Substrate processing method and substrate processing system

Abstract

The present disclosure provides a substrate processing method and a substrate processing system capable of improving productivity. The substrate processing method includes: a step (A) of preparing a substrate having an electrode array in which a plurality of electrodes are arranged on a surface of the substrate; a step (B) for forming, on the entire electrode array, a sealing laminate having three or more sealing layers in which a first sealing layer, a second sealing layer, and a third sealing layer are laminated in this order, the sealing laminate being formed such that the etching rate of the second sealing layer is higher than the etching rate of the third sealing layer; a step (C) in which a mask is formed on the sealing laminate in which one type of electrode among the plurality of electrodes is not disposed; a step (D) in which an umbrella shape is formed at the end of the sealing laminate with respect to the opening so that one type of electrode is exposed by etching the substrate using a mask; and a step (E) in which, after the step (D), a light-emitting layer and an electrode layer are formed over the entire electrode array.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method and a substrate processing system. Background Art

[0002] Patent document 1 discloses a sub-pixel circuit and a method for forming the sub-pixel circuit that can be used for a display such as an organic light emitting diode display. The sub-pixel is formed by applying an organic EL (Electro Luminescence) layer using an overhang structure formed on an adjacent PDL (Pixel Defining Layer) structure.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2022 / 0077257 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a substrate processing method and a substrate processing system for improving productivity.

[0008] Solutions for solving problems

[0009] According to one embodiment of the present disclosure, there is provided a substrate processing method, comprising the following steps: step (A), preparing a substrate having an electrode array in which a plurality of electrodes are arranged on a surface of the substrate; step (B), forming a sealing stack on the entire electrode array, the sealing stack having three or more sealing layers stacked in the order of a first sealing layer, a second sealing layer, and a third sealing layer, the sealing stack being formed in such a manner that an etching rate of the second sealing layer is higher than an etching rate of the third sealing layer; step (C), forming a mask on the sealing stack where one type of electrode among the plurality of electrodes is not arranged; step (D), etching the substrate using the mask to form an umbrella shape at the end of the sealing stack with respect to the opening in such a manner that the one type of electrode is exposed; and step (E), after step (D), forming a light-emitting layer and an electrode layer on the entire electrode array.

[0010] Effects of the Invention

[0011] According to one aspect, productivity can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a flowchart showing an example of the substrate processing method according to the first embodiment.

[0013] Figure 2 1 is a flowchart showing an example of a process for forming a sealed laminate.

[0014] Figure 3 This is an example of a schematic cross-sectional view of a substrate in each step.

[0015] Figure 4 This is an example of a schematic cross-sectional view of a substrate in each step.

[0016] Figure 5 This is an example of a schematic cross-sectional view of a substrate in each step.

[0017] Figure 6 This is an example of a schematic cross-sectional view of a substrate in each step.

[0018] Figure 7 This is an example of a schematic cross-sectional view of a substrate in each step.

[0019] Figure 8 This is an example of a schematic cross-sectional view of a substrate in each step.

[0020] Fig. 9 This is an example of a schematic cross-sectional view of a substrate in each step.

[0021] Fig.10 This is an example of a schematic cross-sectional view of a substrate in each step.

[0022] Fig.11 This is an example of a schematic cross-sectional view of a substrate in each step.

[0023] Fig.12 This is an example of a schematic cross-sectional view of a substrate in each step.

[0024] Fig.13 This is an example of a schematic cross-sectional view of a substrate in each step.

[0025] Fig.14 This is an example of a schematic cross-sectional view of a substrate in each step.

[0026] Fig.15 This is an example of a schematic cross-sectional view of a substrate in each step.

[0027] Fig.16 This is an example of a schematic cross-sectional view of a substrate in each step.

[0028] Fig.17 This is an example of a schematic cross-sectional view of a substrate in each step.

[0029] Fig.18 This is a flowchart showing an example of a substrate processing method according to the second embodiment.

[0030] Fig.19 This is an example of a schematic cross-sectional view of a substrate in each step.

[0031] Fig. 20 This is an example of a schematic cross-sectional view of a substrate in each step.

[0032] Fig.21 This is an example of a schematic cross-sectional view of a substrate in each step.

[0033] Fig. 22 This is an example of a schematic cross-sectional view of a substrate in each step.

[0034] Fig.23 This is an example of a schematic cross-sectional view of a substrate in each step.

[0035] Fig.24 This is an example of a schematic cross-sectional view of a substrate in each step.

[0036] Fig.25 This is an example of a schematic cross-sectional view of a substrate in each step.

[0037] Fig.26 This is an example of a schematic cross-sectional view of a substrate in each step.

[0038] Fig. 27 This is an example of a schematic cross-sectional view of a substrate in each step.

[0039] Fig.28 This is an example of a schematic cross-sectional view of a substrate in each step.

[0040] Fig.29 This is an example of a schematic cross-sectional view of a substrate in each step.

[0041] Fig.30 This is an example of a schematic cross-sectional view of a substrate in each step.

[0042] Fig.31 This is an example of a schematic cross-sectional view of a substrate in each step.

[0043] Fig.32 This is an example of a plan view showing the structure of the first substrate processing system.

[0044] Fig.33 FIG. 1 is an example of a plan view showing the structure of the second substrate processing system.

[0045] Fig.34 This is an example of a schematic cross-sectional view showing the structure of a process module. DETAILED DESCRIPTION

[0046] In the prior art, in the process of forming the overhang structure, the increase in the number of steps due to the increase in the number of photolithography processes sometimes becomes a problem. In addition, the anode electrode may be degraded due to the influence of moisture during the wet etching process and oxygen in the atmosphere. In addition, the handle part of the overhang structure requires the use of a metal layer, and it is difficult to control the shape. In addition, in order to make the handle part conductive with the cathode electrode, a highly directional evaporation technology is required. Therefore, in each embodiment shown below, a substrate processing method that can solve the above-mentioned problems and improve productivity is described.

[0047] Hereinafter, the mode for implementing the present disclosure will be described with reference to the drawings. In each of the drawings, the same components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0048] <First Embodiment>

[0049] use Figure 1 to Figure 17 An example of a substrate processing method according to the first embodiment for forming a plurality of types of organic EL elements on a substrate will be described. Figure 1 This is a flowchart showing an example of the substrate processing method according to the first embodiment. Figure 2 1 is a flowchart showing an example of a process for forming a sealed laminate. Figure 3 to Figure 17 This is an example of a schematic cross-sectional view of a substrate in each step.

[0050] Here, a substrate processing method for forming three types of organic EL elements on a substrate is described as an example. Specifically, an organic EL element emitting red light (R), an organic EL element emitting green light (G), and an organic EL element emitting blue light (B) are formed on a substrate as an example. In addition, the organic EL element is composed of a stacked anode electrode, a light-emitting layer, and a cathode electrode.

[0051] Furthermore, the types of organic EL elements formed on the substrate are not limited to three, and may be one type or two or more types.

[0052] (Step S1: Preparing a substrate)

[0053] exist Figure 1 In the substrate processing method, in step S1, a substrate is prepared. Figure 3 3 is an example of a schematic cross-sectional view of a substrate prepared in step S1. The substrate has a substrate 300 and an electrode array 310. The substrate 300 is, for example, made of a glass plate. In addition, the material of the substrate 300 is not limited thereto, and may be a ceramic plate, a plastic plate, a metal plate, a silicon plate, etc. In addition, the substrate 300 may be made of an insulating material or a light-transmitting material. In addition, the shape of the substrate (substrate 300) may be rectangular, circular, etc., and there is no limitation on the shape.

[0054] The electrode array 310 has a plurality of anode electrodes 311, 312, 313. The plurality of anode electrodes 311, 312, 313 are arranged at different positions on the surface of the substrate (substrate 300). Here, the electrode array 310 includes a first anode electrode 311, a second anode electrode 312, and a third anode electrode 313. The plurality of anode electrodes 311, 312, 313 are made of, for example, indium tin oxide (ITO: Indium Tin Oxide). In addition, the plurality of anode electrodes 311, 312, 313 are not limited thereto, and a layer made of silver or aluminum may be added between the substrate 300 and the anode electrodes 311, 312, 313 as a base. In addition, the plurality of anode electrodes 311, 312, 313 may also be made of a material having a conductive material. In addition, the plurality of anode electrodes 311, 312, 313 may also be made of a material having light transmittance.

[0055] In addition, although the description is made assuming that a substrate having the electrode array 310 is prepared in step S1, the present invention is not limited thereto. Step S1 may include a step of preparing a substrate (base material 300) not having the electrode array 310 and forming the electrode array 310 on the substrate.

[0056] (Step S2: Forming a Sealed Laminated Body)

[0057] In step S2, a sealing laminate 320 is formed on the substrate. Figure 2 An example of the process of forming the sealing laminated body 320 in step S2 will be described. Figure 2 The details of the formation process of the sealing stack 320 are shown. In step S2a, the first sealing layer 321 is formed, in step S2b, the second sealing layer 322 is formed, and in step S2c, the third sealing layer 323 is formed. Thus, the sealing stack 320 is formed in which the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 are stacked in order from the bottom. The sealing stack 320 is formed on the entire electrode array 310. In addition, the sealing stack 320 is not limited to three layers, and it can be three or more layers.

[0058] The first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 are any films of SiN (silicon nitride film), SiON (silicon oxynitride film), SiO (silicon oxide film), and AlO (aluminum oxide film), respectively. The sealing stack 320 is composed of any one or a combination of multiple SiN, SiON, SiO, or AlO. That is, the sealing stack 320 can be composed of the same film formed by one selected from SiN, SiON, SiO, and AlO, or a heterogeneous film formed by a combination of two or three selected from SiN, SiON, SiO, and AlO. In addition, the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 include an inorganic insulating film.

[0059] Hereinafter, an example in which the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 are all formed of SiN as a single film type is given as an example of the sealing stack 320. The formation process of the sealing stack 320 is performed in a vacuum atmosphere.

[0060] Figure 4 3 is an example of a schematic cross-sectional view of a substrate after the process of step S2. A sealing laminate 320 is formed on the entire electrode array 310, in which a first sealing layer 321, a second sealing layer 322, and a third sealing layer 323 are sequentially stacked from the bottom. The etching rate of the second sealing layer 322 is formed to be higher than the etching rate of the third sealing layer 323 under the same processing conditions. The process conditions for forming the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 and the details of the hardness of the film will be described later.

[0061] (Step S3: Forming a First Mask)

[0062] In step S3, a first mask 331 is formed on the substrate. Here, the first mask 331 is formed on the substrate by photolithography. The first mask 331 is a mask of a photoresist. The photolithography includes a resist forming process, an exposure process, and a development process. In the resist forming process, a photoresist is formed on the substrate. In the exposure process, the substrate on which the photoresist is formed is irradiated with light such as ultraviolet light (UV: Ultraviolet) and deep ultraviolet light (DUV: Deep Ultraviolet) through a photomask. As a result, an exposed portion irradiated with light and an unexposed portion not irradiated with light are formed in the photoresist. In the development process, the first mask 331 is formed using the photoresist. In addition, in the case of a positive photoresist, the first mask 331 is formed by removing the photoresist of the exposed portion and leaving the photoresist of the unexposed portion. On the other hand, in the case of a negative photoresist, the photoresist in the unexposed portion is removed and the photoresist in the exposed portion is left, thereby forming the first mask 331. The first mask 331 is formed in an air atmosphere.

[0063] Figure 5 31 is an example of a schematic cross-sectional view of the substrate after the process of step S3. The first mask 331 is selectively formed on the sealing laminate 320 where the first anode electrode 311 is not configured. That is, the first mask 331 is formed on the second anode electrode 312 and the third anode electrode 313, and is not formed on the first anode electrode 311.

[0064] (Step S4: Etching)

[0065] In step S4, plasma is generated from the etching gas to perform plasma etching on the substrate. Here, the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 on the first anode electrode 311 are etched using the first mask 331. In addition, the etching process is a dry etching process performed under a vacuum atmosphere. The etching gas is a fluorine-containing gas. For example, the fluorine-containing gas can be CF4 gas, CHF3 gas, SF6 gas, etc. The etching gas can be a gas containing fluorine and oxygen such as CF4 gas and O2 gas.

[0066] When the first sealing layer 321 to the third sealing layer 323 are etched, the pressure in the processing container 290 described later is controlled to be 10 mTorr (1.33 Pa) or more and 50 mTorr (6.65 Pa) or less by supplying gas and exhausting by the exhaust device 250. More preferably, the second sealing layer 322 is isotropically etched by making the pressure during the etching process of the second sealing layer 322 higher than the pressure during the etching process of the third sealing layer 323. As a result, the second sealing layer 322 is etched to be cut deeper into the interior than the third sealing layer 323.

[0067] Figure 6 It is an example of a schematic cross-sectional view of a substrate after the process of step S4. The etching rate of the second sealing layer 322 is higher than the etching rate of the third sealing layer 323. That is, the second sealing layer 322 is easier to be removed than the third sealing layer 323. In addition, the second sealing layer 322 is isotropically etched. Therefore, the second sealing layer 322 is etched to cut inward more than the third sealing layer 323. Thus, an umbrella shape can be formed at the end of the sealing stack 320 for the opening 324. The umbrella shape at the end of the sealing stack 320 is a shape composed of a handle portion and an umbrella portion, the handle portion is composed of a side of the second sealing layer 322 facing the opening 324 that cuts inward more than the third sealing layer 323 and the side is inclined from the center of the first anode electrode 311 to the outside as it goes from the lower surface of the second sealing layer 322 to the upper surface, and the umbrella portion is composed of a portion of the third sealing layer 323 protruding toward the center side of the first anode electrode 311 relative to the second sealing layer 322. That is, the second sealing layer 322 has a tapered shape in which the opening 324 expands from the lower surface of the second sealing layer 322 to the upper surface of the second sealing layer 322, and the side surfaces of the first sealing layer 321 and the third sealing layer 323 have a vertical shape. In addition, the side surface of the third sealing layer 323 may also protrude toward the opening 324 side relative to the side surface of the first sealing layer 321. By anisotropically etching the first sealing layer 321 and the third sealing layer 323, the etching time until the first anode electrode 311 is exposed from the opening 324 can be shortened. Thus, productivity can be improved. In addition, the first mask 331 is completely ashed and removed during the etching process.

[0068] (Step S5: Forming a First Light Emitting Layer)

[0069] In step S5, a continuous film of the first light-emitting layer 341 is formed so as to cover the entire electrode array 310. The first light-emitting layer 341 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, red (R)) by applying a voltage between electrodes (the first anode electrode 311 and the first cathode electrode 342 described later). The first light-emitting layer 341 is formed by, for example, vacuum evaporation.

[0070] The first light-emitting layer 341 is isolated from the surroundings by the umbrella shape formed in the opening 324. A part of the first light-emitting layer 341 is formed on the first anode electrode 311, and the rest of the first light-emitting layer 341 is formed on the sealing laminate 320 (third sealing layer 323) (see Figure 7 ).

[0071] (Step S6: Forming a First Cathode Electrode)

[0072] In step S5, a first cathode electrode 342 is formed on the substrate. Here, a continuous film of the first cathode electrode 342 is formed on the first light-emitting layer 341. The first cathode electrode 342 is composed of, for example, ITO, IZO, etc., and a layer composed of MgAg can be added between the first light-emitting layer 341 and the first cathode electrode 342 as a substrate. In addition, in the case of a cavity structure, MgAg can also be used as a cathode electrode material. In addition, the formation process of the first cathode electrode 342 is performed by any film forming process such as vacuum evaporation, PVD (Physical Vapor Deposition: physical vapor deposition) film forming, CVD (Chemical Vapor Deposition: chemical vapor deposition) film forming, ALD (Atomic Layer Deposition: atomic layer deposition) film forming, or a combination thereof.

[0073] The first cathode electrode 342 is isolated from the surroundings by the umbrella shape formed in the opening 324, a part of the first cathode electrode 342 is formed on the first light-emitting layer 341 on the first anode electrode 311, and the rest of the first cathode electrode 342 is formed on the first light-emitting layer 341 on the sealing laminate 320 (third sealing layer 323) (see Figure 7 ).

[0074] (Step S7: Forming the 4a Sealing Layer)

[0075] In step S7, the 4a sealing layer 351 is formed on the substrate. The 4a sealing layer 351 is an example of a fourth sealing layer formed on the electrode layer. Here, a continuous film of the 4a sealing layer 351 is formed on the first cathode electrode 342. The 4a sealing layer 351 includes an inorganic insulating film. The 4a sealing layer 351 is composed of, for example, any one of SiO, SiN, SiON, and AlO, or a combination thereof. In addition, the formation process of the 4a sealing layer 351 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process, or a combination thereof. In addition, the formation process of the first light-emitting layer 341, the first cathode electrode 342, and the 4a sealing layer 351 is performed in a vacuum atmosphere.

[0076] Figure 71 is an example of a schematic cross-sectional view of a substrate after the process of step S7. A first light-emitting layer 341 is formed on the first anode electrode 311. In addition, a first cathode electrode 342 is formed on the first light-emitting layer 341. In addition, a 4a-th sealing layer 351 is formed on the first cathode electrode 342. The opening 324 is filled with the 4a-th sealing layer 351. Thus, it is possible to prevent moisture and oxygen from being mixed into the film of the first light-emitting layer 341 or the first cathode electrode 342, thereby extending the life of the first light-emitting layer 341.

[0077] (Step S8: Etching)

[0078] In step S8, the first light-emitting layer 341, the first cathode electrode 342, and the 4a sealing layer 351 on the sealing stack 320 are removed by etching. On the other hand, on the first anode electrode 311, the first light-emitting layer 341 and the first cathode electrode 342 covered by the 4a sealing layer 351 are left. In this way, through the processing of steps S3 to S8, a first stack (organic EL element) in which the first anode electrode 311, the first light-emitting layer 341, the first cathode electrode 342, and the 4a sealing layer 351 are stacked is formed on the substrate.

[0079] Figure 8 3 is an example of a schematic cross-sectional view of the substrate after the process of step S8. The plurality of anode electrodes 311, 312, 313 are sealed by the sealing laminate 320, and the first light-emitting layer 341 and the first cathode electrode 342 are sealed by the 4a-sealing layer 351. Thus, it is possible to prevent the plurality of anode electrodes 311, 312, 313, the first light-emitting layer 341, and the first cathode electrode 342 from contacting with oxygen, moisture, etc. when the substrate is exposed to the atmosphere.

[0080] (Step S9: Forming a Second Mask)

[0081] In step S9, a second mask 332 is formed on the substrate. Here, the second mask 332 is formed on the substrate by photolithography. The second mask 332 is a photoresist mask. The photolithography is the same as the photolithography of step S3. In addition, the formation of the second mask 332 is performed in an air atmosphere.

[0082] Fig. 9 3 is an example of a schematic cross-sectional view of the substrate after the process of step S9. The second mask 332 is selectively formed on the sealing laminate 320 where the second anode electrode 312 is not configured. That is, the second mask 332 is formed on the first anode electrode 311 and the third anode electrode 313, and is not formed on the second anode electrode 312.

[0083] (Step S10: Etching)

[0084] In step S10, plasma is generated from the etching gas to perform plasma etching on the substrate. Here, the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 on the second anode electrode 312 are etched using the second mask 332. In addition, the etching process is a dry etching process and is performed in a vacuum atmosphere. As for the etching gas, the same etching gas as the etching gas used in step S4 can be used.

[0085] Fig.10 It is an example of a cross-sectional schematic diagram of a substrate after the process of step S10. The etching rate of the second sealing layer 322 is higher than the etching rate of the third sealing layer 323. That is, the second sealing layer 322 is easier to be removed than the third sealing layer 323. Therefore, the second sealing layer 322 can be etched to cut deeper into the inside than the third sealing layer 323. Thus, an umbrella shape can be formed at the end of the sealing stack 320 for the opening 325. In addition, by anisotropically etching the first sealing layer 321 and the third sealing layer 323, the etching time until the second anode electrode 312 is exposed from the opening 325 can be shortened. Thus, productivity can be improved. In addition, the second mask 332 is completely ashed and removed during the etching process.

[0086] (Step S11: Forming a Second Light Emitting Layer)

[0087] In step S11, a continuous film of the second light-emitting layer 343 is formed so as to cover the entire electrode array 310. The second light-emitting layer 343 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, green (G)) by applying a voltage between electrodes (the second anode electrode 312 and the second cathode electrode 344 described later). The second light-emitting layer 343 is formed by, for example, vacuum deposition.

[0088] The second light-emitting layer 343 is isolated by the umbrella shape formed in the opening 325, a part of the second light-emitting layer 343 is formed on the second anode electrode 312, and the rest of the second light-emitting layer 343 is formed on the sealing laminate 320 (third sealing layer 323) (see Fig.11 ).

[0089] (Step S12: Forming a Second Cathode Electrode)

[0090] In step S12, a second cathode electrode 344 is formed on the substrate. Here, a continuous film of the second cathode electrode 344 is formed on the second light-emitting layer 343. The second cathode electrode 344 is composed of, for example, ITO, IZO, etc., and a layer composed of MgAg may be added between the second light-emitting layer 343 and the second cathode electrode 344 as a substrate. In addition, in the case of having a cavity structure, MgAg may also be used as a cathode electrode material. In addition, the second cathode electrode 344 is formed by any film forming process such as vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, or a combination thereof.

[0091] The second cathode electrode 344 is isolated by the umbrella shape formed in the opening 325, and a part of the second cathode electrode 344 is formed on the second light-emitting layer 343 on the second anode electrode 312, and the rest of the second cathode electrode 344 is formed on the second light-emitting layer 343 on the sealing laminate 320 (third sealing layer 323) (see Fig.11 ).

[0092] (Step S13: Forming the 4b sealing layer)

[0093] In step S13, a 4b sealing layer 352 is formed on the substrate. The 4b sealing layer 352 is an example of a fourth sealing layer formed on the electrode layer. Here, a continuous film of the 4b sealing layer 352 is formed on the second cathode electrode 344. The 4b sealing layer 352 includes an inorganic insulating film. The 4b sealing layer 352 is composed of, for example, any one of SiO, SiN, SiON, and AlO, or a combination thereof. In addition, the formation process of the 4b sealing layer 352 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof. In addition, the formation process of the second light-emitting layer 343, the second cathode electrode 344, and the 4b sealing layer 352 is performed in a vacuum atmosphere.

[0094] Fig.11 1 is an example of a schematic cross-sectional view of a substrate after the process of step S13. A second light-emitting layer 343 is formed on the second anode electrode 312. In addition, a second cathode electrode 344 is formed on the second light-emitting layer 343. In addition, a 4b sealing layer 352 is formed on the second cathode electrode 344. The opening 325 is filled with the 4b sealing layer 352. Thus, it is possible to prevent moisture and oxygen from being mixed into the film of the second light-emitting layer 343 or the second cathode electrode 344, thereby extending the life of the second light-emitting layer 343.

[0095] (Step S14: Etching)

[0096] In step S14, the second light-emitting layer 343, the second cathode electrode 344, and the 4b sealing layer 352 on the sealing stack 320 are removed by etching. On the other hand, the second light-emitting layer 343 and the second cathode electrode 344 covered by the 4b sealing layer 352 are left on the second anode electrode 312. In this way, through the processing of steps S9 to S14, a second stack (organic EL element) in which the second anode electrode 312, the second light-emitting layer 343, the second cathode electrode 344, and the 4b sealing layer 352 are stacked is formed on the substrate.

[0097] Fig.12 3 is an example of a schematic cross-sectional view of the substrate after the process of step S14. The plurality of anode electrodes 311, 312, 313 are sealed by the sealing laminate 320, and the second light-emitting layer 343 and the second cathode electrode 344 are sealed by the 4b sealing layer 352. Thus, when the substrate is exposed to the atmosphere, the plurality of anode electrodes 311, 312, 313, the first light-emitting layer 341, the first cathode electrode 342, the second light-emitting layer 343 and the second cathode electrode 344 are prevented from contacting with oxygen, moisture and the like.

[0098] (Step S15: Forming a Third Mask)

[0099] In step S15, a third mask 333 is formed on the substrate. Here, the third mask 333 is formed on the substrate by photolithography. The third mask 333 is a photoresist mask. In addition, the formation process of the third mask 333 is performed in an air atmosphere.

[0100] Fig.13 333 is selectively formed on the sealing laminate 320 where the third anode electrode 313 is not configured. That is, the third mask 333 is formed on the first anode electrode 311 and the second anode electrode 312, and is not formed on the third anode electrode 313.

[0101] (Step S16: Etching)

[0102] In step S16, plasma is generated from the etching gas to perform plasma etching on the substrate. Here, the first sealing layer 321, the second sealing layer 322, and the third sealing layer 323 on the third anode electrode 313 are etched using the third mask 333. In addition, the etching process is a dry etching process and is performed in a vacuum atmosphere. As for the etching gas, the same etching gas as the etching gas used in step S4 can be used.

[0103] Fig.14It is an example of a cross-sectional schematic diagram of a substrate after the process of step S16. The etching rate of the second sealing layer 322 is higher than the etching rate of the third sealing layer 323. That is, the second sealing layer 322 is easier to be removed than the third sealing layer 323. Therefore, the second sealing layer 322 can be etched to cut deeper into the inside than the third sealing layer 323. Thus, an umbrella shape can be formed at the end of the sealing stack 320 for the opening 326. In addition, by anisotropically etching the first sealing layer 321 and the third sealing layer 323, the etching time until the third anode electrode 313 is exposed from the opening 326 can be shortened. Thus, productivity can be improved. In addition, the third mask 333 is completely ashed and removed during the etching process.

[0104] (Step S17: Forming a Third Light Emitting Layer)

[0105] In step S17, a continuous film of the third light-emitting layer 345 is formed so as to cover the entire electrode array 310. The third light-emitting layer 345 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, blue (B)) by applying a voltage between electrodes (the third anode electrode 313 and the third cathode electrode 346 described later). The formation process of the third light-emitting layer 345 is performed, for example, by vacuum evaporation.

[0106] The third light-emitting layer 345 is isolated from the surroundings by the umbrella shape formed in the opening 326. A part of the third light-emitting layer 345 is formed on the third anode electrode 313, and the rest of the third light-emitting layer 345 is formed on the sealing laminate 320 (third sealing layer 323) (see Fig.15 ).

[0107] (Step S18: Forming a Third Cathode Electrode)

[0108] In step S18, the third cathode electrode 346 is formed on the substrate. Here, a continuous film of the third cathode electrode 346 is formed on the third light-emitting layer 345. The third cathode electrode 346 is composed of, for example, ITO, IZO, etc., and a layer composed of MgAg may be added between the third light-emitting layer 345 and the third cathode electrode 346 as a substrate. In addition, in the case of having a cavity structure, MgAg may also be used as a cathode electrode material. In addition, the formation process of the third cathode electrode 346 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0109] The third cathode electrode 346 is isolated from the surroundings by the umbrella shape formed in the opening 326. A portion of the third cathode electrode 346 is formed on the third light-emitting layer 345 on the third anode electrode 313, and the remaining portion of the third cathode electrode 346 is formed on the third light-emitting layer 345 on the sealing laminate 320 (third sealing layer 323) (see Fig.15 ).

[0110] (Step S19: Forming the 4c ​​Sealing Layer)

[0111] In step S19, a 4c sealing layer 353 is formed on the substrate. The 4c ​​sealing layer 353 is an example of a fourth sealing layer formed on the electrode layer. Here, a continuous film of the 4c ​​sealing layer 353 is formed on the third cathode electrode 346. The 4c ​​sealing layer 353 includes an inorganic insulating film. The 4c ​​sealing layer 353 is composed of, for example, any one of SiO, SiN, SiON, and AlO, or a combination thereof. In addition, the formation process of the 4c ​​sealing layer 353 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof. In addition, the formation process of the third light-emitting layer 345, the third cathode electrode 346, and the 4c ​​sealing layer 353 is performed in a vacuum atmosphere.

[0112] Fig.15 1 is an example of a schematic cross-sectional view of a substrate after the process of step S19. A third light-emitting layer 345 is formed on the third anode electrode 313. In addition, a third cathode electrode 346 is formed on the third light-emitting layer 345. In addition, a 4c sealing layer 353 is formed on the third cathode electrode 346. The opening 326 is filled with the 4c ​​sealing layer 353. Thus, it is possible to prevent moisture and oxygen from being mixed into the film of the third light-emitting layer 345 or the third cathode electrode 346, thereby extending the life of the third light-emitting layer 345.

[0113] (Step S20: Etching)

[0114] In step S20, the third light-emitting layer 345, the third cathode electrode 346, and the 4c ​​sealing layer 353 on the sealing stack 320 are removed by etching. In this way, through the processing of steps S15 to S20, a third stack (organic EL element) having the third anode electrode 313, the third light-emitting layer 345, the third cathode electrode 346, and the 4c ​​sealing layer 353 is formed on the substrate. In addition, the 4a sealing layer 351, the 4b sealing layer 352, the 4c ​​sealing layer 353, the second sealing layer 322, and the third sealing layer 323 of the sealing stack 320 are removed by etching until the first cathode electrode 342, the second cathode electrode 344, and the third cathode electrode 346 are exposed.

[0115] Fig.163 is an example of a schematic cross-sectional view of a substrate after the process of step S20. A first light-emitting layer 341 and a first cathode electrode 342 are formed on the first anode electrode 311. A second light-emitting layer 343 and a second cathode electrode 344 are formed on the second anode electrode 312. A third light-emitting layer 345 and a third cathode electrode 346 are formed on the third anode electrode 313. In this way, a stacked body array in which a stacked body formed of an electrode layer and a light-emitting layer emitting light of different colors is exposed is produced.

[0116] In step S21, a wiring layer 361 is formed on the substrate. Here, a continuous film of the wiring layer 361 is formed on the first sealing layer 321, the first cathode electrode 342, the second cathode electrode 344, and the third cathode electrode 346. Thus, the wiring layer 361 is electrically connected to the first cathode electrode 342, the second cathode electrode 344, and the third cathode electrode 346. The wiring layer 361 is composed of, for example, ITO, IZO, etc. In addition, the formation process of the wiring layer 361 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0117] In step S22, a fifth sealing layer 362 is formed on the substrate. Here, a continuous film of the fifth sealing layer 362 is formed on the substrate on which the wiring layer 361 is formed. The fifth sealing layer 362 includes an inorganic insulating film. The fifth sealing layer 362 is composed of, for example, any one of SiO, SiN, SiON, and AlO, or a combination thereof. In addition, the formation process of the fifth sealing layer 362 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process, or a combination thereof. In addition, the formation process of the fifth sealing layer 362 is performed in a vacuum atmosphere.

[0118] Fig.17 This is an example of a schematic cross-sectional view of the substrate after the process of step S22. The fifth sealing layer 362 seals the first to third anode electrodes 311, 312, 313, the first to third light-emitting layers 341, 343, 345, the first to third cathode electrodes 342, 344, 346, and the wiring layer 361. Thus, when the substrate is exposed to the atmosphere, the first to third anode electrodes 311, 312, 313, the first to third light-emitting layers 341, 343, 345, the first to third cathode electrodes 342, 344, 346, and the wiring layer 361 are prevented from contacting with oxygen, moisture, and the like.

[0119] As described above, according to the substrate processing method according to the first embodiment, three types of organic EL elements that respectively emit red (R), green (G), and blue (B) light can be formed on the substrate.

[0120] In addition, according to the substrate processing method involved in the first embodiment, the electrodes (first to third anode electrodes 311, 312, 313, first to third cathode electrodes 342, 344, 346) and the first to third light-emitting layers 341, 343, 345 are prevented from being deteriorated by moisture, oxygen, etc. during the photolithography process. This can suppress the degradation of the organic EL element and extend its life.

[0121] In the process of forming an organic EL element by vapor deposition using a fine metal mask (FMM), the space between pixels (organic EL elements) becomes larger. In contrast, according to the substrate processing method involved in the first embodiment, the organic EL element is formed without using FMM, so the space between adjacent pixels becomes narrower compared to the case where the organic EL element is formed using FMM, and the light-emitting area can be expanded. In addition, according to the substrate processing method involved in the first embodiment, compared with the case where the organic EL element is formed using FMM, the yield is high and the productivity is improved.

[0122] <Second Embodiment>

[0123] use Figures 18 to 31 An example of a substrate processing method according to the second embodiment for forming a plurality of types of organic EL elements on a substrate will be described. Fig.18 This is a flowchart showing an example of a substrate processing method according to the second embodiment. Figures 19 to 31 This is an example of a schematic cross-sectional view of a substrate in each step.

[0124] (Step S31: Prepare substrate)

[0125] exist Fig.18 In the substrate processing method, in step S31, a substrate is prepared. Fig.19 FIG. 4 is an example of a schematic cross-sectional view of a substrate prepared in step S31. The substrate includes a substrate 400 and an electrode array 410. The material and shape of the substrate 400 are similar to Figure 3 The material and shape of the substrate 300 are the same.

[0126] The electrode array 410 has a plurality of anode electrodes 411, 412, 413. Here, the electrode array 410 includes a first anode electrode 411, a second anode electrode 412, and a third anode electrode 413. The plurality of anode electrodes 411, 412, 413 are made of, for example, indium tin oxide (ITO: Indium Tin Oxide). In addition, the plurality of anode electrodes 411, 412, 413 are not limited thereto, and a layer made of silver or aluminum may be added between the substrate 400 and the anode electrodes 411, 412, 413 as a base. In addition, the plurality of anode electrodes 411, 412, 413 may also be made of a conductive material. In addition, the plurality of anode electrodes 411, 412, 413 may also be made of a light-transmitting material. In addition, the plurality of anode electrodes 411, 412, 413 are arranged at different positions on the surface of the substrate (substrate 400).

[0127] In addition, although the description assumes that a substrate having the electrode array 410 is prepared in step S31, the present invention is not limited thereto. Step S31 may include a step of preparing a substrate (base material 400) not having the electrode array 410 and forming the electrode array 410 on the substrate.

[0128] (Step S32: Forming a Sealed Laminated Body)

[0129] In step S32, a sealing laminate 420 is formed on the substrate. The process of forming the sealing laminate 420 in step S32 is similar to the process of forming the sealing laminate 320 according to the first embodiment ( Figure 2 ) are the same, so the description is omitted here.

[0130] In the following, as an example of the sealing stack 420, an example in which the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 are all formed of SiN and the film types are unified is given. In addition, under the same processing conditions, the etching rate of the second sealing layer 422 is higher than the etching rate of the third sealing layer 423. In addition, the formation process of the sealing stack 420 is performed in a vacuum atmosphere.

[0131] Fig. 20 This is an example of a schematic cross-sectional view of a substrate after the process of step S32. A sealing laminate 420 in which a first sealing layer 421, a second sealing layer 422, and a third sealing layer 423 are sequentially laminated is formed on the entire electrode array 410. The process conditions for forming each layer of the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 and the hardness of the film will be described later.

[0132] (Step S33: Forming a First Mask)

[0133] In step S33, a first mask 431 is formed on the substrate. Here, the first mask 431 is formed on the substrate by photolithography. The first mask 431 is a mask of photoresist. Figure 1 The photolithography process of step S3 and the like is the same. In addition, the formation process of the first mask 431 is performed in an air atmosphere.

[0134] Fig.21 4 is an example of a schematic cross-sectional view of the substrate after the process of step S33. The first mask 431 is selectively formed on the sealing laminate 420 where the first anode electrode 411 is not configured. That is, the first mask 431 is formed on the second anode electrode 412 and the third anode electrode 413, and is not formed on the first anode electrode 411.

[0135] (Step S34: Etching)

[0136] In step S34, plasma is generated from the etching gas to perform plasma etching on the substrate. Here, the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 on the first anode electrode 411 are etched using the first mask 431. In addition, the etching process is a dry etching process and is performed in a vacuum atmosphere. As for the etching gas, the same as in Figure 1 The etching gas is the same as the etching gas used in step S4 etc.

[0137] Fig. 22 It is an example of a cross-sectional schematic diagram of a substrate after the process of step S34. The etching rate of the second sealing layer 422 is higher than the etching rate of the third sealing layer 423. That is, the second sealing layer 422 is easier to be removed than the third sealing layer 423. Therefore, the second sealing layer 422 can be etched to cut deeper into the inside than the third sealing layer 423. Thus, an umbrella shape can be formed at the end of the sealing stack 420 for the opening 424. In addition, by anisotropically etching the first sealing layer 421 and the third sealing layer 423, the etching time until the first anode electrode 411 is exposed from the opening 424 can be shortened. Thus, productivity can be improved. In addition, the first mask 431 is completely ashed and removed during the etching process.

[0138] (Step S35: Forming a First Light Emitting Layer)

[0139] In step S35, a continuous film of the first light-emitting layer 441 is formed so as to cover the entire electrode array 410. The first light-emitting layer 441 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, red (R)) by applying a voltage between electrodes (the first anode electrode 411 and the first cathode electrode 442 described later). The first light-emitting layer 441 is formed by, for example, vacuum deposition or the like.

[0140] The first light-emitting layer 441 is isolated from the surroundings by the umbrella shape formed in the opening 424. A portion of the first light-emitting layer 441 is formed on the first anode electrode 411, and the remaining portion of the first light-emitting layer 441 is formed on the sealing laminate 420 (third sealing layer 423) (see Fig.23 ).

[0141] (Step S36: Forming a First Cathode Electrode)

[0142] In step S36, a first cathode electrode 442 is formed on the substrate. Here, a continuous film of the first cathode electrode 442 is formed on the first light-emitting layer 441. The first cathode electrode 442 is composed of, for example, ITO, IZO, etc., and a layer composed of MgAg may be added between the first light-emitting layer 441 and the first cathode electrode 442 as a substrate. In addition, in the case of having a cavity structure, MgAg may also be used as a cathode electrode material. In addition, the formation process of the first cathode electrode 442 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0143] The first cathode electrode 442 is isolated from the surroundings by the umbrella shape formed in the opening 424. A portion of the first cathode electrode 442 is formed on the first light-emitting layer 441 on the first anode electrode 411, and the remaining portion of the first cathode electrode 442 is formed on the first light-emitting layer 441 on the sealing laminate 420 (third sealing layer 423) (see Fig.23 ).

[0144] (Step S37: Forming the 4a Sealing Layer)

[0145] In step S37, the 4a sealing layer 451 is formed on the substrate. The 4a sealing layer 451 is an example of a fourth sealing layer formed on the electrode layer. Here, a continuous film of the 4a sealing layer 451 is formed on the first cathode electrode 442. The 4a sealing layer 451 includes an inorganic insulating film. The 4a sealing layer 451 is composed of, for example, any one of SiO, SiN, SiON, and AlO, or a combination thereof. In addition, the formation process of the 4a sealing layer 451 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof. In addition, the formation process of the first light-emitting layer 441, the first cathode electrode 442, and the 4a sealing layer 451 is performed in a vacuum atmosphere.

[0146] Fig.23This is an example of a schematic cross-sectional view of a substrate after the process of step S37. A first light-emitting layer 441 is formed on the first anode electrode 411. In addition, a first cathode electrode 442 is formed on the first light-emitting layer 441. In addition, a 4a sealing layer 451 is formed on the first cathode electrode 442. The opening 424 is filled with the 4a sealing layer 451. Thus, it is possible to avoid the mixing of moisture and oxygen into the film of the first light-emitting layer 441 or the first cathode electrode 442, thereby extending the life of the first light-emitting layer 441. In this way, by the processing of steps S33 to S37, a first stacked body (organic EL element) having the first anode electrode 411, the first light-emitting layer 441, the first cathode electrode 442 and the 4a sealing layer 451 is formed on the substrate.

[0147] (Step S38: Forming a Second Mask)

[0148] In step S38, a second mask 432 is formed on the substrate. Here, the second mask 432 is formed on the substrate by photolithography. The second mask 432 is a photoresist mask. Figure 1 The photolithography process of step S3 and the like is the same. In addition, the formation process of the second mask 432 is performed in an air atmosphere.

[0149] Fig.24 4 is an example of a schematic cross-sectional view of the substrate after the process of step S38. The second mask 432 is selectively formed on the sealing laminate 420 where the second anode electrode 412 is not configured. That is, the second mask 432 is formed on the first anode electrode 411 and the third anode electrode 413, and is not formed on the second anode electrode 412.

[0150] (Step S39: Etching)

[0151] In step S39, plasma is generated from the etching gas to perform plasma etching on the substrate. Here, the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 on the second anode electrode 412 are etched using the second mask 432. In addition, the etching process is a dry etching process and is performed in a vacuum atmosphere. As for the etching gas, the same as in Figure 1 The etching gas is the same as the etching gas used in step S4 etc.

[0152] Fig.25It is an example of a cross-sectional schematic diagram of a substrate after the process of step S39. The etching rate of the second sealing layer 422 is higher than the etching rate of the third sealing layer 423. That is, the second sealing layer 422 is easier to be removed than the third sealing layer 423. Therefore, the second sealing layer 422 can be etched to cut deeper into the inside than the third sealing layer 423. Thus, an umbrella shape can be formed at the end of the sealing stack 420 for the opening 425. In addition, by anisotropically etching the first sealing layer 421 and the third sealing layer 423, the etching time until the second anode electrode 412 is exposed from the opening 425 can be shortened. Thus, productivity can be improved. In addition, the second mask 432 is completely ashed and removed during the etching process.

[0153] (Step S40: Forming a Second Light Emitting Layer)

[0154] In step S40, a continuous film of the second light-emitting layer 443 is formed so as to cover the entire electrode array 410. The second light-emitting layer 443 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, green (G)) by applying a voltage between electrodes (the second anode electrode 412 and the second cathode electrode 444 described later). The second light-emitting layer 443 is formed by, for example, vacuum evaporation.

[0155] The second light-emitting layer 443 is isolated from the surroundings by the umbrella shape formed in the opening 425. A part of the second light-emitting layer 443 is formed on the second anode electrode 412, and the rest of the second light-emitting layer 443 is formed on the sealing laminate 420 (third sealing layer 423) (see Fig.26 ).

[0156] (Step S41: Forming a Second Cathode Electrode)

[0157] In step S41, a second cathode electrode 444 is formed on a substrate. Here, a continuous film of the second cathode electrode 444 is formed on the second light-emitting layer 443. The second cathode electrode 444 is composed of, for example, ITO, IZO, etc., and a layer composed of MgAg may be added between the second light-emitting layer 443 and the second cathode electrode 444 as a substrate. In addition, in the case of a cavity structure, MgAg may also be used as a cathode electrode material. In addition, the formation process of the second cathode electrode 444 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0158] The second cathode electrode 444 is isolated from the surroundings by the umbrella shape formed in the opening 425. A portion of the second cathode electrode 444 is formed on the second light-emitting layer 443 on the second anode electrode 412, and the remaining portion of the second cathode electrode 444 is formed on the second light-emitting layer 443 on the sealing laminate 420 (third sealing layer 423) (see Fig.26 ).

[0159] (Step S42: Forming the 4b-th Sealing Layer)

[0160] In step S42, a 4b sealing layer 452 is formed on the substrate. The 4b sealing layer 452 is an example of a fourth sealing layer formed on the electrode layer. Here, a continuous film of the 4b sealing layer 452 is formed on the second cathode electrode 444. The 4b sealing layer 452 includes an inorganic insulating film. The 4b sealing layer 452 is, for example, composed of any one of SiO, SiN, SiON, and AlO, or a combination thereof. In addition, the formation process of the 4b sealing layer 452 is performed, for example, by any film forming process such as vacuum evaporation, PVD film forming, CVD film forming, ALD film forming, or a combination thereof. In addition, the formation process of the second light-emitting layer 443, the second cathode electrode 444, and the 4b sealing layer 452 is performed in a vacuum atmosphere.

[0161] Fig.26 This is an example of a schematic cross-sectional view of a substrate after the process of step S42. A second light-emitting layer 443 is formed on the second anode electrode 412. In addition, a second cathode electrode 444 is formed on the second light-emitting layer 443. In addition, a 4b sealing layer 452 is formed on the second cathode electrode 444. The opening 425 is filled with the 4b sealing layer 452. Thus, it is possible to avoid moisture and oxygen from being mixed into the film of the second light-emitting layer 443 or the second cathode electrode 444, thereby extending the life of the second light-emitting layer 443. In this way, through the processing of steps S38 to S42, a second stacked body (organic EL element) stacked with the second anode electrode 412, the second light-emitting layer 443, the second cathode electrode 444 and the 4b sealing layer 452 is formed on the substrate.

[0162] (Step S43: Forming a Third Mask)

[0163] In step S43, a third mask 433 is formed on the substrate. Here, the third mask 433 is formed on the substrate by photolithography. The third mask 433 is a mask of photoresist. Figure 1 The photolithography process of step S3 and the like is the same. In addition, the formation process of the third mask 433 is performed in an air atmosphere.

[0164] Fig. 274 is an example of a schematic cross-sectional view of the substrate after the process of step S43. The third mask 433 is selectively formed on the sealing laminate 420 where the third anode electrode 413 is not configured. That is, the third mask 433 is formed on the first anode electrode 411 and the second anode electrode 412, and is not formed on the third anode electrode 413.

[0165] (Step S44: Etching)

[0166] In step S44, plasma is generated from the etching gas to perform plasma etching on the substrate. Here, the first sealing layer 421, the second sealing layer 422, and the third sealing layer 423 on the third anode electrode 413 are etched using the third mask 433. In addition, the etching process is a dry etching process and is performed in a vacuum atmosphere. As for the etching gas, the same as in Figure 1 The etching gas is the same as the etching gas used in step S4 etc.

[0167] Fig.28 It is an example of a cross-sectional schematic diagram of a substrate after the process of step S44. The etching rate of the second sealing layer 422 is higher than the etching rate of the third sealing layer 423. That is, the second sealing layer 422 is easier to be removed than the third sealing layer 423. Therefore, the second sealing layer 422 can be etched to cut deeper into the inside than the third sealing layer 423. Thus, an umbrella shape can be formed at the end of the sealing stack 420 for the opening 426. In addition, by anisotropically etching the first sealing layer 421 and the third sealing layer 423, the etching time until the third anode electrode 413 is exposed from the opening 426 can be shortened. Thus, productivity can be improved. In addition, the third mask 433 is completely ashed and removed during the etching process.

[0168] (Step S45: Forming a Third Light Emitting Layer)

[0169] In step S45, a continuous film of the third light-emitting layer 445 is formed so as to cover the entire electrode array 410. The third light-emitting layer 445 includes an organic EL, which is a light-emitting layer (organic EL layer) that emits light of a specific color (for example, blue (B)) by applying a voltage between electrodes (the third anode electrode 413 and the third cathode electrode 446 described later). The third light-emitting layer 445 is formed by, for example, vacuum evaporation.

[0170] The third light-emitting layer 445 is isolated from the surroundings by the umbrella shape formed in the opening 426. A part of the third light-emitting layer 445 is formed on the third anode electrode 413, and the rest of the third light-emitting layer 445 is formed on the sealing laminate 420 (third sealing layer 423) (see Fig.29 ).

[0171] (Step S46: Forming a Third Cathode Electrode)

[0172] In step S46, a third cathode electrode 446 is formed on the substrate. Here, a continuous film of the third cathode electrode 446 is formed on the third light-emitting layer 445. The third cathode electrode 446 is composed of, for example, ITO, IZO, etc., and a layer composed of MgAg may be added between the third light-emitting layer 445 and the third cathode electrode 446 as a substrate. In addition, in the case of having a cavity structure, MgAg may also be used as a cathode electrode material. In addition, the formation process of the third cathode electrode 446 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0173] The third cathode electrode 446 is isolated from the surroundings by the umbrella shape formed in the opening 426. A portion of the third cathode electrode 446 is formed on the third light-emitting layer 445 on the third anode electrode 413, and the remaining portion of the third cathode electrode 446 is formed on the third light-emitting layer 445 on the sealing laminate 420 (third sealing layer 423) (see Fig.29 ).

[0174] (Step S47: Forming the 4c-th Sealing Layer)

[0175] In step S47, the 4c ​​sealing layer 453 is formed on the substrate. The 4c ​​sealing layer 453 is an example of a fourth sealing layer formed on the electrode layer. Here, a continuous film of the 4c ​​sealing layer 453 is formed on the third cathode electrode 446. The 4c ​​sealing layer 453 includes an inorganic insulating film. The 4c ​​sealing layer 453 is composed of, for example, any one of SiO, SiN, SiON, and AlO, or a combination thereof. In addition, the formation process of the 4c ​​sealing layer 453 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof. In addition, the formation process of the third light-emitting layer 445, the third cathode electrode 446, and the 4c ​​sealing layer 453 is performed in a vacuum atmosphere.

[0176] Fig.29This is an example of a schematic cross-sectional view of a substrate after the process of step S47. A third light-emitting layer 445 is formed on the third anode electrode 413. In addition, a third cathode electrode 446 is formed on the third light-emitting layer 445. In addition, a 4c sealing layer 453 is formed on the third cathode electrode 446. The opening 426 is filled with the 4c ​​sealing layer 453. Thus, it is possible to avoid the mixing of moisture and oxygen into the film of the third light-emitting layer 445 or the third cathode electrode 446, thereby extending the life of the third light-emitting layer 445. In this way, by the processing of steps S43 to S47, a third stacked body (organic EL element) stacked with the third anode electrode 413, the third light-emitting layer 445, the third cathode electrode 446 and the 4c ​​sealing layer 453 is formed on the substrate.

[0177] (Step S48: Etching)

[0178] In step S48, the third light-emitting layer 445, the third cathode electrode 446, and the 4c ​​sealing layer 453 on the 4b sealing layer 452 are removed by etching. Furthermore, the second light-emitting layer 443, the second cathode electrode 444, the 4b sealing layer 452, and the 4c ​​sealing layer 453 on the 4a sealing layer 451 are removed by etching. Furthermore, the 4a sealing layer 451, the 4b sealing layer 452, the 4c ​​sealing layer 453, the second sealing layer 422, and the third sealing layer 423 of the sealing stack 420 are removed by etching until the first cathode electrode 442, the second cathode electrode 444, and the third cathode electrode 446 are exposed.

[0179] Fig.30 4 is an example of a schematic cross-sectional view of a substrate after the process of step S48. A first light-emitting layer 441 and a first cathode electrode 442 are formed on the first anode electrode 411. A second light-emitting layer 443 and a second cathode electrode 444 are formed on the second anode electrode 412. A third light-emitting layer 445 and a third cathode electrode 446 are formed on the third anode electrode 413.

[0180] In step S49, a wiring layer 461 is formed on the substrate. Here, a continuous film of the wiring layer 461 is formed on the first sealing layer 421, the first cathode electrode 442, the second cathode electrode 444, and the third cathode electrode 446. Thus, the wiring layer 461 is electrically connected to the first cathode electrode 442, the second cathode electrode 444, and the third cathode electrode 446. The wiring layer 461 is composed of, for example, ITO, IZO, etc. In addition, the formation process of the wiring layer 461 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process or a combination thereof.

[0181] In step S50, a fifth sealing layer 462 is formed on the substrate. Here, a continuous film of the fifth sealing layer 462 is formed on the substrate on which the wiring layer 461 is formed. The fifth sealing layer 462 includes an inorganic insulating film. The fifth sealing layer 462 is composed of, for example, any one of SiO, SiN, SiON, and AlO, or a combination thereof. In addition, the formation process of the fifth sealing layer 462 is performed by, for example, vacuum evaporation, PVD film formation, CVD film formation, ALD film formation, or any film formation process, or a combination thereof. In addition, the formation process of the fifth sealing layer 462 is performed in a vacuum atmosphere.

[0182] In addition, in this embodiment, the cathode electrode material and the anode electrode material of the top emission type are described, but it is not limited thereto, and the bottom emission type may also be used. As the cathode electrode material of the bottom emission type, aluminum or the like is preferred, and as the anode electrode material, ITO, IZO or the like is preferred. In the case of a cavity structure, a layer formed of silver or the like may also be sandwiched in the ITO film of the cathode electrode material.

[0183] Fig.31 This is an example of a schematic cross-sectional view of the substrate after the process of step S50. The fifth sealing layer 462 seals the first to third anode electrodes 411, 412, 413, the first to third light-emitting layers 441, 443, 445, the first to third cathode electrodes 442, 444, 446, and the wiring layer 461. Thus, when the substrate is exposed to the atmosphere, the first to third anode electrodes 411, 412, 413, the first to third light-emitting layers 441, 443, 445, the first to third cathode electrodes 442, 444, 446, and the wiring layer 461 are prevented from contacting with oxygen, moisture, and the like.

[0184] As described above, according to the substrate processing method according to the second embodiment, three types of organic EL elements that respectively emit red (R), green (G), and blue (B) light can be formed on a substrate.

[0185] In addition, according to the substrate processing method involved in the second embodiment, the electrodes (the first to third anode electrodes 411, 412, 413, the first to third cathode electrodes 442, 444, 446) and the first to third light-emitting layers 441, 443, 445 are prevented from being deteriorated by moisture, oxygen, etc. during the photolithography process. As a result, the degradation of the organic EL element can be suppressed, thereby extending the life.

[0186] In addition, in the substrate processing method according to the first embodiment, after the fourth sealing layer is formed on the cathode electrode, the fourth sealing layer, the light emitting layer, and the electrode layer are removed from the entire electrode array except for one type of electrode among the plurality of anode electrodes by etching, and then the subsequent photolithography process is performed. In contrast, in the substrate processing method according to the second embodiment, after the fourth sealing layer is formed on the cathode electrode, the subsequent photolithography process is performed without removing the fourth sealing layer, the light emitting layer, and the cathode electrode from the entire electrode array except for one type of electrode among the plurality of anode electrodes by etching.

[0187] Therefore, according to the substrate processing method according to the second embodiment, the number of etching process steps can be reduced compared to the substrate processing method according to the first embodiment, and the productivity of substrate processing for forming a plurality of types of organic EL elements can be further improved.

[0188] [Sealed laminate]

[0189] The process conditions and film hardness when forming the first sealing layer, the second sealing layer, and the third sealing layer of the sealing laminated bodies 320 and 420 to be formed in the first and second embodiments are described.

[0190] As an example of a process condition for controlling the hardness of the first sealing layer, the second sealing layer, and the third sealing layer, pressure can be cited. The etching rate of each of the first sealing layer, the second sealing layer, and the third sealing layer can be controlled by controlling the pressure in the processing container during the film formation. The lower the pressure in the processing container during the film formation, the harder the sealing layer is formed, and the more difficult it is to etch. The higher the pressure is, the softer the sealing layer is formed, and the easier it is to etch.

[0191] Therefore, by controlling the pressure in the processing container during the formation of the second sealing layer to be higher than the pressure in the processing container during the formation of the third sealing layer, the second sealing layer can be made softer than the third sealing layer. In other words, the etching rate of the second sealing layer can be made higher than the etching rate of the third sealing layer.

[0192] The pressure in the processing container during the film formation of the second sealing layer can be 100 mTorr (13.3 Pa) or more and 200 mTorr (26.6 Pa) or less. In addition, the pressure in the processing container during the film formation of the third sealing layer can be 10 mTorr (1.33 Pa) or more and less than 100 mTorr (13.3 Pa). Thus, an umbrella shape can be formed at the end of the sealing stack with respect to the opening.

[0193] In addition, as another example of the process conditions for controlling the hardness of the first sealing layer, the second sealing layer, and the third sealing layer, the gas flow rate can be cited. For example, when the first sealing layer, the second sealing layer, and the third sealing layer are SiN films, the etching rates of the first sealing layer, the second sealing layer, and the third sealing layer can be controlled by controlling the flow ratio of SiH4 gas and N2 gas supplied during the film formation of the first sealing layer, the second sealing layer, and the third sealing layer. The greater the flow rate of SiH4 gas and N2 gas, the harder the sealing layer is formed, and the more difficult it is to etch. The smaller the flow rate of SiH4 gas and N2 gas, the softer the sealing layer is formed, and the easier it is to etch.

[0194] The flow rate ratio of SiH4 gas to N2 gas during the formation of the second sealing layer may be less than 1. In addition, the flow rate ratio of SiH4 gas to N2 gas during the formation of the third sealing layer may be greater than 1. Thus, an umbrella shape can be formed at the end of the sealing laminate with respect to the opening.

[0195] The etching rate of the second sealing layer is higher than that of the third sealing layer. At this time, the etching rate of the third sealing layer can also be higher than that of the first sealing layer. That is, the etching rate of the second sealing layer is the highest, the etching rate of the third sealing layer is the second highest, and the etching rate of the first sealing layer is the lowest.

[0196] By making the etching rate of the second sealing layer higher than the etching rate of the third sealing layer, an umbrella shape can be formed at the end of the sealing laminate for the opening. In addition, by forming the first sealing layer as a hard film with the lowest etching rate, the organic EL element arranged near the first sealing layer can be protected from the influence of moisture and the like.

[0197] However, the relationship between the etching rates of the sealing layers is not limited thereto, and the sealing stack may be formed such that the etching rate of the first sealing layer is greater than or equal to the etching rate of the third sealing layer, and the etching rate of the second sealing layer is higher than that of the first sealing layer.

[0198] Alternatively, the sealing stack may be formed such that the etching rate of the second sealing layer is greater than or equal to the etching rate of the first sealing layer, and the etching rate of the first sealing layer is greater than or equal to the etching rate of the third sealing layer.

[0199] [Etching conditions of the light-emitting layer and cathode electrode]

[0200] When the light-emitting layer and the cathode electrode on the sealed laminate are etched, the fourth sealing layer on the laminate (organic EL element) is also etched. Figure 7In the etching process, when the first light-emitting layer 341 and the first cathode electrode 342 are etched, the 4c ​​sealing layer 453 on the first stack (organic EL element) is also etched. The fourth sealing layer has the function of preventing moisture and oxygen from being mixed into the organic EL element. Therefore, it is preferred to perform the etching process under the process conditions where the etching rate of the light-emitting layer and the cathode electrode 446 is higher than the etching rate of the fourth sealing layer, so that the fourth sealing layer is left as much as possible.

[0201] As an example of such process conditions, when etching the light-emitting layer and the cathode electrode, a mixed gas of H 2 gas and Ar gas or a mixed gas of O 2 gas and Ar gas that can achieve a selectivity with the fourth sealing layer etc. may be used as an etching gas.

[0202] exist Fig.29 In the embodiment, when the third light-emitting layer 445 and the third cathode electrode 446 on the 4b sealing layer 452 are etched, the 4c ​​sealing layer 453 on the third stack (organic EL element) is also etched. When the second light-emitting layer 443 and the second cathode electrode 444 on the 4a sealing layer 451 are etched, the 4b sealing layer 452 on the second stack (organic EL element) is also etched. When the first light-emitting layer 441 and the first cathode electrode 442 on the third sealing layer 423 are etched, the 4a sealing layer 451 on the first stack (organic EL element) is also etched.

[0203] As an example of such process conditions, after etching with a gas capable of etching the 4c ​​sealing layer 453, the gas may be switched when the third light-emitting layer 445 and the third cathode electrode 446 are exposed, and a mixed gas of H2 gas and Ar gas or a mixed gas of O2 gas and Ar gas may be used as the etching gas. Alternatively, after removing the third light-emitting layer 445 and the third cathode electrode 446, etching with a gas capable of etching the 4b sealing layer 452 may be performed, and then, when the second light-emitting layer 443 and the second cathode electrode 444 are exposed, the gas may be switched, and a mixed gas of H2 gas and Ar gas or a mixed gas of O2 gas and Ar gas may be used as the etching gas. Alternatively, after removing the second light-emitting layer 443 and the second cathode electrode 444, etching with a gas capable of etching the 4a sealing layer 451 may be performed, and then, when the first light-emitting layer 441 and the first cathode electrode 442 are exposed, the gas may be switched, and a mixed gas of H2 gas and Ar gas or a mixed gas of O2 gas and Ar gas may be used as the etching gas.

[0204] [Etching Conditions for Sealed Laminated Body]

[0205] The high-frequency power used as the bias etching condition of the sealing stack (the first sealing layer, the second sealing layer, and the third sealing layer) can also be controlled. For example, the high-frequency power used as the bias applied to the stage when etching the second sealing layer can be lower than the high-frequency power used as the bias applied to the stage when etching the third sealing layer. The high-frequency power used as the bias may not be applied when etching the second sealing layer. When etching the second sealing layer, by applying a low-power high-frequency power used as the bias or not applying a high-frequency power used as the bias, isotropic etching can be promoted, and an umbrella shape can be easily formed in the sealing stack.

[0206] When etching the first sealing layer, low-power high-frequency bias power can be supplied, or no high-frequency bias power can be supplied, as when etching the second sealing layer. This can suppress or prevent the plasma used when etching the first sealing layer close to the anode electrode from damaging the anode electrode.

[0207] When etching the third sealing layer, a bias high frequency power higher than that when etching the first sealing layer and the second sealing layer can be supplied, thereby increasing the etching rate of the third sealing layer and improving productivity.

[0208] <First Substrate Processing System>

[0209] Next, use Fig.32 An example of a first substrate processing system 1 of a substrate processing method according to the present embodiment will be described. Fig.32 1 is an example of a plan view showing the structure of the first substrate processing system 1 .

[0210] The first substrate processing system 1 includes a first processing station (substrate processing apparatus) 11 , a load lock module 12 , a carrier station 14 , a second processing station 15 , and a control unit 20 .

[0211] The first processing station 11 has a vacuum transfer module 30 and a plurality of Fig.32 In the example, there are three processing modules 40a, 40b respectively.

[0212] The vacuum transfer module 30 includes a vacuum transfer chamber 31 in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 32 for transferring the substrate G is provided in the vacuum transfer chamber 31. The transfer mechanism 32 transfers the substrate G into and out of the processing modules 40a, 40b (specifically, the vacuum processing chambers 41a, 41b) and the load lock module 12 (specifically, the load lock chamber 13). The transfer mechanism 32 includes a transfer arm 32a for supporting the substrate G when transferring the substrate G.

[0213] The processing modules 40a and 40b have vacuum processing chambers 41a and 41b for performing a predetermined process on the substrate G under reduced pressure. In addition, the vacuum processing chambers 41a and 41b are connected to the vacuum transfer chamber 31 via the gate valve G1. The processing module 40a performs the processes of forming a sealing layer and etching. The processing module 40b performs the processes of forming a light-emitting layer, forming a cathode electrode, and forming a wiring layer. When the process is performed face-down, the processing module 40b may also include a flipping machine for flipping the substrate G.

[0214] The load lock module 12 connecting the first processing station 11 and the carrier station 14 has a load lock chamber 13 configured to be able to switch the interior of the chamber to an atmospheric pressure state or a vacuum state. The load lock chamber 13 is connected to the vacuum transfer chamber 31 via a gate valve G2. The load lock chamber 13 is connected to the atmospheric transfer chamber 51 via a gate valve G3.

[0215] The load lock module 12 connecting one vacuum transfer module 30 to another vacuum transfer module 30 has a load lock chamber 13 configured to switch the vacuum state in the chamber. The load lock chamber 13 is connected to the vacuum transfer chamber 31 of one vacuum transfer module 30 via one gate valve G2. The load lock chamber 13 is connected to the vacuum transfer chamber 31 of the other vacuum transfer module 30 via another gate valve G2.

[0216] The carrier station 14 carries in and carries out a carrier C capable of accommodating a plurality of substrates G. In addition, the carrier station 14 includes an atmospheric transfer chamber 51 in which the interior is maintained at an atmospheric pressure state. A transfer mechanism 52 for transferring the substrate G is provided in the atmospheric transfer chamber 51. The transfer mechanism 52 carries in and carries out the substrate G between the carrier C mounted on the carrier mounting table 53 and the load lock module 12 (specifically, the load lock chamber 13). The transfer mechanism 52 includes a transfer arm 52a for supporting the substrate G when transferring the substrate G.

[0217] The second processing station 15 has an atmospheric transfer module 60 and a plurality of ( Fig.32 In the example, there are three) processing modules 70.

[0218] The atmospheric transfer module 60 includes an atmospheric transfer chamber 61 in which the atmosphere is maintained. A transfer mechanism 62 for transferring the substrate G is provided in the atmospheric transfer chamber 61. The transfer mechanism 62 transfers the substrate G into and out of the processing module 70 (specifically, the atmospheric processing chamber 71). The transfer mechanism 62 includes a transfer arm 62a for supporting the substrate G when transferring the substrate G.

[0219] The processing module 70 includes an atmospheric processing chamber 71 for performing a predetermined process under atmospheric pressure on the substrate G. The atmospheric processing chamber 71 is connected to the atmospheric transfer chamber 61 via a gate valve G4. The processing module 70 performs each process of the photolithography process (resist formation process, exposure process, and development process).

[0220] In addition, the atmospheric transfer chamber 51 of the carrier station 14 and the atmospheric transfer chamber 61 of the second processing station 15 may be connected through a passage module (not shown) so that the substrate G can be transferred between the atmospheric transfer chamber 51 and the atmospheric transfer chamber 61. In addition, the atmospheric transfer chamber 61 of the second processing station 15 may be configured to have a carrier placement table (not shown) so that the substrate G can be transferred between the atmospheric transfer chamber 51 and the atmospheric transfer chamber 61 by transferring the carrier C containing the substrate G.

[0221] The control unit 20 includes a computer having a processor such as a CPU, a memory, etc., and has a storage unit (not shown) for storing various information. A program including instructions for a processing sequence to be executed by the first substrate processing system 1 is stored in the storage unit. In addition, the program may be recorded in a computer-readable storage medium and installed in the control unit 20 from the storage medium. In addition, the storage medium may be temporary or non-temporary.

[0222] With such a structure, the substrate processing method according to the first embodiment (see Figure 1 ), in the processes other than step S3, step S9, and step S15, the substrate G is transported through the load lock vacuum chamber 13 between the vacuum transport chamber 31 and the vacuum transport chamber 31. Thus, the substrate G can be processed without exposing the substrate G to the atmosphere. Thus, the degradation of the organic EL element due to moisture, oxygen, etc. can be suppressed.

[0223] With such a structure, the substrate processing method according to the second embodiment (see Fig.18 ), in the processes other than step S33, step S38, and step S43, the substrate G is transported through the load lock vacuum chamber 13 between the vacuum transport chamber 31 and the vacuum transport chamber 31. Thus, the substrate G can be processed without exposing the substrate G to the atmosphere. Thus, the degradation of the organic EL element due to moisture, oxygen, etc. can be suppressed.

[0224] That is, the first processing station 11 includes a vacuum processing chamber 41a (sealing layer forming processing module) for performing a sealing layer formation process, a vacuum processing chamber 41a (etching processing module) for performing an etching process, a vacuum processing chamber 41b (light emitting layer forming processing module) for performing a light emitting layer formation process, a vacuum processing chamber 41b (electrode layer forming processing module) for performing a cathode electrode layer formation process, a vacuum processing chamber 41b (wiring layer forming processing module) for performing a wiring layer formation process, and a vacuum transfer chamber 31 (vacuum transfer module) connecting these vacuum processing chambers. The substrate G formed with the anode electrode is transferred from the load lock vacuum chamber 13 to the first processing station 11. First, the substrate G is transferred to the vacuum processing chamber 41a for performing a sealing layer formation process to perform a sealing layer formation process (e.g., step S2). Specifically, the film formation of the sealing laminate of the first sealing layer, the second sealing layer, and the third sealing layer is performed. After the film formation of the sealed stack is performed on the substrate G, the substrate G is unloaded from the load lock vacuum chamber 13 and transported to the processing module 70 via the atmospheric transport module 60 to perform photolithography processing (e.g., step S3). Next, the substrate G is transported to the vacuum processing chamber 41a for etching processing via the load lock vacuum chamber 13 and the vacuum transport chamber 31 to perform etching processing (e.g., step S4). Next, the substrate G is transported to the vacuum processing chamber 41b for forming the light-emitting layer and the cathode electrode via the vacuum transport chamber 31 to perform the formation processing of the light-emitting layer and the cathode electrode (e.g., steps S5 and S6). Next, the substrate G is transported to the vacuum processing chamber 41a for forming the sealing layer to perform the formation processing of the sealing layer (e.g., step S7). Next, the substrate G is transported to the vacuum processing chamber 41a for etching processing to perform etching processing (e.g., step S8). After repeating these processes (e.g., steps S9 to S20), the substrate G is transported to the vacuum processing chamber 41b for performing the wiring layer formation process to implement the wiring layer formation process (e.g., step S21). Finally, the substrate G is transported to the vacuum processing chamber 41a for performing the sealing layer formation process to implement the sealing layer formation process (e.g., step S22). In addition, the substrate G can be moved in and out of either of the two load lock vacuum chambers 13 connected to the carrier station 14. The temperature of the vacuum processing chambers 41a and 41b is controlled to be below 100°C. This is because the light-emitting layer will be damaged if the temperature is above 100°C, so that the light-emitting function will deteriorate or disappear.

[0225] Regarding the organic EL layer materials used in the organic EL element, there are materials such as organic compounds that are easily deteriorated by moisture, oxygen, etc. In contrast, in the first substrate processing system 1, the film formation of the light-emitting layer and the sealing layer and the etching of various films are performed in the first substrate processing system 1 without being exposed to the atmosphere. As a result, the influence of moisture, oxygen, etc. can be suppressed and the photolithography process for the stacked body including a specific type of organic EL layer can be reduced once, and the difficulty of processing the umbrella shape of the organic EL element (pixel part) can be reduced to improve productivity, thereby suppressing the production cost of the organic EL element manufactured locally.

[0226] <Second Substrate Processing System>

[0227] Next, use Fig.33 An example of the second substrate processing system 101 for implementing the substrate processing method according to the present embodiment will be described. Fig.33 1 is an example of a plan view showing the structure of the second substrate processing system 101 .

[0228] The second substrate processing system 101 includes first processing stations (substrate processing apparatuses) 111 a - 111 d , load lock modules 112 a - 112 e , carrier stations 114 a and 114 b , a second processing station 115 , and a control unit 120 .

[0229] The first processing station 111a has a vacuum transfer module 130a and a plurality of ( Fig.33 In the example, there are two) processing modules 140a.

[0230] The vacuum transfer module 130a includes a vacuum transfer chamber 131a in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 132a for transferring the substrate G is provided in the vacuum transfer chamber 131a. The transfer mechanism 132a transfers the substrate G in and out of the processing module 140a (specifically, the vacuum processing chamber 141a) and the load lock vacuum modules 112a and 112b (specifically, the load lock vacuum chambers 113a and 113b). The transfer mechanism 132a includes a transfer arm 132a1 for supporting the substrate G when transferring the substrate G.

[0231] The processing module 140a includes a vacuum processing chamber 141a for performing a predetermined process under reduced pressure on the substrate G. The vacuum processing chamber 141a is connected to the vacuum transfer chamber 131a via a gate valve G101a. The processing module 140a performs a sealing layer forming process.

[0232] The first processing station 111b has a vacuum transfer module 130b and a plurality of ( Fig.33 In the example, there are two) processing modules 140b.

[0233] The vacuum transfer module 130b has a vacuum transfer chamber 131b in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 132b for transferring the substrate G is provided in the vacuum transfer chamber 131b. The transfer mechanism 132b transfers the substrate G in and out of the processing module 140b (specifically, the vacuum processing chamber 141b) and the load lock vacuum modules 112b and 112c (specifically, the load lock vacuum chambers 113b and 113c). The transfer mechanism 132b has a transfer arm 132b1 that supports the substrate G when transferring the substrate G.

[0234] The processing module 140b includes a vacuum processing chamber 141b for performing a predetermined process under reduced pressure on the substrate G. The vacuum processing chamber 141b is connected to the vacuum transfer chamber 131b via a gate valve G101b. The processing modules 140b perform etching processes.

[0235] The first processing station 111c has a vacuum transfer module 130c and a plurality of ( Fig.33 In the example, there are two) processing modules 140c.

[0236] The vacuum transfer module 130c includes a vacuum transfer chamber 131c in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 132c for transferring the substrate G is provided in the vacuum transfer chamber 131c. The transfer mechanism 132c transfers the substrate G in and out of the processing module 140c (specifically, the vacuum processing chamber 141c) and the load lock vacuum modules 112c and 112d (specifically, the load lock vacuum chambers 113c and 113d). The transfer mechanism 132c includes a transfer arm 132c1 for supporting the substrate G when transferring the substrate G.

[0237] The processing module 140c has a vacuum processing chamber 141c for performing a predetermined process on the substrate G under reduced pressure. In addition, the vacuum processing chamber 141c is connected to the vacuum transfer chamber 131c via a gate valve G101c. The processing module 140c performs the formation process of the light-emitting layer. In the case of performing the process in a face-down manner, the processing module 140b may also include a flipping machine for flipping the substrate G.

[0238] The first processing station 111d has a vacuum transfer module 130d and a plurality of ( Fig.33 In the example, there are two) processing modules 140d.

[0239] The vacuum transfer module 130d includes a vacuum transfer chamber 131d in which the interior is maintained in a reduced pressure state (vacuum state). A transfer mechanism 132d for transferring the substrate G is provided in the vacuum transfer chamber 131d. The transfer mechanism 132d transfers the substrate G in and out of the processing module 140d (specifically, the vacuum processing chamber 141d) and the load lock vacuum modules 112d and 112e (specifically, the load lock vacuum chambers 113d and 113e). The transfer mechanism 132d includes a transfer arm 132d1 for supporting the substrate G when transferring the substrate G.

[0240] The processing module 140d has a vacuum processing chamber 141d for performing a predetermined process on the substrate G under reduced pressure. In addition, the vacuum processing chamber 141d is connected to the vacuum transfer chamber 131d via a gate valve G101d. The processing module 140d performs the formation process of the cathode electrode and the formation process of the wiring layer, respectively. The formation process of the sealing layer. In the case of performing the process in a face-down manner, the processing module 140d may also include a flipping machine for flipping the substrate G.

[0241] The load lock module 112a has a load lock chamber 113a configured to switch the interior of the chamber to an atmospheric pressure state or a vacuum state. In addition, the load lock module 112a connects the first processing station 111a and the carrier station 114a. The load lock chamber 113a is connected to the vacuum transfer chamber 131a via a gate valve G102a. The load lock chamber 113a is connected to the atmospheric transfer chamber 151a via a gate valve G103a.

[0242] The load lock module 112b has a load lock chamber 113b configured to switch the vacuum state in the chamber. In addition, the load lock module 112b connects the first processing station 111a with the first processing station 111b. The load lock chamber 113b is connected to the vacuum transfer chamber 131b via a gate valve G102b. The load lock chamber 113b is connected to the vacuum transfer chamber 131a via a gate valve G103b.

[0243] The load lock module 112c has a load lock chamber 113c configured to switch the vacuum state in the chamber. In addition, the load lock module 112c connects the first processing station 111b with the first processing station 111c. The load lock chamber 113c is connected to the vacuum transfer chamber 131c via a gate valve G102c. The load lock chamber 113c is connected to the vacuum transfer chamber 131b via a gate valve G103c.

[0244] The load lock module 112d has a load lock chamber 113d configured to switch the vacuum state in the chamber. In addition, the load lock module 112d connects the first processing station 111c with the first processing station 111d. The load lock chamber 113d is connected to the vacuum transfer chamber 131d via a gate valve G102d. The load lock chamber 113d is connected to the vacuum transfer chamber 131c via a gate valve G103d.

[0245] The load lock module 112e has a load lock chamber 113e configured to switch the interior of the chamber to an atmospheric pressure state or a vacuum state. In addition, the load lock module 112e connects the first processing station 111d and the carrier station 114b. The load lock chamber 113e is connected to the atmospheric transfer chamber 151b via a gate valve G102e. The load lock chamber 113e is connected to the vacuum transfer chamber 131d via a gate valve G103e.

[0246] The carrier station 114a carries in and carries out a carrier C capable of accommodating a plurality of substrates G. In addition, the carrier station 114a includes an atmospheric transfer chamber 151a in which the interior is maintained at an atmospheric pressure state. A transfer mechanism 152a for transferring the substrate G is provided in the atmospheric transfer chamber 151a. The transfer mechanism 152a carries in and carries out the substrate G between the carrier C placed on the carrier mounting table (not shown) and the load lock module 112a (specifically, the load lock chamber 113a). The transfer mechanism 152a includes a transfer arm 152a1 for supporting the substrate G when transferring the substrate G.

[0247] The carrier station 114b carries in and carries out a carrier C capable of accommodating a plurality of substrates G. In addition, the carrier station 114b has an atmospheric transfer chamber 151b in which the interior is maintained at an atmospheric pressure state. A transfer mechanism 152b for transferring the substrate G is provided in the atmospheric transfer chamber 151b. The transfer mechanism 152b carries in and carries out the substrate G between the carrier C placed on the carrier placing table (not shown) and the load lock vacuum module 112e (specifically, the load lock vacuum chamber 113e). The transfer mechanism 152b has a transfer arm 152b1 for supporting the substrate G when transferring the substrate G.

[0248] The second processing station 115 has an atmospheric transport module 160 and a plurality of ( Fig.33 In the example, there are three) processing modules 170.

[0249] The atmospheric transfer module 160 includes an atmospheric transfer chamber 161 in which the atmosphere is maintained. A transfer mechanism 162 for transferring the substrate G is provided in the atmospheric transfer chamber 161. The transfer mechanism 162 transfers the substrate G into and out of the processing module 170 (specifically, the atmospheric processing chamber 171). The transfer mechanism 162 includes a transfer arm 162a for supporting the substrate G when transferring the substrate G.

[0250] The processing module 170 includes an atmospheric processing chamber 171 for performing a predetermined process under atmospheric pressure on the substrate G. The atmospheric processing chamber 171 is connected to the atmospheric transfer chamber 161 via a gate valve G104. The processing module 170 performs each process of the photolithography process (resist formation process, exposure process, and development process).

[0251] In addition, the atmospheric transfer chambers 151a and 151b of the carrier stations 114a and 114b and the atmospheric transfer chamber 161 of the second processing station 115 may also be configured to be connected through a passage module (not shown) so that the substrate G can be transferred between the atmospheric transfer chambers 151a and 151b and the atmospheric transfer chamber 161. In addition, the atmospheric transfer chamber 161 of the second processing station 115 may also be configured to have a carrier placement table (not shown) so that the substrate G can be transferred between the atmospheric transfer chambers 151a and 151b and the atmospheric transfer chamber 161 by transferring the carrier C containing the substrate G.

[0252] The control unit 120 includes a computer having a processor such as a CPU, a memory, etc., and has a storage unit (not shown) for storing various information. A program including instructions for a processing sequence to be executed by the second substrate processing system 101 is stored in the storage unit. In addition, the program may be recorded in a computer-readable storage medium and installed in the control unit 120 from the storage medium. In addition, the storage medium may be temporary or non-temporary.

[0253] That is, the first processing stations 111a~111d include a vacuum processing chamber 141a (sealing layer forming processing module) for performing a sealing layer formation process, a vacuum processing chamber 141b (etching processing module) for performing an etching process, a vacuum processing chamber 141c (light-emitting layer forming processing module) for performing a light-emitting layer formation process, a vacuum processing chamber 141d (electrode layer forming processing module, wiring layer forming processing module) for performing a cathode electrode and a wiring layer formation process, and vacuum conveying chambers 131a~131d connecting them.

[0254] The substrate G formed with the anode electrode is transported from the load lock vacuum chamber 113a to the first processing station 111a. First, the substrate G is transported to the vacuum processing chamber 141a for performing the formation process of the sealing layer to implement the formation process of the sealing layer (for example, step S2). Specifically, the film formation of the sealing stack of the first sealing layer, the second sealing layer, and the third sealing layer is performed. After the film formation of the sealing stack, the substrate G is moved out of the load lock vacuum chamber 113a and transported to the processing module 170 via the atmospheric transport module 160 to implement the photolithography process (for example, step S3). Then, the substrate G is transported to the vacuum processing chamber 141b for etching processing via the load lock vacuum chamber 113a and the vacuum transport chamber 131b to implement the etching process (for example, step S4). Then, the substrate G is transported to the vacuum processing chamber 141c for forming the light-emitting layer via the vacuum transport chamber 131c to implement the formation process of the light-emitting layer (for example, step S5). Next, the substrate G is transported to the vacuum processing chamber 141d for forming the cathode electrode via the vacuum transport chamber 131d to perform the cathode electrode forming process (e.g., step S6). Next, the substrate G is transported to the vacuum processing chamber 141a for forming the sealing layer to perform the sealing layer forming process (e.g., step S7). Next, the substrate G is transported to the vacuum processing chamber 141b for etching to perform the etching process (e.g., step S8). After repeating these processes (e.g., steps S9 to S20), the substrate G is transported to the vacuum processing chamber 141d for forming the wiring layer to perform the wiring layer forming process (e.g., step S21). Finally, the substrate G is transported to the vacuum processing chamber 141a for forming the sealing layer to perform the sealing layer forming process (e.g., step S22). In addition, in the present embodiment, the substrate G is transported in from the load lock chamber 113a, but the substrate G may be transported in and out relative to either the load lock chamber 113a or 113e. The temperature of the vacuum processing chambers 141a to 141d is controlled to be 100° C. or less. This is because if the temperature is higher than 100° C., the light-emitting layer will be damaged, and the light-emitting function will be degraded or disappear.

[0255] <Substrate processing apparatus>

[0256] Next, use Fig.34 An example of a processing module 40 a for implementing the substrate processing methods according to the first embodiment and the second embodiment will be described. Fig.34 1 is an example of a schematic cross-sectional view showing the structure of the process module 40a according to the present embodiment. The process modules 140a and 140b may have the same structure as the process module 40a, and therefore, the structure example of the process module 40a will be described here.

[0257] The processing module 40a has a processing container 290. The processing container 290 is made of metal such as aluminum and is grounded. An opening is formed on the upper surface of the processing container 290. The opening is sealed by a rectangular metal window 220. The space surrounded by the processing container 290 and the metal window 220 is a processing space K1 where the substrate G is located when the plasma treatment is performed. The space above the metal window 220 is an antenna room K2 for configuring a high-frequency antenna 295. A transport port for transporting the substrate G and a gate valve for opening and closing the transport port (both not shown) are provided on the side of the processing space K1.

[0258] A mounting table 230 is provided at the bottom of the processing space K1. The mounting table 230 has a main body 231 including a base 231a and an electrostatic holding disk 231b for electrostatically adsorbing the substrate G. The main body 231 is provided at the bottom of the processing container 290 via legs 232.

[0259] The base 231a is connected to an RF bias power supply 241 via a matching device 240. The RF bias power supply 241 supplies, for example, 3.2 MHz high frequency power as bias high frequency power to the base 231a. Thus, ions in the plasma generated in the processing space K1 can be attracted to the substrate G.

[0260] An exhaust port 291 is formed at the bottom of the processing container 290, and an exhaust device 250 including a vacuum pump or the like is connected to the exhaust port 291. The exhaust device 250 reduces the pressure inside the processing container 290.

[0261] A metal frame 280 formed of a metal such as aluminum is disposed on the outer periphery of the metal window 220 via an insulating member 223. The metal frame 280 is located on the upper surface side of the side wall of the processing container 290, and a sealing member 211 for keeping the processing space K1 airtight is provided between the processing container 290 and the metal frame 280. The metal window 220 is electrically insulated from the metal frame 280 by the insulating member 223.

[0262] The chamber is divided by the processing container 290, the metal window 220 and the metal frame 280. Fig.32 The vacuum processing chamber 41a and Fig.32 The metal window 220 has a gas hole 221 and a diffusion chamber 222, and functions as a shower head for supplying gas to the processing space K1. The diffusion chamber 222 is connected to the etching gas supply unit 200-202, the film forming gas supply unit 203, and the ashing gas supply unit 204 via the supply pipe 210. In addition, the metal window 220 can also be composed of a plurality of divided windows.

[0263] The etching gas supply unit 200 supplies etching gas for the sealing layer (inorganic insulating film). The etching gas supply unit 201 supplies etching gas for the cathode electrode. The etching gas supply unit 202 supplies etching gas for the light-emitting layer. The film-forming gas supply unit 203 supplies film-forming gas for the sealing layer (inorganic insulating film). The ashing gas supply unit 204 supplies ashing gas for the mask of the resist.

[0264] The etching gas supply units 200-202, the film forming gas supply unit 203, and the ashing gas supply unit 204 each have an on-off valve (not shown) for switching the start / stop of gas supply, a flow controller (not shown) for adjusting the flow rate of the supplied gas, etc. The etching gas supply units 200-202, the film forming gas supply unit 203, and the ashing gas supply unit 204 are configured to be able to adjust the mixing ratio when supplying a mixed gas mixed with multiple gases. In addition, a purge gas unit (not shown) for supplying a purge gas such as an inert gas is also connected to the diffusion chamber 222.

[0265] The high frequency antenna 295 is arranged to be separated from the metal window 220 via a spacer (not shown) formed of an insulating material. The high frequency antenna 295 is connected to an RF source power supply 243 via a matching device 242. The RF source power supply 243 supplies a high frequency power of, for example, 13.56 MHz as a source high frequency power to the high frequency antenna 295. Thus, during the plasma processing, an induced electric field is formed inside the processing space K1 via the metal window 220, and the gas introduced from the gas hole 221 is plasmatized by the induced electric field.

[0266] When the sealing stack 320 and 420 are formed, the pressure in the processing container 290 can be controlled as follows by supplying gas and exhausting by the exhaust device 250. For example, the pressure in the processing container 290 when the second sealing layer is formed can be controlled to be 100 mTorr (13.3 Pa) or more and 200 mTorr (26.6 Pa or less, and the pressure in the processing container 290 when the second sealing layer is formed can be controlled to be 10 mTorr (1.33 Pa) or more and less than 100 mTorr (13.3 Pa) or less.

[0267] When forming the sealing stack 320, 420, the flow rate of the gas can be controlled as follows. For example, the flow rate ratio of SiH4 gas to N2 gas when forming the second sealing layer can be controlled to be less than 1, and the flow rate ratio of SiH4 gas to N2 gas when forming the third sealing layer can be controlled to be greater than 1.

[0268] When etching the sealing stack 320, 420, the high frequency bias power supplied from the RF bias power supply 241 can be controlled. When etching the second sealing layer, a low-power high frequency bias power can be supplied compared to when etching the third sealing layer. When etching the first sealing layer, a high frequency bias power of the same power as when etching the second sealing layer can be supplied.

[0269] In addition, in the present embodiment, an inductively coupled plasma apparatus having the metal window 220 is described as a substrate processing apparatus, but the present invention is not limited thereto, and an inductively coupled plasma apparatus having a dielectric window instead of the metal window 220 may be used. In addition, the plasma generation method applied to the substrate processing apparatus is not limited to the inductively coupled plasma, and the substrate processing apparatus may use other plasma generation methods such as capacitively coupled plasma and microwave plasma.

[0270] As described above, according to the first embodiment and the second embodiment, a substrate processing method and a substrate processing system that improve productivity are provided.

[0271] The substrate processing method and substrate processing system involved in the embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The embodiments can be modified and improved in various ways without departing from the attached claims and their gist. The matters described in the above-mentioned multiple embodiments can also adopt other structures within the scope of non-contradiction, and can be combined within the scope of non-contradiction.

[0272] Description of Reference Numerals

[0273] 1: first substrate processing system; 101: second substrate processing system; 11, 111a~111d: first processing station; 12, 112a~112e: load lock vacuum module; 13, 113a~113e: load lock vacuum chamber; 14, 114a~114b: carrier station; 15, 115: second processing station; 20, 120: control unit; 30, 130a~130d: vacuum transfer module; 31, 131a~131d: vacuum transfer chamber; 32, 132a~132d: transfer mechanism; 32a, 132a1~132d1: transfer arm; 40a, 40b, 140a~140d: processing module; 41a, 4 1b, 141a~141d: vacuum processing chamber; 51, 151a~151b: atmospheric transfer chamber; 52, 152a~152b: transfer mechanism; 52a, 152a1~152b1: transfer arm; 53: carrier mounting table; 60, 160: atmospheric transfer module; 61, 161: atmospheric transfer chamber; 62, 162: transfer mechanism; 62a, 162a: transfer arm; 70, 170: processing module; 71, 171: atmospheric processing chamber; G1~G4, G101a~G104: gate valve; G: substrate; C: carrier; 300: substrate; 310: electrode array; 311: first anode electrode; 312: second anode electrode; 31 3: third anode electrode; 320: sealing laminate; 321: first sealing layer; 322: second sealing layer; 323: third sealing layer; 324: opening; 325: opening; 326: opening; 331: first mask; 332: second mask; 333: third mask; 341: first light-emitting layer; 343: second light-emitting layer; 345: third light-emitting layer; 342: first cathode electrode; 344: second cathode electrode; 346: third cathode electrode; 351: 4a sealing layer; 352: 4b sealing layer; 353: 4c sealing layer; 361: wiring layer; 362: fifth sealing layer; 400: substrate; 410: electrode array; 411: A first anode electrode; 412: a second anode electrode; 413: a third anode electrode; 420: a sealing stack; 421: a first sealing layer; 422: a second sealing layer; 423: a third sealing layer; 424: an opening; 425: an opening; 426: an opening; 431: a first mask; 432: a second mask; 433: a third mask; 441: a first light-emitting layer; 443: a second light-emitting layer; 445: a third light-emitting layer; 442: a first cathode electrode; 444: a second cathode electrode; 446: a third cathode electrode; 451: a 4a sealing layer; 452: a 4b sealing layer; 453: a 4c sealing layer; 461: a wiring layer; 462: a fifth sealing layer.

Claims

1. A substrate processing method, comprising the following steps: Step (A), preparing a substrate, wherein the substrate has an electrode array formed by configuring a plurality of electrodes on a surface of the substrate; Step (B), forming a sealing laminated body on the entire electrode array, wherein the sealing laminated body has three or more sealing layers stacked in the order of a first sealing layer, a second sealing layer, and a third sealing layer, and the sealing laminated body is formed in such a manner that an etching rate of the second sealing layer is higher than an etching rate of the third sealing layer; Step (C), forming a mask on the sealed laminated body where one type of electrode among the plurality of electrodes is not arranged; (D) etching the substrate using the mask to form an umbrella shape with respect to the opening at the end of the sealing laminate so as to expose the one type of electrode; as well as Step (E): after step (D), forming a light emitting layer and an electrode layer on the entire electrode array.

2. The substrate processing method according to claim 1, wherein: The sealing laminate is composed of any one of SiN, SiON, SiO, and AlO, or a combination of more than one of them.

3. The substrate processing method according to claim 1 or 2, wherein: In the step (B), the sealing laminate is formed so that an etching rate of the third sealing layer is higher than an etching rate of the first sealing layer.

4. The substrate processing method according to claim 1 or 2, wherein: In the step (B), the sealing stack is formed such that an etching rate of the first sealing layer is equal to or higher than an etching rate of the third sealing layer, and an etching rate of the second sealing layer is higher than an etching rate of the first sealing layer.

5. The substrate processing method according to claim 1 or 2, wherein: In the step (B), the sealing stack is formed such that the etching rate of the second sealing layer is equal to or higher than the etching rate of the first sealing layer, and the etching rate of the first sealing layer is higher than the etching rate of the third sealing layer.

6. The substrate processing method according to claim 1 or 2, wherein: In the step (B), the etching rates of the first sealing layer, the second sealing layer, and the third sealing layer are controlled by controlling the pressure in the processing container during the formation of each of the first sealing layer, the second sealing layer, and the third sealing layer.

7. The substrate processing method according to claim 6, wherein: In the step (B), control is performed such that the pressure in the processing container during the formation of the second sealing layer is higher than the pressure in the processing container during the formation of the third sealing layer.

8. The substrate processing method according to claim 7, wherein: The pressure in the processing container during the formation of the second sealing layer is 100 mTorr (13.3 Pa) or more and 200 mTorr (26.6 Pa) or less. The pressure in the processing container during the formation of the third sealing layer is greater than or equal to 10 mTorr (1.33 Pa) and less than 100 mTorr (13.3 Pa).

9. The substrate processing method according to claim 2, wherein: The first sealing layer, the second sealing layer and the third sealing layer are made of SiN, In the step (B), the etching rates of the first sealing layer, the second sealing layer and the third sealing layer are controlled by controlling the flow ratio of SiH4 gas and N2 gas supplied when the first sealing layer, the second sealing layer and the third sealing layer are formed.

10. The substrate processing method according to claim 9, wherein: In the step (B), control is performed so that the flow rate ratio of SiH 4 gas to N 2 gas during the formation of the second sealing layer is smaller than the flow rate ratio of SiH 4 gas to N 2 gas during the formation of the third sealing layer.

11. The substrate processing method according to claim 10, wherein: The flow rate ratio of the SiH4 gas to the N2 gas during the formation of the second sealing layer is 1 or less. The flow rates of the SiH 4 gas and the N 2 gas during the formation of the third sealing layer are greater than 1.

12. The substrate processing method according to claim 1 or 2, wherein: It also includes the following steps: Step (F), after step (E), forming a fourth sealing layer on the electrode layer, and forming the sealing laminated body on the entire electrode array except for the one type of electrodes among the plurality of electrodes; as well as After the step (F), the steps (C) to (F) are repeated by treating other types of electrodes among the plurality of electrodes as one type of electrode to form a stacked body array in which a stacked body formed by the first sealing layer, the light-emitting layer emitting light of different colors, and the electrode layer is exposed.

13. The substrate processing method according to claim 12, wherein: After forming the fourth sealing layer on the electrode layer in the step (F), the fourth sealing layer, the light-emitting layer and the electrode layer are removed from the entire electrode array except for the one type of electrode among the plurality of electrodes by etching, and then the step (C) is performed.

14. The substrate processing method according to claim 12, wherein: After forming a fourth sealing layer on the electrode layer in the step (F), the step (C) is performed without removing the fourth sealing layer, the light-emitting layer, and the electrode layer from the entire electrode array except for the one type of electrode among the plurality of electrodes by etching.

15. The substrate processing method according to claim 12, wherein: The electrode array includes three types of electrodes.

16. The substrate processing method according to claim 15, wherein: The three kinds of electrodes include the electrode having the light-emitting layer that emits red light, the electrode having the light-emitting layer that emits blue light, and the electrode having the light-emitting layer that emits green light.

17. The substrate processing method according to claim 1 or 2, wherein: The mask is a photoresist mask.

18. The substrate processing method according to claim 1 or 2, wherein: In the step (B), the high frequency bias power applied to the stage in the processing container when etching the second sealing layer is lower than the high frequency bias power applied to the stage when etching the third sealing layer.

19. The substrate processing method according to claim 1 or 2, wherein: The etching gas supplied in the step (D) is a fluorine-containing gas.

20. A substrate processing system for processing a substrate, wherein the substrate has an electrode array formed by configuring a plurality of electrodes on a surface of the substrate, a sealing stack is formed on the entire electrode array, the sealing stack has three or more sealing layers stacked in the order of a first sealing layer, a second sealing layer, and a third sealing layer, and the sealing stack is formed in such a way that an etching rate of the second sealing layer is higher than an etching rate of the third sealing layer, and a mask is provided on the sealing stack where one type of electrode among the plurality of electrodes is not configured, the substrate processing system comprising: an etching processing module for etching the substrate using the mask to form an umbrella shape with respect to the opening at the end of the sealing laminate so as to expose the one type of electrode; a light-emitting layer forming processing module, which forms a light-emitting layer on the entire electrode array after forming the opening; An electrode layer forming processing module, which forms an electrode layer on the substrate having the light-emitting layer formed thereon; a sealing layer forming processing module, which forms a fourth sealing layer on the substrate on which the light emitting layer and the electrode layer are formed; and A vacuum transport module connects the etching process module, the light emitting layer forming process module, the electrode layer forming process module and the sealing layer forming process module.

Images