A method for preparing a reconfigurable memristor based on a nano-pore structure

Abstract

The application belongs to the fields of semiconductor technology, biological thin film technology and neuromorphic computing, and discloses a preparation method of a reconfigurable memristor with a nanopore structure, comprising the following steps: step 1, configuring a polymer solution; step 2, pretreating a substrate; step 3, using the polymer solution to perform spin coating on the substrate; step 4, preparing a nanopore polymer thin film layer with a nanopore structure; step 5, vacuum evaporation to obtain a small-molecule resistive switching layer thin film; step 6, evaporating a top electrode; and step 7, cooling the top electrode to room temperature and taking out, so that a single device of the reconfigurable memristor based on the nanopore structure can be obtained. The nanopore structure of the polymer thin film layer is used to provide a fast channel for ion migration, and by changing the thickness of the small-molecule resistive switching layer thin film, the conversion of the memristor between a resistive random access memory and a dynamic memristor is realized, so that the memristor can simultaneously have the advantages of efficient information storage of the resistive random access memory and the advantages of simulating the nonlinear integration function of a dendrite of the dynamic memristor.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of semiconductor technology, biological thin film technology and neuromorphic computing, and particularly relates to a preparation method of a reconfigurable memristor based on a nanopore structure. BACKGROUND

[0002] With the rapid development of information technology, the demand for memory is increasing. However, traditional memory technologies such as flash memory and dynamic random access memory face certain bottlenecks in terms of density, power consumption and performance. Therefore, researchers have begun to explore new memory technologies to meet this challenge. Memristor, as a new type of memory, has the advantages of low power consumption, high density, fast read-write speed and excellent durability. By applying a voltage across the two ends of the memristor, the resistive switching material can form or break conductive filaments between the upper and lower electrodes, causing the device to switch between high resistance and low resistance states. Due to its simple structure, mature process and compatibility with CMOS technology, memristor has become one of the strong competitors in new memory technologies in the post-moore era.

[0003] In biological neural networks, neurons are composed of dendrites, cell bodies and axons. Dendrites are responsible for receiving input signals from other neurons and integrating them before passing them to the cell body. The active and passive characteristics of dendrites play a key role in information processing, not only nonlinearly integrating input signals, but also integrating spatial and temporal information and filtering out irrelevant background noise. Dendrites with active characteristics can generate local dendritic spikes and perform superlinear integration of input signals, while dendrites with passive characteristics perform sublinear integration. These two dendritic characteristics effectively enhance the computational ability of neurons, enabling biological neural networks to more flexibly and efficiently process complex tasks. However, the commonly used classical neuron model usually ignores the function of dendrites and relies on capacitors to integrate input information. This method cannot filter background noise and cannot simulate the nonlinear integration function of dendrites. Therefore, exploring dynamic memristors with volatility and the ability to integrate spatial and temporal information is crucial for improving the performance of neural networks.

[0004] In the field of neuromorphic computing research, sandwich-structured memristors, as an interface-engineered electronic device, the core of their electrical performance regulation lies in the coordination between different interfaces. Therefore, people's research work mainly focuses on regulating and optimizing the interface of the memristor. Among them, the micro-nano structure of the thin film is one of the key technologies to realize the interface regulation of the memristor. By introducing various micro-nano structures such as nanopores, nanocolumns, conical pores + nanofolds into the functional layer thin film, the ion transport process can be significantly regulated.

[0005] While the unique ion fine-tuning ability of the nanopore structure makes it have shown the effect of reducing the switching voltage, improving the switching uniformity and durability in the previous digital type memristor. At the same time, the nanopore structure also shows significant advantages in the application research of neuromorphic computing, especially in the directional transmission and fine-tuning ability of ions, which is crucial for simulating the biological nervous system.

[0006] In recent years, people have carried out extensive research on the memristor based on the nanopore structure. For example, the nanopore structure memristor using Al / PVK / ITO stack realizes the transition of high and low resistance states. However, the current research on the nanopore structure memristor is still mainly based on a single layer structure. The conductive filament of the single-layer nanopore structure memristor has the problems of randomness and fragility, which leads to high operating voltage, small dynamic range, poor data stability, high control cost, and single working mode, which is not conducive to simulating the biological nervous system. SUMMARY

[0007] In view of the above problems existing in the prior art, the present application provides a preparation method of a reconfigurable memristor based on a nanopore structure, which introduces a solution spin coating method to prepare a polymer thin film layer with a nanopore structure, which provides a fast channel for ion migration; and by changing the thickness of the small molecule resistance change layer film prepared by vacuum evaporation technology, the reconfigurable memristor can finally realize the conversion between resistance change memory and dynamic memristor, so that the reconfigurable memristor can simultaneously have the advantages of high-efficiency information storage of resistance change memory and the advantages of simulating the nonlinear integration function of dendrites of dynamic memristor.

[0008] In order to achieve the above purpose, the present application is realized by the following technical scheme:

[0009] The present application is a preparation method of a reconfigurable memristor based on a nanopore structure, which prepares a nanopore polymer thin film layer on a bottom electrode, prepares a small molecule resistance change layer on the nanopore polymer thin film layer, and finally prepares a top electrode on the small molecule resistance change layer, which specifically comprises the following steps:

[0010] Step 1, configure a low dielectric constant material polymer solution, pretreat the polymer solution, and obtain a completely dispersed and uniform polymer solution;

[0011] Step 2, substrate pretreatment: select a substrate, clean the substrate and dry it, and then use ultraviolet ozone treatment on the dried substrate;

[0012] Step 3, spin coating on the substrate treated in step 2 by using a solution spin coating method, the spin coating instrument rotates at a high speed of 6000 revolutions per minute for 30 seconds,

[0013] Step 4, the sample coated in step 3 is subjected to low-temperature annealing treatment in a vacuum drying box to obtain a nanopore polymer film layer with a nanopore structure;

[0014] Step 5, the substrate coated with the nanopore polymer film layer is placed in a film plating chamber of a vacuum evaporation film plating system, and a quartz crystal oscillator is used to control the thickness of the nanopore polymer film layer; after vacuum evaporation is completed, the nanopore polymer film layer is cooled to room temperature to obtain a small molecule resistance change layer film;

[0015] Step 6, the substrate in step 5 is taken out, and after the vacuum degree in the chamber is lower than 4.5*10 -4 pa, evaporation of the top electrode is started, and due to the self-templating effect of the nanopore, the top electrode has a nanopore structure;

[0016] Step 7, after the evaporation of the top electrode in step 6 is completed, the top electrode in step 6 is cooled to room temperature in an environment with a vacuum degree lower than 4.5*10 -4 pa, and then taken out, to obtain a nanopore structure-based reconfigurable memristor single device.

[0017] Further improvement of the application is that in step 4, the nanopore diameter of the nanopore polymer film layer is 400-800 nm, and the size of the nanopore diameter is controlled by a solution spin coating method.

[0018] Further improvement of the application is that in step 5, the thickness of the small molecule resistance change layer film is 20-60 nm, and different thicknesses of the small molecule resistance change layer film are controlled in the preparation of the reconfigurable memristor to realize the conversion of the reconfigurable memristor between a resistance change memory and a dynamic memristor, so that the reconfigurable memristor exhibits different electrical characteristics and dynamic characteristics.

[0019] Further improvement of the application is that in step 4, the low-temperature annealing temperature is 80 DEG C, and the annealing time is 30 minutes.

[0020] Further improvement of the application is that in step 5, the vacuum degree is controlled to be 4*10 -4 pa-6*10 -4 pa, and the evaporation rate is 0.3-0.4 angstrom / s.

[0021] Further improvement of the application is that in step 6, the evaporation of the top electrode is realized by evaporating metal and using a strip-shaped mask, the vacuum degree is controlled to be 4*10 -4 pa-6*10 -4 pa, the evaporation rate is 1.5-1.6 angstrom / s, and the thickness of the top electrode is controlled to be 60-80 nm by using a quartz crystal oscillator.

[0022] Further improvement of the application is that in step 5, the small molecule resistance change layer material is one of porphyrin, zinc porphyrin, copper porphyrin and iron porphyrin.

[0023] The application provides a reconfigurable memristor based on a nanopore structure, which comprises, from bottom to top, a substrate, a bottom electrode, a nanopore polymer thin film layer, a small-molecule resistance change layer, a top electrode, and a nanopore structure polymer thin film layer arranged between the bottom electrode and the small-molecule resistance change layer.

[0024] The application further improves that the polymer solution in step 1 is dissolved in a low-boiling-point solvent, and the concentration is 4-10 mg / ml, and the low-boiling-point solvent is chloroform.

[0025] The application further improves that the substrate pretreatment in step 2 specifically comprises:

[0026] Step 2.1, a suitable substrate material is selected, and acetone, anhydrous ethanol and deionized water are used in an ultrasonic cleaning machine for 10 minutes, respectively, in sequence; after the deionized water cleaning is completed, high-purity nitrogen gas is used to remove water on the surface of the substrate, and finally the substrate is placed in an electric heating air drying oven for drying at 120 DEG C for 20 minutes.

[0027] Step 2.1, the indium tin oxide bottom electrode dried in step 2.1 is subjected to ultraviolet ozone treatment for 10 minutes to complete the pretreatment of the substrate.

[0028] The application further improves that the material of the nanopore polymer thin film layer in step 4 is polyvinylcarbazole, poly (2-vinylnaphthalene) (Poly (2-vinylna phthalene)), poly (methyl methacrylate) (Poly (methylmethacrylate)) or polystyrene (Polystyrene), which is used as an ion transmission layer, and the thickness of the nanopore polymer thin film layer is 40-60 nm.

[0029] The application further improves that the material of the top electrode is aluminum, copper, silver, gold or titanium, which is used for inputting an external power signal.

[0030] The application further improves that the material of the substrate is a glass sheet or a highly doped silicon sheet, which is used for being connected to the ground.

[0031] The application has the following beneficial effects:

[0032] The reconfigurable memristor of the application uses the nanopore polymer thin film layer prepared by a solution spin coating method to provide a fast channel for the migration of ions in the device, can effectively reduce the switching voltage and current of the memristor and improve the stability of the memristor, has stable multi-level switching characteristics in multiple voltage ranges, and has better performance than the memristor with a micro-nano structure in the prior art.

[0033] The reconfigurable memristor of the application can realize the conversion between the reconfigurable memristor and the resistive random access memory and the dynamic memristor through the same device structure, so that the reconfigurable memristor exhibits different electrical characteristics and dynamic characteristics, thereby being capable of simultaneously meeting the requirements of the resistive random access memory and the dynamic memristor, and providing a method for simplifying the design of a circuit realizing the synergy of neurons and synapses.

[0034] In the device preparation process, the low-temperature annealing process is naturally combined, without additional processing and steps, so that the stability of the organic memristor device is improved, and the device can work in a room temperature environment. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 is a device structure schematic diagram of the reconfigurable memristor based on the nanopore structure of the application.

[0036] Figure 2 is an AFM topography diagram of the zinc porphyrin film with the nanopore structure and different thicknesses prepared by the vacuum evaporation film plating technology of the application.

[0037] Figure 3 is an AFM topography diagram of the copper porphyrin film with the nanopore structure and a thickness of 60 nm prepared by the vacuum evaporation film plating technology of the application.

[0038] Figure 4 is a typical current-voltage curve of the resistive random access memory when the thickness of the zinc porphyrin film is 20 nm.

[0039] Figure 5 is a Set voltage distribution diagram of 100 current-voltage curves of the resistive random access memory when the thickness of the zinc porphyrin film is 20 nm.

[0040] Figure 6 is the retention characteristic of 1000 s under different limiting currents of the resistive random access memory when the thickness of the zinc porphyrin film is 20 nm.

[0041] Figure 7 is a 50-cycle continuous current-voltage curve of the dynamic memristor when the thickness of the zinc porphyrin film is 60 nm and a voltage of 0 V-10 V-0 V is applied.

[0042] Figure 8 is a dynamic characteristic test curve of the dynamic memristor when the thickness of the zinc porphyrin film is 60 nm and different pulse amplitudes are applied.

[0043] Figure 9 is a relaxation characteristic curve of the dynamic memristor when the thickness of the zinc porphyrin film is 60 nm and different pulse numbers are applied.

[0044] Wherein: 4 - bottom electrode; 3 - nanopore polymer film layer; 2 - small molecule resistance layer; 1 - top electrode. DETAILED DESCRIPTION

[0045] The embodiments of the present application will be described below with reference to drawings. Many practical details will be described in the following description in order to provide a thorough understanding of the present application. However, it should be understood that these practical details are not intended to limit the present application. That is, these practical details are not necessary in some embodiments of the present application.

[0046] As shown in Figure 1 The present application provides a reconfigurable memristor based on a nanopore structure, which comprises, from bottom to top, a substrate, a bottom electrode, a nanopore polymer film layer, a small molecule resistance layer, and a top electrode. The nanopore polymer film layer is arranged between the small molecule resistance layer and the top electrode, and the small molecule resistance layer and the top electrode both exhibit a periodic growth of nanopore micro-nano structure morphology by self-templating of the nanopore polymer film layer. EMBODIMENT

[0047] A reconfigurable memristor with a nanopore structure is designed and prepared by using a layer-by-layer stacking method with zinc porphyrin as a small molecule resistance layer.

[0048] In actual preparation, the laboratory room temperature is kept at about 20°C, and the indoor humidity is kept below 30%.

[0049] Specifically, the preparation method of the reconfigurable memristor based on the nanopore structure specifically comprises the following steps:

[0050] Step 1, configure a polyvinyl carbazole solution with a molecular weight Mw = 90000, use a low-boiling-point solvent chloroform as a solvent, and the solution concentration is 5 mg / ml. The prepared solution is placed at room temperature and atmospheric pressure for one night, and the impurities in the solution are screened out by filtration to obtain a completely dispersed and uniform polyvinyl carbazole solution;

[0051] Step 2, substrate pretreatment, specifically comprising the following steps:

[0052] Step 2.1. First, clean the bottom electrode indium tin oxide and the glass substrate, and use acetone, anhydrous ethanol, and deionized water in sequence for 10 minutes of cleaning in a 90KHz ultrasonic cleaning machine.

[0053] Step 2.2. Use a high-purity nitrogen gun to blow off the moisture on the surface of the substrate, and place it in an electric heating air drying oven preheated to 120°C for 30 minutes of drying;

[0054] Step 2.3. Place the dried substrate in a UV ozone machine for 10 minutes of UV ozone treatment.

[0055] Step 3, using the prepared polyvinylcarbazole solution, the substrate after step 2 is treated by solution spin coating method in a humid environment with humidity of 80-85%, the spin coater speed is 6000 rpm for 30 seconds, the nano-porous polyvinylcarbazole film thickness is controlled at about 45 nm, and the film thickness is determined by a step meter;

[0056] Step 4, the nano-porous polyvinylcarbazole film after step 3 is annealed at low temperature in a vacuum drying oven to obtain a nano-porous polymer film layer with nano-porous structure; the low temperature annealing temperature is 80°C, and the annealing time is 30 minutes.

[0057] Step 5, the substrate coated with nano-porous polyvinylcarbazole film is placed in the film plating chamber of the vacuum evaporation film plating system, the vacuum degree is controlled at 4×10 -4 pa~6×10 -4 pa, the evaporation rate is 0.3-0.4 Å / s, and the quartz crystal oscillator is used to control the film thickness at 20-60 nm; after the evaporation is completed, the film is annealed and cooled to room temperature to obtain a zinc porphyrin film with different thicknesses; the thickness of the obtained zinc porphyrin film is determined by a step meter;

[0058] Step 6, the substrate in step 5 is taken out of the film plating chamber of the vacuum evaporation film plating system, and after the vacuum degree in the chamber is lower than 4.5×10 -4 pa, the top electrode is evaporated, the top electrode material is aluminum, the evaporation rate is 1.5-1.6 Å / s, and by evaporating metal and using a mask, a nano-porous metal aluminum layer with a thickness of about 70 nm is obtained, and the film thickness is measured by a step meter; due to the self-templating effect of the nano-pores, the top electrode has a nano-porous structure.

[0059] Step 7, after the top electrode in step 6 is evaporated, the top electrode in step 6 is cooled to room temperature in an environment with a vacuum degree lower than 4.5×10 -4 pa, and is taken out, thereby obtaining a nano-porous structure-based reconfigurable memristor single device.

[0060] The nano-porous structure-based reconfigurable memristor prepared in this embodiment is as shown in FIG. 1, which is a full view of the device prepared by using a cross-stacking structure. The structure from bottom to top is a bottom electrode, a nano-porous polymer film layer, a small molecule resistance change layer, and a metal top electrode. Figure 1

[0061] Figure 2 a and Figure 2 ​b is an atomic force microscope (AFM) topography of a 20 nm thick nanoporous structured zinc porphyrin thin film prepared by vacuum evaporation technique, the roughness Rq=3.58 nm, the average pore size of the thin film nanopores is about 600-800 nm.

[0062] Figure 2 c and Figure 2 d is also an atomic force microscope (AFM) topography of a 60 nm thick nanoporous structured zinc porphyrin thin film prepared by vacuum evaporation technique, the root mean square roughness Rq=6.30 nm, the average pore size of the thin film nanopores is about 400-600 nm.

[0063] It can be seen that due to the characteristic of conformal growth of the thin film in vacuum evaporation, the zinc porphyrin thin film on the nanoporous structured polyvinylcarbazole thin film still has the nanoporous thin film morphology.

[0064] The reconfigurable memristor based on nanoporous structure has the following related performance tests:

[0065] Figure 4 The typical current-voltage characteristic curve of the resistance change memory based on a 20 nm thick zinc porphyrin thin film under the test conditions of a step voltage of 0.05 V and a limit current of 200 μA, a positive voltage of 4 V and a negative voltage of -4 V, it can be seen from the figure that the device is a resistance change memory, the current level is suddenly increased or decreased, and the current-voltage curve is stable, the curve has obvious Set and Reset processes, and the on-off ratio is greater than 10 2 .

[0066] Figure 5 The distribution of the Set voltage in the current-voltage characteristic curve of the resistance change memory based on a 20 nm thick zinc porphyrin thin film under the test conditions of a step voltage of 0.05 V and a limit current of 200 μA, a positive voltage of 4 V and a negative voltage of -4 V for 100 consecutive times, the inset is a histogram of the distribution of the Set voltage, it can be seen from the figure that the Set voltage is concentrated in 1-1.5 V in 100 consecutive cycles, which indicates that the resistance change memory has stable switching characteristics.

[0067] Figure 6 The retention characteristics of the resistance change memory based on a 20 nm thick zinc porphyrin thin film under different limit currents for 1000 s, the read pulse is 1 V, 100 ms, the lowermost row represents the high resistance state (HRS), as Figure 6 shown, there are at least 8 conductance levels that can be maintained stably.

[0068] Figure 7The current-voltage characteristic curve of the dynamic memristor based on the 60 nm thick porphyrin zinc film under 50 continuous 0V~ -10V~ 0V negative voltage scanning, the device under the test condition of 0.05 V step voltage, the current size increases with the increase of scanning times, and the current-voltage curve is stable. The dynamic current switching ratio is about 4600 times, which is much higher than the current switching ratio of the current dynamic memristor.

[0069] Figure 8 The dynamic characteristic test curve of the dynamic memristor based on the 60 nm thick porphyrin zinc film under different pulse amplitudes, the input pulse is -8V, -9V, -10V, -11V, -12V, 500ms, the read pulse is -2V, 2000ms, and the inset is the relaxation curve corresponding to different pulse amplitudes. As shown in Figure 8 , the relaxation changes corresponding to different amplitudes of pulses are different, which highlights the fine regulation ability of the dynamic memristor to different amplitude pulse currents.

[0070] Figure 9 The relaxation characteristic curve of the dynamic memristor based on the 60 nm thick porphyrin zinc film under different number of voltage pulses, the input pulse is -12V, 200ms, the read pulse is -2V, 50ms, and the inset is the t1 value fitting curve corresponding to different curves. As shown in Figure 9 , the relaxation changes under different number of continuous pulses and different stimulation accumulation are different, and the adjustability of the relaxation time under different pulse conditions greatly enriches the complexity of the dynamic memristor to realize the reserve pool calculation application. Embodiment

[0071] The preparation process of the nanopore structure reconfigurable memristor with porphyrin copper as a small molecule resistance variable layer is the same as that of Example One except that the material selected in the vacuum evaporation film preparation system is different. The thickness of the nanopore porphyrin copper film is controlled at about 60 nm, and the film thickness is determined by a step meter.

[0072] Figure 3 a and Figure 3 b are the atomic force microscope (AFM) topographic maps of the 60 nm thick nanopore structure porphyrin copper film prepared by the vacuum evaporation technology in the embodiment, the roughness Rq=7.13 nm, and the average pore size of the film nanopore is about 500-700 nm;

[0073] The AFM characterization analysis of the porphyrin copper prepared in Example Two after setting the material of the vacuum evaporation film preparation system as porphyrin copper is shown in Figure 3 , and Figure 2Compared with the zinc porphyrin thin film prepared by vacuum evaporation thin film preparation system, the thin film still has nanopores and the pore size is only increased by about 100 nm, which is almost the same as the result of AFM characterization analysis of zinc porphyrin, so the self-templating effect of the nanoporous polymer thin film layer of the small molecule resistance change layer can stably present the periodically growing nanoporous micro-nano structure morphology, proving the controllability of the device thin film nanopores.

[0074] The above is only the preferred embodiment of the present application, and does not limit the present application in any way. Any person skilled in the art, without departing from the scope of the technical solutions of the present application, makes any form of equivalent replacement or modification of the technical solutions and technical contents disclosed by the present application, etc., which belongs to the content of the technical solutions of the present application, and still belongs to the protection scope of the present application.

Claims

1. A method for fabricating a reconfigurable memristor based on a nanoporous structure, comprising fabricating a nanoporous polymer thin film layer on a bottom electrode, fabricating a small molecule resistive switching layer on the nanoporous polymer thin film layer, and finally fabricating a top electrode on the small molecule resistive switching layer, characterized in that: The method for fabricating the reconfigurable memristor specifically includes the following steps: Step 1: Prepare a polymer solution of a low dielectric constant material, and pretreat the polymer solution to obtain a completely and uniformly dispersed polymer solution; Step 2, Substrate Pretreatment: Select a substrate, clean it thoroughly, and then dry it. Treat the dried substrate with ultraviolet ozone. Step 3: Apply the polymer solution to the substrate after Step 2 using a spin coater at a high speed of 6000 rpm for 30 seconds. Step 4: The spin-coated sample from Step 3 is subjected to low-temperature annealing in a vacuum drying oven to obtain a nanoporous polymer film layer with a nanoporous structure. The low-temperature annealing temperature is 80℃ and the annealing time is 30 minutes. Step 5: Place the substrate coated with the nanoporous polymer film layer into the coating chamber of the vacuum evaporation coating system, and use a quartz crystal oscillator to control the thickness of the nanoporous polymer film layer; after the vacuum evaporation is completed, cool it to room temperature to obtain a small molecule resistive switching layer film. Step 6: Remove the substrate from Step 5 and wait for the vacuum level inside the cavity to drop below 4.5 × 10⁻⁶. -4 After Pa, the top electrode is deposited by vapor deposition. Due to the self-templating effect of the nanopores, the top electrode has a nanopore structure. After the top electrode is deposited in steps 7 and 6, place the top electrode from step 6 under a vacuum of less than 4.5 × 10⁻⁶. -4 By cooling the device to room temperature in a pa environment and removing it, a single reconfigurable memristor device based on a nanoporous structure can be obtained.

2. The method for fabricating a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 4, the pore size of the nanoporous polymer film layer is 400-800 nm, and the pore size is controlled by solution spin coating.

3. The method for fabricating a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 5, the thickness of the small molecule resistive switching layer film is 20-60 nm. By controlling the thickness of different small molecule resistive switching layer films during the fabrication of the reconfigurable memristor, the reconfigurable memristor can be switched between resistive switching memory and dynamic memristor, so that the reconfigurable memristor exhibits different electrical and dynamic characteristics.

4. The method for fabricating a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 5, the vacuum level is controlled at 4×10⁻⁶. -4 pa~6×10 -4 The evaporation rate is 0.3–0.4 Å / s.

5. The method for fabricating a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 6, the top electrode is deposited by evaporating metal and using a strip patterned mask, with the vacuum level controlled at 4 × 10⁻⁶. -4 pa~6×10 -4 The evaporation rate is 1.5–1.6 Å / s, and the thickness of the top electrode is controlled by a quartz crystal oscillator to be 60–80 nm.

6. The method for fabricating a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: In step 5, the small molecule resistive switching layer material is one of porphyrin, zinc porphyrin, copper porphyrin, or iron porphyrin.

7. The method for fabricating a reconfigurable memristor based on a nanopore structure according to claim 1, characterized in that: The reconfigurable memristor based on the nanoporous structure obtained by the fabrication method of the reconfigurable memristor includes, from bottom to top, a substrate and a bottom electrode, a nanoporous polymer film layer, a small molecule resistive switching layer, and a top electrode formed on the substrate. A nanoporous polymer film layer is provided between the bottom electrode and the small molecule resistive switching layer. The small molecule resistive switching layer and the top electrode both exhibit a periodically grown nanoporous micro / nano structure morphology by utilizing the self-templating effect of the nanoporous polymer film layer.

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