5 serves as the basic part of the boron-doped wafer placement assembly and is arranged in parallel with the gas diversion assembly to provide a stable supporting platform for the wafer support 6 .

[0050] Several wafer carriers 6 are placed at intervals on the wafer carrier slurry 5, and each carrier is correspondingly placed with a group of boron-doped process wafer carrier units. This spacing arrangement ensures that the gas can flow smoothly through the space below each wafer carrier 6, thereby achieving effective gas purging.

[0051] The spaced placement of the wafer holders 6 and the parallel arrangement of the boron-doped process wafers 7 ensure that the gas can flow smoothly through the space below each wafer holder 6 and be evenly blown to the surface of each group of boron-doped process wafer units, thereby improving the gas utilization and blowing efficiency.

[0052] In this embodiment, the normal humidity standard of the integrated circuit manufacturing environment is (45±5)%. For the boron source diffusion process, the FAB humidity control cannot meet the product requirements. The furnace tube of the boron source doping process is a special process, and the equipment is usually a horizontal furnace tube. In order to meet the process appearance requirements, it is possible to consider transforming the furnace tube structure into a barrel structure or designing a closed space in the boat discharge area, filling nitrogen or compressed air during the process of the boat discharge to eliminate the moisture absorption effect of the process. The surface defects of the process, such as filling nitrogen or compressed air during the process of the boat discharge, can be eliminated. Figure 4 shown.

[0053] In summary, the present invention provides a control structure for optimizing the surface defects of a high-concentration boron doping process. By arranging a gas diversion component directly above the boron doping process carrier placement component and using a number of gas output ports to evenly blow process nitrogen or compressed air to the wafer surface, water vapor and other potential pollutants in the environment can be effectively isolated. By blowing nitrogen or compressed air, the ambient humidity around the high-concentration boron doping process can be controlled, which significantly reduces the moisture absorption risk points of the high-concentration boron doping process and reduces the surface defects that may be generated on the wafer during the boron doping process, thereby improving the surface quality and overall performance of the wafer.

[0054] Example 2 This embodiment provides a control method for optimizing surface defects in a high-concentration boron-doped process. Based on the above-mentioned control structure for optimizing surface defects in a high-concentration boron-doped process, the specific steps of the isolation method are as follows: Place several groups of boron-doped process wafer units on the boron-doped process wafer placement component in a predetermined order; connect high-purity process nitrogen or compressed air to the gas diversion component through the gas input port 3, and evenly distribute the process nitrogen or compressed air to each gas output port 4 inside the gas diversion component and spray out from the gas output port 4, and directly blow onto the surface of the doped boron-doped process wafer unit. During the blowing process, the process nitrogen or compressed air blows away the water vapor on the surface of the boron-doped process wafer unit, so as to control the environmental humidity around the high-concentration boron-doped process and complete the elimination of surface defects of the high-concentration boron-doped process.

[0055] In summary, the present invention also provides a control method for optimizing the surface defects of the high-concentration boron-doping process, which effectively isolates water vapor and other potential pollutants from contacting the surface of the carrier by evenly distributing high-purity process nitrogen or compressed air to each gas outlet and directly blowing it to the surface of the carrier unit of the boron-doping process after doping. In this way, the environmental humidity around the high-concentration boron-doping process is controlled, which significantly reduces the moisture absorption risk points of the high-concentration boron-doping process, reduces the surface defects that may be generated by the wafer during the boron-doping process, and thus improves the surface quality and overall performance of the wafer.

[0056] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in the relevant field should understand that the specific implementation methods of the present invention can still be modified or replaced by equivalents. Any modification or equivalent replacement that does not depart from the spirit and scope of the present invention should be covered within the scope of protection of the claims of the present invention.

Claims

1. A control structure for optimizing surface defects in a high concentration boron doping process, characterized in that: It includes a gas splitter assembly and a boron-doped process wafer placement assembly; A plurality of groups of boron-doped process wafer units are placed on the boron-doped process wafer placement component, and the gas diversion component is located directly above the plurality of groups of boron-doped process wafer units, wherein the gas diversion component is provided with a plurality of gas input ports (3) and a plurality of gas output ports (4); the plurality of gas input ports (3) are used to connect process nitrogen or compressed air; and the plurality of gas output ports (4) are arranged toward the plurality of groups of boron-doped process wafer units.

2. A control structure for optimizing surface defects in a high concentration boron doping process according to claim 1, characterized in that: The gas flow splitter assembly comprises a baffle (1) and a gas flow splitter (2); The baffle (1) is located directly above a plurality of groups of boron-doped process wafer carrier units; The gas flow divider (2) is arranged on a side of the baffle (1) facing a plurality of groups of boron-doped process wafer carrier units; A plurality of gas input ports (3) are arranged on one side of the gas splitter (2), and a plurality of gas output ports (4) are arranged on one side of the gas splitter (2) facing a plurality of groups of boron-doped process wafer carrier units.

3. A control structure for optimizing surface defects in a high concentration boron doping process according to claim 2, characterized in that: The baffle (1) and the gas splitter (2) are both arranged in parallel with a plurality of groups of boron-doped process wafer carrier units and a boron-doped process wafer carrier placement assembly.

4. The control structure for optimizing surface defects in a high concentration boron doping process according to claim 2, characterized in that: The gas splitter (2) is in the form of a rectangular box structure, wherein a plurality of gas input ports (3) are arranged side by side on the side wall of the gas splitter (2); and a plurality of gas output ports (4) are arranged side by side in pairs along the long side of the gas splitter (2) at the bottom of the gas splitter (2).

5. The control structure for optimizing surface defects in high-concentration boron doping process according to claim 4, characterized in that: The width of the plurality of groups of boron-doped process wafer carrier units is smaller than the spacing between two adjacent gas output ports (4) along the wide side of the gas diverter (2) at the bottom of the gas diverter (2).

6. The control structure for optimizing surface defects in a high concentration boron doping process according to claim 4, characterized in that: The gas outlet (4) is arranged along the opening of the gas diverter (2) in an inclined manner from the inside to the outside.

7. The control structure for optimizing surface defects in a high concentration boron doping process according to claim 1, characterized in that: The boron-doped process wafer placement assembly comprises a wafer slurry (5) and a plurality of wafer supports (6); The wafer carrier slurry (5) and the gas flow splitter assembly are arranged in parallel; a plurality of wafer carrier brackets (6) are placed on the wafer carrier slurry (5), and a plurality of groups of boron-doped wafer carrier units are correspondingly placed on the plurality of wafer carrier brackets (6).

8. The control structure for optimizing surface defects in a high concentration boron doping process according to claim 7, characterized in that: A plurality of wafer carriers (6) are placed at intervals on the wafer carrier slurry (5), and a group of boron-doped wafer carrier units is correspondingly placed on each wafer carrier (6).

9. The control structure for optimizing surface defects in a high concentration boron doping process according to claim 7, characterized in that: The boron-doped process wafer unit comprises a plurality of boron-doped process wafers (7); the plurality of boron-doped process wafers (7) are sequentially arranged in parallel on a wafer support (6).

10. A method for optimizing the control of surface defects in a high concentration boron doping process, characterized in that: Based on a control structure for optimizing surface defects in a high-concentration boron-doping process according to any one of claims 1 to 9, the specific steps of the control method are as follows: A plurality of groups of boron-doped process wafer units are placed on a boron-doped process wafer placement assembly in a predetermined order; high-purity process nitrogen or compressed air is connected to the gas diversion assembly through a gas input port (3); the process nitrogen or compressed air is evenly distributed to each gas output port (4) inside the gas diversion assembly and ejected from the gas output port (4) to directly blow the surface of the doped boron-doped process wafer unit; during the blowing process, the process nitrogen or compressed air blows away the water vapor on the surface of the boron-doped process wafer unit, thereby controlling the environmental humidity around the high-concentration boron-doped process and completing the work of eliminating the surface defects of the high-concentration boron-doped process.

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