Optical sensor packaging structure and manufacturing method thereof

Abstract

The invention discloses an optical sensor packaging structure and a manufacturing method thereof, and the manufacturing method comprises the steps: enabling a light source and a photoelectric element to be respectively pasted on the upper surface of a first carrier plate; forming a non-light-transmitting material layer of a plastic package light source and a photoelectric element on the upper surface of the first carrier plate; forming a first rewiring layer and a first patch pin electrically connected with the first rewiring layer in the non-transparent material layer, and forming a second rewiring layer and a second patch pin electrically connected with the second rewiring layer; forming a light-transmitting material layer on the first surface of the non-light-transmitting material layer, the first functional surface of the light source and the second functional surface of the photoelectric element; and forming a third rewiring layer electrically connected with the first rewiring layer and the first functional surface of the light source in the light-transmitting material layer, and forming a fourth rewiring layer electrically connected with the second rewiring layer and the second functional surface of the photoelectric element in the light-transmitting material layer. According to the method, the cost of the optical sensor packaging structure is reduced, and the size of the optical sensor packaging structure is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of optical sensor packaging, and in particular to an optical sensor packaging structure and a manufacturing method thereof. Background Art

[0002] Optical sensors are sensors that use optical principles for measurement and control. They have the advantages of non-contact, non-destructive, high-speed, high-precision, and anti-interference. They are widely used in industry, medical, biometrics, automobiles, consumer electronics and other fields. With the development of emerging industries such as the Internet of Things, smart manufacturing, smart cities, and smart devices, the market demand and technological innovation of optical sensors are increasing, and it is expected to maintain a steady growth trend in the next few years. According to the type of optical sensors, they can be divided into extrinsic optical sensors and intrinsic optical sensors. Extrinsic optical sensors refer to sensors that separate the light source and the photoelectric element, and transmit and receive light signals through optical channels. Intrinsic optical sensors refer to sensors that integrate the light source and the photoelectric element together, and convert the light signal into an electrical signal through optical elements. Among them, there are currently two main packaging processes for intrinsic optical sensors. One is to use a light-transmitting material to plastic-encapsulate the light source and the photoelectric element on the substrate, and then use a cutting device to cut the light-transmitting material between the light source and the photoelectric element to form a groove, and then use a non-light-transmitting material to separate the light source and the photoelectric element by dispensing filling or secondary plastic sealing to reduce light interference. Another method is to use a special-shaped plastic encapsulation mold to wrap the light source and optoelectronic components in two cavities and encapsulate them on the substrate, and then use non-transparent materials to separate the light source and optoelectronic components by dispensing filling or secondary plastic encapsulation to reduce light interference. These two solutions have the following defects: in order to prevent the metal bonding between the chip and the substrate from affecting the transmission and reception of optical signals, the metal bonding needs to avoid the position of the light source and the signal receiving end, and the line width and line spacing capability of the substrate is required to be high, which leads to the need for optical sensors to use expensive substrates as carriers, resulting in high product material costs; the design of special-shaped structures needs to consider the feasibility of mold processing. If the cavity is too small, mold processing cannot be achieved. Increasing the volume of the cavity will increase the size of the sensor, which does not conform to the trend of miniaturization of semiconductor components. Summary of the invention

[0003] The purpose of the present application is to provide an optical sensor packaging structure and a manufacturing method thereof, so as to reduce the cost of the optical sensor packaging structure, reduce the overall size of the optical sensor packaging structure, and comply with the trend of miniaturization of packaging. In order to achieve the above-mentioned purpose, an embodiment of the present application provides, on the one hand, a method for manufacturing an optical sensor packaging structure, comprising: providing a first carrier board; Providing a light source and an optoelectronic element, wherein the light source includes a first functional surface and a first back surface opposite to each other, and the optoelectronic element includes a second functional surface and a second back surface opposite to each other; Mounting the light source and the photoelectric element on the upper surface of the first carrier board respectively, with the first functional surface and the second functional surface facing the upper surface of the first carrier board; A non-light-transmitting material layer for encapsulating the light source and the photoelectric element is formed on the upper surface of the first carrier, wherein the non-light-transmitting material layer includes a first surface and a second surface opposite to each other, and the first surface is coplanar with the first functional surface of the light source, and the second surface is the surface of the non-light-transmitting material layer away from the first functional surface of the light source; A first redistribution layer and a first patch pin electrically connected to the first redistribution layer, and a second redistribution layer and a second patch pin electrically connected to the second redistribution layer are formed in the non-light-transmitting material layer, and the second surface of the non-light-transmitting material layer exposes surfaces of the first patch pin and the second patch pin that are away from the first functional surface of the light source, and the first surface of the non-light-transmitting material layer exposes one end surface of the first redistribution layer that is not connected to the first patch pin, and exposes one end surface of the second redistribution layer that is not connected to the second patch pin; Removing the first carrier board to expose the first functional surface of the light source, the second functional surface of the optoelectronic element, and the first surface of the non-light-transmitting material layer; Forming a light-transmitting material layer that plastic-encapsulates the first surface of the non-light-transmitting material layer, the first functional surface of the light source, and the second functional surface of the photoelectric element; A third redistribution layer electrically connected to the first redistribution layer and the first functional surface of the light source and a fourth redistribution layer electrically connected to the second redistribution layer and the second functional surface of the optoelectronic element are formed in the light-transmitting material layer.

[0004] In some embodiments, the non-light-transmitting material layer includes a first non-light-transmitting material layer and a second non-light-transmitting material layer located on a surface of the first non-light-transmitting material layer away from the first back surface.

[0005] In some embodiments, the formation process of the first redistribution layer, the second redistribution layer, the first patch pin and the second patch pin includes: forming a first non-light-transmitting material layer for plastic-sealing the light source and the optoelectronic element, the surface of the first non-light-transmitting material layer close to the first functional surface being the first surface; forming a first opening penetrating the thickness of the first non-light-transmitting material layer in the first non-light-transmitting material layer on the side of the light source, and forming a second opening penetrating the thickness of the first non-light-transmitting material layer in the first non-light-transmitting material layer on the side of the optoelectronic element; forming a first redistribution layer in the first opening and on a portion of the surface of the first non-light-transmitting material layer away from the first functional surface, and forming a second redistribution layer in the second opening A second redistribution layer is formed in the first non-light-transmitting material layer and on a portion of the surface away from the second functional surface; a second non-light-transmitting material layer covering the first redistribution layer and the second redistribution layer is formed on a surface away from the first functional surface of the first non-light-transmitting material layer, and a surface of the second non-light-transmitting layer away from the first back surface is the second surface; a third opening is formed in the second non-light-transmitting material layer to expose the portion of the first redistribution layer, and a fourth opening is formed in the second non-light-transmitting material layer to expose the portion of the second redistribution layer; a first patch pin is formed in the third opening and on a portion of the second surface, and a second patch pin is formed in the fourth opening and on a portion of the second surface.

[0006] In some embodiments, the first non-light-transmitting material layer and the second non-light-transmitting material layer are made of non-light-transmitting resin materials.

[0007] In some embodiments, the first non-light-transmitting material layer is etched by a laser etching process to form the first opening and the second opening in the first non-light-transmitting material layer; and the second non-light-transmitting material layer is etched by a laser etching process to form the third opening and the fourth opening in the second non-light-transmitting material layer.

[0008] In some embodiments, at least a portion of the first redistribution layer is located directly above a first back surface of the light source; and at least a portion of the second redistribution layer is located directly above a second back surface of the optoelectronic element.

[0009] In some embodiments, the light-transmitting material layer includes a first light-transmitting material layer and a second light-transmitting material layer located on a surface of the first light-transmitting material layer away from the first functional surface; before forming the light-transmitting material layer, a second carrier is mounted on the second surface of the non-light-transmitting material layer.

[0010] In some embodiments, the formation process of the third redistribution layer and the fourth redistribution layer includes: forming a first light-transmitting material layer on the first surface of the non-light-transmitting material layer, the first functional surface of the light source, and the second functional surface of the optoelectronic element; forming a fifth opening, a sixth opening, a seventh opening, and an eighth opening in the first light-transmitting material layer that penetrate the thickness of the first light-transmitting material layer, and the fifth opening exposes an end surface of the first redistribution layer that is not connected to the first patch pin, the sixth opening exposes a portion of the first functional surface of the light source, the seventh opening exposes an end surface of the second redistribution layer that is not connected to the second patch pin, and the eighth opening exposes a portion of the second functional surface of the optoelectronic element; forming a third redistribution layer in the fifth opening, the sixth opening, and a portion of the surface of the first light-transmitting material layer away from the first functional surface, and forming a fourth redistribution layer in the seventh opening, the eighth opening, and a portion of the surface of the first light-transmitting material layer away from the first functional surface; forming a second light-transmitting material layer covering the third redistribution layer and the fourth redistribution layer on the surface of the first light-transmitting material layer away from the first functional surface.

[0011] In some embodiments, the first light-transmitting material layer and the second light-transmitting material layer are made of light-transmitting resin materials.

[0012] In some embodiments, the first non-light-transmitting material layer is etched by a laser etching process to form the fifth opening, the sixth opening, the seventh opening and the eighth opening in the first non-light-transmitting material layer.

[0013] In some embodiments, the method further includes: forming a light-blocking structure in the light-transmitting material layer between the light source and the optoelectronic element.

[0014] In some embodiments, the material of the light blocking structure is ink.

[0015] In some embodiments, the first carrier board includes a plurality of packaging areas and cutting road areas between the packaging areas; the light source and the optoelectronic element are mounted in each of the packaging areas, and the non-light-transmitting material layer, the first redistribution layer, the second redistribution layer, the first patch pin, the second patch pin, the light-transmitting material layer, the third redistribution layer and the fourth redistribution layer are formed in each of the packaging areas; cutting is performed along the cutting road areas to form a plurality of discrete optical sensor packaging structures.

[0016] On the other hand, the embodiment of the present application further provides an optical sensor packaging structure, including: A light source and an optoelectronic element, wherein the light source comprises a first functional surface and a first back surface opposite to each other, and the optoelectronic element comprises a second functional surface and a second back surface opposite to each other; A non-light-transmitting material layer for plastic-sealing the light source and the photoelectric element, wherein the non-light-transmitting material layer comprises a first surface and a second surface opposite to each other, and the first surface exposes the first functional surface and the second functional surface, and the second surface is a surface of the non-light-transmitting material layer away from the first functional surface of the light source; A first redistribution layer located in the non-light-transmitting material layer and a first patch pin electrically connected to the first redistribution layer, and a second redistribution layer located in the non-light-transmitting material layer and a second patch pin electrically connected to the second redistribution layer, wherein the second surface of the non-light-transmitting material layer exposes surfaces of the first patch pin and the second patch pin away from the first functional surface, and the first surface of the non-light-transmitting material layer exposes an end surface of the first redistribution layer not connected to the first patch pin and an end surface of the second redistribution layer not connected to the second patch pin; A light-transmitting material layer that plastic-encapsulates the first surface of the non-light-transmitting material layer, the first functional surface of the light source, and the second functional surface of the photoelectric element; a third redistribution layer in the light-transmitting material layer electrically connected to the first redistribution layer and the first functional surface of the light source, and a fourth redistribution layer in the light-transmitting material layer electrically connected to the second redistribution layer and the second functional surface of the optoelectronic element.

[0017] In some embodiments, it further includes: a light-blocking structure in the light-transmitting material layer between the light source and the optoelectronic element.

[0018] In some embodiments, the first functional surface of the light source includes a light-emitting area and a first external terminal located on one side of the light-emitting area; the second functional surface of the photoelectric element includes a photosensitive area and a second external terminal located on one side of the photosensitive area; the electrical connection between the third redistribution layer and the first functional surface of the light source includes: the third redistribution layer is electrically connected to the first external terminal; the electrical connection between the fourth redistribution layer and the second functional surface of the photoelectric element includes: the fourth redistribution layer is electrically connected to the second external terminal.

[0019] Beneficial effects of this application: The optical sensor packaging structure and manufacturing method of the present application, the manufacturing method, after the light source and the photoelectric element are respectively mounted on the upper surface of the first carrier board, and the first functional surface and the second functional surface face the upper surface of the first carrier board, a non-light-transmitting material layer for plastic-sealing the light source and the photoelectric element is formed on the upper surface of the first carrier board, the non-light-transmitting material layer includes a first surface and a second surface opposite to each other, and the first surface is coplanar with the first functional surface of the light source, and the second surface is the surface of the non-light-transmitting material layer away from the first functional surface of the light source; a first redistribution layer and a first patch pin electrically connected to the first redistribution layer are formed in the non-light-transmitting material layer, and a second redistribution layer and a first patch pin electrically connected to the second redistribution layer are formed The second patch pin of the non-light-transmitting material layer is exposed on the second surface of the first patch pin and the second patch pin away from the first functional surface of the light source, and the first surface of the non-light-transmitting material layer exposes the end surface of the first redistribution layer that is not connected to the first patch pin and the end surface of the second redistribution layer that is not connected to the second patch pin; a light-transmitting material layer is formed to plastic-encapsulate the first surface of the non-light-transmitting material layer, the first functional surface of the light source and the second functional surface of the photoelectric element; a third redistribution layer electrically connected to the first redistribution layer and the first functional surface of the light source is formed in the light-transmitting material layer, and a fourth redistribution layer electrically connected to the second redistribution layer and the second functional surface of the photoelectric element is formed. That is, the manufacturing method of the aforementioned optical sensor packaging structure in this application adopts a board-level packaging process, and through multiple plastic packaging processes and redistribution processes, it is realized that the use of cheap plastic packaging materials replaces the expensive substrate, thereby achieving the purpose of reducing the cost of the optical sensor packaging structure. In addition, the use of multiple plastic packaging solutions to replace the design of special-shaped structure molds can reduce the overall size of the optical sensor packaging structure, which conforms to the trend of miniaturization of packaging. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1-Figure 15 Schematic diagram of the structure of the optical sensor packaging structure at various stages of the manufacturing process in some embodiments of the present application. DETAILED DESCRIPTION

[0020] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0021] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0022] On the one hand, an embodiment of the present application provides a method for manufacturing an optical sensor packaging structure. Figure 1-Figure 14 The following is a schematic diagram of the structure of the optical sensor packaging structure in various stages of the manufacturing process in some embodiments of the present application. Figure 1-Figure 14 The manufacturing method of the optical sensor packaging structure is described in detail.

[0023] refer to Figure 1 , providing a first carrier board 101; referring to Figure 2 , providing a light source 201 and a photoelectric element 202, wherein the light source 201 includes a first functional surface and a first back surface opposite to each other, and the photoelectric element 202 includes a second functional surface and a second back surface opposite to each other, and the light source 201 and the photoelectric element 202 are respectively mounted on the upper surface of the first carrier 101, and the first functional surface and the second functional surface face the upper surface of the first carrier 101; The first carrier 101 serves as a supporting body in the subsequent process, and the first carrier 101 may include an upper surface and a lower surface relative to each other. The first carrier 101 may be a silicon carrier or a glass carrier. In some embodiments, the upper surface of the first carrier 101 has a first temporary bonding layer 102, and the first temporary bonding layer 102 may be, for example, an adhesive, and the first temporary bonding layer 102 is used to adhere and fix the light source 201 and the photoelectric element 202 when the light source 201 and the photoelectric element 202 are respectively mounted on the upper surface of the first carrier 101. The first temporary bonding layer 102 and the first carrier 101 may be removed later by a debonding process.

[0024] The optical sensor packaging structure subsequently formed in this application can be applied to multiple fields. Specifically, the optical sensor packaging structure can be used for environmental perception and obstacle avoidance, such as the optical sensor packaging structure real-time perception of the surrounding environment, including terrain and obstacles; the optical sensor packaging structure can also be used for image acquisition and processing, the optical sensor packaging structure captures image information in the external environment and converts these image information into digital signals; the optical sensor packaging structure can also be used for motion detection and positioning, such as the optical sensor packaging structure can be used to detect the existence, position, speed, etc. of an object; the optical sensor packaging structure can also be used for environmental monitoring, such as the optical sensor packaging structure can be used to detect various pollutants and harmful substances in environmental media such as air, water, and soil; the optical sensor packaging structure can also be used for medical diagnosis, such as the optical sensor packaging structure can be used to detect and measure various physiological signals and pathological states of the human body, such as non-invasive body temperature measurement, measurement of oxygen content in blood, etc. In some embodiments, the optical sensor packaging structure can be specifically an infrared sensor, a photoelectric sensor packaging structure, a laser sensor packaging structure, a visual sensor packaging structure, an optical fiber sensor packaging structure, an image sensor packaging structure, or a TOF sensor packaging structure.

[0025] The optical element 202 is used to receive the light signal reflected by the target and convert it into an electrical signal, so as to measure and control various physical quantities of the target. The light source 201 is used to emit a light signal to the target or outward, and the light signal can be used as a detection light signal or an illumination light signal for the optical sensor packaging structure. The light signal is reflected by the target and then received by the optical element 202.

[0026] The light source 201 includes a first functional surface and a first back surface opposite to each other. In some embodiments, the first functional surface may include a light-emitting area and a first external terminal located on one side of the light-emitting area. The first external terminal is at least used to provide an operating voltage to the light-emitting area. The light-emitting area emits a light signal to a target or outward under the action of the operating voltage. The photoelectric element 202 includes a second functional surface and a second back surface opposite to each other. In some embodiments, the second functional surface includes a photosensitive area and a second external terminal located on one side of the photosensitive area. The photosensitive area is used to receive a light signal reflected by a target and convert it into an electrical signal. The second external terminal is at least used to transmit the electrical signal sensed by the photosensitive area out of the photoelectric element 202. In some embodiments, the first external terminal and the second external terminal may be pads, and the first functional surface and the second functional surface expose the corresponding pads.

[0027] In some embodiments, the first carrier 101 includes several packaging areas (not marked in the figure) and cutting road areas (not marked in the figure) located between the packaging areas; the light source 201 and the photoelectric element 202 are mounted in each of the packaging areas, and a non-light-transmitting material layer, a first redistribution layer, a second redistribution layer, a first patch pin, a second patch pin, a light-transmitting material layer, a third redistribution layer and a fourth redistribution layer are subsequently formed in each of the packaging areas (for the specific process, please refer to the description of the corresponding part later); finally, cutting is performed along the cutting road area to form several discrete optical sensor packaging structures. This improves the manufacturing efficiency of the optical sensor packaging structure.

[0028] refer to Figure 8 A non-light-transmitting material layer (103, 108) is formed on the upper surface of the first carrier board 101 to plastic-encapsulate the light source 201 and the photoelectric element 202, the non-light-transmitting material layer (103, 108) comprising a first surface and a second surface opposite to each other, and the first surface is coplanar with the first functional surface of the light source 201, and the second surface is the surface of the non-light-transmitting material layer away from the first functional surface of the light source 201; a first redistribution layer 106 and a first patch pin 111 electrically connected to the first redistribution layer 106 are formed in the non-light-transmitting material layer (103, 108) A second redistribution layer 107 and a second patch pin 112 electrically connected to the second redistribution layer 107 are formed, and the second surface of the non-light-transmitting material layer (103, 108) exposes the first functional surface of the first patch pin 111 and the second patch pin 112 away from the light source 201, and the first surface of the non-light-transmitting material layer (103, 108) exposes an end surface of the first redistribution layer 106 that is not connected to the first patch pin 111 and exposes an end surface of the second redistribution layer 107 that is not connected to the second patch pin 112.

[0029] In some embodiments, the non-light-transmitting material layer (103, 108) includes a first non-light-transmitting material layer 103 and a second non-light-transmitting material layer 108 located on a surface of the first non-light-transmitting material layer 103 away from the first back surface.

[0030] In some embodiments below, Figure 3-Figure 8 The formation process of the first redistribution layer 106 , the second redistribution layer 107 , the first patch pin 111 , and the second patch pin 112 is described in detail.

[0031] First, refer to Figure 3, forming a first non-light-transmitting material layer 103 for encapsulating the light source 201 and the optoelectronic element 202, the surface of the first non-light-transmitting material layer 103 close to the first functional surface is the first surface, the material of the first non-light-transmitting material layer 103 is not light-transmitting, and the first non-light-transmitting material layer 103 is used to protect the light source 201 and the optoelectronic element 202. In some embodiments, the material of the first non-light-transmitting material layer 103 is a non-light-transmitting resin material, so that the material cost of the first non-light-transmitting material layer 103 is relatively low, for example, it can be a non-light-transmitting epoxy resin, a non-light-transmitting polyimide resin, a non-light-transmitting benzocyclobutene resin or a non-light-transmitting polybenzoxazole resin, and the first non-light-transmitting material layer 103 can be formed by injection molding, compression molding or transfer molding.

[0032] Next, refer to Figure 4 A first opening 104 penetrating through the thickness of the first non-light-transmitting material layer 103 is formed in the first non-light-transmitting material layer 103 on the side of the light source 201, and a second opening 105 penetrating through the thickness of the first non-light-transmitting material layer 103 is formed in the first non-light-transmitting material layer 103 on the side of the photoelectric element 202. In some embodiments, the first opening 104 and the second opening 105 may be formed by a laser etching process.

[0033] Next, refer to Figure 5 , in the first opening 104 (reference Figure 4 ) and a portion of the surface of the first non-light-transmissive material layer 103 away from the first functional surface to form a first redistribution layer 106, and in the second opening 105 (reference Figure 4 ) and a portion of the surface of the first non-light-transmissive material layer 103 away from the second functional surface to form a second redistribution layer 107. In some embodiments, the materials of the first redistribution layer 106 and the second redistribution layer 107 include one or more of Al, Cu, Ag, Au, Pt, Ni, Ti, TiN, TaN, Ta, TaC, TaSiN, W, WN, and WSi, and the formation process of the first redistribution layer 106 and the second redistribution layer 107 includes sputtering, electroplating, or coating. In some embodiments, at least a portion of the first redistribution layer 106 is located directly above the first back side of the light source 201, and at least a portion of the second redistribution layer 107 is located directly above the second back side of the optoelectronic element 202, so as to reduce the lateral area of ​​the packaging structure occupied by the first redistribution layer 106 and the second redistribution layer 107, so as to reduce the packaging size of the packaging structure.

[0034] Next, refer to Figure 6, a second non-light-transmitting material layer 108 covering the first redistribution layer 106 and the second redistribution layer 107 is formed on the surface of the first non-light-transmitting material layer 103 away from the first functional surface, the surface of the second non-light-transmitting layer 108 away from the first back surface is the second surface, the material of the second non-light-transmitting material layer 108 is opaque, and the second non-light-transmitting material layer 108 is used to protect the light source 201 and the optoelectronic element 202. In some embodiments, the material of the second non-light-transmitting material layer 108 is a non-light-transmitting resin material, so that the material cost of the second non-light-transmitting material layer 108 is relatively low, for example, it can be a non-light-transmitting epoxy resin, a non-light-transmitting polyimide resin, a non-light-transmitting benzocyclobutene resin or a non-light-transmitting polybenzoxazole resin, and the second non-light-transmitting material layer 108 can be formed by injection molding, compression molding or transfer molding.

[0035] Next, refer to Figure 7 A third opening 109 is formed in the second non-light-transmitting material layer 108 to expose a portion of the first redistribution layer 106, and a fourth opening 110 is formed in the second non-light-transmitting material layer 108 to expose a portion of the second redistribution layer 107. In some embodiments, the third opening 109 and the fourth opening 110 are formed by a laser etching process.

[0036] Next, refer to Figure 8 , in the third opening 109 (reference Figure 7 ) and part of the second surface to form a first patch pin 111, in the fourth opening 109 (reference Figure 7 ) and part of the second surface to form a second patch pin 112, and the first patch pin 111 and the second patch pin 112 of the optical sensor package structure electrically connected to an external device or structure can be redistributed through the first redistribution layer 106 and the second redistribution layer 107 and the subsequently formed third redistribution layer and the fourth redistribution layer. In some embodiments, the material of the first patch pin 111 and the second patch pin 112 includes one or more of Al, Cu, Ag, Au, Pt, Ni, Ti, TiN, TaN, Ta, TaC, TaSiN, W, WN, and WSi, and the formation process of the first patch pin 111 and the second patch pin 112 includes sputtering, electroplating, or coating.

[0037] In some embodiments, after forming the first chip pin 111 and the second chip pin 112, tin can be electroplated on the surface of the first chip pin 111 and the second chip pin 112 to prevent the first chip pin 111 and the second chip pin 112 from being oxidized and to improve welding performance.

[0038] After forming the first patch pin 111 and the second patch pin 112, refer to Fig. 9 , remove the first carrier, expose the first functional surface of the light source 201, the second functional surface of the optoelectronic element 202, and the first surface of the non-light-transmitting material layer (the surface of the first non-light-transmitting material layer 103 close to the first functional surface); bond the second carrier 114 to the second surface of the non-light-transmitting material layer (the surface of the second non-light-transmitting material layer 108 away from the first functional surface) through the second temporary bonding layer 113, and the second carrier 114 can protect the first patch pin 111 and the second patch pin 112, and provide a support platform for subsequent processes. In some embodiments, the second carrier 114 can be a silicon carrier or a glass carrier, and the second temporary bonding layer 113 can be, for example, an adhesive, and the second carrier 114 and the second temporary bonding layer 113 can be removed by a debonding process later.

[0039] refer to Fig.13 , forming a light-transmitting material layer (115, 122) that plastic-encapsulates the first surface of the non-light-transmitting material layer (the surface of the first non-light-transmitting material layer 103 close to the first functional surface), the first functional surface of the light source 201, and the second functional surface of the optoelectronic element 202; forming a third redistribution layer 120 electrically connected to the first redistribution layer 106 and the first functional surface of the light source 201 in the light-transmitting material layer (115, 122), and forming a fourth redistribution layer 121 electrically connected to the second redistribution layer 107 and the second functional surface of the optoelectronic element 202.

[0040] In some embodiments, the light-transmitting material layer (115, 122) includes a first light-transmitting material layer 115 and a second light-transmitting material layer 122 located on a surface of the first light-transmitting material layer 115 away from the first functional surface.

[0041] In some embodiments below, Figure 10-13 The formation process of the third redistribution layer 120 and the fourth redistribution layer 122 is described in detail.

[0042] First, refer to Fig.10A first light-transmitting material layer 115 is formed on the first surface of the non-light-transmitting material layer (the surface of the first non-light-transmitting material layer 103 close to the first functional surface), the first functional surface of the light source 201 and the second functional surface of the photoelectric element 202. The first light-transmitting material layer 115 is a light-transmitting material, which protects the light source 201 and the photoelectric element 201 to ensure the normal transmission and reception of optical signals. In some embodiments, the material of the first light-transmitting material layer 115 is a light-transmitting resin, so that the material cost of the first light-transmitting material layer 115 is relatively low. For example, it can be a light-transmitting epoxy resin, a light-transmitting polyimide resin, a light-transmitting benzocyclobutene resin or a light-transmitting polybenzoxazole resin. The first light-transmitting material layer 115 can be formed by injection molding, compression molding or transfer molding.

[0043] Next, refer to Fig.11 , a fifth opening 116, a sixth opening 117, a seventh opening 118 and an eighth opening 119 are formed in the first light-transmitting material layer 115, which penetrate the thickness of the first light-transmitting material layer 115, and the fifth opening 115 exposes the end surface of the first redistribution layer 106 that is not connected to the first patch pin 111, the sixth opening 117 exposes part of the first functional surface of the light source 201, the seventh opening 118 exposes the end surface of the second redistribution layer 107 that is not connected to the second patch pin 112, and the eighth opening 119 exposes part of the second functional surface of the optoelectronic element 202. In some embodiments, the fifth opening 116, the sixth opening 117, the seventh opening 118 and the eighth opening 119 may be formed by a laser etching process.

[0044] Next, refer to Fig.12 , in the five openings 116 (reference Fig.11 ) in the sixth opening 117 (reference Fig.11 ) and a portion of the surface of the first light-transmitting material layer 115 away from the first functional surface to form a third redistribution layer 120, in the seven openings 118 (reference Fig.11 ) in the eighth opening 119 (reference Fig.11) and a portion of the surface of the first light-transmitting material layer 115 away from the first functional surface to form a fourth redistribution layer 121. In some embodiments, the materials of the third redistribution layer 120 and the fourth redistribution layer 121 include one or more of Al, Cu, Ag, Au, Pt, Ni, Ti, TiN, TaN, Ta, TaC, TaSiN, W, WN, and WSi, and the formation process of the third redistribution layer 120 and the fourth redistribution layer 121 includes sputtering, electroplating, or coating. In some embodiments, the electrical connection between the third redistribution layer 120 and the first functional surface of the light source 201 includes: the third redistribution layer 120 is electrically connected to the first external terminal of the first functional surface of the light source 201; the electrical connection between the fourth redistribution layer 121 and the second functional surface of the optoelectronic element 202 includes: the fourth redistribution layer 121 is electrically connected to the second external terminal of the second functional surface of the optoelectronic element 202.

[0045] Next, refer to Fig.13 , a second light-transmitting material layer 122 covering the third redistribution layer 120 and the fourth redistribution layer 121 is formed on the surface of the first light-transmitting material layer 115 away from the first functional surface, and the second light-transmitting material layer 122 is a light-transmitting material, which protects the light source 201 and the optoelectronic element 202 while ensuring the normal transmission and reception of optical signals. In some embodiments, the material of the second light-transmitting material layer 122 is a light-transmitting resin, so that the material cost of the second light-transmitting material layer 122 is relatively low, for example, it can be a light-transmitting epoxy resin, a light-transmitting polyimide resin, a light-transmitting benzocyclobutene resin or a light-transmitting polybenzoxazole resin, and the second light-transmitting material layer 122 can be formed by injection molding, compression molding or transfer molding.

[0046] In some embodiments, reference Fig.14 , further comprising: forming a light-blocking structure 123 in the light-transmitting material layer (115, 122) between the light source 201 and the photoelectric element 202, the light-blocking structure being used to isolate the light signal between the light source 201 and the photoelectric element 202 to prevent light interference. In some embodiments, the material of the light-blocking structure is ink. In some embodiments, the formation process of the light-blocking structure 123 comprises: forming a groove penetrating the thickness of the light-transmitting material layer (115, 122) by laser etching; and printing and filling ink in the groove to form the light-blocking structure 123.

[0047] In one embodiment, reference Fig.15, when the first carrier includes a plurality of packaging areas and a cutting path area between the packaging areas; the light source 201 and the optoelectronic element 202 are mounted in each of the packaging areas, and after the non-light-transmitting material layer (103, 108), the first redistribution layer 106, the second redistribution layer 107, the first patch pin 111, the second patch pin 112, the light-transmitting material layer (115, 122), the third redistribution layer 120 and the fourth redistribution layer 123 are formed in each of the packaging areas, cutting is performed along the cutting path area to form a plurality of discrete optical sensor packaging structures. Fig.15 The formation of two discrete optical sensor packaging structures is taken as an example for explanation.

[0048] The manufacturing method of the optical sensor packaging structure mentioned above in the present application adopts a board-level packaging process. Through multiple plastic sealing processes and rewiring processes, it can use cheap plastic sealing materials to replace the expensive substrate, thereby achieving the purpose of reducing the cost of the optical sensor packaging structure. In addition, the use of multiple plastic sealing solutions to replace the design of special-shaped structure molds can reduce the overall size of the optical sensor packaging structure and comply with the trend of miniaturization of packaging.

[0049] Another aspect of the present application embodiment further provides an optical sensor packaging structure, Fig.14 or Fig.15 ,include: A light source 201 and an optoelectronic element 202, wherein the light source 201 includes a first functional surface and a first back surface opposite to each other, and the optoelectronic element 202 includes a second functional surface and a second back surface opposite to each other; A non-light-transmitting material layer (103, 108) for plastic-sealing the light source 201 and the photoelectric element 202, wherein the non-light-transmitting material layer (103, 108) comprises a first surface and a second surface opposite to each other, and the first surface exposes the first functional surface and the second functional surface; A first redistribution layer 106 located in the non-light-transmitting material layer (103, 108) and a first patch pin 111 electrically connected to the first redistribution layer 106, and a second redistribution layer 107 located in the non-light-transmitting material layer (103, 108) and a second patch pin 112 electrically connected to the second redistribution layer 107, wherein the second surface of the non-light-transmitting material layer (103, 108) exposes the surface of the first patch pin 111 and the second patch pin 112 away from the first functional surface, and the first surface of the non-light-transmitting material layer (103, 108) exposes an end surface of the first redistribution layer 106 that is not connected to the first patch pin 111 and an end surface of the second redistribution layer 107 that is not connected to the second patch pin 112; A light-transmitting material layer (115, 122) that plastic-encapsulates the first surface of the non-light-transmitting material layer (103, 108), the first functional surface of the light source 201, and the second functional surface of the photoelectric element 202; A third redistribution layer 120 located in the light-transmitting material layer (115, 122) and electrically connected to the first redistribution layer 106 and the first functional surface of the light source 201; and a fourth redistribution layer 121 located in the light-transmitting material layer (115, 122) and electrically connected to the second redistribution layer 107 and the second functional surface of the optoelectronic element 202.

[0050] In some embodiments, the present invention further includes: a light blocking structure 123 located in the light-transmitting material layer between the light source 201 and the optoelectronic element 202 .

[0051] In some embodiments, the first functional surface of the light source 201 includes a light-emitting area and a first external terminal located on one side of the light-emitting area; the second functional surface of the photoelectric element 202 includes a photosensitive area and a second external terminal located on one side of the photosensitive area; the electrical connection between the third redistribution layer 120 and the first functional surface of the light source 201 includes: the third redistribution layer 120 is electrically connected to the first external terminal of the first functional surface of the light source 201; the electrical connection between the fourth redistribution layer 120 and the second functional surface of the photoelectric element 202 includes: the fourth redistribution layer 120 is electrically connected to the second external terminal of the second functional surface of the photoelectric element 202.

[0052] Although the present application has been disclosed as above in the form of a preferred embodiment, it is not intended to limit the present application. Any technical personnel in this field can make possible changes and modifications to the technical solution of the present application by using the methods and technical contents disclosed above without departing from the spirit and scope of the present application. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are within the protection scope of the technical solution of the present application.

Claims

1. A method for manufacturing an optical sensor packaging structure, characterized in that: include: providing a first carrier board; Providing a light source and an optoelectronic element, wherein the light source includes a first functional surface and a first back surface opposite to each other, and the optoelectronic element includes a second functional surface and a second back surface opposite to each other; Mounting the light source and the photoelectric element on the upper surface of the first carrier board respectively, with the first functional surface and the second functional surface facing the upper surface of the first carrier board; A non-light-transmitting material layer for encapsulating the light source and the photoelectric element is formed on the upper surface of the first carrier, wherein the non-light-transmitting material layer includes a first surface and a second surface opposite to each other, and the first surface is coplanar with the first functional surface of the light source, and the second surface is the surface of the non-light-transmitting material layer away from the first functional surface of the light source; A first redistribution layer and a first patch pin electrically connected to the first redistribution layer, and a second redistribution layer and a second patch pin electrically connected to the second redistribution layer are formed in the non-light-transmitting material layer, and the second surface of the non-light-transmitting material layer exposes surfaces of the first patch pin and the second patch pin that are away from the first functional surface of the light source, and the first surface of the non-light-transmitting material layer exposes one end surface of the first redistribution layer that is not connected to the first patch pin, and exposes one end surface of the second redistribution layer that is not connected to the second patch pin; Removing the first carrier board to expose the first functional surface of the light source, the second functional surface of the optoelectronic element, and the first surface of the non-light-transmitting material layer; Forming a light-transmitting material layer that plastic-encapsulates the first surface of the non-light-transmitting material layer, the first functional surface of the light source, and the second functional surface of the photoelectric element; A third redistribution layer electrically connected to the first redistribution layer and the first functional surface of the light source and a fourth redistribution layer electrically connected to the second redistribution layer and the second functional surface of the optoelectronic element are formed in the light-transmitting material layer.

2. The method for manufacturing an optical sensor packaging structure according to claim 1, characterized in that: The non-light-transmitting material layer includes a first non-light-transmitting material layer and a second non-light-transmitting material layer located on a surface of the first non-light-transmitting material layer away from the first back surface.

3. The method for manufacturing an optical sensor packaging structure according to claim 2, characterized in that: The formation process of the first redistribution layer, the second redistribution layer, the first patch pin and the second patch pin includes: forming a first non-light-transmitting material layer for plastic-sealing the light source and the optoelectronic element, the surface of the first non-light-transmitting material layer close to the first functional surface being the first surface; forming a first opening penetrating the thickness of the first non-light-transmitting material layer in the first non-light-transmitting material layer on the side of the light source, and forming a second opening penetrating the thickness of the first non-light-transmitting material layer in the first non-light-transmitting material layer on the side of the optoelectronic element; forming a first redistribution layer in the first opening and on a portion of the surface of the first non-light-transmitting material layer away from the first functional surface, and forming a second redistribution layer in the second opening and on a portion of the surface of the first non-light-transmitting material layer away from the first functional surface. A second redistribution layer is formed on a portion of the surface of the first non-light-transmitting material layer away from the second functional surface; a second non-light-transmitting material layer covering the first redistribution layer and the second redistribution layer is formed on a surface of the first non-light-transmitting material layer away from the first functional surface, and a surface of the second non-light-transmitting layer away from the first back surface is the second surface; a third opening is formed in the second non-light-transmitting material layer to expose the portion of the first redistribution layer, and a fourth opening is formed in the second non-light-transmitting material layer to expose the portion of the second redistribution layer; a first patch pin is formed in the third opening and on a portion of the second surface, and a second patch pin is formed in the fourth opening and on a portion of the second surface.

4. The method for manufacturing an optical sensor packaging structure according to claim 2, characterized in that: The first non-light-transmitting material layer and the second non-light-transmitting material layer are made of non-light-transmitting resin materials.

5. The method for manufacturing an optical sensor packaging structure according to claim 3, characterized in that: The first non-light-transmitting material layer is etched by a laser etching process to form the first opening and the second opening in the first non-light-transmitting material layer; the second non-light-transmitting material layer is etched by a laser etching process to form the third opening and the fourth opening in the second non-light-transmitting material layer.

6. The method for manufacturing an optical sensor packaging structure according to claim 2, characterized in that: At least a portion of the first redistribution layer is located directly above the first back surface of the light source; at least a portion of the second redistribution layer is located directly above the second back surface of the photoelectric element.

7. The method for manufacturing an optical sensor packaging structure according to claim 1, characterized in that: The light-transmitting material layer includes a first light-transmitting material layer and a second light-transmitting material layer located on a surface of the first light-transmitting material layer away from the first functional surface; before forming the light-transmitting material layer, a second carrier is mounted on the second surface of the non-light-transmitting material layer.

8. The method for manufacturing an optical sensor packaging structure according to claim 7, characterized in that: The formation process of the third redistribution layer and the fourth redistribution layer includes: forming a first light-transmitting material layer on the first surface of the non-light-transmitting material layer, the first functional surface of the light source and the second functional surface of the optoelectronic element; forming a fifth opening, a sixth opening, a seventh opening and an eighth opening in the first light-transmitting material layer that penetrate the thickness of the first light-transmitting material layer, and the fifth opening exposes an end surface of the first redistribution layer that is not connected to the first patch pin, the sixth opening exposes a portion of the first functional surface of the light source, the seventh opening exposes an end surface of the second redistribution layer that is not connected to the second patch pin, and the eighth opening exposes a portion of the second functional surface of the optoelectronic element; forming a third redistribution layer in the fifth opening, the sixth opening and a portion of the surface of the first light-transmitting material layer away from the first functional surface, and forming a fourth redistribution layer in the seventh opening, the eighth opening and a portion of the surface of the first light-transmitting material layer away from the first functional surface; forming a second light-transmitting material layer covering the third redistribution layer and the fourth redistribution layer on the surface of the first light-transmitting material layer away from the first functional surface.

9. The method for manufacturing an optical sensor packaging structure according to claim 8, characterized in that: The first light-transmitting material layer and the second light-transmitting material layer are made of light-transmitting resin materials.

10. The method for manufacturing an optical sensor packaging structure according to claim 9, characterized in that: The first non-light-transmitting material layer is etched by a laser etching process to form the fifth opening, the sixth opening, the seventh opening and the eighth opening in the first non-light-transmitting material layer.

11. The method for manufacturing an optical sensor packaging structure according to claim 1, characterized in that: Also includes: A light-blocking structure is formed in the light-transmitting material layer between the light source and the optoelectronic element.

12. The method for manufacturing an optical sensor packaging structure according to claim 11, characterized in that: The material of the light blocking structure is ink.

13. The method for manufacturing an optical sensor packaging structure according to claim 1, characterized in that: The first carrier board includes a plurality of packaging areas and cutting road areas between the packaging areas; the light source and the optoelectronic element are mounted in each of the packaging areas, and the non-light-transmitting material layer, the first redistribution layer, the second redistribution layer, the first patch pin, the second patch pin, the light-transmitting material layer, the third redistribution layer and the fourth redistribution layer are formed in each of the packaging areas; cutting is performed along the cutting road areas to form a plurality of discrete optical sensor packaging structures.

14. An optical sensor packaging structure, comprising: A light source and an optoelectronic element, wherein the light source comprises a first functional surface and a first back surface opposite to each other, and the optoelectronic element comprises a second functional surface and a second back surface opposite to each other; A non-light-transmitting material layer for plastic-sealing the light source and the optoelectronic element, wherein the non-light-transmitting material layer comprises a first surface and a second surface opposite to each other, and the first surface exposes the first functional surface and the second functional surface, and the second surface is a surface of the non-light-transmitting material layer away from the first functional surface; A first redistribution layer located in the non-light-transmitting material layer and a first patch pin electrically connected to the first redistribution layer, and a second redistribution layer located in the non-light-transmitting material layer and a second patch pin electrically connected to the second redistribution layer, wherein the second surface of the non-light-transmitting material layer exposes surfaces of the first patch pin and the second patch pin away from the first functional surface, and the first surface of the non-light-transmitting material layer exposes an end surface of the first redistribution layer not connected to the first patch pin and an end surface of the second redistribution layer not connected to the second patch pin; Plastic-sealing the first surface of the non-light-transmitting material layer, the first functional surface of the light source, and the light-transmitting material layer on the second functional surface of the photoelectric element; a third redistribution layer in the light-transmitting material layer electrically connected to the first redistribution layer and the first functional surface of the light source, and a fourth redistribution layer in the light-transmitting material layer electrically connected to the second redistribution layer and the second functional surface of the optoelectronic element.

15. The optical sensor packaging structure according to claim 14, characterized in that: Also includes: A light-blocking structure in the light-transmitting material layer between the light source and the optoelectronic element.

16. The method for manufacturing an optical sensor packaging structure according to claim 14, wherein the first functional surface of the light source comprises a light-emitting area and a first external terminal located at one side of the light-emitting area; the second functional surface of the photoelectric element comprises a photosensitive area and a second external terminal located at one side of the photosensitive area; The electrical connection between the third redistribution layer and the first functional surface of the light source includes: the third redistribution layer is electrically connected to the first external terminal; the electrical connection between the fourth redistribution layer and the second functional surface of the optoelectronic element includes: the fourth redistribution layer is electrically connected to the second external terminal.

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