Manufacturing method of electronic device and electronic device

Abstract

The invention provides a manufacturing method of an electronic device and the electronic device, and the method comprises the steps: providing a supporting carrier plate which is made of plastic; bonding a glass substrate to the supporting carrier plate, wherein the material of the glass substrate is ultra-thin glass; forming a device layer on the glass substrate; and separating the glass substrate from the supporting carrier plate.

Description

Technical Field

[0001] The present disclosure relates to the technical field of circuit boards, and in particular to a method for manufacturing an electronic device and the electronic device. Background Art

[0002] Ultra-thin glass (UTG) is a very thin transparent glass material with a thickness ranging from tens to one hundred microns. It is often used as a substrate material in the consumer electronics industry, such as displays of smartphones, tablets, and wearable devices. In order to achieve thin, light, bendable and foldable electronic products, UTG needs to be separated from the rigid glass or other substrate that supports it. However, during the separation process, factors such as the bonding strength and thermal expansion coefficient differences between different materials may lead to stress concentration, which can easily cause the UTG to break or deform. How to solve the problem of UTG separation is a technical difficulty that needs to be solved urgently. Summary of the invention

[0003] The present disclosure provides a method for manufacturing an electronic device and an electronic device, so as to at least solve the above technical problems existing in the prior art.

[0004] According to a first aspect of the present disclosure, a method for manufacturing an electronic device is provided, wherein the method comprises:

[0005] Providing a supporting plate, wherein the material of the supporting plate is plastic;

[0006] Bonding a glass substrate to the support carrier, wherein the glass substrate is made of ultra-thin glass;

[0007] forming a device layer on the glass substrate;

[0008] The glass substrate is separated from the supporting carrier.

[0009] In one embodiment, bonding the glass substrate to the support carrier includes:

[0010] The glass substrate is bonded to the support carrier through a temporary bonding layer.

[0011] In one possible implementation, the bonding force between the temporary bonding layer and the support carrier is greater than the bonding force between the temporary bonding layer and the glass substrate.

[0012] In one embodiment, the bonding force between the temporary bonding layer and the support carrier is greater than 2000g;

[0013] The bonding force between the temporary bonding layer and the glass substrate ranges from 350 g to 650 g.

[0014] In one embodiment, the temporary bonding layer has a thickness ranging from 25 to 250 μm.

[0015] In one possible implementation manner, the separating the glass substrate from the supporting carrier includes:

[0016] The temperature range during separation is -5 to -10°C, and the separation time is 5 to 15 minutes.

[0017] In one embodiment, the thickness of the support plate is in the range of 20-200 μm.

[0018] In one embodiment, the glass substrate has a thickness ranging from 30 to 200 μm.

[0019] In one embodiment, the method further comprises:

[0020] Before forming the device layer on the glass substrate, a plurality of through holes are provided in the glass substrate, wherein the through holes penetrate the glass substrate.

[0021] According to a second aspect of the present disclosure, an electronic device is provided, wherein the electronic device is manufactured by the method described in any one of the above embodiments.

[0022] The manufacturing method of the electronic device and the electronic device disclosed in the present invention are achieved by bonding a glass substrate to a supporting carrier plate made of plastic, and then separating the glass substrate from the supporting carrier plate after forming a device layer. Compared with the prior art in which the supporting carrier plate is made of glass, the glass substrate and the supporting carrier plate have the same structure and the same bonding force. In this way, the glass substrate is easily damaged during separation, and the stress of the glass substrate is difficult to release during bonding. In the present invention, the supporting carrier plate is made of plastic, so the temporary bonding layer subsequently located between the glass substrate and the supporting carrier plate has different adhesion to the two materials. The adhesion between the glass substrate and the temporary bonding layer is weaker, and the adhesion between the plastic and the temporary bonding layer is stronger, forming a contrast. Therefore, the glass substrate will be relatively unaffected during separation.

[0023] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present disclosure, nor is it intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The above and other objects, features and advantages of the exemplary embodiments of the present disclosure will become readily understood by reading the detailed description below with reference to the accompanying drawings. In the accompanying drawings, several embodiments of the present disclosure are shown in an exemplary and non-limiting manner, in which:

[0025] In the drawings, the same or corresponding reference numerals represent the same or corresponding parts.

[0026] Figure 1 A flowchart of a method for manufacturing an electronic device provided in an embodiment of the present disclosure;

[0027] Figure 2a to Figure 2d A schematic diagram of the electronic device during the manufacturing process provided by an embodiment of the present disclosure. DETAILED DESCRIPTION

[0028] In order to make the purpose, features, and advantages of the present disclosure more obvious and easy to understand, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present disclosure.

[0029] The present disclosure provides a method for manufacturing an electronic device. Figure 1 A flowchart of a method for manufacturing an electronic device provided in an embodiment of the present disclosure, such as Figure 1 As shown, the method includes:

[0030] Step 101: providing a support plate, wherein the material of the support plate is plastic;

[0031] Step 102: bonding a glass substrate to a supporting carrier, wherein the material of the glass substrate is ultra-thin glass;

[0032] Step 103: forming a device layer on a glass substrate;

[0033] Step 104: Separate the glass substrate from the supporting carrier.

[0034] The manufacturing method of the flexible connection device provided in the embodiment of the present disclosure is further described in detail below in conjunction with specific embodiments. Figure 2a to Figure 2d A schematic diagram of the electronic device during the manufacturing process provided by an embodiment of the present disclosure.

[0035] First, see Figure 2a , execute step 101, provide a supporting carrier 10, the material of the supporting carrier 10 is plastic.

[0036] After providing the support carrier 10, a glue layer is formed on the support carrier 10, and the glue layer is the temporary bonding layer 30. A release film (not shown in the figure) is formed on the glue layer. Before use, the release film needs to be torn off first, and then the glass substrate is bonded to the support carrier.

[0037] In a preferred embodiment, the material of the support plate 10 may be PET (polyethylene terephthalate).

[0038] The thickness of the support substrate 10 is in the range of 20-200 μm.

[0039] In the embodiment of the present disclosure, plastic with supporting and protective properties is selected as the supporting material of the glass substrate, because plastic can better protect the glass substrate than glass, and plastic will not cause secondary damage when the glass substrate is broken or damaged during transportation and production. The residual bonding rate of the supporting carrier 10 is ≥85%, the tensile strength is >150Mpa, and the elongation at break is ≤200%.

[0040] Then, continue to rub shoulders Figure 2a , perform step 102 to bond the glass substrate 20 to the supporting carrier 10 , where the material of the glass substrate 20 is ultra-thin glass (UTG).

[0041] In one embodiment, bonding the glass substrate 20 to the support carrier 10 includes:

[0042] The glass substrate 20 is bonded to the support carrier 10 via a temporary bonding layer 30 .

[0043] Specifically, the glass substrate 20 is adsorbed on the platform by the vacuum of the upper platform, and the support carrier 10 is adsorbed on the platform by the vacuum of the lower platform. After the product is positioned or the CCD alignment accuracy is calculated, bonding is performed by the roller of the lower platform to ensure the accuracy of the two products during bonding, so that the glass substrate 20 is supported and fully protected, and there should be no bubbles between the support carrier 10 and the glass substrate 20.

[0044] In one embodiment, the glass substrate 20 has a thickness ranging from 30 μm to 200 μm.

[0045] In one embodiment, the thickness of the temporary bonding layer is in the range of 25-250 μm; in a preferred embodiment, the thickness of the temporary bonding layer 30 is in the range of 50-100 μm.

[0046] The main material of the temporary bonding layer 30 is a coupling agent or an adhesive.

[0047] In one embodiment, the bonding force between the temporary bonding layer 30 and the support carrier 10 is greater than the bonding force between the temporary bonding layer 30 and the glass substrate 20 .

[0048] In one embodiment, the bonding force between the temporary bonding layer 30 and the support carrier 10 is greater than 2000 g; the bonding force between the temporary bonding layer 30 and the glass substrate 20 is in the range of 350-650 g.

[0049] Compared with the prior art in which the supporting carrier is made of glass, resulting in the same structure and bonding force between the glass substrate and the supporting carrier, thus the glass substrate is easily damaged during separation and the stress of the glass substrate is difficult to release during bonding, the supporting carrier in the present disclosure is made of plastic, thus the temporary bonding layer between the glass substrate and the supporting carrier has different bonding forces to the two materials, the bonding force between the glass substrate and the temporary bonding layer is weaker, and the bonding force between the supporting carrier and the temporary bonding layer is stronger, forming a contrast, so the glass substrate will be relatively unaffected during separation.

[0050] Next, see Figure 2b The method further includes: before forming the device layer on the glass substrate 20 , setting a plurality of through holes 201 in the glass substrate 20 , wherein the through holes 201 penetrate the glass substrate 20 .

[0051] The through hole 201 is filled with a conductive material to connect device layers subsequently formed on opposite sides of the glass substrate 20. The conductive material includes, but is not limited to, copper.

[0052] Next, see Figure 2c , perform step 103 to form a device layer 40 on the glass substrate 20 .

[0053] The device layer 40 may be a metal circuit layer.

[0054] Specifically, metal is sputtered on the glass substrate 20 to form a metal layer. The metal layer material can be at least one of aluminum, molybdenum, silver, chromium, nickel, titanium and copper, or a superposition of several of them, with a thickness of 200 to 3000nm; circuits are made on the metal layer, using a TFT yellow light process, sputtering metal, exposing, developing, etching, stripping, and processing to form multiple metal circuits, and the spacing between adjacent metal circuits ranges from 4 to 8μm.

[0055] Next, see Figure 2d , perform step 104 to separate the glass substrate 20 from the supporting carrier 10 .

[0056] In one embodiment, separating the glass substrate 20 from the supporting carrier 10 includes:

[0057] The temperature range during separation is -5 to -10°C, and the separation time is 5 to 15 minutes.

[0058] It needs to be explained that Figure 2d In the illustrated embodiment, the device layer 40 is formed on only one side of the glass substrate 20 . In other embodiments, the device layer may also be formed on the other side of the glass substrate 20 .

[0059] The embodiments of the present disclosure also provide an electronic device, wherein the electronic device is manufactured by any one of the methods in the above embodiments.

[0060] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps recorded in this disclosure can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solutions disclosed in this disclosure can be achieved, and this document does not limit this.

[0061] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0062] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A method for manufacturing an electronic device, characterized in that: The method comprises: Providing a supporting plate, wherein the material of the supporting plate is plastic; Bonding a glass substrate to the support carrier, wherein the glass substrate is made of ultra-thin glass; forming a device layer on the glass substrate; The glass substrate is separated from the supporting carrier.

2. The method according to claim 1, characterized in that The step of bonding the glass substrate to the support carrier includes: The glass substrate is bonded to the support carrier through a temporary bonding layer.

3. The method according to claim 2, characterized in that The bonding force between the temporary bonding layer and the supporting carrier is greater than the bonding force between the temporary bonding layer and the glass substrate.

4. The method according to claim 2, characterized in that: The bonding force between the temporary bonding layer and the support carrier is greater than 2000g; The bonding force between the temporary bonding layer and the glass substrate ranges from 350 g to 650 g.

5. The method according to claim 2, characterized in that: The thickness of the temporary bonding layer is in the range of 25-250 μm.

6. The method according to claim 1, characterized in that The step of separating the glass substrate from the supporting carrier includes: The temperature range during separation is -5 to -10°C, and the separation time is 5 to 15 minutes.

7. The method according to claim 1, characterized in that The thickness of the support plate is in the range of 20-200 μm.

8. The method according to claim 1, characterized in that The glass substrate has a thickness ranging from 30 to 200 μm.

9. The method according to claim 1, characterized in that: The method further comprises: Before forming the device layer on the glass substrate, a plurality of through holes are provided in the glass substrate, wherein the through holes penetrate the glass substrate.

10. An electronic device, characterized in that: The electronic device is manufactured by the method according to any one of claims 1 to 9.

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