A dry small high-voltage modulator

Abstract

The present invention discloses a dry-type small-scale high-voltage modulator, which relates to the field of pulse power technology. The modulator comprises a high-voltage inverter module, a power supply module, a modulation switch module, a pulse transformer module, and a control and protection module. The high-voltage inverter module is used to convert input direct current power into high-frequency alternating current power, and converts low-voltage direct current into high-voltage high-frequency alternating current through internal rectification, filtering and inverter circuits; the modulation switch module is used to modulate the power output by the high-voltage inverter module according to a control signal; the pulse transformer module is used to boost and waveform-convert the modulated power, and output high-voltage pulse power; the power supply module is used to provide the required power for the entire dry-type small-scale high-voltage modulator; and the control and protection module is used to receive external instructions and signals, thereby realizing control and protection of each module of the dry-type small-scale high-voltage modulator and communication with a host computer.

Description

Technical Field

[0001] The invention relates to the technical field of pulse power, in particular to a dry-type small high-voltage modulator. Background Art

[0002] In modern military defense systems, drones, particularly those operating low, slow, and small, pose a significant challenge to traditional air defense systems due to their stealthiness and maneuverability. The rapid development and widespread application of drone technology in recent years has further highlighted the need to upgrade and improve drone defense systems, with breakthroughs in long-range detection and interception technologies being crucial. Currently, microwave weapons, as an effective means of intercepting these drones, are becoming a hot topic in military research. Their operation relies on a stable high-voltage pulse power supply, or high-voltage modulator. However, existing high-voltage modulators present numerous challenges, limiting their widespread application in drone defense systems.

[0003] First, traditional high-voltage modulators are bulky, which is not conducive to the miniaturization and lightweighting of equipment. In modern warfare, the size and weight of equipment are directly related to its maneuverability and concealment. Therefore, miniaturization and lightweighting have become important directions for the research and development of high-voltage modulators; secondly, the voltage level and pulse stability of existing high-voltage modulators are insufficient. The drone defense system has extremely high requirements for high-voltage pulse power supplies. Not only does it require a high voltage level to ensure the effective launch of microwave weapons, but it also requires stable pulse output to ensure interception accuracy. However, high-voltage modulators in existing technologies often find it difficult to meet these requirements, resulting in limited performance of microwave weapons; in addition, there are problems with the heat dissipation performance and reliability of existing high-voltage modulators. Under high-intensity and long-term operation, the high-voltage modulator is prone to failure due to overheating, affecting the stability and reliability of the entire drone defense system. Summary of the Invention

[0004] The object of the present invention is to provide a dry-type small high-voltage modulator to solve the problems raised in the prior art.

[0005] To achieve the above objectives, the present invention provides the following technical solutions: a dry-type small high-voltage modulator, the modulator comprising a high-voltage inverter module, a power module, a modulation switch module, a pulse transformer module, and a control and protection module, the control and protection module being connected to the high-voltage inverter module, the pulse transformer module, the modulation switch module, and the power module, and the pulse transformer module being connected to the power module and the modulation switch module;

[0006] The high-voltage inverter module is used to convert the input DC power into high-frequency AC power, and converts low-voltage DC power into high-voltage and high-frequency AC power through internal rectification, filtering and inverter circuits;

[0007] The power supply module is used to provide the required electrical energy for the entire dry-type small high-voltage modulator;

[0008] The modulation switch module is used to modulate the electric energy output by the high-voltage inverter module according to the control signal;

[0009] The pulse transformer module is used to boost and waveform-convert the modulated electric energy to output high-voltage pulse electric energy;

[0010] The control and protection module is used to receive external instructions and signals, and realize the control and protection of each module of the dry-type small high-voltage modulator and the communication with the host computer.

[0011] Furthermore, the high-voltage inverter module includes a rectifier unit and a high-voltage inverter unit. The rectifier unit includes a power interface P1 and a rectifier bridge D1. The rectifier bridge D1 is composed of four identical diodes. Pins 1 and 2 of the power interface P1 are connected to the two input ends of the rectifier bridge D1. Pin 4 of the power interface P1 is grounded. The two output ends of the rectifier bridge D1 are connected to the high-voltage inverter unit. The high-voltage inverter unit includes capacitor C1, capacitor C2, capacitor C3, capacitor C4, N-Mos tube Q1, N-Mos tube Q2, inductor L1, step-up transformer T1, and diode V1. , diode V2, diode V3, diode V4, diode V5, diode V6, diode V7, diode V8, the drain of the N-Mos tube Q1 is connected to the positive output end of the rectifier bridge D1 in the rectifier unit, the source of the N-Mos tube Q1 is connected to the first end of the inductor L1, the drain of the N-Mos tube Q2 is connected to the first end of the inductor L1, the source of the N-Mos tube Q2 is connected to the negative output end of the rectifier bridge D1 in the rectifier unit, the gate of the N-Mos tube Q1 is connected to the control protection module, the gate of the N-Mos tube Q2 is connected to the control protection module, the The negative electrode of capacitor C1 is connected to the positive electrode of capacitor C2, the positive electrode of capacitor C1 is connected to the positive output end of rectifier bridge D1 in the rectifier unit, the negative electrode of capacitor C2 is connected to the negative output end of rectifier bridge D1 in the rectifier unit, the two ends of the primary winding of the boost transformer T1 are respectively connected to the second end of inductor L1 and the second end of capacitor C3, the first end of capacitor C3 is connected to the source of N-Mos tube Q2, the negative electrode of diode V6 is connected to the positive electrode of diode V5, the negative electrode of diode V5 is connected to the lower end of the secondary winding of boost transformer T1, and the positive electrode of diode V2 is connected to boost transformer T1. The lower end of the secondary winding, the cathode of the diode V2 is connected to the anode of the diode V1, the cathode of the diode V1 is connected to the first end of the capacitor C4, the cathode of the diode V3 is connected to the first end of the capacitor C4, the anode of the diode V3 is connected to the cathode of the diode V4, the anode of the diode V4 is connected to the upper end of the secondary winding of the step-up transformer T1, the cathode of the diode V7 is connected to the upper end of the secondary winding of the step-up transformer T1, the anode of the diode V7 is connected to the cathode of the diode V8, the anode of the diode V8 and the anode of the diode V6 are grounded, and the second end of the capacitor C4 is grounded.

[0012] In the above technical solution, capacitors C1 and C2 are connected in series to filter the DC power output by the rectifier bridge D1. Diodes V1 to V8 form a high-frequency rectification network to convert the high-frequency AC power output by the secondary winding of the step-up transformer T1 into DC power. N-Mos transistor Q1, N-Mos transistor Q2, inductor L1, capacitor C3 and the primary winding of the step-up transformer T1 form a high-frequency inverter circuit for converting the rectified and filtered DC power into high-frequency AC power. N-Mos transistor Q1 and N-Mos transistor Q2 serve as switching devices and are alternately turned on and off under the control of the control and protection module.

[0013] Furthermore, the modulation switch module includes a pulse modulator unit and an optocoupler drive unit, the pulse modulator unit includes an insulated gate bipolar transistor IGBT1, an insulated gate bipolar transistor IGBT2, an energy storage capacitor C, a resistor RG1, and a resistor RG2, the collector of the insulated gate bipolar transistor IGBT1 is connected to the first end of the high-voltage inverter module capacitor C4, the gate of the insulated gate bipolar transistor IGBT1 is connected to the optocoupler drive unit, the emitter of the insulated gate bipolar transistor IGBT1 is grounded, the first end of the resistor RG1 is connected to the optocoupler drive unit, the second end of the resistor RG1 is grounded, the collector of the insulated gate bipolar transistor IGBT2 is connected to the first end of the high-voltage inverter module capacitor C4, the gate of the insulated gate bipolar transistor IGBT2 is connected to the optocoupler drive unit, the emitter of the insulated gate bipolar transistor IGBT2 is grounded, the first end of the resistor RG2 is connected to the optocoupler drive unit, the second end of the resistor RG2 is grounded, the first end of the energy storage capacitor C is connected to the first end of the high-voltage inverter module capacitor C4, and the second end of the energy storage capacitor C is connected to the pulse transformer module;

[0014] The optocoupler driving unit includes a resistor R1, an optocoupler N1, an optocoupler N2, a resistor R2, a resistor R3, a resistor R4, and a resistor R5. The first end of the resistor R1 is connected to the control protection module, the other end of the resistor R1 is connected to pin 2 of the optocoupler N1, the pin 3 of the optocoupler N1 is connected to the control protection module, the pin 8 of the optocoupler N1 is connected to the power supply VCC, the pins 7 and 6 of the optocoupler N1 are connected to the first end of the resistor R2, the second end of the resistor R2 is connected to pin 4 of the optocoupler N2, and the second end of the resistor R2 is connected to the first end of the resistor R3. The second end of the resistor R3 is connected to pin 3 of the optocoupler N2, pin 5 of the optocoupler N1 is connected to the negative power supply VSS, pin 5 of the optocoupler N1 is connected to the second end of the resistor R3, pin 1 and pin 5 of the optocoupler N2 are connected to the power supply VCC, pin 2 of the optocoupler N1 is connected to the first end of the resistor R4, the second end of the resistor R4 is connected to the gates of the insulated gate bipolar transistors IGBT1 and IGBT2 in the pulse modulator unit, the first end of the resistor R5 is connected to the second end of the resistor R4, and the second end of the resistor R5 is grounded.

[0015] Furthermore, the pulse transformer module includes a pulse transformer T and a klystron unit, pin 1 of the primary winding of the pulse transformer T is connected to the second end of the energy storage capacitor C in the modulation switch module, pin 2 of the primary winding of the pulse transformer T is connected to the modulation switch module and grounded, pins 3 and pin 4 of the secondary winding of the pulse transformer T are connected to the klystron unit, and taps 5 and tap 6 of the pulse transformer T are connected to the power module; the klystron unit includes a klystron K, a klystron F, a shell interface, a switch X1, a switch X2, a switch X3, and a switch X4, the klystron F is connected to the first end of the switch X3, the klystron K is connected to the first end of the switch X1 and the first end of the switch X4, the second end of the switch X1 is connected to pin 3 of the pulse transformer T, the first end of the switch X2 is connected to the shell interface, the second end of the switch X2 is connected to pin 4 of the pulse transformer T, and the second end of the switch X3 and the second end of the switch X4 are respectively connected to the power module.

[0016] In the above technical solution, the direct current output by the high-voltage inverter module charges the capacitor C in the pulse modulation unit to store energy. The insulated gate bipolar transistor IGBT1, the insulated gate bipolar transistor IGBT2, the energy storage capacitor C, the pins of the primary winding of the pulse transformer T, and pin 2 form a discharge circuit to discharge the energy stored in the energy storage capacitor C. At this time, the secondary winding of the pulse transformer T1 obtains a high-voltage pulse.

[0017] Furthermore, the power supply module includes an auxiliary power supply unit, a demagnetization power supply unit, and a filament power supply unit. The auxiliary power supply unit includes an N-Mos tube Q3, an N-Mos tube Q4, a capacitor C5, a capacitor C6, a step-down transformer T2, a diode V9, a diode V10, and a capacitor C7. The positive electrode of the capacitor C5 is connected to the drain of the N-Mos tube Q3, the source of the N-Mos tube Q3 is connected to the lower end of the primary winding of the step-down transformer T2, the drain of the N-Mos tube Q4 is connected to the lower end of the primary winding of the step-down transformer T2, and the N-Mos tube Q The source of the transistor 4 is connected to the negative electrode of the capacitor C6, the gates of the N-MOS transistors Q3 and Q4 are connected to the control protection module, the upper end of the primary winding of the step-up transformer T2 is connected to the negative electrode of the capacitor C5 and the positive electrode of the capacitor C6, the upper end of the secondary winding of the step-down transformer T2 is connected to the positive electrode of the diode V9, the lower end of the secondary winding of the step-down transformer T2 is connected to the positive electrode of the diode V10, the negative electrode of the diode V9 and the negative electrode of the diode V10 are connected to the positive electrode of the capacitor C7, and the center tap of the step-down transformer T2 is connected to the negative electrode of the capacitor C7.

[0018] In the above technical solution, N-MOSFET Q3, N-MOSFET Q4, capacitor C5, capacitor C6 and the primary winding of the step-down transformer T2 form a half-bridge inverter circuit. The secondary winding of the step-down transformer T2 is center-tapped full-wave rectified and filtered by diodes V9 and V10 to output a stable DC voltage.

[0019] The demagnetization power supply unit includes a capacitor group C11, an N-MOS tube Q9, an inductor L2, an N-MOS tube Q10, and a capacitor group C12. The capacitor group C11 and the capacitor group C12 are both composed of two parallel capacitors. The drain of the N-MOS tube Q9 is connected to the positive electrode of the capacitor C11, the source of the N-MOS tube Q9 is connected to the first end of the inductor L2, and the gate of the N-MOS tube Q9 is connected to the control protection module. The drain of the N-MOS tube Q10 is connected to the first end of the inductor L2, the source of the N-MOS tube Q10 is connected to the negative electrode of the capacitor group C11, and the gate of the N-MOS tube Q10 is connected to the control protection module. The second end of the inductor L2 is connected to the positive electrode of the capacitor group C12, the second end of the inductor L2 is connected to the tap 5 of the pulse transformer T in the pulse transformer module, and the negative electrode of the capacitor group C12 is connected to the tap 6 of the pulse transformer T in the pulse transformer module.

[0020] In the above technical solution, N-MOS tube Q9, N-MOS tube Q10, and inductor L2 form a BUCK circuit, which inputs DC 24V and is chopped and output to the pulse transformer T for demagnetization.

[0021] The filament power supply unit includes a resistor FU1, a capacitor group C8, a capacitor group C9, an N-MOS tube Q5, an N-MOS tube Q6, an N-MOS tube Q7, an N-MOS tube Q8, a capacitor C10, and a high-voltage isolation transformer T3. The capacitor groups C8 and C9 are both composed of two capacitors connected in parallel. The first end of the resistor FU1 is used to input 24V DC power, the second end of the resistor FU1 is connected to the positive electrode of the capacitor group C8, the negative electrode of the capacitor group C8 is connected to the positive electrode of the capacitor group C9, the negative electrode of the capacitor group C9 is connected to the source of the N-MOS tube Q6, the drain of the N-MOS tube Q6 is connected to the lower end of the primary winding of the high-voltage isolation transformer T3, the gate of the N-MOS tube Q6 is connected to the control protection module, the drain of the N-MOS tube Q5 is connected to the positive electrode of the capacitor group C8, and the N- The source of the MOS tube Q5 is connected to the lower end of the primary winding of the high-voltage isolation transformer T3, the drain of the N-MOS tube Q7 is connected to the positive electrode of the capacitor group C8, the source of the N-MOS tube Q7 is connected to the first end of the capacitor C10, the gate of the N-MOS tube Q7 is connected to the control protection module, the source of the N-MOS tube Q8 is connected to the negative electrode of the capacitor group C9, the drain of the N-MOS tube Q8 is connected to the first end of the capacitor C10, and the gate of the N-MOS tube Q8 is connected to the control protection module. The upper end of the primary winding of the high-voltage isolation transformer T3 is connected to the second end of the capacitor C10, the upper end of the secondary winding of the high-voltage isolation transformer T3 is connected to the second end of the switch X3 in the pulse transformer module, and the lower end of the secondary winding of the high-voltage isolation transformer T3 is connected to the second end of the switch X4 in the pulse transformer module.

[0022] In the above technical solution, N-MOSFETs Q5 to Q8, capacitor C10, and high-voltage isolation transformer T3 form a full-bridge inverter. High-voltage isolation transformer T3 steps down the output high-frequency AC to power the klystron filament. The isolation voltage of high-voltage isolation transformer T3 is greater than 55kV.

[0023] Furthermore, the control protection module includes a CAN communication interface P2, a microcontroller MCU, a chip FPGA, a BNC connector P3, and a pulse signal Pulse. Pin 1 of the CAN communication interface P2 is connected to the CAN-H pin of the microcontroller MCU, pin 2 of the CAN communication interface P2 is connected to the CAN-L pin of the microcontroller MCU, pin 3 of the CAN communication interface P2 is grounded, pins S1, S2, S3, S4, S5, and S6 of the microcontroller MCU are correspondingly connected to pins S1, S2, S3, S4, S5, and S6 of the chip FPGA, the BNC connector P3 is connected to the chip FPGA, the pulse signal Pulse is connected to the chip FPGA through the BNC connector P3, the pin Driver A of the chip FPGA is connected to the gate of the N-Mos tube Q1 in the high-voltage inverter module, the pin Driver B of the chip FPGA is connected to the gate of the N-Mos tube Q2 in the high-voltage inverter module, the pin Driver 1 of the chip FPGA is connected to the gate of the N-Mos tube Q3 in the power module, and the pin Driver of the chip FPGA is connected to the gate of the N-Mos tube Q3 in the power module. 2 is connected to the gate of the N-MOS tube Q4 in the power module, the pin QCGa of the chip FPGA is connected to the gate of the N-MOS tube Q9 in the power module, the pin QCGb of the chip FPGA is connected to the gate of the N-MOS tube Q10 in the power module, the pin DSGa of the chip FPGA is connected to the gate of the N-MOS tube Q5 in the power module, the pin DSGb of the chip FPGA is connected to the gate of the N-MOS tube Q6 in the power module, the pin DSGc of the chip FPGA is connected to the gate of the N-MOS tube Q7 in the power module, and the pin DSGd of the chip FPGA is connected to the gate of the N-MOS tube Q8 in the power module. The pin Drave+ of the chip FPGA is connected to the first end of the resistor R1 in the modulation switch module, and the pin Drave- of the chip FPGA is connected to pin 3 of the optocoupler N1 in the modulation switch module.

[0024] In the above technical solution, the microcontroller MCU and the chip FPGA form an embedded software and hardware system to realize the control and protection of the modulator and the communication with the host computer.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] By optimizing the structural design, the present invention realizes a dry-type small high-voltage modulator, significantly reducing the size and weight of the device and improving its mobility and concealment. In terms of voltage level and pulse stability, the present invention can output high-voltage DC voltage and has stable pulse output capability.

[0027] The present invention has intelligent control and protection functions. Through the embedded hardware and software system composed of the microcontroller MCU and the chip FPGA, it realizes precise control, real-time monitoring and effective protection of the system, thereby improving the operating efficiency and safety of the equipment. At the same time, the system also supports communication with the host computer, facilitating remote monitoring and maintenance, and further improving the usability and maintainability of the equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a structural schematic diagram of a dry-type small high-voltage modulator of the present invention;

[0029] Figure 2 This is a circuit diagram of a high-voltage inverter module of a dry-type small-sized high-voltage modulator according to the present invention;

[0030] Figure 3 This is a circuit diagram of a modulation switch module of a dry-type small high-voltage modulator of the present invention;

[0031] Figure 4 This is a module diagram of a demagnetization power supply unit of a dry-type small high-voltage modulator of the present invention;

[0032] Figure 5 This is a circuit diagram of an auxiliary power supply unit of a dry-type small high-voltage modulator of the present invention;

[0033] Figure 6 This is a circuit diagram of a filament power supply unit of a dry-type small high-voltage modulator of the present invention;

[0034] Figure 7 This is a circuit diagram of a pulse transformer module of a dry-type small high-voltage modulator of the present invention;

[0035] Figure 8 This is a circuit diagram of a control and protection module of a dry-type small high-voltage modulator according to the present invention;

[0036] In the figure: 1. High-voltage inverter module; 2. Power supply module; 3. Modulation switch module; 4. Pulse transformer module; 5. Control and protection module. DETAILED DESCRIPTION

[0037] Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative work shall fall within the scope of protection of the present invention.

[0038] Example: Figures 1-8 As shown, the present invention provides a dry type small high voltage modulator, such as Figure 1As shown in the structural diagram, the modulator includes a high-voltage inverter module 1, a power module 2, a modulation switch module 3, a pulse transformer module 4, and a control and protection module 5. The control and protection module 5 is connected to the high-voltage inverter module 1, the pulse transformer module 4, the modulation switch module 3, and the power module 2, and the pulse transformer module 4 is connected to the power module 2 and the modulation switch module 3;

[0039] The high-voltage inverter module 1 is used to convert the input DC power into high-frequency AC power, and convert the low-voltage DC power into high-voltage and high-frequency AC power through internal rectification, filtering and inversion circuits;

[0040] The power supply module 2 is used to provide the required electrical energy for the entire dry-type small high-voltage modulator;

[0041] The modulation switch module 3 is used to modulate the electric energy output by the high-voltage inverter module according to the control signal;

[0042] The pulse transformer module 4 is used to boost and waveform-convert the modulated electric energy to output high-voltage pulse electric energy;

[0043] The control and protection module 5 is used to receive external instructions and signals, and realize the control and protection of each module of the dry-type small high-voltage modulator and the communication with the host computer.

[0044] like Figure 2As shown in the circuit diagram of the high-voltage inverter module, the high-voltage inverter module includes a rectifier unit and a high-voltage inverter unit. The rectifier unit includes a power interface P1 and a rectifier bridge D1. The rectifier bridge D1 is composed of four identical diodes. Pins 1 and 2 of the power interface P1 are connected to the two input ends of the rectifier bridge D1. Pin 4 of the power interface P1 is grounded. The two output ends of the rectifier bridge D1 are connected to the high-voltage inverter unit; the high-voltage inverter unit includes capacitor C1, capacitor C2, capacitor C3, capacitor C4, N-Mos tube Q1, N-Mos tube Q2, inductor L1, step-up transformer T1, Diode V1, diode V2, diode V3, diode V4, diode V5, diode V6, diode V7, diode V8, the drain of the N-Mos tube Q1 is connected to the positive output end of the rectifier bridge D1 in the rectifier unit, the source of the N-Mos tube Q1 is connected to the first end of the inductor L1, the drain of the N-Mos tube Q2 is connected to the first end of the inductor L1, the source of the N-Mos tube Q2 is connected to the negative output end of the rectifier bridge D1 in the rectifier unit, the gate of the N-Mos tube Q1 is connected to the control protection module, and the gate of the N-Mos tube Q2 is connected to the control protection module The negative electrode of the capacitor C1 is connected to the positive electrode of the capacitor C2, the positive electrode of the capacitor C1 is connected to the positive output end of the rectifier bridge D1 in the rectifier unit, the negative electrode of the capacitor C2 is connected to the negative output end of the rectifier bridge D1 in the rectifier unit, the two ends of the primary winding of the step-up transformer T1 are respectively connected to the second end of the inductor L1 and the second end of the capacitor C3, the first end of the capacitor C3 is connected to the source of the N-Mos tube Q2, the negative electrode of the diode V6 is connected to the positive electrode of the diode V5, the negative electrode of the diode V5 is connected to the lower end of the secondary winding of the step-up transformer T1, and the positive electrode of the diode V2 is connected to the step-up transformer The lower end of the secondary winding of T1, the cathode of the diode V2 is connected to the anode of the diode V1, the cathode of the diode V1 is connected to the first end of the capacitor C4, the cathode of the diode V3 is connected to the first end of the capacitor C4, the anode of the diode V3 is connected to the cathode of the diode V4, the anode of the diode V4 is connected to the upper end of the secondary winding of the step-up transformer T1, the cathode of the diode V7 is connected to the upper end of the secondary winding of the step-up transformer T1, the anode of the diode V7 is connected to the cathode of the diode V8, the anode of the diode V8 and the anode of the diode V6 are grounded, and the second end of the capacitor C4 is grounded.

[0045] In the above technical solution, capacitors C1 and C2 are connected in series to filter the DC power output by the rectifier bridge D1. Diodes V1 to V8 form a high-frequency rectification network to convert the high-frequency AC power output by the secondary winding of the step-up transformer T1 into DC power. N-Mos transistor Q1, N-Mos transistor Q2, inductor L1, capacitor C3 and the primary winding of the step-up transformer T1 form a high-frequency inverter circuit for converting the rectified and filtered DC power into high-frequency AC power. N-Mos transistor Q1 and N-Mos transistor Q2 serve as switching devices and are alternately turned on and off under the control of the control and protection module.

[0046] like Figure 3 As shown in the modulation switch circuit diagram, the modulation switch module includes a pulse modulator unit and an optocoupler drive unit. The pulse modulator unit includes an insulated gate bipolar transistor IGBT1, an insulated gate bipolar transistor IGBT2, an energy storage capacitor C, a resistor RG1, and a resistor RG2. The collector of the insulated gate bipolar transistor IGBT1 is connected to the first end of the high-voltage inverter module capacitor C4, the gate of the insulated gate bipolar transistor IGBT1 is connected to the optocoupler drive unit, the emitter of the insulated gate bipolar transistor IGBT1 is grounded, the first end of the resistor RG1 is connected to the optocoupler drive unit, the second end of the resistor RG1 is grounded, the collector of the insulated gate bipolar transistor IGBT2 is connected to the first end of the high-voltage inverter module capacitor C4, the gate of the insulated gate bipolar transistor IGBT2 is connected to the optocoupler drive unit, the emitter of the insulated gate bipolar transistor IGBT2 is grounded, the first end of the resistor RG2 is connected to the optocoupler drive unit, the second end of the resistor RG2 is grounded, the first end of the energy storage capacitor C is connected to the first end of the high-voltage inverter module capacitor C4, and the second end of the energy storage capacitor C is connected to the pulse transformer module;

[0047] The optocoupler driving unit includes a resistor R1, an optocoupler N1, an optocoupler N2, a resistor R2, a resistor R3, a resistor R4, and a resistor R5. The first end of the resistor R1 is connected to the control protection module, the other end of the resistor R1 is connected to pin 2 of the optocoupler N1, the pin 3 of the optocoupler N1 is connected to the control protection module, the pin 8 of the optocoupler N1 is connected to the power supply VCC, the pins 7 and 6 of the optocoupler N1 are connected to the first end of the resistor R2, the second end of the resistor R2 is connected to pin 4 of the optocoupler N2, and the second end of the resistor R2 is connected to the first end of the resistor R3. The second end of the resistor R3 is connected to pin 3 of the optocoupler N2, pin 5 of the optocoupler N1 is connected to the negative power supply VSS, pin 5 of the optocoupler N1 is connected to the second end of the resistor R3, pin 1 and pin 5 of the optocoupler N2 are connected to the power supply VCC, pin 2 of the optocoupler N1 is connected to the first end of the resistor R4, the second end of the resistor R4 is connected to the gates of the insulated gate bipolar transistors IGBT1 and IGBT2 in the pulse modulator unit, the first end of the resistor R5 is connected to the second end of the resistor R4, and the second end of the resistor R5 is grounded.

[0048] like Figure 4 As shown in the circuit diagram of the pulse transformer module, the pulse transformer module includes a pulse transformer T and a klystron unit. Pin 1 of the primary winding of the pulse transformer T is connected to the second end of the energy storage capacitor C in the modulation switch module, pin 2 of the primary winding of the pulse transformer T is connected to the modulation switch module and grounded, pins 3 and 4 of the secondary winding of the pulse transformer T are connected to the klystron unit, and taps 5 and 6 of the pulse transformer T are connected to the power module; the klystron unit includes a klystron K, a klystron F, a shell interface, a switch X1, a switch X2, a switch X3, and a switch X4. The klystron F is connected to the first end of the switch X3, the klystron K is connected to the first end of the switch X1 and the first end of the switch X4, the second end of the switch X1 is connected to pin 3 of the pulse transformer T, the first end of the switch X2 is connected to the shell interface, the second end of the switch X2 is connected to pin 4 of the pulse transformer T, and the second end of the switch X3 and the second end of the switch X4 are respectively connected to the power module.

[0049] In the above technical solution, the direct current output by the high-voltage inverter module charges the capacitor C in the pulse modulation unit to store energy. The insulated gate bipolar transistor IGBT1, the insulated gate bipolar transistor IGBT2, the energy storage capacitor C, the pins of the primary winding of the pulse transformer T, and pin 2 form a discharge circuit to discharge the energy stored in the energy storage capacitor C. At this time, the secondary winding of the pulse transformer T1 obtains a high-voltage pulse.

[0050] Working principle of high voltage pulse:

[0051] The single-phase 380V mains electricity is low-frequency rectified by rectifier bridge D1 and filtered by the series network consisting of capacitors C1 and C2, outputting a DC voltage of approximately 510V. This voltage is then inverted at high frequency by the inverter circuit consisting of N-MOSFETs Q1 and Q2, inductor L1, capacitor C3, and the primary winding of step-up transformer T1. After being boosted by step-up transformer T1, it is rectified at high frequency by the high-frequency rectifier network consisting of diodes V1 to V8, and filtered by capacitor C4, outputting a DC voltage of approximately 1kV.

[0052] A direct current of about 1KV charges and stores energy in the energy storage capacitor C in the modulation switch module. When an external timing signal controls the insulated gate bipolar transistor IGBT1 and the insulated gate bipolar transistor IGBT2 to work, a discharge circuit composed of the insulated gate bipolar transistor IGBT1, the insulated gate bipolar transistor IGBT2, the energy storage capacitor C, and pins 1 and 2 of the primary winding of the pulse transformer discharges the energy stored in the energy storage capacitor C. At this time, the secondary side of the pulse transformer obtains a high-voltage pulse.

[0053] like Figures 5 to 7 As shown, the power supply module includes an auxiliary power supply unit, a demagnetization power supply unit, and a filament power supply unit. The auxiliary power supply unit includes an N-Mos tube Q3, an N-Mos tube Q4, a capacitor C5, a capacitor C6, a step-down transformer T2, a diode V9, a diode V10, and a capacitor C7. The positive electrode of the capacitor C5 is connected to the drain of the N-Mos tube Q3, the source of the N-Mos tube Q3 is connected to the lower end of the primary winding of the step-down transformer T2, the drain of the N-Mos tube Q4 is connected to the lower end of the primary winding of the step-down transformer T2, and the N-Mos tube Q4 is connected to the lower end of the primary winding of the step-down transformer T2. The source is connected to the negative electrode of capacitor C6, the gates of the N-MOS tube Q3 and the N-MOS tube Q4 are connected to the control protection module, the upper end of the primary winding of the step-up transformer T2 is connected to the negative electrode of capacitor C5 and the positive electrode of capacitor C6, the upper end of the secondary winding of the step-down transformer T2 is connected to the positive electrode of diode V9, the lower end of the secondary winding of the step-down transformer T2 is connected to the positive electrode of diode V10, the negative electrode of diode V9 and the negative electrode of diode V10 are connected to the positive electrode of capacitor C7, and the center tap of the step-down transformer T2 is connected to the negative electrode of capacitor C7.

[0054] In the above technical solution, N-MOSFET Q3, N-MOSFET Q4, capacitor C5, capacitor C6 and the primary winding of the step-down transformer T2 form a half-bridge inverter circuit. The secondary winding of the step-down transformer T2 is center-tapped full-wave rectified and filtered by diodes V9 and V10 to output a stable DC voltage.

[0055] Working principle of auxiliary power supply unit:

[0056] The input DC is 510V, which is converted into high-frequency inverter by forming a half-bridge inverter circuit through N-MOS tube Q3, N-MOS tube Q4, capacitor C5, capacitor C6 and the primary winding of step-down transformer T2. The step-down transformer T2 performs step-down full-wave rectification and filtering to output 24V DC.

[0057] The demagnetization power supply unit includes a capacitor group C11, an N-MOS tube Q9, an inductor L2, an N-MOS tube Q10, and a capacitor group C12. The capacitor group C11 and the capacitor group C12 are both composed of two parallel capacitors. The drain of the N-MOS tube Q9 is connected to the positive electrode of the capacitor C11, the source of the N-MOS tube Q9 is connected to the first end of the inductor L2, and the gate of the N-MOS tube Q9 is connected to the control protection module. The drain of the N-MOS tube Q10 is connected to the first end of the inductor L2, the source of the N-MOS tube Q10 is connected to the negative electrode of the capacitor group C11, and the gate of the N-MOS tube Q10 is connected to the control protection module. The second end of the inductor L2 is connected to the positive electrode of the capacitor group C12, the second end of the inductor L2 is connected to the tap 5 of the pulse transformer T in the pulse transformer module, and the negative electrode of the capacitor group C12 is connected to the tap 6 of the pulse transformer T in the pulse transformer module.

[0058] In the above technical solution, N-MOS tube Q9, N-MOS tube Q10, and inductor L2 form a BUCK circuit, which inputs DC 24V and is chopped and output to the pulse transformer T for demagnetization.

[0059] The filament power supply unit includes a resistor FU1, a capacitor group C8, a capacitor group C9, an N-MOS tube Q5, an N-MOS tube Q6, an N-MOS tube Q7, an N-MOS tube Q8, a capacitor C10, and a high-voltage isolation transformer T3. The capacitor groups C8 and C9 are both composed of two capacitors connected in parallel. The first end of the resistor FU1 is used to input 24V DC power, the second end of the resistor FU1 is connected to the positive electrode of the capacitor group C8, the negative electrode of the capacitor group C8 is connected to the positive electrode of the capacitor group C9, the negative electrode of the capacitor group C9 is connected to the source of the N-MOS tube Q6, the drain of the N-MOS tube Q6 is connected to the lower end of the primary winding of the high-voltage isolation transformer T3, the gate of the N-MOS tube Q6 is connected to the control protection module, the drain of the N-MOS tube Q5 is connected to the positive electrode of the capacitor group C8, and the N- The source of the MOS tube Q5 is connected to the lower end of the primary winding of the high-voltage isolation transformer T3, the drain of the N-MOS tube Q7 is connected to the positive electrode of the capacitor group C8, the source of the N-MOS tube Q7 is connected to the first end of the capacitor C10, the gate of the N-MOS tube Q7 is connected to the control protection module, the source of the N-MOS tube Q8 is connected to the negative electrode of the capacitor group C9, the drain of the N-MOS tube Q8 is connected to the first end of the capacitor C10, and the gate of the N-MOS tube Q8 is connected to the control protection module. The upper end of the primary winding of the high-voltage isolation transformer T3 is connected to the second end of the capacitor C10, the upper end of the secondary winding of the high-voltage isolation transformer T3 is connected to the second end of the switch X3 in the pulse transformer module, and the lower end of the secondary winding of the high-voltage isolation transformer T3 is connected to the second end of the switch X4 in the pulse transformer module.

[0060] In the above technical solution, N-MOSFETs Q5 to Q8, capacitor C10, and high-voltage isolation transformer T3 form a full-bridge inverter. High-voltage isolation transformer T3 steps down the output high-frequency AC to power the klystron filament. The isolation voltage of high-voltage isolation transformer T3 is greater than 55kV.

[0061] like Figure 8As shown in the control protection circuit diagram, the control protection module includes a CAN communication interface P2, a microcontroller MCU, a chip FPGA, a BNC connector P3, and a pulse signal Pulse. Pin 1 of the CAN communication interface P2 is connected to the CAN-H pin of the microcontroller MCU, and pin 2 of the CAN communication interface P2 is connected to the CAN-L pin of the microcontroller MCU. Pin 3 of the CAN communication interface P2 is grounded. Pins S1, S2, S3, S4, S5, and S6 of the microcontroller MCU are correspondingly connected to pins S1, S2, S3, S4, S5, and S6 of the chip FPGA. The BNC connector P3 is connected to the chip FPGA, and the pulse signal Pulse is connected to the chip FPGA through the BNC connector P3. Pin Driver A of the chip FPGA is connected to the gate of the N-Mos tube Q1 in the high-voltage inverter module, and pin Driver B of the chip FPGA is connected to the gate of the N-Mos tube Q2 in the high-voltage inverter module. Pin Driver of the chip FPGA 1 is connected to the gate of the N-MOS tube Q3 in the power module, the Driver 2 pin of the chip FPGA is connected to the gate of the N-MOS tube Q4 in the power module, the QCGa pin of the chip FPGA is connected to the gate of the N-MOS tube Q9 in the power module, the QCGb pin of the chip FPGA is connected to the gate of the N-MOS tube Q10 in the power module, the DSGa pin of the chip FPGA is connected to the gate of the N-MOS tube Q5 in the power module, the DSGb pin of the chip FPGA is connected to the gate of the N-MOS tube Q6 in the power module, the DSGc pin of the chip FPGA is connected to the gate of the N-MOS tube Q7 in the power module, and the DSGd pin of the chip FPGA is connected to the gate of the N-MOS tube Q8 in the power module. The Drave+ pin of the chip FPGA is connected to the first end of the resistor R1 in the modulation switch module, and the Drave- pin of the chip FPGA is connected to pin 3 of the optocoupler N1 in the modulation switch module.

[0062] In the above technical solution, the microcontroller MCU and the chip FPGA form an embedded software and hardware system to realize the control and protection of the modulator and the communication with the host computer.

[0063] Finally, it should be noted that the above descriptions are merely preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art will be able to modify the technical solutions described in the aforementioned embodiments or substitute equivalents for some of the technical features. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the present invention.

Claims

1. A dry-type small high-voltage modulator, characterized in that: The modulator comprises a high-voltage inverter module (1), a power module (2), a modulation switch module (3), a pulse transformer module (4), and a control protection module (5); the control protection module (5) is connected to the high-voltage inverter module (1), the pulse transformer module (4), the modulation switch module (3), and the power module (2); and the pulse transformer module (4) is connected to the power module (2) and the modulation switch module (3); The high-voltage inverter module (1) is used to convert input direct current power into high-frequency alternating current power, and converts low-voltage direct current into high-voltage and high-frequency alternating current through internal rectification, filtering and inverter circuits; The power supply module (2) is used to provide the required electrical energy for the entire dry-type small high-voltage modulator; The power supply module (2) further includes a demagnetization power supply unit, which includes a capacitor group C11, an N-Mos tube Q9, an inductor L2, an N-Mos tube Q10, and a capacitor group C12. The capacitor group C11 and the capacitor group C12 are both composed of two parallel capacitors. The drain of the N-Mos tube Q9 is connected to the positive electrode of the capacitor group C11, the source of the N-Mos tube Q9 is connected to the first end of the inductor L2, and the gate of the N-Mos tube Q9 is connected to the control protection module (5). The drain of the N-Mos transistor Q10 is connected to the first end of the inductor L2, the source of the N-Mos transistor Q10 is connected to the negative electrode of the capacitor group C11, the gate of the N-Mos transistor Q10 is connected to the control protection module (5), the second end of the inductor L2 is connected to the positive electrode of the capacitor group C12, the second end of the inductor L2 is connected to the tap 5 of the pulse transformer T in the pulse transformer module (4), and the negative electrode of the capacitor group C12 is connected to the tap 6 of the pulse transformer T in the pulse transformer module (4); The modulation switch module (3) is used to modulate the electric energy output by the high-voltage inverter module according to the control signal; The pulse transformer module (4) is used to boost and waveform-convert the modulated electric energy to output high-voltage pulse electric energy; The control and protection module (5) is used to receive external instructions and signals, and realize control and protection of each module of the dry-type small high-voltage modulator and communication with the host computer.

2. A dry-type small high-voltage modulator according to claim 1, characterized in that: The high-voltage inverter module (1) comprises a rectifier unit and a high-voltage inverter unit, wherein the rectifier unit comprises a power interface P1 and a rectifier bridge D1, wherein the rectifier bridge D1 is composed of four identical diodes, wherein pins 1 and 2 of the power interface P1 are connected to two input terminals of the rectifier bridge D1, and pin 4 of the power interface P1 is grounded, and two output terminals of the rectifier bridge D1 are connected to the high-voltage inverter unit; The high-voltage inverter unit includes capacitor C1, capacitor C2, capacitor C3, capacitor C4, N-Mos tube Q1, N-Mos tube Q2, inductor L1, boost transformer T1, diode V1, diode V2, diode V3, diode V4, diode V5, diode V6, diode V7, and diode V8. The drain of the N-Mos tube Q1 is connected to the positive output end of the rectifier bridge D1 in the rectifier unit, the source of the N-Mos tube Q1 is connected to the first end of the inductor L1, and the N- The drain of the MOS tube Q2 is connected to the first end of the inductor L1, the source of the N-MOS tube Q2 is connected to the negative output end of the rectifier bridge D1 in the rectifier unit, the gate of the N-MOS tube Q1 is connected to the control protection module (5), the gate of the N-MOS tube Q2 is connected to the control protection module (5), the negative electrode of the capacitor C1 is connected to the positive electrode of the capacitor C2, the positive electrode of the capacitor C1 is connected to the positive output end of the rectifier bridge D1 in the rectifier unit, and the negative electrode of the capacitor C2 is connected to the positive output end of the rectifier bridge D1 in the rectifier unit. 1, the two ends of the primary winding of the step-up transformer T1 are respectively connected to the second end of the inductor L1 and the second end of the capacitor C3. The first end of the capacitor C3 is connected to the source of the N-MOS transistor Q2. The cathode of the diode V6 is connected to the anode of the diode V5. The cathode of the diode V5 is connected to the lower end of the secondary winding of the step-up transformer T1. The anode of the diode V2 is connected to the lower end of the secondary winding of the step-up transformer T1. The cathode of the diode V2 is connected to the anode of the diode V1. The cathode of the diode V1 is connected to the first end of the capacitor C4. The cathode of the diode V3 is connected to the first end of the capacitor C4. The anode of the diode V3 is connected to the cathode of the diode V4. The anode of the diode V4 is connected to the upper end of the secondary winding of the step-up transformer T1. The cathode of the diode V7 is connected to the upper end of the secondary winding of the step-up transformer T1. The anode of the diode V7 is connected to the cathode of the diode V8. The anode of the diode V8 and the anode of the diode V6 are grounded. The second end of the capacitor C4 is grounded.

3. A dry-type small high-voltage modulator according to claim 1, characterized in that: The modulation switch module (3) includes a pulse modulator unit and an optocoupler drive unit. The pulse modulator unit includes an insulated gate bipolar transistor IGBT1, an insulated gate bipolar transistor IGBT2, an energy storage capacitor C, a resistor RG1, and a resistor RG2. The collector of the insulated gate bipolar transistor IGBT1 is connected to the first end of the capacitor C4 of the high-voltage inverter module (1). The gate of the insulated gate bipolar transistor IGBT1 is connected to the optocoupler drive unit. The emitter of the insulated gate bipolar transistor IGBT1 is grounded. The first end of the resistor RG1 is connected to the optocoupler drive unit. element, the second end of the resistor RG1 is grounded, the collector of the insulated gate bipolar transistor IGBT2 is connected to the first end of the capacitor C4 of the high-voltage inverter module (1), the gate of the insulated gate bipolar transistor IGBT2 is connected to the optocoupler drive unit, the emitter of the insulated gate bipolar transistor IGBT2 is grounded, the first end of the resistor RG2 is connected to the optocoupler drive unit, the second end of the resistor RG2 is grounded, the first end of the energy storage capacitor C is connected to the first end of the capacitor C4 of the high-voltage inverter module (1), and the second end of the energy storage capacitor C is connected to the pulse transformer module (4); The optocoupler drive unit comprises a resistor R1, an optocoupler N1, an optocoupler N2, a resistor R2, a resistor R3, a resistor R4, and a resistor R5; the first end of the resistor R1 is connected to a control protection module (5); the other end of the resistor R1 is connected to pin 2 of the optocoupler N1; the pin 3 of the optocoupler N1 is connected to the control protection module (5); the pin 8 of the optocoupler N1 is connected to a power supply VCC; the pins 7 and 6 of the optocoupler N1 are connected to the first end of the resistor R2; the second end of the resistor R2 is connected to pin 4 of the optocoupler N2; the second end of the resistor R2 is connected to the first end of the resistor R3 One end, the second end of the resistor R3 is connected to the pin 3 of the optocoupler N2, the pin 5 of the optocoupler N1 is connected to the negative power supply VSS, the pin 5 of the optocoupler N1 is connected to the second end of the resistor R3, the pins 1 and 5 of the optocoupler N2 are connected to the power supply VCC, the pin 2 of the optocoupler N1 is connected to the first end of the resistor R4, the second end of the resistor R4 is connected to the gates of the insulated gate bipolar transistors IGBT1 and IGBT2 in the pulse modulator unit, the first end of the resistor R5 is connected to the second end of the resistor R4, and the second end of the resistor R5 is grounded.

4. A dry-type small high-voltage modulator according to claim 1, characterized in that: The pulse transformer module (4) includes a pulse transformer T and a klystron unit, wherein pin 1 of the primary winding of the pulse transformer T is connected to the second end of the energy storage capacitor C in the modulation switch module (3), pin 2 of the primary winding of the pulse transformer T is connected to the modulation switch module (3) and grounded, pins 3 and 4 of the secondary winding of the pulse transformer T are connected to the klystron unit, and taps 5 and 6 of the pulse transformer T are connected to the power supply module (2); The klystron unit comprises a klystron K, a klystron F, a housing interface, a switch X1, a switch X2, a switch X3, and a switch X4, wherein the klystron F is connected to a first end of the switch X3, the klystron K is connected to a first end of the switch X1 and a first end of the switch X4, the second end of the switch X1 is connected to a pin 3 of the pulse transformer T, the first end of the switch X2 is connected to the housing interface, the second end of the switch X2 is connected to a pin 4 of the pulse transformer T, and the second end of the switch X3 and the second end of the switch X4 are respectively connected to a power module (2).

5. The dry-type small high-voltage modulator according to claim 1, characterized in that: The power supply module (2) includes an auxiliary power supply unit, which includes an N-Mos tube Q3, an N-Mos tube Q4, a capacitor C5, a capacitor C6, a step-down transformer T2, a diode V9, a diode V10, and a capacitor C7. The positive electrode of the capacitor C5 is connected to the drain of the N-Mos tube Q3, the source of the N-Mos tube Q3 is connected to the lower end of the primary winding of the step-down transformer T2, the drain of the N-Mos tube Q4 is connected to the lower end of the primary winding of the step-down transformer T2, and the source of the N-Mos tube Q4 is connected to the capacitor C6. The negative electrode of the N-Mos tube Q3 and the gate of the N-Mos tube Q4 are connected to the control protection module (5), the upper end of the primary winding of the step-up transformer T2 is connected to the negative electrode of the capacitor C5 and the positive electrode of the capacitor C6, the upper end of the secondary winding of the step-down transformer T2 is connected to the positive electrode of the diode V9, the lower end of the secondary winding of the step-down transformer T2 is connected to the positive electrode of the diode V10, the negative electrode of the diode V9 and the negative electrode of the diode V10 are connected to the positive electrode of the capacitor C7, and the center tap of the step-down transformer T2 is connected to the negative electrode of the capacitor C7.

6. The dry-type small high-voltage modulator according to claim 1, characterized in that: The power supply module (2) includes a filament power supply unit, which includes a resistor FU1, a capacitor group C8, a capacitor group C9, an N-Mos tube Q5, an N-Mos tube Q6, an N-Mos tube Q7, an N-Mos tube Q8, a capacitor C10, and a high-voltage isolation transformer T3. The capacitor groups C8 and C9 are both composed of two parallel capacitors. The first end of the resistor FU1 is used to input 24V DC power. The second end of the resistor FU1 is connected to the positive electrode of the capacitor group C8, the negative electrode of the capacitor group C8 is connected to the positive electrode of the capacitor group C9, the negative electrode of the capacitor group C9 is connected to the source of the N-Mos tube Q6, the drain of the N-Mos tube Q6 is connected to the lower end of the primary winding of the high-voltage isolation transformer T3, the gate of the N-Mos tube Q6 is connected to the control protection module (5), and the drain of the N-Mos tube Q5 is connected to the positive electrode of the capacitor group C8. The source of the N-Mos tube Q5 is connected to the lower end of the primary winding of the high-voltage isolation transformer T3, the drain of the N-Mos tube Q7 is connected to the positive electrode of the capacitor group C8, the source of the N-Mos tube Q7 is connected to the first end of the capacitor C10, the gate of the N-Mos tube Q7 is connected to the control protection module (5), the source of the N-Mos tube Q8 is connected to the negative electrode of the capacitor group C9, the drain of the N-Mos tube Q8 is connected to the first end of the capacitor C10, the gate of the N-Mos tube Q8 is connected to the control protection module (5), the upper end of the primary winding of the high-voltage isolation transformer T3 is connected to the second end of the capacitor C10, the upper end of the secondary winding of the high-voltage isolation transformer T3 is connected to the second end of the switch X3 in the pulse transformer module (4), and the lower end of the secondary winding of the high-voltage isolation transformer T3 is connected to the second end of the switch X4 in the pulse transformer module (4).

7. The dry-type small high-voltage modulator according to claim 1, characterized in that: The control protection module (5) includes a CAN communication interface P2, a microcontroller MCU, a chip FPGA, a BNC connector P3, and a pulse signal Pulse. Pin 1 of the CAN communication interface P2 is connected to the CAN-H pin of the microcontroller MCU, pin 2 of the CAN communication interface P2 is connected to the CAN-L pin of the microcontroller MCU, pin 3 of the CAN communication interface P2 is grounded, pins S1, S2, S3, S4, S5, and S6 of the microcontroller MCU are correspondingly connected to pins S1, S2, S3, S4, S5, and S6 of the chip FPGA, the BNC connector P3 is connected to the chip FPGA, the pulse signal Pulse is connected to the chip FPGA through the BNC connector P3, pin Driver A of the chip FPGA is connected to the gate of the N-Mos tube Q1 in the high-voltage inverter module (1), pin Driver B of the chip FPGA is connected to the gate of the N-Mos tube Q2 in the high-voltage inverter module (1), and pin Driver of the chip FPGA is connected to the gate of the N-Mos tube Q2 in the high-voltage inverter module (1). 1 is connected to the gate of the N-Mos tube Q3 in the power module (2), the pin Driver 2 of the chip FPGA is connected to the gate of the N-Mos tube Q4 in the power module (2), the pin QCGa of the chip FPGA is connected to the gate of the N-Mos tube Q9 in the power module (2), the pin QCGb of the chip FPGA is connected to the gate of the N-Mos tube Q10 in the power module (2), the pin DSGa of the chip FPGA is connected to the gate of the N-Mos tube Q5 in the power module (2), the pin DSGb of the chip FPGA is connected to the gate of the N-Mos tube Q6 in the power module (2), the pin DSGc of the chip FPGA is connected to the gate of the N-Mos tube Q7 in the power module (2), the pin DSGd of the chip FPGA is connected to the gate of the N-Mos tube Q8 in the power module (2), the pin Drave+ of the chip FPGA is connected to the first end of the resistor R1 in the modulation switch module (3), and the pin Drave- of the chip FPGA is connected to the pin 3 of the optocoupler N1 in the modulation switch module (3).

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